CN102157480A - Bridge rectifier - Google Patents

Bridge rectifier Download PDF

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Publication number
CN102157480A
CN102157480A CN201110032733XA CN201110032733A CN102157480A CN 102157480 A CN102157480 A CN 102157480A CN 201110032733X A CN201110032733X A CN 201110032733XA CN 201110032733 A CN201110032733 A CN 201110032733A CN 102157480 A CN102157480 A CN 102157480A
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CN
China
Prior art keywords
pin
dao
rectification chip
welded
back side
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Pending
Application number
CN201110032733XA
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Chinese (zh)
Inventor
曹燕军
茅礼卿
徐青青
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
ZHANGZHOU YINHESHIJI MICRO-ELECTRONIC Co Ltd
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ZHANGZHOU YINHESHIJI MICRO-ELECTRONIC Co Ltd
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Priority to CN201110032733XA priority Critical patent/CN102157480A/en
Publication of CN102157480A publication Critical patent/CN102157480A/en
Pending legal-status Critical Current

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    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321Disposition
    • H01L2224/32151Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124Aluminium (Al) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45144Gold (Au) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/44Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001Core members of the connector
    • H01L2224/45099Material
    • H01L2224/451Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45138Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/45147Copper (Cu) as principal constituent
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42Wire connectors; Manufacturing methods related thereto
    • H01L2224/47Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481Disposition
    • H01L2224/48151Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732Location after the connecting process
    • H01L2224/73251Location after the connecting process on different surfaces
    • H01L2224/73265Layer and wire connectors
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/013Alloys
    • H01L2924/0132Binary Alloys
    • H01L2924/01322Eutectic Alloys, i.e. obtained by a liquid transforming into two solid phases
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181Encapsulation

Abstract

The invention relates to a bridge rectifier. The bridge rectifier comprises four rectifier chips, four pins and a plastic-packaged body, wherein base islands corresponding to the four rectifier chips and the four pins are all packaged in the plastic-packaged body; the back surface of the first rectifier chip is welded on the first base island by an eutectic; the surface of the first rectifier chip is welded on the fourth base island through a bonding wire; the back surface of the second rectifier chip is welded on the second base island by an eutectic; the surface of the second rectifier chip is welded on the fourth base island through a boning wire; the back surfaces of the third rectifier chip and the fourth rectifier chip are both welded on the third base island by eutectics; the surface of the third rectifier chip is welded on the first base island through a bonding wire; the surface of the fourth rectifier chip is welded on the second base island of the second pin through a bonding wire; and the base islands corresponding to the four pins are all arranged in the plastic-packaged body on the same plane. The bridge rectifier has the advantages of high package efficiency, product thinning, high reliability and the like.

