CN108666325B - 一种tft基板的制备方法、tft基板及显示装置 - Google Patents

一种tft基板的制备方法、tft基板及显示装置 Download PDF

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CN108666325B
CN108666325B CN201810509994.8A CN201810509994A CN108666325B CN 108666325 B CN108666325 B CN 108666325B CN 201810509994 A CN201810509994 A CN 201810509994A CN 108666325 B CN108666325 B CN 108666325B
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film layer
drain electrode
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hydrophobic insulating
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CN108666325A (zh
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宫奎
徐德智
田维
古宏刚
张玉虎
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BOE Technology Group Co Ltd
Hefei BOE Optoelectronics Technology Co Ltd
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Hefei BOE Optoelectronics Technology Co Ltd
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Abstract

本发明涉及显示技术领域，公开了一种TFT基板的制备方法、TFT基板及显示装置，该制备方法包括：在基底上形成金属导电膜层；在金属导电膜层上形成疏水绝缘膜层；在疏水绝缘膜层上涂覆光刻胶涂层，并采用曝光工艺对光刻胶涂层进行图案化处理以形成图案化的光刻胶层；对疏水绝缘膜层进行刻蚀以形成图案化的疏水绝缘层；采用铜刻蚀液对金属导电膜层进行刻蚀以形成图案化的金属电极层。上述制备方法中，在金属导电膜层上形成有疏水绝缘膜层，光刻胶涂层与疏水绝缘膜层之间黏附性较好，在后续金属导电膜层刻蚀时，避免了刻蚀液横向钻刻而造成光刻胶层脱落，进而有利于提高TFT基板的制备良率。

Description

一种TFT基板的制备方法、TFT基板及显示装置
技术领域
本发明涉及显示技术领域，特别涉及一种TFT基板的制备方法、TFT基板及显示装置。
背景技术
在现有平板显示器生产技术中，已经实现产业化的TFT主要有非晶硅TFT、多晶硅TFT以及单晶硅TFT等，一般用于制备平板显示器的阵列基板使用最多的是非晶硅TFT。不过，随着技术的发展，现在出现了金属氧化物TFT，金属氧化物TFT具有载流子迁移率高的优点，可以使TFT做的很小，使平板显示器的分辨率提高，显示效果更好，同时使用金属氧化物TFT还可以减少特性不均现象、节省材料和降低工艺成本、工艺温度低、透明率高等优点，因此，氧化物TFT的使用备受业界关注。
