CN108630281B - 半导体存储装置 - Google Patents

半导体存储装置 Download PDF

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Publication number
CN108630281B
CN108630281B CN201710712653.6A CN201710712653A CN108630281B CN 108630281 B CN108630281 B CN 108630281B CN 201710712653 A CN201710712653 A CN 201710712653A CN 108630281 B CN108630281 B CN 108630281B
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CN
China
Prior art keywords
temperature
voltage
signal
semiconductor memory
memory device
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Expired - Fee Related
Application number
CN201710712653.6A
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English (en)
Chinese (zh)
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CN108630281A (zh
Inventor
细谷昌弘
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Kioxia Corp
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Kioxia Corp
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Publication of CN108630281A publication Critical patent/CN108630281A/zh
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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/10—Programming or data input circuits
    • G11C16/102—External programming circuits, e.g. EPROM programmers; In-circuit programming or reprogramming; EPROM emulators
    • G11C16/105—Circuits or methods for updating contents of nonvolatile memory, especially with 'security' features to ensure reliable replacement, i.e. preventing that old data is lost before new data is reliably written
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
    • G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
    • G11C11/5621—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge storage in a floating gate
    • G11C11/5642—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/26—Sensing or reading circuits; Data output circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/30—Power supply circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/32—Timing circuits
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3404—Convergence or correction of memory cell threshold voltages; Repair or recovery of overerased or overprogrammed cells
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/06—Auxiliary circuits, e.g. for writing into memory
    • G11C16/34—Determination of programming status, e.g. threshold voltage, overprogramming or underprogramming, retention
    • G11C16/3418—Disturbance prevention or evaluation; Refreshing of disturbed memory data
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C7/00—Arrangements for writing information into, or reading information out from, a digital store
    • G11C7/04—Arrangements for writing information into, or reading information out from, a digital store with means for avoiding disturbances due to temperature effects

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Computer Security & Cryptography (AREA)
  • Computer Hardware Design (AREA)
  • Read Only Memory (AREA)
  • Analogue/Digital Conversion (AREA)
CN201710712653.6A 2017-03-21 2017-08-18 半导体存储装置 Expired - Fee Related CN108630281B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017054925A JP6779816B2 (ja) 2017-03-21 2017-03-21 半導体記憶装置
JP2017-054925 2017-03-21

Publications (2)

Publication Number Publication Date
CN108630281A CN108630281A (zh) 2018-10-09
CN108630281B true CN108630281B (zh) 2022-03-18

Family

ID=63583543

Family Applications (1)

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CN201710712653.6A Expired - Fee Related CN108630281B (zh) 2017-03-21 2017-08-18 半导体存储装置

Country Status (4)

Country Link
US (1) US10242745B2 (enExample)
JP (1) JP6779816B2 (enExample)
CN (1) CN108630281B (enExample)
TW (1) TWI642061B (enExample)

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7214464B2 (ja) * 2018-12-20 2023-01-30 キオクシア株式会社 半導体記憶装置
US11320322B2 (en) * 2019-04-09 2022-05-03 Winbond Electronics Corp. Temperature sensor evaluation method
JP2022035175A (ja) 2020-08-20 2022-03-04 キオクシア株式会社 半導体記憶装置
JP2022038392A (ja) * 2020-08-26 2022-03-10 キオクシア株式会社 半導体記憶装置及び半導体記憶装置におけるコマンド処理方法
JP2022045789A (ja) 2020-09-09 2022-03-22 キオクシア株式会社 半導体記憶装置

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1459798A (zh) * 2002-05-22 2003-12-03 三菱电机株式会社 需要刷新工作的半导体存储器
KR20070036642A (ko) * 2005-09-29 2007-04-03 주식회사 하이닉스반도체 온도 보상된 셀프리프레쉬 주기를 위한 메모리 장치
CN101154438A (zh) * 2006-09-28 2008-04-02 海力士半导体有限公司 晶片上热传感器
CN101796589A (zh) * 2007-09-07 2010-08-04 美光科技公司 用于移除系统影响的存储器控制器自校准

