CN108546986B - 籽晶保护装置及单晶生长方法 - Google Patents
籽晶保护装置及单晶生长方法 Download PDFInfo
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- CN108546986B CN108546986B CN201810358210.6A CN201810358210A CN108546986B CN 108546986 B CN108546986 B CN 108546986B CN 201810358210 A CN201810358210 A CN 201810358210A CN 108546986 B CN108546986 B CN 108546986B
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- seed crystal
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- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
-
- C—CHEMISTRY; METALLURGY
- C30—CRYSTAL GROWTH
- C30B—SINGLE-CRYSTAL GROWTH; UNIDIRECTIONAL SOLIDIFICATION OF EUTECTIC MATERIAL OR UNIDIRECTIONAL DEMIXING OF EUTECTOID MATERIAL; REFINING BY ZONE-MELTING OF MATERIAL; PRODUCTION OF A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; SINGLE CRYSTALS OR HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; AFTER-TREATMENT OF SINGLE CRYSTALS OR A HOMOGENEOUS POLYCRYSTALLINE MATERIAL WITH DEFINED STRUCTURE; APPARATUS THEREFOR
- C30B11/00—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method
- C30B11/14—Single-crystal growth by normal freezing or freezing under temperature gradient, e.g. Bridgman-Stockbarger method characterised by the seed, e.g. its crystallographic orientation
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- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Crystallography & Structural Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Crystals, And After-Treatments Of Crystals (AREA)
Abstract
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CN201810358210.6A CN108546986B (zh) | 2018-04-19 | 2018-04-19 | 籽晶保护装置及单晶生长方法 |
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CN201810358210.6A CN108546986B (zh) | 2018-04-19 | 2018-04-19 | 籽晶保护装置及单晶生长方法 |
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CN108546986A CN108546986A (zh) | 2018-09-18 |
CN108546986B true CN108546986B (zh) | 2020-09-15 |
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Families Citing this family (1)
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CN109161970B (zh) * | 2018-10-11 | 2021-04-06 | 哈尔滨工业大学 | 一种可视三温区硒化镓单晶生长装置及生长方法 |
Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2079493A5 (en) * | 1970-02-03 | 1971-11-12 | Radiotechnique Compelec | Seeded solution growth - of single crystal compound semiconductors |
US3796548A (en) * | 1971-09-13 | 1974-03-12 | Ibm | Boat structure in an apparatus for making semiconductor compound single crystals |
FR2315316A1 (fr) * | 1975-06-25 | 1977-01-21 | Radiotechnique Compelec | Creuset pour la fabrication d'un monocristal |
CN1844487A (zh) * | 2006-02-09 | 2006-10-11 | 尹庆民 | 水平三温区梯度凝固法生长砷化镓单晶的方法 |
CN2885891Y (zh) * | 2006-02-09 | 2007-04-04 | 姚荣华 | 生长砷化镓单晶的温控炉 |
CN101210346A (zh) * | 2006-12-30 | 2008-07-02 | 袁诗鑫 | 水平区熔生长碲锌镉单晶的装置和方法 |
CN203754848U (zh) * | 2013-12-04 | 2014-08-06 | 有研光电新材料有限责任公司 | 水平砷化镓单晶生长用籽晶腔及包括该籽晶腔的石英舟 |
CN104404615A (zh) * | 2014-12-16 | 2015-03-11 | 中国电子科技集团公司第四十六研究所 | 一种锑化镓单晶生长的平面结晶界面控制结构及使用方法 |
CN105002560A (zh) * | 2015-08-27 | 2015-10-28 | 中国电子科技集团公司第二十六研究所 | 近化学计量比铌酸锂晶体的组分可控定向结晶制备方法 |
CN105369345A (zh) * | 2015-12-03 | 2016-03-02 | 洛阳西格马炉业股份有限公司 | 一种用于制备蓝宝石单晶体的坩埚和制备方法 |
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2018
- 2018-04-19 CN CN201810358210.6A patent/CN108546986B/zh active Active
Patent Citations (10)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
FR2079493A5 (en) * | 1970-02-03 | 1971-11-12 | Radiotechnique Compelec | Seeded solution growth - of single crystal compound semiconductors |
US3796548A (en) * | 1971-09-13 | 1974-03-12 | Ibm | Boat structure in an apparatus for making semiconductor compound single crystals |
FR2315316A1 (fr) * | 1975-06-25 | 1977-01-21 | Radiotechnique Compelec | Creuset pour la fabrication d'un monocristal |
CN1844487A (zh) * | 2006-02-09 | 2006-10-11 | 尹庆民 | 水平三温区梯度凝固法生长砷化镓单晶的方法 |
CN2885891Y (zh) * | 2006-02-09 | 2007-04-04 | 姚荣华 | 生长砷化镓单晶的温控炉 |
CN101210346A (zh) * | 2006-12-30 | 2008-07-02 | 袁诗鑫 | 水平区熔生长碲锌镉单晶的装置和方法 |
CN203754848U (zh) * | 2013-12-04 | 2014-08-06 | 有研光电新材料有限责任公司 | 水平砷化镓单晶生长用籽晶腔及包括该籽晶腔的石英舟 |
CN104404615A (zh) * | 2014-12-16 | 2015-03-11 | 中国电子科技集团公司第四十六研究所 | 一种锑化镓单晶生长的平面结晶界面控制结构及使用方法 |
CN105002560A (zh) * | 2015-08-27 | 2015-10-28 | 中国电子科技集团公司第二十六研究所 | 近化学计量比铌酸锂晶体的组分可控定向结晶制备方法 |
CN105369345A (zh) * | 2015-12-03 | 2016-03-02 | 洛阳西格马炉业股份有限公司 | 一种用于制备蓝宝石单晶体的坩埚和制备方法 |
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Effective date of registration: 20210222 Address after: 226500 3rd floor, building 5, electronic information industrial park, No.2 Haiyang South Road, Chengnan street, Rugao City, Nantong City, Jiangsu Province Patentee after: Jiangsu Qinene New Materials Co.,Ltd. Address before: 100083 No. 35, Qinghua East Road, Beijing, Haidian District Patentee before: Institute of Semiconductors, Chinese Academy of Sciences Patentee before: University OF CHINESE ACADEMY OF SCIENCES |
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Effective date of registration: 20220307 Address after: 226500 2nd floor, building 3, electronic information industrial park, No. 2, Haiyang South Road, Chengnan street, Rugao City, Nantong City, Jiangsu Province Patentee after: Nantong Fudian semiconductor material technology Co.,Ltd. Address before: 226500 3rd floor, building 5, electronic information industrial park, No.2 Haiyang South Road, Chengnan street, Rugao City, Nantong City, Jiangsu Province Patentee before: Jiangsu Qinene New Materials Co.,Ltd. |