CN108418576A - 电平移位器 - Google Patents

电平移位器 Download PDF

Info

Publication number
CN108418576A
CN108418576A CN201711211282.XA CN201711211282A CN108418576A CN 108418576 A CN108418576 A CN 108418576A CN 201711211282 A CN201711211282 A CN 201711211282A CN 108418576 A CN108418576 A CN 108418576A
Authority
CN
China
Prior art keywords
output node
phase output
mos transistor
connect
nmos transistor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Withdrawn
Application number
CN201711211282.XA
Other languages
English (en)
Chinese (zh)
Inventor
坂口薰
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Ablic Inc
Original Assignee
Ablic Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ablic Inc filed Critical Ablic Inc
Publication of CN108418576A publication Critical patent/CN108418576A/zh
Withdrawn legal-status Critical Current

Links

Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
    • H03K19/018507—Interface arrangements
    • H03K19/018521—Interface arrangements of complementary type, e.g. CMOS
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K19/00—Logic circuits, i.e. having at least two inputs acting on one output; Inverting circuits
    • H03K19/0175—Coupling arrangements; Interface arrangements
    • H03K19/0185—Coupling arrangements; Interface arrangements using field effect transistors only
    • H03K19/018507—Interface arrangements
    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K3/00—Circuits for generating electric pulses; Monostable, bistable or multistable circuits
    • H03K3/02—Generators characterised by the type of circuit or by the means used for producing pulses
    • H03K3/353—Generators characterised by the type of circuit or by the means used for producing pulses by the use, as active elements, of field-effect transistors with internal or external positive feedback
    • H03K3/356—Bistable circuits
    • H03K3/356104—Bistable circuits using complementary field-effect transistors

Landscapes

  • Engineering & Computer Science (AREA)
  • Computer Hardware Design (AREA)
  • Physics & Mathematics (AREA)
  • Computing Systems (AREA)
  • General Engineering & Computer Science (AREA)
  • Mathematical Physics (AREA)
  • Logic Circuits (AREA)
CN201711211282.XA 2017-02-09 2017-11-28 电平移位器 Withdrawn CN108418576A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2017-022483 2017-02-09
JP2017022483A JP2018129727A (ja) 2017-02-09 2017-02-09 レベルシフタ

Publications (1)

Publication Number Publication Date
CN108418576A true CN108418576A (zh) 2018-08-17

Family

ID=63037987

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201711211282.XA Withdrawn CN108418576A (zh) 2017-02-09 2017-11-28 电平移位器

Country Status (5)

Country Link
US (1) US10418997B2 (https=)
JP (1) JP2018129727A (https=)
KR (1) KR20180092804A (https=)
CN (1) CN108418576A (https=)
TW (1) TWI713800B (https=)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10986154B2 (en) * 2016-05-16 2021-04-20 Glide Talk Ltd. System and method for interleaved media communication and conversion
CN112073048B (zh) * 2020-09-02 2022-11-04 敦泰电子（深圳）有限公司 电平移位电路
CN112311207A (zh) * 2020-11-17 2021-02-02 北京集创北方科技股份有限公司 电压转换装置、电源芯片及电子设备
CN113078896B (zh) * 2021-02-24 2024-08-23 广州安凯微电子股份有限公司 一种低输入电源幅度的电平转换电路
WO2023038314A1 (ko) * 2021-09-09 2023-03-16 광운대학교 산학협력단 에너지 효율 및 입력전압의 범위를 개선한 레벨 시프터
US11855630B2 (en) 2022-05-31 2023-12-26 Texas Instruments Incorporated Floating high-voltage level translator with adaptive bypass circuit
CN117318697B (zh) * 2023-09-15 2024-06-14 辰芯半导体（深圳）有限公司 电平移位电路和电源设备

