CN109148406A - A kind of ultrathin type stamp-mounting-paper diode - Google Patents
A kind of ultrathin type stamp-mounting-paper diode Download PDFInfo
- Publication number
- CN109148406A CN109148406A CN201811241277.8A CN201811241277A CN109148406A CN 109148406 A CN109148406 A CN 109148406A CN 201811241277 A CN201811241277 A CN 201811241277A CN 109148406 A CN109148406 A CN 109148406A
- Authority
- CN
- China
- Prior art keywords
- chassis base
- mounting
- plastic
- stamp
- ultrathin
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
Links
- 239000004411 aluminium Substances 0.000 claims abstract description 20
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims abstract description 20
- 229910052782 aluminium Inorganic materials 0.000 claims abstract description 20
- 239000011248 coating agent Substances 0.000 claims abstract description 4
- 238000000576 coating method Methods 0.000 claims abstract description 4
- 239000003292 glue Substances 0.000 claims description 8
- 238000005538 encapsulation Methods 0.000 claims description 3
- 238000003466 welding Methods 0.000 abstract description 4
- 230000000694 effects Effects 0.000 abstract description 3
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 abstract description 2
- KHPCPRHQVVSZAH-HUOMCSJISA-N Rosin Natural products O(C/C=C/c1ccccc1)[C@H]1[C@H](O)[C@@H](O)[C@@H](O)[C@@H](CO)O1 KHPCPRHQVVSZAH-HUOMCSJISA-N 0.000 abstract description 2
- KHPCPRHQVVSZAH-UHFFFAOYSA-N trans-cinnamyl beta-D-glucopyranoside Natural products OC1C(O)C(O)C(CO)OC1OCC=CC1=CC=CC=C1 KHPCPRHQVVSZAH-UHFFFAOYSA-N 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000011800 void material Substances 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 230000005764 inhibitory process Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- 238000004080 punching Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49517—Additional leads
- H01L23/49524—Additional leads the additional leads being a tape carrier or flat leads
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/48—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor
- H01L23/488—Arrangements for conducting electric current to or from the solid state body in operation, e.g. leads, terminal arrangements ; Selection of materials therefor consisting of soldered or bonded constructions
- H01L23/495—Lead-frames or other flat leads
- H01L23/49541—Geometry of the lead-frame
- H01L23/49562—Geometry of the lead-frame for devices being provided for in H01L29/00
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
- H01L29/861—Diodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/34—Strap connectors, e.g. copper straps for grounding power devices; Manufacturing methods related thereto
- H01L2224/39—Structure, shape, material or disposition of the strap connectors after the connecting process
- H01L2224/40—Structure, shape, material or disposition of the strap connectors after the connecting process of an individual strap connector
- H01L2224/401—Disposition
- H01L2224/40151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/40221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/40245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Photovoltaic Devices (AREA)
Abstract
A kind of ultrathin type stamp-mounting-paper diode.It is related to photovoltaic art more particularly to a kind of ultrathin stamp-mounting-paper diode.It is simple to provide a kind of structure, facilitates processing, connects reliable ultrathin stamp-mounting-paper diode.Including chassis base, frame pin, plastic-sealed body, chip and aluminium strip, the chassis base is identical with the thickness of frame pin, spacing is equipped between the chassis base and frame pin, one end of the aluminium strip passes through chip connection framework bottom plate, other end connection framework pin, the plastic-sealed body is for coating chassis base, chip, aluminium strip and frame pin.This invention ensures that the effect of welding, is less prone to rosin joint phenomenon, improves product quality.
Description
Technical field
The present invention relates to photovoltaic art more particularly to a kind of ultrathin stamp-mounting-paper diodes.
Background technique
With greatly developing for photovoltaic diode, the type of terminal box also becomes more and more, along with the limitation of cost,
So that people are also increasingly stringenter the performance requirement of diode.Traditional product is mainly made by axial direction and TO-263 series of products
With since the thickness of product ontology limits, the cost of terminal box, which is reduced, certain inhibition, becomes this field skill
Art personnel technical problem urgently to be resolved.
