JP2021121580A5 - - Google Patents
Download PDFInfo
- Publication number
- JP2021121580A5 JP2021121580A5 JP2021093680A JP2021093680A JP2021121580A5 JP 2021121580 A5 JP2021121580 A5 JP 2021121580A5 JP 2021093680 A JP2021093680 A JP 2021093680A JP 2021093680 A JP2021093680 A JP 2021093680A JP 2021121580 A5 JP2021121580 A5 JP 2021121580A5
- Authority
- JP
- Japan
- Prior art keywords
- substrate
- feed
- atoms
- layer
- front side
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000758 substrate Substances 0.000 claims description 95
- 230000012010 growth Effects 0.000 claims description 77
- 239000002071 nanotube Substances 0.000 claims description 60
- 125000004429 atom Chemical group 0.000 claims description 48
- 238000000034 method Methods 0.000 claims description 31
- 239000003054 catalyst Substances 0.000 claims description 29
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims description 26
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 claims description 14
- 229910052799 carbon Inorganic materials 0.000 claims description 12
- 239000000463 material Substances 0.000 claims description 11
- 229910003481 amorphous carbon Inorganic materials 0.000 claims description 7
- 229910052742 iron Inorganic materials 0.000 claims description 7
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 6
- 230000003197 catalytic effect Effects 0.000 claims description 6
- 230000005670 electromagnetic radiation Effects 0.000 claims description 6
- 229910052710 silicon Inorganic materials 0.000 claims description 6
- 239000010703 silicon Substances 0.000 claims description 6
- 230000003287 optical effect Effects 0.000 claims description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 claims 6
- 229910052757 nitrogen Inorganic materials 0.000 claims 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 2
- KDLHZDBZIXYQEI-UHFFFAOYSA-N Palladium Chemical compound [Pd] KDLHZDBZIXYQEI-UHFFFAOYSA-N 0.000 claims 2
- 229910052782 aluminium Inorganic materials 0.000 claims 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 claims 1
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims 1
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims 1
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims 1
- 229910045601 alloy Inorganic materials 0.000 claims 1
- 239000000956 alloy Substances 0.000 claims 1
- 229910052796 boron Inorganic materials 0.000 claims 1
- 150000001721 carbon Chemical group 0.000 claims 1
- 229910052804 chromium Inorganic materials 0.000 claims 1
- 239000011651 chromium Substances 0.000 claims 1
- 229910017052 cobalt Inorganic materials 0.000 claims 1
- 239000010941 cobalt Substances 0.000 claims 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 239000010949 copper Substances 0.000 claims 1
- 229910052733 gallium Inorganic materials 0.000 claims 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 239000010931 gold Substances 0.000 claims 1
- 229910052749 magnesium Inorganic materials 0.000 claims 1
- 239000011777 magnesium Substances 0.000 claims 1
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 claims 1
- 229910052751 metal Inorganic materials 0.000 claims 1
- 239000002184 metal Substances 0.000 claims 1
- 150000002739 metals Chemical class 0.000 claims 1
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- 239000011733 molybdenum Substances 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 229910052763 palladium Inorganic materials 0.000 claims 1
- 229910052697 platinum Inorganic materials 0.000 claims 1
- 229910052702 rhenium Inorganic materials 0.000 claims 1
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 claims 1
- 229910052709 silver Inorganic materials 0.000 claims 1
- 239000004332 silver Substances 0.000 claims 1
- 229910052718 tin Inorganic materials 0.000 claims 1
- 239000011135 tin Substances 0.000 claims 1
- 229910052720 vanadium Inorganic materials 0.000 claims 1
- LEONUFNNVUYDNQ-UHFFFAOYSA-N vanadium atom Chemical compound [V] LEONUFNNVUYDNQ-UHFFFAOYSA-N 0.000 claims 1
- 229910052727 yttrium Inorganic materials 0.000 claims 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims 1
- 238000002474 experimental method Methods 0.000 description 17
- 239000002041 carbon nanotube Substances 0.000 description 15
