CN109427879A - 包括2d材料的装置 - Google Patents
包括2d材料的装置 Download PDFInfo
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- CN109427879A CN109427879A CN201811024895.7A CN201811024895A CN109427879A CN 109427879 A CN109427879 A CN 109427879A CN 201811024895 A CN201811024895 A CN 201811024895A CN 109427879 A CN109427879 A CN 109427879A
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- 239000000758 substrate Substances 0.000 claims abstract description 141
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- 150000003624 transition metals Chemical class 0.000 claims description 12
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- 238000009413 insulation Methods 0.000 claims description 6
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- 238000000034 method Methods 0.000 description 20
- QXYJCZRRLLQGCR-UHFFFAOYSA-N dioxomolybdenum Chemical compound O=[Mo]=O QXYJCZRRLLQGCR-UHFFFAOYSA-N 0.000 description 18
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- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 description 4
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- JKQOBWVOAYFWKG-UHFFFAOYSA-N molybdenum trioxide Inorganic materials O=[Mo](=O)=O JKQOBWVOAYFWKG-UHFFFAOYSA-N 0.000 description 2
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- 229910005540 GaP Inorganic materials 0.000 description 1
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- GPXJNWSHGFTCBW-UHFFFAOYSA-N Indium phosphide Chemical compound [In]#P GPXJNWSHGFTCBW-UHFFFAOYSA-N 0.000 description 1
- 229910017299 Mo—O Inorganic materials 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
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- 229910000449 hafnium oxide Inorganic materials 0.000 description 1
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- 229910000484 niobium oxide Inorganic materials 0.000 description 1
- URLJKFSTXLNXLG-UHFFFAOYSA-N niobium(5+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Nb+5].[Nb+5] URLJKFSTXLNXLG-UHFFFAOYSA-N 0.000 description 1
- QGLKJKCYBOYXKC-UHFFFAOYSA-N nonaoxidotritungsten Chemical compound O=[W]1(=O)O[W](=O)(=O)O[W](=O)(=O)O1 QGLKJKCYBOYXKC-UHFFFAOYSA-N 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- PQQKPALAQIIWST-UHFFFAOYSA-N oxomolybdenum Chemical compound [Mo]=O PQQKPALAQIIWST-UHFFFAOYSA-N 0.000 description 1
- GNRSAWUEBMWBQH-UHFFFAOYSA-N oxonickel Chemical compound [Ni]=O GNRSAWUEBMWBQH-UHFFFAOYSA-N 0.000 description 1
- HBEQXAKJSGXAIQ-UHFFFAOYSA-N oxopalladium Chemical compound [Pd]=O HBEQXAKJSGXAIQ-UHFFFAOYSA-N 0.000 description 1
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- BPUBBGLMJRNUCC-UHFFFAOYSA-N oxygen(2-);tantalum(5+) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Ta+5].[Ta+5] BPUBBGLMJRNUCC-UHFFFAOYSA-N 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 229910003445 palladium oxide Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
