CN109119397A - A kind of ultrathin type stamp-mounting-paper diode frame - Google Patents

A kind of ultrathin type stamp-mounting-paper diode frame Download PDF

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Publication number
CN109119397A
CN109119397A CN201811241276.3A CN201811241276A CN109119397A CN 109119397 A CN109119397 A CN 109119397A CN 201811241276 A CN201811241276 A CN 201811241276A CN 109119397 A CN109119397 A CN 109119397A
Authority
CN
China
Prior art keywords
chassis base
frame
mounting
plate body
stamp
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
CN201811241276.3A
Other languages
Chinese (zh)
Inventor
陈明
李晓慧
孙吉
赵国平
李春荣
王毅
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Yangzhou Yangjie Electronic Co Ltd
Original Assignee
Yangzhou Yangjie Electronic Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Yangzhou Yangjie Electronic Co Ltd filed Critical Yangzhou Yangjie Electronic Co Ltd
Priority to CN201811241276.3A priority Critical patent/CN109119397A/en
Publication of CN109119397A publication Critical patent/CN109119397A/en
Withdrawn legal-status Critical Current

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Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • H01L23/49503Lead-frames or other flat leads characterised by the die pad
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • H01L23/49517Additional leads
    • H01L23/4952Additional leads the additional leads being a bump or a wire
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • H01L23/49517Additional leads
    • H01L23/49524Additional leads the additional leads being a tape carrier or flat leads
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L23/00Details of semiconductor or other solid state devices
    • H01L23/48Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
    • H01L23/488Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
    • H01L23/495Lead-frames or other flat leads
    • H01L23/49541Geometry of the lead-frame
    • H01L23/49548Cross section geometry
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/34Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
    • H01L2224/39Structure, shape, material or disposition of the strap connectors after the connecting process
    • H01L2224/40Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
    • H01L2224/401Disposition
    • H01L2224/40151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/40221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/40245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93Batch processes
    • H01L2224/95Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
    • H01L2224/97Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting

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  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Geometry (AREA)
  • Wire Processing (AREA)

Abstract

A kind of ultrathin type stamp-mounting-paper diode frame.It is related to photovoltaic art more particularly to a kind of ultrathin stamp-mounting-paper diode frame.It is simple to provide a kind of structure, facilitates processing, connects reliable ultrathin stamp-mounting-paper diode frame.Including chassis base and frame pin, the chassis base is identical with the thickness of frame pin, spacing is equipped between the chassis base and frame pin, the inside of the chassis base is the settlement for chip placement, the frame pin in " mountain " font, including plate body and three pins being located on the outside of plate body, the plate body is towards chip placing area;The plate body is connected with the chip on settlement by wire jumper.This invention ensures that the effect of welding, is less prone to rosin joint phenomenon, improves product quality.

