CN108885893B - 阻变存储器 - Google Patents
阻变存储器 Download PDFInfo
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- CN108885893B CN108885893B CN201680033285.6A CN201680033285A CN108885893B CN 108885893 B CN108885893 B CN 108885893B CN 201680033285 A CN201680033285 A CN 201680033285A CN 108885893 B CN108885893 B CN 108885893B
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1673—Reading or sensing circuits or methods
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/14—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements
- G11C11/15—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using thin-film elements using multiple magnetic layers
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/161—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect details concerning the memory cell structure, e.g. the layers of the ferromagnetic memory cell
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1653—Address circuits or decoders
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1653—Address circuits or decoders
- G11C11/1655—Bit-line or column circuits
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/02—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements
- G11C11/16—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using magnetic elements using elements in which the storage effect is based on magnetic spin effect
- G11C11/165—Auxiliary circuits
- G11C11/1653—Address circuits or decoders
- G11C11/1657—Word-line or row circuits
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0023—Address circuits or decoders
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0023—Address circuits or decoders
- G11C13/0026—Bit-line or column circuits
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C13/00—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00
- G11C13/0002—Digital stores characterised by the use of storage elements not covered by groups G11C11/00, G11C23/00, or G11C25/00 using resistive RAM [RRAM] elements
- G11C13/0021—Auxiliary circuits
- G11C13/0023—Address circuits or decoders
- G11C13/0028—Word-line or row circuits
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C5/00—Details of stores covered by group G11C11/00
- G11C5/06—Arrangements for interconnecting storage elements electrically, e.g. by wiring
- G11C5/063—Voltage and signal distribution in integrated semi-conductor memory access lines, e.g. word-line, bit-line, cross-over resistance, propagation delay
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/08—Word line control circuits, e.g. drivers, boosters, pull-up circuits, pull-down circuits, precharging circuits, for word lines
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C8/00—Arrangements for selecting an address in a digital store
- G11C8/12—Group selection circuits, e.g. for memory block selection, chip selection, array selection
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B61/00—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices
- H10B61/20—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors
- H10B61/22—Magnetic memory devices, e.g. magnetoresistive RAM [MRAM] devices comprising components having three or more electrodes, e.g. transistors of the field-effect transistor [FET] type
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/30—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices comprising selection components having three or more electrodes, e.g. transistors
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- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B63/00—Resistance change memory devices, e.g. resistive RAM [ReRAM] devices
- H10B63/80—Arrangements comprising multiple bistable or multi-stable switching components of the same type on a plane parallel to the substrate, e.g. cross-point arrays
