CN109273436B - 显示装置 - Google Patents

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Publication number
CN109273436B
CN109273436B CN201811056847.6A CN201811056847A CN109273436B CN 109273436 B CN109273436 B CN 109273436B CN 201811056847 A CN201811056847 A CN 201811056847A CN 109273436 B CN109273436 B CN 109273436B
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light emitting
light
display device
electrically connected
substrate
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CN109273436A (zh
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奚鹏博
林振祺
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AU Optronics Corp
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AU Optronics Corp
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    • H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
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    • G—PHYSICS
    • G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
    • G09F—DISPLAYING; ADVERTISING; SIGNS; LABELS OR NAME-PLATES; SEALS
    • G09F9/00—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements
    • G09F9/30—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements
    • G09F9/33—Indicating arrangements for variable information in which the information is built-up on a support by selection or combination of individual elements in which the desired character or characters are formed by combining individual elements being semiconductor devices, e.g. diodes
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Abstract

一种显示装置，包括阵列基板、两个发光元件基板、多个第一连接元件以及多个第二连接元件。阵列基板包括两个像素电路。每个像素电路包括三个子像素电路、三个第一导电接垫以及一第二导电接垫。每个发光元件基板包括三个发光元件、三个第一连接垫以及一第二连接垫。多个第一连接元件分别电性连接对应的一个第一导电接垫至对应的一个第一连接垫。多个第二连接元件分别电性连接对应的一个第二导电接垫至对应的一个第二连接垫。

Description

显示装置
技术领域
本发明涉及一种显示装置，且特别涉及一种包括阵列基板以及至少两个发光元件基板的显示装置。
背景技术
目前，显示装置在制造过程中常会使用到巨量转移技术，巨量转移技术被用来将大量的发光元件(例如发光二极管)转置于电路基板上，接着使发光元件与电路基板上的像素电路电性连接。然而，在转置大量的发光元件时，发光元件容易对位失败，使发光元件不能正确的电性连接至电路基板。这些对位失败的发光元件严重的影响了显示装置的生产良率。因此，目前亟需一种可以解决前述问题的方法。
发明内容
本发明提供一种显示装置，具有优选的生产良率。
本发明的一种显示装置包括阵列基板、至少两个发光元件基板、多个第一连接元件以及多个第二连接元件。阵列基板包括载板以及主动元件层。主动元件层位于载板上，且包括两个像素电路、第一电源线与第二电源线。各像素电路包括至少三个子像素电路、至少三个第一导电接垫以及第二导电接垫。每个子像素电路包含驱动元件、切换元件及信号线。驱动元件具有第一端、第二端与控制端。驱动元件的控制端电性连接于信号线及切换元件。驱动元件的第一端电性连接于第一电源线。各第一导电接垫对应且电性连接于各驱动元件的第二端。第二导电接垫电性连接第二电源线。两个发光元件基板分别电性连接于对应的一个像素电路。各发光元件基板包括基板、至少三个发光元件、至少三个第一连接垫以及第二连接垫。三个发光元件位于基板上，且分别具有第一连接端以及第二连接端。三个第一连接垫分别电性连接对应的一个发光元件的第一连接端。第二连接垫电性连接三个发光元件的第二连接端，且各第一连接垫与第二连接垫相互分隔开来。多个第一连接元件，分别电性连接对应的一个第一导电接垫至对应的一个第一连接垫。多个第二连接元件，分别电性连接对应的一个第二导电接垫至对应的一个第二连接垫。
