CN103021883A - Flat package part manufacturing process based on corrosion plastic package body - Google Patents
Flat package part manufacturing process based on corrosion plastic package body Download PDFInfo
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- CN103021883A CN103021883A CN2012105232947A CN201210523294A CN103021883A CN 103021883 A CN103021883 A CN 103021883A CN 2012105232947 A CN2012105232947 A CN 2012105232947A CN 201210523294 A CN201210523294 A CN 201210523294A CN 103021883 A CN103021883 A CN 103021883A
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- plastic
- plastic packaging
- corrosion
- sealed body
- flat
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
- H01L2224/732—Location after the connecting process
- H01L2224/73251—Location after the connecting process on different surfaces
- H01L2224/73265—Layer and wire connectors
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
- H01L2224/92—Specific sequence of method steps
- H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
- H01L2224/9222—Sequential connecting processes
- H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
- H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/151—Die mounting substrate
- H01L2924/153—Connection portion
- H01L2924/1531—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface
- H01L2924/15311—Connection portion the connection portion being formed only on the surface of the substrate opposite to the die mounting surface being a ball array, e.g. BGA
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Abstract
The invention relates to a flat package part manufacturing process based on a corrosion plastic package body and belongs to the technical field of integrated circuit package. The flat package part manufacturing process is different from existing plastic package processes. After a groove is formed on a frame by means of a corrosion method, effective drag preventing structures are formed among the frame, a primary plastic package material and a secondary plastic package material by means of a secondary plastic package method, occurrence probability of package part layering is greatly reduced, the product reliability is improved greatly, and the flat package part manufacturing process is superior to transitional AQQFN products in plastic package effect.
Description
Technical field
The present invention relates to a kind of flat packaging part manufacture craft based on the corrosion plastic-sealed body, belong to the integrated antenna package technical field.
Background technology
Integrated circuit is the core of information industry and new and high technology, is the basis of economic development.Integrated antenna package is the chief component of IC industry, and its development is accompanied by the increase of its function and device count always and strides forward.From the nineties in 20th century, it has entered the development track of many number of pins, thin space, small-sized slimming.Carrier-free Background Grid array packages (being AAQFN) is for adapting to the fast-developing a kind of new packing forms that is born of electronic product, is that complete electronic set is realized microminaturization, lightweight, networked requisite product.
Carrier-free Background Grid array packages element, the bottom does not have soldered ball, pin directly is connected with pcb board during welding, with the electric and mechanical connection of PCB be by Printing Paste on the PCB pad, the solder joint that cooperates the SMT reflow soldering process to form is realized.This technology encapsulation can realize many pins, high density, small-sized slimming encapsulation under the same size condition, have the characteristics such as thermal diffusivity, electrical property and coplanarity are good.
The AAQFN encapsulating products is applicable on a large scale, the encapsulation of very lagre scale integrated circuit (VLSIC).The device great majority of AAQFN encapsulation are used for the high-grade consumer goods markets such as mobile phone, network and communications equipment, digital camera, microcomputer, notebook computer and various types of flat panel display.Grasp its core technology, possess mass production capabilities, will greatly dwindle the gap of domestic IC industry and international most advanced level, this product has wide market application foreground.
But because restrictions such as technical difficulty, the at present popularization of AAQFN product on market acquires a certain degree of difficulty, and especially aspect reliability, directly affects use and the life-span of product, become the research of technique difficult point of AAQFN packaging part.
Summary of the invention
The problem that exists in order to overcome above-mentioned prior art, the invention provides a kind of flat packaging part manufacture craft based on the corrosion plastic-sealed body, it is more firm that the integrated circuit framework is combined with plastic-sealed body, be not affected by the external environment, directly improve the package reliability of product, and reduce to a certain extent cost.