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- 229910003446 platinum oxide Inorganic materials 0.000 description 1
- 229910052711 selenium Inorganic materials 0.000 description 1
- 239000007790 solid phase Substances 0.000 description 1
- 238000000859 sublimation Methods 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
- 229910001936 tantalum oxide Inorganic materials 0.000 description 1
- IOWOAQVVLHHFTL-UHFFFAOYSA-N technetium(vii) oxide Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[O-2].[Tc+7].[Tc+7] IOWOAQVVLHHFTL-UHFFFAOYSA-N 0.000 description 1
- 229910052714 tellurium Inorganic materials 0.000 description 1
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- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 230000007704 transition Effects 0.000 description 1
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- 229910001930 tungsten oxide Inorganic materials 0.000 description 1
- 229910052720 vanadium Inorganic materials 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/78603—Thin film transistors, i.e. transistors with a channel being at least partly a thin film characterised by the insulating substrate or support
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/778—Field effect transistors with two-dimensional charge carrier gas channel, e.g. HEMT ; with two-dimensional charge-carrier layer formed at a heterojunction interface
- H01L29/7788—Vertical transistors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
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- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/28008—Making conductor-insulator-semiconductor electrodes
- H01L21/28017—Making conductor-insulator-semiconductor electrodes the insulator being formed after the semiconductor body, the semiconductor being silicon
- H01L21/28158—Making the insulator
- H01L21/28167—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation
- H01L21/28185—Making the insulator on single crystalline silicon, e.g. using a liquid, i.e. chemical oxidation with a treatment, e.g. annealing, after the formation of the gate insulator and before the formation of the definitive gate conductor
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/285—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation
- H01L21/28506—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers
- H01L21/28512—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table
- H01L21/28568—Deposition of conductive or insulating materials for electrodes conducting electric current from a gas or vapour, e.g. condensation of conductive layers on semiconductor bodies comprising elements of Group IV of the Periodic Table the conductive layers comprising transition metals
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0657—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body
