CN108630761A - 半导体元件制造方法 - Google Patents
半导体元件制造方法 Download PDFInfo
- Publication number
- CN108630761A CN108630761A CN201711292073.2A CN201711292073A CN108630761A CN 108630761 A CN108630761 A CN 108630761A CN 201711292073 A CN201711292073 A CN 201711292073A CN 108630761 A CN108630761 A CN 108630761A
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- Prior art keywords
- metal
- race
- metal dithionite
- film
- dithionite
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- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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- 239000004065 semiconductor Substances 0.000 title claims abstract description 30
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 12
- 229910052751 metal Inorganic materials 0.000 claims abstract description 172
- 239000002184 metal Substances 0.000 claims abstract description 172
- 150000001875 compounds Chemical class 0.000 claims abstract description 136
- GRWZHXKQBITJKP-UHFFFAOYSA-L dithionite(2-) Chemical compound [O-]S(=O)S([O-])=O GRWZHXKQBITJKP-UHFFFAOYSA-L 0.000 claims abstract description 133
- 239000000758 substrate Substances 0.000 claims abstract description 42
- 229910052798 chalcogen Inorganic materials 0.000 claims abstract description 32
- 150000001787 chalcogens Chemical class 0.000 claims abstract description 32
- 238000001020 plasma etching Methods 0.000 claims abstract description 25
- 230000008439 repair process Effects 0.000 claims abstract description 9
- 229910052717 sulfur Inorganic materials 0.000 claims abstract description 9
- 229910052714 tellurium Inorganic materials 0.000 claims abstract description 8
- 229910052711 selenium Inorganic materials 0.000 claims abstract description 7
- 239000010410 layer Substances 0.000 description 55
- 229910052961 molybdenite Inorganic materials 0.000 description 46
- 229910052982 molybdenum disulfide Inorganic materials 0.000 description 46
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 35
- 229910052760 oxygen Inorganic materials 0.000 description 35
- 239000001301 oxygen Substances 0.000 description 35
- 238000005530 etching Methods 0.000 description 33
- 238000000034 method Methods 0.000 description 28
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 24
- 239000000463 material Substances 0.000 description 24
- 150000004770 chalcogenides Chemical class 0.000 description 20
- 238000009832 plasma treatment Methods 0.000 description 20
- 210000002381 plasma Anatomy 0.000 description 19
- 239000002356 single layer Substances 0.000 description 17
- 239000013078 crystal Substances 0.000 description 14
- CWQXQMHSOZUFJS-UHFFFAOYSA-N molybdenum disulfide Chemical compound S=[Mo]=S CWQXQMHSOZUFJS-UHFFFAOYSA-N 0.000 description 14
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- 238000005240 physical vapour deposition Methods 0.000 description 12
- 239000000377 silicon dioxide Substances 0.000 description 12
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- 238000005229 chemical vapour deposition Methods 0.000 description 10
