CN105280716A - 薄膜晶体管的制造方法 - Google Patents

薄膜晶体管的制造方法 Download PDF

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CN105280716A
CN105280716A CN201510587300.9A CN201510587300A CN105280716A CN 105280716 A CN105280716 A CN 105280716A CN 201510587300 A CN201510587300 A CN 201510587300A CN 105280716 A CN105280716 A CN 105280716A
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叶家宏
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AU Optronics Corp
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Abstract

一种薄膜晶体管的制造方法至少包括下列步骤。在基板上依序形成半导体层、金属层与辅助层。在金属层及辅助层位于半导体层上方的情况下，对半导体层进行结晶程序以形成有源层。于形成有源层后，图案化金属层以形成源极与漏极。形成栅极绝缘层以及形成栅极。栅极绝缘层位于栅极以及源极与漏极之间。

Description

薄膜晶体管的制造方法
【技术领域】
本发明是关于一种有源元件的制造方法，且特别是关于一种薄膜晶体管的制造方法。
【背景技术】
近来环保意识抬头，具有低消耗功率、空间利用效率佳、无辐射、高画质等优越特性的平面显示面板(flatdisplaypanels)已成为市场主流。常见的平面显示器包括液晶显示器(liquidcrystaldisplays)、等离子显示器(plasmadisplays)、有机电激发光显示器(electroluminescentdisplays)等。
以目前最普及的液晶显示器为例，液晶显示器主要是由像素阵列基板、彩色滤光基板以及夹设于二者之间的液晶层所构成。在已知的像素阵列基板上，多采用薄膜晶体管作为各个像素结构的切换元件，而切换元件的性能多取决于薄膜晶体管的有源层的品质好坏。薄膜晶体管的有源层(例如：金属氧化物半导体)容易在图案化源极与漏极的过程中或被外界水气损伤，而不利于薄膜晶体管的品质。为改善此问题，在已知的薄膜晶体管制造方法中，先在薄膜晶体管的有源层上形成蚀刻阻挡层，之后再图案化蚀刻阻挡层上方的金属层，以形成薄膜晶体管的源极与漏极。借此，无论是利用湿式或干式蚀刻程序图案化出源极与漏极，湿式蚀刻的蚀刻液或干式蚀刻的等离子都不易损伤薄膜晶体管的有源层。此外，由于蚀刻阻挡层覆盖至少部分的有源层的面积，因此水气接触有源层的几率降低，进而减少了非晶态的有源层因水气影响而劣化成导体的几率。然而，蚀刻阻挡层的设置却造成像素阵列基板的开口率下降、薄膜晶体管的制造成本提高等问题。
【发明内容】
本发明提供一种薄膜晶体管，具高品质且成本低。
本发明的薄膜晶体管的制造方法，包括下列步骤：在基板上依序形成半导体层、金属层以及辅助层；在金属层以及辅助层位于半导体层上方的情况下，对半导体层进行一结晶程序，以形成有源层；于形成有源层后，图案化金属层，以形成源极与漏极；形成栅极；以及形成栅极绝缘层，其中栅极绝缘层位于栅极以及源极与漏极之间。
基于上述，在本发明一实施例的薄膜晶体管制造方法中，在图案化金属层以形成源极与漏极之前，利用一结晶程序形成具有结晶成份的有源层。利用所述结晶成份的抗蚀刻特性，有源层在图案化金属层的过程中不易受到蚀刻液的损伤，进而能够制造出高品质且低成本的薄膜晶体管。
为让本发明的上述特征和优点能更明显易懂，下文特举实施例，并配合所附图式作详细说明如下。
【附图说明】
图1为本发明一实施例的薄膜晶体管制造方法的流程示意图。
图2A～图2E为本发明一实施例的薄膜晶体管制造方法的剖面示意图。
图3示出本发明一实施例的有源层的X射线绕射(X-rayDiffraction；XRD)图谱。
图4A～图4D为本发明另一实施例的薄膜晶体管制造方法的剖面示意图。
【符号说明】
10：基板
110：半导体层
110a：顶面
110b：侧壁
120：金属层
130：辅助层
CH：有源层
D：漏极
G：栅极
GI：栅极绝缘层
L：准分子激光
MCH、M1、M2：主要分布
S110～S150：步骤
