CN111599751B - Ltps tft基板的制造方法及ltps tft基板 - Google Patents
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Abstract
本申请实施例提供一种LTPS TFT基板的制造方法及LTPS TFT基板,本申请中采用酸性试剂刻蚀所述栅极金属层的表面,形成凹凸不平的表面,在该凹凸不平的表面上涂布光阻图案,增加光阻图案与栅极金属层的附着力,采用酸性试剂刻蚀有光阻图案的栅极金属层的两侧,刻蚀出准栅极,然后用风刀干燥准栅极和光阻图案,光阻图案不会被吹掉,以准栅极为遮蔽层,对多晶硅有源层两端没有被准栅极遮盖的部分进行N型离子重掺杂,由于存在光阻图案的保护,等离子体掺杂过程不会刻蚀掉栅极图案,既能节约一道光罩成本,又能保护栅极的完整性,从而提升LTPS TFT基板制程良率。
Description
技术领域
本申请涉及显示技术领域,尤其涉及一种LTPS TFT基板的制造方法及LTPS TFT基板。
背景技术
薄膜晶体管(Thin Film Transistor,TFT)阵列(Array)基板是目前LCD装置和AMOLED装置中的主要组成部件,直接关系到高性能平板显示装置的发展方向,用于向显示器提供驱动电路,通常设置有数条栅极扫描线和数条数据线,该数条栅极扫描线和数条数据线限定出多个像素单元,每个像素单元内设置有薄膜晶体管和像素电极,薄膜晶体管的栅极与相应的栅极扫描线相连,当栅极扫描线上的电压达到开启电压时,薄膜晶体管的源极和漏极导通,从而将数据线上的数据电压输入至像素电极,进而控制相应像素区域的显示。通常阵列基板上薄膜晶体管包括层叠设置于衬底基板上的栅极、栅极绝缘层、有源层、源漏极、及绝缘保护层。其中,低温多晶硅(Low Temperature Poly-Silicon,LTPS)薄膜晶体管与传统非晶硅(A-Si)薄膜晶体管相比,虽然制作工艺复杂,但因其具有更高的载流子迁移率,被广泛用于中小尺寸高分辨率的LCD和AMOLED显示面板的制作,低温多晶硅被视为实现低成本全彩平板显示的重要材料。
目前NP MASK技术制作LTPS阵列基板的有源层时,多晶硅有源层中重掺杂区需要一次光罩,多晶硅有源层中轻掺杂区还需要一次光罩,总共需要两次光罩,Re-etch MASK技术与上述NP MASK技术相比,在图案化形成多晶硅有源层后,不通过光阻图案对有源层进行重掺杂,而是对栅极金属层进行两次蚀刻,以第一次蚀刻后的栅极金属图案来定义重掺杂的源/漏极接触区域,以第一次蚀刻后的栅极金属图案为遮蔽层,向多晶硅有源层两端进行重掺杂而植入高剂量的N型离子或磷离子P+,接着对第一次蚀刻后的栅极金属图案进行第二次蚀刻得到栅极,以栅极为遮蔽层,向多晶硅有源层两端植入进行轻掺杂而植入低剂量的N型离子或磷离子P+,以形成沟道区和源/漏极接触区之间的轻掺杂区。Re-etch MASK技术的主要优点为减少一道光刻制程,从而降低一道光罩的生产成本和减少LTPS TFT基板的制程时间,提高生产产能。
现有技术中Re-etch MASK技术中,第一次蚀刻后,来充当NP MASK进行离子植入,然而在第一次蚀刻后的栅极金属图案后,由于湿发蚀刻中硝酸和磷酸混合溶液只能蚀刻栅极金属膜层,对光阻层却是无影响,故第一次蚀刻后的栅极金属后,有一部分光阻层悬空,在湿蚀刻机台清洗蚀刻液体的时候,在过机台干燥时候,风刀在吹干基板表面的液体残留时候,一部分悬空光阻层,容易被风刀掀起,甚至被吹掉断裂,造成光阻层缺失,第二次蚀刻后的栅极金属图案无光阻层保护,裸露在外栅极金属图案也被蚀刻吃掉,形成水平断线结构,该处栅级无法传递驱动电路中扫描信号,对应的区域显示为黑色,影响了LTPS TFT基板正常工作,降低LTPS TFT基板色的生产良率的技术问题,需要改进。
