CN207966978U - Two-piece type synchronous rectification diode with closed notch - Google Patents
Two-piece type synchronous rectification diode with closed notch Download PDFInfo
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- CN207966978U CN207966978U CN201721879300.7U CN201721879300U CN207966978U CN 207966978 U CN207966978 U CN 207966978U CN 201721879300 U CN201721879300 U CN 201721879300U CN 207966978 U CN207966978 U CN 207966978U
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- 230000001360 synchronised effect Effects 0.000 title claims abstract description 37
- 238000007373 indentation Methods 0.000 claims abstract description 4
- 229910000881 Cu alloy Inorganic materials 0.000 claims description 4
- 238000010276 construction Methods 0.000 abstract description 4
- 238000000034 method Methods 0.000 description 5
- 238000004806 packaging method and process Methods 0.000 description 5
- 238000004519 manufacturing process Methods 0.000 description 4
- 238000003466 welding Methods 0.000 description 4
- 238000005453 pelletization Methods 0.000 description 3
- 238000007747 plating Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- 239000000084 colloidal system Substances 0.000 description 2
- 238000010586 diagram Methods 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000009434 installation Methods 0.000 description 2
- 238000004080 punching Methods 0.000 description 2
- 230000000087 stabilizing effect Effects 0.000 description 2
- 230000009466 transformation Effects 0.000 description 2
- 230000007812 deficiency Effects 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 230000017525 heat dissipation Effects 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000005457 optimization Methods 0.000 description 1
- 238000009527 percussion Methods 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 238000012827 research and development Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
- 238000004381 surface treatment Methods 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- 238000011179 visual inspection Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48153—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being arranged next to each other, e.g. on a common substrate
- H01L2224/48195—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being arranged next to each other, e.g. on a common substrate the item being a discrete passive component
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/481—Disposition
- H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
- H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
- H01L2224/49111—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting two common bonding areas, e.g. Litz or braid wires
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
- H01L2224/491—Disposition
- H01L2224/4912—Layout
- H01L2224/49175—Parallel arrangements
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- Rectifiers (AREA)
Abstract
The utility model discloses the two-piece type synchronous rectification diodes with closed notch, including the first frame, MOSFET chips, control IC chip, the second frame, built-in capacitance, there are two external pins for second frame, second frame is equipped with closed notch, control IC chip is fixed on the second frame, the external terminal of built-in capacitance connects on the second frame, and inscribed line end is located at closed indentation, there；First frame is set there are one external pin, and MOSFET chips are fixed on the first frame；It is connected by bonding line between the MOSFET chips, control IC chip, built-in capacitance.Two-piece type synchronous rectification diode with closed notch optimizes structure, and area can be utilized by integrating PAD, eliminated and easily caused undesirable fault of construction.
Description
Technical field
The utility model is related to chip production field, two pole of two-piece type synchronous rectification of especially a kind of closed notch of band
Pipe.
Background technology
The structural principle of Schottky Rectifier makes a big difference usually to be referred to as PN junction rectifying tube with PN junction rectifying tube and tie
Rectifying tube, and-half conduit rectifying tube of metal is called Schottky Rectifier.There are whole for existing rectifier cell Schottky diode
The low problem of big transfer efficiency is lost in stream.
Synchronous rectification diode is formed by controlling IC, power MOSFET and its accessory circuit, to realize that low-loss is whole
The new technology of stream.Existing synchronous rectification structural detail my and unfortunately, size is larger, and heat dissipation is difficult, pin is very thin repeatedly, to installation
Using causing certain puzzlement.
Utility model content
In order to solve the deficiencies in the prior art, the utility model proposes the two-piece type synchronous rectifications two with closed notch
Pole pipe optimizes structure, and area can be utilized by integrating PAD, eliminated and easily caused undesirable fault of construction.
The utility model adopts the following technical solution：
Two-piece type synchronous rectification diode with closed notch, including the first frame, MOSFET chips, control IC cores
Piece, the second frame, built-in capacitance, for second frame there are two external pin, the second frame is equipped with closed notch, control
IC chips are fixed on the second frame, and the external terminal of built-in capacitance connects on the second frame, and inscribed line end is located at closed notch
Place；First frame is set there are one external pin, and MOSFET chips are fixed on the first frame；The MOSFET chips, control IC
It is connected by bonding line between chip, built-in capacitance.
Further, the built-in capacitance is MLCC capacitances.
Further, first frame, the second frame are copper alloy frame.
Further, first frame, MOSFET chips, control IC chip, the second frame, built-in capacitance pass through bonding
Wire bonding is molded post package in plastic-sealed body, constitutes the synchronous rectification diode of an entirety.