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N50/00—Galvanomagnetic devices
- H10N50/10—Magnetoresistive devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/011—Manufacture or treatment of multistable switching devices
- H10N70/061—Patterning of the switching material
- H10N70/063—Patterning of the switching material by etching of pre-deposited switching material layers, e.g. lithography
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/20—Multistable switching devices, e.g. memristors
- H10N70/231—Multistable switching devices, e.g. memristors based on solid-state phase change, e.g. between amorphous and crystalline phases, Ovshinsky effect
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N70/00—Solid-state devices without a potential-jump barrier or surface barrier, and specially adapted for rectifying, amplifying, oscillating or switching
- H10N70/801—Constructional details of multistable switching devices
- H10N70/821—Device geometry
- H10N70/826—Device geometry adapted for essentially vertical current flow, e.g. sandwich or pillar type devices
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- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/79—Array wherein the access device being a transistor
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C2213/00—Indexing scheme relating to G11C13/00 for features not covered by this group
- G11C2213/70—Resistive array aspects
- G11C2213/82—Array having, for accessing a cell, a word line, a bit line and a plate or source line receiving different potentials
Abstract
Description
Claims (20)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US201562173779P | 2015-06-10 | 2015-06-10 | |
US62/173,779 | 2015-06-10 | ||
PCT/IB2016/051435 WO2016198965A1 (en) | 2015-06-10 | 2016-03-14 | Resistance change memory |
Publications (2)
Publication Number | Publication Date |
---|---|
CN108885893A CN108885893A (zh) | 2018-11-23 |
CN108885893B true CN108885893B (zh) | 2022-05-06 |
Family
ID=57504843
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201680033285.6A Active CN108885893B (zh) | 2015-06-10 | 2016-03-14 | 阻变存储器 |
Country Status (6)
Country | Link |
---|---|
US (1) | US10311929B2 (zh) |
JP (1) | JP6462902B2 (zh) |
CN (1) | CN108885893B (zh) |
RU (1) | RU2702271C2 (zh) |
TW (1) | TWI627772B (zh) |
WO (1) | WO2016198965A1 (zh) |
Families Citing this family (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP2018129109A (ja) * | 2017-02-10 | 2018-08-16 | 東芝メモリ株式会社 | 磁気メモリ装置 |
SE542243C2 (sv) * | 2017-03-17 | 2020-03-24 | Komatsu Forest Ab | Fjädringsanordning för bandgående fordon |
JP2020004136A (ja) * | 2018-06-28 | 2020-01-09 | 株式会社リコー | 半導体集積回路および電源供給装置 |
US11139300B2 (en) * | 2019-11-20 | 2021-10-05 | Intel Corporation | Three-dimensional memory arrays with layer selector transistors |
RU2746237C1 (ru) * | 2020-06-30 | 2021-04-09 | Общество С Ограниченной Ответственностью "Крокус Наноэлектроника" (Ооо "Крокус Наноэлектроника") | Способ и система чтения состояния ячейки магниторезистивной памяти с переносом спина stt-mram |
JP2022136786A (ja) * | 2021-03-08 | 2022-09-21 | キオクシア株式会社 | 不揮発性記憶装置 |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7023080B2 (en) * | 2000-11-30 | 2006-04-04 | Fujitsu Limited | Semiconductor integrated circuit with dummy patterns |
JP2006303150A (ja) * | 2005-04-20 | 2006-11-02 | Nippon Telegr & Teleph Corp <Ntt> | メモリ装置 |
CN101676931A (zh) * | 2004-10-18 | 2010-03-24 | 株式会社半导体能源研究所 | 半导体器件以及防止用户伪造物体的方法 |
JP2012204399A (ja) * | 2011-03-23 | 2012-10-22 | Toshiba Corp | 抵抗変化メモリ |
CN103415888A (zh) * | 2011-03-23 | 2013-11-27 | 株式会社东芝 | 电阻变化存储器 |
CN104659203A (zh) * | 2013-11-21 | 2015-05-27 | 华邦电子股份有限公司 | 电阻式存储元件及其操作方法 |