发明内容
本申请实施例提供一种LTPS TFT基板的制造方法及LTPS TFT基板,能够解决Re-etch MASK技术中第一次蚀刻后,来充当NP MASK进行离子植入,然而在第一次蚀刻后的栅极金属图案后,由于湿发蚀刻中硝酸和磷酸混合溶液只能蚀刻栅极金属膜层,对光阻层却是无影响,故第一次蚀刻后的栅极金属后,有一部分光阻层悬空,在湿蚀刻机台清洗蚀刻液体的时候,在过机台干燥时候,风刀在吹干基板表面的液体残留时候,一部分悬空光阻层,容易被风刀掀起,甚至被吹掉断裂,造成光阻层缺失,第二次蚀刻后的栅极金属图案无光阻层保护,裸露在外栅极金属图案也被蚀刻吃掉,形成水平断线结构,该处栅级无法传递驱动电路中扫描信号,对应的区域显示为黑色,影响了LTPS TFT基板正常工作,降低LTPS TFT基板色的生产良率的技术问题。
为解决上述问题,本发明提供的技术方案如下:
本申请实施例提供一种LTPS TFT基板的制造方法,包括:
步骤S1、提供衬底基板,在所述衬底基板上形成缓冲层,在所述缓冲层上形成多晶硅有源层,在所述缓冲层上形成覆盖多晶硅有源层的栅极绝缘层,在所述栅极绝缘层上形成栅极金属层;
步骤S2、采用酸性试剂刻蚀所述栅极金属层的表面,形成凹凸不平的表面,在该凹凸不平的表面上涂布光阻图案,采用酸性试剂刻蚀有光阻图案的栅极金属层的两侧,刻蚀出准栅极,然后用风刀干燥所述准栅极和所述光阻图案,以所述准栅极为遮蔽层,对所述多晶硅有源层两端没有被所述准栅极遮盖的部分进行N型离子重掺杂,形成多晶硅有源层两端的源/漏极接触区;
步骤S3、采用光罩对所述准栅极进行干刻,使所述准栅极两侧被横向蚀刻而宽度减小,形成栅极,以所述栅极为遮蔽层,对所述多晶硅有源层两端没有被栅极遮盖的部分进行N型离子轻掺杂,得到多晶硅有源层中部的对应位于所述栅极下方的沟道区以及所述源/漏极接触区和沟道区之间的轻掺杂区,剥离去除所述光阻图案。
在本申请的LTPS TFT基板的制造方法中,所述步骤S2中所述酸性试剂为硝酸和磷酸混合溶液。
在本申请的LTPS TFT基板的制造方法中,所述步骤S2中,凹凸不平的表面为波浪形或锯齿形。
在本申请的LTPS TFT基板的制造方法中,所述步骤S2中,对所述多晶硅有源层进行离子重掺杂时的掺杂离子浓度为1x1014ions/cm2。
在本申请的LTPS TFT基板的制造方法中,所述步骤S3中,对所述多晶硅有源层进行离子轻掺杂时的掺杂离子浓度为1x1012至1x1013ions/cm2范围内。
在本申请的LTPS TFT基板的制造方法中,所述多晶硅有源层的材料为金属氧化物,其中,所述源极接触区和所述漏极接触区均为导电性金属氧化物,所述沟道区为保持半导体特性的金属氧化物。
在本申请的LTPS TFT基板的制造方法中,还包括:
步骤S4、在所述栅极绝缘层上形成覆盖所述栅极的层间绝缘层,在所述层间绝缘层形成源极和漏极,在所述层间绝缘层上形成钝化层,在所述钝化层形成像素电极,其中,所述源极与所述源极接触区电性连接,所述漏极与所述漏极接触区电性连接,所述像素电极通过像素过孔与所述漏极电性连接。
依据上述LTPS TFT基板的制造方法中,本申请还提供一种LTPS TFT基板,包括衬底基板、设于衬底基板上的缓冲层、设于缓冲层上的多晶硅有源层、设于所述多晶硅有源层上的栅极绝缘层、设于所述栅极绝缘层上的栅极、在所述栅极绝缘层上覆盖所述栅极的层间绝缘层及设于所述层间绝缘层上的源/漏极;所述多晶硅有源层具有位于两端的源/漏极接触区、位于中间的沟道区及位于源/漏极接触区与沟道区之间的轻掺杂区;所述栅极远离所述多晶硅有源层的一侧设置有凹凸不平的表面。