State Intellectual Property Office is CN105227129B, entitled " high thermal conductivity in the notification number of 2017.11.28 days bulletins
Patch bypass " diode, bonding area is big, has better heat dissipation performance, improves service life.However, its exist with
Lower problem: a, frame patch form step integral structure by thin slice and sheet, and work in-process, punching press difficulty is big, at high cost；b,
As shown in figure 3, wire jumper welding is welded using 3 point contacts, is easily deformed, not easily-controllable since its pin (i.e. three foot pins 7) separates
Flatness processed, in this way, being wherein easy to appear rosin joint, technique controlling difficulty is big.
Summary of the invention
The present invention facilitates processing, the reliable ultrathin type patch two of connection in view of the above problems, to provide a kind of structure simple
Pole pipe.
The technical scheme is that including chassis base, frame pin, plastic-sealed body, chip and aluminium strip, the framework bottom
Plate is identical with the thickness of frame pin, spacing is equipped between the chassis base and frame pin, one end of the aluminium strip passes through
Chip connection framework bottom plate, other end connection framework pin, the plastic-sealed body is for coating chassis base, chip, aluminium strip and frame
Frame pin.
4-10 times with a thickness of chassis base thickness of the plastic-sealed body.
The chassis base is equipped with a pair and crosses glue hole, and the glue hole of crossing is coated in plastic-sealed body.
The frame pin is in " mountain " font, including plate body and three pins being located on the outside of plate body, the plate body direction
Chassis base, the aluminium strip connect plate body, and the plastic-sealed body is used for the inside of encapsulation main body and three pins.
The thickness of the chassis base is lower than 0.4mm.
The present invention at work, the thickness of chassis base is carried out thinned, keeps it identical with the thickness of frame pin, convenient
Processing, ensure that the flatness of frame；Meanwhile frame pin being separately provided, frame pin and chassis base interval are arranged, and lead to
Aluminium strip welded connecting is crossed, in this way, only need to can realize connection by two-point contact, the effect of welding is ensure that, is less prone to void
Phenomenon is welded, product quality is improved.
Detailed description of the invention
Fig. 1 is structural schematic diagram of the invention,
Fig. 2 is the schematic diagram of internal structure of Fig. 1,
Fig. 3 is the structural schematic diagram of the prior art；
1 is chassis base in figure, and 2 be frame pin, and 21 be ontology, and 22 be pin, and 3 be plastic-sealed body, and 4 be chip, and 5 be aluminium strip, 6
It was glue hole, 7 be three foot pins.
Specific embodiment
The present invention is as shown in Figs. 1-2, including chassis base 1, frame pin 2, plastic-sealed body 3, chip 4 and aluminium strip 5, the frame
Frame bottom plate is identical with the thickness of frame pin, and spacing, one end of the aluminium strip are equipped between the chassis base and frame pin
By chip connection framework bottom plate, other end connection framework pin, the plastic-sealed body is for coating chassis base, chip, aluminium strip
And frame pin.
The present invention at work, the thickness of chassis base is carried out thinned, keeps it identical with the thickness of frame pin, convenient
Processing, ensure that the flatness of frame；Meanwhile frame pin being separately provided, frame pin and chassis base interval are arranged, and lead to
Aluminium strip welded connecting is crossed, in this way, only need to can realize connection by two-point contact, the effect of welding is ensure that, is less prone to void
Phenomenon is welded, product quality is improved.It is connected by aluminium strip, facilitates processing, it is at low cost.
4-10 times with a thickness of chassis base thickness of the plastic-sealed body.By setting the thickness of chassis base, to adjust
The thickness of whole plastic-sealed body conveniently adapts to the demand of different clients, reliably reduces cost.
The chassis base is equipped with a pair and crosses glue hole 6, and the glue hole of crossing is coated in plastic-sealed body.Glue hole was set, was added
The bond strength of strong frame bottom plate and plastic packaging material, connection is reliable, improves service life.
The frame pin is in " mountain " font, including plate body and three pins being located on the outside of plate body, the plate body direction
Chassis base, the aluminium strip connect plate body, and the plastic-sealed body is used for the inside of encapsulation main body and three pins.
In this way, frame pin is arranged to plate body and three pins integrated moldings, facilitate processing；Meanwhile it only need to be by aluminium strip
Plate body is connected, processing is facilitated.Three pins are connected, and keep same plane, weld easily controllable.
The thickness of the chassis base is lower than 0.4mm.It is carried out by the thickness to chassis base thinned, reduces cost, just
In processing.In this way, chassis base and frame pin can facilitate processing by copper strips punch forming.