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US6967877B2 (en) * 2003-09-09 2005-11-22 Taiwan Semiconductor Manufacturing Co., Ltd. Temperature detecting circuit for controlling a self-refresh period of a semiconductor memory device
US7180211B2 (en) * 2003-09-22 2007-02-20 Micro Technology, Inc. Temperature sensor
KR100611775B1 (ko) * 2003-12-29 2006-08-10 주식회사 하이닉스반도체 온도변화에 따라 최적의 리프레쉬 주기를 가지는 반도체메모리 장치
KR100733427B1 (ko) * 2004-02-19 2007-06-29 주식회사 하이닉스반도체 아날로그-디지털 변환기
US7413343B2 (en) * 2005-09-16 2008-08-19 Kyocera Wireless Corp. Apparatus for determining a temperature sensing element
KR100675293B1 (ko) * 2005-10-17 2007-01-29 삼성전자주식회사 온도 감지 회로
KR100816690B1 (ko) * 2006-04-13 2008-03-27 주식회사 하이닉스반도체 온도 감지장치를 구비하는 반도체메모리소자
KR100766379B1 (ko) * 2006-08-11 2007-10-12 주식회사 하이닉스반도체 반도체 메모리 장치의 온도 감지 회로
KR100806609B1 (ko) * 2006-11-02 2008-02-25 주식회사 하이닉스반도체 반도체 메모리 소자의 온도 정보 출력장치
ITRM20060652A1 (it) * 2006-12-06 2008-06-07 Micron Technology Inc Compensazione di temperatura di segnali di memoria impiegando segnali digitali
KR100983700B1 (ko) * 2008-04-18 2010-09-24 주식회사 하이닉스반도체 Ｒｆｉｄ 장치
KR101541706B1 (ko) * 2009-01-19 2015-08-05 삼성전자주식회사 온도 감지 발진 회로 및 이를 포함하는 반도체 메모리 장치
JP2012023499A (ja) * 2010-07-13 2012-02-02 Panasonic Corp Ａｄ変換器を備えた温度検知回路及び半導体集積回路
JP5729544B2 (ja) * 2011-02-03 2015-06-03 セイコーエプソン株式会社 温度検出回路
US8472274B2 (en) 2011-03-02 2013-06-25 Apple Inc. Using temperature sensors with a memory device
JP5542737B2 (ja) 2011-05-12 2014-07-09 株式会社東芝 不揮発性半導体記憶装置
KR20160121204A (ko) * 2015-04-10 2016-10-19 에스케이하이닉스 주식회사 집적 회로
JP6784020B2 (ja) * 2015-12-03 2020-11-11 セイコーエプソン株式会社 回路装置、発振器、電子機器及び移動体
JP6736871B2 (ja) * 2015-12-03 2020-08-05 セイコーエプソン株式会社 回路装置、発振器、電子機器及び移動体
JP6750211B2 (ja) * 2015-12-03 2020-09-02 セイコーエプソン株式会社 回路装置、発振器、電子機器及び移動体

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1459798A (zh) * 2002-05-22 2003-12-03 三菱电机株式会社 需要刷新工作的半导体存储器
KR20070036642A (ko) * 2005-09-29 2007-04-03 주식회사 하이닉스반도체 온도 보상된 셀프리프레쉬 주기를 위한 메모리 장치
CN101154438A (zh) * 2006-09-28 2008-04-02 海力士半导体有限公司 晶片上热传感器
CN101796589A (zh) * 2007-09-07 2010-08-04 美光科技公司 用于移除系统影响的存储器控制器自校准

Also Published As

Publication number Publication date
JP2018156718A (ja) 2018-10-04
US10242745B2 (en) 2019-03-26
CN108630281A (zh) 2018-10-09
TWI642061B (zh) 2018-11-21
TW201835902A (zh) 2018-10-01
US20180277223A1 (en) 2018-09-27
JP6779816B2 (ja) 2020-11-04

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Granted publication date: 20220318