201040105 六、發明說明： 【發明所屬之技術領域】 本發明涉及一種奈米碳管膜製造技術，特別係關於一 - 種奈米碳管膜前驅，奈米碳管膜及其製造方法以及具有該 奈米碳管膜之發光器件。 【先前技術】 自從奈米碳管之發現以來，由於其具有優越之機械、 導電及導熱性而得到大量之關注。由複數根奈米碳管組成 0 之奈米碳管膜也係一種較為熟知之奈米材料，其係一種由 很多奈米碳管連續排列而形成之膜狀結構。奈米碳管膜可 以用作導電材料、發熱材料或者是用作光源之發光元件等 等多種應用領域。但是一些應用領域，如發光光源，要求 奈米碳管膜之分佈具有一定之規律性以獲得更好之性能， 如發光光源之偏振度。通常廣泛應用之偏振光源，為一種 普通光源再載入一偏振片。該偏振片為一可吸收偏振片， 即其可吸收一偏振態之光，而另一偏振態之光則通過該偏 ® 振片。偏振度係用於表徵偏振光源之重要參數之一，即所 發出之光之偏振化程度，其用於描述一偏振光源所發出之 光束之偏振性質。而通過控制奈米碳管膜中奈米碳管之分 佈規律可以控制該奈米碳管膜之各種參數，如偏振度。 【發明内容】 有鑒於此，確有必要提供一種可控制奈米碳管膜中奈米 碳管分佈規律之奈米碳管膜前驅，奈米碳管膜及其製造方 法以及具有該奈米碳管膜之發光器件。 4 201040105 一種奈米碳管膜前驅，包括一基底，一形成於該基底 上之奈米碳管陣列，以及至少一與該奈米碳管陣列相連接 之奈米碳管膜。所述奈米碳管陣列包括複數大致沿其同一 . 個生長方向排列之奈米碳管。所述奈米碳管膜中奈米碳管 之軸向與所述奈米碳管之生長方向之間之銳角角度小於等 於80度，且該奈米碳管膜包括複數大致沿同一個方向排列 之奈米碳管。該奈米碳管膜還包括複數間隔設置之第一區 域和複數分別設置在相鄰之兩個第一區域之間之第二區 Ο 域。所述第一區域中奈米碳管之分佈密度大於第二區域中 奈米碳管之分佈密度。 一種奈米碳管膜，其包括由複數大致沿同一個方向排 列之奈米碳管形成奈米碳管膜。該奈米碳管膜包括複數間 隔設置之第一區域和複數分別設置在相鄰之兩個第一區域 之間之第二區域，所述第一區域中奈米碳管之分佈密度大 於第二區域中奈米碳管之分佈密度。 一種製造奈米碳管膜之方法，其包括： ❹ 提供一個形成於一基底上且包括複數大致沿其同一個 生長方向排列之奈米碳管之奈米碳管陣列以及一抽取裝 置；使所述抽取裝置靠近所述奈米碳管陣列以選定複數奈 米碳管；用所述抽取裝置沿遠離奈米碳管陣列拉談複數奈 米碳管以獲取一奈米碳管膜，其中該抽取裝置之抽取方向 與奈米碳管之生長方向之間之銳角之角度小於等於80度。 一種發光器件，其包括一奈米碳管膜。該奈米碳管膜 由複數大致沿同一個方向排列之奈米碳管形成，並且包括 複數間隔設置之第一區域和複數分別設置在相鄰之兩個第 5 201040105 一區域之間之第二區域。所述第一區域中之奈米碳管之分 佈密度大於第二區域中之奈米碳管之分佈密度。 相較與先前技術，在上述製造奈米碳管膜之方法中， . 使抽取裝置之抽取方向與奈米碳管之生長方向之間之銳角 角度小於等於80度以抽取得一奈米碳管膜，從而製造出一 可控制該奈米碳管膜中之奈米碳管之分佈規律之奈米碳管 膜，即該奈米碳管膜中之第一區域中奈米碳管之分佈密度 大於第二區域奈中米碳管之分佈密度之分佈規律。 Ο 【實施方式】 下面將結合附圖，舉以下較佳實施例並配合圖式詳細 描述如下。 請參閱圖1及圖2，為所述奈米碳管膜20之製造方 法。該製造方法包括下列步驟： 步驟S101 :提供一形成於一基底22上且包括複數大 致沿其同一個生長方向排列之奈米碳管之奈米碳管陣列以 及一抽取裝置30 ; 〇 步驟S102 :使所述抽取裝置30靠近所述奈米碳管陣 列以選定複數奈米碳管； 步驟S103 :用所述抽取裝置30沿遠離奈米碳管陣列 拉該複數奈米碳管以獲取一奈米碳管膜20，其中，該抽取 裝置30之抽取方向與奈米碳管之生長方向之間之銳角之 角度小於等於80度。 在步驟S101中，包括複數沿大致同一個生長方向排 列之奈米碳管之奈米碳管陣列之製備方法不限，可採用化 學氣相沈積法、電漿氣相沉積法、電弧放電法等。其中， 201040105 所述“大致”之意思係由於奈米碳管在生長過程中各種因 素之制約，如碳源氣氣流之流動速度不一致，碳源氣之濃 度之不均勻以及催化劑之不平整，不可能也不必使奈米碳 管中之每根奈米碳管完全沿其生長方向排列，即每根奈米 • 碳管完全平行。這種具有複數沿大致同一個生長方向排列 之奈米碳管之奈米碳管陣列通常稱之為超順排奈米碳管陣 列（Super-aligned Carbon Nanotube array，SACNT)。在本實 施例中，請參閱圖3,該奈米碳管陣列之製備方法選用化 0 學氣相沉積法，其具體包括以下步驟： 步驟S201 :提供所述基底22。該基底22可選用矽晶片 或表面有一層氧化矽之矽晶片，優選地，其表面平整度小 於1微米，以使後續在該基底22表面上生長之奈米碳管陣列 之根部基本位於同一平面。 步驟S202 :在基底22表面形成一催化劑層21。該催化 劑層21之厚度為幾奈米到幾百奈米，其中催化劑材料可為 鐵(Fe)、鈷(Co)、鎳(Ni)或其任意組合之合金。 ® 步驟S203 ·將表面沉積有催化劑層21之基底22在 300-400°C溫度條件下氧化退火處理5_15小時以在該基底。 表面形成奈米級催化劑顆粒。 步驟S204 :將該表面形成有奈米級催化劑顆粒之基底 22裝載於一反應爐中，在保護氣體環境下加熱至5〇〇~7〇〇 攝氏度(°C)，其中，該保護氣體為惰性氣體或氮氣。 步驟S205 :向反應爐内通入碳源氣與載氣之混合氣 體，在基底22表面生長奈米碳管陣列，進而可獲得本實施 例中之奈米碳管陣列。其中，碳源氣可選用乙炔、乙烯等； 201040105 該載氣可為惰性氣體或氮氣；碳源氣之流量為20-50標準立 方釐米每分鐘（Standard Cubic Centimeter per Minut seem)，載氣之流量為。 由上述方法所製備之奈米碳管陣列包括單壁奈米碳 管、雙壁奈米碳管、多壁奈米碳管、或其任意組合。奈米 碳管之直徑為0.5奈米_100奈米，高度L均為2〇〇微米 毫米。本實施例中，優選地，該奈米碳管陣列由直徑為工 奈米之單壁奈米碳管形成之陣列，且其高度L為3〇〇微米。 〇 在步驟S102中，所述抽取裝置30可以為膠帶或直尺。 本實施例優選為採用具有一定寬度之膠帶接觸奈米碳管陣 列以選定一定寬度之旅數奈米碳管。當所述抽取裝置30靠 近所述奈米碳管陣列時，最好使該抽取裝置30靠近奈米碳 管陣列邊緣之頂部以獲取一個完整之奈米碳管骐。同時在 靠近奈米碳管陣列時，由於奈米碳管與該抽取裝置30也存 在凡德瓦爾力，因此，當所述抽取裝置30與奈米碳管陣列 邊緣頂部之間之距離遠到—定範圍時，奈米碳管陣列中之 〇 奈米碳管自然而然就會吸附到該抽取裝置30上，從而即可 拉取奈米碳管膜。衣上述拉取過程中，該奈米碳管膜2〇 包括複數奈米碳管片段。該複數奈米碳管片段在拉力作用 下沿拉伸方向逐漸脫離基底之同時，由於凡德瓦爾力作 用，該選定之複數奈米碳管片斷分別與其他奈米碳管片斷 首尾相連地連續地被拉出’從而形成一奈米碳管膜20。因 此，當緩慢地移動該抽取裝置30時，便可將所選取之複數 奈米碳管從催化劑層21上取下。 8 201040105 在步驟S103中，當所述抽取裝置30之抽取方向與奈 米碳管之生長方向之間銳角之角度《小於等於80度，並用 該抽取裝置30拉上述之奈米碳管束時，便可以形成一所述 . 之奈米碳管膜20。也在此時，當所述奈米碳管膜20還沒 有脫離所述奈米碳管陣列時，形成一奈米碳管膜前驅。該 奈米碳管膜前驅包括所述基底22，一形成於該基底22上 之奈米碳管陣列，以及至少一與該奈米碳管陣列相連接之 奈米碳管膜20。所述奈米碳管膜20中之奈米碳管之軸向 Ο 與所述奈米碳管之生長方向之間之銳角之角度《小於等於 80度。 在用所述抽取裝置30拉取所述奈米碳管膜20時，該 奈米碳管膜20之形成過程可以分解為五個環節。請參閱圖 4A-4C，其為奈米碳管膜20在各個環節之結構示意圖。該 五個環節包括： (1) 在奈米碳管陣列之頂部邊緣選定第一奈米碳管片 段201 ;如圖4A所示，拉取裝置30選定了所述第一奈米 ❹碳管片段201。 (2) 該第一奈米碳管片段201先與奈米碳管陣列頂部脫 離，最後再與奈米碳管陣列之底部脫離從而從奈米碳管陣 列中拉取出該第一奈米碳管片段201;如圖4B所示，第一 奈米碳管片段201脫離了奈米碳管陣列。 (3) 拉取在奈米碳管陣列之底部與該第一奈米碳管片 段201相連且相鄰之第二奈米碳管片段202 ; (4) 該第二奈米碳管片段202先與奈米碳管陣列底部脫 離，最後再與奈米碳管陣列頂部脫離從而從奈米碳管陣列 201040105 中拉取出該第二奈米碳管片段202;如圖4C所示，第一和 第一奈米碳管片段201、202都脫離了該奈米碳管陣列。 (5)拉取在奈米碳管陣列之頂部與該第二奈米碳管片 段202相連且相鄰之第三奈米碳管片段203。201040105 VI. Description of the Invention: [Technical Field] The present invention relates to a nano carbon tube film manufacturing technology, in particular to a nanocarbon film precursor, a carbon nanotube film, a method for manufacturing the same, and the like A light-emitting device of a carbon nanotube film. [Prior Art] Since the discovery of the carbon nanotubes, there has been a great deal of attention due to its superior mechanical, electrical and thermal conductivity. A carbon nanotube film composed of a plurality of carbon nanotubes is also a relatively well-known nanomaterial, which is a film-like structure formed by continuously arranging a plurality of carbon nanotubes. The carbon nanotube film can be used as a conductive material, a heat generating material, or a light-emitting element used as a light source, and the like. However, some applications, such as illuminating light sources, require a certain degree of regularity in the distribution of the carbon nanotube film to achieve better performance, such as the degree of polarization of the illuminating source. A polarized light source that is generally widely used, and a polarizing plate is reloaded for a common light source. The polarizer is an absorbable polarizer that absorbs light in one polarization state and the other polarized light passes through the polarizer. Polarization is used to characterize one of the important parameters of a polarized light source, i.e., the degree of polarization of the emitted light, which is used to describe the polarization properties of the beam emitted by a polarized light source. The parameters of the carbon nanotube film, such as degree of polarization, can be controlled by controlling the distribution of the carbon nanotubes in the carbon nanotube film. SUMMARY OF THE INVENTION In view of the above, it is indeed necessary to provide a carbon nanotube film precursor capable of controlling the distribution of carbon nanotubes in a carbon nanotube film, a carbon nanotube film, a method for producing the same, and the same A light-emitting device for a tubular film. 4 201040105 A carbon nanotube film precursor comprising a substrate, an array of carbon nanotubes formed on the substrate, and at least one carbon nanotube film coupled to the array of carbon nanotubes. The carbon nanotube array includes a plurality of carbon nanotubes arranged substantially along the same growth direction. An acute angle between an axial direction of the carbon nanotube and a growth direction of the carbon nanotube in the carbon nanotube film is less than or equal to 80 degrees, and the carbon nanotube film comprises a plurality of substantially aligned in the same direction Nano carbon tube. The carbon nanotube film further includes a first region disposed at a plurality of intervals and a second region 复 region disposed between the adjacent two first regions, respectively. The distribution density of the carbon nanotubes in the first region is greater than the distribution density of the carbon nanotubes in the second region. A carbon nanotube film comprising a carbon nanotube film formed by a plurality of carbon nanotubes arranged substantially in the same direction. The carbon nanotube film comprises a plurality of spaced apart first regions and a plurality of second regions respectively disposed between adjacent two first regions, wherein