CN109054838A - 用于在半导体器件的制造过程中选择性除去氮化硅的蚀刻溶液 - Google Patents

用于在半导体器件的制造过程中选择性除去氮化硅的蚀刻溶液 Download PDF

Info

Publication number
CN109054838A
CN109054838A CN201810570790.5A CN201810570790A CN109054838A CN 109054838 A CN109054838 A CN 109054838A CN 201810570790 A CN201810570790 A CN 201810570790A CN 109054838 A CN109054838 A CN 109054838A
Authority
CN
China
Prior art keywords
etching solution
alcohol
glycol
ether
weight
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201810570790.5A
Other languages
English (en)
Chinese (zh)
Inventor
李翊嘉
刘文达
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Versum Materials US LLC
Original Assignee
Versum Materials US LLC
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Versum Materials US LLC filed Critical Versum Materials US LLC
Publication of CN109054838A publication Critical patent/CN109054838A/zh
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C09K13/04—Etching, surface-brightening or pickling compositions containing an inorganic acid
    • C09K13/06—Etching, surface-brightening or pickling compositions containing an inorganic acid with organic material
    • C—CHEMISTRY; METALLURGY
    • C03—GLASS; MINERAL OR SLAG WOOL
    • C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
    • C03C25/00—Surface treatment of fibres or filaments made from glass, minerals or slags
    • C03C25/66—Chemical treatment, e.g. leaching, acid or alkali treatment
    • C03C25/68—Chemical treatment, e.g. leaching, acid or alkali treatment by etching
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K13/00—Etching, surface-brightening or pickling compositions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/10—Etching compositions
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00—Etching metallic material by chemical means
    • C23F1/44—Compositions for etching metallic material from a metallic material substrate of different composition
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/28—Dry etching; Plasma etching; Reactive-ion etching of insulating materials
    • H10P50/282—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials
    • H10P50/283—Dry etching; Plasma etching; Reactive-ion etching of insulating materials of inorganic materials by chemical means
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/60—Wet etching
    • H10P50/64—Wet etching of semiconductor materials
    • H10P50/642—Chemical etching
    • H10P50/644—Anisotropic liquid etching
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P70/00—Cleaning of wafers, substrates or parts of devices
    • H10P70/10—Cleaning before device manufacture, i.e. Begin-Of-Line process
    • H10P70/12—Cleaning before device manufacture, i.e. Begin-Of-Line process by dry cleaning only
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass
    • H10P95/70—Chemical treatments

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Metallurgy (AREA)
  • Mechanical Engineering (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • General Life Sciences & Earth Sciences (AREA)
  • Geochemistry & Mineralogy (AREA)
  • Weting (AREA)
  • Cleaning Or Drying Semiconductors (AREA)
  • Detergent Compositions (AREA)
CN201810570790.5A 2017-06-05 2018-06-05 用于在半导体器件的制造过程中选择性除去氮化硅的蚀刻溶液 Pending CN109054838A (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
US201762515351P 2017-06-05 2017-06-05
US62/515,351 2017-06-05
US15/990,000 2018-05-25
US15/990,000 US11186771B2 (en) 2017-06-05 2018-05-25 Etching solution for selectively removing silicon nitride during manufacture of a semiconductor device

Publications (1)

Publication Number Publication Date
CN109054838A true CN109054838A (zh) 2018-12-21

Family

ID=62528355

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201810570790.5A Pending CN109054838A (zh) 2017-06-05 2018-06-05 用于在半导体器件的制造过程中选择性除去氮化硅的蚀刻溶液

Country Status (8)

Country Link
US (1) US11186771B2 (cg-RX-API-DMAC7.html)
EP (1) EP3422392B1 (cg-RX-API-DMAC7.html)
JP (2) JP7015214B2 (cg-RX-API-DMAC7.html)
KR (1) KR102141447B1 (cg-RX-API-DMAC7.html)
CN (1) CN109054838A (cg-RX-API-DMAC7.html)
IL (1) IL259799B2 (cg-RX-API-DMAC7.html)
SG (1) SG10201804769SA (cg-RX-API-DMAC7.html)
TW (1) TWI683037B (cg-RX-API-DMAC7.html)