- 229910021393 carbon nanotube Inorganic materials 0.000 description 14
- 238000006243 chemical reaction Methods 0.000 description 11
- 230000033001 locomotion Effects 0.000 description 10
- 238000005229 chemical vapour deposition Methods 0.000 description 9
- 239000007789 gas Substances 0.000 description 8
- 125000004432 carbon atom Chemical group C* 0.000 description 6
- 239000010453 quartz Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 5
- 238000000137 annealing Methods 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 239000002245 particle Substances 0.000 description 4
- 230000005855 radiation Effects 0.000 description 4
- 239000000126 substance Substances 0.000 description 4
- 239000011248 coating agent Substances 0.000 description 3
- 238000000576 coating method Methods 0.000 description 3
- 230000008021 deposition Effects 0.000 description 3
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000004936 stimulating effect Effects 0.000 description 3
- 230000032258 transport Effects 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- 229910002601 GaN Inorganic materials 0.000 description 2
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 description 2
- 238000000429 assembly Methods 0.000 description 2
- 230000000712 assembly Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000005255 carburizing Methods 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 239000004065 semiconductor Substances 0.000 description 2
- 238000004513 sizing Methods 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 1
- 230000003213 activating effect Effects 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- 229910021386 carbon form Inorganic materials 0.000 description 1
- 239000012141 concentrate Substances 0.000 description 1
- 239000000470 constituent Substances 0.000 description 1
- 238000004090 dissolution Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000000605 extraction Methods 0.000 description 1
- 230000007773 growth pattern Effects 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 238000003780 insertion Methods 0.000 description 1
- 230000037431 insertion Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000004626 scanning electron microscopy Methods 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 230000008685 targeting Effects 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US15/043,952 | 2016-02-15 | ||
| US15/043,952 US10618810B2 (en) | 2013-09-25 | 2016-02-15 | Free atom nanotube growth |
| JP2018561194A JP2019511995A (ja) | 2016-02-15 | 2017-02-12 | 遊離原子ナノチューブの成長 |
Related Parent Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018561194A Division JP2019511995A (ja) | 2016-02-15 | 2017-02-12 | 遊離原子ナノチューブの成長 |
Publications (3)
| Publication Number | Publication Date |
|---|---|
| JP2021121580A JP2021121580A (ja) | 2021-08-26 |
| JP2021121580A5 true JP2021121580A5 (enExample) | 2023-07-31 |
| JP7384855B2 JP7384855B2 (ja) | 2023-11-21 |
Family
ID=59562387
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018561194A Pending JP2019511995A (ja) | 2016-02-15 | 2017-02-12 | 遊離原子ナノチューブの成長 |
| JP2021093680A Active JP7384855B2 (ja) | 2016-02-15 | 2021-06-03 | 遊離原子ナノチューブの成長 |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| JP2018561194A Pending JP2019511995A (ja) | 2016-02-15 | 2017-02-12 | 遊離原子ナノチューブの成長 |
Country Status (8)
| Country | Link |
|---|---|
| US (1) | US10618810B2 (enExample) |
| EP (1) | EP3416914A4 (enExample) |
| JP (2) | JP2019511995A (enExample) |
| KR (1) | KR102708904B1 (enExample) |
| CN (1) | CN108883938B (enExample) |
| CA (1) | CA3014048A1 (enExample) |
| RU (2) | RU2753099C2 (enExample) |
| WO (1) | WO2017142819A1 (enExample) |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US10618810B2 (en) * | 2013-09-25 | 2020-04-14 | Odysseus Technologies, Inc. | Free atom nanotube growth |
| US11247901B2 (en) | 2012-10-29 | 2022-02-15 | Odysseus Technologies, Inc. | Free atom nanotube growth |
| FR3107053B1 (fr) * | 2020-02-11 | 2022-02-04 | Commissariat Energie Atomique | Materiau hydride 2d/1d comprenant une couche carbonee recouverte par une foret de nanotubes de carbone |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| GB0216654D0 (en) | 2002-07-17 | 2002-08-28 | Univ Cambridge Tech | CVD Synthesis of carbon nanoutubes |
