CN108963035B - 一种带侧面保护的cob封装光电芯片的制作方法 - Google Patents
一种带侧面保护的cob封装光电芯片的制作方法 Download PDFInfo
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- CN108963035B CN108963035B CN201810852515.2A CN201810852515A CN108963035B CN 108963035 B CN108963035 B CN 108963035B CN 201810852515 A CN201810852515 A CN 201810852515A CN 108963035 B CN108963035 B CN 108963035B
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 14
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 30
- 238000000034 method Methods 0.000 claims abstract description 21
- 239000003292 glue Substances 0.000 claims abstract description 14
- 229910052751 metal Inorganic materials 0.000 claims description 34
- 239000002184 metal Substances 0.000 claims description 34
- 239000000853 adhesive Substances 0.000 claims description 30
- 230000001070 adhesive effect Effects 0.000 claims description 30
- 229920005989 resin Polymers 0.000 claims description 17
- 239000011347 resin Substances 0.000 claims description 17
- 239000000565 sealant Substances 0.000 claims description 15
- 238000009413 insulation Methods 0.000 claims description 12
- 238000002347 injection Methods 0.000 claims description 9
- 239000007924 injection Substances 0.000 claims description 9
- 230000005693 optoelectronics Effects 0.000 claims description 9
- 229910052709 silver Inorganic materials 0.000 claims description 9
- 239000004332 silver Substances 0.000 claims description 9
- 239000003822 epoxy resin Substances 0.000 claims description 8
- 229920000647 polyepoxide Polymers 0.000 claims description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims description 6
- 239000007788 liquid Substances 0.000 claims description 5
- 238000010438 heat treatment Methods 0.000 claims description 3
- 229910052757 nitrogen Inorganic materials 0.000 claims description 3
- 230000000149 penetrating effect Effects 0.000 claims description 3
- 239000011241 protective layer Substances 0.000 claims description 2
- 230000011218 segmentation Effects 0.000 claims description 2
- 229910052710 silicon Inorganic materials 0.000 abstract description 6
- 239000010703 silicon Substances 0.000 abstract description 6
- NMWSKOLWZZWHPL-UHFFFAOYSA-N 3-chlorobiphenyl Chemical compound ClC1=CC=CC(C=2C=CC=CC=2)=C1 NMWSKOLWZZWHPL-UHFFFAOYSA-N 0.000 description 7
- 101001082832 Saccharomyces cerevisiae (strain ATCC 204508 / S288c) Pyruvate carboxylase 2 Proteins 0.000 description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 5
- 238000001514 detection method Methods 0.000 description 4
- 238000004806 packaging method and process Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 2
- 230000004075 alteration Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000007547 defect Effects 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 238000000608 laser ablation Methods 0.000 description 1
- 239000010410 layer Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 239000000047 product Substances 0.000 description 1
- 239000013589 supplement Substances 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1876—Particular processes or apparatus for batch treatment of the devices
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0203—Containers; Encapsulations, e.g. encapsulation of photodiodes
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Light Receiving Elements (AREA)
Abstract
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Priority Applications (1)
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CN201810852515.2A CN108963035B (zh) | 2018-07-30 | 2018-07-30 | 一种带侧面保护的cob封装光电芯片的制作方法 |
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CN201810852515.2A CN108963035B (zh) | 2018-07-30 | 2018-07-30 | 一种带侧面保护的cob封装光电芯片的制作方法 |
Publications (2)
Publication Number | Publication Date |
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CN108963035A CN108963035A (zh) | 2018-12-07 |
CN108963035B true CN108963035B (zh) | 2020-04-03 |
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CN201810852515.2A Active CN108963035B (zh) | 2018-07-30 | 2018-07-30 | 一种带侧面保护的cob封装光电芯片的制作方法 |
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Families Citing this family (4)
Publication number | Priority date | Publication date | Assignee | Title |
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CN112103275B (zh) * | 2019-05-30 | 2022-04-12 | 上海新微技术研发中心有限公司 | 硅光模块的封装方法及硅光模块 |
CN112788861B (zh) * | 2019-11-07 | 2022-06-17 | 重庆方正高密电子有限公司 | 印制电路板检修台 |
CN112911810B (zh) * | 2021-01-19 | 2023-04-25 | 潍坊歌尔微电子有限公司 | Pcb的切割方法及传感器封装结构 |
CN113764546A (zh) * | 2021-08-30 | 2021-12-07 | 东莞市中麒光电技术有限公司 | 一种Mini-LED器件、LED显示模块及其制作方法 |
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KR100610144B1 (ko) * | 2004-11-03 | 2006-08-09 | 삼성전자주식회사 | 플립 칩 조립 구조를 가지는 칩-온-보드 패키지의 제조 방법 |
TWI266441B (en) * | 2005-10-26 | 2006-11-11 | Lustrous Technology Ltd | COB-typed LED package with phosphor |
JP2008091357A (ja) * | 2006-09-29 | 2008-04-17 | Oki Electric Ind Co Ltd | 半導体装置及びその製造方法 |
CN103117231A (zh) * | 2011-11-16 | 2013-05-22 | 美新半导体(无锡)有限公司 | 晶圆级封装方法及其封装结构 |
CN105140184B (zh) * | 2015-07-30 | 2017-11-21 | 常州银河世纪微电子股份有限公司 | 芯片级封装方法 |
CN105845745B (zh) * | 2016-04-11 | 2017-06-16 | 北京师范大学 | 一种硅光电倍增器、其封装结构及封装方法 |
WO2018133057A1 (zh) * | 2017-01-22 | 2018-07-26 | 深圳市汇顶科技股份有限公司 | 晶圆级芯片的封装方法及封装体 |
CN106876356B (zh) * | 2017-03-09 | 2020-04-17 | 华天科技(昆山)电子有限公司 | 芯片嵌入硅基式扇出型封装结构及其制作方法 |
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Effective date of registration: 20240117 Address after: 518000, Building B, 1004-3, Kangjia Guangming Technology Center, No. 288 Xingxin Road, Dongzhou Community, Guangming Street, Guangming District, Shenzhen, Guangdong Province Patentee after: Shenzhen Honghe New Materials Co.,Ltd. Address before: No. 1501, Mount Huangshan Avenue, Bengbu, Anhui 233000 (Anhui University of Science and Technology (Longhu Campus) Patentee before: ANHUI SCIENCE AND TECHNOLOGY University |
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Address after: 518000, Building B, 1004-3, Kangjia Guangming Technology Center, No. 288 Xingxin Road, Dongzhou Community, Guangming Street, Guangming District, Shenzhen, Guangdong Province Patentee after: Shenzhen Honghe Intelligent Control Technology Co.,Ltd. Country or region after: China Address before: 518000, Building B, 1004-3, Kangjia Guangming Technology Center, No. 288 Xingxin Road, Dongzhou Community, Guangming Street, Guangming District, Shenzhen, Guangdong Province Patentee before: Shenzhen Honghe New Materials Co.,Ltd. Country or region before: China |