JP2019511995A - 遊離原子ナノチューブの成長 - Google Patents

遊離原子ナノチューブの成長 Download PDF

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JP2019511995A
JP2019511995A JP2018561194A JP2018561194A JP2019511995A JP 2019511995 A JP2019511995 A JP 2019511995A JP 2018561194 A JP2018561194 A JP 2018561194A JP 2018561194 A JP2018561194 A JP 2018561194A JP 2019511995 A JP2019511995 A JP 2019511995A
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substrate
growth
nanotubes
broad
catalyst
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ラウブシャー，ブライアン
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    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/064—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with boron
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82B—NANOSTRUCTURES FORMED BY MANIPULATION OF INDIVIDUAL ATOMS, MOLECULES, OR LIMITED COLLECTIONS OF ATOMS OR MOLECULES AS DISCRETE UNITS; MANUFACTURE OR TREATMENT THEREOF
    • B82B3/00—Manufacture or treatment of nanostructures by manipulation of individual atoms or molecules, or limited collections of atoms or molecules as discrete units
    • B82B3/0009—Forming specific nanostructures
    • B82B3/0019—Forming specific nanostructures without movable or flexible elements
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B82—NANOTECHNOLOGY
    • B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
    • B82Y40/00—Manufacture or treatment of nanostructures
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B21/00—Nitrogen; Compounds thereof
    • C01B21/06—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron
    • C01B21/072—Binary compounds of nitrogen with metals, with silicon, or with boron, or with carbon, i.e. nitrides; Compounds of nitrogen with more than one metal, silicon or boron with aluminium
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/158—Carbon nanotubes
    • C01B32/16—Preparation
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/158—Carbon nanotubes
    • C01B32/16—Preparation
    • C01B32/162—Preparation characterised by catalysts
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01B—NON-METALLIC ELEMENTS; COMPOUNDS THEREOF; METALLOIDS OR COMPOUNDS THEREOF NOT COVERED BY SUBCLASS C01C
    • C01B32/00—Carbon; Compounds thereof
    • C01B32/15—Nano-sized carbon materials
    • C01B32/158—Carbon nanotubes
    • C01B32/16—Preparation
    • C01B32/164—Preparation involving continuous processes
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C26/00—Coating not provided for in groups C23C2/00 - C23C24/00
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/32—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer
    • C23C28/321—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer with at least one metal alloy layer
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/32—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer
    • C23C28/322—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one pure metallic layer only coatings of metal elements only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C28/00—Coating for obtaining at least two superposed coatings either by methods not provided for in a single one of groups C23C2/00 - C23C26/00 or by combinations of methods provided for in subclasses C23C and C25C or C25D
    • C23C28/30—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer
    • C23C28/34—Coatings combining at least one metallic layer and at least one inorganic non-metallic layer including at least one inorganic non-metallic material layer, e.g. metal carbide, nitride, boride, silicide layer and their mixtures, enamels, phosphates and sulphates
    • C—CHEMISTRY; METALLURGY
    • C01—INORGANIC CHEMISTRY
    • C01P—INDEXING SCHEME RELATING TO STRUCTURAL AND PHYSICAL ASPECTS OF SOLID INORGANIC COMPOUNDS
    • C01P2004/00—Particle morphology
    • C01P2004/10—Particle morphology extending in one dimension, e.g. needle-like
    • C01P2004/13—Nanotubes

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  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Nanotechnology (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Crystallography & Structural Chemistry (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Carbon And Carbon Compounds (AREA)
  • Catalysts (AREA)
  • General Chemical & Material Sciences (AREA)
  • Physical Or Chemical Processes And Apparatus (AREA)
JP2018561194A 2016-02-15 2017-02-12 遊離原子ナノチューブの成長 Pending JP2019511995A (ja)

Priority Applications (1)

Application Number Priority Date Filing Date Title
JP2021093680A JP7384855B2 (ja) 2016-02-15 2021-06-03 遊離原子ナノチューブの成長

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US15/043,952 US10618810B2 (en) 2013-09-25 2016-02-15 Free atom nanotube growth
US15/043,952 2016-02-15
PCT/US2017/017583 WO2017142819A1 (en) 2016-02-15 2017-02-12 Free atom nanotube growth

Related Child Applications (1)

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JP2021093680A Division JP7384855B2 (ja) 2016-02-15 2021-06-03 遊離原子ナノチューブの成長

Publications (1)

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JP2019511995A true JP2019511995A (ja) 2019-05-09

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JP2021093680A Active JP7384855B2 (ja) 2016-02-15 2021-06-03 遊離原子ナノチューブの成長

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Country Status (8)