Description

A kind of ultrathin type stamp-mounting-paper diode frame
Technical field
The present invention relates to photovoltaic art more particularly to a kind of ultrathin stamp-mounting-paper diode frames.
Background technique
With greatly developing for photovoltaic diode, the type of terminal box also becomes more and more, along with the limitation of cost, So that people are also increasingly stringenter the performance requirement of diode.Traditional product is mainly made by axial direction and TO-263 series of products With since the thickness of product ontology limits, the cost of terminal box, which is reduced, certain inhibition, becomes this field skill Art personnel technical problem urgently to be resolved.
State Intellectual Property Office is CN105227129B, entitled " high thermal conductivity in the notification number of 2017.11.28 days bulletins Patch bypass " diode, bonding area is big, has better heat dissipation performance, improves service life.However, its exist with Lower problem: a, frame patch form step integral structure by thin slice and sheet, and work in-process, punching press difficulty is big, at high cost;b, As shown in figure 5, wire jumper welding is welded using 3 point contacts, is easily deformed, not easily-controllable since its pin (i.e. three foot wire jumpers 7) separates Flatness processed, in this way, being wherein easy to appear rosin joint, technique controlling difficulty is big.
Summary of the invention
The present invention facilitates processing, the reliable ultrathin type patch two of connection in view of the above problems, to provide a kind of structure simple Pole pipe frame.
The technical scheme is that including chassis base and frame pin, the thickness of the chassis base and frame pin It spends identical, spacing is equipped between the chassis base and frame pin, the inside of the chassis base is for chip placement Settlement, the frame pin in " mountain " font, including plate body and three pins being located on the outside of plate body, the plate body is towards core Piece settlement;
The plate body is connected with the chip on settlement by wire jumper.
The thickness of the chassis base is lower than 0.4mm.
The chassis base is equipped with a pair and crosses glue hole.
The chassis base and frame pin are copper.
The wire jumper is aluminium strip.
The present invention at work, the thickness of chassis base is carried out thinned, keeps it identical with the thickness of frame pin, convenient Processing, ensure that the flatness of frame;Meanwhile frame pin being separately provided, frame pin and chassis base interval are arranged, and lead to Aluminium strip welded connecting is crossed, in this way, only need to can realize connection by two-point contact, the effect of welding is ensure that, is less prone to void Phenomenon is welded, product quality is improved.
Detailed description of the invention
Fig. 1 is structural schematic diagram of the invention,
Fig. 2 is the package structure diagram of Fig. 1,
Fig. 3 is the schematic diagram of internal structure of Fig. 1,
Fig. 4 is the structural schematic diagram of the double frame of copper strips,
Fig. 5 is the structural schematic diagram of the prior art;
1 is chassis base in figure, and 10 be settlement, and 2 be frame pin, and 21 be ontology, and 22 be pin, and 3 be chip, and 4 be wire jumper, 5 be glue hole, and 6 be plastic-sealed body, and 7 be three foot wire jumpers.
Specific embodiment
The present invention as shown in Figure 1-3, include chassis base 1 and frame pin 2, the thickness of the chassis base and frame pin It spends identical, spacing is equipped between the chassis base and frame pin, the inside of the chassis base is for chip placement 3 Settlement 10, the frame pin are in " mountain " font, including plate body 21 and three pins 22 being located on the outside of plate body, the plate body Towards chip placing area 10;
Chip on the plate body and settlement is connected by wire jumper 4.
The present invention at work, the thickness of chassis base is carried out thinned, keeps it identical with the thickness of frame pin, convenient Processing, ensure that the flatness of frame;Meanwhile frame pin being separately provided, frame pin and chassis base interval are arranged, and lead to Aluminium strip welded connecting is crossed, in this way, only need to can realize connection by two-point contact, the effect of welding is ensure that, is less prone to void Phenomenon is welded, product quality is improved.
Frame pin is arranged to plate body and three pins are integrally formed, facilitates processing;Meanwhile it only need to be by aluminium strip connecting plate Body facilitates processing.Three pins are connected, and keep same plane, weld easily controllable.Finally, passing through plastic-sealed body 6 for frame Bottom plate and frame pin carry out plastic packaging.
The thickness of the chassis base 1 is lower than 0.4mm.It is carried out by the thickness to chassis base thinned, reduces cost, just In processing.In this way, chassis base and frame pin can facilitate processing by copper strips punch forming.
The chassis base is equipped with a pair and crosses glue hole 5.In this way, the bond strength of reinforced frame bottom plate and plastic packaging material, even It connects reliably, improves service life.
The chassis base and frame pin be it is copper, convenient for by copper strips punch forming, processing is simple, guarantee that frame is whole Body flatness.
The wire jumper 4 is aluminium strip, facilitates processing, at low cost.
As shown in figure 4, processing is simple with normal copper strips punch forming after being thinned, guarantee frame flatness.Double life Production efficiency is double, and material/equipment overhead cost is low.