Description

Bridge rectifier
Technical field
The present invention relates to a kind of rectifier, be specifically related to a kind of bridge rectifier.
Background technology
Existing bridge rectifier comprises four rectification chips and four pins, the positive and negative of four rectification chips all is connected with four corresponding Ji Dao of pin by weld tabs, make weld tabs melt by high temperature then, thereby make the Ji Dao of rectification chip and pin weld together, there is certain shortcoming in this structure: the first, and the inefficiency that this connected mode makes assembling; The second, because this syndeton and technology, not only yield is low to make the product of assembling, and stability and consistency are poor, can't guarantee high-quality; The 3rd, because low, the poor quality of yield of product, thereby the defect rate of producing causes the production cost of products height than higher; The 4th, can only encapsulate the fixedly rectification chip of specification, if the specification of rectification chip has changed, the specification of the specification of pin, weld tabs etc. all needs corresponding variation so, and can not the providing covers for compact rectification chip, makes the encapsulation very flexible; The 5th, because the positive and negative of four rectification chips is connected with the Ji Dao of respective pins by weld tabs, make that the package thickness of product is bigger, be difficult to slimming.
Summary of the invention
The purpose of this invention is to provide a kind of not only packaging efficiency height, slimming, and the high bridge rectifier of reliability.
In order to achieve the above object, technical scheme of the present invention is: a kind of bridge rectifier, comprise first rectification chip, second rectification chip, the 3rd rectification chip, the 4th rectification chip, first pin, second pin, the 3rd pin, the 4th pin and plastic-sealed body, the 3rd Ji Dao of first Ji Dao of described first rectification chip, second rectification chip, the 3rd rectification chip, the 4th rectification chip, first pin, second Ji Dao of second pin, the 3rd pin and the 4th Ji Dao of the 4th pin all are encapsulated in the plastic-sealed body, and its innovative point is:
The back side of a, first rectification chip is welded on by eutectic on first Ji Dao of first pin, and the surface of first rectification chip is welded on the 4th Ji Dao of the 4th pin by bonding wire;
The back side of b, second rectification chip is welded on by eutectic on second Ji Dao of second pin, and the surface of second rectification chip is welded on the 4th Ji Dao of the 4th pin by bonding wire;
The back side of c, the 3rd rectification chip is welded on by eutectic on the 3rd Ji Dao of the 3rd pin, and the surface of the 3rd rectification chip is welded on first Ji Dao of first pin by bonding wire;
The back side of d, the 4th rectification chip is welded on by eutectic on the 3rd Ji Dao of the 3rd pin, and the surface of the 4th rectification chip is welded on second Ji Dao of second pin by bonding wire;
The all same floor plan of the 4th Ji Dao of the 3rd Ji Dao of first Ji Dao of e, first pin, second Ji Dao of second pin, the 3rd pin and the 4th pin is in plastic-sealed body.
In technique scheme, described bonding wire is a gold thread or for copper cash or for aluminum steel or for alloy wire.
In technique scheme, the area of the 3rd Ji Dao of described the 3rd pin is respectively greater than the area of second Ji Dao of the area of first Ji Dao of first pin and second pin.
In technique scheme, described first Ji Dao, second Ji Dao, the 3rd Ji Dao and the 4th Ji Dao are laminated structure.
In technique scheme, described first pin stretch out direction and second pin to stretch out direction parallel, the 3rd pin stretch out direction and the 4th pin to stretch out direction parallel; Described first pin and second pin stretch out direction and the 3rd pin and the 4th pin to stretch out direction opposite.
In technique scheme, described first pin, second pin, the 3rd pin and the 4th pin are in the outer part of plastic-sealed body and all are bending-like, and the extension of four pins is in the same plane.
In technique scheme, under the condition that does not possess eutectic welding, the back side of described first rectification chip by scolder welding or conductive adhesive on first Ji Dao of first pin; The back side of second rectification chip by scolder welding or conductive adhesive on second Ji Dao of second pin; The back side of the 3rd rectification chip by scolder welding or conductive adhesive on the 3rd Ji Dao of the 3rd pin; The back side of the 4th rectification chip by scolder welding or conductive adhesive on the 3rd Ji Dao of the 3rd pin.
In technique scheme, the scolder of described scolder welding is a solder stick or for solder(ing) paste or for soldering tin bar or for solder ball or be solder powder.