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- 238000004833 X-ray photoelectron spectroscopy Methods 0.000 description 9
- 238000000231 atomic layer deposition Methods 0.000 description 9
- 229920006254 polymer film Polymers 0.000 description 9
- 229910016021 MoTe2 Inorganic materials 0.000 description 8
- 229910003090 WSe2 Inorganic materials 0.000 description 8
- 230000008859 change Effects 0.000 description 8
- 238000000151 deposition Methods 0.000 description 8
- 230000008021 deposition Effects 0.000 description 8
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- 150000004706 metal oxides Chemical class 0.000 description 8
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- 150000003624 transition metals Chemical class 0.000 description 8
- 229920003229 poly(methyl methacrylate) Polymers 0.000 description 7
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- 238000001237 Raman spectrum Methods 0.000 description 6
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 6
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- 229910052976 metal sulfide Inorganic materials 0.000 description 4
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- 238000001259 photo etching Methods 0.000 description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 4
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- 229910052782 aluminium Inorganic materials 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 229910052786 argon Inorganic materials 0.000 description 3
- 239000012159 carrier gas Substances 0.000 description 3
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- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 3
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- ITWBWJFEJCHKSN-UHFFFAOYSA-N 1,4,7-triazonane Chemical compound C1CNCCNCCN1 ITWBWJFEJCHKSN-UHFFFAOYSA-N 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 2
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- 229910052581 Si3N4 Inorganic materials 0.000 description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 2
- 229910004200 TaSiN Inorganic materials 0.000 description 2
- 229910010038 TiAl Inorganic materials 0.000 description 2
- 229910010037 TiAlN Inorganic materials 0.000 description 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- QCWXUUIWCKQGHC-UHFFFAOYSA-N Zirconium Chemical compound [Zr] QCWXUUIWCKQGHC-UHFFFAOYSA-N 0.000 description 2
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- 230000008020 evaporation Effects 0.000 description 2
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- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 150000002500 ions Chemical class 0.000 description 2
- 229910052741 iridium Inorganic materials 0.000 description 2
- GKOZUEZYRPOHIO-UHFFFAOYSA-N iridium atom Chemical compound [Ir] GKOZUEZYRPOHIO-UHFFFAOYSA-N 0.000 description 2
- WPBNNNQJVZRUHP-UHFFFAOYSA-L manganese(2+);methyl n-[[2-(methoxycarbonylcarbamothioylamino)phenyl]carbamothioyl]carbamate;n-[2-(sulfidocarbothioylamino)ethyl]carbamodithioate Chemical compound [Mn+2].[S-]C(=S)NCCNC([S-])=S.COC(=O)NC(=S)NC1=CC=CC=C1NC(=S)NC(=O)OC WPBNNNQJVZRUHP-UHFFFAOYSA-L 0.000 description 2