目前常用的金属氧化物一般为氧化铟稼锌(IGZO)，因为金属Al刻蚀液容易损伤IGZO，所以目前金属氧化物TFT一般搭配使用Cu电极，但是当Cu电极处于高温时，Cu离子会穿越栅极绝缘层扩散到半导体中，使得薄膜晶体管性能恶化。因此业内多采用Cu扩散阻止层(barrier)防止铜的扩散，即铜电极层一般为：扩散防止层、铜，或者，扩散防止层、铜、扩散防止层，或者，铜、扩散防止层的双层或三层结构，扩散防止层通常用金属层、金属氮化物层、金属合金等，例如Ti、Mo、MoN、MoNb等。此外，目前的Cu刻蚀液一般为双氧水系刻蚀液，相较于Al刻蚀液粘度大大降低，这样就会导致在刻蚀Cu电极层时，刻蚀液渗透进光刻胶与金属界面处造成光刻胶剥落现象，从而导致Cu电极发生open(断裂、损伤)不良，进而会降低TFT的制备良率。
其中，以MoNb、Cu、MoNb三层结构的铜电极为例，在使用光刻胶掩膜作为抗刻蚀层刻蚀制作铜电极图案的过程中，MoNb金属薄膜上的光刻胶掩膜图案在刻蚀过程中经常会发生脱落的现象，从而造成制作出来的电极图案发生脱落不良。研究表明，光刻胶与金属MoNb之间的黏附性问题除了受到分子键合的影响之外，还受到其他重要因素的影响，如表面的水份就是其中的重要因素，会减少黏附性，从而造成掀胶和侧向腐蚀。在实际应用中，经常会利用表面处理技术来增加金属MoNb表面的水分子接触角，降低金属MoNb表面的亲水性。然而，在实际应用中，表面处理技术的效果并不是十分显著，金属电极图案open的现象还是会时有发生。所以，对于上述在Cu电极层制备过程中的光刻胶脱落问题亟需解决。
发明内容
本发明提供了一种TFT基板的制备方法、TFT基板及显示装置，该制备方法中，在金属导电膜层上形成有疏水绝缘膜层，光刻胶涂层与疏水绝缘膜层之间黏附性较好，在后续金属导电膜层刻蚀时，避免了铜刻蚀液横向钻刻而造成光刻胶层脱落，进而有利于提高TFT基板的制备良率。
为达到上述目的，本发明提供以下技术方案：
一种TFT基板的制备方法，包括：
在基底上形成金属导电膜层；
在所述金属导电膜层上形成疏水绝缘膜层；
在所述疏水绝缘膜层上涂覆光刻胶涂层，并采用曝光工艺对所述光刻胶涂层进行图案化处理以形成图案化的光刻胶层；
对所述疏水绝缘膜层进行刻蚀以形成图案化的疏水绝缘层；
采用碱性刻蚀液对所述金属导电膜层进行刻蚀以形成图案化的金属电极层。
上述制备方法中，在基底上形成金属导线膜层之后，在金属导线膜层上形成一层疏水绝缘膜层，然后在疏水绝缘膜层上涂覆光刻胶涂层并对光刻胶涂层进行曝光处理形成图案化的光刻胶层，由于疏水绝缘膜层的疏水性较好，增加了疏水绝缘膜层与光刻胶层的黏附性，随后先以磷酸为刻蚀液对疏水绝缘膜层进行刻蚀形成图案化的疏水绝缘层，再接着以铜刻蚀液对金属导电膜层进行刻蚀并形成图案化的金属电极层，由于金属导电膜层上的疏水绝缘层与光刻胶层之间的黏附性较好，即疏水绝缘层与光刻胶层黏结比较牢固，在使用碱性刻蚀液对金属导电膜层进行刻蚀的过程中避免了碱性刻蚀液横向钻刻而造成光刻胶层发生脱落，有利于避免金属电极层造成断裂、损伤等不良，其中，上述制备方法可以用于制备包括金属氧化物TFT的TFT基板，金属氧化物TFT一般搭配使用铜电极，所以，在上述制备方法中，金属导电膜层可以是铜金属导电膜层，依据上述制备方法的步骤进行制备，此处不做赘述，其中，对铜金属导电膜层刻蚀时采用铜刻蚀液对铜金属导电膜层进行刻蚀，则，由于铜金属导电膜层上的疏水绝缘层与光刻胶层之间的黏附性较好，即疏水绝缘层与光刻胶层黏结比较牢固，在使用铜刻蚀液对金属导电膜层进行刻蚀的过程中避免了铜刻蚀液横向钻刻而造成光刻胶层发生脱落，有利于避免铜金属电极层造成断裂、损伤等不良，从而提高TFT基板的制备良率。