在本申请的LTPS TFT基板中,所述源/漏极接触区的掺杂N离子浓度为1x1014ions/cm2,所述轻掺杂区的掺杂N离子浓度为1x1012至1x1013ions/cm2范围内。
有益效果:本申请实施例提供一种LTPS TFT基板的制造方法及LTPS TFT基板,本申请中采用酸性试剂刻蚀所述栅极金属层的表面,形成凹凸不平的表面,在该凹凸不平的表面上涂布光阻图案,增加光阻图案与栅极金属层的附着力,采用酸性试剂刻蚀有光阻图案的栅极金属层的两侧,刻蚀出准栅极,然后用风刀干燥准栅极和光阻图案,光阻图案不会被吹掉,以准栅极为遮蔽层,对多晶硅有源层两端没有被准栅极遮盖的部分进行N型离子重掺杂,由于存在光阻图案的保护,等离子体掺杂过程不会刻蚀掉栅极图案,既能节约一道光罩成本,又能保护栅极的完整性,从而提升LTPS TFT基板制程良率。
附图说明
为了更清楚地说明实施例或现有技术中的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作简单介绍,显而易见地,下面描述中的附图仅仅是发明的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动的前提下,还可以根据这些附图获得其他的附图。
图1为本申请实施例提供一种LTPS TFT基板的制造方法流程示意图。
图2至图11为本申请实施例提供一种LTPS TFT基板的制造的工艺结构示意图。
具体实施方式
下面将结合本申请实施例中的附图,对本申请实施例中的技术方案进行清楚、完整地描述。显然,所描述的实施例仅仅是本申请一部分实施例,而不是全部的实施例。基于本申请中的实施例,本领域技术人员在没有作出创造性劳动前提下所获得的所有其他实施例,都属于本申请保护的范围。
在本申请的描述中,需要理解的是,术语“中心”、“纵向”、“横向”、“长度”、“宽度”、“厚度”、“上”、“下”、“前”、“后”、“左”、“右”、“竖直”、“水平”、“顶”、“底”、“内”、“外”、“顺时针”、“逆时针”等指示的方位或位置关系为基于附图所示的方位或位置关系,仅是为了便于描述本申请和简化描述,而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作,因此不能理解为对本申请的限制。此外,术语“第一”、“第二”仅用于描述目的,而不能理解为指示或暗示相对重要性或者隐含指明所指示的技术特征的数量。由此,限定有“第一”、“第二”的特征可以明示或者隐含地包括一个或者更多个特征。在本申请的描述中,“多个”的含义是两个或两个以上,除非另有明确具体的限定。
在本申请的描述中,需要说明的是,除非另有明确的规定和限定,术语“安装”、“相连”、“连接”应做广义理解,例如,可以是固定连接,也可以是可拆卸连接,或一体地连接;可以是机械连接,也可以是电连接或可以相互通讯;可以是直接相连,也可以通过中间媒介间接相连,可以是两个元件内部的连通或两个元件的相互作用关系。对于本领域的普通技术人员而言,可以根据具体情况理解上述术语在本申请中的具体含义。
在本申请中,除非另有明确的规定和限定,第一特征在第二特征之“上”或之“下”可以包括第一和第二特征直接接触,也可以包括第一和第二特征不是直接接触而是通过它们之间的另外的特征接触。而且,第一特征在第二特征“之上”、“上方”和“上面”包括第一特征在第二特征正上方和斜上方,或仅仅表示第一特征水平高度高于第二特征。第一特征在第二特征“之下”、“下方”和“下面”包括第一特征在第二特征正下方和斜下方,或仅仅表示第一特征水平高度小于第二特征。
下文的公开提供了许多不同的实施方式或例子用来实现本申请的不同结构。为了简化本申请的公开,下文中对特定例子的部件和设置进行描述。当然,它们仅仅为示例,并且目的不在于限制本申请。此外,本申请可以在不同例子中重复参考数字和/或参考字母,这种重复是为了简化和清楚的目的,其本身不指示所讨论各种实施方式和/或设置之间的关系。此外,本申请提供了的各种特定的工艺和材料的例子,但是本领域普通技术人员可以意识到其他工艺的应用和/或其他材料的使用。