The technical solution used in the present invention: a kind of flat packaging part manufacture craft based on the corrosion plastic-sealed body, specifically carry out according to following steps:
The first step, attenuate: thickness thinning is 50 μ m~200 μ m;
Second step, scribing: the above wafer of 150 μ m adopts common Q FN scribing process, and thickness uses double-pole scribing machine and technique thereof at the following wafer of 150 μ m;
The 3rd step, upper core: adopt core on the bonding die glue;
The 4th step, pressure welding;
The 5th step, a plastic packaging: carry out plastic packaging with traditional plastic packaging material;
The 6th step, framework etched recesses: do the part at the framework back side with liquor ferri trichloridi and window and etch partially, the formation groove, severity control is in half of frame thickness;
The 7th step, Reflow Soldering;
The 8th step, secondary plastic packaging: the secondary plastic packaging uses the plastic packaging material of 30 ~ 32um granularity to fill;
The 9th step, corrosion plastic-sealed body: with sulfuric acid and fuming nitric aicd mixed liquor corrosion plastic-sealed body;
The tenth step, rear curing, mill glue, tin, printing, separation of products, check, packing.
The 3rd step can adopt glue film (DAF) to replace bonding die glue in the described step; The 4th step, the 5th step, the 7th step, the tenth go on foot all identical with conventional AAQFN technique in the described step.
Beneficial effect of the present invention: at the method formation groove of framework with corrosion, plastic packaging is that plastic packaging material is filled into groove for the first time, behind the back etched first in the present invention, plant again ball, carry out at last the secondary plastic packaging, can effectively reduce the product integral thickness, the adapt to development demand; Especially for the second time the plastic packaging material of plastic packaging can and the first time plastic packaging plastic packaging material and framework between form more anti-traction structure, significantly improve the reliability of packaging part, and this method goes easily, production efficiency is high.
Description of drawings
Fig. 1 lead frame profile;
Product profile behind the core on Fig. 2;
Product profile after Fig. 3 pressure welding;
Plastic packaged products profile of Fig. 4;
Product profile behind Fig. 5 framework back etched;
Fig. 6 brushes product profile after the tin cream Reflow Soldering;
Fig. 7 secondary plastic packaged products profile;
Fig. 8 corrodes rear product profile;
Fig. 9 finished product section.
Among the figure: 1-lead frame, 2-bonding die glue, 3-chip, 4-bonding line, 5-be plastic-sealed body, 6-etched recesses, 7-tin ball, the 8-plastic-sealed body second time for the first time.
Embodiment
The present invention will be further described below in conjunction with drawings and Examples, understands to make things convenient for the technical staff.
Shown in Fig. 1-9: adopt method of the present invention to be used for single-chip package, product comprises lead frame 1, bonding die glue 2, chip 3, bonding line 4, for the first time plastic-sealed body 5, etched recesses 6, tin ball 7, plastic-sealed body 8 for the second time; Its chips 3 links to each other by bonding die glue 2 with lead frame 1; bonding line 4 is directly got on the lead frame 1 from chip 3; bonding die glue 2 on the lead frame 1; it is chip 3 on the bonding die glue 2; bonding wire between the solder joint on the chip 3 and interior pin is bonding line 4; plastic-sealed body 5 has surrounded lead frame 1 for the first time; bonding die glue 2; chip 3; bonding line 4; etched recesses 6; tin ball 7 has consisted of the integral body of circuit; bonding line 4 and the tin ball 7 of 5 pairs of chips 3 of plastic-sealed body have played support and protective effect, chip 3 for the first time; bonding line 4; lead frame 1 and tin ball 7 have consisted of power supply and the signalling channel of circuit.
A kind of flat packaging part manufacture craft based on the corrosion plastic-sealed body, at the method formation groove of framework with corrosion, plastic packaging is that plastic packaging material is filled into groove for the first time first, behind the back etched, plant again ball, carry out at last the secondary plastic packaging, specifically carry out according to following steps;
The first step, attenuate: thickness thinning is 50 μ m~200 μ m;
Second step, scribing: adopting thickness is the wafer of 100 μ m, uses double-pole scribing machine and technique thereof;
The 3rd step, upper core: adopt core on the bonding die glue 2;
The 4th step, pressure welding: identical with conventional AAQFN technique;
The 5th step, a plastic packaging: carry out plastic packaging with traditional plastic packaging material 9920, identical with conventional AAQFN technique;
The 6th step, framework etched recesses: do the part at the framework back side with liquor ferri trichloridi and window and etch partially, the formation groove, severity control is in half of frame thickness;
The 7th step, Reflow Soldering: identical with conventional AAQFN technique;
The 8th step, secondary plastic packaging: the secondary plastic packaging uses the plastic packaging material of 30um granularity to fill;
The 9th step, corrosion plastic-sealed body: with sulfuric acid and fuming nitric aicd mixed liquor corrosion plastic-sealed body, solution can not react with the tin ball.This method can better be protected the tin ball, improves the encapsulation yield;
The tenth step, rear curing, mill glue, tin, printing, separation of products, check, packing are identical with conventional AAQFN technique.