the distribution density of the carbon nanotubes in the first region is greater than the second region The distribution density of carbon nanotubes in the area. A method of producing a carbon nanotube film, comprising: ❹ providing an array of carbon nanotubes formed on a substrate and comprising a plurality of carbon nanotubes arranged substantially along the same growth direction thereof; and an extracting device; Extracting device is adjacent to the carbon nanotube array to select a plurality of carbon nanotubes; and using the extracting device to pull a plurality of carbon nanotubes away from the carbon nanotube array to obtain a carbon nanotube film, wherein the extracting The angle between the extraction direction of the device and the growth direction of the carbon nanotubes is less than or equal to 80 degrees. A light emitting device comprising a carbon nanotube film. The carbon nanotube film is formed by a plurality of carbon nanotubes arranged substantially in the same direction, and includes a first region and a plurality of plural intervals arranged in a second interval between the adjacent two fifth 201040105 regions. region. The distribution density of the carbon nanotubes in the first region is greater than the distribution density of the carbon nanotubes in the second region. Compared with the prior art, in the above method for manufacturing a carbon nanotube film, an acute angle between the extraction direction of the extraction device and the growth direction of the carbon nanotube is less than or equal to 80 degrees to obtain a carbon nanotube Membrane, thereby producing a carbon nanotube film capable of controlling the distribution of the carbon nanotubes in the carbon nanotube film, that is, the distribution density of the carbon nanotubes in the first region of the carbon nanotube film It is larger than the distribution law of the distribution density of carbon nanotubes in the second region. DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Hereinafter, the following preferred embodiments will be described in detail with reference to the accompanying drawings. Referring to Figures 1 and 2, a method of manufacturing the carbon nanotube film 20 is shown. The manufacturing method comprises the following steps: Step S101: providing an array of carbon nanotubes formed on a substrate 22 and comprising a plurality of carbon nanotubes arranged substantially along the same growth direction thereof and an extracting device 30; 〇Step S102: The extracting device 30 is brought close to the carbon nanotube array to select a plurality of carbon nanotubes; Step S103: pulling the plurality of carbon nanotubes away from the carbon nanotube array with the extracting device 30 to obtain a nanometer The carbon tube film 20, wherein an angle between an extraction direction of the extraction device 30 and a growth direction of the carbon nanotubes is less than or equal to 80 degrees. In the step S101, the preparation method of the carbon nanotube array including the plurality of carbon nanotubes arranged in substantially the same growth direction is not limited, and chemical vapor deposition, plasma vapor deposition, arc discharge, etc. may be employed. . Among them, the meaning of “substantial” in 201040105 is due to various factors in the growth process of the carbon nanotubes, such as the inconsistent flow velocity of the carbon source gas stream, the uneven concentration of the carbon source gas and the unevenness of the catalyst, It may not be necessary to have each of the carbon nanotubes in the carbon nanotubes