CN109037312B - 一种带有屏蔽栅的超结igbt及其制造方法 - Google Patents
一种带有屏蔽栅的超结igbt及其制造方法 Download PDFInfo
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- CN109037312B CN109037312B CN201810968433.4A CN201810968433A CN109037312B CN 109037312 B CN109037312 B CN 109037312B CN 201810968433 A CN201810968433 A CN 201810968433A CN 109037312 B CN109037312 B CN 109037312B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 44
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract description 68
- 239000004065 semiconductor Substances 0.000 claims abstract description 29
- 239000000758 substrate Substances 0.000 claims abstract description 28
- 229920002120 photoresistant polymer Polymers 0.000 claims description 57
- 229920005591 polysilicon Polymers 0.000 claims description 49
- 239000002184 metal Substances 0.000 claims description 48
- 239000012535 impurity Substances 0.000 claims description 39
- 238000001259 photo etching Methods 0.000 claims description 36
- 238000005530 etching Methods 0.000 claims description 27
- 238000000151 deposition Methods 0.000 claims description 25
- 238000000137 annealing Methods 0.000 claims description 17
- 238000002347 injection Methods 0.000 claims description 10
- 239000007924 injection Substances 0.000 claims description 10
- 238000002161 passivation Methods 0.000 claims description 10
- 239000002210 silicon-based material Substances 0.000 claims description 10
- 238000003860 storage Methods 0.000 claims description 9
- 230000008021 deposition Effects 0.000 claims description 6
- 238000001039 wet etching Methods 0.000 claims description 6
- 230000001413 cellular effect Effects 0.000 claims description 4
- 230000008020 evaporation Effects 0.000 claims description 3
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- 238000004544 sputter deposition Methods 0.000 claims description 3
- 230000000873 masking effect Effects 0.000 claims description 2
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- 238000000034 method Methods 0.000 description 8
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 6
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 5
- 229910052796 boron Inorganic materials 0.000 description 5
- 238000000605 extraction Methods 0.000 description 4
- 229910052581 Si3N4 Inorganic materials 0.000 description 3
- 239000000969 carrier Substances 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 239000000377 silicon dioxide Substances 0.000 description 3
- 235000012239 silicon dioxide Nutrition 0.000 description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 239000005380 borophosphosilicate glass Substances 0.000 description 2
- 238000001312 dry etching Methods 0.000 description 2
- 239000005360 phosphosilicate glass Substances 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
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- OAICVXFJPJFONN-UHFFFAOYSA-N Phosphorus Chemical group [P] OAICVXFJPJFONN-UHFFFAOYSA-N 0.000 description 1
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Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/70—Bipolar devices
- H01L29/72—Transistor-type devices, i.e. able to continuously respond to applied control signals
- H01L29/739—Transistor-type devices, i.e. able to continuously respond to applied control signals controlled by field-effect, e.g. bipolar static induction transistors [BSIT]
- H01L29/7393—Insulated gate bipolar mode transistors, i.e. IGBT; IGT; COMFET
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
- H01L29/063—Reduced surface field [RESURF] pn-junction structures
- H01L29/0634—Multiple reduced surface field (multi-RESURF) structures, e.g. double RESURF, charge compensation, cool, superjunction (SJ), 3D-RESURF, composite buffer (CB) structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66234—Bipolar junction transistors [BJT]
