CN108649016A - 阵列基板的制作方法 - Google Patents
阵列基板的制作方法 Download PDFInfo
- Publication number
- CN108649016A CN108649016A CN201810439208.1A CN201810439208A CN108649016A CN 108649016 A CN108649016 A CN 108649016A CN 201810439208 A CN201810439208 A CN 201810439208A CN 108649016 A CN108649016 A CN 108649016A
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- China
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- photoresist
- photoresist portion
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- array substrate
- production method
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- 239000000758 substrate Substances 0.000 title claims abstract description 80
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 35
- 238000002161 passivation Methods 0.000 claims abstract description 30
- 239000004065 semiconductor Substances 0.000 claims abstract description 22
- 229920002120 photoresistant polymer Polymers 0.000 claims description 115
- 238000000034 method Methods 0.000 claims description 27
- 229910052751 metal Inorganic materials 0.000 claims description 25
- 239000002184 metal Substances 0.000 claims description 25
- 238000005530 etching Methods 0.000 claims description 19
- 239000000463 material Substances 0.000 claims description 14
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 5
- 239000004411 aluminium Substances 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 239000011733 molybdenum Substances 0.000 claims description 5
- 229910052750 molybdenum Inorganic materials 0.000 claims description 5
- 238000001039 wet etching Methods 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 3
- 238000000059 patterning Methods 0.000 claims description 3
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 3
- 229920005591 polysilicon Polymers 0.000 claims description 3
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 3
- 229910021419 crystalline silicon Inorganic materials 0.000 claims description 2
- 239000000377 silicon dioxide Substances 0.000 claims description 2
- RHZWSUVWRRXEJF-UHFFFAOYSA-N indium tin Chemical compound [In].[Sn] RHZWSUVWRRXEJF-UHFFFAOYSA-N 0.000 claims 1
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 238000003860 storage Methods 0.000 abstract description 25
- 239000003990 capacitor Substances 0.000 abstract description 3
- 238000010276 construction Methods 0.000 abstract description 3
- 230000005540 biological transmission Effects 0.000 description 11
- 239000004973 liquid crystal related substance Substances 0.000 description 11
- 238000010586 diagram Methods 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 7
- 239000010408 film Substances 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 4
- 239000010409 thin film Substances 0.000 description 3
- 230000005611 electricity Effects 0.000 description 2
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical group O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 238000003491 array Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000003292 glue Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000010287 polarization Effects 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 239000000565 sealant Substances 0.000 description 1
- 238000007789 sealing Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 229910052814 silicon oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1259—Multistep manufacturing methods
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Liquid Crystal (AREA)
- Thin Film Transistor (AREA)
Abstract
Description
Claims (10)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201810439208.1A CN108649016B (zh) | 2018-05-09 | 2018-05-09 | 阵列基板的制作方法 |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
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CN201810439208.1A CN108649016B (zh) | 2018-05-09 | 2018-05-09 | 阵列基板的制作方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN108649016A true CN108649016A (zh) | 2018-10-12 |
CN108649016B CN108649016B (zh) | 2020-11-24 |
Family
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Family Applications (1)
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CN201810439208.1A Active CN108649016B (zh) | 2018-05-09 | 2018-05-09 | 阵列基板的制作方法 |
Country Status (1)
Country | Link |
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CN (1) | CN108649016B (zh) |
