CN207966978U - Two-piece type synchronous rectification diode with closed notch - Google Patents
Two-piece type synchronous rectification diode with closed notch Download PDFInfo
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- CN207966978U CN207966978U CN201721879300.7U CN201721879300U CN207966978U CN 207966978 U CN207966978 U CN 207966978U CN 201721879300 U CN201721879300 U CN 201721879300U CN 207966978 U CN207966978 U CN 207966978U
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/541—Dispositions of bond wires
- H10W72/5445—Dispositions of bond wires being orthogonal to a side surface of the chip, e.g. parallel arrangements
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W72/00—Interconnections or connectors in packages
- H10W72/50—Bond wires
- H10W72/541—Dispositions of bond wires
- H10W72/547—Dispositions of multiple bond wires
- H10W72/5475—Dispositions of multiple bond wires multiple bond wires connected to common bond pads at both ends of the wires
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
- H10W90/756—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a stacked lead frame, conducting package substrate or heat sink
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
- H10W90/00—Package configurations
- H10W90/701—Package configurations characterised by the relative positions of pads or connectors relative to package parts
- H10W90/751—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires
- H10W90/759—Package configurations characterised by the relative positions of pads or connectors relative to package parts of bond wires between a chip and a laterally-adjacent discrete passive device
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Abstract
Description
技术领域technical field
本实用新型涉及芯片生产领域,尤其是一种带封闭式缺口的两片式同步整流二极管。The utility model relates to the field of chip production, in particular to a two-piece synchronous rectification diode with a closed gap.
背景技术Background technique
肖特基整流管的结构原理与PN结整流管有很大的区别通常将PN结整流管称作结整流管,而把金属-半导管整流管叫作肖特基整流管。现有的整流元件肖特基二极管存在整流损耗大转换效率低的问题。The structural principle of the Schottky rectifier is very different from that of the PN junction rectifier. Usually, the PN junction rectifier is called a junction rectifier, and the metal-semiconductor rectifier is called a Schottky rectifier. The existing rectification element Schottky diode has the problem of large rectification loss and low conversion efficiency.
同步整流二极管是由控制IC、功率MOSFET及其附属电路组成,从而实现低损耗整流的新技术。现有同步整流结构元件拙而不巧,尺寸较大,散热困难、引脚纤细反复,对安装使用造成一定的困扰。Synchronous rectification diode is composed of control IC, power MOSFET and its auxiliary circuit, so as to realize the new technology of low loss rectification. The existing synchronous rectification structural components are clumsy and inconvenient, large in size, difficult to dissipate heat, and thin and repetitive pins, which cause certain troubles for installation and use.
实用新型内容Utility model content
为了解决现有技术的不足,本实用新型提出了带封闭式缺口的两片式同步整流二极管,优化了结构,整合PAD可利用面积,排除了易造成不良的结构缺陷。In order to solve the deficiencies of the prior art, the utility model proposes a two-piece synchronous rectification diode with a closed gap, which optimizes the structure, integrates the available area of the PAD, and eliminates structural defects that are likely to cause defects.
本实用新型采用如下技术方案:The utility model adopts the following technical solutions:
带封闭式缺口的两片式同步整流二极管,包括第一框架、MOSFET芯片、控制IC芯片、第二框架、内置电容,所述第二框架有两个外置引脚,第二框架上设有封闭式缺口,控制IC 芯片固定在第二框架,内置电容的外接线端连接第二框架上,内接线端位于封闭式缺口处;第一框架设有一个外置引脚,MOSFET芯片固定在第一框架上;所述MOSFET芯片、控制IC芯片、内置电容之间通过键合线连接。A two-piece synchronous rectification diode with a closed gap, including a first frame, a MOSFET chip, a control IC chip, a second frame, and a built-in capacitor. The second frame has two external pins, and the second frame is provided with The closed gap, the control IC chip is fixed on the second frame, the external terminal of the built-in capacitor is connected to the second frame, and the internal terminal is located at the closed gap; the first frame has an external pin, and the MOSFET chip is fixed on the second frame. On a frame; the MOSFET chip, the control IC chip, and the built-in capacitor are connected through bonding wires.
