CN108376675A - 半导体装置及其制造方法 - Google Patents

半导体装置及其制造方法 Download PDF

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Publication number
CN108376675A
CN108376675A CN201810073357.0A CN201810073357A CN108376675A CN 108376675 A CN108376675 A CN 108376675A CN 201810073357 A CN201810073357 A CN 201810073357A CN 108376675 A CN108376675 A CN 108376675A
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CN
China
Prior art keywords
lead
layer
supporting layer
electrode pad
electrode
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CN201810073357.0A
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English (en)
Inventor
渡边健雅
武直矢
儿玉幸雄
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Toyota Motor Corp
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Toyota Motor Corp
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Publication of CN108376675A publication Critical patent/CN108376675A/zh
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Abstract

本发明提供一种半导体装置及其制造方法，可抑制铝溅出。半导体装置具有：电极焊盘，配置在半导体基板的上部；及引线，接合于上述电极焊盘且含有铜。上述电极焊盘具有含有铝的电极层和比上述引线及上述电极层硬的支撑层。上述引线与上述电极层及上述支撑层接触。通过上述支撑层来支撑上述引线，抑制了上述电极层的变形。由此，可抑制铝溅出。

Description

半导体装置及其制造方法
技术领域
本说明书公开的技术涉及半导体装置及其制造方法。
背景技术
专利文献1公开了一种在铝制的电极焊盘上接合铜制的引线的技术。引线比电极焊盘硬，因此在接合时，电极焊盘被引线压扁，构成电极焊盘的材料被从引线的下部向外周侧压出。其结果是，在接合部的周围，电极焊盘隆起。该现象通常称为铝溅出(aluminumsplash)。当产生了铝溅出时，难以实现电极焊盘的小型化。在专利文献1的技术中，通过在电极焊盘的下部局部性地设置层间膜来抑制铝溅出。
在先技术文献
专利文献1：日本特开2012-109419号公报
发明内容
发明要解决的课题
在专利文献1的技术中，无法充分地抑制铝溅出。在本说明书中，提供一种更良好地抑制铝溅出的技术。
用于解决课题的方案
本说明书公开的半导体装置具有：电极焊盘，配置在半导体基板的上部；及引线，接合于上述电极焊盘且含有铜。上述电极焊盘具有含有铝的电极层和比上述引线及上述电极层硬的支撑层。上述引线与上述电极层及上述支撑层接触。
另外，在本说明书中，硬度是指维氏硬度。
该半导体装置的电极焊盘具有电极层和支撑层。含有铝的电极层比含有铜的引线软。支撑层比引线及电极层硬。引线与电极层及支撑层接触。即，引线以与电极层及支撑层接触的方式被接合。在接合时，从引线向电极层和支撑层施加载荷。此时，较硬的支撑层几乎不太变形，其结果是，也抑制了电极层的变形。因此，抑制了在电极层产生铝溅出。而且，含有铜的引线与含有铝的电极层被良好地连接。因此，根据该构造的半导体装置，能够抑制铝溅出，并能够将引线良好地连接于电极焊盘。
另外，本说明书提供一种半导体装置的新的制造方法。该制造方法具有将含有铜的引线接合于在半导体基板的上部配置的电极焊盘的工序。上述电极焊盘具有含有铝的电极层和比上述引线及上述电极层硬的支撑层。在进行接合的上述工序中，以使上述引线与上述电极层及上述支撑层接触的方式将上述引线接合于上述电极焊盘。
根据该结构，在进行接合的工序中，较硬的支撑层几乎不太变形，其结果是，也抑制了电极层的变形。因此，能够抑制铝溅出。
附图说明
图1是半导体装置的俯视图。
图2是信号用电极焊盘16的放大俯视图。
图3是信号用电极焊盘16和引线20的放大剖视图。
图4是接合工序的说明图。
图5是接合工序的说明图。
图6是变形例的信号用电极焊盘的放大俯视图。
图7是变形例的信号用电极焊盘的放大俯视图。
图8是变形例的信号用电极焊盘的放大俯视图。
图9是变形例的信号用电极焊盘的放大俯视图。
图10是变形例的信号用电极焊盘的放大剖视图。
具体实施方式