Cited By (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN109873001A (zh) * | 2019-02-26 | 2019-06-11 | 深圳市华星光电半导体显示技术有限公司 | 阵列基板及其制作方法 |
CN110085604A (zh) * | 2019-04-30 | 2019-08-02 | 深圳市华星光电技术有限公司 | Tft阵列基板及其制作方法 |
CN110600425A (zh) * | 2019-08-20 | 2019-12-20 | 武汉华星光电技术有限公司 | 阵列基板的制备方法及阵列基板 |
CN110993644A (zh) * | 2019-11-06 | 2020-04-10 | 深圳市华星光电半导体显示技术有限公司 | Oled显示面板及制备方法 |
CN111129037A (zh) * | 2019-12-25 | 2020-05-08 | Tcl华星光电技术有限公司 | Tft阵列基板及其制作方法 |
CN111180396A (zh) * | 2020-02-26 | 2020-05-19 | 福建华佳彩有限公司 | 一种氧化物半导体基板结构及制作方法 |
WO2020133651A1 (zh) * | 2018-12-24 | 2020-07-02 | 深圳市华星光电半导体显示技术有限公司 | 像素电极结构及其制作方法 |
CN112289807A (zh) * | 2020-10-27 | 2021-01-29 | 武汉华星光电半导体显示技术有限公司 | 一种oled显示面板 |
CN112786667A (zh) * | 2021-01-05 | 2021-05-11 | 深圳市华星光电半导体显示技术有限公司 | Amoled显示面板及其制备方法 |
CN113628974A (zh) * | 2021-07-27 | 2021-11-09 | 深圳市华星光电半导体显示技术有限公司 | 阵列基板的制备方法和阵列基板 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106486495A (zh) * | 2015-08-27 | 2017-03-08 | 乐金显示有限公司 | 薄膜晶体管基板、显示器及其制造方法 |
Family Cites Families (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101236932A (zh) * | 2008-03-07 | 2008-08-06 | 上海广电光电子有限公司 | 薄膜晶体管阵列基板的制造方法 |
CN103226272B (zh) * | 2013-04-16 | 2015-07-22 | 合肥京东方光电科技有限公司 | 一种阵列基板及其制备方法、显示装置 |
CN106024705B (zh) * | 2016-06-01 | 2019-04-30 | 深圳市华星光电技术有限公司 | Tft基板的制作方法 |
-
2018
- 2018-05-09 CN CN201810439208.1A patent/CN108649016B/zh active Active
Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN106486495A (zh) * | 2015-08-27 | 2017-03-08 | 乐金显示有限公司 | 薄膜晶体管基板、显示器及其制造方法 |
Cited By (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020133651A1 (zh) * | 2018-12-24 | 2020-07-02 | 深圳市华星光电半导体显示技术有限公司 | 像素电极结构及其制作方法 |
CN109873001A (zh) * | 2019-02-26 | 2019-06-11 | 深圳市华星光电半导体显示技术有限公司 | 阵列基板及其制作方法 |
WO2020172959A1 (zh) * | 2019-02-26 | 2020-09-03 | 深圳市华星光电半导体显示技术有限公司 | 阵列基板及其制作方法、显示装置 |
CN110085604B (zh) * | 2019-04-30 | 2021-04-23 | Tcl华星光电技术有限公司 | Tft阵列基板及其制作方法 |
CN110085604A (zh) * | 2019-04-30 | 2019-08-02 | 深圳市华星光电技术有限公司 | Tft阵列基板及其制作方法 |
WO2020220529A1 (zh) * | 2019-04-30 | 2020-11-05 | 深圳市华星光电技术有限公司 | Tft 阵列基板及其制作方法 |
CN110600425A (zh) * | 2019-08-20 | 2019-12-20 | 武汉华星光电技术有限公司 | 阵列基板的制备方法及阵列基板 |
CN110600425B (zh) * | 2019-08-20 | 2023-07-04 | 武汉华星光电技术有限公司 | 阵列基板的制备方法及阵列基板 |
CN110993644A (zh) * | 2019-11-06 | 2020-04-10 | 深圳市华星光电半导体显示技术有限公司 | Oled显示面板及制备方法 |
CN111129037A (zh) * | 2019-12-25 | 2020-05-08 | Tcl华星光电技术有限公司 | Tft阵列基板及其制作方法 |
WO2021128508A1 (zh) * | 2019-12-25 | 2021-07-01 | Tcl华星光电技术有限公司 | Tft阵列基板及其制作方法 |
US11374026B2 (en) | 2019-12-25 | 2022-06-28 | Tcl China Star Optoelectronics Technology Co., Ltd. | TFT array substrate and manufacturing method thereof |
CN111180396A (zh) * | 2020-02-26 | 2020-05-19 | 福建华佳彩有限公司 | 一种氧化物半导体基板结构及制作方法 |
CN112289807A (zh) * | 2020-10-27 | 2021-01-29 | 武汉华星光电半导体显示技术有限公司 | 一种oled显示面板 |
CN112786667A (zh) * | 2021-01-05 | 2021-05-11 | 深圳市华星光电半导体显示技术有限公司 | Amoled显示面板及其制备方法 |
CN113628974A (zh) * | 2021-07-27 | 2021-11-09 | 深圳市华星光电半导体显示技术有限公司 | 阵列基板的制备方法和阵列基板 |
CN113628974B (zh) * | 2021-07-27 | 2023-10-31 | 深圳市华星光电半导体显示技术有限公司 | 阵列基板的制备方法和阵列基板 |
Also Published As
Publication number | Publication date |
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CN108649016B (zh) | 2020-11-24 |
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Legal Events
Date | Code | Title | Description |
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PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
CP01 | Change in the name or title of a patent holder |
Address after: 9-2 Tangming Avenue, Guangming New District, Shenzhen City, Guangdong Province Patentee after: TCL China Star Optoelectronics Technology Co.,Ltd. Address before: 9-2 Tangming Avenue, Guangming New District, Shenzhen City, Guangdong Province Patentee before: Shenzhen China Star Optoelectronics Technology Co.,Ltd. |
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CP01 | Change in the name or title of a patent holder | ||
TR01 | Transfer of patent right |
Effective date of registration: 20210625 Address after: No. 338, Fangzhou Road, Suzhou Industrial Park, Suzhou, Jiangsu 215000 Patentee after: Suzhou Huaxing Optoelectronic Technology Co.,Ltd. Address before: 9-2 Tangming Avenue, Guangming New District, Shenzhen City, Guangdong Province Patentee before: TCL China Star Optoelectronics Technology Co.,Ltd. |
|
TR01 | Transfer of patent right |