The first step, attenuate: thickness thinning is 50 μ m~200 μ m;
Second step, scribing: adopting thickness is the wafer of 130 μ m, uses double-pole scribing machine and technique thereof;
The 3rd step, upper core: adopt core on the bonding die glue 2;
The 4th step, pressure welding: identical with conventional AAQFN technique;
The 5th step, a plastic packaging: carry out plastic packaging with traditional plastic packaging material 9920, identical with conventional AAQFN technique;
The 6th step, framework etched recesses: do the part at the framework back side with liquor ferri trichloridi and window and etch partially, the formation groove, severity control is in half of frame thickness;
The 7th step, Reflow Soldering: identical with conventional AAQFN technique;
The 8th step, secondary plastic packaging: the secondary plastic packaging uses the plastic packaging material of 31um granularity to fill;
The 9th step, corrosion plastic-sealed body: with sulfuric acid and fuming nitric aicd mixed liquor corrosion plastic-sealed body, solution can not react with the tin ball.This method can better be protected the tin ball, improves the encapsulation yield;
The tenth step, rear curing, mill glue, tin, printing, separation of products, check, packing are identical with conventional AAQFN technique.
The first step, attenuate: thickness thinning is 50 μ m~200 μ m;
Second step, scribing: adopting thickness is the wafer of 170 μ m, identical with common Q FN scribing process;
The 3rd step, upper core: adopt core on the bonding die glue 2;
The 4th step, pressure welding: identical with conventional AAQFN technique;
The 5th step, a plastic packaging: carry out plastic packaging with traditional plastic packaging material 9920, identical with conventional AAQFN technique;
The 6th step, framework etched recesses: do the part at the framework back side with liquor ferri trichloridi and window and etch partially, the formation groove, severity control is in half of frame thickness;
The 7th step, Reflow Soldering: identical with conventional AAQFN technique;
The 8th step, secondary plastic packaging: the secondary plastic packaging uses the plastic packaging material of 32um granularity to fill;
The 9th step, corrosion plastic-sealed body: with sulfuric acid and fuming nitric aicd mixed liquor corrosion plastic-sealed body, solution can not react with the tin ball.This method can better be protected the tin ball, improves the encapsulation yield;
The tenth step, rear curing, mill glue, tin, printing, separation of products, check, packing are identical with conventional AAQFN technique.
The present invention describes by specific implementation process, without departing from the present invention, can also carry out various conversion and be equal to replacement patent of the present invention, therefore, patent of the present invention is not limited to disclosed specific implementation process, and should comprise the whole embodiments that fall in the Patent right requirement scope of the present invention.
Claims (3)
- One kind based on the corrosion plastic-sealed body flat packaging part manufacture craft, it is characterized in that: specifically carry out according to following steps:The first step, attenuate: thickness thinning is 50 μ m~200 μ m;Second step, scribing: the above wafer of 150 μ m adopts common Q FN scribing process, and thickness uses double-pole scribing machine and technique thereof at the following wafer of 150 μ m;The 3rd step, upper core: adopt core on the bonding die glue;The 4th step, pressure welding;The 5th step, a plastic packaging: carry out plastic packaging with traditional plastic packaging material;The 6th step, framework etched recesses: do the part at the framework back side with liquor ferri trichloridi and window and etch partially, the formation groove, severity control is in half of frame thickness;The 7th step, Reflow Soldering;The 8th step, secondary plastic packaging: the secondary plastic packaging uses the plastic packaging material of 30 ~ 32um granularity to fill;The 9th step, corrosion plastic-sealed body: with sulfuric acid and fuming nitric aicd mixed liquor corrosion plastic-sealed body;The tenth step, rear curing, mill glue, tin, printing, separation of products, check, packing.