基于上述，本发明可以降低显示装置的工艺难度，并改善显示装置生产良率不足的问题。
为让本发明的上述特征和优点能更明显易懂，下文特举实施例，并配合说明书附图作详细说明如下。
附图说明
图1A～图1D是依照本发明的一实施例的一种显示装置的制造方法的俯视图。
图2是沿着图1D剖面线11’的剖面示意图。
图3是依照本发明的一实施例的一种显示装置的局部电路示意图。
图4是依照本发明的一实施例的一种显示装置的局部电路示意图。
图5是依照本发明的一实施例的一种显示装置的剖面示意图。
图6是依照本发明的一实施例的一种显示装置的剖面示意图。
图7是依照本发明的一实施例的一种显示装置的剖面示意图。
图8A是依照本发明的一实施例的一种显示装置的俯视图。
图8B是沿着图8A剖面线22’的剖面示意图。
图9A是依照本发明的一实施例的一种像素电路的俯视图。
图9B是依照本发明的一实施例的一种发光元件基板的俯视图。
图10是依照本发明的一实施例的一种像素电路的俯视图。
图11是依照本发明的一实施例的一种显示装置的局部剖面示意图。
图12是依照本发明的一实施例的一种显示装置的局部剖面示意图。
附图标记说明：
10、20、30、40、50：显示装置
110：载板
120：主动元件层
AL：粘着层
AS：阵列基板
B、B’：基板
BM：遮光层
CA：电容
CE1：第一连接元件
CE2：第二连接元件
CP1：第一导电接垫
CP2：第二导电接垫
CP1a、CP2a、P1a、P2a：接垫
CR：切割道
D：第二端
D1：挡墙
D2、2IL、GI、ILD、130、140：绝缘层
DC1、DC2：驱动电路
E1：第一连接端
E2：第二连接端
EL：发光层
G：空隙
GA：控制端
GS：生长基板
H1：第一开口
H2：第二开口
I：连接结构
LED：发光元件
L：发光区
LO：布线空间
LS：发光元件基板
LU：发光单元
M1：第一导电层
M2：第二导电层
MK：对位标记
O：开口
P1：第一连接垫
P2：第二连接垫
PL：偏光板
PL1、PL3：第一电源线
PL2、PL4：第二电源线
PX：像素电路
S：第一端
SB：基板
S1、S2：节距
SL、SL1、SL2：信号线
SM1、SM2：半导体层
SP：子像素电路
ST：支撑构件
T1：驱动元件
T2：切换元件
X1：第一色彩转换元件
X2：第二色彩转换元件
具体实施方式
以下将以附图公开本发明的多个实施方式，为明确说明，许多实务上的细节将在以下叙述中一并说明。然而，应了解的是，这些实务上的细节不应用被以限制本发明。也就是说，在本发明部分实施方式中，这些实务上的细节是非必要的。此外，为简化附图起见，一些现有的结构与元件在附图中将省略或以简单示意的方式为的。
在整个说明书中，相同的附图标记表示相同或类似的元件。在附图中，为了清楚起见，放大了层、膜、面板、区域等的厚度。应当理解，当诸如层、膜、区域或基板的元件被称为在另一元件「上」或「连接到」另一元件时，其可以直接在另一元件上或与另一元件连接，或者所述元件与所述另一元件中间可以也存在其他元件。相反，当元件被称为「直接在另一元件上」或「直接连接到」另一元件时，所述元件与所述另一元件中间不存在其他元件。如本文所使用的，「连接」可以指物理及/或电性连接。再者，二元件互相「电性连接」或「耦合」”是可为二元件间存在其它元件。
应当理解，尽管术语「第一」与「第二」等在本文中可以用于描述各种元件、部件、区域、层及/或部分，但是这些元件、部件、区域、及/或部分不应受这些术语的限制。这些术语仅用于将一个元件、部件、区域、层或部分与另一个元件、部件、区域、层或部分区分开。
本文使用的术语仅仅是为了描述本发明特定的实施例，而不是用来限制本发明。举例来说，本文使用的「一」、「一个」和「该」并非限制元件为单数形式或多个形式。本文使用的「或」表示「及/或」。如本文所使用的，术语「及/或」包括一个或多个相关所列项目的任何和所有组合。还应当理解，当在本说明书中使用时，术语「包括」或「包含」指定所述特征、区域、整体、步骤、操作、元件的存在及/或部件，但不排除一个或多个其它特征、区域、整体、步骤、操作、元件、部件及/或其组合的存在或添加。
此外，诸如「下」或「底部」和「上」或「顶部」的相对术语可在本文中用于描述一个元件与另一元件的关系，如图所示。应当理解，相对术语旨在包括除了图中所示的方位的外的装置的不同方位。例如，如果一个附图中的装置翻转，则原本被描述为在元件的「下」侧的其他元件将变成被定向在元件的「上」侧。因此，取决于附图的特定取向，示例性术语「下」可以包括「下」和「上」的取向。类似地，如果一个附图中的装置翻转，则被描述为原本在元件「下」或「下方」的其他元件将变成被定向为在其它元件「上方」。因此，示例性术语「下」或「下方」可以包括上方和下方的取向。
本文使用的「约」或「实质上」包括所述值和在本领域普通技术人员确定的特定值的可接受的偏差范围内的平均值，考虑到所讨论的测量和与测量相关的误差的特定数量(即，测量系统的限制)。例如，「约」可以表示在所述值的一个或多个标准偏差内，或±30％、±20％、±10％、±5％内。再者，本文使用的「约」或「实质上」可依光学性质、蚀刻性质或其它性质，来选择较可接受的偏差范围或标准偏差，而可不用一个标准偏差适用全部性质。
除非另有定义，本文使用的所有术语(包括技术和科学术语)具有与本发明所属领域的普通技术人员通常理解的相同的含义。将进一步理解的是，诸如在通常使用的字典中定义的那些术语应当被解释为具有与它们在相关技术和本发明的上下文中的含义一致的含义，并且将不被解释为理想化的或过度正式的意义，除非本文中明确地这样定义。
图1A～图1D是依照本发明的一实施例的一种显示装置的制造方法的俯视图。
请先参考图1A，于生长基板GS上形成多个发光元件LED。
