CN108883938B - 自由原子纳米管生长 - Google Patents

自由原子纳米管生长 Download PDF

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Publication number
CN108883938B
CN108883938B CN201780019697.9A CN201780019697A CN108883938B CN 108883938 B CN108883938 B CN 108883938B CN 201780019697 A CN201780019697 A CN 201780019697A CN 108883938 B CN108883938 B CN 108883938B
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substrate
feed
electromagnetic radiation
layer
atoms
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CN108883938A (zh
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布莱恩·劳布切尔
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Odysseus Technology Co
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Odysseus Technology Co
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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/064—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with boron
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • B82B3/0009—Forming specific nanostructures
    • B82B3/0019—Forming specific nanostructures without movable or flexible elements
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/072—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with aluminium
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/158—Carbon nanotubes
    • C01B32/16—Preparation
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/158—Carbon nanotubes
    • C01B32/16—Preparation
    • C01B32/162—Preparation characterised by catalysts
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/158—Carbon nanotubes
    • C01B32/16—Preparation
    • C01B32/164—Preparation involving continuous processes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/32—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer
    • C23C28/321—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer with at least one metal alloy layer
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/32—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer
    • C23C28/322—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer only coatings of metal elements only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/34—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/10—Particle morphology extending in one dimension, e.g. needle-like
    • C01P2004/13—Nanotubes

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Catalysts (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
CN201780019697.9A 2016-02-15 2017-02-12 自由原子纳米管生长 Active CN108883938B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/043,952 US10618810B2 (en) 2013-09-25 2016-02-15 Free atom nanotube growth
US15/043,952 2016-02-15
PCT/US2017/017583 WO2017142819A1 (en) 2016-02-15 2017-02-12 Free atom nanotube growth

Publications (2)

Publication Number Publication Date
CN108883938A CN108883938A (zh) 2018-11-23
CN108883938B true CN108883938B (zh) 2023-06-23

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CN201780019697.9A Active CN108883938B (zh) 2016-02-15 2017-02-12 自由原子纳米管生长

Country Status (8)

Country Link
US (1) US10618810B2 (enExample)
EP (1) EP3416914A4 (enExample)
JP (2) JP2019511995A (enExample)
KR (1) KR102708904B1 (enExample)
CN (1) CN108883938B (enExample)
CA (1) CA3014048A1 (enExample)
RU (2) RU2021122177A (enExample)
WO (1) WO2017142819A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10618810B2 (en) * 2013-09-25 2020-04-14 Odysseus Technologies, Inc. Free atom nanotube growth
US11247901B2 (en) 2012-10-29 2022-02-15 Odysseus Technologies, Inc. Free atom nanotube growth
FR3107053B1 (fr) * 2020-02-11 2022-02-04 Commissariat Energie Atomique Materiau hydride 2d/1d comprenant une couche carbonee recouverte par une foret de nanotubes de carbone

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101475159A (zh) * 2007-12-31 2009-07-08 细美事有限公司 制造碳纳米管的流化床设备、碳纳米管制造装置及方法
CN101734641A (zh) * 2008-11-14 2010-06-16 华北电力大学 热解合成碳纳米管加热器及合成方法
CN102574688A (zh) * 2009-07-31 2012-07-11 麻省理工学院 涉及形成碳基纳米管的系统和方法
CN103794552A (zh) * 2012-10-26 2014-05-14 应用材料公司 铜衬底上的碳纳米管生长

Family Cites Families (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
GB0216654D0 (en) 2002-07-17 2002-08-28 Univ Cambridge Tech CVD Synthesis of carbon nanoutubes
CN100411979C (zh) 2002-09-16 2008-08-20 清华大学 一种碳纳米管绳及其制造方法
CN101205060B (zh) 2006-12-20 2011-05-04 清华大学 碳纳米管阵列的制备方法
US8206674B2 (en) 2007-05-15 2012-06-26 National Institute Of Aerospace Associates Boron nitride nanotubes
US20090163647A1 (en) * 2007-12-21 2009-06-25 Envont Llc Hybrid metal oxides
US7883580B2 (en) * 2008-04-02 2011-02-08 Raythedn Company System and method for nanotube growth via Ion implantation using a catalytic transmembrane
RU2393276C1 (ru) * 2009-03-05 2010-06-27 Общество с ограниченной ответственностью "Объединенный центр исследований и разработок" Способ изготовления длинных ориентированных жгутов углеродных нановолокон
WO2011066288A2 (en) * 2009-11-25 2011-06-03 Massachusetts Institute Of Technology Systems and methods for enhancing growth of carbon-based nanostructures
KR102213734B1 (ko) * 2011-11-18 2021-02-08 윌리엄 마쉬 라이스 유니버시티 그래핀-탄소 나노튜브 하이브리드 물질 및 전극으로서의 용도
US20130306490A1 (en) 2012-05-15 2013-11-21 Bryan Edward Laubscher Nanotube Detangler
US9656246B2 (en) * 2012-07-11 2017-05-23 Carbice Corporation Vertically aligned arrays of carbon nanotubes formed on multilayer substrates
US9371232B2 (en) * 2012-10-29 2016-06-21 Bryan Edward Laubscher Trekking atom nanotube growth
US20140120028A1 (en) 2012-10-29 2014-05-01 Bryan Edward Laubscher Proximate atom nanotube growth
US10618810B2 (en) * 2013-09-25 2020-04-14 Odysseus Technologies, Inc. Free atom nanotube growth
US9239224B2 (en) 2013-02-26 2016-01-19 Bryan Edward Laubscher Natural light interferometer

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101475159A (zh) * 2007-12-31 2009-07-08 细美事有限公司 制造碳纳米管的流化床设备、碳纳米管制造装置及方法
CN101734641A (zh) * 2008-11-14 2010-06-16 华北电力大学 热解合成碳纳米管加热器及合成方法
CN102574688A (zh) * 2009-07-31 2012-07-11 麻省理工学院 涉及形成碳基纳米管的系统和方法
CN103794552A (zh) * 2012-10-26 2014-05-14 应用材料公司 铜衬底上的碳纳米管生长

Also Published As

Publication number Publication date
RU2018132725A (ru) 2020-03-17
RU2021122177A (ru) 2021-10-29
US10618810B2 (en) 2020-04-14
CA3014048A1 (en) 2017-08-24
EP3416914A1 (en) 2018-12-26
JP7384855B2 (ja) 2023-11-21
JP2021121580A (ja) 2021-08-26
CN108883938A (zh) 2018-11-23
JP2019511995A (ja) 2019-05-09
RU2021122177A3 (enExample) 2022-04-19
KR102708904B1 (ko) 2024-09-23
US20170233254A1 (en) 2017-08-17
RU2753099C2 (ru) 2021-08-11
WO2017142819A1 (en) 2017-08-24
RU2018132725A3 (enExample) 2020-07-30
KR20180114127A (ko) 2018-10-17
EP3416914A4 (en) 2020-03-18

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