completely aligned along their growth direction, ie each nanocarbon tube is completely parallel. Such a carbon nanotube array having a plurality of carbon nanotubes arranged in substantially the same growth direction is generally referred to as a super-aligned carbon nanotube array (SACNT). In this embodiment, referring to FIG. 3, the method for preparing the carbon nanotube array is selected from the vapor deposition method, and specifically includes the following steps: Step S201: providing the substrate 22. The substrate 22 may be selected from a germanium wafer or a germanium wafer having a layer of yttria on the surface, preferably having a surface flatness of less than 1 micrometer, such that the roots of the carbon nanotube arrays subsequently grown on the surface of the substrate 22 are substantially in the same plane. . Step S202: forming a catalyst layer 21 on the surface of the substrate 22. The catalyst layer 21 has a thickness of from several nanometers to several hundred nanometers, wherein the catalyst material may be an alloy of iron (Fe), cobalt (Co), nickel (Ni) or any combination thereof. ® Step S203 - The substrate 22 on which the catalyst layer 21 is deposited is oxidatively annealed at a temperature of 300 to 400 ° C for 5 to 15 hours to be on the substrate. The surface forms nanoscale catalyst particles. Step S204: loading the substrate 22 on which the surface-formed nano-sized catalyst particles are formed in a reaction furnace, and heating to 5 〇〇 to 7 〇〇 Celsius (° C.) under a protective gas atmosphere, wherein the shielding gas is inert Gas or nitrogen. Step S205: a carbon monoxide array is grown on the surface of the substrate 22 by introducing a mixed gas of a carbon source gas and a carrier gas into the reaction furnace, thereby obtaining a carbon nanotube array in the present embodiment. Among them, the carbon source gas may be selected from acetylene, ethylene, etc.; 201040105 the carrier gas may be an inert gas or nitrogen; the flow rate of the carbon source gas is 20-50 standard cubic centimeters per minute (Standard Cubic Centimeter per Minut seem), the flow rate of the carrier gas for. The carbon nanotube array prepared by the above method comprises a single-walled carbon nanotube, a double-walled carbon nanotube, a multi-walled carbon nanotube, or any combination thereof. Nano Carbon tubes have a diameter of 0.5 nm to 100 nm and a height L of 2 μm. In this embodiment, preferably, the carbon nanotube array is formed of an array of single-walled carbon nanotubes having a diameter of nanometers, and has a height L of 3 μm.抽取 In step S102, the extraction device 30 may be a tape or a ruler. In this embodiment, it is preferred to use a tape having a certain width to contact the array of carbon nanotubes to select a certain width of the number of carbon nanotubes. Preferably, when the extraction device 30 is adjacent to the array of carbon nanotubes, the extraction device 30 is positioned adjacent the top of the edge of the carbon nanotube array to obtain a complete carbon nanotube. At the same time, when the carbon nanotube array is close to the carbon nanotubes, since the carbon nanotubes and the extraction device 30 also have a van der Waals force, when the distance between the extraction device 30 and the top of the edge of the carbon nanotube array is far- When the range is set, the carbon nanotubes in the carbon nanotube array are naturally adsorbed to the extraction device 30, so that the carbon nanotube film can be pulled. In the above drawing process, the carbon nanotube film 2〇 