Cited By (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110846040A (zh) * 2019-11-08 2020-02-28 湖北兴福电子材料有限公司 一种高容硅量磷酸基蚀刻液及其配制方法
CN110878208A (zh) * 2019-11-08 2020-03-13 湖北兴福电子材料有限公司 一种提高氮化硅蚀刻均匀性的酸性蚀刻液
CN111363550A (zh) * 2018-12-26 2020-07-03 上海新阳半导体材料股份有限公司 选择性刻蚀液组合物及其制备方法和应用
CN111836873A (zh) * 2018-04-11 2020-10-27 三星Sdi株式会社 氮化硅膜蚀刻组成物与使用其的蚀刻方法
CN113557287A (zh) * 2019-03-11 2021-10-26 弗萨姆材料美国有限责任公司 用于在半导体器件制造过程中选择性去除氮化硅的蚀刻溶液和方法
CN116218528A (zh) * 2022-12-08 2023-06-06 湖北兴福电子材料股份有限公司 一种高选择性且低泡的蚀刻液
CN117223092A (zh) * 2021-04-22 2023-12-12 花王株式会社 蚀刻液
CN119286526A (zh) * 2024-08-29 2025-01-10 湖北兴福电子材料股份有限公司 选择性蚀刻氮化硅及氮化钛的蚀刻液及其制备方法

Families Citing this family (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190051656A (ko) * 2017-11-07 2019-05-15 삼성전자주식회사 식각 조성물, 실리콘 질화막의 식각 방법, 및 반도체 소자의 제조 방법
US12134784B2 (en) 2018-11-02 2024-11-05 Public University Corporation Nagoya City University Method for preparing intestinal tract cell layer derived from pluripotent stem cell
EP3959291A4 (en) * 2019-03-11 2023-07-19 Versum Materials US, LLC ETCHING SOLUTION AND PROCESS FOR ALUMINUM NITRIDE
KR20220002555A (ko) * 2019-05-01 2022-01-06 후지필름 일렉트로닉 머티리얼스 유.에스.에이., 아이엔씨. 에칭 조성물
KR102803329B1 (ko) * 2019-08-29 2025-05-07 에스케이이노베이션 주식회사 식각 조성물, 이를 이용한 절연막의 식각방법 및 반도체 소자의 제조방법
KR102675055B1 (ko) * 2019-09-18 2024-06-12 오씨아이 주식회사 실리콘 질화막 식각 용액 및 이를 사용한 반도체 소자의 제조 방법
EP4041845A4 (en) 2019-10-09 2023-11-22 Entegris, Inc. WET ETCH COMPOSITION AND METHOD
KR102974325B1 (ko) * 2020-07-30 2026-06-09 엔테그리스, 아이엔씨. 질화규소 필름을 선택적으로 에칭하기 위한 조성물 및 방법
IL300758B1 (en) * 2020-08-24 2026-06-01 Basf Se Composition, use and process for selective burning of silicon-germanium material
KR102315919B1 (ko) * 2021-01-26 2021-10-22 연세대학교 산학협력단 비인산계 실리콘 질화막 식각 조성물 및 이를 이용한 식각방법
KR102325905B1 (ko) * 2021-03-22 2021-11-12 연세대학교 산학협력단 실리콘 질화막 식각 조성물 및 이를 이용한 식각방법
FR3122664B1 (fr) * 2021-05-05 2024-06-28 Dehon Composition de defluxage d’assemblages electroniques
KR20260004549A (ko) * 2021-05-26 2026-01-08 엔테그리스, 아이엔씨. 질화규소 막을 선택적으로 에칭하기 위한 조성물 및 방법
EP4098729A1 (en) * 2021-06-01 2022-12-07 Cipelia Non-flammable, volatile and aqueous cleaning composition
US12600909B2 (en) 2021-06-14 2026-04-14 Rasa Industries, Ltd. Etching solution composition
KR102782691B1 (ko) * 2021-11-10 2025-03-19 연세대학교 산학협력단 실리콘 질화막 식각 조성물 및 이를 이용한 식각방법
CN115353886B (zh) * 2022-08-31 2023-08-25 湖北兴福电子材料股份有限公司 一种磷酸基蚀刻液及其配制方法
JP2024055539A (ja) * 2022-10-07 2024-04-18 花王株式会社 エッチング液
JP7856788B2 (ja) 2022-12-08 2026-05-11 ラサ工業株式会社 エッチング液組成物
WO2025258498A1 (ja) * 2024-06-10 2025-12-18 ステラケミファ株式会社 微細加工処理剤、及び微細加工処理方法
US20260150612A1 (en) * 2024-11-27 2026-05-28 Applied Materials, Inc Surface conditioning processes for semiconductor processing chamber parts