S210～S230：曲线
S：源极
【具体实施方式】
图1为本发明一实施例的薄膜晶体管制造方法的流程示意图。请参照图1，薄膜晶体管的制造方法至少包括下列步骤：在基板上依序形成半导体层、金属层以及辅助层(步骤S110)；在金属层以及辅助层位于半导体层上方的情况下，对半导体层进行结晶程序，以形成有源层(步骤S120)；于形成有源层后，图案化金属层，以形成源极与漏极(步骤S130)；形成栅极绝缘层(S140)；以及，形成栅极(步骤S150)。需说明的是，上述步骤S110～S150的顺序并不限于图1所示的步骤S110、S120、S130、S140、S150。上述步骤S110～S150的顺序可做适当的更动。举例而言，上述步骤S110～S150的顺序亦可依序为步骤S150、S140、S110、S120、S130。
以下将搭配图2A～图2E、图4A～图4D对所述的薄膜晶体管的制造方法进行详细的说明。
图2A～图2E为本发明一实施例的薄膜晶体管制造方法的剖面示意图。请参照图2A，在本实施例中，可先在基板10上依序形成半导体层110、金属层120以及辅助层130。半导体层110可为一区块，而金属层120与辅助层130可为一整面性膜层且覆盖半导体层110的顶面110a与侧壁110b。基板10可为透光基板、或不透光/反光基板。透光基板的材质可为玻璃、石英、有机聚合物或其它可适用的材料。不透光/反光基板的材质可为导电材料、晶圆、陶瓷或其它可适用的材料。
在本实施例中，半导体层110例如为金属氧化物半导体层。更进一步地说，金属氧化物半导体的材料可为包含铟(In)的金属氧化物半导体材料{例如：氧化铟镓锌(Indium-Gallium-ZincOxide；IGZO)、氧化铟锌(Indium-ZincOxide；IZO)、氧化铟锡(Indium-TinOxide；ITO)或是其他适当材料}、含锌(Zn)的金属氧化物半导体材料{例如：氧化锌(ZnO)、氧化镓锌(Gallium-ZincOxide；GZO)、氧化锌锡(Zinc-TinOxide；ZTO)或是其他适当材料}、含镓(Ga)的金属氧化物半导体材{例如：氧化铟镓锌(Indium-Gallium-ZincOxide；IGZO)或是其他适当材料}。然而，本发明并不限制半导体层110的材料一定要是金属氧化物半导体，在其他实施例中，半导体层110的材料亦可为非晶硅、多晶硅、微晶硅、单晶硅、有机半导体材料、或其它适当的材料。金属层120的材质可为钼(Mo)、铝(Al)、钨化钼(MoW)、钨化铜(MoCu)、其他适当材料、或上述至少二者的组合。辅助层130的材质可为非晶硅、多晶硅、单晶、其他适当材料、或上述至少二者的组合。
请参照图2A，接着，在本实施例中，可选择性地利用快速热退火制程(RapidThermalProcessing；RTP)(未绘示)对辅助层130或/及金属层120进行一去氢处理程序，以降低氢爆的几率。然而，本发明不限于此，在其他实施例中，亦可利用其他方法进行去氢处理程序，或省略去氢处理的步骤。
请参照图2B，接着，在金属层120以及辅助层130位于半导体层110上方的情况下，对半导体层110进行结晶程序，以使半导体层110转变为有源层CH。举例而言，在本实施例中，可利用准分子激光结晶(ExcimerLaserCrystallization；ELA)程序，使半导体层110转变为有源层CH。详言之，可令准分子激光L照射辅助层130，准分子激光L的光线波长与辅助层130的吸光波长匹配，因此辅助层130会吸收准分子激光L而产生热能，所述热能则透过金属层120传递至半导体层110，进而使得半导体层110结晶，以形成有源层CH。金属层120除了扮演传递热能的角色外，还可降低半导体层110于转变成有源层CH的过程发生剥落(peeling)的几率。在本实施例中，准分子激光L的能量例如是大于70微焦耳(mJ)，且可选择性地在摄氏0度至25度下进行准分子激光结晶程序。然而，本发明不限于此，在其他实施例中，亦可利用其他适当方法(例如：以红外飞秒激光、绿光激光进行结晶程序)，使半导体层110结晶，以形成有源层CH。