图1示出半导体装置的上表面。半导体装置具有半导体基板12。半导体基板12由以Si(硅)为主要成分的半导体构成。另外，半导体基板12也可以由以SiC(碳化硅)或GaN(氮化镓)等为主要成分的宽带隙半导体构成。在半导体基板12的上表面设有主电极14和信号用电极焊盘16。各信号用电极焊盘16的尺寸小于各主电极14的尺寸。主电极14通过焊料而与未图示的配线部件连接。在半导体基板12的侧方配置多个引脚18。各信号用电极焊盘16通过引线20而与对应的引脚18连接。而且，虽然未图示，但是在半导体基板12的下表面设有下部电极。下部电极通过焊料而与未图示的配线部件连接。
图2是一个信号用电极焊盘16的放大图。而且，图3是图2的III-III线的剖视图。如图2、3所示，信号用电极焊盘16设置在半导体基板12的上表面。另外，在图2、3中，信号用电极焊盘16与半导体基板12的上表面直接接触，但也可以在信号用电极焊盘16与半导体基板12之间配置有其他层(例如层间绝缘膜)。信号用电极焊盘16具有电极层30和支撑层32。
电极层30是以铝或AlSi(铝与硅的合金)为主要成分的金属层。例如，电极层30可以由单体的铝构成，也可以由AlSi构成。电极层30构成信号用电极焊盘16的大部分。
支撑层32是以钨为主要成分的金属层。例如，支撑层32可以由单体的钨构成。支撑层32比电极层30硬。支撑层32埋入于电极层30。如图2所示，支撑层32露出于信号用电极焊盘16的上表面。在不存在支撑层32的范围，电极层30露出于信号用电极焊盘16的上表面。支撑层32在信号用电极焊盘16的上表面呈格子状地延伸。更详细而言，支撑层32具有呈矩形环状地延伸的最外周部32a和在最外周部32a的内侧呈格子状地延伸的格子部32b。如图3所示，支撑层32从信号用电极焊盘16的上表面向下方延伸，直至到达信号用电极焊盘16的下表面(即，半导体基板12的上表面)。即，支撑层32从上表面至下表面地贯通电极层30。在由格子状的支撑层32包围的各范围34及比支撑层32的最外周部32a靠外侧的范围36存在电极层30。
引线20由以铜为主要成分的金属构成。例如，引线20可以由单体的铜构成。引线20比电极层30硬，且比支撑层32软。引线20具有直径较细的线状部20a和直径较粗的前端部20b。前端部20b接合于信号用电极焊盘16的上表面。另外，在图2中示出了引线20(即，前端部20b)与信号用电极焊盘16接触的范围20c。如图2、3所示，前端部20b与支撑层32的整个上表面及与支撑层32相邻的范围的电极层30接触。在前端部20b与电极层30之间的界面形成有铝和铜的合金(例如，CuAl、CuAl2等)。经由该合金而前端部20b被牢固地连接于电极层30。前端部20b与支撑层32相互紧贴，但是在它们的界面几乎未形成合金层。因此，前端部20b与支撑层32之间的连接强度不如前端部20b与电极层30之间的连接强度高。线状部20a从前端部20b向上方延伸。线状部20a的另一端与引脚18(参照图1)连接。
信号用电极焊盘16和引线20被绝缘树脂40覆盖。绝缘树脂40包含硫。
在引线20与电极层30之间的界面容易形成合金。另一方面，在引线20与支撑层32之间的界面难以形成合金。而且，在支撑层32与电极层30之间的界面也难以形成合金。
如图2、3所示，在信号用电极焊盘16与引线20的连接区域的最外周部，引线20与电极层30相接。当对引线20与电极层30之间的界面施加热量(180℃以上)时，在该界面处促进铜与铝的合金化反应。其结果是，在引线20与电极层30之间的界面生成Cu9Al4。于是，绝缘树脂40中的硫与Cu9Al4按照Cu9Al4+SO2→Al2(SO4)3+Cu的反应式进行反应，而生成铝氧化物层。铝氧化物较脆，因此引线20容易沿着铝氧化物层从电极层30剥离。当发生了剥离时，硫进入到该剥离部中，因此由于上述反应而剥离进一步进展。剥离沿着引线20与电极层30之间的界面，向前端部20b的中心侧进展。当剥离进展了一定程度时，剥离到达支撑层32的最外周部32a。因此，向引线20与支撑层32之间的界面供给硫。然而，即使供给硫，在引线20与支撑层32之间也几乎不会生成合金。因此，在引线20与支撑层32之间的界面难以剥离。因此，剥离在支撑层32的最外周部32a停止。因此，不会向由支撑层32包围的各范围34供给硫，在各范围34内能抑制引线20从电极层30剥离。而且，在电极层30与支撑层32之间也几乎不生成合金，因此也抑制了剥离沿着电极层30与支撑层32之间的界面进展。因此，在该半导体装置中，引线20不容易从信号用电极焊盘16剥离。
在图1～3所示的半导体装置的制造工序中，实施将引线20接合于信号用电极焊盘16的引线接合工序。在引线接合前，如图4所示，电极层30和支撑层32在信号用电极焊盘16的上表面露出。在引线接合工序中使用的引线接合器具有图4所示的焊针50。引线20插通于焊针50的中心孔内，引线20的前端从焊针50的前端向下侧突出。在引线接合工序中，通过放电而使引线20的前端暂时熔融，由此如图4所示在引线20的前端部20b形成球。前端部20b(球)的直径大于线状部20a的直径。在引线接合工序期间，通过引线接合器将信号用电极焊盘16加热。