- H01L29/0665—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by the shape of the body the shape of the body defining a nanostructure
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/16—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only elements of Group IV of the Periodic Table
- H01L29/1606—Graphene
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
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Abstract
提供了包括二维材料的装置,所述装置包括:基底;第一电极,位于基底上;绝缘图案,位于基底上;第二电极,位于绝缘图案的上端上;二维(2D)材料层,位于绝缘图案的侧表面上;栅极绝缘层,覆盖2D材料层;以及栅电极,接触栅极绝缘层。绝缘图案在与基底基本垂直的方向上从第一电极延伸。2D材料层包括与绝缘图案的侧表面基本平行的至少一个原子层的2D材料。
Description
本申请要求于2017年9月4日在韩国知识产权局提交的第10-2017-0112493号韩国专利申请的权益,该韩国专利申请的公开内容通过引用而全部包含于此。
技术领域
发明构思涉及包括二维(2D)材料的装置,更具体地,涉及垂直晶体管装置、鳍式晶体管装置、隧穿装置和包括2D材料的掩埋晶体管装置。
背景技术
自石墨烯从石墨分离成功以来,已经对包括石墨烯、六方氮化硼(h-BN)和过渡金属二硫属化物(TMDC)的2D材料进行了大量研究。2D材料可以形成为仅具有单个原子层或几个原子层。2D材料具有几纳米或更小的小厚度,并且可以具有比具有3D晶体结构的现有材料好的电学、光学、热学和化学特性,因此,2D材料作为用于电子装置和光学装置的新材料已经引起关注。
发明内容
发明构思提供一种包括二维(2D)材料的装置。
根据发明构思的一方面,一种装置包括:基底;第一电极,位于基底上;绝缘图案,位于基底上;第二电极,位于绝缘图案的上端上;2D材料层,沿着绝缘图案的侧表面;栅极绝缘层,覆盖2D材料层;以及栅电极,接触栅极绝缘层。绝缘图案可以在与基底基本垂直的方向上从第一电极延伸。2D材料层可以包括与绝缘图案的侧表面基本平行的至少一个原子层的2D材料。
根据发明构思的另一方面,一种装置包括:基底;沟道结构,位于基底上;第一电极和第二电极,位于基底上;栅电极,位于基底上;以及栅极绝缘层,位于沟道结构与栅电极之间。沟道结构可以在与基底平行的第一方向上延伸。第一电极和第二电极分别可以位于沟道结构的两端处。栅电极可以在与基底平行的第二方向上延伸,并且栅电极可以与沟道结构相交。沟道结构可以包括绝缘图案和位于绝缘图案的表面上的2D材料层。2D材料层可以包括与绝缘图案的表面平行的至少一个原子层的2D材料。
根据发明构思的另一方面,一种装置包括:基底;绝缘图案,位于基底上;一对2D材料层,位于绝缘图案的侧表面上,第一电极;以及第二电极。所述一对2D材料层中的每个可以包括可以与绝缘图案的侧表面平行的至少一个原子层的2D材料。所述一对2D材料层可以包括通过在其间插入绝缘图案而在可以与基底平行的第一方向上彼此间隔开的第一2D材料层和第二2D材料层。第一电极可以接触第一2D材料层。第二电极可以接触第二2D材料层。
根据发明构思的另一方面,一种装置包括:基底,包括凹部;2D材料图案,位于基底上;栅极结构,接触2D材料图案,第一电极,接触2D材料图案的第一端;以及第二电极,接触2D材料图案的第二端。凹部可以从基底的主表面凹陷并可以在第一方向上延伸。2D材料图案可以与基底的凹部相交并可以在第二方向上延伸。栅极结构可以接触2D材料图案并可以沿着基底的凹部在第一方向上延伸。第一电极可以接触2D材料图案的第一端。第二电极可以接触2D材料图案的第二端。2D材料图案可以包括与基底的表面平行的原子层。
根据发明构思的另一方面,一种装置包括:基底,包括凹部;2D材料图案,位于基底上;栅极结构,与2D材料图案相交;第一电极,接触2D材料图案的第一端;以及第二电极,接触二维材料图案的第二端。凹部可以从基底的主表面凹陷并可以在第一方向上延伸。2D材料图案可以沿着基底的凹部在第一方向上延伸。栅极结构可以与2D材料图案相交并且可以在第二方向上延伸。第一电极可以接触2D材料图案的第一端。第二电极可以接触2D材料图案的第二端。2D材料图案可以包括第一部分和第二部分。第一部分可以位于基底的凹部的下表面上,第二部分可以位于基底的凹部的侧表面上。
根据发明构思的另一方面,一种装置可以包括:基底,包括从基底的主表面突出并在第一方向上延伸的鳍;2D材料图案,位于基底上,并沿着鳍在第一方向上延伸;栅极结构,与2D材料图案相交并在第二方向上延伸;第一电极,接触2D材料图案的第一端;以及第二电极,接触2D材料图案的第二端。2D材料图案可以包括位于基底的鳍的上表面上的第一部分以及位于基底的鳍的侧表面上的第二部分。
附图说明
通过下面结合附图的详细描述,将更清楚地理解发明构思的实施例,在附图中:
图1A和图1B是根据发明构思的实施例的包括二维(2D)材料的装置的剖视图,图1B是沿着图1A的线AA'截取的剖视图;
图2A和图2B是根据发明构思的实施例的包括2D材料的装置的剖视图,图2B是沿着图2A的线AA'截取的剖视图;
图3A和图3B是根据发明构思的实施例的包括2D材料的装置的剖视图,图3B是沿着图3A的线AA'截取的剖视图;
图4A和图4B是根据发明构思的实施例的包括2D材料的装置的剖视图,图4B是沿着图4A的线AA'截取的剖视图;
图5A是根据发明构思的实施例的包括2D材料的装置的透视图;
图5B是沿着图5A的线AA'截取的剖视图;
图6A是根据发明构思的实施例的包括2D材料的装置的透视图;
图6B是沿着图6A的线AA'截取的剖视图;
图7A和图7B是根据发明构思的实施例的包括2D材料的装置的剖视图,图7B是沿着图7A的线AA'截取的剖视图;
图8A是根据发明构思的实施例的包括2D材料的装置的俯视图;
图8B是沿着图8A的线AA'截取的剖视图;
图8C是沿着图8A的线BB'截取的剖视图;
图9A是根据发明构思的实施例的包括2D材料的装置的俯视图;