The good effect that the present invention had is: bridge rectifier of the present invention, because the back side of four rectification chips is welded on the Ji Dao of corresponding four pins by eutectic respectively, and the surface of four rectification chips is welded on the corresponding Ji Dao by bonding wire, this structure, the first, the present invention not only can assemble by automation equipment, has improved operating efficiency, and make acceptance rate height, stability and the high conformity of product, improved the quality of product; The second, because this structure can encapsulate the rectification chip of all size, the specification of pin need not change, thereby makes that the encapsulation flexibility is good; The 3rd and since four corresponding Ji Dao of pin be floor plan in plastic-sealed body, make the product package thickness reduce, the product appearance slimming has improved competitiveness of product.
Description of drawings
Fig. 1 is the structural representation that bridge rectifier of the present invention is cut packaging body open;
Fig. 2 is the left view of Fig. 1;
Fig. 3 is the right view of Fig. 1.
Embodiment
Below in conjunction with accompanying drawing and the embodiment that provides, the present invention is described in further detail.
Referring to Fig. 1,2, shown in 3, a kind of bridge rectifier, comprise first rectification chip 1, second rectification chip 2, the 3rd rectification chip 3, the 4th rectification chip 4, first pin 5, second pin 6, the 3rd pin 7, the 4th pin 8 and plastic-sealed body 9, described first rectification chip 1, second rectification chip 2, the 3rd rectification chip 3, the 4th rectification chip 4, the first basic island 5-1 of first pin 5, the second basic island 6-1 of second pin 6, the 3rd basic island 7-1 of the 3rd pin 7 and the 4th basic island 8-1 of the 4th pin 8 all are encapsulated in the plastic-sealed body 9, the back side of first rectification chip 1 is welded on by eutectic on the first basic island 5-1 of first pin 5, and the surface of first rectification chip 1 is welded on the 4th basic island 8-1 of the 4th pin 8 by bonding wire; The back side of second rectification chip 2 is welded on by eutectic on the second basic island 6-1 of second pin 6, and the surface of second rectification chip 2 is welded on the 4th basic island 8-1 of the 4th pin 8 by bonding wire; The back side of the 3rd rectification chip 3 is welded on by eutectic on the 3rd basic island 7-1 of the 3rd pin 7, and the surface of the 3rd rectification chip 3 is welded on the first basic island 5-1 of first pin 5 by bonding wire; The back side of the 4th rectification chip 4 is welded on by eutectic on the 3rd basic island 7-1 of the 3rd pin 7, and the surface of the 4th rectification chip 4 is welded on the second basic island 6-1 of second pin 6 by bonding wire; The 3rd basic island 7-1 of the first basic island 5-1 of first pin 5, the second basic island 6-1 of second pin 6, the 3rd pin 7 and all same floor plan of the 4th basic island 8-1 of the 4th pin 8 are in plastic-sealed body 9.Wherein, the present invention has guaranteed that four rectification chips reach good Ohmic contact when being contained in pairing basic island respectively.
Shown in Fig. 1,2,3, for the ease of two rectification chips are contained on the Ji Dao of same pin, the area of the 3rd basic island 7-1 of described the 3rd pin 7 is respectively greater than the area of the second basic island 6-1 of the area of the first basic island 5-1 of first pin 5 and second pin 6.
Referring to shown in Figure 1, be contained in respectively on the Ji Dao of respective pins for the ease of four rectification chips, the described first basic island 5-1, the second basic island 6-1, the 3rd basic island 7-1 and the 4th basic island 8-1 are laminated structure.
Shown in Fig. 1,2,3, simple in structure in order to guarantee the present invention, and more reasonable, described first pin 5 stretch out direction and second pin 6 to stretch out direction parallel, the 3rd pin 7 stretch out direction and the 4th pin 8 to stretch out direction parallel; Described first pin 5 and second pin 6 stretch out direction and the 3rd pin 7 and the 4th pin 8 to stretch out direction opposite.
Shown in Fig. 2,3, be contained in when making that the present invention uses on the electronic circuit board take up room little, described first pin 5, second pin 6, the 3rd pin 7 and the 4th pin 8 are in plastic-sealed body 9 outer parts and all are bending-like, and the extension of four pins is in the same plane.
The present invention ought not possess under the condition of eutectic welding, the back side of described first rectification chip 1 by scolder welding or conductive adhesive on the first basic island 5-1 of first pin 5; The back side of second rectification chip 2 by scolder welding or conductive adhesive on the second basic island 6-1 of second pin 6; The back side of the 3rd rectification chip 3 by scolder welding or conductive adhesive on the 3rd basic island 7-1 of the 3rd pin 7; The back side of the 4th rectification chip 4 by scolder welding or conductive adhesive on the 3rd basic island 7-1 of the 3rd pin 7.
The present invention is by Beijing MBO-Doublink Solders Co., Ltd. commercially available scolder and bonding wire, and the scolder of described scolder welding is a solder stick or for solder(ing) paste or for soldering tin bar or for solder ball or be solder powder, and described bonding wire is a gold thread or for copper cash or for aluminum steel or be alloy wire.
When the present invention used, only need be installed in four pins on the electronic circuit board and get final product; The present invention has the packaging efficiency height, product slimming, reliability advantages of higher.