接下来，如图5所示，通过使焊针50向信号用电极焊盘16移动而将前端部20b按压于信号用电极焊盘16。而且，在将前端部20b按压于信号用电极焊盘16的同时，通过焊针50对前端部20b施加超声波。由此，前端部20b被连接于信号用电极焊盘16。前端部20b被来自焊针50的载荷压扁。压扁后的前端部20b与在信号用电极焊盘16的上表面露出的整个支撑层32及与支撑层32相邻的范围的电极层30接触。而且，与前端部20b接触的范围的电极层30和支撑层32从前端部20b承受载荷。通过载荷而将电极层30沿着厚度方向压缩。另一方面，支撑层32较硬，因此即使承受载荷也几乎不变形。因此，通过支撑层32支撑前端部20b。其结果是，缓和了向电极层30施加的载荷。因此，抑制了电极层30在厚度方向上的变形。由于抑制了电极层30在厚度方向上的变形，因此电极层30被向信号用电极焊盘16的外周侧压出的量少。因此，抑制了在前端部20b的周围电极层30隆起。即，在前端部20b的周围形成的隆起部30a的高度比以往减小。这样，根据该制造方法，抑制了铝溅出。尤其是支撑层32具有呈环状地延伸的最外周部32a，因此可抑制由最外周部32a包围的范围内的电极层30被向最外周部32a的外侧压出。而且，在最外周部32a的内侧，呈格子状地设置支撑层32，因此可抑制由支撑层32包围的各范围34内的电极层30在横向上移动。因此，在该制造方法中，可更有效地抑制铝溅出。而且，在前端部20b与电极层30之间的界面上形成有CuAl或CuAl2等合金，而前端部20b与电极层30牢固地连接。然后，将引线20的相反侧的端部接合于引脚18。
如以上所说明的那样，根据实施方式的结构，能够抑制铝溅出，并将引线20牢固地连接于信号用电极焊盘16。而且，根据实施方式的结构，能够抑制因硫进入所引起的引线20的剥离。
另外，在上述实施方式中，在从上侧观察时支撑层32呈四边形的格子状地延伸。然而，如图6所示，支撑层32也可以呈六边形的格子状地延伸。而且，如图7所示，支撑层32可以仅由环状的最外周部32a构成。而且，如图8所示，支撑层32可以呈同心圆状地设置。在上述结构中，也能够通过支撑层32良好地支撑引线20的前端部20b，并抑制电极层30在横向上移动。而且，如图9所示，多个支撑层32可以分散配置。在该结构中，也能够通过支撑层32良好地支撑引线20的前端部20b。而且，能够通过各支撑层32的锚定效应，抑制电极层30在横向上移动。
另外，在上述实施方式中，支撑层32从上表面至下表面地贯通电极层30。然而，如图10所示，支撑层32也可以不到达电极层30的下表面。在该结构中，也是以露出于信号用电极焊盘16的上表面的方式设置支撑层32，因此能够抑制铝溅出。而且，在该结构中，也能够使因硫进入所引起的剥离停止。但是，在图10的结构中，向支撑层32的下部的电极层30施加载荷，该部分的电极层30有时会变形。因此，支撑层32从上表面至下表面地贯通电极层30的结构抑制铝溅出的效果较高。
另外，在上述实施方式中，以使引线20的前端部20b与支撑层32的整个上表面接触的方式实施了引线接合。然而，也可以是由于接合位置的偏差等而支撑层32的上表面的一部分存在于引线20的接触范围的外侧。即使在这样的情况下，也能够在一定程度上抑制铝溅出。
另外，在上述实施方式中，支撑层32由以钨为主要成分的金属构成。然而，支撑层32也可以由以氧化硅为主要成分的绝缘材料构成。而且，支撑层32也可以由其他的比引线20硬的材料构成。
对实施方式的结构要素与权利要求的结构要素的关系进行说明。实施方式的最外周部32a是权利要求中的环状部的一例。
以下列举本说明书公开的技术要素。另外，以下的各技术要素分别是独立有用的要素。
在本说明书公开的一例的结构中，可以是，支撑层从上表面至下表面地贯通电极层。
根据该结构，电极焊盘更不容易被压扁，能够更良好地抑制铝溅出。
在本说明书公开的一例的结构中，可以是，支撑层具有在电极焊盘的上表面呈环状地延伸的环状部。
根据该结构，能够在接合时抑制环状部的内侧的电极层向环状部的外侧移动。因此，能够更良好地抑制铝溅出。
在本说明书公开的一例的结构中，也可以是，支撑层具有在由环状部包围的范围内在电极焊盘的上表面呈格子状地延伸的部分。
根据该结构，能够抑制在接合时电极层在横向上移动。因此，能够更良好地抑制铝溅出。
在本说明书公开的一例的结构中，可以是，引线与整个环状部接触。
根据该结构，能够更良好地抑制铝溅出。
在本说明书公开的一例的结构中，可以是，电极焊盘具有与引线接触的多个支撑层。
根据该结构，能够通过多个支撑层支撑引线，因此电极焊盘更难以压扁。因此，能够更良好地抑制铝溅出。
在本说明书公开的一例的结构中，可以是，电极焊盘和引线由包含硫的树脂覆盖。引线与支撑层的组合可以是比引线与电极层的组合难以合金化的组合。
当硫从树脂进入到引线与电极层之间的界面时，铜和铝活化而合金反应发生进展。其结果是，在引线与电极层之间的界面生成Cu9Al4合金，引线从电极层剥离。该剥离沿着引线与电极层之间的界面进展。如上所述引线与支撑层难以合金化时，沿着引线与电极层的界面进展的剥离在引线与支撑层的界面处停止，能够防止剥离进一步进展。
在本说明书公开的一例的结构中，可以是，支撑层含有钨。
根据该结构，在支撑层也能够流过电流。
在本说明书公开的一例的结构中，可以是，支撑层含有氧化硅。
根据该结构，能够容易地形成支撑层。
以上，详细地说明了实施方式，但是这些只不过是例示，对权利要求书没有限定作用。在权利要求书记载的技术中，包括对以上例示的具体例进行了各种变形、变更的技术。本说明书或附图说明的技术要素是单独或通过各种组合而发挥技术有用性的要素，不限定于申请时权利要求记载的组合。而且，本说明书或附图例示的技术是同时实现多个目的的技术，实现其中的一个目的情况本身具有技术有用性。
附图标记说明
12：半导体基板
14：主电极
16：信号用电极焊盘
18：引脚
20：引线
20a：线状部
20b：前端部
20c：引线的接触范围
30：电极层
32：支撑层
32a：最外周部
32b：格子部
40：绝缘树脂
50：焊针