- 229910001092 metal group alloy Inorganic materials 0.000 description 2
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- 238000000103 photoluminescence spectrum Methods 0.000 description 2
- 229910052697 platinum Inorganic materials 0.000 description 2
- 229910052702 rhenium Inorganic materials 0.000 description 2
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 2
- 229910052709 silver Inorganic materials 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- 238000005486 sulfidation Methods 0.000 description 2
- 229910003468 tantalcarbide Inorganic materials 0.000 description 2
- 229910052715 tantalum Inorganic materials 0.000 description 2
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 2
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 2
- PORWMNRCUJJQNO-UHFFFAOYSA-N tellurium atom Chemical compound [Te] PORWMNRCUJJQNO-UHFFFAOYSA-N 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 2
- 229910052721 tungsten Inorganic materials 0.000 description 2
- 239000010937 tungsten Substances 0.000 description 2
- 229910052726 zirconium Inorganic materials 0.000 description 2
- 229910004129 HfSiO Inorganic materials 0.000 description 1
- 240000001439 Opuntia Species 0.000 description 1
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 239000000956 alloy Substances 0.000 description 1
- MJGARAGQACZIPN-UHFFFAOYSA-N aluminum hafnium(4+) oxygen(2-) Chemical compound [O--].[O--].[Al+3].[Hf+4] MJGARAGQACZIPN-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 238000004380 ashing Methods 0.000 description 1
- 125000004429 atom Chemical group 0.000 description 1
- 230000002457 bidirectional effect Effects 0.000 description 1
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- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000003628 erosive effect Effects 0.000 description 1
- CJNBYAVZURUTKZ-UHFFFAOYSA-N hafnium(IV) oxide Inorganic materials O=[Hf]=O CJNBYAVZURUTKZ-UHFFFAOYSA-N 0.000 description 1
- 230000035876 healing Effects 0.000 description 1
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- 238000007254 oxidation reaction Methods 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 238000002161 passivation Methods 0.000 description 1
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- 239000003058 plasma substitute Substances 0.000 description 1
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- 238000009738 saturating Methods 0.000 description 1
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- 235000012239 silicon dioxide Nutrition 0.000 description 1
- 238000005987 sulfurization reaction Methods 0.000 description 1
- XSOKHXFFCGXDJZ-UHFFFAOYSA-N telluride(2-) Chemical compound [Te-2] XSOKHXFFCGXDJZ-UHFFFAOYSA-N 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 229910001845 yogo sapphire Inorganic materials 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02568—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B01—PHYSICAL OR CHEMICAL PROCESSES OR APPARATUS IN GENERAL