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1426381A (zh) * 2000-04-28 2003-06-25 默克专利有限公司 用于无机表面的蚀刻糊
CN101605869A (zh) * 2006-12-21 2009-12-16 高级技术材料公司 选择性除去四氮化三硅的组合物和方法
TW201243030A (en) * 2011-04-20 2012-11-01 Applied Materials Inc Selective silicon nitride etch
CN103782373A (zh) * 2011-08-31 2014-05-07 林纯药工业株式会社 蚀刻液组合物以及蚀刻方法

Family Cites Families (20)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS4945452B1 (cg-RX-API-DMAC7.html) 1969-05-13 1974-12-04
JPS5640682B2 (cg-RX-API-DMAC7.html) 1972-02-01 1981-09-22
US4373656A (en) 1981-07-17 1983-02-15 Western Electric Company, Inc. Method of preserving the solderability of copper
US5472562A (en) 1994-08-05 1995-12-05 At&T Corp. Method of etching silicon nitride
US6162370A (en) 1998-08-28 2000-12-19 Ashland Inc. Composition and method for selectively etching a silicon nitride film
DE10150040A1 (de) * 2001-10-10 2003-04-17 Merck Patent Gmbh Kombinierte Ätz- und Dotiermedien
EP1536291A4 (en) * 2002-08-22 2008-08-06 Daikin Ind Ltd Removing solution
DE102005033724A1 (de) 2005-07-15 2007-01-18 Merck Patent Gmbh Druckfähige Ätzmedien für Siliziumdioxid-und Siliziumnitridschichten
JP4947654B2 (ja) * 2007-09-28 2012-06-06 シャープ株式会社 誘電体膜のパターニング方法
JP2010205839A (ja) * 2009-03-02 2010-09-16 Sharp Corp 半導体装置の製造方法
JP5699463B2 (ja) 2010-07-06 2015-04-08 東ソー株式会社 窒化ケイ素のエッチング液及びエッチング方法
JP2012033561A (ja) * 2010-07-28 2012-02-16 Sanyo Chem Ind Ltd 窒化ケイ素用エッチング液
JP2012099550A (ja) 2010-10-29 2012-05-24 Sanyo Chem Ind Ltd 窒化ケイ素用エッチング液
WO2012174518A2 (en) 2011-06-16 2012-12-20 Advanced Technology Materials, Inc. Compositions and methods for selectively etching silicon nitride
JP5490071B2 (ja) 2011-09-12 2014-05-14 株式会社東芝 エッチング方法
KR101782329B1 (ko) 2011-10-18 2017-09-28 삼성전자주식회사 식각용 조성물 및 이를 이용하는 반도체 기억 소자의 형성 방법
US9868902B2 (en) * 2014-07-17 2018-01-16 Soulbrain Co., Ltd. Composition for etching
KR20170009240A (ko) 2015-07-16 2017-01-25 동우 화인켐 주식회사 비불소계 실리콘 질화막 식각 조성물
KR102443370B1 (ko) 2015-11-20 2022-09-15 동우 화인켐 주식회사 실리콘 질화막 식각액 조성물
US10400167B2 (en) * 2015-11-25 2019-09-03 Versum Materials Us, Llc Etching compositions and methods for using same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1426381A (zh) * 2000-04-28 2003-06-25 默克专利有限公司 用于无机表面的蚀刻糊
CN101605869A (zh) * 2006-12-21 2009-12-16 高级技术材料公司 选择性除去四氮化三硅的组合物和方法
TW201243030A (en) * 2011-04-20 2012-11-01 Applied Materials Inc Selective silicon nitride etch
CN103782373A (zh) * 2011-08-31 2014-05-07 林纯药工业株式会社 蚀刻液组合物以及蚀刻方法