Family Cites Families (42)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPS59214325A (ja) * 1983-05-19 1984-12-04 Seiko Epson Corp レベルシフト回路
JP3144166B2 (ja) * 1992-11-25 2001-03-12 ソニー株式会社 低振幅入力レベル変換回路
JPH10336007A (ja) * 1997-05-29 1998-12-18 Fujitsu Ltd レベルコンバータ、出力回路及び入出力回路
US6268755B1 (en) * 1997-11-04 2001-07-31 Texas Instruments Incorporated MOSFET predrive circuit with independent control of the output voltage rise and fall time, with improved latch immunity
US7196699B1 (en) * 1998-04-28 2007-03-27 Sharp Kabushiki Kaisha Latch circuit, shift register circuit, logical circuit and image display device operated with a low consumption of power
JP4063982B2 (ja) * 1998-12-04 2008-03-19 松下電器産業株式会社 レベルシフタ回路およびそれを用いた半導体装置
GB2349996A (en) * 1999-05-12 2000-11-15 Sharp Kk Voltage level converter for an active matrix LCD
JP2001036398A (ja) 1999-07-16 2001-02-09 Matsushita Electric Ind Co Ltd レベルシフタ回路
JP3665633B2 (ja) * 2002-09-20 2005-06-29 株式会社東芝 半導体集積回路
JP2005102086A (ja) * 2003-09-26 2005-04-14 Renesas Technology Corp 半導体装置およびレベル変換回路
JP4502190B2 (ja) * 2004-06-08 2010-07-14 ルネサスエレクトロニクス株式会社 レベルシフタ、レベル変換回路及び半導体集積回路
JP4502767B2 (ja) * 2004-09-29 2010-07-14 株式会社リコー レベルシフト回路
JP2006135560A (ja) * 2004-11-05 2006-05-25 Matsushita Electric Ind Co Ltd レベルシフト回路およびこれを含む半導体集積回路装置
JP2006287797A (ja) * 2005-04-04 2006-10-19 Nec Electronics Corp レベル変換回路
US7355446B2 (en) * 2005-05-20 2008-04-08 Samsung Electronics Co., Ltd. Voltage conversion circuit with stable transition delay characteristic
JP4758726B2 (ja) * 2005-10-19 2011-08-31 パナソニック株式会社 レベルシフト回路
US7834662B2 (en) * 2006-12-13 2010-11-16 Apple Inc. Level shifter with embedded logic and low minimum voltage
KR100856128B1 (ko) * 2007-02-12 2008-09-03 삼성전자주식회사 고속 동작이 가능한 레벨 쉬프터 및 그 방법
JP2009260804A (ja) * 2008-04-18 2009-11-05 Toshiba Corp パワーオン検知回路およびレベル変換回路
US7839171B1 (en) * 2009-05-19 2010-11-23 Advanced Micro Devices, Inc. Digital level shifter and methods thereof
US8115514B2 (en) * 2009-06-02 2012-02-14 Taiwan Semiconductor Manufacturing Co., Ltd. Pre-charged high-speed level shifters
JP5361685B2 (ja) * 2009-12-01 2013-12-04 株式会社東芝 半導体集積回路
JP5491319B2 (ja) * 2010-08-16 2014-05-14 ルネサスエレクトロニクス株式会社 表示ドライバ回路
JP2013131964A (ja) * 2011-12-22 2013-07-04 Renesas Electronics Corp レベルシフト回路及び表示装置の駆動回路
JP5838141B2 (ja) * 2012-02-27 2015-12-24 ルネサスエレクトロニクス株式会社 半導体集積回路
JP2013187712A (ja) 2012-03-07 2013-09-19 Renesas Electronics Corp レベルシフタ回路及び半導体集積回路並びにレベルシフタ回路の制御方法
JP2014003541A (ja) * 2012-06-20 2014-01-09 Toshiba Corp 半導体集積回路、および、スイッチ装置
JP5853104B2 (ja) * 2012-08-01 2016-02-09 ルネサスエレクトロニクス株式会社 レベルシフト回路
US9197200B2 (en) * 2013-05-16 2015-11-24 Dialog Semiconductor Gmbh Dynamic level shifter circuit
US9374090B2 (en) * 2013-06-11 2016-06-21 Agency For Science, Technology And Research Circuit arrangement and method of operating the same
JP2015012351A (ja) * 2013-06-27 2015-01-19 マイクロン テクノロジー， インク． 半導体装置
US9537478B2 (en) * 2014-03-06 2017-01-03 Semiconductor Energy Laboratory Co., Ltd. Semiconductor device
US9577626B2 (en) * 2014-08-07 2017-02-21 Skyworks Solutions, Inc. Apparatus and methods for controlling radio frequency switches
US9509308B2 (en) * 2014-09-30 2016-11-29 Synaptics Incorporated Supply-modulation cross domain data interface
US9257973B1 (en) * 2014-11-04 2016-02-09 Texas Instruments Incorporated Supply-state-enabled level shifter interface circuit and method
US9385722B2 (en) * 2014-11-25 2016-07-05 Intel Corporation Voltage level shifter circuit
US9490780B2 (en) * 2014-12-18 2016-11-08 Intel Corporation Apparatuses, methods, and systems for dense circuitry using tunnel field effect transistors
TWM517481U (zh) * 2015-05-21 2016-02-11 修平學校財團法人修平科技大學 電壓位準轉換器
US9917588B2 (en) * 2015-07-08 2018-03-13 Nxp B.V. Level shifter and approach therefor
US9954527B2 (en) * 2015-09-29 2018-04-24 Nvidia Corporation Balanced charge-recycling repeater link
US9584303B1 (en) * 2015-10-28 2017-02-28 Futurewei Technologies, Inc. Reference-less frequency detector with high jitter tolerance
DE102016109114B4 (de) * 2016-05-18 2025-06-18 Infineon Technologies Ag Pegelwandler-Schaltkreis, sowie Messanordnung und Chip mit einem solchen Pegelwandler-Schaltkreis