利用结晶程序形成的有源层CH具有结晶成份，以下以图3为例并佐证的。图3示出本发明一实施例的有源层的X射线绕射(X-rayDiffraction；XRD)图谱。请参照图3，曲线S210代表利用结晶程序形成的有源层CH(例如：IGZO)的X射线绕射图谱，曲线S220代表InGaZnO4的X射线绕射图谱，而曲线S230代表InGaO(ZnO)15的X射线绕射图谱。比对有源层CH的X射线绕射图谱(即曲线S210)与InGaZnO4的X射线绕射图谱(即曲线S220)及InGaO(ZnO)15的X射线绕射图谱(即曲线S230)可发现，有源层CH的X射线绕射图谱(即曲线S210)的主要分布MCH与InGaZnO4的X射线绕射图谱(即曲线S220)的主要分布M1以及InGaO(ZnO)15的X射线绕射图谱(即曲线S230)的主要分布M2重叠。由此可知，有源层CH具有例如是InGaZnO4以及InGaO(ZnO)15的结晶成份，但本发明不以此为限。
请参照图2C，接着，在本实施例中，可选择性地在图案化金属层120之前，移除辅助层130。举例而言，在本实施例中，可利用湿式蚀刻程序去除辅助层130，但本发明不以此为限。此外，需说明的是，本发明并不限制一定要在图案化金属层120之前移除辅助层130。在本发明另一实施例中，亦可同时图案化金属层120与辅助层130，然后，再将与图案化金属层120(即源极S与漏极D)切齐的图案化辅助层(未绘示)移除。
请参照图2D，接着，图案化金属层120，以形成源极S与漏极D。源极S与漏极D彼此分离，且分别与有源层CH的二端电性连接。举例而言，在本实施例中，可利用湿式蚀刻程序(wetetchingprocess)图案化金属层120，以形成源极S与漏极D。值得一提的是，由于有源层CH是利用结晶程序形成的，因此有源层CH具有结晶成份。利用湿式蚀刻程序图案化金属层120以形成源极S、漏极D时，有源层CH的结晶成份可抵抗湿式蚀刻程序中所使用的蚀刻液的侵蚀，而使有源层CH不易受损。如此一来，便可利用制程时间短、成本低的湿式蚀刻程序图案化金属层120以形成源极S与漏极D，并兼顾最终形成的有源层CH的品质，进而制作出品质佳且成本低的薄膜晶体管。
请参照图2E，接着，可形成栅极绝缘层GI。栅极绝缘层GI覆盖源极S、漏极D以及被源极S与漏极D暴露出的部分有源层CH。接着，可于栅极绝缘层GI上形成栅极G。栅极绝缘层GI位于栅极G以及源极S与漏极D之间。栅极G利用栅极绝缘层GI与源极S、漏极D隔开，且栅极G与有源层CH重叠。于此便完成了本实施例的薄膜晶体管。
如图2E所示，在本实施例中，栅极G位于有源层CH上方，意即，本实施例的薄膜晶体管可为一顶部栅极型薄膜晶体管(topgateTFT)。然而，本发明的薄膜晶体管制造方法并不限于仅能用以制造顶部栅极型薄膜晶体管，本发明的薄膜晶体管制造方法亦可用于制造其他型式的薄膜晶体管，以下以图4A～图4D为例说明的。
图4A～图4D为本发明另一实施例的薄膜晶体管制造方法的剖面示意图。图4A～图4D的薄膜晶体管制造方法与图2A～图2E的薄膜晶体管制造方法类似，因此相同或相对应的元件以相同或相对应的标号表示。图4A～图4D的薄膜晶体管制造方法与图2A～图2E的薄膜晶体管制造方法的差异在于：二者形成栅极G与栅极绝缘层GI的时间点不同。以下主要就此差异处做说明，二者相同的处还请依照图4A～图4D中的标号对应地参照前述说明，于此便不再重述。
请参照图4A，在本实施例中，可先在基板10上形成栅极G，然后，于栅极G上形成栅极绝缘层GI。接着，在栅极绝缘层GI上依序形成图案化半导体层110、金属层120以及辅助层130，其中半导体层110与栅极G重叠。请参照图4B，接着，在金属层120以及辅助层130位于半导体层110上方的情况下，对半导体层110进行一结晶程序，以形成有源层CH。请参照图4C，接着，移除辅助层130。请参照图4D，接着，图案化金属层120，以形成源极S以及漏极D，于此便完成了薄膜晶体管。
如图4D所示，在本实施例中，栅极G位于有源层CH下方，意即，本实施例的薄膜晶体管可为一底部栅极型薄膜晶体管(bottomgateTFT)。然而，需说明的是，本发明的薄膜晶体管制造方法并不限于仅能用以制造前述的顶部栅极型及底部栅极型薄膜晶体管，本发明的薄膜晶体管制造方法亦可用于制造其他型式的薄膜晶体管(例如：双栅极薄膜晶体管等)。本领域具有通常知识者根据前述说明应能够利用本发明的薄膜晶体管制造方法实现其他型式的薄膜晶体管，故于此便不再逐一详述。
综上所述，在本发明一实施例的薄膜晶体管制造方法中，在图案化金属层以形成源极与漏极之前，便利用一结晶程序形成具有结晶成份的有源层。利用所述结晶成份的抗蚀刻特性，有源层在图案化金属层的过程中不易受到蚀刻液的损伤，进而能够制造出高品质且低成本的薄膜晶体管。
虽然本发明已以实施例揭露如上，然其并非用以限定本发明，任何所属技术领域中具有通常知识者，在不脱离本发明的精神和范围内，当可作些许的更动与润饰，故本发明的保护范围当视后附的申请专利范围所界定者为准。