Further, the external pin of first frame is the cathode of synchronous rectification diode, the second frame it is outer
Set the anode that pin is synchronous rectification diode.
Use the advantageous effects that technical solution as above obtains for：
Comply with semiconductor rectifier device to it is lightening, miniaturization, surface-pasted development trend, the utility model research and development
Compact synchronous rectification structure and preparation method thereof, optimization structure integrated by element, exclusion easily cause undesirable fault of construction
Etc. means, reach diminution component size, simplify mounting process, improve the purpose of thermal diffusivity, therefore the synchronous rectification structure has
Great superiority.
Two-piece type synchronous rectification diode with closed notch, optimizes structure, integrate PAD can utilize area (PCB or
Pad in printed circuit board is put into area), it eliminates and easily causes undesirable fault of construction.
It is gone out on the second frame in the way of punching and is closed notch to accommodate MLCC capacitances, this method ensure that frame
Integrality and the binding force for improving plastic-sealed body and frame avoid the percussion of colloid during plastic packaging to frame, and whole
PAD areas can be utilized by having closed the second frame, and space is provided for later stage keystroke zygonema and extension.
Description of the drawings
Fig. 1 is the two-piece type synchronous rectification diode structural schematic diagram with closed notch.
Fig. 2 is the two-piece type synchronous rectification diode manufacturing process schematic diagram with closed notch.
Fig. 3 is the two-piece type synchronous rectification diode product packaging appearance size with closed notch.
Fig. 4 is the two-piece type synchronous rectification diode interiors of products control principle drawing with closed notch.
Fig. 5 is the utility model forward direction rectification application circuit.
Fig. 6 is the reversed rectification application circuit of the utility model.
In figure, the 1, first frame；2, MOSFET chips；3, IC chip is controlled；4, the second frame；5, built-in capacitance.
Specific implementation mode
It is described further in conjunction with 1 to 6 pair of specific embodiment of the present utility model of attached drawing：
Embodiment 1：
As shown in Figure 1, the two-piece type synchronous rectification diode with closed notch, including the first frame 1, MOSFET chips
2, IC chip 3, the second frame 4, built-in capacitance 5 are controlled, there are two external pin, the second frames to be equipped with envelope for second frame
Enclosed notch, control IC chip are fixed on the second frame, and the external terminal of built-in capacitance connects on the second frame, and line end position is inscribed
In closed indentation, there；First frame is set there are one external pin, and MOSFET chips are fixed on the first frame；The MOSFET
It is connected by bonding line between chip, control IC chip, built-in capacitance.
Built-in capacitance is MLCC capacitances.First frame, the second frame are copper alloy frame.First frame 1, MOSFET chips
2, IC chip 3, the second frame 4, built-in capacitance 5 are controlled and, in plastic-sealed body, constitutes one by bonding line welding fabrication post package
Whole synchronous rectification diode.
It is gone out on the second frame in the way of punching and is closed notch to accommodate MLCC capacitances, this method ensure that frame
The binding force that plastic-sealed body and frame are improved under the preceding topic of integrality makees the impact of frame than colloid during avoiding plastic packaging
With, and incorporate the second frame can utilize PAD areas, for later stage keystroke zygonema and extend provide space.
Embodiment 2：
Two-piece type synchronous rectification diode with closed notch is prepared using following flow：
(1) raw material prepares：The copper alloy frame for customizing the first frame, the second frame (being closed gap type), prepares
MOSFET chips, control IC chip, built-in capacitance are examined appearance and are electrically picked out bad before device installation.
(2) chip load and welding：MOSFET chips are combined with the first frame by automatic welding process, control IC cores
Piece and built-in capacitance are bonded with the second frame, and welding fabrication.
(3) wire bonding：It is bonded each device by automatic wire bonder and constitutes circuit.
(4) plastic packaging is molded：The device for being bonded completion is molded by molding process plastic packaging.
(5) plating and pelletizing：Go residue glue, pin are tin plating (to be not required to if after frame is using NiPdAu or nickel golden watch surface treatment
It is tin plating), baking, pelletizing.
(6) print is surveyed：By lettering mounted box after element after pelletizing after tested machine test passes.
(7) visual inspection：Microscopically observation rejects bad order.
(8) it packs and is put in storage.
The two-piece type synchronous rectification diode of the closed notch of band as shown in Figure 3 is fabricated to using flow as above.