includes a plurality of carbon nanotube segments. The plurality of carbon nanotube segments are gradually separated from the substrate in the stretching direction by the tensile force, and the selected plurality of carbon nanotube segments are continuously connected end to end with the other carbon nanotube segments due to the van der Waals force. It is pulled out' to form a carbon nanotube film 20. Therefore, when the extracting device 30 is slowly moved, the selected plurality of carbon nanotubes can be removed from the catalyst layer 21. 8 201040105 In step S103, when the angle of the acute angle between the extraction direction of the extraction device 30 and the growth direction of the carbon nanotubes is less than or equal to 80 degrees, and the above-mentioned carbon nanotube bundle is pulled by the extraction device 30, A carbon nanotube film 20 of the above may be formed. Also at this time, when the carbon nanotube film 20 has not left the array of the carbon nanotubes, a carbon nanotube film precursor is formed. The carbon nanotube film precursor includes the substrate 22, an array of carbon nanotubes formed on the substrate 22, and at least one carbon nanotube film 20 coupled to the array of carbon nanotubes. The angle between the axial Ο of the carbon nanotube in the carbon nanotube film 20 and the growth direction of the carbon nanotube is "80 degrees or less." When the carbon nanotube film 20 is pulled by the extracting device 30, the formation process of the carbon nanotube film 20 can be decomposed into five steps. Please refer to FIG. 4A-4C, which is a schematic structural view of the carbon nanotube film 20 at various stages. The five links include: (1) selecting a first carbon nanotube segment 201 at a top edge of the carbon nanotube array; as shown in FIG. 4A, the pull device 30 selects the first nanotube carbon tube segment 201. (2) The first carbon nanotube segment 201 is first detached from the top of the carbon nanotube array, and finally separated from the bottom of the carbon nanotube array to pull the first carbon nanotube from the carbon nanotube array. Fragment 201; as shown in Figure 4B, the first carbon nanotube segment 201 is detached from the carbon nanotube array. (3) pulling a second carbon nanotube segment 202 adjacent to the first carbon nanotube segment 201 at the bottom of the carbon nanotube array and adjacent thereto; (4) the second carbon nanotube segment 202 first Disengaged from the bottom of the carbon nanotube array, and finally detached from the top of the carbon nanotube array to pull the second carbon nanotube segment 202 from the carbon nanotube array 201040105; as shown in FIG. 4C, the first and the A plurality of carbon nanotube segments 201, 202 are separated from the array of carbon nanotubes. (5) Pulling a third carbon nanotube segment 203 adjacent to and adjacent to the second carbon nanotube segment 202 at the top of the carbon nanotube array.
重複上述環節（2)到（5)，便可得到所述奈米碳管膜20。 虽拉取完所述奈米碳管陣列或者直接從奈米碳管陣列上取 下所述奈米碳管膜2〇。請參見圖5，該奈米碳管膜20具有 複數間隔設置之第一區域204和複數分別設置在相鄰之兩 個第區域204之間之第二區域205。所述第一區域204 與第二區域2〇5沿奈米碳管之軸向方向連續交替分佈，從 膜 文項砹紋狀奈米碳管膜20。而，在戎石及 且同 20之奈米碳管首尾相連地通過凡德瓦爾力連接， 方向擇優取向排列。 與，上述之奈米碳管膜20之形成過程中，環節（2)到（3) 、=谛（4)到（5)係兩個不同之子環節。假定奈米碳管陣列中 2長度記為L，則在環節(2)中’抽取裝置30沿 中方向移動之距離^為， 拉伸方向移動之距離△如以 節中抽叫置30在沿拉伸方向導致在這 =距。然，在環節⑺與環節(4)中所會產山生一個^ ，出速度-致之情況下，在環 次…卡兔管膜20之. ::列之拉出速度要小於在環節(4)中奈米碳 、又。正係因為在環節(2)與(4)之奈米石户:；、石反管之拉出 \導致在環節(2)與_形成之出速度之不 —致’從㈣成不同密度之區域。請參 201040105 該奈米碳管膜20由複數大致沿同一個方向排列之奈米碳 管形成。該奈米碳管膜20包括複數間隔設置之第一區域 204和複數分別設置在相鄰之兩個第一區域204之間之第 . 二區域205。所述奈米碳管膜20之第一區域204在環節（2) 到（3)中獲得，而第二區域205在環節（4)到（5)中獲得。