- B01J—CHEMICAL OR PHYSICAL PROCESSES, e.g. CATALYSIS OR COLLOID CHEMISTRY; THEIR RELEVANT APPARATUS
- B01J27/00—Catalysts comprising the elements or compounds of halogens, sulfur, selenium, tellurium, phosphorus or nitrogen; Catalysts comprising carbon compounds
- B01J27/02—Sulfur, selenium or tellurium; Compounds thereof
- B01J27/04—Sulfides
- B01J27/043—Sulfides with iron group metals or platinum group metals
- B01J27/045—Platinum group metals
-
- C—CHEMISTRY; METALLURGY
- C01—INORGANIC CHEMISTRY
- C01G—COMPOUNDS CONTAINING METALS NOT COVERED BY SUBCLASSES C01D OR C01F
- C01G39/00—Compounds of molybdenum
- C01G39/06—Sulfides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02205—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates the layer being characterised by the precursor material for deposition
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- H—ELECTRICITY
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/0242—Crystalline insulating materials
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02494—Structure
- H01L21/02496—Layer structure
- H01L21/02499—Monolayers
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
- H01L21/02614—Transformation of metal, e.g. oxidation, nitridation
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
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- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
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- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
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- H01L21/3065—Plasma etching; Reactive-ion etching
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- H—ELECTRICITY
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
- H01L29/1025—Channel region of field-effect devices
- H01L29/1029—Channel region of field-effect devices of field-effect transistors
- H01L29/1033—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure
- H01L29/1054—Channel region of field-effect devices of field-effect transistors with insulated gate, e.g. characterised by the length, the width, the geometric contour or the doping structure with a variation of the composition, e.g. channel with strained layer for increasing the mobility
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- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
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Abstract
一种半导体元件制造方法,包括通过将等离子施加到多个金属二硫族化物膜,来等离子蚀刻设置在基板上的多个金属二硫族化物膜的一部分,此多个金属二硫族化物膜包含金属和硫族元素的化合物。在等离子蚀刻之后,将硫族元素施加到多个金属二硫族化物膜的剩余部分,以修复等离子蚀刻对多个金属二硫族化物膜的剩余部分的损伤。所述硫族元素是S、Se或Te。
Description
技术领域
本揭示是关于用于半导体元件的二维(2D)材料,并且更特别地是关于2D晶体异质结构及其制造方法。
背景技术
二维半导体(亦称为2D半导体)是一种具有原子尺度厚度的天然半导体。2D单层半导体是值得注意的,因为它表现出比传统使用的体形式更强的压电耦合,此使得能够在用于感测和致动的新电子部件中进行2D材料应用。过渡金属二硫族化物(Transition metaldichalcogenides)已经用于2D元件。用于元件应用的单2D过渡金属二硫族化物材料的效能正达到上限。因为2D材料非常薄,如单个单层一般薄,所以蚀刻2D材料难以在不损坏2D材料的剩余未蚀刻部分的情况下进行。
发明内容
一种制造半导体元件的方法包括通过将等离子施加到多个金属二硫族化物膜,来等离子蚀刻设置在基板上的多个金属二硫族化物膜的一部分,此多个金属二硫族化物膜包含金属和硫族元素的化合物。在等离子蚀刻之后,将硫族元素施加到多个金属二硫族化物膜的剩余部分,以修复等离子蚀刻对多个金属二硫族化物膜的剩余部分的损伤。所述硫族元素是S、Se或Te。