图9B是沿着图9A的线AA'截取的剖视图;
图9C是沿着图9A的线BB'截取的剖视图;
图10A是根据发明构思的实施例的包括2D材料的装置的俯视图;
图10B是沿着图10A的线AA'截取的剖视图;
图10C是沿着图10A的线BB'截取的剖视图;
图11A至图11H是根据发明构思的实施例的用于描述制造包括2D材料的装置的方法的剖视图;
图12A至图12E是根据发明构思的实施例的用于描述制造包括2D材料的装置的方法的剖视图;
图13A至图13F是根据发明构思的实施例的用于描述制造包括2D材料的装置的方法的剖视图;
图14A至图14D是根据发明构思的实施例的用于描述制造包括2D材料的装置的方法的剖视图;
图15A至图15E是根据发明构思的实施例的用于描述制造包括2D材料的装置的方法的剖视图;
图16A至图16E是根据发明构思的实施例的用于描述制造包括2D材料的装置的方法的剖视图。
具体实施方式
图1A和图1B是根据发明构思的实施例的包括二维(2D)材料的装置100的剖视图,图1B是沿着图1A的线AA'截取的剖视图。
参照图1A,根据发明构思的实施例的包括2D材料的装置100可以包括基底110、第一电极120、第二电极140、绝缘图案130、2D材料层150、栅极绝缘层160和栅电极170。装置100可以是垂直晶体管。
基底110可以包括半导体材料、玻璃或塑料。半导体材料可以包括IV族半导体材料、III-V族半导体材料或II-VI族半导体材料。IV族半导体材料可以包括例如硅(Si)、锗(Ge)或Si-Ge。III-V族半导体材料可以包括例如砷化镓(GaAs)、磷化铟(InP)、GaP、InAs、锑化铟(InSb)或InGaAs。II-VI族半导体材料可以包括例如碲化锌(ZnTe)或硫化镉(CdS)。包括半导体材料的基底110可以是体晶圆或外延层。
第一电极120可以位于基底110上。第二电极140可以位于绝缘图案130的上端处。第一电极120和第二电极140可以独立地包括金属、金属氮化物或其组合。金属可以包括例如钨(W)、铜(Cu)、金(Au)、银(Ag)、钛(Ti)、钽(Ta)、钌(Ru)或钴(Co)。金属氮化物可以包括例如氮化钛(TiN)、TaN、CoN或WN。根据一些实施例,第一电极120的与基底110平行的剖面的面积可以不同于第二电极140的与基底110平行的剖面的面积。
根据一些实施例,第一层间绝缘层125可以覆盖第一电极120的侧壁。第一电极120可以穿透第一层间绝缘层125。第一层间绝缘层125可以包括从例如氧化硅、氮化硅和氮氧化硅中选择的绝缘材料,或者可以包括诸如以氧化硅、氮化硅和氮氧化硅为例的绝缘材料。
根据一些实施例,与第一层间绝缘层125类似,第三层间绝缘层145(见图2A)可以位于第二电极140周围。第二电极140可以穿透第三层间绝缘层145(见图2A)。第三层间绝缘层145(见图2A)可以包括从例如氧化硅、氮化硅和氮氧化硅中选择的绝缘材料,或者可以包括诸如以氧化硅、氮化硅和氮氧化硅为例的绝缘材料。
绝缘图案130可以在与基底110垂直的方向上从第一电极120延伸到第二电极140。尽管图1B示出了绝缘图案130的与基底110平行的剖面是矩形,但是绝缘图案130的剖面的形状不限于此。绝缘图案130可以包括绝缘材料,所述绝缘材料可以通过与另一种化学材料反应来形成2D材料。根据一些实施例,绝缘图案130可以包括金属氧化物,具体地,可以包括过渡金属氧化物。绝缘图案130可以包括例如氧化钨、氧化铜、氧化镍、氧化钼、氧化钛、氧化钒、氧化锆、氧化铪、氧化钯、氧化铂、氧化铌、氧化钽、氧化锝或氧化铼。根据一些实施例,绝缘图案130可以包括从二氧化钼(MoO2)、二氧化钨(WO2)等中选择的过渡金属二氧化物,或者可以包括诸如二氧化钼(MoO2)、二氧化钨(WO2)等的过渡金属二氧化物。
2D材料层150可以位于绝缘图案130的侧壁上。2D材料层150可以围绕绝缘图案130的整个侧壁。即,2D材料层150可以形成在形成绝缘图案130的侧壁的所有四个侧表面上。2D材料层150可以沿着绝缘图案130的侧壁在与基底110基本垂直的方向上从第一电极120延伸到第二电极140。2D材料层150可以包括从石墨烯、六方氮化硼(h-BN)、过渡金属二硫化物(TMDC)等中选择的2D材料,或者可以包括诸如石墨烯、六方氮化硼(h-BN)、过渡金属二硫化物(TMDC)等的2D材料。TMDC具有MX2的化学式,其中,M表示从钼(Mo)、W、镍(Ni)、Ti、钒(V)、锆(Zr)、铪(Hf)、钯(Pd)、铂(Pt)、铌(Nb)、Ta、锝(Tc)、铼(Re)等中选择的过渡金属,或者诸如钼(Mo)、W、镍(Ni)、Ti、钒(V)、锆(Zr)、铪(Hf)、钯(Pd)、铂(Pt)、铌(Nb)、Ta、锝(Tc)、铼(Re)等的过渡金属,X表示从硫(S)、硒(Se)、碲(Te)等中选择的硫族元素。2D材料层150可以通过绝缘图案130与化学材料之间的反应来形成。根据一些实施例,2D材料层150和绝缘图案130可以包括相同的过渡金属元素。例如,2D材料层150可以包括二硫化钼(MoS2),绝缘图案130可以包括MoO2。此外,2D材料层150可以掺杂为n型或p型。
2D材料层150可以包括至少一个原子层的2D材料。根据一些实施例,2D材料层150可以包括一个或数十个原子层(例如,在1至90、1至30、1至10和/或1-3个原子层的范围内)。当2D材料层150具有多个原子层时,多个原子层可以彼此平行。形成2D材料层150的每个原子层可以平行于绝缘图案130的侧壁。绝缘图案130的侧壁可以基本垂直于基底110,并且2D材料的原子层可以基本垂直于基底110。
2D材料层150可以是半导体。2D材料层150的带隙能量可以根据形成2D材料层150的原子层的数量而变化。形成2D材料层150的原子层的数量的增大可以引起2D材料层150的带隙能量的减小。即,2D材料层150的厚度的增大可以引起2D材料层150的带隙能量的减小。形成绝缘图案130的材料的带隙能量可以比2D材料层150的带隙能量大。例如,形成绝缘图案130的MoO2的带隙能量可以是大约3.9eV或更高,包括一个原子层的MoS2的2D材料层150的带隙能量可以是大约2.1eV或更低,其低于形成绝缘图案130的MoO2的带隙能量。随着形成2D材料层150的原子层的数量的增大,可以进一步减小2D材料层150的带隙能量。
栅极绝缘层160可以覆盖2D材料层150。如图1B中所示,栅极绝缘层160可以围绕2D材料层150的周界。栅极绝缘层160可以与第一电极120和第二电极140接触。栅极绝缘层160可以包括从例如HfO2、ZrO2、氧化镧(LaO3)、Ta2O5、TiO2、氧化钇(Y2O3)和氧化铝(Al2O3)中选择的绝缘材料,或者可以包括诸如以HfO2、ZrO2、氧化镧(LaO3)、Ta2O5、TiO2、氧化钇(Y2O3)和氧化铝(Al2O3)为例的绝缘材料。
