CN103531566A - Lead frame for MOS device - Google Patents
Lead frame for MOS device Download PDFInfo
- Publication number
- CN103531566A CN103531566A CN201310514982.1A CN201310514982A CN103531566A CN 103531566 A CN103531566 A CN 103531566A CN 201310514982 A CN201310514982 A CN 201310514982A CN 103531566 A CN103531566 A CN 103531566A
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- CN
- China
- Prior art keywords
- lead frame
- mos device
- matrix
- pin
- terminal pins
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/0001—Technical content checked by a classifier
- H01L2924/0002—Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00
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- Lead Frames For Integrated Circuits (AREA)
Abstract
The invention discloses a lead frame for an MOS (metal oxide semiconductor) device. The lead frame comprises sixteen lead frame units (1) connected in a single row, wherein the lead frame units are fixedly connected; positioning holes (2) are formed between the lead frame units; the lead frame units comprise radiating fins (3), base bodies (4) and terminal pins; the terminal pins comprise middle terminal pins (5) and side terminal pins (6); the radiating fins (3) are arranged on the base bodies (4); the middle terminal pins (5) are connected with the base bodies (4) through bonding parts (7). The lead frame is suitable for the MOS device and meets the usage requirements in physical and mechanical performance and size.
Description
Technical field
The present invention relates to a kind of lead frame, refer more particularly to the lead frame that a kind of MOS device is used.
Background technology
In recent years, rapidly, particularly the encapsulation amount of discrete device is very large in domestic semiconductor development, but the structure of MOS semiconductor device is special, and the requirement of its lead frame used aspect physics, mechanical performance and size is high especially.Current lead frame on the market also can reach the object to its Plastic Package.
Summary of the invention
The problem to be solved in the present invention is to provide the lead frame that a kind of MOS of being suitable for device is used, and it is reaching the lead frame of instructions for use aspect physics, mechanical performance and size.
For addressing the above problem, the invention provides the lead frame that a kind of MOS device is used, by 16 single connecting to form in lead frame unit, described lead frame is fixedly connected with between unit, and described lead frame is provided with location hole between unit, and described lead frame unit comprises fin, matrix and terminal pin, described terminal pin comprises middle leads pin and side terminal pin, described matrix is provided with fin, and described middle leads pin is connected by bonding part with matrix, and suitably bends.
As the further improvement of invention, the diameter of described location hole is 2mm.
As the further improvement of invention, described middle leads pin is provided with one, and described side terminal pin is provided with two.
As the further improvement of invention, the width of described lead frame unit is 11.37-11.43mm, and the width of described 16 single lead frames that connect to form in lead frame unit is 182.3-182.5mm.
As the further improvement of invention, described matrix is provided with V-shaped groove, the dark 0.1mm of described V-shaped groove around.
Further improvement as invention, is provided with some projections in described matrix, the bottom surface of described projection is square, and the described foursquare length of side is 0.3mm, and the height of described projection is 0.12mm.
As the further improvement of invention, described projection is provided with 25.1.4mm apart between described projection.
The present invention compared with prior art has the following advantages.
1, the lead frame that a kind of MOS device is used, by 16 single connecting to form in lead frame unit, described lead frame is fixedly connected with between unit, described lead frame is provided with location hole between unit, described lead frame unit comprises fin, matrix and terminal pin, described terminal pin comprises middle leads pin and side terminal pin, and described matrix is provided with fin, and described middle leads pin is connected by bonding part with matrix.Structure of the present invention and be arranged so that it meets the requirement of MOS epoxy seal semiconductor device.And it meets instructions for use at physics and mechanical performance.
,the diameter of described location hole is 2mm.The width of described lead frame unit is 11.37-11.43mm, and the width of described 16 single lead frames that connect to form in lead frame unit is 182.3-182.5mm.Described matrix is provided with V-shaped groove, the dark 0.1mm of described V-shaped groove around.In described matrix, be provided with some projections, the bottom surface of described projection is square, and the described foursquare length of side is 0.3mm, and the height of described projection is 0.12mm.Described projection is provided with 25.1.4mm apart between described projection.The requirement of size conforms MOS epoxy seal semiconductor device of the present invention, and simple in structure, be suitable for producing.
Accompanying drawing explanation
Fig. 1 is the structural representation of the lead frame used of MOS device of the present invention.
Fig. 2 is the left view of the lead frame used of MOS device of the present invention.
In figure: 1-lead frame unit, 2-location hole, 3-fin, 4-matrix, 5-middle leads pin, 6-side terminal pin, 7-bonding part.
Embodiment
Below in conjunction with drawings and Examples, the present invention is further explained.