附图说明
当结合附图阅读时,从以下详细描述可以最好地理解本揭示案。应强调的是,根据行业中的标准惯例,各个特征并未按比例绘制并且仅用于说明目的。事实上,为了论述的清楚性,可以任意地增大或缩小各个特征件的尺寸。
图1A和图1B绘示根据本揭示的一个实施方式的半导体元件的平面图和剖面图;
图2绘示了暴露于蚀刻剂达不同时间段的MoS2膜的拉曼光谱;
图3绘示了在暴露于蚀刻剂之后经历再硫化达不同时间段的MoS2膜的拉曼光谱;
图4绘示了暴露于蚀刻剂达不同时间段的MoS2膜的X射线光电子光谱曲线;
图5绘示了在暴露于蚀刻剂之后经历再硫化达不同时间段的MoS2膜的光致发光光谱;
图6绘示了根据本揭示的实施方式的元件的漏极电压对漏极电流;
图7A和图7B是根据本揭示的一个实施方式的用于形成半导体元件的方法的顺序级的平面图和剖面图;
图8A和图8B是根据本揭示的一个实施方式的用于形成半导体元件的方法的顺序级的平面图和剖面图;
图9A和图9B是根据本揭示的一个实施方式的用于形成半导体元件的方法的顺序级的平面图和剖面图;
图10是根据本揭示的一个实施方式的用于形成半导体元件的方法的顺序级的剖面图;
图11A和图11B是根据本揭示的一个实施方式的用于形成半导体元件的方法的顺序级的平面图和剖面图;
图12绘示了根据本揭示的实施方式的元件的栅极电压对漏极电流。
具体实施方式
应当理解,以下揭示内容提供了用于实施本揭露的不同特征的许多不同实施方式或实例。下文描述了部件和布置的特定实施方式或实例以简化本揭示案。这些当然仅仅是实例,而并非意欲为限制性的。例如,元件的尺寸不限于所揭示的范围或值,而是可以取决于元件的制程条件和/或所需的特性。此外,在接下来的描述中在第二特征上方或之上形成第一特征可以包括其中第一和第二特征形成为直接接触的实施方式,并且亦可以包括其中可以在第一和第二特征之间插置有额外特征,使得第一和第二特征可以不是直接接触的实施方式。为了简单和清楚起见,可以以不同的尺度任意绘制各种特征。
此外,在本文中可以出于描述目的使用诸如“在……下方”、“在……下面”、“低于……”、“在……上方”、“在……上面”等之类的空间相对术语,从而描述一个元件或特征与另一元件或特征的关系,如图所示。空间相对术语意欲涵盖除了附图所绘示的取向之外,设备在使用或操作中的不同取向。此元件可以以其他方式取向(旋转90度或在其他取向上),并且本文中所使用的空间相对描述词同样可以相应被解释。另外,术语“由......制成”可以意谓“包含”或“由......组成”。
在本揭示的一些实施方式中,2D材料是具有约0.5nm至约10nm的层厚度的金属二硫族化物,(金属二硫族化物不包含金属氧化物)。在一些实施方式中,金属二硫族化物是过渡金属二硫族化物。在一些实施方式中,过渡金属二硫族化物选自由以下项组成的群组:MoS2、WS2、MoSe2、WSe2、MoTe2以及WTe2。
最近已经在2D晶体异质结构领域中有增强2D元件效能方面的研究。2D晶体异质结构能够提供相较于单材料2D结构改良的元件效能。可以通过使用化学气相沉积(chemicalvapor deposition,CVD)生长或对预沉积的过渡金属进行硫化来垂直地建立2D晶体异质结构。例如,与MoS2晶体管相比,观察到了WS2/MoS2异质结构元件的显著漏极电流增加。具有MoS2和WS2/MoS2异质结构作为沟道的两个元件的场效应迁移率值分别为0.27cm2/V·s和0.69cm2/V·s。此结果指示II型带对准、从WS2到MoS2的电子注入、以及在热平衡下较高电子浓度的通道的形成可能是此种现象的原因。I型结构是产生强烈光致发光的单一材料单层,而II型结构由于II型异质结构的低得多的光学重组机率而产生显著更少的光致发光。
图1A和图1B中绘示根据本揭示的一个实施方式的顶栅2D晶体异质结构半导体元件100。图1A是平面图,而图1B是半导体元件100的根据图1A的线A-A的剖面图。半导体元件100包括形成在基板10上的第一金属二硫族化物膜15。第二金属二硫族化物膜25形成在第一金属二硫族化物膜15上。源/漏电极35形成在第二金属二硫族化物膜25中。在本揭示中使用的源/漏电极35用于设计为源电极或漏电极。介电层40覆盖在第二金属二硫族化物膜25、源/漏电极35和基板10上方。栅电极45形成在介电层40的顶部上。
在一些实施方式中,基板10包括绝缘体,诸如氧化硅或氧化铝基板。在一些实施方式中,合适的氧化硅基板包含硅上二氧化硅。在某些实施方式中,硅基板是导电基板,诸如p型掺杂的硅。在其他实施方式中,合适的氧化铝基板包括蓝宝石。
在一些实施方式中,第一金属二硫族化物膜15和第二金属二硫族化物膜25的厚度为约0.5nm至约10nm。在一些实施方式中,第一金属二硫族化物膜15和第二金属二硫族化物膜25是彼此包含不同组成的过渡金属二硫族化物膜,组成选自以下项组成的群组:MoS2、WS2、MoSe2、WSe2、MoTe2和WTe2。在一些实施方式中,通过化学气相沉积形成第一金属二硫族化物膜15或第二金属二硫族化物膜25。在其他实施方式中,在基板10上形成金属膜,随后金属膜与除氧之外的硫族元素反应以形成第一金属二硫族化物膜15或第二金属二硫族化物膜25。
源/漏电极35和栅电极45可以由包括多晶硅、石墨烯和金属的任何合适的导电材料形成。源/漏电极35可以通过化学气相沉积、原子层沉积(atomic layer deposition,ALD)、物理气相沉积(physical vapor deposition,PVD)(溅射)、电镀或其他合适的方法形成。
在一些实施方式中,介电层40是氧化硅,诸如二氧化硅。在其他实施方式中,介电层40是一层或更多层氮化硅或高介电常数介电层。介电层40可以通过化学气相沉积、原子层沉积或任何合适的方法形成。在一些实施方式中,介电层40的厚度在约1nm至约10nm的范围内。
在一些实施方式中,源/漏电极35形成在第二金属二硫族化物膜25中的凹陷20(诸如接触窗开口)中。使用光刻和蚀刻操作在第二金属二硫族化物膜25中形成凹陷20。因为2D金属硫族化物膜非常薄(例如为单层),所以使用逐层蚀刻操作来蚀刻2D膜。
将由本文阐述金属二硫族化物膜的形成和金属二硫族化物蚀刻损伤的修复。为了形成金属二硫族化物膜,在本揭示的一些实施方式中,通过使用射频溅射(rapidfrequency sputtering,RF sputtering)系统将具有不同厚度的金属膜沉积在基板10上。随后将金属膜转变成金属二硫族化物膜。例如,在一些实施方式中,通过在约5×10-2托至约5×10-4托的背景压力下使用约10sccm至约100sccm的Ar气流以约10至约100W的功率溅射,来将金属(如钼)沉积在基板(如蓝宝石)上。金属沉积后,将样品置于热炉的中心进行硫族元素化(chalcogenization),诸如硫化。在硫化过程中,使用流率为约40sccm至约200sccm的Ar气体作为载气,并且炉压在约0.1托至约10托的范围内。样品的硫化温度为约400℃至约1200℃。在炉上游将约0.5g至约2g的S粉末在气流中加热至其约120℃至约200℃的蒸发温度。在一些实施方式中,再硫化操作以与硫化相同的方式进行(例如,相同的温度、压力、气体流量等)。