Claims (5)

1. a kind of ultrathin type stamp-mounting-paper diode frame, which is characterized in that including chassis base and frame pin, the framework bottom Plate is identical with the thickness of frame pin, and spacing, the inside of the chassis base are equipped between the chassis base and frame pin For the settlement for chip placement, the frame pin is drawn in " mountain " font, including plate body and be located on the outside of plate body three Foot, the plate body is towards chip placing area;
The plate body is connected with the chip on settlement by wire jumper.
2. a kind of ultrathin stamp-mounting-paper diode frame according to claim 1, which is characterized in that the chassis base Thickness is lower than 0.4mm.
3. a kind of ultrathin stamp-mounting-paper diode frame according to claim 1, which is characterized in that on the chassis base Glue hole is crossed equipped with a pair.
4. a kind of ultrathin stamp-mounting-paper diode frame according to claim 1, which is characterized in that the chassis base and Frame pin is copper.
5. a kind of ultrathin stamp-mounting-paper diode frame according to claim 1, which is characterized in that the wire jumper is aluminium Band.
CN201811241276.3A 2018-10-24 2018-10-24 A kind of ultrathin type stamp-mounting-paper diode frame Withdrawn CN109119397A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201811241276.3A CN109119397A (en) 2018-10-24 2018-10-24 A kind of ultrathin type stamp-mounting-paper diode frame

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201811241276.3A CN109119397A (en) 2018-10-24 2018-10-24 A kind of ultrathin type stamp-mounting-paper diode frame

Publications (1)

Publication Number Publication Date
CN109119397A true CN109119397A (en) 2019-01-01

Family

ID=64855530

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201811241276.3A Withdrawn CN109119397A (en) 2018-10-24 2018-10-24 A kind of ultrathin type stamp-mounting-paper diode frame

Country Status (1)

Country Link
CN (1) CN109119397A (en)

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080111219A1 (en) * 2006-11-14 2008-05-15 Gem Services, Inc. Package designs for vertical conduction die
US20100052141A1 (en) * 2008-09-01 2010-03-04 Cambridge Silicon Radio Ltd. Qfn package
CN102629599A (en) * 2012-04-06 2012-08-08 天水华天科技股份有限公司 Quad flat no lead package and production method thereof
CN103887407A (en) * 2014-03-19 2014-06-25 浙江古越龙山电子科技发展有限公司 Miniature SMD light emitting diode and production process thereof
US20150325559A1 (en) * 2014-05-09 2015-11-12 Alpha And Omega Semiconductor Incorporated Embedded package and method thereof
CN106783793A (en) * 2017-03-24 2017-05-31 王刚 A kind of leads of semiconductor device framework of use TO types encapsulation
CN207183282U (en) * 2017-07-28 2018-04-03 阳信金鑫电子有限公司 A kind of high current mounts diode package structure
CN208796989U (en) * 2018-10-24 2019-04-26 扬州扬杰电子科技股份有限公司 Ultrathin stamp-mounting-paper diode frame

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080111219A1 (en) * 2006-11-14 2008-05-15 Gem Services, Inc. Package designs for vertical conduction die
US20100052141A1 (en) * 2008-09-01 2010-03-04 Cambridge Silicon Radio Ltd. Qfn package
CN102629599A (en) * 2012-04-06 2012-08-08 天水华天科技股份有限公司 Quad flat no lead package and production method thereof
US20150102476A1 (en) * 2012-04-06 2015-04-16 Huatian Technology (Xi'an) Co., Ltd. Quad flat no lead package and production method thereof
CN103887407A (en) * 2014-03-19 2014-06-25 浙江古越龙山电子科技发展有限公司 Miniature SMD light emitting diode and production process thereof
US20150325559A1 (en) * 2014-05-09 2015-11-12 Alpha And Omega Semiconductor Incorporated Embedded package and method thereof
CN106783793A (en) * 2017-03-24 2017-05-31 王刚 A kind of leads of semiconductor device framework of use TO types encapsulation
CN207183282U (en) * 2017-07-28 2018-04-03 阳信金鑫电子有限公司 A kind of high current mounts diode package structure
CN208796989U (en) * 2018-10-24 2019-04-26 扬州扬杰电子科技股份有限公司 Ultrathin stamp-mounting-paper diode frame

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Application publication date: 20190101