本申请针对Re-etch MASK技术中第一次蚀刻后,来充当NP MASK进行离子植入,然而在第一次蚀刻后的栅极金属图案后,由于湿发蚀刻中硝酸和磷酸混合溶液只能蚀刻栅极金属膜层,对光阻层却是无影响,故第一次蚀刻后的栅极金属后,有一部分光阻层悬空,在湿蚀刻机台清洗蚀刻液体的时候,在过机台干燥时候,风刀在吹干基板表面的液体残留时候,一部分悬空光阻层,容易被风刀掀起,甚至被吹掉断裂,造成光阻层缺失,第二次蚀刻后的栅极金属图案无光阻层保护,裸露在外栅极金属图案也被蚀刻吃掉,形成水平断线结构,该处栅级无法传递驱动电路中扫描信号,对应的区域显示为黑色,影响了LTPS TFT基板正常工作,降低LTPS TFT基板色的生产良率的技术问题,本申请中实施例能够解决该缺陷。
如图1所示,本申请实施例提供一种LTPS TFT基板的制造方法流程示意图,该LTPSTFT基板的制造方法包括:
步骤S1、提供衬底基板,在所述衬底基板上形成缓冲层,在所述缓冲层上形成多晶硅有源层,在所述缓冲层上形成覆盖所述多晶硅有源层的栅极绝缘层,在所述栅极绝缘层上形成栅极金属层。
步骤S2、采用酸性试剂刻蚀所述栅极金属层的表面,形成凹凸不平的表面,在该凹凸不平的表面上涂布光阻图案,采用酸性试剂刻蚀有光阻图案的栅极金属层的两侧,刻蚀出准栅极,然后用风刀干燥所述准栅极和所述光阻图案,以所述准栅极为遮蔽层,对所述多晶硅有源层两端没有被所述准栅极遮盖的部分进行N型离子重掺杂,形成多晶硅有源层两端的源/漏极接触区。
步骤S3、采用等离子体对所述准栅极进行干刻,使所述准栅极两侧被横向蚀刻而宽度减小,形成栅极,以所述栅极为遮蔽层,对所述多晶硅有源层两端没有被栅极遮盖的部分进行N型离子轻掺杂,得到多晶硅有源层中部的对应位于所述栅极下方的沟道区以及所述源漏极接触区和沟道区之间的轻掺杂区,剥离去除所述光阻图案。
具体地,如图2所示,衬底基板101通常为玻璃基板,也可为其他材质的基板,在此不做限制,使用纯水或热硫酸等清洗液将衬底基板101洗净后,在衬底基板101上形成缓冲层102,缓冲层102的厚度范围优选为50至100纳米,缓冲层102为氧化硅(SiOx)薄膜、氮化硅(SiNx)薄膜、或者氧化硅薄膜与氮化硅薄膜交替层叠设置形成的复合薄膜。
在缓冲层102上形成多晶硅有源层103,多晶硅有源层103的材料为铟镓锌氧化物IGZO、铟锌锡氧化物IZTO、以及铟镓锌锡氧化物IGZTO中的一种或多种;多晶硅有源层103的厚度为5~500纳米,是通过磁控溅镀法、金属有机化学气相沉积法或脉冲雷射蒸镀法中一种方法沉积在缓冲层102上,多晶硅有源层103沉积完成后,再进行退火处理,可以在400℃干燥空气氛围下退火处理约0.5小时,退火处理完成后,采用草酸作为刻蚀液的湿法蚀刻工艺或干法刻蚀工艺对多晶硅有源层103进行刻蚀,经过蚀刻制程后,多晶硅有源层103的整层金属氧化物薄膜将图案化,形成岛状。
通过化学气相沉积法,在多晶硅有源层103上形成栅绝缘层104,经物理气相沉积方法,在栅绝缘层104上形成栅极金属层105。栅绝缘层104是通过化学气相沉积法形成于多晶硅有源层103上,然后在400℃干燥空气氛围下退火处理得到。栅绝缘层104的材料一般为氧化硅(SiOx)、氮化硅(SiNx)、氮氧化硅(SiON)、或者三者的夹层结构等。栅极金属层105的材料为金属材料,例如是铜(Cu)、铝(Al)、钛(Ti)、钽(Ta)、钨(W)、钼(Mo)、铬(Cr)等。栅极金属层105经物理气相沉积方法形成于栅绝缘层104上。