请参考图1B，利用巨量转移技术将生长基板GS上的多个发光元件LED转置于基板B上。需注意的是，图1B省略示出了基板B上的部分构件。
请参考图1C，切割基板B及部分位于其上的构件，以形成多个基板B’。虽然在图1C中，以每个发光元件基板LS具有三个发光元件LED为例，但本发明不以此为限。发光元件基板LS包括三个发光元件LED，也可以说发光元件基板LS具有三个以上的发光元件LED。每个发光元件LED，优选地，可为微型发光元件。微型发光元件的尺寸例如小于100微米，优选地，小于50微米，但大于0微米。微型发光元件可例如是有机发光元件或无机发光元件，优选地，可为无机发光元件，但不限于此。微型发光元件的结构可为P-N二极管、P-I-N二极管、或其它合适的结构。微型发光元件可为有机材料(例如：有机高分子发光材料、有机小分子发光材料、有机配合物发光材料、或其它合适的材料、或前述材料的组合)、无机材料(例如：钙钛矿材料、稀土离子发光材料、稀土荧光材料、半导体发光材料、或其它合适的材料、或前述材料的组合)、或其它合适的材料、或前述材料的组合。
在一些实施例中，将发光元件LED转置于基板B上之后，还会于基板B上形成挡墙、连接垫、或其他合适的构件、或前述元件至少一者，接着才切割基板B，但本发明不以此为限。于一些实施例中，将发光元件LED转置于基板B上之前，会先在基板B上形成挡墙、连接垫、或其他合适的构件、或前述元件至少一者。
在一些实施例中，切割基板B之前或切割基板B之后可选择性的对转置后的发光元件LED进行检测，以确定发光元件LED是否对位正确。
请参考图1D，将多个发光元件基板LS置于阵列基板AS上以完成显示装置10。在本实施例中，发光元件基板LS通过阵列基板AS的至少一信号线SL(例如：信号线SL1以及信号线SL2)而电性连接至驱动电路DC1以及驱动电路DC2。于一实施例中，驱动电路DC1及驱动电路DC2其中至少一者或者是整合驱动电路DC1与DC2的驱动电路可位于多个发光元件LED之间。于其它实施例中，驱动电路DC1或DC2可为芯片压合于阵列基板AS上或者是制造阵列基板时，一起制作的电路。
图2是沿着图1D剖面线11’的剖面示意图。图3是依照本发明的一实施例的一种显示装置的局部电路示意图。图3例如是图2的显示装置的局部电路示意图。请参考图2与图3，阵列基板AS包括载板110以及主动元件层120。
主动元件层120位于载板110上且其可包括至少两个像素电路PX、第一电源线PL1、第二电源线PL2、多个第一导电接垫CP1以及多个第二导电接垫CP2。各像素电路PX包括多个子像素电路SP、多个第一导电接垫CP1以及至少一个第二导电接垫CP2。在优选的实施例中，各像素电路PX包括至少三个子像素电路SP、至少三个第一导电接垫CP1以及至少一个第二导电接垫CP2。虽然图2的剖面图是以主动元件层120包括六个第一导电接垫CP1以及六个第二导电接垫CP2为例，但本发明不以此为限。在一些实施例中，优选地，主动元件层120上包括六个第一导电接垫CP1以及两个第二导电接垫CP2，可提升后续发光元件基板LS与主动元件层120对位的容计度。然而，本发明不限于前述的第一导电接垫CP1及/或第二导电接垫CP2的个数。
在阵列基板AS中，每个子像素电路SP至少包含驱动元件T1、切换元件T2、至少二信号线SL(例如：信号线SL1及信号线SL2)。驱动元件T1与切换元件T2分别具有第一端SD1、第二端SD2与控制端GA。驱动元件T1的控制端GA电性连接于切换元件T2，例如：驱动元件T1的控制端GA电性连接于切换元件T2的第二端SD2。在本实施例中，驱动元件T1的控制端GA通过切换元件T2而电性连接于信号线SL1及信号线SL2，例如：驱动元件T1的控制端GA分别通过切换元件T2的控制端GA与第一端SD1而电性连接于信号线SL1及信号线SL2，但不限于此。信号线SL1及信号线SL2例如可分别为数据线及扫描线，但不限于此。驱动元件T1的第一端SD1电性连接于第一电源线PL1。在本实施例中，驱动元件T1与切换元件T2的晶体管的极性可例如为P型薄膜晶体管，但本发明不以此为限。在本实施例中，每个子像素电路SP还可包含电容CA，电容CA的一端电性连接于驱动元件T1的控制端GA，例如：电容CA的一端电性连接于驱动元件T1的控制端GA与切换元件T2的第二端SD2，且电容CA的另一端电性连接于第一电源线PL1以及驱动元件T1的第一端SD1。
于一实施例中，依照驱动元件T1与切换元件T2的晶体管的极性可例如为N型薄膜晶体管，且可参阅图4，图4是依照本发明的一实施例的一种显示装置的局部电路示意图。在此必须说明的是，图4的实施例沿用图3的实施例的元件标号与部分内容，其中采用相同或近似的标号来表示相同或近似的元件，并且省略了相同技术内容的说明。关于省略部分的说明可参考前述实施例，在此不赘述。在本实施例中，驱动元件T1的第一端SD1电性连接于第一电源线PL3。电容CA的一端电性连接于驱动元件T1的控制端GA，例如：电容CA的一端电性连接于驱动元件T1的控制端GA与切换元件T2的第二端SD2，且电容CA的另一端电性连接于第一电源线PL3以及驱动元件T1的第一端SD1。于其它实施例中，驱动元件T1与切换元件T2的晶体管的极性其中一者可例如为N型薄膜晶体管，驱动元件T1与切换元件T2的晶体管的极性其中另一者可例如为P型薄膜晶体管。
此外，可将前述实施例的驱动元件T1、切换元件T2与电容CA简称为两个主动元件与一个电容(可表示为2T1C)。于其他实施例中，每个子像素电路SP也可包含其他的主动元件，且每个子像素电路SP所包含的驱动元件T1、切换元件T2以及其他的主动元件与电容的个数可依设计变更，而可例如被简称为三个主动元件和一个或两个电容(可表示为3T1C/2C)、四个主动元件和一个或两个电容(可表示为4T1C/2C)、五个主动元件和一个或两个电容(可表示为5T1C/2C)、六个主动元件和一个或两个电容(可表示为6T1C/2C)、或是其他适合的电路配置。
