CN202855732U - MOSFET pipe leading wire framework welded by utilizing triode wire welding machine - Google Patents
MOSFET pipe leading wire framework welded by utilizing triode wire welding machine Download PDFInfo
- Publication number
- CN202855732U CN202855732U CN 201220541600 CN201220541600U CN202855732U CN 202855732 U CN202855732 U CN 202855732U CN 201220541600 CN201220541600 CN 201220541600 CN 201220541600 U CN201220541600 U CN 201220541600U CN 202855732 U CN202855732 U CN 202855732U
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- pin
- mosfet pipe
- lead frame
- mosfet
- triode
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- Expired - Fee Related
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Lead Frames For Integrated Circuits (AREA)
Abstract
The utility model aims to solve a technical problem of providing a MOSFET pipe leading wire framework welded by utilizing a triode wire welding machine. Waste and old utilization reduces equipment investment of an enterprise. The leading wire framework is formed by connecting base-island base pin units having sixteen MOSFET tubes with connection strips perpendicular to the base pins, all the base-island base pin units are arranged on a same plane, a unit gap which is convenient for cutting is arranged between each two adjacent base-island base pin units, front ends of grid pins, source pins and drain pins are connected with a welding positioning plate. Compared with the prior art, according to the MOSFET pipe leading wire framework, dimensional structure of a leading wire framework is improved, so an enterprise can realize large power MOSFET tube welding wire processing by utilizing original wire welding equipment used for manufacturing triodes, and thereby equipment investment is saved, a utilization rate of the original equipment is improved, and employee enthusiasm of autonomous innovation is encouraged.
Description
Technical field
The utility model relates to a kind of lead frame of MOSFET pipe, particularly a kind of lead frame for the manufacture of the MOSFET pipe that can weld at the triode bonding equipment.
Background technology
In recent years, develop rapidly along with science and technology, having the English full name Metal of the high MOSFET(of high power conversion efficient Oxide Semiconductor Field Effect Transistor, Chinese isolated gate FET by name) device just more and more is widely used in the fields such as automobile, toy, electricity-saving lamp and various power supply changeover devices.
Switching Power Supply part is except adopting PFC(to claim again the power factor correction switch circuit in high definition of today, liquid crystal, the plasma TV) the technology, selecting of components and parts, used switching tube all adopts the MOSFET pipe of excellent performance to replace High-power Semiconductor Triode in the past, thereby efficient, reliability, the failure rate of complete machine are all significantly descended, also therefore, the occupation rate of market of MOSFET pipe is also increasing.
The brief introduction of MOSFET pipe structure:
1, the structure of MOSFET die
On the lower P type semiconductor silicon substrate of doping content, the N+ district that makes two high-dopant concentrations with semiconductor lithography, diffusion technology, and draw two electrodes with metallic aluminium, respectively as draining and source electrode.Then the very thin silicon dioxide insulating layer film of the topped one deck in surface of the P type semiconductor between drain electrode and source electrode is loaded onto an aluminium electrode at this insulating layer film, again as grid.This has just consisted of a N raceway groove (NPN type) enhancement mode MOSFET pipe.Obviously insulate between its grid and other electrode.
2, lead frame
By Ji Dao and grid pin, drain pin and source electrode pin consist of, during production, will be through the good said chip of cutting processing, on bonding equipment, use the good electric conducting material (such as elargol or scolding tin material etc.) of thermal conductivity with as described in chips welding on the basic island of lead frame, again chip is passed through plain conductor (such as aluminum steel, gold thread or copper cash) be weldingly connected with described grid pin and source electrode pin respectively, and then the plastic packaging material adhesive body is filled in around chip and the lead frame in the pressing mold mode (usually adopts the plastic packaging material with certain thermal conductivity), follow the formed product good to plastic packaging, remove unnecessary carrier part, parameter is qualified after tested gets final product.
Although MOSFET pipe and High-power Semiconductor Triode have some similarities in manufacturing process, but because there is essential difference in it aspect structure, the characteristic, thereby in the prior art, the professional bonding equipment equipment of again purchasing or introducing is all used in the production of the MOSFET pipe especially welding of MOSFET pipe Ji Dao, chip and each utmost point pin (grid, drain electrode and source electrode), so, greatly improved the cost of investment of enterprise.
Summary of the invention
The technical problems to be solved in the utility model provides a kind ofly can weld lead frame for the manufacture of the MOSFET pipe at the triode bonding equipment, and thus, waste and old utilization has reduced the business equipment investment.
In order to solve the problems of the technologies described above, the technical solution adopted in the utility model is:
The lead frame of the MOSFET pipe of available triode bonding equipment welding of the present utility model, this lead frame is by being formed by connecting with the perpendicular intercell connector of its pin by the basic island pin unit of 16 MOSFET pipes, all basic island pin unit are set up in parallel in same plane, be provided with the cell gap of being convenient to cut between every two adjacent basic island pin unit, the front end of the grid pin of basic island pin unit, source electrode pin and drain electrode pin links to each other with the welding location-plate.
Described basic island pin unit is made of Ji Dao and the grid pin that is parallel to each other, source electrode pin and drain electrode pin, and wherein, the inner end of drain electrode pin is connected with the limit of Ji Dao, and grid pin and source electrode pin are divided into the both sides of drain electrode pin, leave the pin gap therebetween.
