CN108987289A - 一种双面塑封锡球制程方法 - Google Patents

一种双面塑封锡球制程方法 Download PDF

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Publication number
CN108987289A
CN108987289A CN201810652483.1A CN201810652483A CN108987289A CN 108987289 A CN108987289 A CN 108987289A CN 201810652483 A CN201810652483 A CN 201810652483A CN 108987289 A CN108987289 A CN 108987289A
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何正鸿
黄浈
柳燕华
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JCET Group Co Ltd
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Jiangsu Changjiang Electronics Technology Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/56—Encapsulations, e.g. encapsulation layers, coatings
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/85—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

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  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Encapsulation Of And Coatings For Semiconductor Or Solid State Devices (AREA)

Abstract

本发明涉及一种双面塑封锡球制程方法，它包括以下步骤：步骤一、基板正面芯片装片、打线以及基板正面塑封；步骤二、基板背面芯片装片、打线以及基板背面塑封，下模组上设置有多个模组伸缩凸块，注塑前控制下模组的伸缩凸块伸出至接触到基板背面植球的焊垫区域，注塑完成后伸缩凸块开始回缩，形成塑封体通孔；步骤三、使用锡膏灌入塑封体通孔内，通过回流焊固化形成锡球；步骤四、将基板切成单颗产品。本发明一种双面塑封锡球制程方法，它能够解决传统基板双面封装基板背面锡球，使用激光开槽将锡球露出时容易损坏锡球的问题。

Description

一种双面塑封锡球制程方法
技术领域
本发明涉及一种双面塑封锡球制程方法，属于半导体封装技术领域。
背景技术
传统双面塑塑封锡球基本制作方法(如图1所示)：
先进行基板正面芯片装片以及基板正面塑封体2后，再进行基板背面植入锡球，通过回流焊固化锡球后，再进行基板背面芯片装片以及基板背面包封，完成基板背面包封后，在使用激光开槽4去除基板背面塑封体1，露出锡球3。再将基板切成单颗，完成封装制程。
上述传统工艺方法的缺点：基板完成背面塑封体1后，需要使用激光开槽4将表面锡球3漏出，激光开槽4时，容易损坏锡球3，影响产品上板测试。
发明内容
本发明所要解决的技术问题是针对上述现有技术提供一种双面塑封锡球制程方法，它能够解决传统基板双面封装基板背面锡球，使用激光开槽将锡球露出时容易损坏锡球的问题。
本发明解决上述问题所采用的技术方案为：一种双面塑封锡球制程方法，所述方法包括以下步骤：
步骤一、基板正面芯片装片、打线以及基板正面塑封；
步骤二、基板背面芯片装片、打线以及基板背面塑封，下模组上设置有多个伸缩凸块，注塑前控制下模组的伸缩凸块伸长至接触到基板背面植球的焊垫区域，注塑完成后模具伸缩凸块开始回缩，形成塑封体通孔；
步骤三、使用锡膏灌入塑封体通孔内，通过回流焊固化形成锡球；
步骤四、将基板切成单颗产品。
与现有技术相比，本发明的优点在于：
本发明一种双面塑封锡球制程方法，基板背面塑封时，使用伸缩凸块顶住基板上需要值球的焊垫，塑封时，预留出塑封体通孔，再进行塑封体通孔灌入锡膏，回流固化后得到基板背面的锡球，能有效解决传统工艺中锡球破裂问题。
附图说明
图1为传统双面塑塑封锡球基本制作方法的示意图。
图2、图3为本发明一种双面塑封锡球制程方法的示意图。
其中：
背面塑封体1
正面塑封体2
锡球3
激光开槽4
焊垫区域5
伸缩凸块6
塑封体通孔7。
具体实施方式
以下结合附图实施例对本发明作进一步详细描述。
如图2、图3所示，本实施例中的一种双面塑封锡球制程方法，它包括以下步骤：
步骤一、基板正面芯片装片、打线以及完成基板正面塑封体2；
步骤二、基板背面芯片装片、打线，将基板正面朝上放置于下模组上，下模组上设置有多个伸缩凸块6，注塑前控制下模组的伸缩凸块6伸出至接触到基板背面植球的焊垫区域5，然后进行注塑，完成基板背面塑封体1，注塑完成后伸缩凸块6开始回缩，形成塑封体通孔6；
步骤三、使用锡膏灌入塑封体通孔6内，通过回流焊固化形成锡球；
步骤四、将基板切成单颗产品。
除上述实施例外，本发明还包括有其他实施方式，凡采用等同变换或者等效替换方式形成的技术方案，均应落入本发明权利要求的保护范围之内。

Claims (1)

1.一种双面塑封锡球制程方法，其特征在于所述方法包括以下步骤：
步骤一、基板正面芯片装片、打线以及基板正面塑封；
步骤二、基板背面芯片装片、打线以及基板背面塑封，下模组上设置有多个伸缩凸块，注塑前控制下模组的伸缩凸块伸出至接触到基板背面植球的焊垫区域，注塑完成后伸缩凸块开始回缩，形成塑封体通孔；
步骤三、使用锡膏灌入塑封体通孔内，通过回流焊固化形成锡球；
步骤四、将基板切成单颗产品。
CN201810652483.1A 2018-06-22 2018-06-22 一种双面塑封锡球制程方法 Withdrawn CN108987289A (zh)

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Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110335824A (zh) * 2019-05-24 2019-10-15 江苏长电科技股份有限公司 一种双面封装的工艺方法
CN115023056A (zh) * 2022-05-30 2022-09-06 青岛歌尔微电子研究院有限公司 封装产品的选择性封装方法
CN115863304A (zh) * 2023-02-07 2023-03-28 北京唯捷创芯精测科技有限责任公司 双面塑封的封装结构、封装方法、电路结构及电子设备

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102203927A (zh) * 2011-06-22 2011-09-28 华为终端有限公司 一种器件塑封的方法及其封装结构
CN102468190A (zh) * 2010-11-12 2012-05-23 三星半导体(中国)研究开发有限公司 一种封装模具及使用该模具的半导体封装工艺

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN102468190A (zh) * 2010-11-12 2012-05-23 三星半导体(中国)研究开发有限公司 一种封装模具及使用该模具的半导体封装工艺
CN102203927A (zh) * 2011-06-22 2011-09-28 华为终端有限公司 一种器件塑封的方法及其封装结构

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110335824A (zh) * 2019-05-24 2019-10-15 江苏长电科技股份有限公司 一种双面封装的工艺方法
CN115023056A (zh) * 2022-05-30 2022-09-06 青岛歌尔微电子研究院有限公司 封装产品的选择性封装方法
CN115863304A (zh) * 2023-02-07 2023-03-28 北京唯捷创芯精测科技有限责任公司 双面塑封的封装结构、封装方法、电路结构及电子设备

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Application publication date: 20181211