栅电极170可以位于栅极绝缘层160周围。栅电极170可以与栅极绝缘层160接触。根据发明构思的一个实施例,栅电极170可以是环栅型(all-around gate type)。即,栅电极170可以围绕栅极绝缘层160的周界。栅电极170可以包括从例如Ti、Ta、Al、W、Ru、Ni、Mo、Hf、Ni、Co、Pt和Pd中选择的金属(或者可以包括诸如以Ti、Ta、Al、W、Ru、Ni、Mo、Hf、Ni、Co、Pt和Pd为例的金属)或该金属的氮化物。
根据一些实施例,栅电极170可以通过第二层间绝缘层180与第二电极140间隔开。第二层间绝缘层180可以包括从例如氧化硅、氮化硅和氮氧化硅中选择的绝缘材料,或者可以包括诸如以氧化硅、氮化硅和氮氧化硅为例的绝缘材料。
根据一些实施例,还可以在栅电极170下方包括第四层间绝缘层(未示出)。即,还可以在栅电极170的下表面与栅极绝缘层160之间包括四层间绝缘层(未示出)。与第二层间绝缘层180类似,第四层间绝缘层(未示出)可以包括从氧化硅、氮化硅、氮氧化硅等中选择的绝缘材料,或者可以包括诸如氧化硅、氮化硅、氮氧化硅等的绝缘材料。
图2A和图2B是根据发明构思的实施例的包括2D材料的装置200的剖视图,图2B是沿着图2A的线AA'截取的剖视图。在下文中,将描述与参照图1A和图1B描述的实施例的差异。
参照图2A和图2B,根据发明构思的实施例的包括在包含2D材料的装置200中的栅电极170可以是双栅型。即,栅电极170可以包括与栅极绝缘层160的一侧接触的第一栅电极和与栅极绝缘层160的另一侧接触的第二栅电极。第一栅电极和第二栅极可以通过插入绝缘图案130、2D材料层150和栅极绝缘层160而彼此分开。
图3A和图3B是根据发明构思的实施例的包括2D材料的装置300的剖视图,图3B是沿着图3A的线AA'截取的剖视图。在下文中,将描述与参照图1A和图1B描述的实施例的差异。
参照图3A和图3B,根据发明构思的实施例的包括在包含2D材料的装置300中的栅电极170可以是单栅型。即,栅电极170可以位于栅极绝缘层160的一侧处。
图4A和图4B是根据发明构思的实施例的包括2D材料的装置400的剖视图,图4B是沿着图4A的线AA'截取的剖视图。在下文中,将描述与参照图1A和图1B描述的实施例的差异。
参照图4A和图4B,2D材料层150不仅可以位于绝缘图案130的侧壁上,还可以位于绝缘图案130的上表面上。即,2D材料层150可以位于第二电极140与绝缘图案130之间。根据一些实施例,2D材料层150的位于绝缘图案130的上表面上的部分可以比2D材料层150的位于绝缘图案130的侧壁上的部分薄。
图5A是根据发明构思的实施例的包括2D材料的装置500的透视图。图5B是沿着图5A的线AA'截取的剖视图。
根据发明构思的实施例的包括2D材料的装置500可以包括沟道结构510、第一电极120、第二电极140、栅电极170和栅极绝缘层160。装置500可以是鳍式晶体管。
沟道结构510可以在与基底110平行的第一方向X上延伸。沟道结构510可以包括绝缘图案130和2D材料层150。绝缘图案130可以在与基底110平行的第一方向X上延伸。2D材料层150可以位于绝缘图案130的表面上。2D材料层150可以包括例如位于绝缘图案130的上表面上的第一部分151以及位于绝缘图案130的侧表面上的第二部分152。形成2D材料层150的原子层可以平行于绝缘图案130的表面。例如,位于2D材料层150的第一部分151内的原子层可以平行于绝缘图案130的上表面。绝缘图案130的上表面可以基本平行于基底110,在这种情况下,位于2D材料层150的第一部分151内的原子层可以基本平行于基底110。此外,位于2D材料层150的第二部分152内的原子层可以平行于绝缘图案130的侧壁。绝缘图案130的侧壁可以基本垂直于基底110,在这种情况下,位于2D材料层150的第二部分152内的原子层可以基本垂直于基底110。
第一电极120和第二电极140可以分别位于沟道结构510的两端上。第一电极120和第二电极140可以电连接到沟道结构510的2D材料层150。
栅电极170可以在沟道结构510上方通过。栅电极170可以在与基底110平行的第二方向Y上延伸并且与沟道结构510相交。栅极绝缘层160可以位于沟道结构510与栅电极170之间。栅极绝缘层160可以与沟道结构510的侧表面和上表面接触。
基底110、绝缘图案130、2D材料层150、第一电极120、第二电极140、栅电极170和栅极绝缘层160的各个构成材料的描述与参照图1A和图1B描述的相同。
图6A是根据发明构思的实施例的包括2D材料的装置600的透视图。图6B是沿着图6的线AA'截取的剖视图。在下文中,将描述与参照图5A和图5B描述的实施例的差异。
参照图6A和图6B,根据发明构思的实施例的包括2D材料的装置600还可以包括器件隔离膜620。器件隔离膜620可以包括从氧化硅、氮化硅、氮氧化硅等中选择的绝缘材料,或者可以包括诸如氧化硅、氮化硅、氮氧化硅等的绝缘材料。
器件隔离膜620的上表面可以低于绝缘图案130的上表面。即,绝缘图案130可以从器件隔离膜620突出。器件隔离膜620可以覆盖绝缘图案130的侧壁的一部分。器件隔离膜620可以不覆盖绝缘图案130的侧壁的另一部分和绝缘图案130的上表面。2D材料层150可以位于绝缘图案130的侧壁的未被器件隔离膜620覆盖的部分和绝缘图案130的上表面上。
图7A和图7B是根据发明构思的实施例的包括2D材料的装置700的剖视图,图7B是沿着图7A的线AA'截取的剖视图。
根据发明构思的实施例的包括2D材料的装置700可以包括基底110、绝缘图案130、一对2D材料层150、第一电极120和第二电极140。装置700可以是隧穿装置。
绝缘图案130位于基底110上。一对2D材料层150位于绝缘图案130的侧壁上。一对2D材料层150通过绝缘图案130而在第一方向X上彼此间隔开。第一电极120与一对2D材料层150中的一个接触,第二电极140与一对2D材料层150中的另一个接触。即,第一电极120与第二电极140通过在其间插入绝缘图案130和一对2D材料层150而在第一方向X上彼此间隔开。
第一电极120在第二方向Y上的宽度W1可以与绝缘图案130在第二方向Y上的宽度W2基本相同。此外,第一电极120在第三方向Z上的高度H1可以与绝缘图案130在第三方向Z上的高度H2基本相同。
