CN108673332A - 多孔聚氨酯抛光垫及通过采用该抛光垫制备半导体器件的方法 - Google Patents
多孔聚氨酯抛光垫及通过采用该抛光垫制备半导体器件的方法 Download PDFInfo
- Publication number
- CN108673332A CN108673332A CN201810493335.XA CN201810493335A CN108673332A CN 108673332 A CN108673332 A CN 108673332A CN 201810493335 A CN201810493335 A CN 201810493335A CN 108673332 A CN108673332 A CN 108673332A
- Authority
- CN
- China
- Prior art keywords
- polishing pad
- polished
- cellular polyurethane
- afm
- polished surface
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
Classifications
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
- B24B37/00—Lapping machines or devices; Accessories
- B24B37/11—Lapping tools
- B24B37/20—Lapping pads for working plane surfaces
- B24B37/26—Lapping pads for working plane surfaces characterised by the shape of the lapping pad surface, e.g. grooved
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B24—GRINDING; POLISHING
- B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
- B24D3/00—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents
- B24D3/02—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent
- B24D3/20—Physical features of abrasive bodies, or sheets, e.g. abrasive surfaces of special nature; Abrasive bodies or sheets characterised by their constituents the constituent being used as bonding agent and being essentially organic
- B24D3/28—Resins or natural or synthetic macromolecular compounds
- B24D3/32—Resins or natural or synthetic macromolecular compounds for porous or cellular structure
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G18/00—Polymeric products of isocyanates or isothiocyanates
- C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
- C08G18/08—Processes
- C08G18/10—Prepolymer processes involving reaction of isocyanates or isothiocyanates with compounds having active hydrogen in a first reaction step
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G18/00—Polymeric products of isocyanates or isothiocyanates
- C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
- C08G18/08—Processes
- C08G18/16—Catalysts
- C08G18/18—Catalysts containing secondary or tertiary amines or salts thereof
- C08G18/20—Heterocyclic amines; Salts thereof
- C08G18/2009—Heterocyclic amines; Salts thereof containing one heterocyclic ring
- C08G18/2027—Heterocyclic amines; Salts thereof containing one heterocyclic ring having two nitrogen atoms in the ring
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G18/00—Polymeric products of isocyanates or isothiocyanates
- C08G18/06—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen
- C08G18/28—Polymeric products of isocyanates or isothiocyanates with compounds having active hydrogen characterised by the compounds used containing active hydrogen
- C08G18/30—Low-molecular-weight compounds
- C08G18/32—Polyhydroxy compounds; Polyamines; Hydroxyamines
- C08G18/3225—Polyamines
- C08G18/3237—Polyamines aromatic
- C08G18/3243—Polyamines aromatic containing two or more aromatic rings
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J9/00—Working-up of macromolecular substances to porous or cellular articles or materials; After-treatment thereof
- C08J9/32—Working-up of macromolecular substances to porous or cellular articles or materials; After-treatment thereof from compositions containing microballoons, e.g. syntactic foams
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67092—Apparatus for mechanical treatment
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G2110/00—Foam properties
- C08G2110/0041—Foam properties having specified density
- C08G2110/0066—≥ 150kg/m3
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2203/00—Foams characterized by the expanding agent