所述 第一區域204中之奈米碳管之分佈密度大於第二區域205 中之奈米碳管之分佈密度。圖5係從一奈米碳管高度為 400mm之奈米碳管陣列中拉取出來之奈米碳管膜20，圖6 〇 係從一奈米碳管高度為600mm之奈米碳管陣列中拉取出 來之奈米碳管膜20，其抽取裝置30之抽取方向與奈米碳 管之生長方向之間之銳角角度《都為65度。 當該奈米碳管膜20用作發光器件時，可以在奈米碳管 膜20之沿奈米碳管軸向兩端分別設置至少一電極（圖未 示），然後通以電流，該奈米碳管膜20即可發光。 由於奈米碳管係一維奈米材料，具有軸嚮導電性，電 子之移動被限定在奈米碳管軸向方向。通常電阻加熱之燈 〇 絲發光係由移動電子之發光而產生，與燈絲類似，當奈米 碳管通以電流時，該奈米碳管便可以發出光。由於電子之 移動被限定在奈米碳管軸向方向，使得奈米碳管發出之光 為偏振方向平行于奈米碳管軸向之偏振光。 進一步，由於所述奈米碳管膜20具有複數間隔設置之 第一區域204和複數分別設置在相鄰之兩個第一區域204 之間之第二區域205。在這裏，為形象化，所述奈米碳管 之分佈密度大之第一區域204可稱之為密區，而相對於第 一區域204，奈米碳管之分佈密度小之第二區域205可稱 11 201040105 之為疏區。請參閱圖8，其為 度與偏振度之關係圖。在該圖8同奈米碳管高度之拉出角 為235μιη、410μιη以及中其奈米碳管尚度分別 密區之奈米碳管之分佈密度:隨著拉伸角度之增大， 大’從而使得疏區之電阻盘.:之刀佈⑧度之差值會增 大，從而進一步使得後區;之差值也進-步增 差值也進-步增大。度與密區之發光強度之 ΟThe carbon nanotube film 20 can be obtained by repeating the above steps (2) to (5). The carbon nanotube film is removed or the carbon nanotube film 2 is removed directly from the carbon nanotube array. Referring to Fig. 5, the carbon nanotube film 20 has a plurality of spaced apart first regions 204 and a plurality of second regions 205 disposed between adjacent two first regions 204, respectively. The first region 204 and the second region 2〇5 are continuously alternately distributed along the axial direction of the carbon nanotubes, from the membrane text of the striated carbon nanotube membrane 20. However, in the vermiculite and the 20 carbon nanotubes are connected end to end by Van der Waals force, the direction is preferred. In the formation process of the above-mentioned carbon nanotube film 20, the links (2) to (3) and = 谛 (4) to (5) are two different sub-links. Assuming that the length of 2 in the carbon nanotube array is denoted by L, then in the link (2), the distance ^ of the extracting device 30 moving in the middle direction is, and the distance in the stretching direction is Δ as in the section. The direction of stretching results in this = distance. However, in the link (7) and link (4), the production of the mountain will produce a ^, the speed of the case - in the case of the ring ... the rabbit tube film 20. :: column pull out speed is less than in the link ( 4) Medium carbon, and again. The reason is because the nano-stone households in the links (2) and (4):;, the pull-out of the stone back-pipes, resulting in the speed of the formation of the link (2) and _--from the (four) into different densities region. Please refer to 201040105. The carbon nanotube film 20 is formed by a plurality of carbon nanotubes arranged substantially in the same direction. The carbon nanotube film 20 includes a plurality of spaced apart first regions 204 and a plurality of second regions 205 disposed between adjacent two first regions 204, respectively. The first region 204 of the carbon nanotube film 20 is obtained in the links (2) to (3), and the second region 205 is obtained in the links (4) to (5). The distribution density of the carbon nanotubes in the first region 204 is greater than the distribution density of the carbon nanotubes in the second region 205. Fig. 5 is a carbon nanotube film 20 taken out from a carbon nanotube array having a carbon nanotube height of 400 mm, and Fig. 6 is a carbon nanotube array having a height of 600 mm from a carbon nanotube. The carbon nanotube film 20 is taken out, and the acute angle between the extraction direction of the extraction device 30 and the growth direction of the carbon nanotubes is 65 degrees. When the carbon nanotube film 20 is used as a light-emitting device, at least one electrode (not shown) may be disposed on both ends of the carbon nanotube film 20 along the axial direction of the