如图3和图4所示,采用酸性试剂1051刻蚀栅极金属层105的表面,形成凹凸不平的表面,凹凸不平的表面为波浪形或锯齿形,凹凸不平的表面的深度为在该凹凸不平的表面上涂布光阻图案1052,光阻图案1052朝向栅极金属层105一侧嵌设于凹凸不平的表面上。如图5、图6和图7所示,采用酸性试剂1053刻蚀有光阻图案的栅极金属层105的两侧,刻蚀出准栅极105,然后用风刀干燥准栅极105和光阻图案1052,以准栅极105为遮蔽层,对多晶硅有源层103两端没有被准栅极105遮盖的部分进行N型离子重掺杂,形成多晶硅有源层103两端的源极接触区1031和漏极接触区1032。本实施例中酸性试剂1051和酸性试剂1053均优选为硝酸和磷酸混合溶液,由于硝酸和磷酸混合溶液仅仅会刻蚀栅极金属层105,不会刻蚀光阻图案1052,采用酸性试剂刻蚀有光阻图案的栅极金属层105的两侧,光阻图案1052有一部分悬空,光阻图案1052与栅极金属层105采用凹凸不平面接触增加了附着力,在后续采用风刀干燥过程中,悬空的光阻图案1052不会脱落,很好地保护后续采用等离子体进行掺杂,避免对栅极金属图案破坏。
如图8、图9和图10所示,通过一道光罩对光阻图案1052进行图形化处理,保留下来的光阻图案1052在准栅极105上定义出栅极105图案,然后采用光罩对准栅极105进行干刻,使准栅极105两侧被横向蚀刻而宽度减小,形成栅极105,以栅极105为遮蔽层,对多晶硅有源层两端没有被栅极遮盖的部分进行N型离子轻掺杂,得到多晶硅有源层中部的对应位于栅极下方的沟道区1035、源极接触区1031和沟道区1035之间的轻掺杂区1033、以及漏极接触区1032和沟道区1035之间的轻掺杂区1034,通过等离子体掺杂后,源极接触区1031和漏极接触区1032均为导电性金属氧化物,沟道区1035为保持半导体特性的金属氧化物,最后剥离去除光阻图案1052。
如图11所示,在栅绝缘层104上制备层间绝缘层106,在层间绝缘层106上制备源极1071和漏极1072,在层间绝缘层106上制备钝化层108,在钝化层108制备像素电极层109,其中,像素电极层109通过钝化层108上的过孔与漏极1072相连。
依据上述LTPS TFT基板的制造方法,如图11所示,本申请还提供一种LTPS TFT基板,该LTPS TFT基板包括衬底基板101、设于衬底基板101上的缓冲层102、设于缓冲层102上的多晶硅有源层103、设于多晶硅有源层103上的栅极绝缘层104、设于栅极绝缘层104上的栅极105、在栅极绝缘层104上覆盖栅极105的层间绝缘层106、设于层间绝缘层106上的源极1071和漏极1072、设于层间绝缘层106上的钝化层108,设于钝化层108上的像素电极层109,其中,像素电极层109通过钝化层108上的过孔与漏极1072相连。本实施中多晶硅有源层103具有位于两端的源极接触区1031和源极接触区1032、位于中间的沟道区1035、位于源极接触区1031与沟道区1035之间的轻掺杂区1033、位于漏极接触区1032与沟道区1035之间的轻掺杂区1034;且栅极105远离多晶硅有源层103的一侧设置有凹凸不平的表面,源/漏极接触区的掺杂N离子浓度为1x1014ions/cm2,轻掺杂区的掺杂N离子浓度为1x1012至1x1013ions/cm2范围内。
本申请实施例提供一种LTPS TFT基板的制造方法及LTPS TFT基板,本申请中采用酸性试剂刻蚀所述栅极金属层的表面,形成凹凸不平的表面,在该凹凸不平的表面上涂布光阻图案,增加光阻图案与栅极金属层的附着力,采用酸性试剂刻蚀有光阻图案的栅极金属层的两侧,刻蚀出准栅极,然后用风刀干燥准栅极和光阻图案,光阻图案不会被吹掉,以准栅极为遮蔽层,对多晶硅有源层两端没有被准栅极遮盖的部分进行N型离子重掺杂,由于存在光阻图案的保护,等离子体掺杂过程不会刻蚀掉栅极图案,既能节约一道光罩成本,又能保护栅极的完整性,从而提升LTPS TFT基板制程良率。