- C08J2203/22—Expandable microspheres, e.g. Expancel®
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2205/00—Foams characterised by their properties
- C08J2205/04—Foams characterised by their properties characterised by the foam pores
- C08J2205/044—Micropores, i.e. average diameter being between 0,1 micrometer and 0,1 millimeter
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2205/00—Foams characterised by their properties
- C08J2205/04—Foams characterised by their properties characterised by the foam pores
- C08J2205/05—Open cells, i.e. more than 50% of the pores are open
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2207/00—Foams characterised by their intended use
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08J—WORKING-UP; GENERAL PROCESSES OF COMPOUNDING; AFTER-TREATMENT NOT COVERED BY SUBCLASSES C08B, C08C, C08F, C08G or C08H
- C08J2375/00—Characterised by the use of polyureas or polyurethanes; Derivatives of such polymers
- C08J2375/04—Polyurethanes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/32115—Planarisation
- H01L21/3212—Planarisation by chemical mechanical polishing [CMP]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/52—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames
- H01L23/522—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body
- H01L23/532—Arrangements for conducting electric current within the device in operation from one component to another, i.e. interconnections, e.g. wires, lead frames including external interconnections consisting of a multilayer structure of conductive and insulating layers inseparably formed on the semiconductor body characterised by the materials
- H01L23/53204—Conductive materials
- H01L23/53209—Conductive materials based on metals, e.g. alloys, metal silicides
- H01L23/53257—Conductive materials based on metals, e.g. alloys, metal silicides the principal metal being a refractory metal
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Mechanical Engineering (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Materials Engineering (AREA)
- Mechanical Treatment Of Semiconductor (AREA)
- Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
- Manufacture Of Porous Articles, And Recovery And Treatment Of Waste Products (AREA)
- Polyurethanes Or Polyureas (AREA)
Abstract
Description
Claims (11)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1020170066076A KR101835090B1 (ko) | 2017-05-29 | 2017-05-29 | 다공성 폴리우레탄 연마패드 및 이를 사용하여 반도체 소자를 제조하는 방법 |
KR10-2017-0066076 | 2017-05-29 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN108673332A true CN108673332A (zh) | 2018-10-19 |
CN108673332B CN108673332B (zh) | 2021-04-27 |
Family
ID=61727168
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201810493335.XA Active CN108673332B (zh) | 2017-05-29 | 2018-05-22 | 多孔聚氨酯抛光垫及通过采用该抛光垫制备半导体器件的方法 |
Country Status (5)
Country | Link |
---|---|
US (1) | US10518383B2 (zh) |
JP (1) | JP6636568B2 (zh) |
KR (1) | KR101835090B1 (zh) |
CN (1) | CN108673332B (zh) |
TW (1) | TWI728246B (zh) |
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN110003668A (zh) * | 2019-03-06 | 2019-07-12 | 中国科学院上海光学精密机械研究所 | 多微孔结构的沥青抛光盘及其制备方法 |
CN112423935A (zh) * | 2018-06-29 | 2021-02-26 | 圣戈班磨料磨具有限公司 | 磨料制品及其形成方法 |
CN112571303A (zh) * | 2019-09-29 | 2021-03-30 | Skc株式会社 | 抛光垫、该抛光垫的制造方法及使用该抛光垫的抛光方法 |
CN114434318A (zh) * | 2020-11-06 | 2022-05-06 | Skc索密思株式会社 | 抛光垫及其制备方法以及使用其的半导体器件的制造方法 |
CN114762953A (zh) * | 2020-12-30 | 2022-07-19 | Skc索密思株式会社 | 抛光垫、抛光垫的制备方法及半导体器件的制造方法 |
Families Citing this family (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101853021B1 (ko) * | 2017-01-12 | 2018-04-30 | 에스케이씨 주식회사 | 다공성 폴리우레탄 연마패드 및 이의 제조방법 |