根据一些实施例,装置700还可以包括第一层间绝缘层125。第一层间绝缘层125可以位于基底110上。第一电极120、第二电极140和2D材料层150可以位于第一层间绝缘层125上。如图7A中所示,绝缘图案130可以位于第一层间绝缘层125上。根据一些实施例,与图7A不同,绝缘图案130可以在与基底110基本垂直的方向上从基底110延伸并且穿透第一层间绝缘层125。
根据一些实施例,装置700还可以包括第二层间绝缘层180。第二层间绝缘层180可以覆盖绝缘图案130、第一电极120和第二电极140的侧壁。
形成基底110、绝缘图案130、2D材料层150、第一电极120、第二电极140、第一层间绝缘层125和第二层间绝缘层180的材料的详细描述与参照图1A和图1B所描述的相同。
图8A是根据发明构思的实施例的包括2D材料的装置800的俯视图。图8B是沿着图8A的线AA'截取的剖视图。图8C是沿着图8A的线BB'截取的剖视图。
参照图8A、图8B和图8C,根据发明构思的实施例的包括2D材料的装置800可以包括基底110、2D材料图案850、栅极结构GS、第一电极120和第二电极140。装置800可以是掩埋晶体管。
基底110可以具有从基底110的主表面凹陷并在第一方向X上延伸的凹部110R。2D材料图案850可以在第二方向Y上延伸。2D材料图案850可以与基底110的凹部110R相交。2D材料图案850可以包括从TMDC等中选择的2D材料,或者可以包括诸如TMDC等的2D材料。2D材料图案850可以具有与基底110的表面平行的原子层。例如,2D材料图案850可以包括位于基底110的凹部110R的下表面上的第一部分851、位于基底110的凹部110R的侧表面上第二部分852以及位于基底110的主表面上的第三部分853。位于2D材料图案850的第一部分851内的原子层可以基本平行于基底110的凹部110R的下表面。位于2D材料图案850的第二部分852内的原子层可以基本平行于基底110的凹部110R的侧表面。位于2D材料图案850的第三部分853内的原子层可以基本平行于基底110的主表面。根据一些实施例,基底110的凹部110R的下表面可以与基底110的凹部110R的侧表面基本正交。在这种情况下,位于2D材料图案850的第二部分852内的原子层可以基本垂直于基底110的主表面。
栅极结构GS可以沿着基底110的凹部110R在第一方向X上延伸。栅极结构GS可以包括栅极绝缘层160和栅电极170。栅极结构GS可以与2D材料图案850的第一部分851接触。根据一些实施例,栅极结构GS还可以与2D材料图案850的第三部分853接触。第一电极120可以与2D材料图案850的一端接触。第二电极140可以与2D材料图案850的另一端接触。
图9A是根据发明构思的实施例的包括2D材料的装置900的俯视图。图9B是沿着图9A的线AA'截取的剖视图。图9C是沿着图9A的线BB'截取的剖视图。
根据发明构思的实施例的包括2D材料的装置900可以是掩埋晶体管。在下文中,将描述根据图8A至图8C中示出的实施例的包括2D材料的装置800与根据本实施例的包括2D材料的装置900之间的差异。
参照图9A至图9C,2D材料图案850可以沿着基底110的凹部110R在第一方向X上延伸。2D材料图案850可以包括位于基底110的凹部110R的下表面上的第一部分851和位于基底110的凹部110R的侧表面上的第二部分852。栅极结构GS可以与2D材料图案850相交并且在第二方向Y上延伸。栅极结构GS可以与2D材料图案850的第一部分851和第二部分852接触。此外,栅极结构GS可以与基底110的主表面接触。
图10A是根据发明构思的实施例的包括2D材料的装置1000的俯视图。图10B是沿着图10A的线AA'截取的剖视图。图10C是沿着图10A的线BB'截取的剖视图。
根据发明构思的实施例的包括2D材料的装置1000可以是鳍式晶体管。在下文中,将描述根据图9A至图9C中示出的实施例的包括2D材料的装置900与根据本实施例的包括2D材料的装置1000之间的差异。
基底110可以具有从基底110的主表面突出并在第一方向X上延伸的鳍110F。2D材料图案850可以沿着基底110的鳍110F在第一方向X上延伸。2D材料图案850可以包括位于基底110的鳍110F的上表面上的第一部分851和位于基底110的鳍110F的侧表面上的第二部分852。根据一些实施例,2D材料图案850还可以包括位于基底110的主表面上的第三部分853。位于2D材料图案850的第一部分851内的原子层可以基本平行于基底110的鳍110F的上表面。位于2D材料图案850的第二部分852内的原子层可以基本平行于基底110的鳍110F的侧表面。根据一些实施例,基底110的鳍110F的上表面可以与基底110的鳍110F的侧表面基本正交。在这种情况下,位于2D材料图案850的第二部分852内的原子层可以基本垂直于基底110的主表面。栅极结构GS可以与2D材料图案850相交并且在第二方向Y上延伸。栅极结构GS可以与2D材料图案850的第一部分851、第二部分852和第三部分853接触。
图11A至图11H是根据发明构思的实施例的用于描述制造包括2D材料的装置的方法的剖视图。
参照图11A,在基底110上形成第一电极120和第一层间绝缘层125。
参照图11B,在第一电极120上形成绝缘图案130。
参照图11C,可以在绝缘图案130的表面上形成2D材料层150。可以通过化学材料与绝缘图案130的表面之间的反应来形成2D材料层150。例如,可以通过包括硫族元素的化学材料与包括过渡金属或过渡金属氧化物的绝缘图案130的表面之间的反应形成包括TMDC的2D材料层150。详细地,可以通过包括MoO2的绝缘图案130的表面与硫(S)蒸汽之间的硫化反应形成包括MoS2的2D材料层150。在MoO2与硫(S)蒸汽之间的硫化反应期间的工艺温度可以低于MoO2的升华温度。例如,反应温度可以为大约400℃至大约1100℃。由于MoO2在反应温度下保持固相,因此可以在绝缘图案130的表面上形成包括具有均匀厚度的MoS2的2D材料层150。由于强的Mo-O键合,可以形成厚度均匀且厚度小的2D材料层150。此外,随着反应时间增加,形成2D材料层150的原子层的数量增加,因此,可以通过调节反应时间来调节要形成的2D材料层150的厚度。可以通过调节2D材料层150的厚度来调节2D材料层150的带隙能量。
参照图11D,形成覆盖2D材料层150的栅极绝缘层160。可以通过例如原子层沉积形成栅极绝缘层160。