上述制备方法中，在金属导电膜层上形成有疏水绝缘膜层，光刻胶涂层与疏水绝缘膜层之间黏附性较好，在后续金属导电膜层刻蚀时，避免了碱性刻蚀液横向钻刻而造成光刻胶层脱落，进而有利于提高TFT基板的制备良率。
优选地，当所述金属电极层为源漏电极层时，具体包括：
在所述基底上形成源漏电极膜层；
在所述源漏电极膜层上形成所述疏水绝缘膜层；
在所述疏水绝缘膜层上涂覆光刻胶涂层，并采用半曝光工艺对所述光刻胶涂层进行曝光显影处理以形成图案化的光刻胶层，其中，对所述光刻胶涂层进行曝光显影处理时，对所述光刻胶涂层中与需要形成所述源漏电极层相对的部位进行全部保留，对所述光刻胶涂层中与所述源漏电极层和像素电极的搭接区域相对的部位进行部分去除，并且对所述光刻胶涂层中的其余部位进行全部去除；
对所述疏水绝缘膜层进行刻蚀以去除所述疏水绝缘膜层中需要与所述源漏电极层相对之外的其他部分并形成疏水绝缘层；
采用铜刻蚀液对所述源漏电极膜层进行刻蚀以形成图案化的所述源漏电极层；
对所述光刻胶层进行灰化处理以使所述光刻胶层中与所述源漏电极层和像素电极的搭接区域相对的部位全部去除、且所述光刻胶层中其余部位部分去除；
对所述疏水绝缘层进行刻蚀以形成用于所述源漏电极层与像素电极连接的第一过孔。
优选地，所述金属导电膜层包括依次层叠设置在所述基底上的第一扩散防止膜层、铜膜层、第二扩散防止膜层，且所述第二扩散防止膜层位于所述铜膜层朝向所述疏水绝缘膜层的一侧。
优选地，所述第一扩散防止膜层为金属膜层、金属氮化物膜层或金属合金膜层；
和/或，所述第二扩散防止膜层为金属膜层、金属氮化物膜层或金属合金膜层。
优选地，所述疏水绝缘膜层为氮化硅膜层。
优选地，在所述源漏电极膜层形成之前，还包括：
在所述基底上形成图案化的栅极层；
在所述栅极层上形成栅绝缘层；
在所述栅绝缘层上形成图案化的有源层。
优选地，在所述源漏电极层形成之后，还包括：
在所述源漏电极层上形成图案化的有源层；
在有源层上形成栅绝缘层；
在所述栅绝缘层上形成图案化的栅极层。
本发明还提供了一种采用如上述技术方案中提供的任意一种制备方法制备的TFT基板，包括：
形成于基底上的金属电极层；
形成于所述金属电极层上的疏水绝缘层。
优选地，当所述金属电极层为源漏电极层时，包括：
形成于所述基底上的源漏电极层；
形成于所述源漏电极层上的疏水绝缘层，其中，所述疏水绝缘层设有用于所述源漏电极层与像素电极连接的通孔。
本发明还提供了一种显示装置，包括上述技术方案中提供的任意一种TFT基板。
附图说明
图1为本发明实施例提供的一种TFT基板的制备方法的流程示意图；
图2为本发明实施例提供的当金属电极层作为源漏电极层时一种TFT基板的制备方法流程示意图；
图3-图10为本发明实施例提供的当金属电极层作为源漏电极层时的TFT基板的制备过程中膜层结构变化示意图；
图标：1-基底；2-源漏电极膜层；3-疏水绝缘膜层；4-光刻胶层；5-栅极层；
6-栅绝缘层；7-有源层；8-功能膜层；9-像素电极；21-源漏电极层；
31-疏水绝缘层；81-第二过孔；211-第一扩散防止膜层；212-铜膜层；
213-第二扩散防止膜层；311-第一过孔。
具体实施方式
下面将结合本发明实施例中的附图，对本发明实施例中的技术方案进行清楚、完整地描述，显然，所描述的实施例仅仅是本发明一部分实施例，而不是全部的实施例。基于本发明中的实施例，本领域普通技术人员在没有做出创造性劳动前提下所获得的所有其他实施例，都属于本发明保护的范围。
请参考图1，本发明实施例提供的一种TFT基板的制备方法，包括：
步骤S101、在基底1上形成金属导电膜层；
步骤S102、在金属导电膜层上形成疏水绝缘膜层3；
步骤S103、在疏水绝缘膜层3上涂覆光刻胶涂层，并采用曝光工艺对光刻胶涂层进行图案化处理以形成图案化的光刻胶层4；
步骤S104、对疏水绝缘膜层3进行刻蚀以形成图案化的疏水绝缘层31；