Family Cites Families (12)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP5019681B2 (ja) | 2001-04-26 | 2012-09-05 | ルネサスエレクトロニクス株式会社 | 薄膜磁性体記憶装置 |
JP5355666B2 (ja) | 2001-04-26 | 2013-11-27 | ルネサスエレクトロニクス株式会社 | 薄膜磁性体記憶装置 |
JP4863151B2 (ja) | 2003-06-23 | 2012-01-25 | 日本電気株式会社 | 磁気ランダム・アクセス・メモリとその製造方法 |
JP4192060B2 (ja) * | 2003-09-12 | 2008-12-03 | シャープ株式会社 | 不揮発性半導体記憶装置 |
US7339814B2 (en) * | 2005-08-24 | 2008-03-04 | Infineon Technologies Ag | Phase change memory array having equalized resistance |
JP4344372B2 (ja) * | 2006-08-22 | 2009-10-14 | シャープ株式会社 | 半導体記憶装置及びその駆動方法 |
JP2009194210A (ja) | 2008-02-15 | 2009-08-27 | Renesas Technology Corp | 半導体装置及び半導体装置の製造方法 |
JP5221222B2 (ja) * | 2008-06-25 | 2013-06-26 | 株式会社東芝 | 半導体記憶装置 |
JP5502635B2 (ja) * | 2010-03-08 | 2014-05-28 | 株式会社東芝 | 半導体記憶装置 |
JP5589577B2 (ja) * | 2010-06-10 | 2014-09-17 | ソニー株式会社 | 抵抗変化型メモリデバイス |
RU2522714C2 (ru) * | 2012-08-09 | 2014-07-20 | Федеральное государственное унитарное предприятие федеральный научно-производственный центр "Научно-исследовательский институт измерительных систем им. Ю.Е. Седакова" | Способ формирования магниторезистивного элемента памяти на основе туннельного перехода и его структура |
US9741434B2 (en) * | 2013-03-22 | 2017-08-22 | SK Hynix Inc. | Resistance change memory |
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2016
- 2016-03-14 JP JP2017559045A patent/JP6462902B2/ja active Active
- 2016-03-14 RU RU2018100097A patent/RU2702271C2/ru active
- 2016-03-14 WO PCT/IB2016/051435 patent/WO2016198965A1/en active Application Filing
- 2016-03-14 CN CN201680033285.6A patent/CN108885893B/zh active Active
- 2016-03-15 TW TW105107960A patent/TWI627772B/zh active
-
2017
- 2017-12-08 US US15/835,988 patent/US10311929B2/en active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7023080B2 (en) * | 2000-11-30 | 2006-04-04 | Fujitsu Limited | Semiconductor integrated circuit with dummy patterns |
CN101676931A (zh) * | 2004-10-18 | 2010-03-24 | 株式会社半导体能源研究所 | 半导体器件以及防止用户伪造物体的方法 |
JP2006303150A (ja) * | 2005-04-20 | 2006-11-02 | Nippon Telegr & Teleph Corp <Ntt> | メモリ装置 |
JP2012204399A (ja) * | 2011-03-23 | 2012-10-22 | Toshiba Corp | 抵抗変化メモリ |
CN103415888A (zh) * | 2011-03-23 | 2013-11-27 | 株式会社东芝 | 电阻变化存储器 |
CN104659203A (zh) * | 2013-11-21 | 2015-05-27 | 华邦电子股份有限公司 | 电阻式存储元件及其操作方法 |
Also Published As
Publication number | Publication date |
---|---|
WO2016198965A1 (en) | 2016-12-15 |
RU2702271C2 (ru) | 2019-10-07 |
RU2018100097A3 (zh) | 2019-07-17 |
CN108885893A (zh) | 2018-11-23 |
JP2018521500A (ja) | 2018-08-02 |
JP6462902B2 (ja) | 2019-01-30 |
US10311929B2 (en) | 2019-06-04 |
US20180102156A1 (en) | 2018-04-12 |
RU2018100097A (ru) | 2019-07-11 |
TWI627772B (zh) | 2018-06-21 |
TW201644081A (zh) | 2016-12-16 |
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PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
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CB02 | Change of applicant information | ||
CB02 | Change of applicant information |
Address after: Tokyo, Japan Applicant after: Kaixia Co.,Ltd. Applicant after: SK Hynix Address before: Tokyo, Japan Applicant before: TOSHIBA MEMORY Corp. Applicant before: SK Hynix Address after: Tokyo, Japan Applicant after: TOSHIBA MEMORY Corp. Applicant after: SK Hynix Address before: Tokyo, Japan Applicant before: Japanese businessman Panjaya Co.,Ltd. Applicant before: SK Hynix |
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TA01 | Transfer of patent application right | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20220121 Address after: Tokyo, Japan Applicant after: Japanese businessman Panjaya Co.,Ltd. Applicant after: SK Hynix Address before: Tokyo, Japan Applicant before: TOSHIBA MEMORY Corp. Applicant before: SK Hynix |
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