进一步地,所述内置电容为MLCC电容。Further, the built-in capacitor is an MLCC capacitor.
进一步地,所述第一框架、第二框架为铜合金框架。Further, the first frame and the second frame are copper alloy frames.
进一步地,所述第一框架、MOSFET芯片、控制IC芯片、第二框架、内置电容通过键合线焊接成型后封装于塑封体内,构成一个整体的同步整流二极管。Further, the first frame, the MOSFET chip, the control IC chip, the second frame, and the built-in capacitor are welded and molded by bonding wires, and then packaged in a plastic package to form an integral synchronous rectification diode.
更进一步地,所述第一框架的外置引脚为同步整流二极管的阴极,第二框架的外置引脚为同步整流二极管的阳极。Furthermore, the external pin of the first frame is the cathode of the synchronous rectification diode, and the external pin of the second frame is the anode of the synchronous rectification diode.
采用如上技术方案取得的有益技术效果为:The beneficial technical effect obtained by adopting the above technical scheme is:
顺应半导体整流器件向轻薄化、小型化、表面贴装的发展趋势,本实用新型研发的紧凑型同步整流结构及其制作方法,通过元件集成、优化结构,排除易造成不良的结构缺陷等手段,达到缩小元件尺寸,简化安装工艺,提高散热性之目的,因此该同步整流结构具有极大的优越性。Complying with the development trend of thinner, smaller and surface-mounted semiconductor rectifier devices, the compact synchronous rectification structure and its manufacturing method developed by this utility model eliminate structural defects that are likely to cause defects through component integration and optimization of the structure. The purpose of reducing the size of components, simplifying the installation process, and improving heat dissipation is achieved, so the synchronous rectification structure has great advantages.
带封闭式缺口的两片式同步整流二极管,优化了结构,整合PAD可利用面积(PCB或印刷电路板中的焊盘放入面积),排除了易造成不良的结构缺陷。The two-piece synchronous rectifier diode with a closed gap optimizes the structure and integrates the available area of the PAD (the pad placement area in the PCB or printed circuit board), eliminating structural defects that may cause defects.
利用冲切方式在第二框架上冲出闭合缺口以容纳MLCC电容,该方法保证了框架的完整性并提高了塑封体与框架的结合力,避免了塑封过程中胶体对框架的冲击作用,且整合了第二框架可利用PAD面积,为后期打键合线及扩展提供了空间。Punch out a closed gap on the second frame by punching to accommodate the MLCC capacitor. This method ensures the integrity of the frame and improves the bonding force between the plastic package and the frame, avoiding the impact of the colloid on the frame during the plastic sealing process, and Integrating the second frame can make use of the PAD area, providing space for bonding wires and expansion in the later stage.
附图说明Description of drawings
图1为带封闭式缺口的两片式同步整流二极管结构示意图。Figure 1 is a schematic diagram of the structure of a two-piece synchronous rectification diode with a closed gap.
图2为带封闭式缺口的两片式同步整流二极管制作过程示意图。Fig. 2 is a schematic diagram of the manufacturing process of a two-piece synchronous rectification diode with a closed gap.
图3为带封闭式缺口的两片式同步整流二极管产品封装外形尺寸。Figure 3 shows the package dimensions of a two-piece synchronous rectifier diode product with a closed gap.
图4为带封闭式缺口的两片式同步整流二极管产品内部控制原理图。Figure 4 is a schematic diagram of the internal control of a two-piece synchronous rectifier diode product with a closed gap.
图5为本实用新型正向整流应用电路图。Fig. 5 is the application circuit diagram of the forward rectification of the utility model.
图6为本实用新型反向整流应用电路图。Fig. 6 is a circuit diagram of a reverse rectification application of the utility model.
