CN108803171B - 阵列基板、液晶显示屏及阵列基板制造方法 - Google Patents
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Abstract
本发明提供了本发明所述的阵列基板,其包括玻璃基板、像素电极、绝缘层、源极、漏极、有源层、钝化层和栅极,所述像素电极设于玻璃基板的表面,所述绝缘层覆盖所述像素电极和玻璃基板,所述绝缘层包括呈阶梯设置的第一台面和第二台面,所述源极设于所述第一台面上,所述漏极设于第二台面并穿过所述绝缘层与所述像素电极连接,所述有源层位于所述第一台面和第二台面上并连接源极和漏极之间,所述钝化层覆盖所述源极、漏极及有源层,所述栅极位于所述钝化层上与所述有源层相对设置。
Description
技术领域
本发明涉及液晶显示屏制造技术领域,特别涉及一种阵列基板、液晶显示屏及阵列基板制造方法。
背景技术
在TFT-LCD(thin film transistor-liquid crystal)薄膜晶体管显示器中,阵列基板通常使用的TFT器件结构为源极与漏极在同一层,栅极与源极漏极平行设置位于源漏极下一层,此类结构占用阵列基板的横向面积较大,在基板有限空间内会影响开口率,而且多次采用高温制程,影响TFT产品的柔韧性。
发明内容
本发明的目的在于提供一种提高开口率的阵列基板、液晶显示屏以及阵列基板制作方法。
本发明所述的阵列基板,其包括玻璃基板、像素电极、绝缘层、源极、漏极、有源层、钝化层和栅极,所述像素电极设于玻璃基板的表面,所述绝缘层覆盖所述像素电极和玻璃基板,所述绝缘层包括呈阶梯设置的第一台面和第二台面,所述源极设于所述第一台面上,所述漏极设于第二台面并穿过所述绝缘层与所述像素电极连接,所述有源层位于所述第一台面和第二台面上并连接源极和漏极之间,所述钝化层覆盖所述源极、漏极及有源层,所述栅极位于所述钝化层上与所述有源层相对设置。
其中,所述绝缘层为有机感光型材料制成。
其中,所述绝缘层的第二台面上设有贯穿所述绝缘层的过孔,所述漏极穿过过孔与所述像素电极连接。
本发明所述的阵列基板制作方法,其包括,在玻璃基板上形成像素电极和覆盖像素电极的绝缘材料层,其中,所述绝缘材料层为有机感光型材料形成;
通过光刻掩膜板对绝缘材料层图案化形成绝缘层,其中,所述绝缘层包括呈阶梯设置的第一台面和第二台面及贯穿第二台面的过孔,第一台面高于第二台面;
在所述绝缘层上形成金属层并图案化所述金属层形成源极和漏极,其中,源极位于所述第一台面上,漏极位于第二台面上且通过所述过孔与所述像素电极连接;
在所述第一台面和第二台面上形成连接于所述源极与漏极之间的有源层;
在有源层、源极、漏极及绝缘层上形成钝化层;
在钝化层上形成栅极,其中栅极位于所述有源层之上。
其中,通过光刻掩膜板对绝缘材料层图案化形成绝缘层的步骤包括:
提供一掩膜板,掩膜板包括不透光区、两个半透光区及位于两个半透光区之间的全透光区;
将掩膜板放置于所述绝缘材料层上方并进行光罩,在所述绝缘材料层上形成与所述不透光区对应所述第一台面,与两个所述半透光区对应的第二台面,及与所述全透光区对应的所述过孔。
其中,所述掩膜板为半色调掩膜板。
其中,在所述绝缘层上形成金属层并图案化所述金属层形成源极和漏极的步骤中,是通过在所述绝缘层上通过气相沉积、或者涂布或打印方法制作金属层,通过光刻工艺及蚀刻工艺图案化所述金属层,形成所述源极和漏极。
其中,在所述第一台面和第二台面上形成连接于所述源极与漏极之间的有源层的步骤中,采用物理气相沉积、化学气相沉积、涂布或打印方法制作有源膜层,并光刻工艺及蚀刻图案化有源膜层,在所述第一台面、第一台面与第二台面连接处及第二台面上形成所述有源层。
其中,在有源层、源极、漏极及绝缘层上形成钝化层的步骤中,是采用物理气相沉积、化学气相沉积、涂布或打印方法形成。
本发明提供一种液晶显示屏,其包括所述的阵列基板、彩膜基板和位于阵列基板和彩膜基板之间的液晶层。
本发明所述的阵列基板将源极和漏极设置于两个呈阶梯的高低台面上,减小源极和漏极之间的间距,即减小沟道区域的宽度,从而减小源极和漏极在阵列基板横向方向占用面积,即减小薄膜晶体管的占用面积,进而实现提高开口率的目的。
附图说明
为了更清楚地说明本发明实施例或现有技术中的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本发明的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。