KR102054309B1 (ko) * | 2018-04-17 | 2019-12-10 | 에스케이씨 주식회사 | 다공성 연마 패드 및 이의 제조방법 |
KR102058877B1 (ko) * | 2018-04-20 | 2019-12-24 | 에스케이씨 주식회사 | 다공성 폴리우레탄 연마패드 및 이의 제조방법 |
TWI741753B (zh) * | 2019-10-29 | 2021-10-01 | 南韓商Skc索密思股份有限公司 | 研磨墊、製造該研磨墊之方法及使用該研磨墊以製造半導體裝置之方法 |
KR102304965B1 (ko) * | 2019-10-30 | 2021-09-24 | 에스케이씨솔믹스 주식회사 | 연마패드, 이의 제조방법, 및 이를 이용한 반도체 소자의 제조방법 |
KR102188525B1 (ko) * | 2019-10-29 | 2020-12-08 | 에스케이씨 주식회사 | 연마패드, 이의 제조방법, 및 이를 이용한 반도체 소자의 제조방법 |
KR102293781B1 (ko) * | 2019-11-11 | 2021-08-25 | 에스케이씨솔믹스 주식회사 | 연마패드, 이의 제조방법 및 이를 이용한 반도체 소자의 제조방법 |
KR102177748B1 (ko) * | 2019-11-28 | 2020-11-11 | 에스케이씨 주식회사 | 다공성 연마 패드 및 이의 제조방법 |
KR102293801B1 (ko) * | 2019-11-28 | 2021-08-25 | 에스케이씨솔믹스 주식회사 | 연마패드, 이의 제조방법 및 이를 이용한 반도체 소자의 제조방법 |
US20210394334A1 (en) * | 2020-06-19 | 2021-12-23 | Skc Solmics Co., Ltd. | Polishing pad, preparation method thereof and method for preparing semiconductor device using same |
US11759909B2 (en) * | 2020-06-19 | 2023-09-19 | Sk Enpulse Co., Ltd. | Polishing pad, preparation method thereof and method for preparing semiconductor device using same |
CN114310656B (zh) * | 2020-09-29 | 2024-03-08 | Sk恩普士有限公司 | 抛光垫、抛光垫的制造方法及半导体器件的制造方法 |
KR102502516B1 (ko) * | 2021-03-12 | 2023-02-23 | 에스케이엔펄스 주식회사 | 연마 패드, 연마 패드의 제조 방법 및 이를 이용한 반도체 소자의 제조 방법 |
KR102488101B1 (ko) * | 2021-05-04 | 2023-01-12 | 에스케이엔펄스 주식회사 | 연마 패드, 연마 패드의 제조 방법 및 이를 이용한 반도체 소자의 제조 방법 |
US20230127390A1 (en) * | 2021-10-27 | 2023-04-27 | Entegris, Inc. | Polishing of polycrystalline materials |
Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040021243A1 (en) * | 2002-08-02 | 2004-02-05 | Wen-Chang Shih | Method for manufacturing auxiliary gas-adding polyurethae/polyurethane-urea polishing pad |
CN101175603A (zh) * | 2005-05-18 | 2008-05-07 | 东洋橡胶工业株式会社 | 抛光垫、其生产方法及使用其生产半导体器件的方法 |
CN103252729A (zh) * | 2012-02-20 | 2013-08-21 | Kpx化工有限公司 | 抛光垫及其制造方法 |
CN103386648A (zh) * | 2012-05-11 | 2013-11-13 | 罗门哈斯电子材料Cmp控股股份有限公司 | 空心的聚合物-碱土金属氧化物复合体 |
KR20140112577A (ko) * | 2010-10-15 | 2014-09-23 | 넥스플래너 코퍼레이션 | 다중 모드 분포의 기공 직경을 가지는 연마 패드 |
CN104416452A (zh) * | 2013-08-30 | 2015-03-18 | 罗门哈斯电子材料Cmp控股股份有限公司 | 化学机械抛光垫 |
Family Cites Families (15)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
DE4209711A1 (de) | 1992-03-25 | 1993-09-30 | Bayer Ag | Expandierbare, treibmittelhaltige Polyurethan-Pulverzubereitungen sowie ihre Verwendung zur Herstellung geschäumter Polyurethan-Formkörper |
JP2001232555A (ja) | 2000-02-23 | 2001-08-28 | Matsushita Electric Ind Co Ltd | 平坦化方法 |
TWI385050B (zh) * | 2005-02-18 | 2013-02-11 | Nexplanar Corp | 用於cmp之特製拋光墊及其製造方法及其用途 |
JP4897238B2 (ja) | 2005-05-17 | 2012-03-14 | 東洋ゴム工業株式会社 | 研磨パッド |
KR101134432B1 (ko) * | 2005-05-17 | 2012-04-10 | 도요 고무 고교 가부시키가이샤 | 연마 패드 |
US8052507B2 (en) * | 2007-11-20 | 2011-11-08 | Praxair Technology, Inc. | Damping polyurethane CMP pads with microfillers |
JP2009267367A (ja) | 2008-03-31 | 2009-11-12 | Toshiba Corp | 半導体装置の製造方法 |
US8821214B2 (en) | 2008-06-26 | 2014-09-02 | 3M Innovative Properties Company | Polishing pad with porous elements and method of making and using the same |
JP2010074119A (ja) | 2008-08-21 | 2010-04-02 | Ebara Corp | 化学機械研磨装置の化学機械研磨特性評価方法、材料表面の面内均一性評価方法、及びスラリー薬液の特性推定方法 |
JP5501722B2 (ja) | 2009-09-30 | 2014-05-28 | 富士紡ホールディングス株式会社 | 研磨パッドおよび研磨パッドの製造方法 |
JP2011199175A (ja) | 2010-03-23 | 2011-10-06 | Sumitomo Bakelite Co Ltd | 半導体装置の製造方法および半導体装置 |
US20140370788A1 (en) | 2013-06-13 | 2014-12-18 | Cabot Microelectronics Corporation | Low surface roughness polishing pad |
US20150375361A1 (en) | 2014-06-25 | 2015-12-31 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing method |