在一个特定实施方式中,通过在约5×10-3托的背景压力下使用约40sccm的Ar气流以约40W的功率溅射,在蓝宝石基板上沉积钼。硫化操作在约800℃的炉中以约130sccm的Ar流率和约0.7托的炉压进行。将S粉末(约1.5g)放置在炉上游的气流中,并加热至其约120℃的蒸发温度。使用相同的硫化程序制备具有0.5nm和1.0nm不同Mo膜厚度的两个样品。通过使用此种生长技术可以在蓝宝石基板上获得大面积的MoS2膜。
在一些实施方式中,代替用于形成S基材料(MoS2、WS2等)的硫化操作或逆转蚀刻损伤的再硫化;进行硒化或再硒化以分别形成或修复Se基材料,诸如MoSe2和WSe2;或者进行碲化或再碲化以分别形成或修复Te基材料,诸如MoTe2和WTe2。根据需要调节硫族元素化或再硫族元素化操作的参数(例如温度、压力),以用于硒基或碲基材料。
在一些实施方式中,执行对2D材料的逐层蚀刻以避免损伤2D材料的未蚀刻部分。通过将低功率氧等离子施加到2D材料,随后进行再硫族元素化操作来进行逐层蚀刻。然而,仍然会发生对未蚀刻部分的某种损伤。
为了证明对金属硫族化物膜进行逐层蚀刻的可行性,在某些实施方式中,通过硫化在蓝宝石基板上所沉积的Mo膜来生长2层MoS2样品。样品的剖面高分辨透射电子显微镜法(high resolution transmission electron microscopy,HRTEM)显示形成了双层MoS2。在双层MoS2样品上进行20W低功率氧等离子处理5秒和10秒,并且在每次等离子处理后记录拉曼光谱图。如图2的拉曼光谱图所示,在20W低功率氧等离子处理5秒后,对于5秒氧等离子处理后的样品未观察到Δk差,此表明没有MoS2被从双层MoS2膜蚀刻掉。在另一方面,对于使用10秒氧等离子处理的样品,Δk值从22.2cm-1降低到20.9cm-1。结果表明使用10秒氧等离子处理的样品的层数减少,亦即移除(蚀刻掉)一个层。然而,如图2所示,氧等离子处理后的两个样品的拉曼强度降低,此表明部分MoS2转变为Mo氧化物。对于使用10秒氧等离子处理的样品,尽管一MoS2层明显被蚀刻掉,但剩余的MoS2的部分可能转化成Mo氧化物。
为了将Mo氧化物转化回MoS2,在本揭示的一些实施方式中进行对Mo氧化物的再硫化。若由氧等离子造成的损伤是MoS2的氧化,则根据本揭示的实施方式,可以通过再硫化操作来逆转或修复损伤。
使用5秒和10秒氧等离子处理、随后是硫化程序的样品的拉曼光谱如图3所示。如图3所示,对于使用5秒等离子处理的样品,在再硫化程序之后观察到了与未处理样品相似的拉曼光谱。结果表明,再硫化后,部分Mo氧化物被转化回MoS2。因此,在再硫化程序之后,对于5秒等离子样品将观察到与未蚀刻样品相同的拉曼光谱。然而,对于10秒等离子处理样品,拉曼光谱的较低Δk值指示对于此样品仍然观察到了减少的层数。样品的剖面高分辨透射电子显微镜法图像显示在10秒等离子处理样品的蓝宝石基板上仅留下1层MoS2。
通过对未处理的样品(无氧等离子处理)、10秒氧等离子处理后的样品、以及再硫化程序后的相同样品进行X射线光电子能谱(x-ray photoelectron spectroscopy,XPS)来展示氧等离子蚀刻损伤的逆转。XPS曲线如图4所示。如图4所示,Mo6+3d3/2峰仅在10秒氧等离子处理后的样品观察到。由于该峰表示Mo氧化物的出现,所以再硫化后的样品和未经历氧等离子处理的样品的相似XPS曲线表明氧等离子处理将部分剩余的MoS2转变为Mo氧化物。基于此等结果,并且不希望被任何理论所束缚,所以看来蚀刻过程是一个自限制的过程。第一MoS2层的蚀刻速度比第二MoS2层快。在蚀刻掉第一层之后,第二层或第三层MoS2倾向于被氧化而不是被蚀刻掉。然而,在再硫化程序之后,Mo6+3d3/2峰消失,此指示Mo氧化物转变回MoS2。因此,作为再硫化操作的结果,在MoS2样品上基本上不含Mo氧化物。换言之,没有诸如通过XPS侦测到Mo氧化物。因此,MoS2膜的单层蚀刻和修复操作(再硫化)可以施加至剩余的MoS2以恢复其材料特性。
根据本揭示,光致发光(phtoluminescence,PL)光谱提供对MoS2的逐层蚀刻的进一步支持。使用5秒和10秒氧等离子处理、随后是再硫化程序的样品的PL光谱如图5所示。与未处理的样品(无氧等离子处理)相比,对于使用5秒等离子处理的样品未观察到明显的PL强度变化。然而,对于具有10秒等离子处理的样品观察到了大的PL强度变化。减少MoS2层数将使材料从II型材料改变为I型材料,并且PL强度将随着层数的减少而显著增加。PL光谱结果与10秒氧等离子处理后的先前观察一致,MoS2膜的层数从2变为1。
关于MoS2的逐层(分层)蚀刻和随后的再硫化的另一个问题是在每个蚀刻制程之后是否可以获得类似的载流子传输特性。3层MoS2样品的制备,系通过使用本文所揭示的相同生长方法硫化沉积Mo膜。将Au/Ti电极沉积在没有等离子处理的膜上、一次氧等离子蚀刻/再硫化程序的膜上以及两次氧等离子蚀刻/再硫化程序的膜上,并量测电流-电压特性,如图6所示。如图6所示,5.0V时的三个样品的电流分别为1.3×10-9、9.5×10-10和4.3×10- 10A。电流值与预期的MoS2层数3(未处理)、2(蚀刻和再硫化一次)和1(蚀刻和再硫化两次)成正比。结果表明,蚀刻和修复(再硫化)程序适用于金属二硫族化物的分层和选择性蚀刻的应用中。
图7A至图11B中揭示根据本揭示的一个实施方式的形成半导体元件100的方法。图7A至图11B的制造流程描述了通过使用根据本揭示的一些实施方式的氧等离子蚀刻/再硫化操作来形成图1A和图1B所示的顶栅异质结构晶体管半导体元件100的操作。
如图7A和图7B所示,金属二硫族化物异质结构包括形成在基板10上的第一金属二硫族化物膜15和形成在第一金属二硫族化物膜15上的第二金属二硫族化物膜25。图7A是平面图,而图7B是沿着图7A的线B-B的剖面图。在一些实施方式中通过化学气相沉积形成第一金属二硫族化物膜15和第二金属二硫族化物膜25。在其他实施方式中,通过物理气相沉积(溅射)或原子层沉积形成第一金属膜,随后通过将金属膜与硫族元素反应来将第一金属膜转变为第一金属二硫族化物膜15。在一些实施方式中随后通过以下步骤在第一金属二硫族化物膜15上方形成第二金属二硫族化物膜25:通过物理气相沉积(溅射)或原子层沉积形成第二金属膜,随后通过使第二金属膜与硫族元素反应来将第二金属膜转变成第二金属二硫族化物膜25。在一些实施方式中,第一金属二硫族化物膜15和第二金属二硫族化物膜25各自具有约0.5nm至约10nm的厚度。在某些实施方式中,第一金属二硫族化物膜15和第二金属二硫族化物膜25中的一者或两者是单层膜。在一些实施方式中,第一金属二硫族化物和第二金属二硫族化物是不同的过渡金属二硫族化物。在一些实施方式中,过渡金属二硫族化物选自由以下项组成的群组:MoS2、WS2、MoSe2、WSe2、MoTe2和WTe2。在某些实施方式中,提供了包括形成在蓝宝石基板上的MoS2膜和形成在MoS2膜上的WS2膜的WS2/MoS2异质结构。