于本实施例中，各第一导电接垫CP1对应且电性连接于各驱动元件T1的第二端SD2。第二导电接垫CP2电性连接第二电源线PL2(参阅图3)或第二电源线PL4(参阅图4)。
请参考图2、图3及图4，在一些实施例中，阵列基板AS还包括绝缘层130。绝缘层130覆盖各像素电路PX的三个子像素电路SP，各像素电路PX的第一导电接垫CP1分别通过绝缘层130的第一开口H1电性连接于对应的一个驱动元件T1的第二端SD2，且各像素电路PX的第二导电接垫CP2通过绝缘层130的第二开口H2电性连接于第二电源线PL2(参阅图3)或第二电源线PL4(参阅图4)。
两个发光元件基板LS分别电性连接于对应的一个像素电路PX中的子像素电路SP。在本实施例中，每个发光元件基板LS电性连接于对应的至少三个子像素电路SP。发光元件基板LS包括基板B’、多个发光元件LED、多个第一连接垫P1以及多个第二连接垫P2。多个发光元件LED可以包括实质上相同或不同颜色的发光二极管，例如包括红色发光二极管、绿色发光二极管及蓝色发光二极管。虽然图2是以发光元件基板LS包括三个第一连接垫P1以及三个第二连接垫P2为例，但本发明不以此为限。在一些实施例中，优选地，发光元件基板LS上包括三个第一连接垫P1以及一个第二连接垫P2，可提升后续发光元件基板LS与主动元件层120对位的容计度。然而，本发明不限于前述的第一导电接垫CP1及/或第二导电接垫CP2的个数与位置。两个发光元件基板LS之间具有一空隙G，但本发明不以此为限。换句话说，每个发光元件基板LS所对应的像素电路PX所占据的面积可以大于单个发光元件基板LS的面积，但本发明不以此为限。
至少三个发光元件LED位于基板B’上，且分别具有第一连接端E1以及第二连接端E2。在本实施例中，发光元件LED是水平式发光二极管，第一连接端E1以及第二连接端E2例如对应发光元件LED不同极性的半导体层，第一连接端E1以及第二连接端E2可以是发光元件LED不同极性的半导体层的一部分，亦可以是连接至发光元件LED不同极性的半导体层的电极。在本实施例中，发光元件LED的第一连接端E1以及第二连接端E2朝向对应的基板B’，因此发光元件LED可以轻易的电性连接至第一连接垫P1以及第二连接垫P2。
多个第一连接垫P1，分别电性连接于对应的发光元件LED的第一连接端E1。多个第二连接垫P2，分别电性连接于对应的发光元件LED的第二连接端E2。在一些优选的实施例中，每个发光元件LED的第二连接端E2皆连接至实质上相同的共用电压，因此每个发光元件LED的第二连接端E2可以电性连接至同一个第二连接垫P2。从另一方面观的，一个第二连接垫P2可以电性连接至少三个发光元件LED的第二连接端E2。各第一连接垫P1与第二连接垫P2相互分隔开来。在一些实施例中，第一连接垫P1与第二连接垫P2其中至少一者可为单层或多层结构，且其材料包括导电胶、焊料、非透明导电材料、透明或半透明导电材料、或其他合适的导电材料，但本发明不以此为限。非透明导电材料包含金属、合金、或其它合适的材料、前述材料的氧化物、前述材料的氮化物、前述材料的氮氧化物、或前述至少二种材料的组合。透明或半透明导电材料包含铟锡氧化物、铟锌氧化物、铟镓锌氧化物、铟镓氧化物、厚度小于60埃的金属或合金、纳米碳管/杆、或其它合适的材料、或前述至少二种材料的组合。
在本实施例中，发光元件基板LS的发光元件LED通过阵列基板AS驱动。发光元件基板LS可不包括驱动发光元件LED的元件，例如：主动元件，因此，发光元件基板LS的重工成本较低。
多个第一连接元件CE1，分别电性连接于对应的一个第一导电接垫CP1至对应的一个第一连接垫P1。多个第二连接元件CE2，分别电性连接对应的一个第二导电接垫CP2至对应的一个第二连接垫P2。第一连接元件CE1与第二连接元件CE2其中至少一者可为单层或多层结构，且其材料，优选地，包括导电胶、焊料、或其他合适的导电材料，但不限于此。于其它实施例中，非透明导电材料、透明或半透明导电材料、或被前述至少一者的导电材料包覆的绝缘突柱(绝缘突柱往载板110延伸)、或其他合适的导电材料。非透明导电材料包含金属、合金、或其它合适的材料、前述材料的氧化物、前述材料的氮化物、前述材料的氮氧化物、或前述至少二种材料的组合。透明或半透明导电材料包含铟锡氧化物、铟锌氧化物、铟镓锌氧化物、铟镓氧化物、厚度小于60埃的金属或合金、纳米碳管/杆、或其它合适的材料、或前述至少二种材料的组合。绝缘突柱可为单层或多层结构，且其材料包含有机材料、无机材料、或其它合适的材料。
基于上述，由于发光元件LED是位于发光元件基板LS中，可以直接选择将发光元件LED在转置过程后有正确对位的发光元件基板LS电性连接至阵列基板AS。即使发光元件LED在转置过程后没有正确对位，顶多需要对发光元件基板LS进行重工。因此，相较于直接利用巨量转移技术将发光元件LED转置于阵列基板AS上，显示装置10可以有较高的生产良率。
图5是依照本发明的一实施例的一种显示装置的剖面示意图。在此必须说明的是，图5的实施例沿用图2的实施例的元件标号与部分内容，其中采用相同或近似的标号来表示相同或近似的元件，并且省略了相同技术内容的说明。关于省略部分的说明可参考前述实施例，在此不赘述。
图5的显示装置20与图2的显示装置10的主要差异在于，发光元件LED有不同的设置方式。请参考图5，显示装置20的发光元件LED通过粘着层AL固定于基板B’上。各发光元件LED的第一连接端E1以及第二连接E2端朝向该阵列基板AS。
