CN201450004U - Six-lead high density integrated circuit frame - Google Patents

Six-lead high density integrated circuit frame Download PDF

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Publication number
CN201450004U
CN201450004U CN 200920045405 CN200920045405U CN201450004U CN 201450004 U CN201450004 U CN 201450004U CN 200920045405 CN200920045405 CN 200920045405 CN 200920045405 U CN200920045405 U CN 200920045405U CN 201450004 U CN201450004 U CN 201450004U
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CN
China
Prior art keywords
pin
closed frame
integrated circuit
dao
high density
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN 200920045405
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Chinese (zh)
Inventor
张轩
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Taizhou Yourun Electronic Co Ltd
Original Assignee
Taizhou Yourun Electronic Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Taizhou Yourun Electronic Co Ltd filed Critical Taizhou Yourun Electronic Co Ltd
Priority to CN 200920045405 priority Critical patent/CN201450004U/en
Application granted granted Critical
Publication of CN201450004U publication Critical patent/CN201450004U/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/0001Technical content checked by a classifier
    • H01L2924/0002Not covered by any one of groups H01L24/00, H01L24/00 and H01L2224/00

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  • Lead Frames For Integrated Circuits (AREA)

Abstract

The utility model relates to a six-lead high density integrated circuit frame, which comprises side bands at an upper side and a lower side connected with multi-groups of closed frames in six longitudinal rows, two pin groups arranged in parallel are arranged in the closed frame; each pin group comprises two side pins and one middle pin; the end tails of the two side pins are connected on an upper horizontal connection bar on the closed frame; the end tail of the middle pin is connected with a lower horizontal connection bar on the closed frame; the end head of the middle pin is connected with a base island; and the end heads of the two side pins are respectively positioned at both sides of the base island. The utility model has compact structure, higher density and precision and large area of the base island, enables a welded chip to bear high breakdown voltage, improves the power of the device, arranges at least six rows of lead frames in an equal unit area, and can meet the demand of encapsulation of microminiature discrete devices and large scale integrated circuits.

Description

Six lead-in wire high density integrated circuit frameworks
Technical field
The utility model relates to a kind of electronic device, particularly a kind of precision, the demanding six lead-in wire high density integrated circuit frameworks of coating.
Background technology
After striding into 21st century, the development of electronics, digital product is maked rapid progress, and the performance requirement of corresponding supporting with it electronic device circuit frame is more and more higher.The circuit frame that tradition is used vertically has only a row closed frame, and when using a plurality of circuit frame to satisfy high performance requirements, product size must increase, and use cost improves, and has increased the parasitic parameter of interconnecting lead, and the scope of application is more and more narrow, and practicality is low.The chip that carries of existing lead frame mostly adopts rectangular configuration, as the patent No. is 200820153819.1 disclosed a kind of iron-nickel alloy lead frame version parts, its chip island is rectangular, its rectangular area is little, the welding chip area is little, the breakdown potential that can bear is forced down, and causes the power of integral device little, can not satisfy the requirement of microminiature discrete device and large scale integrated circuit encapsulation.
Summary of the invention
The purpose of this utility model solves shortcomings such as lead frame density is low in the prior art, precision is low, the coating requirement is low, and provides a kind of high-compactness, density, precision property height, the demanding six lead-in wire high density integrated circuit frameworks of coating.
In order to achieve the above object, the technical solution adopted in the utility model is: a kind of six lead-in wire high density integrated circuit frameworks, its technical characterstic connects the closed frame that many groups are vertical six rows by the sideband of both sides up and down and forms, be provided with two groups of pin set that are set up in parallel in the described closed frame, every group of pin set comprises two side pins and a middle pin, the end tail of both sides pin is connected on the last horizontal dowel of closed frame, the end tail of middle pin is connected on the following horizontal dowel of closed frame, the termination of middle pin connects a Ji Dao, the termination of both sides pin lays respectively at the both sides of Ji Dao, and separate with basic island dual-side the termination of both sides pin.Adopt vertical six rows' closed frame built-up circuit framework, be equipped with two groups of pin set in the closed frame, improve the density of circuit frame, reached high density, high-precision performance requirement, satisfied the requirement of microminiature discrete device and large scale integrated circuit encapsulation fully.
Described Ji Dao is angle, a rectangular slab two lower end disjunctor two little flap plates, the flap plate be positioned at the both sides pin the termination under; Be equipped with coating on the rectangular slab of pin termination, described both sides, Ji Dao, the two flap plates.The area of Ji Dao increases, and the welding chip area is big, the puncture voltage height that can bear, and the power of device improves.
The utility model adopts the closed frame built-up circuit framework that vertically is provided with six rows, is provided with two groups of pin set in each closed frame, and the middle pin of every group of pin set all is connected with Ji Dao.This product with compact structure, density are higher, and precision is higher, can be widely used in miniaturization, integrated, electronic device efficiently.
Description of drawings
Fig. 1 structural representation of the present utility model;
The structural representation of the every row's closed frame of Fig. 2 the utility model.
Among the figure: sideband 1, horizontal dowel 2, vertical dowel 3, closed frame 4, middle pin 5, side pin 6, basic island 7, rectangular slab 71, flap plate 72, coating 8.
Embodiment
The utility model is described in further detail below in conjunction with drawings and Examples.
Six lead-in wire high density integrated circuit frameworks mainly comprise sideband 1, horizontal dowel 2, vertical dowel 3, middle pin 5, side pin 6, basic island 7 shown in Fig. 1,2.Laterally dowel 2 connects to form closed frame 4 with vertical dowel 3 square crossings, the closed frame 4 that many groups are vertical six rows is connected in two sidebands 1 up and down through vertical dowel 3, be provided with two groups of pin set that are set up in parallel in the closed frame 4, every group of pin set comprises two side pins 6 and a middle pin 5, the end tail of both sides pin 6 is connected on the last horizontal dowel 2 of closed frame 4, the end tail of middle pin 5 is connected on the following horizontal dowel 2 of closed frame 4, the termination of middle pin 5 connects a basic island 7, the termination of both sides pin 6 lays respectively at the both sides on basic island 7, separate with basic island 7 dual-sides the termination of both sides pin 6, base island 7 is a rectangular slab 71, angle, the two lower ends disjunctor two little flap plates 72 of rectangular slab 71, two flap plates 72 lay respectively at both sides pin 6 the termination under, both sides pin 6 terminations, the rectangular slab 71 on base island 7, be equipped with coating 8 on the two flap plates 72.