Embodiment 3：
As described in Example 1, the external pin of the two-piece type synchronous rectification diode with closed notch, the first frame is
The cathode of synchronous rectification diode, the external pin of the second frame are the anode of synchronous rectification diode, and built-in capacitance, which is located at, to be opened
The exit for putting formula indentation, there is capacitance terminals.As shown in figure 4, it can be control that when cathode voltage is more than anode, built-in capacitance, which is filled,
IC chip power supply processed；When control IC chip detects that element terminal voltage is more than turning-on voltage Von, MOSFET chips are opened, when
When detecting that element terminal voltage goes to zero, MOSFET chips are closed.
Embodiment 4：
Two-piece type synchronous rectification diode with closed notch is applied in positive rectification, reversed rectification is applied such as Fig. 5, figure
Shown in 6.In positive rectification application, exchange input is become first through bridge rectifier, then filtered, pulsewidth modulation by transformer
Pressure, the anode of the two-piece type synchronous rectification diode of the closed notch of high-pressure side connect band of transformer, then connect load through voltage stabilizing.
In reversed rectification application, exchange input is first through bridge rectifier, then filtered, pulsewidth modulation, by transformer transformation, transformation
The cathode of the two-piece type synchronous rectification diode of the closed notch of low-pressure end connect band of device, then connect load through voltage stabilizing.
Certainly, the preferred embodiment of only the utility model described above, the utility model is not limited to enumerate above-mentioned
Embodiment, it should be noted that for any technical person familiar with the field under the guidance of this specification, that is made is all etc.
With replacement, apparent variant, all falls within the essential scope of this specification, ought to be protected by the utility model.
Claims (5)
1. the two-piece type synchronous rectification diode with closed notch, which is characterized in that including the first frame (1), MOSFET cores
Piece (2), control IC chip (3), the second frame (4), built-in capacitance (5), second frame (4) is there are two external pin, and the
Two frames (4) are equipped with closed notch, and control IC chip (3) is fixed on the second frame (4), the external connection of built-in capacitance (5)
On end the second frame of connection (4), inscribed line end is located at closed indentation, there；
First frame (1) is set there are one external pin, and MOSFET chips (2) are fixed on the first frame (1)；
The MOSFET chips (2), control IC chip (3), built-in capacitance are connected between (5) by bonding line.
2. the two-piece type synchronous rectification diode of the closed notch of band according to claim 1, which is characterized in that in described
It is MLCC capacitances to set capacitance (5).
3. the two-piece type synchronous rectification diode of the closed notch of band according to claim 1, which is characterized in that described
One frame (1), the second frame (4) are copper alloy frame.
4. the two-piece type synchronous rectification diode of the closed notch of band according to claim 1, which is characterized in that described
One frame (1), MOSFET chips (2), control IC chip (3), the second frame (4), built-in capacitance (5) are welded by bonding line
Type post package constitutes the synchronous rectification diode of an entirety in plastic-sealed body.
5. the two-piece type synchronous rectification diode of the closed notch of band according to claim 1, which is characterized in that described
The external pin of one frame (1) is the cathode of synchronous rectification diode, and the external pin of the second frame (4) is two pole of synchronous rectification
The anode of pipe.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721879300.7U CN207966978U (en) | 2017-12-28 | 2017-12-28 | Two-piece type synchronous rectification diode with closed notch |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201721879300.7U CN207966978U (en) | 2017-12-28 | 2017-12-28 | Two-piece type synchronous rectification diode with closed notch |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN207966978U true CN207966978U (en) | 2018-10-12 |
Family
ID=63730607
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201721879300.7U Active CN207966978U (en) | 2017-12-28 | 2017-12-28 | Two-piece type synchronous rectification diode with closed notch |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN207966978U (en) |
-
2017
- 2017-12-28 CN CN201721879300.7U patent/CN207966978U/en active Active
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| PE01 | Entry into force of the registration of the contract for pledge of patent right |
Denomination of utility model: Two Piece Synchronous Rectifier Diode with Closed Gap Effective date of registration: 20230404 Granted publication date: 20181012 Pledgee: Bank of China Limited Yanzhou sub branch Pledgor: SHANDONG XINNUO ELECTRONIC TECHNOLOGY CO.,LTD. Registration number: Y2023980037377 |
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| PE01 | Entry into force of the registration of the contract for pledge of patent right | ||
| PC01 | Cancellation of the registration of the contract for pledge of patent right |
Date of cancellation: 20231120 Granted publication date: 20181012 Pledgee: Bank of China Limited Yanzhou sub branch Pledgor: SHANDONG XINNUO ELECTRONIC TECHNOLOGY CO.,LTD. Registration number: Y2023980037377 |
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| PC01 | Cancellation of the registration of the contract for pledge of patent right |