| CN100411979C (zh) | 2002-09-16 | 2008-08-20 | 清华大学 | 一种碳纳米管绳及其制造方法 |
| CN101205060B (zh) | 2006-12-20 | 2011-05-04 | 清华大学 | 碳纳米管阵列的制备方法 |
| US8206674B2 (en) | 2007-05-15 | 2012-06-26 | National Institute Of Aerospace Associates | Boron nitride nanotubes |
| US20090163647A1 (en) * | 2007-12-21 | 2009-06-25 | Envont Llc | Hybrid metal oxides |
| KR100977147B1 (ko) * | 2007-12-31 | 2010-08-23 | 세메스 주식회사 | 유동층 탄소나노튜브 생성 장치 및 그것을 사용한탄소나노튜브 생성 설비 및 방법 |
| US7883580B2 (en) * | 2008-04-02 | 2011-02-08 | Raythedn Company | System and method for nanotube growth via Ion implantation using a catalytic transmembrane |
| CN101734641A (zh) * | 2008-11-14 | 2010-06-16 | 华北电力大学 | 热解合成碳纳米管加热器及合成方法 |
| RU2393276C1 (ru) * | 2009-03-05 | 2010-06-27 | Общество с ограниченной ответственностью "Объединенный центр исследований и разработок" | Способ изготовления длинных ориентированных жгутов углеродных нановолокон |
| JP2013500922A (ja) * | 2009-07-31 | 2013-01-10 | マサチューセッツ インスティテュート オブ テクノロジー | 炭素系ナノ構造の形成に関するシステムおよび方法 |
| EP2504278A2 (en) * | 2009-11-25 | 2012-10-03 | Massachusetts Institute of Technology | Systems and methods for enhancing growth of carbon-based nanostructures |
| KR102213734B1 (ko) * | 2011-11-18 | 2021-02-08 | 윌리엄 마쉬 라이스 유니버시티 | 그래핀-탄소 나노튜브 하이브리드 물질 및 전극으로서의 용도 |
| US20130306490A1 (en) | 2012-05-15 | 2013-11-21 | Bryan Edward Laubscher | Nanotube Detangler |
| US9656246B2 (en) * | 2012-07-11 | 2017-05-23 | Carbice Corporation | Vertically aligned arrays of carbon nanotubes formed on multilayer substrates |
| TW201418156A (zh) * | 2012-10-26 | 2014-05-16 | Applied Materials Inc | 銅基板上的奈米碳管之生長 |
| US10618810B2 (en) * | 2013-09-25 | 2020-04-14 | Odysseus Technologies, Inc. | Free atom nanotube growth |
| US20140120028A1 (en) | 2012-10-29 | 2014-05-01 | Bryan Edward Laubscher | Proximate atom nanotube growth |
| US9371232B2 (en) * | 2012-10-29 | 2016-06-21 | Bryan Edward Laubscher | Trekking atom nanotube growth |
| US9239224B2 (en) | 2013-02-26 | 2016-01-19 | Bryan Edward Laubscher | Natural light interferometer |
-
2016
- 2016-02-15 US US15/043,952 patent/US10618810B2/en active Active
-
2017
- 2017-02-12 EP EP17753675.2A patent/EP3416914A4/en active Pending
- 2017-02-12 RU RU2018132725A patent/RU2753099C2/ru active
- 2017-02-12 WO PCT/US2017/017583 patent/WO2017142819A1/en not_active Ceased
- 2017-02-12 RU RU2021122177A patent/RU2021122177A/ru unknown
- 2017-02-12 JP JP2018561194A patent/JP2019511995A/ja active Pending
- 2017-02-12 CA CA3014048A patent/CA3014048A1/en active Pending
- 2017-02-12 KR KR1020187026340A patent/KR102708904B1/ko active Active
- 2017-02-12 CN CN201780019697.9A patent/CN108883938B/zh active Active
-
2021
- 2021-06-03 JP JP2021093680A patent/JP7384855B2/ja active Active
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| JP2021121580A5 (enExample) | ||
| JP7384855B2 (ja) | 遊離原子ナノチューブの成長 | |
| CA2999527C (en) | Method of fabricating a plurality of single crystal cvd synthetic diamonds | |
| JPH11180707A (ja) | カーボンナノチューブの製造装置及びその製造方法 | |
| JP2998244B2 (ja) | 領域選択的結晶成長方法 | |
| US20250128945A1 (en) | Free atom nanotube growth | |
| TWI345554B (enExample) | ||
| JP6223647B1 (ja) | 種結晶基板の製造方法、１３族元素窒化物結晶の製造方法および種結晶基板 | |
| CN104966666B (zh) | 一种氮化物纳米线的制作方法 | |
| CN102084039B (zh) | 制造AlxGa(1-x)N单晶的方法、AlxGa(1-x)N单晶和光学部件 | |
| JP4053336B2 (ja) | Ｉｉｉ族窒化物結晶製造方法およびｉｉｉ族窒化物結晶製造装置 | |
| JP4129528B2 (ja) | β−ＦｅＳｉ２結晶粒子を含む薄膜及びこれを用いた発光材料 | |
| JP2006140230A (ja) | レーザ照射装置及びレーザ照射方法 | |
| CN108349729B (zh) | 制造碳纳米结构体的方法和制造碳纳米结构体的装置 | |
| KR20150016132A (ko) | 코팅 장치 및 코팅 장치를 제조하기 위한 방법 | |
| US9371232B2 (en) | Trekking atom nanotube growth | |
| JPS60186499A (ja) | 人工ダイヤモンドの析出生成方法 | |
| JP3099539B2 (ja) | 人工ダイヤモンド粉末の製造法 | |
| JP2003013226A (ja) | 超強度弾性ダイヤモンド状炭素の形成方法 | |
| JP3247838B2 (ja) | 熱分解窒化ほう素ルツボ及びその製造方法 | |
| Bol'shakov et al. | A laser plasmotron for chamberless deposition of diamond films | |
| JP3182584B2 (ja) | 化合物薄膜形成方法 | |
| Rouleau et al. | Altering the catalytic activity of thin metal catalyst films for controlled growth of chemical vapor deposited vertically aligned carbon nanotube arrays | |
| RU2484188C2 (ru) | Способ получения микро- и наноструктурированных массивов кристаллов оксида цинка | |
| JPH1017314A (ja) | 親水化ダイヤモンド結晶およびその製造方法 |