Claims (5)
1. a kind of ultrathin type stamp-mounting-paper diode, which is characterized in that including chassis base, frame pin, plastic-sealed body, chip and aluminium
Band, the chassis base is identical with the thickness of frame pin, and spacing, the aluminium are equipped between the chassis base and frame pin
One end of band is by chip connection framework bottom plate, and other end connection framework pin, the plastic-sealed body is for coating chassis base, core
Piece, aluminium strip and frame pin.
2. a kind of ultrathin stamp-mounting-paper diode according to claim 1, which is characterized in that the plastic-sealed body with a thickness of frame
4-10 times of frame base plate thickness.
3. a kind of ultrathin stamp-mounting-paper diode according to claim 1 or 2, which is characterized in that set on the chassis base
There is a pair to cross glue hole, the glue hole of crossing is coated in plastic-sealed body.
4. a kind of ultrathin stamp-mounting-paper diode according to claim 1, which is characterized in that the frame pin is in " mountain " word
Shape, including plate body and three pins being located on the outside of plate body, the plate body connects plate body, institute towards chassis base, the aluminium strip
State inside of the plastic-sealed body for encapsulation main body and three pins.
5. a kind of ultrathin stamp-mounting-paper diode according to claim 1, which is characterized in that the thickness of the chassis base is low
In 0.4mm.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811241277.8A CN109148406A (en) | 2018-10-24 | 2018-10-24 | A kind of ultrathin type stamp-mounting-paper diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811241277.8A CN109148406A (en) | 2018-10-24 | 2018-10-24 | A kind of ultrathin type stamp-mounting-paper diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109148406A true CN109148406A (en) | 2019-01-04 |
Family
ID=64809360
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811241277.8A Withdrawn CN109148406A (en) | 2018-10-24 | 2018-10-24 | A kind of ultrathin type stamp-mounting-paper diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109148406A (en) |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101404274A (en) * | 2008-11-13 | 2009-04-08 | 佛山市蓝箭电子有限公司 | Lead frame, packaging structure and packaging method for packaging three-pin electronic component |
| CN202352653U (en) * | 2011-11-30 | 2012-07-25 | 常州星海电子有限公司 | Minitype patch-type diode |
| CN102629599A (en) * | 2012-04-06 | 2012-08-08 | 天水华天科技股份有限公司 | Quad flat no lead package and production method thereof |
| CN103779287A (en) * | 2014-02-11 | 2014-05-07 | 扬州江新电子有限公司 | Packaged chip and method for ultrathin miniature SMD micro-power consumption sound control sensor |
| CN103887407A (en) * | 2014-03-19 | 2014-06-25 | 浙江古越龙山电子科技发展有限公司 | Miniature SMD light emitting diode and production process thereof |
| CN207183282U (en) * | 2017-07-28 | 2018-04-03 | 阳信金鑫电子有限公司 | A kind of high current mounts diode package structure |
-
2018
- 2018-10-24 CN CN201811241277.8A patent/CN109148406A/en not_active Withdrawn
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101404274A (en) * | 2008-11-13 | 2009-04-08 | 佛山市蓝箭电子有限公司 | Lead frame, packaging structure and packaging method for packaging three-pin electronic component |
| CN202352653U (en) * | 2011-11-30 | 2012-07-25 | 常州星海电子有限公司 | Minitype patch-type diode |
| CN102629599A (en) * | 2012-04-06 | 2012-08-08 | 天水华天科技股份有限公司 | Quad flat no lead package and production method thereof |
| CN103779287A (en) * | 2014-02-11 | 2014-05-07 | 扬州江新电子有限公司 | Packaged chip and method for ultrathin miniature SMD micro-power consumption sound control sensor |
| CN103887407A (en) * | 2014-03-19 | 2014-06-25 | 浙江古越龙山电子科技发展有限公司 | Miniature SMD light emitting diode and production process thereof |
| CN207183282U (en) * | 2017-07-28 | 2018-04-03 | 阳信金鑫电子有限公司 | A kind of high current mounts diode package structure |
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| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| WW01 | Invention patent application withdrawn after publication | ||
| WW01 | Invention patent application withdrawn after publication |
Application publication date: 20190104 |