图1是本发明所述的阵列基板的结构示意图。
图2是本发明所述的阵列基板制作方法的流程图。
图3至图5是图2所示的阵列基板制作方法中部分步骤的结构图。
具体实施方式
下面将结合本发明实施例中的附图,对本发明实施例中的技术方案进行清楚、完整地描述,显然,所描述的实施例仅仅是本发明一部分实施例,而不是全部的实施例。基于本发明中的实施例,本领域普通技术人员在没有作出创造性劳动前提下所获得的所有其他实施例,都属于本发明保护的范围。
请参阅图1,本发明提供一种液晶显示屏和用于液晶显示屏的阵列基板,液晶显示屏如TFT-LCD显示屏,柔性显示屏等。所述液晶显示屏包括所述阵列基板、彩膜基板及封于阵列基板和彩膜基板之间的液晶层,以及背光源。所述阵列基板包括玻璃基板10、像素电极11、绝缘层12、TFT薄膜晶体管及钝化层16。所述像素电极11设于玻璃基板的表面。所述TFT薄膜晶体管包括源极13、漏极14、有源层15和栅极17。
所述绝缘层12覆盖所述像素电极11和玻璃基板10。所述绝缘层12包括呈阶梯设置的第一台面121和第二台面122,所述第一台面121和第二台面122远离所述玻璃基板10的表面,所述第一台面121竖直方向上高于第二台面122。所述源极13设于所述第一台面121上,所述漏极14设于第二台面122并穿过所述绝缘层12与所述像素电极11连接。本实施例中,所述绝缘层12为有机感光型材料制成,便于在制作过程中利用光刻工艺图案化,以避免使用高温制程影响其柔韧性,利于柔性显示面板的制作。所述绝缘层12的第二台面122上设有贯穿所述绝缘层12的过孔,所述漏极14穿过过孔与所述像素电极11连接。
所述有源层15位于所述第一台面121和第二台面122上并连接源极13和漏极14之间。具体的所述有源层15覆盖第一台面121和第二台面122连接处且相对两侧分别连接源极13和漏极14。所述有源层15远离所述绝缘层12的表面随着源极13、第一台面121、第二台面122及漏极14构成的阶梯状形成为多个阶梯面,而并非平面,如此可以减小有源层的厚度。所述钝化层16覆盖所述源极13、漏极14及有源层15,所述栅极17位于所述钝化层16上与所述有源层15相对设置,即所述栅极16的正投影会落入所述有源层15上。其中,位于源极13、第一台面121、第二台面122、有源层15及漏极14构成的阶梯状分布的位置,所述钝化层16和栅极17远离基板的表面都是多个阶梯状,进而避免厚度上尺寸过大。
阵列基板还包括多条栅线和数据线(图未示),栅线和数据线交叉形成多个显示单元,每个显示单元设置有一个所述TFT薄膜晶体管和所述像素电极11。TFT-LCD的显示原理为:通过栅线和数据线控制每个薄膜晶体管的开闭,向对应的像素电极写入图像信号,以实现显示。实际应用中,为了保证向显示单元的像素电极即时准确的写入图像信号,薄膜晶体管的开态电流要大,且为了提高显示图像的亮度,显示单元的开口率要大。本发明所述的阵列基板将源极13和漏极14设置于两个呈阶梯的高低台面上,减小源极13和漏极14之间的间距,即减小沟道区域的宽度,从而减小源极和漏极在阵列基板横向方向占用面积,即减小薄膜晶体管的占用面积,进而实现提高开口率的目的。
请参阅图2,本发明还提供一种阵列基板制作方法,其包括:
一并参阅图3,步骤S1,在玻璃基板10上形成像素电极11和覆盖像素电极11的绝缘材料层120,其中,所述绝缘材料层120为有机感光型材料形成。所述像素电极11通过物理或化学气相沉积、或者涂布或打印方法制作成膜后,光刻工艺图案化膜层后形成所述像素电极。所述绝缘材料层120通过涂布或者打印的方式形成。
请参阅图4,步骤S2,通过光刻掩膜板对绝缘材料层图案化形成绝缘层12,其中,所述绝缘层12包括呈阶梯设置的第一台面121和第二台面122及贯穿第二台面122的过孔123,第一台面121高于第二台面122;所述掩膜板为半色调掩膜板。具体的:
提供所述的掩膜板20,掩膜板20包括不透光区21、两个半透光区22及位于两个半透光区22之间的全透光区23;
将掩膜板20放置于所述绝缘材料层120上方并进行光罩,在所述绝缘材料层120上形成与所述不透光区21对应所述第一台面121,与两个所述半透光区22对应的第二台面122,及与所述全透光区23对应的所述过孔123,进而使绝缘材料层120形成所述绝缘层12。由于绝缘材料层为感光性材料形成,再通过掩膜板即可实现图案化,无需蚀刻工艺和避免高温制程,减少制程,保证绝缘层的柔韧性。