在本实施例中，先将发光元件LED转置于基板B’上且经由粘着层AL固定于基板B’上以后，才于发光元件LED上形成多个第一连接垫P1以及多个第二连接垫P2。多个第一连接垫P1，分别电性连接于对应的发光元件LED的第一连接端E1。多个第二连接垫P2分别电性连接于对应的发光元件LED的第二连接端E2。在本实施例中，第一连接垫P1与第二连接垫P2可为单层或多层结构，且其材料例如包括非透明导电材料、透明或半透明导电材料或其他合适的导电材料。非透明导电材料包含金属、合金、或其它合适的材料、前述材料的氧化物、前述材料的氮化物、前述材料的氮氧化物、或前述至少二种材料的组合。透明或半透明导电材料包含铟锡氧化物、铟锌氧化物、铟镓锌氧化物、铟镓氧化物、厚度小于60埃的金属或合金、纳米碳管/杆、或其他合适的材料、或前述至少二种材料的组合。
在本实施例中，若发光元件LED的发光方向例如朝向阵列基板AS的载板110。阵列基板AS可选择性的还包括位于发光元件LED的发光方向上的偏光板PL。举例而言，偏光板PL位于载板110的表面(例如：外表面)，借此降低环境光对显示装置20的显示品质的影响，但不限于此。使用者是观看载板110的外表面或偏光板PL外表面，而不是观看基板B’的外表面，因此，载板110的外表面或偏光板PL外表面可视为显示面。
此外，本实施例的偏光板PL亦可运用于前述实施例中，例如图2中。若偏光板PL运用于图2的发光元件LED，且图2的发光元件LED的发光方向例如朝向发光元件基板LS的基板B’，则偏光板PL设置于基板B’的表面(例如：外表面)，且使用者是观看基板B’的外表面或偏光板PL的外表面，而不是观看阵列基板AS的载板110的外表面，此时基板B’的外表面或偏光板PL的外表面可视为显示面。若偏光板PL运用于图2的发光元件LED，且图2的发光元件LED的发光方向例如朝向阵列基板AS的载板110，则偏光板PL设置于载板110的表面(例如：外表面)，且使用者是观看载板110的外表面或偏光板PL的外表面，而不是观看发光元件基板LS的基板B’的外表面，此时载板110的外表面或偏光板PL外表面可视为显示面。
基于上述，由于发光元件LED是位于发光元件基板LS中，可以直接选择将发光元件LED在转置过程后有正确对位的发光元件基板LS电性连接至阵列基板AS。即使发光元件LED在转置过程后没有正确对位，顶多需要对发光元件基板LS进行重工。因此，相较于直接利用巨量转移技术将发光元件LED转置于阵列基板AS上，显示装置20可以有较高的生产良率。
图6是依照本发明的一实施例的一种显示装置的剖面示意图。在此必须说明的是，图6的实施例沿用图2的实施例的元件标号与部分内容，其中采用相同或近似的标号来表示相同或近似的元件，并且省略了相同技术内容的说明。关于省略部分的说明可参考前述实施例，在此不赘述。图6的显示装置30与图2的显示装置10的主要差异在于，发光元件LED有不同的设置方式。请参考图6，显示装置30的发光元件LED例如为垂直式发光二极管，各发光元件LED的第一连接端E1与第二连接端E2中的一者朝向对应的基板B’，且各发光元件LED的第一连接端E1与第二连接端E2中的另一者朝向阵列基板AS。在本实施例中，各发光元件LED的第一连接端E1朝向对应的基板B’，且第二连接端E2朝向阵列基板AS。在一些实施例中，发光元件LED的表面可具有暴露出第一连接端E1与第二连接端E2的绝缘层IL。
在本实施例中，将发光元件LED转置于基板B’上，并使发光元件LED的第一连接端E1电性连接至对应的第一连接垫P1。接着形成连接结构I于发光元件LED上，以使发光元件LED的第二连接端E2电性连接至对应的第二连接垫P2。
基于上述，由于发光元件LED是位于发光元件基板LS中，可以直接选择将发光元件LED在转置过程后有正确对位的发光元件基板LS电性连接至阵列基板AS。即使发光元件LED在转置过程后没有正确对位，顶多需要对发光元件基板LS进行重工。因此，相较于直接利用巨量转移技术将发光元件LED转置于阵列基板AS上，显示装置30可以有较高的生产良率。
图7是依照本发明的一实施例的一种显示装置的剖面示意图。在此必须说明的是，图7的实施例沿用图5的实施例的元件标号与部分内容，其中采用相同或近似的标号来表示相同或近似的元件，并且省略了相同技术内容的说明。关于省略部分的说明可参考前述实施例，在此不赘述。图7的显示装置40与图5的显示装置20的主要差异在于，主动元件层120有不同的设置方式。
在本实施例中，主动元件层120包括对应各发光元件LED的光穿透区TR。子像素电路SP中的导线、主动元件及无源元件例如未设置于光穿透区TR中。通过光穿透区TR的设计，可以提升显示装置40的发光效率。于部分实施例中，光穿透区TR中可设置色彩转换层(未示出)，可更为改善显示装置40各色的色纯度或色饱合度。
基于上述，由于发光元件LED是位于发光元件基板LS中，可以直接选择将发光元件LED在转置过程后有正确对位的发光元件基板LS电性连接至阵列基板AS。即使发光元件LED在转置过程后没有正确对位，顶多需要对发光元件基板LS进行重工。因此，相较于直接利用巨量转移技术将发光元件LED转置于阵列基板AS上，显示装置40可以有较高的生产良率。
图8A是依照本发明的一实施例的一种显示装置的俯视图。图8B是沿着图8A剖面线22’的剖面示意图，其中图8B示出了发光元件LED及遮光层BM，并省略示出其他构件。在此必须说明的是，图8A与图8B的实施例沿用图2的实施例的元件标号与部分内容，其中采用相同或近似的标号来表示相同或近似的元件，并且省略了相同技术内容的说明。关于省略部分的说明可参考前述实施例，在此不赘述。
请参考图8A与图8B，显示装置50还包括遮光层BM。遮光层BM设置于至少两个发光元件基板LS上且遮蔽至少两个发光元件基板LS之间的空隙G。遮光层BM具有多个开口O分别暴露出发光元件基板LS的发光元件LED。