Claims (3)

1. lead-in wire high density integrated circuit framework, it is characterized in that: connect by the sideband (1) of both sides up and down that many groups are vertical six rows or the above closed frame (4) of six rows is formed, be provided with two groups of pin set that are set up in parallel in the described closed frame (4), every group of pin set comprises two side pins (6) and a middle pin (5), the end tail of two side pins (6) is connected on the last horizontal dowel (2) of closed frame (4), the end tail of middle pin (5) is connected on the following horizontal dowel (2) of closed frame (4), the termination of middle pin (5) connects a Ji Dao (7), the termination of both sides pin (6) lays respectively at the both sides of Ji Dao (7), and separate with Ji Dao (7) dual-side the termination of two side pins (6).
2. six lead-in wire high density integrated circuit frameworks according to claim 1, it is characterized in that: described Ji Dao (7) is angle, a rectangular slab (71) two lower end disjunctor two flap plates (72), flap plate (72) be positioned at two side pins (6) the termination under.
3. six lead-in wire high density integrated circuit frameworks according to claim 2 is characterized in that: be equipped with coating (8) on the two flap plates (72) of the rectangular slab (71) of described two side pins (6) termination, Ji Dao (7), Ji Dao.
CN 200920045405 2009-05-19 2009-05-19 Six-lead high density integrated circuit frame Expired - Fee Related CN201450004U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN 200920045405 CN201450004U (en) 2009-05-19 2009-05-19 Six-lead high density integrated circuit frame

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN 200920045405 CN201450004U (en) 2009-05-19 2009-05-19 Six-lead high density integrated circuit frame

Publications (1)

Publication Number Publication Date
CN201450004U true CN201450004U (en) 2010-05-05

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN 200920045405 Expired - Fee Related CN201450004U (en) 2009-05-19 2009-05-19 Six-lead high density integrated circuit frame

Country Status (1)

Country Link
CN (1) CN201450004U (en)

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102034783A (en) * 2010-10-28 2011-04-27 吴江巨丰电子有限公司 Seven-pin lead frame
CN102969295A (en) * 2012-11-20 2013-03-13 无锡市威海达机械制造有限公司 Lead frame structure
CN105789168A (en) * 2016-05-11 2016-07-20 山东迪电子科技有限公司 Jumper wire frame for chip welding of semiconductor device

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102034783A (en) * 2010-10-28 2011-04-27 吴江巨丰电子有限公司 Seven-pin lead frame
CN102034783B (en) * 2010-10-28 2012-03-28 吴江巨丰电子有限公司 Seven-pin lead frame
CN102969295A (en) * 2012-11-20 2013-03-13 无锡市威海达机械制造有限公司 Lead frame structure
CN105789168A (en) * 2016-05-11 2016-07-20 山东迪电子科技有限公司 Jumper wire frame for chip welding of semiconductor device

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C14 Grant of patent or utility model
GR01 Patent grant
C17 Cessation of patent right
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20100505

Termination date: 20110519