- 2. a kind of flat packaging part manufacture craft based on the corrosion plastic-sealed body according to claim 1, it is characterized in that: the 3rd step can adopt glue film (DAF) to replace bonding die glue in the described step.
- According to claim 1 a kind of based on the corrosion plastic-sealed body flat packaging part manufacture craft, it is characterized in that: in the described step the 4th the step, the 5th the step, the 7th the step, the tenth the step all identical with conventional AAQFN technique.
Priority Applications (1)
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CN2012105232947A CN103021883A (en) | 2012-12-09 | 2012-12-09 | Flat package part manufacturing process based on corrosion plastic package body |
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CN2012105232947A CN103021883A (en) | 2012-12-09 | 2012-12-09 | Flat package part manufacturing process based on corrosion plastic package body |
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CN2012105232947A Pending CN103021883A (en) | 2012-12-09 | 2012-12-09 | Flat package part manufacturing process based on corrosion plastic package body |
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Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104037093A (en) * | 2014-05-14 | 2014-09-10 | 华天科技(西安)有限公司 | Package part based on secondary exposure and secondary plastic package of AAQFN and manufacturing process thereof |
CN106784268A (en) * | 2016-11-25 | 2017-05-31 | 安徽巨合电子科技有限公司 | A kind of miniature three-primary color LED and its method for packing without substrate package |
CN111162016A (en) * | 2019-12-27 | 2020-05-15 | 长电科技(宿迁)有限公司 | Packaging method for temporary bonding reinforcement of lead frame |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN101826501A (en) * | 2009-03-06 | 2010-09-08 | 李同乐 | Leadless integrated circuit package having high density contacts |
CN102354691A (en) * | 2011-11-04 | 2012-02-15 | 北京工业大学 | Quad flat non-lead (QFN) package with high density and manufacturing method |
CN102365737A (en) * | 2009-03-30 | 2012-02-29 | 凸版印刷株式会社 | Method of producing substrate for semiconductor element, and semiconductor device |
CN101958300B (en) * | 2010-09-04 | 2012-05-23 | 江苏长电科技股份有限公司 | Double-sided graphic chip inversion module packaging structure and packaging method thereof |
-
2012
- 2012-12-09 CN CN2012105232947A patent/CN103021883A/en active Pending
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101826501A (en) * | 2009-03-06 | 2010-09-08 | 李同乐 | Leadless integrated circuit package having high density contacts |
CN102365737A (en) * | 2009-03-30 | 2012-02-29 | 凸版印刷株式会社 | Method of producing substrate for semiconductor element, and semiconductor device |
CN101958300B (en) * | 2010-09-04 | 2012-05-23 | 江苏长电科技股份有限公司 | Double-sided graphic chip inversion module packaging structure and packaging method thereof |
CN102354691A (en) * | 2011-11-04 | 2012-02-15 | 北京工业大学 | Quad flat non-lead (QFN) package with high density and manufacturing method |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN104037093A (en) * | 2014-05-14 | 2014-09-10 | 华天科技(西安)有限公司 | Package part based on secondary exposure and secondary plastic package of AAQFN and manufacturing process thereof |
CN106784268A (en) * | 2016-11-25 | 2017-05-31 | 安徽巨合电子科技有限公司 | A kind of miniature three-primary color LED and its method for packing without substrate package |
CN106784268B (en) * | 2016-11-25 | 2020-03-31 | 安徽巨合电子科技有限公司 | Miniature substrate-free packaged tricolor LED and packaging method thereof |
CN111162016A (en) * | 2019-12-27 | 2020-05-15 | 长电科技(宿迁)有限公司 | Packaging method for temporary bonding reinforcement of lead frame |
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Application publication date: 20130403 |