步骤S105、采用碱性刻蚀液对金属导电膜层进行刻蚀以形成图案化的金属电极层。
上述制备方法中，根据步骤S101在基底1上形成金属导电膜层之后，根据步骤S102在金属导电膜层上形成一层疏水绝缘膜层3，然后根据步骤S103在疏水绝缘膜层3上涂覆光刻胶膜层并对光刻胶涂层进行曝光处理形成图案化的光刻胶层4，由于疏水绝缘膜层3的疏水性较好，增加了疏水绝缘膜层3与光刻胶层4的黏附性，随后根据步骤S104先以磷酸为刻蚀液对疏水绝缘膜层3进行刻蚀形成图案化的疏水绝缘层31，再接着根据步骤S105以铜刻蚀液对金属导电膜层进行刻蚀并形成图案化的金属电极层，由于金属导电膜层上的疏水绝缘层31与光刻胶层4之间的黏附性较好，即疏水绝缘层31与光刻胶层4黏结比较牢固，在使用铜刻蚀液对金属导电膜层进行刻蚀的过程中避免了铜刻蚀液横向钻刻而造成光刻胶层4发生脱落，有利于避免金属电极层造成断裂、损伤等不良，其中，上述制备方法可以用于制备包括金属氧化物TFT的TFT基板，金属氧化物TFT一般搭配使用铜电极，所以，在上述制备方法中，金属导电膜层可以是铜金属导电膜层，依据上述制备方法的步骤(此处不做赘述)进行制备形成铜金属电极层，其中，对铜金属导电膜层刻蚀时采用铜刻蚀液对铜金属导电膜层进行刻蚀，则，由于铜金属导电膜层上的疏水绝缘层3与光刻胶层4之间的黏附性较好，即疏水绝缘层3与光刻胶层4黏结比较牢固，在使用铜刻蚀液对金属导电膜层进行刻蚀的过程中避免了铜刻蚀液横向钻刻而造成光刻胶层发生脱落，有利于避免铜金属电极层造成断裂、损伤等不良，从而提高TFT基板的制备良率。。
上述制备方法中，在金属导电膜层上形成有疏水绝缘膜层3，光刻胶涂层与疏水绝缘膜层3之间黏附性较好，在后续金属导电膜层刻蚀时，避免了铜刻蚀液横向钻刻而造成光刻胶层4脱落，进而有利于提高TFT基板的制备良率。
具体地，采用磷酸对疏水绝缘膜层3进行刻蚀，由于磷酸酸性比较小，不会对其它膜层造成损伤，或造成的影响很小，几乎不会影响。
具体地，当金属电极层为源漏电极层21时，如图2所示，具体制备步骤包括：
步骤S201、参考图4，在基底1上形成源漏电极膜层2；
步骤S202、继续参考图4，在源漏电极膜层2上形成疏水绝缘膜层3；
步骤S203、参考图5，在疏水绝缘膜层3上涂覆光刻胶涂层，并采用半曝光工艺对光刻胶涂层进行曝光显影处理以形成图案化的光刻胶层4，其中，对光刻胶涂层进行曝光显影处理时，对光刻胶涂层中与需要形成源漏电极层21相对的部位进行全部保留，对光刻胶涂层中与源漏电极层21和像素电极的搭接区域相对的部位进行部分去除，并且对光刻胶涂层中的其余部位进行全部去除；
步骤S204、参考图6，采用磷酸对疏水绝缘膜层3进行刻蚀以去除疏水绝缘膜层3中需要与源漏电极层21相对之外的其他部分并形成疏水绝缘层31；
步骤S205、参考图7，采用铜刻蚀液对源漏电极膜层2进行刻蚀以形成图案化的源漏电极层21；
步骤S206、参考图8，对光刻胶层4进行灰化处理以使光刻胶层4中与源漏电极层21和像素电极9的搭接区域相对的部位全部去除、且光刻胶层4中其余部位部分去除；
步骤S207、参考图9，采用磷酸对疏水绝缘层31进行刻蚀以形成用于源漏电极层21与像素电极连接的第一过孔311。
上述源漏电极层21的制备方法中，在源漏电极膜层2上形成疏水绝缘膜层3，疏水绝缘膜层3和光刻胶涂层之间有较好的黏附性，即，形成的光刻胶层4与疏水绝缘层31之间黏附性较好，粘接比较牢固，可以在后续使用铜刻蚀液对源漏电极膜层2进行刻蚀时，避免铜刻蚀液横向钻刻而造成光刻胶层4脱落，避免了源漏电极层21造成断裂、损伤不良，提高了源漏电极层21的制作良率，从而有利于提高TFT基板的制备良率。