Claims (11)

1.一种薄膜晶体管的制造方法，其特征在于，包括：
在一基板上依序形成一半导体层、一金属层以及一辅助层；
在该金属层以及该辅助层位于该半导体层上方的情况下，对该半导体层进行一结晶程序，以形成一有源层；
于形成该有源层后，图案化该金属层，以形成一源极与一漏极；
形成一栅极；以及
形成一栅极绝缘层，其中该栅极绝缘层位于该栅极以及该源极与该漏极之间。
2.如权利要求1所述的薄膜晶体管的制造方法，其特征在于，于形成该辅助层之后，更包括对该辅助层或该金属层进行一去氢处理程序。
3.如权利要求1所述的薄膜晶体管的制造方法，其特征在于，该辅助层包括非晶硅、多晶硅或单晶。
4.如权利要求1所述的薄膜晶体管的制造方法，其特征在于，该结晶程序包括以准分子激光、红外飞秒激光、绿光激光进行结晶程序。
5.如权利要求4所述的薄膜晶体管的制造方法，其特征在于，该准分子激光结晶程序所使用的准分子激光的能量大于70微焦耳(mJ)。
6.如权利要求1所述的薄膜晶体管的制造方法，其特征在于，该金属层包括钼、铝、钨化钼或钨化铜。
7.如权利要求1所述的薄膜晶体管的制造方法，其特征在于，该结晶程序于摄氏0度至25度下进行。
8.如权利要求1所述的薄膜晶体管的制造方法，其特征在于，该半导体层包括含铟(In)的金属氧化物半导体材料、含锌(Zn)的金属氧化物半导体材料、或是含镓(Ga)的金属氧化物半导体材料。
9.如权利要求1所述的薄膜晶体管的制造方法，其特征在于，更包括：移除该辅助层。
10.如权利要求1所述的薄膜晶体管的制造方法，其特征在于，该形成该栅极以及形成该栅极绝缘层的步骤是先于形成该半导体层、该金属层以及该辅助层的步骤。
11.如权利要求1所述的薄膜晶体管的制造方法，其特征在于，形成该栅极以及形成该栅极绝缘层的步骤是后于形成该半导体层、该金属层以及该辅助层的步骤，且形成该栅极的步骤是后于形成该栅极绝缘层的步骤。
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