参照图11E,在栅极绝缘层160上形成栅电极170。可以通过例如形成栅极层(未示出)并且使栅极层(未示出)图案化来形成栅电极170。根据实施例,可以以全方位型使栅电极170图案化。在形成栅极层(未示出)的步骤中,例如,可以使用化学气相沉积、等离子体化学气相沉积或原子层沉积。在使栅极层(未示出)图案化的步骤中,例如,可以使用回蚀刻工艺。
参照图11F,在栅电极170上形成第二层间绝缘层180。可以通过例如化学气相沉积或等离子体化学气相沉积形成第二层间绝缘层180。
参照图11G,可以去除第二层间绝缘层180的一部分、栅极绝缘层160的一部分和2D材料层150的一部分,使得暴露绝缘图案130的上表面。可以去除2D材料层150的形成在绝缘图案130的上表面上的部分。在去除步骤中,例如,可以使用化学机械抛光(CMP)。
参照图11H,在绝缘图案130的上表面上形成第二电极140。可以将第二电极140形成为电连接到2D材料层150。
根据图11A至图11H中示出的工艺,可以制造根据图1A和图1B中示出的发明构思的实施例的包括2D材料的装置100。
当在图11E中所示的形成栅电极170的步骤中以双栅型形成栅电极170时,可以制造根据图2A和图2B中示出的发明构思的实施例的包括2D材料的装置200。
当在图11E中所示的形成栅电极170的步骤中以单栅型形成栅电极170时,可以制造根据图3A和图3B中示出的发明构思的实施例的包括2D材料的装置300。
当在图11G中示出的操作中未去除或部分地去除2D材料层150的形成在绝缘图案130的上表面上的部分时,可以制造根据图4A和图4B中示出的发明构思的实施例的包括2D材料的装置400。
图12A至图12E是根据发明构思的实施例的用于描述制造包括2D材料的装置的方法的剖视图。
参照图12A,在基底110上形成绝缘图案130。形成绝缘图案130的详细描述与参照图11B所描述的相同。
参照图12B,在基底110上形成器件隔离膜620。可以将器件隔离膜620形成为具有比绝缘图案130的高度低的高度,使得绝缘图案130的一部分可以不被器件隔离膜620覆盖。可以通过例如化学气相沉积、等离子体化学气相沉积或热氧化工艺形成器件隔离膜620。
参照图12C,在绝缘图案130的表面上形成2D材料层150。通过这样做,形成包括绝缘图案130和2D材料层150的沟道结构510。根据一些实施例,可以仅在绝缘图案130的未被器件隔离膜620覆盖的表面上形成2D材料层150。例如,如图12C中所示,可以在绝缘图案130的侧壁的一部分和上表面上形成2D材料层150。形成2D材料层150的详细描述与参照图11C所描述的相同。
参照图12D,在2D材料层150上形成栅极绝缘层160。
参照图12E,在栅极绝缘层160上形成栅电极170。形成栅电极170的详细描述与参照图11E所描述的相同。此后,分别在沟道结构510的两端上形成第一电极120(见图5A)和第二电极140(见图5A)。根据一些实施例,可以在图12C中示出的形成2D材料层150的步骤与图12D中示出的形成栅极绝缘层160的步骤之间形成第一电极120(见图5A)和第二电极140(见图5A)。
根据图12A至图12E中示出的工艺,可以制造根据图6A和图6B中示出的发明构思的实施例的包括2D材料的装置600。
根据一些实施例,与图12D和图12E不同,可以通过替换栅极方法来形成栅极绝缘层160和栅电极170。例如,首先形成牺牲栅极结构(未示出),然后形成覆盖牺牲栅极结构(未示出)的侧壁的层间绝缘层(未示出)。此后,去除牺牲栅极结构(未示出),并且可以在已经去除牺牲栅极结构(未示出)的空间中形成栅极绝缘层160和栅电极170。
当省略了图12B中示出的形成器件隔离膜620的步骤时,可以制造根据图5A和图5B中示出的发明构思的实施例的包括2D材料的装置500。
图13A至图13F是根据发明构思的实施例的用于描述制造包括2D材料的装置的方法的剖视图。
参照图13A,在基底110上形成第一层间绝缘层125。可以通过例如原子层沉积、热氧化、化学气相沉积或等离子体化学气相沉积来形成第一层间绝缘层125。
参照图13B,在第一层间绝缘层125上形成绝缘图案130。形成绝缘图案130的详细描述与参照图11B所描述的相同。
参照图13C,在绝缘图案130的表面上形成2D材料层150。形成2D材料层150的详细描述与参照图11C所描述的相同。
参照图13D,在2D材料层150上形成电极图案EP。
参照图13E,在电极图案EP上形成第二层间绝缘层180。可以通过例如化学气相沉积或等离子体化学气相沉积形成第二层间绝缘层180。
参照图13F,去除第二层间绝缘层180、电极图案EP和2D材料层150的一部分,使得暴露绝缘图案130的上表面。例如,可以使用从CMP等中选择的抛光工艺,或者可以使用诸如CMP的抛光工艺。通过去除电极图案EP的一部分,可以形成第一电极120和第二电极140。通过去除2D材料层150的形成在绝缘图案130的上表面上的部分,可以形成位于绝缘图案130的侧壁上并且彼此分开的一对2D材料层150。
根据图13A至图13F中示出的工艺,可以制造根据图7A和图7B中示出的发明构思的实施例的包括2D材料的装置700。
图14A至图14D是根据发明构思的实施例的用于描述制造包括2D材料的装置的方法的剖视图。
参照图14A,可以提供具有在第一方向X上延伸的凹部110R的基底110。
参照图14B,可以在基底110上形成在第二方向Y上延伸的材料图案1410。材料图案1410可以包括可以与化学材料反应从而形成2D材料的材料。例如,材料图案1410可以包括过渡金属氧化物或过渡金属。材料图案1410可以包括例如MoO2、MoO3或Mo。
参照图14C,可以用2D材料图案850替换材料图案1410(见图14B)。例如,材料图案1410(见图14B)可以与包括硫族元素的反应物反应。反应物可以是例如硫(S)蒸汽。
参照图14D,可以在2D材料图案850上形成栅极结构GS、第一电极120和第二电极140。
根据图14A至图14D中示出的工艺,可以制造根据图8A至图8C中示出的发明构思的实施例的包括2D材料的装置800。
图15A至图15E是根据发明构思的实施例的用于描述制造包括2D材料的装置的方法的剖视图。
参照图15A,可以提供具有在第一方向X上延伸的凹部110R的基底110。
参照图15B,可以在基底110上形成材料层1510。材料层1510可以包括可以与化学材料反应从而形成2D材料的材料。例如,材料层1510可以包括过渡金属氧化物或过渡金属。材料层1510可以包括例如MoO2、MoO3或Mo。