上述制备方法中，金属导电膜层包括依次层叠设置在基底1上的第一扩散防止膜层211、铜膜层212、第二扩散防止膜层213，且第二扩散防止膜层213位于铜膜层212朝向疏水绝缘膜层3的一侧。在铜膜层212的两侧分别设置第一扩散防止膜层211和第二扩散防止膜层213形成三层膜层结构构成金属导电膜层，当铜膜层212在处于高温时，第一扩散防止膜层211和第二扩散防止膜层213可以阻止铜膜层212中的铜离子扩散到其他膜层中对其他膜层造成不良影响，保证其他膜层的性能。
上述金属导电膜层中，第一扩散防止膜层211为金属膜层、金属氮化物膜层或金属合金膜层；和/或，第二扩散防止膜层213为金属膜层、金属氮化物膜层或金属合金膜层。
具体地，金属膜层可以为Ti膜层、Mo膜层，金属氮化物膜层可以为MoN，金属合金膜层可以为MoNb膜层，需要说明的是，金属膜层也可以是其他金属膜层，金属碳化物也可以是其他金属碳化物膜层，金属合金膜层也可以是其他金属合金膜层，本实施例不做局限。
具体地，疏水绝缘膜层3为氮化硅膜层，氮化硅膜层质硬耐磨、疏水性较好，针孔密度小，气体和水汽很难穿透，因此与光刻胶涂层之间黏附性较好，更有利于增强与光刻胶涂层粘接的牢固性，有利于在刻蚀过程中形成良好的金属电极层。
具体地，本实施例提供的制备方法可以是制备底栅型TFT也可以是顶栅型TFT，选择方式如下：
方式一：
参考图3和图4，当制备的是底栅型TFT时，则在源漏电极膜层2形成之前，还包括：在基底1上形成图案化的栅极层5；在栅极层5上形成栅绝缘层6；在栅绝缘层6上形成图案化的有源层7。
具体地，上述制备方法中，参考图10，在源漏电极层21形成之后，还包括：在源漏电极层21上形成多个功能膜层8，多个功能膜层8中设有与第一过孔311对应且贯穿多个功能膜层8的第二过孔81，在多个功能膜层8上形成像素电极9，且像素电极9通过第二过孔81与源漏电极层21连接。
方式二：
当制备的是顶栅型TFT时，在源漏电极层21形成之后，还包括：在源漏电极层21上形成图案化的有源层7；在有源层7上形成栅绝缘层6；在栅绝缘层6上形成图案化的栅极层5。
上述实施例提供的制备方法中，栅极层5可以是铜膜层和第三扩散阻止层的双层结构膜层，也可以是铝膜层和第三扩散阻止层的双层结构膜层，本实施例不做局限。
其中，第三扩散阻止层可以是金属膜层、金属氧化物膜层，或金属合金膜层，且金属膜层可以为Ti膜层、Mo膜层，金属氮化物膜层可以为MoN，金属合金膜层可以为MoNb膜层，需要说明的是，金属膜层也可以是其他金属膜层，金属碳化物也可以是其他金属碳化物膜层，金属合金膜层也可以是其他金属合金膜层，本实施例不做局限。
具体地，上述制备方法中，栅绝缘层6的材料可以为氮化硅或二氧化硅。
本发明实施例还提供了一种采用如上述实施例中提供的任意一种制备方法制备的TFT基板，包括：形成于基底1上的金属电极层；形成于金属电极层上的疏水绝缘层31。
上述TFT基板中，在金属电极层上形成有疏水绝缘膜层31，在制备过程中光刻胶涂层与疏水绝缘膜层之间黏附性较好，在后续金属导电膜层刻蚀时，可以避免刻蚀液横向钻刻而造成光刻胶层脱落，进而有利于提高TFT基板的制备良率，其中，上述TFT基板可以包括金属氧化物TFT，金属氧化物TFT通常搭配使用铜电极，所以，上述金属电极层为铜金属电极层，则，在上述TFT基板制备过程中，铜金属导电膜层上设置有疏水性较好的疏水绝缘层，疏水绝缘层与光刻胶对的黏附性较好，粘接比较牢固，所以，可以在使用铜刻蚀液对铜金属导电膜层进行刻蚀时避免铜刻蚀液横向钻刻，避免形成的铜金属电极层有损伤或有断裂不良。
具体地，当金属电极层为源漏电极层21时，本实施例提供的TFT基板包括：形成于基底1上的源漏电极层21；形成于源漏电极层21上的疏水绝缘层31，其中，疏水绝缘层31设有用于源漏电极层21与像素电极9连接的通孔。