图中,1、第一框架;2、MOSFET芯片;3、控制IC芯片;4、第二框架;5、内置电容。In the figure, 1. first frame; 2. MOSFET chip; 3. control IC chip; 4. second frame; 5. built-in capacitor.
具体实施方式Detailed ways
结合附图1至6对本实用新型的具体实施方式做进一步说明:The specific embodiment of the utility model is further described in conjunction with accompanying drawing 1 to 6:
实施例1:Example 1:
如图1所示,带封闭式缺口的两片式同步整流二极管,包括第一框架1、MOSFET芯片2、控制IC芯片3、第二框架4、内置电容5,所述第二框架有两个外置引脚,第二框架上设有封闭式缺口,控制IC芯片固定在第二框架,内置电容的外接线端连接第二框架上,内接线端位于封闭式缺口处;第一框架设有一个外置引脚,MOSFET芯片固定在第一框架上;所述MOSFET芯片、控制IC芯片、内置电容之间通过键合线连接。As shown in Figure 1, the two-piece synchronous rectification diode with a closed gap includes a first frame 1, a MOSFET chip 2, a control IC chip 3, a second frame 4, and a built-in capacitor 5, and the second frame has two External pins, the second frame is provided with a closed gap, the control IC chip is fixed on the second frame, the external terminal of the built-in capacitor is connected to the second frame, and the internal terminal is located at the closed gap; the first frame has An external pin, the MOSFET chip is fixed on the first frame; the MOSFET chip, the control IC chip, and the built-in capacitor are connected through bonding wires.
内置电容为MLCC电容。第一框架、第二框架为铜合金框架。第一框架1、MOSFET芯片2、控制IC芯片3、第二框架4、内置电容5通过键合线焊接成型后封装于塑封体内,构成一个整体的同步整流二极管。The built-in capacitors are MLCC capacitors. The first frame and the second frame are copper alloy frames. The first frame 1, the MOSFET chip 2, the control IC chip 3, the second frame 4, and the built-in capacitor 5 are welded and formed by bonding wires, and then packaged in a plastic package to form an integral synchronous rectification diode.
利用冲切方式在第二框架上冲出闭合缺口以容纳MLCC电容,该方法保证了框架的完整性的前题下提高了塑封体与框架的结合力,比避免了塑封过程中胶体对框架的冲击作用,且整合了第二框架可利用PAD面积,为后期打键合线及扩展提供了空间。Use the punching method to punch out the closed gap on the second frame to accommodate the MLCC capacitor. This method ensures the integrity of the frame, improves the bonding force between the plastic package and the frame, and avoids the glue on the frame during the plastic sealing process. The impact effect, and the integration of the second frame can use the PAD area, which provides space for later bonding wires and expansion.
实施例2:Example 2:
带封闭式缺口的两片式同步整流二极管采用如下流程制备:Two-piece synchronous rectifier diodes with closed gaps are fabricated using the following procedure:
(1)原物料准备:定制第一框架、第二框架(闭合缺口式)的铜合金框架,准备MOSFET 芯片、控制IC芯片、内置电容,器件安装前检验外观及电性剔出不良。(1) Raw material preparation: Customize the copper alloy frame of the first frame and the second frame (closed gap type), prepare MOSFET chips, control IC chips, and built-in capacitors, and inspect the appearance and electrical defects before device installation.
(2)芯片装片及焊接:通过自动焊接工序将MOSFET芯片与第一框架结合,控制IC芯片及内置电容与第二框架贴合,并焊接成型。(2) Chip mounting and welding: through the automatic welding process, the MOSFET chip is combined with the first frame, the control IC chip and the built-in capacitor are bonded to the second frame, and welded and formed.
(3)引线键合:通过自动打线机键合各器件构成回路。(3) Wire bonding: each device is bonded by an automatic wire bonding machine to form a circuit.
(4)塑封成型:将已键合完成的器件通过压模工序塑封成型。(4) Plastic sealing and molding: plastic sealing and molding of the bonded devices through a compression molding process.
