CN108603288B - 生产氧化铝和/或氮化铝的方法 - Google Patents

生产氧化铝和/或氮化铝的方法 Download PDF

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Publication number
CN108603288B
CN108603288B CN201680067039.2A CN201680067039A CN108603288B CN 108603288 B CN108603288 B CN 108603288B CN 201680067039 A CN201680067039 A CN 201680067039A CN 108603288 B CN108603288 B CN 108603288B
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aluminum
aluminium
layer
substrate
base layer
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Chinese (zh)
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CN108603288A (zh
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朱利安·维蒂耶洛
让-卢奇·德尔卡里
法比安·皮亚拉
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Kobus SAS
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Kobus SAS
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/56—After-treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58—After-treatment
    • C23C14/5846—Reactive treatment
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
    • C23C16/08—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metal halides
    • C23C16/12—Deposition of aluminium only
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time
    • C23C16/45525—Atomic layer deposition [ALD]
    • C23C16/45527—Atomic layer deposition [ALD] characterized by the ALD cycle, e.g. different flows or temperatures during half-reactions, unusual pulsing sequence, use of precursor mixtures or auxiliary reactants or activations

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  • Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Vapour Deposition (AREA)
  • Formation Of Insulating Films (AREA)
  • Physical Vapour Deposition (AREA)
CN201680067039.2A 2015-11-16 2016-11-15 生产氧化铝和/或氮化铝的方法 Active CN108603288B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
FR1560933A FR3043699B1 (fr) 2015-11-16 2015-11-16 Procede de formation d'oxyde et/ou de nitrure d'aluminium et dispositif pour la mise en oeuvre d'un tel procede
FR1560933 2015-11-16
PCT/FR2016/052956 WO2017085392A1 (fr) 2015-11-16 2016-11-15 Procede de formation d'oxyde et/ou de nitrure d'aluminium

Publications (2)

Publication Number Publication Date
CN108603288A CN108603288A (zh) 2018-09-28
CN108603288B true CN108603288B (zh) 2020-01-14

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CN201680067039.2A Active CN108603288B (zh) 2015-11-16 2016-11-15 生产氧化铝和/或氮化铝的方法

Country Status (6)

Country Link
US (1) US20180327907A1 (https=)
EP (1) EP3377672B1 (https=)
JP (1) JP6956099B2 (https=)
CN (1) CN108603288B (https=)
FR (1) FR3043699B1 (https=)
WO (1) WO2017085392A1 (https=)

Families Citing this family (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN110218362A (zh) * 2018-03-04 2019-09-10 盐城增材科技有限公司 一种石墨烯/氧化铝/氮化铝界面导热导电增强橡胶及其制备方法
KR102620219B1 (ko) * 2018-11-02 2024-01-02 삼성전자주식회사 기판 처리 방법 및 기판 처리 장치
CN111455351A (zh) * 2020-04-10 2020-07-28 厦门大学 一种氮化铝-氧化铝薄膜及其制备方法和应用
US20220320417A1 (en) * 2021-04-01 2022-10-06 Applied Materials, Inc. Method of manufacturing aluminum nitride films

Citations (5)

* Cited by examiner, † Cited by third party
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WO2004009861A3 (en) * 2002-07-19 2004-07-22 Asm Inc Method to form ultra high quality silicon-containing compound layers
CN102400091A (zh) * 2010-09-10 2012-04-04 鸿富锦精密工业（深圳）有限公司 铝合金的表面处理方法及由铝合金制得的壳体
CN102409293A (zh) * 2011-12-04 2012-04-11 中国航天科技集团公司第五研究院第五一〇研究所 一种氧化铝薄膜的制备方法
CN104561928A (zh) * 2014-12-24 2015-04-29 浙江大学 一种在玻璃基底上沉积二氧化硅薄膜的方法
CN104851796A (zh) * 2014-02-18 2015-08-19 朗姆研究公司 用于保形氮化铝的高增长速率的工艺

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JPH06101019A (ja) * 1992-09-18 1994-04-12 Fujitsu Ltd アルミナ膜形成方法
JP3781787B2 (ja) * 1993-10-26 2006-05-31 株式会社半導体エネルギー研究所 多目的基板処理装置およびその動作方法および薄膜集積回路の作製方法
JP4531145B2 (ja) * 1997-05-27 2010-08-25 株式会社アルバック 極薄絶縁膜形成方法
JP3708940B2 (ja) * 2003-10-27 2005-10-19 株式会社東芝 Ｃｖｄ装置の反応室のコーティング方法
US7595967B1 (en) * 2004-09-07 2009-09-29 Western Digital (Fremont), Llp Method for fabricating a spacer layer for a magnetoresistive element
JP2006086468A (ja) * 2004-09-17 2006-03-30 Canon Anelva Corp 磁気抵抗膜の製造方法及び製造装置
US7723205B2 (en) * 2005-09-27 2010-05-25 Semiconductor Energy Laboratory Co., Ltd Semiconductor device, manufacturing method thereof, liquid crystal display device, RFID tag, light emitting device, and electronic device
JP4680140B2 (ja) * 2006-07-14 2011-05-11 日本碍子株式会社 ＡｌＮ単結晶膜の形成方法
JP5304070B2 (ja) * 2007-10-25 2013-10-02 豊田合成株式会社 Ｉｉｉ族窒化物半導体層の製造装置、ｉｉｉ族窒化物半導体層の製造方法、及びｉｉｉ族窒化物半導体発光素子の製造方法
US8383439B2 (en) * 2007-10-25 2013-02-26 Showa Denko K.K. Apparatus for manufacturing group-III nitride semiconductor layer, method of manufacturing group-III nitride semiconductor layer, group-III nitride semiconductor light-emitting device, method of manufacturing group-III nitride semiconductor light-emitting device, and lamp
US20140124788A1 (en) * 2012-11-06 2014-05-08 Intermolecular, Inc. Chemical Vapor Deposition System

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* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2004009861A3 (en) * 2002-07-19 2004-07-22 Asm Inc Method to form ultra high quality silicon-containing compound layers
CN102400091A (zh) * 2010-09-10 2012-04-04 鸿富锦精密工业（深圳）有限公司 铝合金的表面处理方法及由铝合金制得的壳体
CN102409293A (zh) * 2011-12-04 2012-04-11 中国航天科技集团公司第五研究院第五一〇研究所 一种氧化铝薄膜的制备方法
CN104851796A (zh) * 2014-02-18 2015-08-19 朗姆研究公司 用于保形氮化铝的高增长速率的工艺
CN104561928A (zh) * 2014-12-24 2015-04-29 浙江大学 一种在玻璃基底上沉积二氧化硅薄膜的方法

Also Published As

Publication number Publication date
JP6956099B2 (ja) 2021-10-27
EP3377672A1 (fr) 2018-09-26
EP3377672B1 (fr) 2019-08-07
JP2018535329A (ja) 2018-11-29
CN108603288A (zh) 2018-09-28
US20180327907A1 (en) 2018-11-15
FR3043699B1 (fr) 2019-06-14
WO2017085392A1 (fr) 2017-05-26
FR3043699A1 (fr) 2017-05-19

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