参照图15C,可以用2D材料层1520替换材料层1510。例如,材料层1510可以与包括硫族元素的反应物反应。反应物可以是例如硫(S)蒸汽。2D材料层1520可以包括位于基底110的凹部110R的下表面上的第一部分1521、位于基底110的凹部110R的侧表面上的第二部分1522以及位于基底110的主表面上的第三部分1523。
参照图15D,可以通过去除2D材料层1520的形成在基底110的主表面上的第三部分1523来形成2D材料图案850。例如,去除2D材料层1520的第三部分1523(见图15C)的步骤可以包括在2D材料层1520上形成覆盖层1540并且抛光覆盖层1540的一部分和2D材料层1520的第三部分1523,使得暴露基底110的主表面。
参照图15E,可以去除覆盖层1540(见图15D),然后可以在2D材料图案850上形成栅极结构GS、第一电极120(见图9A和图9C)和第二电极140(见图9A和图9C)。
根据图15A至图15E中示出的工艺,可以制造根据图9A至图9C中示出的发明构思的实施例的包括2D材料的装置900。
图16A至图16E是根据发明构思的实施例的用于描述制造包括2D材料的装置的方法的剖视图。
参照图16A,可以提供具有在第一方向X上延伸的鳍110F的基底110。
参照图16B,可以在基底110上形成材料层1510。
参照图16C,可以将材料层1510替换为2D材料层1520。
参照图16D,可以通过去除2D材料层1520的一部分来形成2D材料图案850。
参照图16E,可以在2D材料图案850上形成栅极结构GS、第一电极(见图10A和图10C)和第二电极140(见图10A和图10C)。
根据图16A至图16E中示出的工艺,可以制造根据图10A至图10C中示出的发明构思的实施例的包括2D材料的装置1000。
发明构思中公开的实施例应该仅被认为是描述性意义而不是为了限制的目的,并且发明构思的技术构思的范围不受实施例的限制。应该通过权利要求来分析发明构思的保护范围,并且应该分析的是,在等同于保护范围的范围内的所有技术构思包括在发明构思的正确范围内。
Claims (20)
1.一种包括二维材料的装置,所述装置包括:
基底;
第一电极,位于基底上;
绝缘图案,位于基底上,绝缘图案在与基底基本垂直的方向上从第一电极延伸;
第二电极,位于绝缘图案的上端上;
二维材料层,沿着绝缘图案的侧表面,二维材料层包括与绝缘图案的侧表面基本平行的至少一个原子层的二维材料;
栅极绝缘层,覆盖二维材料层;以及
栅电极,接触栅极绝缘层。
2.根据权利要求1所述的装置,其中,绝缘图案中的过渡金属元素与二维材料层中的过渡金属元素相同。
3.根据权利要求1所述的装置,其中,二维材料层包括过渡金属二硫化物。
4.根据权利要求1所述的装置,其中,绝缘图案包括过渡金属二氧化物。
5.根据权利要求1所述的装置,其中,
绝缘图案的侧表面与基底基本垂直,并且
二维材料的所述至少一个原子层与基底基本垂直。
6.一种包括二维材料的装置,所述装置包括:
基底;
沟道结构,位于基底上,沟道结构在与基底平行的第一方向上延伸,沟道结构包括绝缘图案和位于绝缘图案的表面上的二维材料层,并且二维材料层包括与绝缘图案的所述表面平行的至少一个原子层的二维材料;
第一电极和第二电极,位于基底上,第一电极和第二电极分别位于沟道结构的两端处;
栅电极,位于基底上,栅电极在与基底平行的第二方向上延伸,并且栅电极与沟道结构相交;以及
栅极绝缘层,位于沟道结构与栅电极之间。
7.根据权利要求6所述的装置,其中,栅极绝缘层接触沟道结构的侧表面和沟道结构的上表面。
8.一种包括二维材料的装置,所述装置包括:
基底;
绝缘图案,位于基底上;
一对二维材料层,位于绝缘图案的侧表面上,所述一对二维材料层中的每个包括与绝缘图案的侧表面平行的至少一个原子层的二维材料,并且所述一对二维材料层包括通过在其间插入绝缘图案而在与基底平行的第一方向上彼此间隔开的第一二维材料层和第二二维材料层;
第一电极,接触第一二维材料层;以及
第二电极,接触第二二维材料层。
9.一种包括二维材料的装置,所述装置包括:
基底,包括凹部,凹部从基底的主表面凹陷并在第一方向上延伸;
二维材料图案,位于基底上,二维材料图案与基底的凹部相交,二维材料图案在第二方向上延伸,二维材料图案包括与基底的表面平行的原子层;
栅极结构,接触二维材料图案,栅极结构沿着基底的凹部在第一方向上延伸;
第一电极,接触二维材料图案的第一端;以及
第二电极,接触二维材料图案的第二端。
10.根据权利要求9所述的装置,其中,二维材料图案包括过渡金属二硫化物。
11.根据权利要求9所述的装置,其中,
二维材料图案包括第一部分、第二部分和第三部分,二维材料图案的第一部分位于基底的凹部的下表面上,二维材料图案的第二部分位于基底的凹部的侧表面上,并且二维材料的第三部分位于基底的主表面上。
12.根据权利要求11所述的装置,其中,
基底的凹部的下表面与基底的凹部的侧表面基本正交,并且
位于二维材料图案的第二部分内的二维材料图案的原子层与基底的主表面基本垂直。
13.根据权利要求11所述的装置,其中,栅极结构接触二维材料图案的第一部分。
14.根据权利要求13所述的装置,其中,栅极结构接触二维材料图案的第二部分。
15.根据权利要求14所述的装置,其中,栅极结构接触二维材料图案的第三部分。
16.一种包括二维材料的装置,所述装置包括:
基底,包括凹部,凹部从基底的主表面凹陷并在第一方向上延伸;
二维材料图案,位于基底上,二维材料图案沿着基底的凹部在第一方向上延伸,二维材料图案包括第一部分和第二部分,第一部分位于基底的凹部的下表面上,并且第二部分位于基底的凹部的侧表面上;
栅极结构,与二维材料图案相交,栅极结构在第二方向上延伸;
第一电极,接触二维材料图案的第一端;
第二电极,接触二维材料图案的第二端。
17.根据权利要求16所述的装置,其中,栅极结构接触二维材料图案的第一部分和二维材料图案的第二部分。
18.根据权利要求17所述的装置,其中,栅极结构接触基底的主表面。
19.一种包括二维材料的装置,所述装置包括:
基底,包括从基底的主表面突出的鳍,鳍在第一方向上延伸;
二维材料图案,位于基底上,二维材料图案沿着鳍在第一方向上延伸,二维材料图案包括第一部分和第二部分,第一部分位于基底的鳍的上表面上,并且第二部分位于基底的鳍的侧表面上;
栅极结构,位于基底上,栅极结构与二维材料图案相交并在第二方向上延伸;
第一电极,接触二维材料图案的第一端;以及
第二电极,接触二维材料图案的第二端。
20.根据权利要求19所述的装置,其中,
二维材料图案还包括第三部分,并且
第三部分位于基底的主表面上。
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