Country Link
US (1) US10618810B2 (enExample)
EP (1) EP3416914A4 (enExample)
JP (2) JP2019511995A (enExample)
KR (1) KR102708904B1 (enExample)
CN (1) CN108883938B (enExample)
CA (1) CA3014048A1 (enExample)
RU (2) RU2021122177A (enExample)
WO (1) WO2017142819A1 (enExample)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2021121580A (ja) * 2016-02-15 2021-08-26 オデュッセウス テクノロジーズ，インコーポレイテッド 遊離原子ナノチューブの成長
US12162751B2 (en) 2012-10-29 2024-12-10 Odysseus Technologies, Inc. Free atom nanotube growth

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
FR3107053B1 (fr) * 2020-02-11 2022-02-04 Commissariat Energie Atomique Materiau hydride 2d/1d comprenant une couche carbonee recouverte par une foret de nanotubes de carbone

Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140120029A1 (en) * 2012-10-29 2014-05-01 Bryan Edward Laubscher Trekking Atom Nanotube Growth

Family Cites Families (18)

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GB0216654D0 (en) 2002-07-17 2002-08-28 Univ Cambridge Tech CVD Synthesis of carbon nanoutubes
CN100411979C (zh) 2002-09-16 2008-08-20 清华大学 一种碳纳米管绳及其制造方法
CN101205060B (zh) 2006-12-20 2011-05-04 清华大学 碳纳米管阵列的制备方法
US8206674B2 (en) 2007-05-15 2012-06-26 National Institute Of Aerospace Associates Boron nitride nanotubes
US20090163647A1 (en) * 2007-12-21 2009-06-25 Envont Llc Hybrid metal oxides
KR100977147B1 (ko) * 2007-12-31 2010-08-23 세메스 주식회사 유동층 탄소나노튜브 생성 장치 및 그것을 사용한탄소나노튜브 생성 설비 및 방법
US7883580B2 (en) * 2008-04-02 2011-02-08 Raythedn Company System and method for nanotube growth via Ion implantation using a catalytic transmembrane
CN101734641A (zh) * 2008-11-14 2010-06-16 华北电力大学 热解合成碳纳米管加热器及合成方法
RU2393276C1 (ru) * 2009-03-05 2010-06-27 Общество с ограниченной ответственностью "Объединенный центр исследований и разработок" Способ изготовления длинных ориентированных жгутов углеродных нановолокон
CN102574688A (zh) * 2009-07-31 2012-07-11 麻省理工学院 涉及形成碳基纳米管的系统和方法
WO2011066288A2 (en) * 2009-11-25 2011-06-03 Massachusetts Institute Of Technology Systems and methods for enhancing growth of carbon-based nanostructures
KR102213734B1 (ko) * 2011-11-18 2021-02-08 윌리엄 마쉬 라이스 유니버시티 그래핀-탄소 나노튜브 하이브리드 물질 및 전극으로서의 용도
US20130306490A1 (en) 2012-05-15 2013-11-21 Bryan Edward Laubscher Nanotube Detangler
US9656246B2 (en) * 2012-07-11 2017-05-23 Carbice Corporation Vertically aligned arrays of carbon nanotubes formed on multilayer substrates
TW201418156A (zh) * 2012-10-26 2014-05-16 Applied Materials Inc 銅基板上的奈米碳管之生長
US20140120028A1 (en) 2012-10-29 2014-05-01 Bryan Edward Laubscher Proximate atom nanotube growth
US10618810B2 (en) * 2013-09-25 2020-04-14 Odysseus Technologies, Inc. Free atom nanotube growth
US9239224B2 (en) 2013-02-26 2016-01-19 Bryan Edward Laubscher Natural light interferometer

Patent Citations (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20140120029A1 (en) * 2012-10-29 2014-05-01 Bryan Edward Laubscher Trekking Atom Nanotube Growth

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US12162751B2 (en) 2012-10-29 2024-12-10 Odysseus Technologies, Inc. Free atom nanotube growth
JP2021121580A (ja) * 2016-02-15 2021-08-26 オデュッセウス テクノロジーズ，インコーポレイテッド 遊離原子ナノチューブの成長

Also Published As

Publication number Publication date
RU2018132725A (ru) 2020-03-17
RU2021122177A (ru) 2021-10-29
US10618810B2 (en) 2020-04-14
CA3014048A1 (en) 2017-08-24
EP3416914A1 (en) 2018-12-26
JP7384855B2 (ja) 2023-11-21
JP2021121580A (ja) 2021-08-26
CN108883938A (zh) 2018-11-23
RU2021122177A3 (enExample) 2022-04-19
KR102708904B1 (ko) 2024-09-23
US20170233254A1 (en) 2017-08-17
CN108883938B (zh) 2023-06-23
RU2753099C2 (ru) 2021-08-11
WO2017142819A1 (en) 2017-08-24
RU2018132725A3 (enExample) 2020-07-30
KR20180114127A (ko) 2018-10-17
EP3416914A4 (en) 2020-03-18

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