Cited By (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN111836873A (zh) * 2018-04-11 2020-10-27 三星Sdi株式会社 氮化硅膜蚀刻组成物与使用其的蚀刻方法
CN111836873B (zh) * 2018-04-11 2022-06-07 三星Sdi株式会社 用于氮化硅的蚀刻组成物与半导体元件的蚀刻方法
CN111363550A (zh) * 2018-12-26 2020-07-03 上海新阳半导体材料股份有限公司 选择性刻蚀液组合物及其制备方法和应用
CN113557287A (zh) * 2019-03-11 2021-10-26 弗萨姆材料美国有限责任公司 用于在半导体器件制造过程中选择性去除氮化硅的蚀刻溶液和方法
CN113557287B (zh) * 2019-03-11 2023-03-24 弗萨姆材料美国有限责任公司 用于在半导体器件制造过程中选择性去除氮化硅的蚀刻溶液和方法
CN110846040A (zh) * 2019-11-08 2020-02-28 湖北兴福电子材料有限公司 一种高容硅量磷酸基蚀刻液及其配制方法
CN110878208A (zh) * 2019-11-08 2020-03-13 湖北兴福电子材料有限公司 一种提高氮化硅蚀刻均匀性的酸性蚀刻液
CN117223092A (zh) * 2021-04-22 2023-12-12 花王株式会社 蚀刻液
CN116218528A (zh) * 2022-12-08 2023-06-06 湖北兴福电子材料股份有限公司 一种高选择性且低泡的蚀刻液
CN119286526A (zh) * 2024-08-29 2025-01-10 湖北兴福电子材料股份有限公司 选择性蚀刻氮化硅及氮化钛的蚀刻液及其制备方法

Also Published As

Publication number Publication date
IL259799B2 (en) 2024-01-01
JP2021132212A (ja) 2021-09-09
KR102141447B1 (ko) 2020-08-05
JP7015214B2 (ja) 2022-02-02
TWI683037B (zh) 2020-01-21
SG10201804769SA (en) 2019-01-30
US20180346811A1 (en) 2018-12-06
TW201903207A (zh) 2019-01-16
KR20180133226A (ko) 2018-12-13
IL259799B1 (en) 2023-09-01
JP2018207108A (ja) 2018-12-27
EP3422392A1 (en) 2019-01-02
US11186771B2 (en) 2021-11-30
EP3422392B1 (en) 2021-07-21
IL259799A (en) 2018-07-31

Similar Documents

Publication Publication Date Title
TWI683037B (zh) 於製造一半導體裝置時用於選擇性移除矽氮化物的蝕刻溶液
US11124741B2 (en) Ceria removal compositions
TWI573867B (zh) 具有高ｗｎ／ｗ蝕刻選擇性的剝除組合物
CN113950520B (zh) 在半导体器件制造期间相对于p-掺杂硅和硅-锗选择性去除多晶硅的液体组合物
EP3938465B1 (en) Etching solution and method for selectively removing silicon nitride during manufacture of a semiconductor device
CN112771144A (zh) 用于铈粒子的化学机械研磨后(post cmp)清洁组合物
JP7695316B2 (ja) 半導体素子製造時に窒化ケイ素を選択的に除去するためのエッチング組成物及びエッチング方法
KR102799406B1 (ko) 산화하프늄 부식 억제제
KR20100091974A (ko) 손상 없이 반도체를 습식 세척하기 위한 높은 네거티브 제타 전위 다면체 실세스퀴옥산 조성물과 방법
US11929257B2 (en) Etching solution and method for aluminum nitride
JP2025517471A (ja) ポリシリコンエッチング用に配合されたアルカリ化学物質

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication

Application publication date: 20181221

RJ01 Rejection of invention patent application after publication