Also Published As

Publication number Publication date
US10418997B2 (en) 2019-09-17
US20180226971A1 (en) 2018-08-09
JP2018129727A (ja) 2018-08-16
TWI713800B (zh) 2020-12-21
TW201830861A (zh) 2018-08-16
KR20180092804A (ko) 2018-08-20

Similar Documents

Publication Publication Date Title
CN108418576A (zh) 电平移位器
CN101335518B (zh) 半导体装置
US20070176668A1 (en) Level shifter circuit
US11012073B2 (en) Level shifter circuit and method of operating the same
US11387818B2 (en) Level conversion device and method
US9553585B1 (en) Level shifter and parallel-to-serial converter including the same
CN102447469A (zh) 电压电平移位器
US7649387B2 (en) Output driving circuits
CN116667642A (zh) 电平转换电路及其开关驱动电路、电子设备
US20230327671A1 (en) Voltage level shifter and operation method thereof
CN113098495B (zh) 包含门电路的数字电路
US7358790B2 (en) High performance level shift circuit with low input voltage
CN106160728B (zh) 输出电路
TWI716657B (zh) 位準轉換電路
US10367495B2 (en) Half-bridge driver circuit
CN119785844B (zh) 一种电平转换电路与电子设备
CN115549671B (zh) 一种用于超宽范围电压转换的低功耗电平转换器
JP2009017276A (ja) 半導体装置
JP2013187712A (ja) レベルシフタ回路及び半導体集積回路並びにレベルシフタ回路の制御方法
JP2012169810A (ja) レベルシフト回路
CN113541674A (zh) 电压准位转换电路
US9590599B1 (en) Clock distribution for flip-flop circuits
CN101567686B (zh) 位准移位器及应用其的电路
Monga High speed stress tolerant 1.6 V–3.6 V low to high voltage CMOS level shift architecture in 40 nm
CN101232283A (zh) 栓锁式电平偏移电路

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
WW01 Invention patent application withdrawn after publication

Application publication date: 20180817

WW01 Invention patent application withdrawn after publication