具体地，上述TFT基板还包括形成于源漏电极层21上的多个功能膜层8；多个功能膜层8中设有与第一过孔311对应且贯穿多个功能膜层8的第二过孔81；形成于多个功能膜层8上的像素电极9，且像素电极9通过第二过孔81与源漏电极层21连接。
本发明实施例还提供了一种显示装置，包括上述实施例中提供的任意一种TFT基板。
显然，本领域的技术人员可以对本发明实施例进行各种改动和变型而不脱离本发明的精神和范围。这样，倘若本发明的这些修改和变型属于本发明权利要求及其等同技术的范围之内，则本发明也意图包含这些改动和变型在内。

Claims (8)

1.一种TFT基板的制备方法，其特征在于，包括：
在基底上形成金属导电膜层；
在所述金属导电膜层上形成疏水绝缘膜层；
在所述疏水绝缘膜层上涂覆光刻胶涂层，并采用曝光工艺对所述光刻胶涂层进行图案化处理以形成图案化的光刻胶层；
对所述疏水绝缘膜层进行刻蚀以形成图案化的疏水绝缘层；
采用碱性刻蚀液对所述金属导电膜层进行刻蚀以形成图案化的金属电极层；
当所述金属电极层为源漏电极层时，具体包括：
在所述基底上形成源漏电极膜层；
在所述源漏电极膜层上形成所述疏水绝缘膜层；
在所述疏水绝缘膜层上涂覆光刻胶涂层，并采用半曝光工艺对所述光刻胶涂层进行曝光显影处理以形成图案化的光刻胶层，其中，对所述光刻胶涂层进行曝光显影处理时，对所述光刻胶涂层中与需要形成所述源漏电极层相对的部位进行全部保留，对所述光刻胶涂层中与所述源漏电极层和像素电极的搭接区域相对的部位进行部分去除，并且对所述光刻胶涂层中的其余部位进行全部去除；
对所述疏水绝缘膜层进行刻蚀以去除所述疏水绝缘膜层中需要与所述源漏电极层相对之外的其他部分并形成疏水绝缘层；
采用碱性刻蚀液对所述源漏电极膜层进行刻蚀以形成图案化的所述源漏电极层；
对所述光刻胶层进行灰化处理以使所述光刻胶层中与所述源漏电极层和像素电极的搭接区域相对的部位全部去除、且所述光刻胶层中其余部位部分去除；
对所述疏水绝缘层进行刻蚀以形成用于所述源漏电极层与像素电极连接的第一过孔。
2.根据权利要求1所述的制备方法，其特征在于，所述金属导电膜层包括依次层叠设置在所述基底上的第一扩散防止膜层、铜膜层、第二扩散防止膜层，且所述第二扩散防止膜层位于所述铜膜层朝向所述疏水绝缘膜层的一侧。
3.根据权利要求2所述的制备方法，其特征在于，所述第一扩散防止膜层为金属膜层、金属氮化物膜层或金属合金膜层；
和/或，所述第二扩散防止膜层为金属膜层、金属氮化物膜层或金属合金膜层。
4.根据权利要求1所述的制备方法，其特征在于，所述疏水绝缘膜层为氮化硅膜层。
5.根据权利要求1所述的制备方法，其特征在于，在所述源漏电极膜层形成之前，还包括：
在所述基底上形成图案化的栅极层；
在所述栅极层上形成栅绝缘层；
在所述栅绝缘层上形成图案化的有源层。
6.根据权利要求1所述的制备方法，其特征在于，在所述源漏电极层形成之后，还包括：
在所述源漏电极层上形成图案化的有源层；
在有源层上形成栅绝缘层；
在所述栅绝缘层上形成图案化的栅极层。
7.一种采用如权利要求1-6任一项所述的制备方法制备的TFT基板，其特征在于，包括：
形成于基底上的金属电极层；
形成于所述金属电极层上的疏水绝缘层；
当所述金属电极层为源漏电极层时，包括：
形成于所述基底上的源漏电极层；
形成于所述源漏电极层上的疏水绝缘层，其中，所述疏水绝缘层设有用于所述源漏电极层与像素电极连接的通孔。
8.一种显示装置，其特征在于，包括如权利要求7所述的TFT基板。
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