请参阅图5,步骤S3,在所述绝缘层12上形成金属层并图案化所述金属层形成源极13和漏极14,其中,源极13位于所述第一台面121上,漏极14位于第二台面122上且通过所述过孔与所述像素电极11连接。本步骤中是通过在所述绝缘层12上通过气相沉积、或者涂布或打印方法制作金属层,通过光刻工艺及蚀刻工艺图案化所述金属层,形成所述源极13和漏极14。
步骤S4,在所述第一台面121和第二台面122上形成连接于所述源极13与漏极14之间的有源层15;本步骤中,采用物理气相沉积、化学气相沉积、涂布或打印方法制作有源膜层,并光刻工艺及蚀刻图案化有源膜层,在所述第一台面121、第一台面121与第二台面122连接处及第二台面122上形成所述有源层15。
步骤S5,在有源层15、源极13、漏极14及绝缘层12上形成钝化层16;本步骤中是采用物理气相沉积、化学气相沉积、涂布或打印方法形成。
步骤S6,在钝化层16上形成栅极17,其中栅极17位于所述有源层15之上。
本发明所述的阵列基板的制作方法中,将源极和漏极分层设置,减小源极和漏极之间的间距,并且在形成绝缘层时采用掩膜板光罩即可,整个制程过程中减少高温制程,并减少蚀刻工序。
以上所揭露的仅为本发明较佳实施例而已,当然不能以此来限定本发明之权利范围,本领域普通技术人员可以理解实现上述实施例的全部或部分流程,并依本发明权利要求所作的等同变化,仍属于发明所涵盖的范围。
Claims (10)
1.一种阵列基板,其特征在于,包括玻璃基板、像素电极、绝缘层、源极、漏极、有源层、钝化层和栅极,所述像素电极设于玻璃基板的表面,所述绝缘层覆盖所述像素电极和玻璃基板,所述绝缘层包括呈阶梯设置的第一台面和第二台面,所述第一台面竖直方向上高于所述第二台面,所述源极设于所述第一台面上,所述漏极设于第二台面并穿过所述绝缘层与所述像素电极连接,所述有源层位于所述第一台面和第二台面上并连接源极和漏极之间,所述钝化层覆盖所述源极、漏极及有源层,所述栅极位于所述钝化层上与所述有源层相对设置。
2.根据权利要求1所述的阵列基板,其特征在于,所述绝缘层为有机感光型材料制成。
3.根据权利要求2所述的阵列基板,其特征在于,所述绝缘层的第二台面上设有贯穿所述绝缘层的过孔,所述漏极穿过过孔与所述像素电极连接。
4.一种阵列基板制作方法,其特征在于,包括,在玻璃基板上形成像素电极和覆盖像素电极的绝缘材料层,其中,所述绝缘材料层为有机感光型材料形成;
通过光刻掩膜板对绝缘材料层图案化形成绝缘层,其中,所述绝缘层包括呈阶梯设置的第一台面和第二台面及贯穿第二台面的过孔,第一台面高于第二台面;
在所述绝缘层上形成金属层并图案化所述金属层形成源极和漏极,其中,源极位于所述第一台面上,漏极位于第二台面上且通过所述过孔与所述像素电极连接;
在所述第一台面和第二台面上形成连接于所述源极与漏极之间的有源层;
在有源层、源极、漏极及绝缘层上形成钝化层;
在钝化层上形成栅极,其中栅极位于所述有源层之上。
5.根据权利要求4所述的阵列基板制作方法,其特征在于,通过光刻掩膜板对绝缘材料层图案化形成绝缘层的步骤包括:
提供一掩膜板,掩膜板包括不透光区、两个半透光区及位于两个半透光区之间的全透光区;
将掩膜板放置于所述绝缘材料层上方并进行光照 ,在所述绝缘材料层上形成与所述不透光区对应所述第一台面,与两个所述半透光区对应的第二台面,及与所述全透光区对应的所述过孔。
6.根据权利要求5所述的阵列基板制作方法,其特征在于,所述掩膜板为半色调掩膜板。
7.根据权利要求4所述的阵列基板制作方法,其特征在于,在所述绝缘层上形成金属层并图案化所述金属层形成源极和漏极的步骤中,是通过在所述绝缘层上通过气相沉积、或者涂布或打印方法制作金属层,通过光刻工艺及蚀刻工艺图案化所述金属层,形成所述源极和漏极。
8.根据权利要求4所述的阵列基板制作方法,其特征在于,在所述第一台面和第二台面上形成连接于所述源极与漏极之间的有源层的步骤中,采用物理气相沉积、化学气相沉积、涂布或打印方法制作有源膜层,并光刻工艺及蚀刻图案化有源膜层,在所述第一台面、第一台面与第二台面连接处及第二台面上形成所述有源层。
9.根据权利要求4所述的阵列基板制作方法,其特征在于,在所述有源层、源极、漏极及绝缘层上形成钝化层的步骤中,是采用物理气相沉积、化学气相沉积、涂布或打印方法形成。
10.一种液晶显示屏,其特征在于,包括权利要求1-3任一项所述的阵列基板、彩膜基板和位于阵列基板和彩膜基板之间的液晶层。
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