carbon nanotube, and then the current is passed. The carbon nanotube film 20 can emit light. Since the carbon nanotubes are one-dimensional nanomaterials with axial conductivity, the movement of electrons is limited to the axial direction of the carbon nanotubes. Usually, the resistance heating lamp 〇 filament illumination is generated by the illuminating of moving electrons. Similar to the filament, the carbon nanotube emits light when the carbon nanotube is energized. Since the movement of electrons is limited to the axial direction of the carbon nanotubes, the light emitted by the carbon nanotubes is polarized light whose polarization direction is parallel to the axial direction of the carbon nanotubes. Further, since the carbon nanotube film 20 has a plurality of spaced apart first regions 204 and a plurality of second regions 205 respectively disposed between the adjacent two first regions 204. Here, for visualization, the first region 204 in which the distribution density of the carbon nanotubes is large may be referred to as a dense region, and the second region 205 in which the distribution density of the carbon nanotubes is small relative to the first region 204 is 205. Can be called 11 201040105 as a sparse zone. Please refer to Figure 8, which is a plot of degree versus degree of polarization. In Figure 8, the pull-out angle of the carbon nanotube height is 235μιη, 410μιη, and the distribution density of the carbon nanotubes in the dense area of the carbon nanotubes: the tensile angle increases, the large Therefore, the difference of 8 degrees of the knife disc of the sparse zone will increase, thereby further making the back zone; the difference also increases the step-by-step increment. The intensity of light and the intensity of the dense area
得多’因此，當疏區之分佈振度^&要大 辦大刀佈在度與雄、區之分佈密度之差值 丄奈米碳⑼2〇之偏振度也相應增 平W 魏著拉Λ肖度之敎，所拉出之奈 未奴管膜之偏振度也相應地增大。 區琉第一區域2叫複數分別設置在相鄰之兩個第一 同^ t間之第二區域2〇5之奈米碳管之分佈密度不 心^疏區之電阻與密區之電阻之差值也不同，從而使 區之發光強度與密區之發光強度之差值也不同，因 二’由該奈米碳管臈2G製成之發光器件可以發出明暗相間 m大之光’其可以應用於一些廣告或各種燈光效應 中’如舞台所用之燈光。 可以理解，當所述奈米礙管膜2〇用作發光器件時，該 件還可以包括-支撐體（圖未示）。該支樓體用於支 二示米碳㈣。該支撐體可以為—透明基板，所述奈米 反s膜2G m靖明基板表面。該支禮體還可以為一框 ^巧。所述框形支架包括—上基板和—下基板，所述奈 米石反管膜20夾設在所述上、下基板之間。 上述之奈米奴官膜20當然還可以應用到導熱、導電、 12 201040105 抗靜電薄膜、電磁遮罩、超級電容器、阻燃、催化電極、 應變規、平面顯示等複數技術領域。 在上述製造奈米碳管膜之方法中，使抽取裝置之抽取 . 方向與奈米碳管之生長方向之間之銳角之角度小於等於80 度以抽取得一奈米碳管膜，從而製造出一可控制該奈米碳 管膜中之奈米碳管之分佈規律之奈米碳管膜，即該奈米碳 管膜中之第一區域中之奈米破管之分佈密度大於第二區域 之奈米碳管之分佈密度之分佈規律。 〇 綜上所述，本發明確已符合發明專利之要件，遂依法 . 提出專利申請。惟，以上所述者僅為本發明之較佳實施例， • 自不能以此限制本案之申請專利範圍。舉凡熟悉本案技藝 • 之人士援依本發明之精神所作之等效修飾或變化，皆應涵 蓋於以下申請專利範圍内。 【圖式簡單說明】 圖1係製造本發明所述之奈米碳管膜之方法流程圖。 圖2係在圖1之製造方法中所形成之奈米碳管膜前驅 〇 之結構示意圖。 圖3係製備用於拉取圖1之奈米碳管膜之奈米碳管陣 列之方法流程圖。 圖4A-4C係圖1之製造方法所製備之奈米碳管膜在不 同分取環節之結構示意圖。 圖5係圖1之製造方法所製備之奈米碳管膜之結構示 意圖。 圖6係圖1之製造方法所製備之一種奈米碳管膜之電 鏡圖。 13 201040105 圖7係圖1之製造方法所製備之另一種奈米碳管膜之 電鏡圖。 圖8係從不同高度之奈米碳管陣列拉出之奈米碳管膜 . 之拉出角度與其偏振度之關係圖。 【主要元件符號說明】 奈米碳管膜 20 第一奈米碳管片段 201 第二奈米碳管片段 202 第三奈米碳管片段 203 第一區域 204 第二區域 205 催化劑層 21 基底 22 拉取裝置 30 14Much more', therefore, when the distribution of vibrations in the sparse zone ^& the greater the difference between the density of the large knife and the distribution density of the male and the regional, the polarization of the nanocarbon (9) 2〇 is also increased. At the top of the degree of Xiaodu, the degree of polarization of the film that was pulled out was also increased accordingly. The first region 2 of the zone is called the complex number, and the distribution density of the carbon nanotubes in the second zone 2〇5 between the two adjacent first and second zones is not the resistance of the zone and the resistance of the zone. The difference is also different, so