JP2016126954A (ja) | 2015-01-07 | 2016-07-11 | コニカミノルタ株式会社 | 導電性フィルム及び導電性フィルムの製造方法 |
KR101600393B1 (ko) * | 2015-05-20 | 2016-03-07 | 에프엔에스테크 주식회사 | 연마 패드 및 이의 제조 방법 |
-
2017
- 2017-05-29 KR KR1020170066076A patent/KR101835090B1/ko active IP Right Grant
-
2018
- 2018-05-08 TW TW107115591A patent/TWI728246B/zh active
- 2018-05-22 CN CN201810493335.XA patent/CN108673332B/zh active Active
- 2018-05-25 US US15/989,403 patent/US10518383B2/en active Active
- 2018-05-28 JP JP2018101665A patent/JP6636568B2/ja active Active
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20040021243A1 (en) * | 2002-08-02 | 2004-02-05 | Wen-Chang Shih | Method for manufacturing auxiliary gas-adding polyurethae/polyurethane-urea polishing pad |
CN101175603A (zh) * | 2005-05-18 | 2008-05-07 | 东洋橡胶工业株式会社 | 抛光垫、其生产方法及使用其生产半导体器件的方法 |
KR20140112577A (ko) * | 2010-10-15 | 2014-09-23 | 넥스플래너 코퍼레이션 | 다중 모드 분포의 기공 직경을 가지는 연마 패드 |
CN103252729A (zh) * | 2012-02-20 | 2013-08-21 | Kpx化工有限公司 | 抛光垫及其制造方法 |
CN103386648A (zh) * | 2012-05-11 | 2013-11-13 | 罗门哈斯电子材料Cmp控股股份有限公司 | 空心的聚合物-碱土金属氧化物复合体 |
CN104416452A (zh) * | 2013-08-30 | 2015-03-18 | 罗门哈斯电子材料Cmp控股股份有限公司 | 化学机械抛光垫 |
Cited By (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN112423935A (zh) * | 2018-06-29 | 2021-02-26 | 圣戈班磨料磨具有限公司 | 磨料制品及其形成方法 |
CN110003668A (zh) * | 2019-03-06 | 2019-07-12 | 中国科学院上海光学精密机械研究所 | 多微孔结构的沥青抛光盘及其制备方法 |
CN112571303A (zh) * | 2019-09-29 | 2021-03-30 | Skc株式会社 | 抛光垫、该抛光垫的制造方法及使用该抛光垫的抛光方法 |
CN112571303B (zh) * | 2019-09-29 | 2023-03-28 | Skc索密思株式会社 | 抛光垫、该抛光垫的制造方法及使用该抛光垫的抛光方法 |
CN114434318A (zh) * | 2020-11-06 | 2022-05-06 | Skc索密思株式会社 | 抛光垫及其制备方法以及使用其的半导体器件的制造方法 |
US11951591B2 (en) | 2020-11-06 | 2024-04-09 | Sk Enpulse Co., Ltd. | Polishing pad, method for producing the same and method of fabricating semiconductor device using the same |
CN114762953A (zh) * | 2020-12-30 | 2022-07-19 | Skc索密思株式会社 | 抛光垫、抛光垫的制备方法及半导体器件的制造方法 |
CN114762953B (zh) * | 2020-12-30 | 2023-12-29 | Sk恩普士有限公司 | 抛光垫、抛光垫的制备方法及半导体器件的制造方法 |
Also Published As
Publication number | Publication date |
---|---|
US20180339394A1 (en) | 2018-11-29 |
US10518383B2 (en) | 2019-12-31 |
KR101835090B1 (ko) | 2018-03-06 |
TW201900335A (zh) | 2019-01-01 |
TWI728246B (zh) | 2021-05-21 |
CN108673332B (zh) | 2021-04-27 |
JP6636568B2 (ja) | 2020-01-29 |
JP2019024078A (ja) | 2019-02-14 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN108673332A (zh) | 多孔聚氨酯抛光垫及通过采用该抛光垫制备半导体器件的方法 | |
CN108581822A (zh) | 多孔聚氨酯抛光垫及采用该抛光垫制备半导体器件的方法 | |
US11724356B2 (en) | Porous polyurethane polishing pad and preparation method thereof | |
US11325222B2 (en) | Porous polyurethane polishing pad and method for manufacturing same | |
US11772236B2 (en) | Porous polishing pad and process for producing the same all fees | |
US11766759B2 (en) | Porous polyurethane polishing pad and process for producing the same | |
JP7045334B2 (ja) | 多孔質ポリウレタン研磨パッドおよびその製造方法 | |
KR102088919B1 (ko) | 다공성 폴리우레탄 연마패드 및 이의 제조방법 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
TA01 | Transfer of patent application right | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20210331 Address after: 1043 Gyeonggi Avenue, pyongze, Gyeonggi do, Korea Applicant after: SKC SOLMICS Co.,Ltd. Address before: Chang'an Road 309 Pan Street 84, Chang'an District, Shuiyuan City, Gyeonggi Road, Korea Applicant before: SKC Co.,Ltd. |
|
GR01 | Patent grant | ||
GR01 | Patent grant | ||
CP01 | Change in the name or title of a patent holder | ||
CP01 | Change in the name or title of a patent holder |
Address after: 1043 Gyeonggi Avenue, pyongze, Gyeonggi do, Korea Patentee after: SK Enpus Co.,Ltd. Address before: 1043 Gyeonggi Avenue, pyongze, Gyeonggi do, Korea Patentee before: SKC SOLMICS Co.,Ltd. |