在本实施例中，遮光层BM设置于基板SB上，一个基板SB对应多个发光元件基板LS设置。多个发光元件基板LS位于基板SB以及阵列基板AS之间。在本实施例中，基板SB与发光元件基板LS之间可选择性的更具有支撑构件ST，支撑构件ST例如对应遮光层BM设置，但本发明不以此为限。
在本实施例中，显示装置50可选择性的还包括第一色彩转换元件X1。第一色彩转换元件X1位于发光元件基板LS上，且发光元件LED的发光方向朝向各发光元件基板LS的基板B’。在一些实施例中，第一色彩转换元件X1可以包括红色滤光元件、绿色滤光元件及蓝色滤光元件，且不同颜色的滤光元件可分别对应不同的发光元件LED设置。举例而言，若三个子像素分别为红色子像素、绿色子像素与蓝色子像素，则第一色彩转换元件X1包括分别对应于红色子像素、绿色子像素及蓝色子像素的红色滤光元件、绿色滤光元件及蓝色滤光元件，且各色子像素的发光元件可分别选择为红光、蓝光或绿光的发光元件。于部分实施例中，各色子像素的发光元件可选择白光，则可经由前述第一色彩转换元件X1的红色滤光元件、绿色滤光元件及蓝色滤光元件来显示出不同的色彩。于其它实施例中，各色子像素的发光元件可选择蓝光及/或紫外光，则可经由前述第一色彩转换元件X1的红色转换元件、绿色转换元件及蓝色转换元件来显示出不同的色彩。若，发光元件LED的光色为蓝光，则蓝色转换元件也可依选择而不设置。
在本实施例中，显示装置50可选择性的还包括第二色彩转换元件X2。第二色彩转换元件X2位于发光元件基板LS上，且第二色彩转换元件X2位于第一色彩转换元件X1与发光元件LED之间。在一些实施例中，第二色彩转换元件X2可以包括红色量子点材料、绿色量子点材料及蓝色量子点材料，且不同颜色的量子点材料可分别对应不同的发光元件LED设置。此时，发光元件LED可选用为紫外光或蓝光的发光元件。于其他实施例，显示装置50也可选择性的还包括第二色彩转换元件X2且不包括第一色彩转换元件X1。第二色彩转换元件X2位于发光元件基板LS上，发光元件LED可选用为紫外光或蓝光的发光元件。若，发光元件LED的光色为蓝光，则蓝色量子点材料也可依选择而不设置。
基于上述，由于发光元件LED是位于发光元件基板LS中，可以直接选择将发光元件LED在转置过程后有正确对位的发光元件基板LS电性连接至阵列基板AS。即使发光元件LED在转置过程后没有正确对位，顶多需要对发光元件基板LS进行重工。因此，相较于直接利用巨量转移技术将发光元件LED转置于阵列基板AS上，显示装置50可以有较高的生产良率。
图9A是依照本发明的一实施例的一种像素电路的俯视图。图9B是依照本发明的一实施例的一种发光元件基板的俯视图。在此必须说明的是，图9A与图9B的实施例沿用图2的实施例的元件标号与部分内容，其中采用相同或近似的标号来表示相同或近似的元件，并且省略了相同技术内容的说明。关于省略部分的说明可参考前述实施例，在此不赘述。
请参考图9A，各像素电路PX包括至少三个子像素电路SP、至少三个第一导电接垫CP1以及一个第二导电接垫CP2。请参考图2、图3与图9A，各像素电路的第一导电接垫CP1分别通过绝缘层130的第一开口H1电性连接于对应的一个驱动元件T1的第二端SD2，且各像素电路PX的第二导电接垫CP2通过绝缘层130的第二开口H2电性连接于第二电源线PL2。在本实施例中，每个子像素电路SP具有一个第一开口H1以及一个第二开口H2，但本发明不以此为限。相邻两个子像素电路SP之间具有节距S1。像素电路PX的宽度约等于三倍的节距S1。在本实施例中，两相邻的子像素电路SP之间具有边界，第一导电接垫CP1其中至少一者及/或第二导电接垫CP2与两相邻的子像素电路SP之间的边界部分重叠。
请参考图9B，各发光元件基板LS包括基板B’、至少三个发光元件LED、至少三个第一连接垫P1以及第二连接垫P2。在本实施例中，各发光元件基板LS包括至少一个发光单元LU，每个发光单元LU包括至少三个发光区L，每个发光区L中具有至少一个发光元件LED。发光区L的宽度约等于相邻两个发光元件LED的节距S2。发光单元LU的宽度约等于三倍的节距S2。
在本实施例中，相邻两个发光元件LED的节距S2小于相邻两个子像素电路之间的节距S1，也就是说发光单元LU的宽度小于像素电路PX的宽度。因此，在制造发光元件基板LS的过程中，切割载板时可以有较宽的切割道CR，且每个发光元件LED所对应的子像素电路SP具有较大的线路布局空间。
图10是依照本发明的一实施例的一种像素电路的俯视图。在此必须说明的是，图10的实施例沿用图9A与图9B的实施例的元件标号与部分内容，其中采用相同或近似的标号来表示相同或近似的元件，并且省略了相同技术内容的说明。关于省略部分的说明可参考前述实施例，在此不赘述。
在本实施例中，两相邻的像素电路PX之间具有布线空间LO。在一些实施例中，第一电源线PL1与第二电源线PL2的至少其中一者，位于两个像素电路PX之间的布线空间LO中。
在一些实施例中，相邻两个发光元件LED的节距S2约等于相邻两个子像素电路之间的节距S1，也就是说发光单元LU的宽度约等于像素电路PX的宽度。
通过将第一电源线PL1与第二电源线PL2的至少其中一者设置于位于两个像素电路PX之间，可以减少第一电源线PL1与第二电源线PL2对显示装置的发光效率所造成的影响。
图11是依照本发明的一实施例的一种显示装置的局部剖面示意图。在此必须说明的是，图11的实施例沿用图6的实施例的元件标号与部分内容，其中采用相同或近似的标号来表示相同或近似的元件，并且省略了相同技术内容的说明。关于省略部分的说明可参考前述实施例，在此不赘述。
请参考图3与图11，在本实施例中，阵列基板AS包括载板110以及主动元件层120。主动元件层120位于载板110上，且包括至少两个像素电路PX、第一电源线与第二电源线(例如：第一电源线PL1与第二电源线PL2)，其中图11省略示出了阵列基板AS的的部分构件。各像素电路PX包括至少三个子像素电路SP、至少三个第一导电接垫CP1以及第二导电接垫CP2。每个子像素电路PX至少包含驱动元件T1、切换元件T2及信号线SL。