在一些实施方式中,除了金属氧化物膜之外的金属二硫族化物膜直接形成在元件基板10上,而在其他实施方式中,金属二硫族化物膜形成在另一基板上,随后转移到元件基板10上。例如,在第一基板上形成除了厚度为约0.5nm至约10nm的的第一金属二硫族化物膜15(不包含金属氧化物膜)。在一些实施方式中,通过化学气相沉积形成第一金属二硫族化物膜15。在其他实施方式中,通过溅射或原子层沉积形成第一金属膜,随后通过将金属膜与除了氧之外的硫族元素反应来将此金属膜转变为第一金属二硫族化物膜15。随后在第一金属二硫族化物膜15上形成厚度在约100nm至约5μm的范围内的聚合物膜。在一些实施方式中,聚合物膜是聚(甲基丙烯酸甲酯)(methyl methacrylate,PMMA)。在形成聚合物膜之后,例如通过将样品放置在加热板上来加热样品。样品可以在约70℃至约200℃的温度下加热约30秒至约20分钟。加热之后,例如通过使用镊子将第一金属二硫族化物膜15的角部从基板上剥离,并将样品浸没在溶液中以促进第一金属二硫族化物膜15与第一基板的分离。在一些实施方式中,溶液是碱性水溶液。将第一金属二硫族化物膜和聚合物膜转移到第二基板上。在一些实施方式中,在将第一金属二硫族化物膜15施加到第二基板之后,可以将样品静置30分钟至24小时。在一些实施方式中,第二基板包括氧化硅或氧化铝基板。在一些实施方式中,合适的氧化硅基板包括在硅层上形成的二氧化硅层。在其他实施方式中,合适的氧化铝基板包括蓝宝石。使用合适的溶剂从第一金属二硫族化物膜15移除聚合物膜。在一些实施方式中,将第二基板/第一金属二硫族化物膜15/聚合物膜结构浸没在合适的溶剂中,直到聚合物膜溶解。可以使用适于溶解聚合物膜的任何溶剂。例如,在一些实施方式中,当聚合物膜是甲基丙烯酸甲酯膜时,使用丙酮作为溶剂。在一些实施方式中,第一金属二硫族化物膜15和第二基板随后通过在约200℃至约500℃的温度下的烘箱中加热约30分钟至约5小时进行退火,以将转移的第一金属二硫族化物膜15提供在第二基板上。
在一个实施方式中,2D金属硫化物晶体膜的膜转移操作如下进行:(1)将1.5μm厚的PMMA层旋涂到2D金属硫化物晶体膜上;(2)将样品在120℃的加热板上加热5分钟;(3)将PMMA/2D晶体膜的角部处的一小部分用镊子从蓝宝石基板上剥离下来;(4)将样品浸没在KOH溶液中,并将PMMA/2D晶体膜完全剥离;(5)将PMMA/2D晶体膜放置在300nm的SiO2/Si基板上;(6)将样品在大气条件下静置8小时;(7)将样品浸没在丙酮中以移除PMMA;以及(8)将样品在350℃的炉中退火2小时,以留下保留在SiO2/Si基板的表面上的2D金属硫化物晶体膜。
通过使用光刻和蚀刻操作,第一金属二硫族化物膜15和第二金属二硫族化物膜25被图案化以形成沟道区域50,如图8A和图8B所示。图8A是平面图,而图8B是沿着图8A的线C-C的剖面图。光刻和蚀刻操作使围绕图案化的第一金属二硫族化物膜15和第二金属二硫族化物膜25的基板10暴露。
通过使用本揭示的氧等离子蚀刻操作,在第二金属二硫族化物膜25中形成凹陷20,从而暴露出第一金属二硫族化物膜15,如图9A和图9B所示。图9A是平面图,而图9B是沿着图9A的线D-D的剖面图。在一些实施方式中,氧等离子的功率在约20W至约60W的范围内,并且蚀刻时间在约5秒至约60秒的范围内。在一些实施方式中,在等离子蚀刻期间使用其他等离子替代氧等离子,包括氢、氩或反应性离子蚀刻(reactive ion etch,RIE)蚀刻气体。
在进行蚀刻操作以形成凹陷20之后,如本揭示所述进行再硫族元素化。将第一金属二硫族化物膜15和第二金属二硫族化物膜25的剩余蚀刻部分暴露于硫族元素30(诸如硫、硒或碲蒸气),以修复对剩余的第一金属二硫族化物膜15以及剩余的第二金属二硫族化物膜25(若存在对第二金属二硫族化物膜25的任何损伤的话)的损伤,如图10所示。在一些实施方式中,将元件放置在减压炉中,并且硫族元素30通过加热而蒸发。使用惰性载气将蒸发的硫族元素30施加到元件上。
再硫族元素化操作将通过蚀刻操作在第一金属二硫族化物膜15或第二金属二硫族化物膜25中形成的实质上所有金属氧化物分别转换回第一金属二硫族化物膜15或第二金属二硫族化物膜25。作为本揭示的再硫族元素化操作的结果,在第一金属二硫族化物膜15或第二金属二硫族化物膜25上实质上不存在第一金属或第二金属的氧化物。实质上没有第一金属或第二金属的氧化物意谓未由适当的侦测手段(诸如由X射线光电子能谱)侦测到第一或第二金属氧化物。
在一些实施方式中,硫族元素30是硫,并且在硫化过程中,使用流率为约40sccm至约200sccm的Ar气体作为载气,并且炉压在约0.1托至约10托的范围内。样品的再硫化温度为约400℃至约1200℃。在炉上游将约0.5g至约2g的S粉末在气流中加热至其约120℃至约200℃的蒸发温度。
如图11A和图11B所示,在凹陷20中的暴露的MoS2层上沉积导电层,以形成源/漏电极35。图11A是平面图,而图11B是沿着图11A的线E-E的剖面图。源/漏电极35可以由任何合适的导电材料形成,包括多晶硅、石墨烯以及金属,包括一层或更多层铝、铜、钛、钽、钨、钴、钼、镍、锰、银、钯、铼、铱、钌、铂、锆、氮化钽、硅化镍、硅化钴、TiN、WN、TiAl、TiAlN、TaCN、TaC、TaSiN、金属合金、其他合适的材料,及/或其组合。在一些实施方式中,石墨烯用作2D材料的欧姆接触材料。源/漏电极35可以通过化学气相沉积、原子层沉积、物理气相沉积(溅射)、电镀或其他合适的方法形成。
如图1A和图1B所示,随后在源/漏电极35、第二金属二硫族化物膜25、第一金属二硫族化物膜15和基板10上方形成介电层40。随后在介电层40上方形成导电层以形成栅电极45,从而形成顶栅异质结构晶体管半导体元件100。因此,在一些实施方式中,可以在不使用金属二硫族化物膜转移操作的情况下制造2D异质结构晶体管。
在一些实施方式中,介电层40是氧化硅,诸如二氧化硅。在其他实施方式中,介电层40是一层或更多层氮化硅或高介电常数介电层。高介电常数介电材料的实例包括HfO2、HfSiO、HfSiON、HfTaO、HfTiO、HfZrO、氧化锆、氧化铝、氧化钛、二氧化铪-氧化铝(HfO2-Al2O3)合金、其他合适的高介电常数介电材料,及/或其组合。介电层40可以通过化学气相沉积、原子层沉积或任何合适的方法形成。在一些实施方式中,介电层40的厚度在约1nm至约10nm的范围内。
栅电极45可以由任何合适的导电材料形成,包括多晶硅、石墨烯以及金属,包括一层或更多层铝、铜、钛、钽、钨、钴、钼、镍、锰、银、钯、铼、铱、钌、铂、锆、氮化钽、硅化镍、硅化钴、TiN、WN、TiAl、TiAlN、TaCN、TaC、TaSiN、金属合金、其他合适的材料,及/或其组合。栅电极45可以通过化学气相沉积、原子层沉积、物理气相沉积(溅射)、电镀或其他合适的方法形成。
作为根据本揭示的制造半导体元件100的方法的结果,在源/漏电极35和第一金属二硫族化物膜15之间的介面处实质上不存在第一金属的氧化物。实质上没有第一金属的氧化物意谓未由适当的侦测手段(诸如由X射线光电子能谱)侦测到第一金属氧化物。