that the difference between the luminous intensity of the zone and the luminous intensity of the dense zone is different, because the light-emitting device made of the carbon nanotube 臈 2G can emit light of light and dark Used in some advertisements or various lighting effects, such as the lights used in the stage. It will be understood that when the nanotube film 2 is used as a light-emitting device, the member may further include a support (not shown). The branch body is used to support two meters of carbon (four). The support may be a transparent substrate, and the surface of the nano-anti-s film 2G m Jingming substrate. The ceremonial body can also be a frame. The frame-shaped bracket includes an upper substrate and a lower substrate, and the nano-reverse film 20 is interposed between the upper and lower substrates. The above-mentioned nano slave film 20 can of course be applied to the fields of heat conduction, electric conduction, anti-static film of 201040105, electromagnetic mask, super capacitor, flame retardant, catalytic electrode, strain gauge, flat display and the like. In the above method for producing a carbon nanotube film, an angle of an acute angle between a direction of extraction of the extraction device and a growth direction of the carbon nanotube is less than or equal to 80 degrees to obtain a carbon nanotube film, thereby producing a carbon nanotube film capable of controlling the distribution of the carbon nanotubes in the carbon nanotube film, that is, the distribution density of the nanotubes in the first region of the carbon nanotube film is greater than that of the second region The distribution law of the distribution density of the carbon nanotubes.综 In summary, the present invention has indeed met the requirements of the invention patent, and has filed a patent application according to law. However, the above description is only a preferred embodiment of the present invention, and • the scope of the patent application in this case cannot be limited thereby. Equivalent modifications or variations made by those skilled in the art of the present invention in light of the spirit of the present invention are intended to be within the scope of the following claims. BRIEF DESCRIPTION OF THE DRAWINGS Fig. 1 is a flow chart showing a method of producing a carbon nanotube film according to the present invention. Fig. 2 is a schematic view showing the structure of a carbon nanotube film precursor 形成 formed in the manufacturing method of Fig. 1. Figure 3 is a flow chart showing the method of preparing a carbon nanotube array for drawing the carbon nanotube film of Figure 1. 4A-4C are schematic views showing the structure of the carbon nanotube film prepared by the manufacturing method of Fig. 1 at different dispensing steps. Fig. 5 is a view showing the structure of a carbon nanotube film prepared by the production method of Fig. 1. Figure 6 is an electron micrograph of a carbon nanotube film prepared by the manufacturing method of Figure 1. 13 201040105 Figure 7 is an electron micrograph of another carbon nanotube film prepared by the manufacturing method of Figure 1. Figure 8 is a graph showing the relationship between the pull-out angle and the degree of polarization of a carbon nanotube film pulled from a carbon nanotube array of different heights. [Main component symbol description] Nano carbon nanotube film 20 First carbon nanotube segment 201 Second carbon nanotube segment 202 Third carbon nanotube segment 203 First region 204 Second region 205 Catalyst layer 21 Substrate 22 Pull Take device 30 14