请参考图3与图11，在本实施例中，驱动元件T1具有半导体通道层CH、第一端SD1、第二端SD2与控制端GA。半导体通道层CH重叠于控制端GA，且与控制端GA之间夹有绝缘层GI。驱动元件T1的控制端GA电性连接于信号线SL(例如：信号线SL1及信号线SL2)及切换元件T2。绝缘层ILD覆盖绝缘层GI，驱动元件T1的第一端SD1与第二端SD2贯穿绝缘层GI以及绝缘层ILD，并电性连接至半导体通道层CH。驱动元件T1的第一端SD1电性连接于第一电源线PL1。绝缘层130覆盖绝缘层ILD。第一导电接垫CP1位于绝缘层130上，且通过绝缘层130第一开口H1而电性连接至驱动元件T1的第二端SD2。第二导电接垫CP2位于绝缘层130上，且通过绝缘层130第二开口H2而电性连接至第二电源线PL2(可参阅图2与图9A)。
在一些实施例中，阵列基板AS还可以选择性包括绝缘层140、接垫CP1a以及接垫CP2a。绝缘层140覆盖绝缘层130，并暴露出第一导电接垫CP1以及第二导电接垫CP2。接垫CP1a以及接垫CP2a位于绝缘层140上，且分别电性连接至第一导电接垫CP1以及第二导电接垫CP2。
阵列基板AS还可以选择性包括第一导电层M1以及第二导电层M2。第一导电层M1可例如与驱动元件T1的控制端GA属于同一导电膜层，第二导电层M2可例如与驱动元件T1的第一端SD1与第二端SD2属于同一导电膜层，但本发明不以此为限。第一导电层M1以及第二导电层M2例如可作为信号线、电源线、电容或其他构件。
在本实施例中，阵列基板AS还包括多个第一色彩转换元件X1。第一色彩转换元件X1对应各发光元件基板LS的该发光元件LED设置。举例来说，三个第一色彩转换元件X1对应三个发光元件LED设置。
发光元件基板LS电性连接于对应的像素电路PX。各发光元件基板LS包括基板B’、至少三个发光元件LED、至少三个第一连接垫P1以及第二连接垫P2。发光元件LED位于基板B’上。在本实施例中，发光元件LED为垂直式发光二极管，发光元件LED具有堆叠的第一连接端E1、半导体层SM1、发光层EL、半导体层SM2以及第二连接端E2。发光元件LED通过粘着层AL固定于基板B’上。在一些实施例中，粘着层AL与基板B’之间具有对位标记MK，对位标记MK可用于转置发光元件LED时，作为瞄准的标记。
至少三个第一连接垫P1分别电性连接对应的发光元件LED的第一连接端E1。第二连接垫P2电性连接三个发光元件LED的第二连接端E2，且各第一连接垫P1与第二连接垫P2相互分隔开来。图11中虽然绘出了三个分离的第二连接垫P2，但实际上电性连接至三个发光元件LED的第二连接端E2互连在一起，也可以说发光元件基板LS的一个第二连接端E2对应了三个发光元件LED。
发光元件基板LS可选择性的还包括三个挡墙D1，各挡墙D1对应且设置于各发光元件LED的至少一部分。各发光元件LED对应的第一连接垫P1的一部分以及各发光元件LED对应的第二连接垫P2的一部分设置于各发光元件LED对应的挡墙的一部分上。在一些实施例中，优选地，挡墙D1环绕发光元件LED，但不限于此。在一些实施例中，优选地，位于挡墙D1的第一连接垫P1以及第二连接垫P2也可作为反射层，使发光元件LED发出的光线更集中。
在本实施例中，挡墙D1上可选择性的还包括绝缘层D2，接垫P1a以及接垫P2a位于绝缘层D2上，且分别电性连接至第一连接垫P1以及第二连接垫P2。在本实施例中，第一连接元件CE1通过接垫P1a电性连接对应的第一连接垫P1。在本实施例中，第二连接元件CE2通过接垫P2a电性连接对应的第二连接垫P2。
多个第一连接元件CE1分别电性连接于对应的一个第一导电接垫CP1至对应的一个第一连接垫P1。多个第二连接元件CE2分别电性连接对应的一个第二导电接垫CP2至对应的一个第二连接垫P2。于一实施例中，挡墙D1是往载板110内表面延伸，可使得第一连接垫P1的一部分与第二连接垫P2的一部分较接近于第一导电接垫CP1以及第二导电接垫CP2或者是接垫P1a以及接垫P2a较接近于第一导电接垫CP1与第二导电接垫CP2，可减少第一连接元件CE1与第二连接元件CE2使用量。更甚而，可让不同基板上的第一连接垫P1较容易经由第一连接元件CE1接触第一导电接垫CP1，且第二连接垫P2较容易经由第二连接元件CE2接触第二导电接垫CP2，以改善连接稳定性。
各发光元件基板LS上可选择性的还包括三个第二色彩转换元件X2。第二色彩转换元件X2位于三个发光元件LED以及三个第一色彩转换元件X1之间。在一些实施例中，第一色彩转换元件X1可以包括红色滤光元件、绿色滤光元件及蓝色滤光元件，且不同颜色的滤光元件可分别对应不同的发光元件LED设置。在一些实施例中，第二色彩转换元件X2可以包括红色量子点材料、绿色量子点材料及蓝色量子点材料，且不同颜色的量子点材料可分别对应不同的发光元件LED设置。在本实施例中，发光元件LED的发光方向朝向阵列基板AS。于一实施例中，显示装置可选择性的还包含位于发光元件LED的发光方向上的偏光板PL。举例而言，偏光板PL位于载板110的外表面，但不限于此。因此，使用者是观看载板110的外表面或偏光板PL外表面，而不是观看基板B’的外表面，此时载板110的外表面或偏光板PL外表面可视为显示面。
图12是依照本发明的一实施例的一种显示装置的局部剖面示意图。在此必须说明的是，图12的实施例沿用图11的实施例的元件标号与部分内容，其中采用相同或近似的标号来表示相同或近似的元件，并且省略了相同技术内容的说明。关于省略部分的说明可参考前述实施例，在此不赘述。
图12的实施例与图11的实施例的主要差异在于发光元件基板LS的发光元件LED不同。