根据本揭示形成的2D晶体异质结构半导体元件100提供改良的电气效能。根据本文揭示的方法制备具有5层MoS2结构或4层WS2/5层MoS2异质结构的底栅晶体管作为沟道。VDS=10V时的5层MoS2沟道和4层WS2/5层MoS2异质结构沟道晶体管的比较ID-VGS曲线如图12所示。与MoS2晶体管相比,观察到了异质结构元件的显著漏极电流增加。自曲线提取的具有MoS2和WS2/MoS2异质结构作为沟道的两个元件的场效应迁移率值分别为0.27cm2/V·s和0.69cm2/V·s。II型带对准在WS2/MoS2异质结构中发生,从而导致从WS2到MoS2的电子注入。
在一些实施方式中,分层蚀刻包括同时的双层或三层蚀刻。
在一些实施方式中,本文所述的蚀刻/再硫化技术适用于对2D晶体异质结构的选择性蚀刻,2D晶体异质结构为诸如MoS2、WS2、MoSe2、WSe2、WTe2和MoTe2的不同材料的组合。此外,在一些实施方式中,本文所述的低功率氧等离子蚀刻技术用于蚀刻石墨烯触点。
应当理解,半导体元件经历进一步的制造制程以形成各种特征,诸如触点/通孔、互连金属层、介电层、钝化层等。在半导体元件上执行的额外操作可以包括光刻、蚀刻、化学机械研磨、热处理(包括快速热退火)、沉积、掺杂(包括离子植布、光致抗蚀剂灰化以及液体溶剂清洗)。
通过使用本揭示的氧等离子蚀刻和愈合(再硫化)操作,可以在不使用膜转移操作的情况下制造WS2/MoS2异质结构晶体管。本揭示亦提供了单层膜的逐层蚀刻技术和修复蚀刻期间对单层膜的损伤的方法。因此,本揭示提供了2D半导体元件的改良产率。
应当理解,并不是所有的优点都必须在本文中论述,对于所有的实施方式或实例而言不要求特别的优点,并且其他实施方式或实例可以提供不同的优点。
本揭示的一个实施方式是一种制造半导体元件的方法,包括通过将等离子施加到多个金属二硫族化物膜,来等离子蚀刻设置在基板上的多个金属二硫族化物膜的一部分,此多个金属二硫族化物膜包含金属和硫族元素的化合物。在等离子蚀刻之后,将硫族元素施加到多个金属二硫族化物膜的剩余部分,以修复等离子蚀刻对多个金属二硫族化物膜的剩余部分的损伤。所述硫族元素是S、Se或Te。在一个实施方式中,等离子选自由以下项组成的组:氧、氩、氢和反应性离子蚀刻气体。在一个实施方式中,金属二硫族化物膜包含选自由以下项组成的组的金属二硫族化物:WS2、MoS2、WSe2、MoSe2、WTe2和MoTe2。在一个实施方式中,基板包含硅、氧化硅或氧化铝。在一个实施方式中,等离子功率在约20W至约60W的范围内,并且蚀刻时间在约5秒至约60秒的范围内。在一个实施方式中,将硫族元素施加到多个金属二硫族化物膜的剩余部分是将蒸发的硫施加到多个金属二硫族化物膜的剩余部分的再硫化操作。在一个实施方式中,金属二硫族化物膜的厚度为约0.5nm至约10nm。在一个实施方式中,在等离子蚀刻之前,在基板上形成包含第一金属二硫族化物的第一金属二硫族化物膜;以及在第一金属二硫族化物膜上形成包含第二金属二硫族化物的第二金属二硫族化物膜,以形成多个金属二硫族化物膜,其中第一金属二硫族化物和第二金属二硫族化物组成不同。在一个实施方式中,等离子蚀刻移除了第二金属二硫族化物膜的一部分,从而暴露了第一金属二硫族化物膜的一部分。在一个实施方式中,等离子是氧等离子,硫族元素是硫,并且向多个金属二硫族化物层的剩余部分施加额外量的硫族元素将在等离子蚀刻期间形成的金属氧化物转化为金属硫化物。
本揭示的另一个实施方式是一种制造半导体元件的方法,包括在基板上形成包含第一金属与第一硫族元素的化合物的第一金属二硫族化物膜,以及在第一金属二硫族化物膜上形成包含第二金属与第二硫族元素的化合物的第二金属二硫族化物膜。图案化第一金属二硫族化物膜和第二金属二硫族化物膜以形成包括第一金属二硫族化物膜和第二金属二硫族化物膜的沟道区域。选择性地蚀刻沟道区域的间隔开部分以移除第二金属二硫族化物膜的部分,从而暴露第一金属二硫族化物膜的部分。向第一金属二硫族化物膜的至少暴露部分施加额外量的第一硫族元素。将第一导电层沉积在第一金属二硫族化物膜的暴露部分上。将介电层沉积在第二金属二硫族化物膜和第一导电层上方,并在介电层上方形成第二导电层。第一和第二硫族元素是S、Se或Te。在一个实施方式中,蚀刻是使用等离子的等离子蚀刻,并且等离子选自由以下项组成的组:氧、氩、氢和反应性离子蚀刻气体。在一个实施方式中,等离子的功率在约20W至约60W的范围内,并且蚀刻时间在约5秒至约60秒的范围内。在一个实施方式中,等离子是氧等离子,硫族元素是硫,并且向至少第一金属二硫族化物膜施加额外量的第一硫族元素将在等离子蚀刻期间形成的金属氧化物转化为金属硫化物。在一个实施方式中,第一和第二金属二硫族化物选自由以下项组成的组:WS2、MoS2、WSe2、MoSe2、WTe2和MoTe2。在一个实施方式中,基板包含硅、氧化硅或氧化铝。在一个实施方式中,向至少第一金属二硫族化物膜施加额外量的第一硫族元素是将蒸发的硫族元素施加到第一金属二硫族化物膜的再硫族元素化操作。在一个实施方式中,第一和第二金属二硫族化物层的厚度为约0.5nm至约10nm。
本揭示的另一个实施方式是一种半导体元件,此半导体元件包括第一金属二硫族化物单层和第二金属二硫族化物单层,设置在基板上的第一金属二硫族化物单层包含第一金属和第一硫族元素的化合物,并且设置在第一金属二硫族化物单层上的第二金属二硫族化物单层包括第二金属和第二硫族元素。源电极和漏电极设置在第一金属二硫族化物单层上,在第二金属二硫族化物单层的相对侧上。介电层设置在第二金属二硫族化物单层以及源电极和漏电极上。栅电极设置在与第二金属二硫族化物单层对准的介电层上。第一金属二硫族化物单层和第二金属二硫族化物单层包含不同的金属二硫族化物。第一和第二硫族元素是S、Se或Te。实质上没有第一金属的氧化物存在于源电极和漏电极与第一金属二硫族化物单层之间的介面处。在一个实施方式中,基板包括蓝宝石,第一金属二硫族化物包括MoS2、MoSe2或MoTe2,而第二金属二硫族化物包括WS2、WSe2或WTe2。
上文概述了若干实施方式或实例的特征,使得本领域的技艺人士可以更好地理解本揭示内容的各态样。本领域的技艺人士应当理解,他们可以容易地将本揭示内容用作设计或修改用于执行本文介绍的实施方式或实例的相同目的和/或实现相同优点的其他制程和结构的基础。本领域的技艺人士亦应此意识到,此类等效的结构不脱离本揭示案的精神和范畴,并且在不脱离本揭示案的精神和范畴的情况下,本领域的技艺人士可以在此进行各种改变、替换和变更。
Claims (1)
1.一种半导体元件制造方法,其特征在于,包括:
通过将一等离子施加到多个金属二硫族化物膜,来等离子蚀刻设置在一基板上的所述多个金属二硫族化物膜的一部分,所述多个金属二硫族化物膜包含一金属和一硫族元素的一化合物;以及
在该等离子蚀刻之后,将一额外量的该硫族元素施加到所述多个金属二硫族化物膜的多个剩余部分,以修复该等离子蚀刻对所述多个金属二硫族化物膜的所述多个剩余部分的损伤,
其中该硫族元素是S、Se或Te。
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