As shown in Fig. 1 and Fig. 2, the lead frame that a kind of MOS device is used, by 16 single connecting to form in lead frame unit 1, the width of lead frame unit 1 is 11.37-11.43mm, and the width of 16 single lead frames that connect to form in lead frame unit 1 is 182.3-182.5mm.Lead frame is fixedly connected with between unit, is provided with location hole 2 between lead frame unit, and the diameter of location hole 2 is 2mm.
Lead frame unit comprises fin 3, matrix 4 and terminal pin, and terminal pin comprises a middle leads pin 5 and two side terminal pins 6, and matrix 4 is provided with fin 3, and middle leads pin 5 is connected by bonding part 7 with matrix 4.
Matrix 4 is provided with V-shaped groove, the dark 0.1mm of V-shaped groove around.In matrix, be provided with some projections, the bottom surface of projection is square, and the foursquare length of side is 0.3mm, and the height of projection is 0.12mm.Projection is provided with 25.1.4mm apart between projection.
Whole framework adopts copper strips through punching press, surface treatment, cut-out, to be shaped and to make successively.
Teachings herein is example of the present invention and explanation; but do not mean that the obtainable advantage of the present invention is so limited, may be to wherein one or more of the advantage realizing in the simple transformation of structure and/or some execution modes all in the application's protection range in every practice process of the present invention.
Claims (7)
1. the lead frame that MOS device is used, it is characterized in that: by single the connecting to form in 16 lead frame unit (1), described lead frame is fixedly connected with between unit, between described lead frame unit, be provided with location hole (2), described lead frame unit comprises fin (3), matrix (4) and terminal pin, described terminal pin comprises middle leads pin (5) and side terminal pin (6), described matrix (4) is provided with fin (3), and described middle leads pin (5) is connected by bonding part (7) with matrix (4).
2. the lead frame that MOS device according to claim 1 is used, is characterized in that: the diameter of described location hole (2) is 2mm.
3. the lead frame that MOS device according to claim 1 is used, is characterized in that: described middle leads pin (5) is provided with one, and described side terminal pin (5) is provided with two.
4. the lead frame that MOS device according to claim 1 is used, it is characterized in that: the width of described lead frame unit (1) is 11.37-11.43mm, the width of the single lead frame connecting to form in described 16 lead frame unit (1) is 182.3-182.5mm.
5. the lead frame that MOS device according to claim 1 is used, is characterized in that: described matrix (4) is provided with V-shaped groove around, the dark 0.1mm of described V-shaped groove.
6. the lead frame that MOS device according to claim 1 is used, is characterized in that: in described matrix, be provided with some projections, the bottom surface of described projection is square, and the described foursquare length of side is 0.3mm, and the height of described projection is 0.12mm.
7. the lead frame that MOS device according to claim 6 is used, is characterized in that: described projection is provided with 25, the 1.4mm apart between described projection.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310514982.1A CN103531566A (en) | 2013-10-28 | 2013-10-28 | Lead frame for MOS device |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310514982.1A CN103531566A (en) | 2013-10-28 | 2013-10-28 | Lead frame for MOS device |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103531566A true CN103531566A (en) | 2014-01-22 |
Family
ID=49933451
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310514982.1A Pending CN103531566A (en) | 2013-10-28 | 2013-10-28 | Lead frame for MOS device |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103531566A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103928425A (en) * | 2014-03-27 | 2014-07-16 | 张轩 | Lead frame with indentations |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2893922Y (en) * | 2006-04-19 | 2007-04-25 | 宁波康强电子股份有限公司 | Improved large-power lead wire frame |
| EP2244396A2 (en) * | 2009-04-23 | 2010-10-27 | Omron Corporation | Optocoupler |
| CN202855732U (en) * | 2012-10-22 | 2013-04-03 | 深圳市贵鸿达电子有限公司 | MOSFET pipe leading wire framework welded by utilizing triode wire welding machine |
-
2013
- 2013-10-28 CN CN201310514982.1A patent/CN103531566A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN2893922Y (en) * | 2006-04-19 | 2007-04-25 | 宁波康强电子股份有限公司 | Improved large-power lead wire frame |
| EP2244396A2 (en) * | 2009-04-23 | 2010-10-27 | Omron Corporation | Optocoupler |
| CN202855732U (en) * | 2012-10-22 | 2013-04-03 | 深圳市贵鸿达电子有限公司 | MOSFET pipe leading wire framework welded by utilizing triode wire welding machine |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103928425A (en) * | 2014-03-27 | 2014-07-16 | 张轩 | Lead frame with indentations |
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| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C02 | Deemed withdrawal of patent application after publication (patent law 2001) | ||
| WD01 | Invention patent application deemed withdrawn after publication |
Application publication date: 20140122 |