请参考图12，在本实施例中，发光元件LED为水平式发光二极管，发光元件LED的第一连接端E1以及第二连接端E2朝向基板B’。在本实施例中，发光元件LED具有堆叠的半导体层SM1、发光层EL以及半导体层SM2。发光元件LED表面具有绝缘层IL，绝缘层IL暴露出部分半导体层SM1以及半导体层SM2第一连接端E1以及第二连接端E2分别电性连接至半导体层SM1以及半导体层SM2。
在本实施例中，发光元件LED通过粘着层AL固定于基板B’上，粘着层AL例如为异方性导电胶，且能传导流通方向垂直于基板B’法线方向的电流。在本实施例中，发光元件LED的第一连接端E1以及第二连接端E2通过粘着层AL电性连接至对位标记MK，再通过对位标记MK而分别电性连接至第一连接垫P1以及第二连接垫P2。
再者，前述实施例中，驱动元件T1、切换元件T2与其它主动元件其中至少一者可采用薄膜晶体管(TFT)，例如底闸型晶体管、顶闸型晶体管、立体型晶体管、或其它合适的晶体管。底闸型的晶体管的栅极位于半导体层的下方，顶闸型晶体管的栅极位于半导体层的上方，而立体型晶体管的半导体层通道延伸非位于一平面。半导体层可为单层或多层结构，且其材料包含非晶硅、微晶硅、纳米晶硅、多晶硅、单晶硅、有机半导体材料、氧化物半导体材料、纳米碳管/杆、钙钛矿材料、或其它合适的材料或前述的组合。前述实施例中，偏光板PL可为一般偏光膜、多个实质上平行的栅状结构、或其它合适结构的偏光板。
综上所述，由于发光元件是位于发光元件基板中，可以直接选择将发光元件在转置过程后有正确对位的发光元件基板电性连接至阵列基板。即使发光元件在转置过程后没有正确对位，顶多需要对发光元件基板进行重工。因此，相较于直接利用巨量转移技术将发光元件转置于阵列基板上，显示装置可以有较高的生产良率。
虽然本发明已以实施例公开如上，然其并非用以限定本发明，任何所属技术领域中技术人员，在不脱离本发明的构思和范围内，当可作些许的变动与润饰，故本发明的保护范围当视权利要求所界定者为准。

Claims (17)

1.一种显示装置，包括：
一阵列基板，包括：
一载板；
一主动元件层，位于该载板上，且包括两个像素电路、一第一电源线与一第二电源线，其中各该像素电路包括：
至少三个子像素电路，每个子像素电路包含一驱动元件、一切换元件及一信号线，且该驱动元件具有一第一端、一第二端与一控制端，该驱动元件的该控制端电性连接于该信号线及该切换元件，且该驱动元件的该第一端电性连接于该第一电源线；
至少三个第一导电接垫，各该第一导电接垫对应且电性连接于各该驱动元件的该第二端；以及
一第二导电接垫，电性连接该第二电源线；
至少两个发光元件基板，分别电性连接于对应的一个该像素电路，各该发光元件基板包括：
一基板；
至少三个发光元件，位于该基板上，且分别具有一第一连接端以及一第二连接端；
至少三个第一连接垫，分别电性连接对应的一个该发光元件的该第一连接端；以及
一第二连接垫，电性连接该至少三个发光元件的该第二连接端，且各该第一连接垫与该第二连接垫相互分隔开来；
多个第一连接元件，分别电性连接对应的一个该第一导电接垫至对应的一个该第一连接垫；以及
多个第二连接元件，分别电性连接对应的一个该第二导电接垫至对应的一个该第二连接垫。
2.如权利要求1所述的显示装置，其中该至少两个发光元件基板不包括主动元件。
3.如权利要求1所述的显示装置，其中各该发光元件的该第一连接端以及该第二连接端朝向对应的该基板。
4.如权利要求1所述的显示装置，其中各该发光元件的该第一连接端以及该第二连接端朝向该阵列基板。
5.如权利要求1所述的显示装置，其中各该发光元件的该第一连接端与该第二连接端中的一者朝向对应的该基板，且各该发光元件的该第一连接端与该第二连接端中的另一者朝向该阵列基板。
6.如权利要求1所述的显示装置，其中该至少两个发光元件基板之间具有一空隙。
7.如权利要求6所述的显示装置，还包括一遮光层，设置于该至少两个发光元件基板上且遮蔽该空隙，其中该遮光层具有多个开口分别暴露出该至少两个发光元件基板的该至少三个发光元件。
8.如权利要求1所述的显示装置，其中该主动元件层包括对应各该发光元件的一光穿透区。
9.如权利要求1所述的显示装置，还包括一偏光板，位于该载板上，且该至少三个发光元件的发光方向朝向该载板。
10.如权利要求1所述的显示装置，其中该阵列基板还包括多个第一色彩转换元件，对应各该发光元件基板的该至少三个发光元件设置，且该至少三个发光元件的发光方向朝向该阵列基板。
11.如权利要求10所述的显示装置，其中各该发光元件基板上还包括多个第二色彩转换元件，位于该至少三个发光元件以及所述第一色彩转换元件之间。
12.如权利要求1所述的显示装置，其中各该发光元件基板还包括三个挡墙，各该挡墙对应且设置于各该发光元件的至少一部分。
13.如权利要求12所述的显示装置，其中各该发光元件对应的该第一连接垫以及各该发光元件对应的该第二连接垫的一部分设置于各该发光元件对应的该挡墙的一部分上。
14.如权利要求1所述的显示装置，还包括一色彩转换元件，位于该至少两个发光元件基板上，且该至少三个发光元件的发光方向朝向各该发光元件基板的该基板。
15.如权利要求1所述的显示装置，其中该第一电源线与该第二电源线的至少其中一者，位于该两个像素电路之间。
16.如权利要求1所述的显示装置，其中该阵列基板还包括一绝缘层，覆盖各该像素电路的该至少三个子像素电路，各该像素电路的该至少三个第一导电接垫分别通过该绝缘层的至少三个第一开口电性连接于对应的一个该驱动元件的该第二端，且各该像素电路的该第二导电接垫通过该绝缘层的一第二开口电性连接于该第二电源线。
17.如权利要求1所述的显示装置，其中两相邻的所述子像素电路之间具有一边界，该至少三个第一导电接垫其中至少一者及/或该第二导电接垫与该边界部分重叠。
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