- H01L29/66325—Bipolar junction transistors [BJT] controlled by field-effect, e.g. insulated gate bipolar transistors [IGBT]
- H01L29/66333—Vertical insulated gate bipolar transistors
- H01L29/66348—Vertical insulated gate bipolar transistors with a recessed gate
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Composite Materials (AREA)
- Manufacturing & Machinery (AREA)
- Electrodes Of Semiconductors (AREA)
- Element Separation (AREA)
Abstract
Description
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CN109037312A CN109037312A (zh) | 2018-12-18 |
CN109037312B true CN109037312B (zh) | 2024-04-09 |
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Families Citing this family (10)
Publication number | Priority date | Publication date | Assignee | Title |
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CN110416305B (zh) * | 2019-06-27 | 2021-01-08 | 南京芯舟科技有限公司 | 元胞结构及其应用的半导体器件 |
CN112447822A (zh) * | 2019-09-03 | 2021-03-05 | 苏州东微半导体股份有限公司 | 一种半导体功率器件 |
CN111384153A (zh) * | 2020-03-20 | 2020-07-07 | 电子科技大学 | 一种具有接地p型区的sgt器件及其制备方法 |
CN111584365B (zh) * | 2020-04-29 | 2024-01-30 | 北京时代民芯科技有限公司 | 一种低米勒电容槽栅vdmos器件制造方法 |
EP4220733A4 (en) * | 2020-09-24 | 2024-04-03 | Byd Semiconductor Company Ltd | SEMICONDUCTOR CELL STRUCTURE, IGBT CELL STRUCTURE AND MANUFACTURING METHOD THEREFOR AND SEMICONDUCTOR STRUCTURE |
CN112670335A (zh) * | 2020-12-30 | 2021-04-16 | 无锡紫光微电子有限公司 | 多次外延制作超结屏蔽栅结构igbt及制造方法 |
CN113838916B (zh) * | 2021-09-23 | 2023-05-26 | 电子科技大学 | 一种具有pmos电流嵌位的分离栅cstbt及其制作方法 |
CN113838921B (zh) * | 2021-09-23 | 2023-04-25 | 电子科技大学 | 一种三维沟槽电荷存储型igbt及其制作方法 |
CN113838918B (zh) * | 2021-09-23 | 2023-10-24 | 电子科技大学 | 具有载流子浓度增强的超结igbt器件结构及制作方法 |
CN115064584B (zh) * | 2022-08-15 | 2022-10-25 | 无锡新洁能股份有限公司 | 一种具有载流子存储层的沟槽栅igbt器件 |
Citations (8)
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CN102263133A (zh) * | 2011-08-22 | 2011-11-30 | 无锡新洁能功率半导体有限公司 | 低栅极电荷低导通电阻深沟槽功率mosfet器件及其制造方法 |
CN202205755U (zh) * | 2011-07-26 | 2012-04-25 | 无锡新洁能功率半导体有限公司 | 具有超结结构的平面型功率mosfet器件 |
CN104051509A (zh) * | 2013-03-14 | 2014-09-17 | 万国半导体股份有限公司 | 带有掩埋浮动p-型屏蔽的新型双栅极沟槽igbt |
CN105914230A (zh) * | 2016-05-06 | 2016-08-31 | 张家港凯思半导体有限公司 | 一种超低功耗半导体功率器件及制备方法 |
CN105957896A (zh) * | 2016-06-24 | 2016-09-21 | 上海华虹宏力半导体制造有限公司 | 超结功率器件及其制造方法 |
CN107994069A (zh) * | 2017-12-29 | 2018-05-04 | 安徽赛腾微电子有限公司 | 一种igbt器件及其制造方法 |
CN108183130A (zh) * | 2017-12-27 | 2018-06-19 | 电子科技大学 | 带有p型埋层的双栅载流子储存性igbt器件 |
CN208674122U (zh) * | 2018-08-23 | 2019-03-29 | 惠州市乾野微纳电子有限公司 | 一种带有屏蔽栅的超结igbt |
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US20070181927A1 (en) * | 2006-02-03 | 2007-08-09 | Yedinak Joseph A | Charge balance insulated gate bipolar transistor |
JP4416007B2 (ja) * | 2007-05-17 | 2010-02-17 | 株式会社デンソー | 半導体装置 |
US8476676B2 (en) * | 2011-01-20 | 2013-07-02 | Alpha And Omega Semiconductor Incorporated | Trench poly ESD formation for trench MOS and SGT |
WO2016014224A1 (en) * | 2014-07-25 | 2016-01-28 | United Silicon Carbide, Inc. | Self-aligned shielded-gate trench mos-controlled silicon carbide switch with reduced miller capacitance and method of manufacturing the same |
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CN202205755U (zh) * | 2011-07-26 | 2012-04-25 | 无锡新洁能功率半导体有限公司 | 具有超结结构的平面型功率mosfet器件 |
CN102263133A (zh) * | 2011-08-22 | 2011-11-30 | 无锡新洁能功率半导体有限公司 | 低栅极电荷低导通电阻深沟槽功率mosfet器件及其制造方法 |
CN104051509A (zh) * | 2013-03-14 | 2014-09-17 | 万国半导体股份有限公司 | 带有掩埋浮动p-型屏蔽的新型双栅极沟槽igbt |
CN105914230A (zh) * | 2016-05-06 | 2016-08-31 | 张家港凯思半导体有限公司 | 一种超低功耗半导体功率器件及制备方法 |
CN105957896A (zh) * | 2016-06-24 | 2016-09-21 | 上海华虹宏力半导体制造有限公司 | 超结功率器件及其制造方法 |
CN108183130A (zh) * | 2017-12-27 | 2018-06-19 | 电子科技大学 | 带有p型埋层的双栅载流子储存性igbt器件 |
CN107994069A (zh) * | 2017-12-29 | 2018-05-04 | 安徽赛腾微电子有限公司 | 一种igbt器件及其制造方法 |
CN208674122U (zh) * | 2018-08-23 | 2019-03-29 | 惠州市乾野微纳电子有限公司 | 一种带有屏蔽栅的超结igbt |
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