综上,虽然本发明已以优选实施例揭露如上,但上述优选实施例并非用以限制本发明,本领域的普通技术人员,在不脱离本发明的精神和范围内,均可作各种更动与润饰,因此本发明的保护范围以权利要求界定的范围为准。
Claims (10)
1.一种LTPS TFT基板的制造方法,其特征在于,包括:
步骤S1、提供衬底基板,在所述衬底基板上形成缓冲层,在所述缓冲层上形成多晶硅有源层,在所述缓冲层上形成覆盖多晶硅有源层的栅极绝缘层,在所述栅极绝缘层上形成栅极金属层;
步骤S2、采用酸性试剂刻蚀所述栅极金属层的表面,形成凹凸不平的表面,在该凹凸不平的表面上涂布光阻图案,采用酸性试剂刻蚀有光阻图案的栅极金属层的两侧,刻蚀出准栅极,然后用风刀干燥所述准栅极和所述光阻图案,以所述准栅极为遮蔽层,对所述多晶硅有源层两端没有被所述准栅极遮盖的部分进行N型离子重掺杂,形成多晶硅有源层两端的源/漏极接触区;
步骤S3、采用光罩对所述准栅极进行干刻,使所述准栅极两侧被横向蚀刻而宽度减小,形成栅极,以所述栅极为遮蔽层,对所述多晶硅有源层两端没有被栅极遮盖的部分进行N型离子轻掺杂,得到多晶硅有源层中部的对应位于所述栅极下方的沟道区以及所述源/漏极接触区和沟道区之间的轻掺杂区,剥离去除所述光阻图案。
2.根据权利要求1所述的LTPS TFT基板的制造方法,其特征在于,所述步骤S2中所述酸性试剂为硝酸和磷酸混合溶液。
4.根据权利要求1所述的LTPS TFT基板的制造方法,其特征在于,所述步骤S2中,凹凸不平的表面为波浪形或锯齿形。
5.根据权利要求1所述的LTPS TFT基板的制造方法,其特征在于,所述步骤S2中,对所述多晶硅有源层进行离子重掺杂时的掺杂离子浓度为1x1014ions/cm2。
6.根据权利要求1所述的LTPS TFT基板的制造方法,其特征在于,所述步骤S3中,对所述多晶硅有源层进行离子轻掺杂时的掺杂离子浓度为1x1012至1x1013ions/cm2范围内。
7.根据权利要求1所述的LTPS TFT基板的制造方法,其特征在于,所述多晶硅有源层的材料为金属氧化物,其中,所述源极接触区和所述漏极接触区均为导电性金属氧化物,所述沟道区为保持半导体特性的金属氧化物。
8.根据权利要求1所述的LTPS TFT基板的制造方法,其特征在于,还包括:
步骤S4、在所述栅极绝缘层上形成覆盖所述栅极的层间绝缘层,在所述层间绝缘层形成源极和漏极,在所述层间绝缘层上形成钝化层,在所述钝化层形成像素电极,其中,所述源极与所述源极接触区电性连接,所述漏极与所述漏极接触区电性连接,所述像素电极通过像素过孔与所述漏极电性连接。
9.一种LTPS TFT基板,所述LTPS TFT基板采用如权利要求1至8任一所述的LTPS TFT基板的制造方法制备而成,其特征在于,包括衬底基板、设于衬底基板上的缓冲层、设于缓冲层上的多晶硅有源层、设于所述多晶硅有源层上的栅极绝缘层、设于所述栅极绝缘层上的栅极、在所述栅极绝缘层上覆盖所述栅极的层间绝缘层及设于所述层间绝缘层上的源/漏极;所述多晶硅有源层具有位于两端的源/漏极接触区、位于中间的沟道区及位于源/漏极接触区与沟道区之间的轻掺杂区;所述栅极远离所述多晶硅有源层的一侧设置有凹凸不平的表面。
10.根据权利要求9所述的LTPS TFT基板,其特征在于,所述源/漏极接触区的掺杂N离子浓度为1x1014ions/cm2,所述轻掺杂区的掺杂N离子浓度为1x1012至1x1013ions/cm2范围内。
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