Claims (8)

1. bridge rectifier, comprise first rectification chip (1), second rectification chip (2), the 3rd rectification chip (3), the 4th rectification chip (4), first pin (5), second pin (6), the 3rd pin (7), the 4th pin (8) and plastic-sealed body (9), described first rectification chip (1), second rectification chip (2), the 3rd rectification chip (3), the 4th rectification chip (4), first Ji Dao (5-1) of first pin (5), second Ji Dao (6-1) of second pin (6), the 3rd Ji Dao (7-1) of the 3rd pin (7) and the 4th Ji Dao (8-1) of the 4th pin (8) all are encapsulated in the plastic-sealed body (9), it is characterized in that:
The back side of a, first rectification chip (1) is welded on by eutectic on first Ji Dao (5-1) of first pin (5), and the surface of first rectification chip (1) is welded on the 4th Ji Dao (8-1) of the 4th pin (8) by bonding wire;
The back side of b, second rectification chip (2) is welded on by eutectic on second Ji Dao (6-1) of second pin (6), and the surface of second rectification chip (2) is welded on the 4th Ji Dao (8-1) of the 4th pin (8) by bonding wire;
The back side of c, the 3rd rectification chip (3) is welded on by eutectic on the 3rd Ji Dao (7-1) of the 3rd pin (7), and the surface of the 3rd rectification chip (3) is welded on first Ji Dao (5-1) of first pin (5) by bonding wire;
The back side of d, the 4th rectification chip (4) is welded on by eutectic on the 3rd Ji Dao (7-1) of the 3rd pin (7), and the surface of the 4th rectification chip (4) is welded on second Ji Dao (6-1) of second pin (6) by bonding wire;
The 3rd Ji Dao (7-1) of first Ji Dao (5-1) of e, first pin (5), second Ji Dao (6-1) of second pin (6), the 3rd pin (7) and all same floor plan of the 4th Ji Dao (8-1) of the 4th pin (8) are in plastic-sealed body (9).
2. bridge rectifier according to claim 1 is characterized in that: described bonding wire is a gold thread or for copper cash or for aluminum steel or for alloy wire.
3. bridge rectifier according to claim 1 is characterized in that: the area of the 3rd Ji Dao (7-1) of described the 3rd pin (7) is respectively greater than the area of second Ji Dao (6-1) of the area of first Ji Dao (5-1) of first pin (5) and second pin (6).
4. bridge rectifier according to claim 1 is characterized in that: described first Ji Dao (5-1), second Ji Dao (6-1), the 3rd Ji Dao (7-1) and the 4th Ji Dao (8-1) are laminated structure.
5. bridge rectifier according to claim 1 is characterized in that: described first pin (5) stretch out direction and second pin (6) to stretch out direction parallel, the 3rd pin (7) stretch out direction and the 4th pin (8) to stretch out direction parallel; Described first pin (5) and second pin (6) stretch out direction and the 3rd pin (7) and the 4th pin (8) to stretch out direction opposite.
6. bridge rectifier according to claim 1, it is characterized in that: described first pin (5), second pin (6), the 3rd pin (7) and the 4th pin (8) are in the outer part of plastic-sealed body (9) and all are bending-like, and the extension of four pins is in the same plane.
7. bridge rectifier according to claim 1 is characterized in that: under the condition that does not possess eutectic welding, the back side of described first rectification chip (1) by scolder welding or conductive adhesive on first Ji Dao of first pin (5) (5-1); The back side of second rectification chip (2) by scolder welding or conductive adhesive on second Ji Dao of second pin (6) (6-1); The back side of the 3rd rectification chip (3) by scolder welding or conductive adhesive on the 3rd Ji Dao of the 3rd pin (7) (7-1); The back side of the 4th rectification chip (4) by scolder welding or conductive adhesive on the 3rd Ji Dao of the 3rd pin (7) (7-1).
8. bridge rectifier according to claim 7 is characterized in that: the scolder of described scolder welding is a solder stick or for solder(ing) paste or for soldering tin bar or for solder ball or be solder powder.
CN201110032733XA 2011-01-30 2011-01-30 Bridge rectifier Pending CN102157480A (en)

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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105957853A (en) * 2016-06-21 2016-09-21 九江浩峰电子科技有限公司 Rectifier bridge welding structure and manufacturing technology thereof
CN108389854A (en) * 2018-05-03 2018-08-10 扬州虹扬科技发展有限公司 A kind of ultrathin miniature bridge rectifier
CN110600450A (en) * 2019-10-25 2019-12-20 山东晶导微电子股份有限公司 Lead frame for arranging chip, packaging body and power supply module
CN111180437A (en) * 2019-12-13 2020-05-19 上海晶丰明源半导体股份有限公司 Chip packaging structure adopting multi-base-island lead frame

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CN101551962A (en) * 2009-05-08 2009-10-07 常州银河世纪微电子有限公司 Full-color LED display device
CN201393177Y (en) * 2009-04-24 2010-01-27 常州银河世纪微电子有限公司 Rectification voltage stabilizer device
CN202050364U (en) * 2011-01-30 2011-11-23 常州银河世纪微电子有限公司 Bridge rectifier

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Publication number Priority date Publication date Assignee Title
CN201393177Y (en) * 2009-04-24 2010-01-27 常州银河世纪微电子有限公司 Rectification voltage stabilizer device
CN101551962A (en) * 2009-05-08 2009-10-07 常州银河世纪微电子有限公司 Full-color LED display device
CN202050364U (en) * 2011-01-30 2011-11-23 常州银河世纪微电子有限公司 Bridge rectifier

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CN105957853A (en) * 2016-06-21 2016-09-21 九江浩峰电子科技有限公司 Rectifier bridge welding structure and manufacturing technology thereof
CN108389854A (en) * 2018-05-03 2018-08-10 扬州虹扬科技发展有限公司 A kind of ultrathin miniature bridge rectifier
CN110600450A (en) * 2019-10-25 2019-12-20 山东晶导微电子股份有限公司 Lead frame for arranging chip, packaging body and power supply module
CN111180437A (en) * 2019-12-13 2020-05-19 上海晶丰明源半导体股份有限公司 Chip packaging structure adopting multi-base-island lead frame
CN111261626A (en) * 2019-12-13 2020-06-09 上海晶丰明源半导体股份有限公司 Chip packaging structure adopting multi-base-island lead frame

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Application publication date: 20110817