Described cell gap is between 2.5mm to 3.5mm.
Described basic island width is 7.5mm to 8.0mm.
Described location-plate is provided with the flash ranging location hole.
Compared with prior art, the utility model is owing to improve the physical dimension of lead frame, so that enterprise carries out the processing of high-power MOSFET tube bonding wire at the used bonding equipment equipment of original manufacturing triode, both saved equipment investment, improve again the utilance of existing equipment, also encouraged the enthusiasm of employee's autonomous innovation.
Description of drawings
The utility model is described in further detail below in conjunction with the drawings and specific embodiments.
Fig. 1 is configuration diagram of the present utility model.
The Figure of description mark is as follows:
Base island pin unit 1, basic island 11, intercell connector 2, location-plate 3, location hole 31, cell gap a, basic island width b, grid pin G, source electrode pin S, drain electrode pin D.
Embodiment
As shown in Figure 1, the lead frame of the MOSFET pipe of available triode bonding equipment welding of the present utility model, this lead frame is that the basic island pin unit 1 by 16 MOSFET pipes consists of, each basic island pin unit 1 consists of with parallel each other grid pin G, source electrode pin S and drain electrode pin D by basic island 11, wherein, base island width b is 7.5mm to 8.0mm, the inner end of drain electrode pin D (be inner end near basic island one end) is connected with a limit on basic island 11, grid pin G and source electrode pin S are divided into the both sides of drain electrode pin D, leave the pin gap therebetween.
The basic island pin unit 1 of each MOSFET pipe be connected to one with the perpendicular intercell connector 2 of each pin on, all basic island pin unit 1 are set up in parallel in same plane, be provided with cell gap a between every two adjacent basic island pin unit 1, each cell gap a is between 2.5mm to 3.5mm, this cell gap a both had been convenient to lead frame automatic welding on the triode bonding equipment and had been moved when walking and the welding gun accurate contraposition, after being convenient to again machine, be separated into the simple grain finished product with cutting machine.
In order to be beneficial to the automation mechanized operation of welding, the front end of grid pin G, the source electrode pin S of base island pin unit 1 and drain electrode pin D links to each other with welding location-plate 3, be provided with flash ranging location hole 31 at this location-plate 3, flash ranging positioner on the triode bonding equipment according to this location hole 31 both can be like clockwork with the positions of chips welding in basic island 11 surface regulations, can will connect wire bonds between the zone of stipulating on the chip and corresponding each pin again.Equally, after to be processed the finishing, location-plate 3 removed namely obtain independently simple grain finished product.
Claims (5)
1. the lead frame of the MOSFET pipe of an available triode bonding equipment welding, it is characterized in that: this lead frame is by being formed by connecting with the perpendicular intercell connector (2) of its pin by the basic island pin unit (1) of 16 MOSFET pipes, all basic island pin unit (1) are set up in parallel in same plane, be provided with the cell gap (a) of being convenient to cut between every adjacent two basic island pin unit (1), the front end of the grid pin (G) of basic island pin unit (1), source electrode pin (S) and drain electrode pin (D) links to each other with welding location-plate (3).
2. the lead frame of the MOSFET pipe of available triode bonding equipment welding according to claim 1, it is characterized in that: described basic island pin unit (1) is made of Ji Dao (11) and the grid pin (G) that is parallel to each other, source electrode pin (S) and drain electrode pin (D), wherein, the inner end of drain electrode pin (D) is connected with the limit of Ji Dao (11), grid pin (G) and source electrode pin (S) are divided into the both sides of drain electrode pin (D), leave the pin gap therebetween.
3. the lead frame of the MOSFET pipe of available triode bonding equipment welding according to claim 1 and 2, it is characterized in that: described cell gap (a) is between 2.5mm to 3.5mm.
4. the lead frame of the MOSFET pipe of available triode bonding equipment welding according to claim 1 and 2, it is characterized in that: described basic island width (b) is 7.5mm to 8.0mm.
5. the lead frame of the MOSFET pipe of available triode bonding equipment welding according to claim 1 and 2, it is characterized in that: described location-plate (3) is provided with flash ranging location hole (31).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220541600 CN202855732U (en) | 2012-10-22 | 2012-10-22 | MOSFET pipe leading wire framework welded by utilizing triode wire welding machine |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN 201220541600 CN202855732U (en) | 2012-10-22 | 2012-10-22 | MOSFET pipe leading wire framework welded by utilizing triode wire welding machine |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN202855732U true CN202855732U (en) | 2013-04-03 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN 201220541600 Expired - Fee Related CN202855732U (en) | 2012-10-22 | 2012-10-22 | MOSFET pipe leading wire framework welded by utilizing triode wire welding machine |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN202855732U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103531566A (en) * | 2013-10-28 | 2014-01-22 | 沈健 | Lead frame for MOS device |
-
2012
- 2012-10-22 CN CN 201220541600 patent/CN202855732U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103531566A (en) * | 2013-10-28 | 2014-01-22 | 沈健 | Lead frame for MOS device |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20130403 Termination date: 20181022 |