(5)电镀及切粒:去残胶、引脚镀锡(若框架采用镍钯金或镍金表面处理后则不需镀锡)、烘烤、切粒。(5) Electroplating and dicing: Remove residual glue, tin-plate pins (if the frame is treated with nickel-palladium-gold or nickel-gold surface, tin-plating is not required), baking, and dicing.
(6)印测:将切粒后元件经测试机测试合格后印字装盒。(6) Printing test: After the diced components are tested by the testing machine, they are printed and packed into boxes.
(7)目检:显微镜下观察,剔除外观不良。(7) Visual inspection: observe under a microscope, and remove bad appearance.
(8)包装及入库。(8) Packaging and storage.
采用如上流程制作成如图3所示的带封闭式缺口的两片式同步整流二极管。A two-piece synchronous rectifier diode with a closed gap as shown in FIG. 3 is manufactured by the above process.
实施例3:Example 3:
如实施例1所述,带封闭式缺口的两片式同步整流二极管,第一框架的外置引脚为同步整流二极管的阴极,第二框架的外置引脚为同步整流二极管的阳极,内置电容位于开放式缺口处的引出端为电容接线端。如图4所示,当阴极电压大于阳极时内置电容充能为控制IC芯片供电;当控制IC芯片检测到元件端电压大于开通电压Von时,开通MOSFET芯片,当检测到元件端电压趋于零时,关闭MOSFET芯片。As described in Embodiment 1, for a two-piece synchronous rectification diode with a closed gap, the external pin of the first frame is the cathode of the synchronous rectification diode, and the external pin of the second frame is the anode of the synchronous rectification diode. The lead-out end of the capacitor located at the open gap is the capacitor terminal. As shown in Figure 4, when the cathode voltage is greater than the anode, the built-in capacitor is charged to supply power to the control IC chip; when the control IC chip detects that the component terminal voltage is greater than the turn-on voltage Von, the MOSFET chip is turned on, and when the component terminal voltage is detected to be zero , turn off the MOSFET chip.
实施例4:Example 4:
带封闭式缺口的两片式同步整流二极管在正向整流应用、反向整流应用如图5、图6所示。在正向整流应用中,交流输入先经桥式整流电路,再经滤波、脉宽调制,由变压器变压,变压器的高压端连接带封闭式缺口的两片式同步整流二极管的阳极,再经稳压接负载。在反向整流应用中,交流输入先经桥式整流电路,再经滤波、脉宽调制,由变压器变压,变压器的低压端连接带封闭式缺口的两片式同步整流二极管的阴极,再经稳压接负载。The two-piece synchronous rectification diode with a closed gap is shown in Figure 5 and Figure 6 in forward rectification and reverse rectification applications. In forward rectification applications, the AC input first passes through a bridge rectifier circuit, then filtered, pulse width modulated, and then transformed by a transformer. Regulated load. In the application of reverse rectification, the AC input first passes through the bridge rectifier circuit, then filtered, pulse width modulated, and then transformed by the transformer. Regulated load.
当然,以上说明仅仅为本实用新型的较佳实施例,本实用新型并不限于列举上述实施例,应当说明的是,任何熟悉本领域的技术人员在本说明书的指导下,所做出的所有等同替代、明显变形形式,均落在本说明书的实质范围之内,理应受到本实用新型的保护。Of course, the above descriptions are only preferred embodiments of the present invention, and the present invention is not limited to the above-mentioned embodiments. It should be noted that any person skilled in the art can make all the Equivalent substitutions and obvious deformation forms all fall within the essential scope of this specification and should be protected by the utility model.
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113285616A (en) * | 2021-06-17 | 2021-08-20 | 苏州锴威特半导体股份有限公司 | Low-loss ideal diode |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN113285616A (en) * | 2021-06-17 | 2021-08-20 | 苏州锴威特半导体股份有限公司 | Low-loss ideal diode |
| CN113285616B (en) * | 2021-06-17 | 2025-05-23 | 苏州锴威特半导体股份有限公司 | Low-loss ideal diode |
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