Claims (10)

1.一种半导体装置，具有：
电极焊盘，配置在半导体基板的上部；及
引线，接合于所述电极焊盘且含有铜，
所述电极焊盘具有含有铝的电极层和比所述引线及所述电极层硬的支撑层，
所述引线与所述电极层及所述支撑层接触。
2.根据权利要求1所述的半导体装置，其中，
所述支撑层从上表面至下表面地贯通所述电极层。
3.根据权利要求1或2所述的半导体装置，其中，
所述支撑层具有在所述电极焊盘的上表面呈环状地延伸的环状部。
4.根据权利要求3所述的半导体装置，其中，
所述支撑层具有在由所述环状部包围的范围内在所述电极焊盘的所述上表面呈格子状地延伸的格子部。
5.根据权利要求3或4所述的半导体装置，其中，
所述引线与整个所述环状部接触。
6.根据权利要求1～5中任一项所述的半导体装置，其中，
所述电极焊盘具有与所述引线接触的多个所述支撑层。
7.根据权利要求1～6中任一项所述的半导体装置，其中，
所述电极焊盘和所述引线被含硫的树脂覆盖，
所述引线与所述支撑层的组合是比所述引线与所述电极层的组合难以合金化的组合。
8.根据权利要求1～7中任一项所述的半导体装置，其中，
所述支撑层含有钨。
9.根据权利要求1～7中任一项所述的半导体装置，其中，
所述支撑层含有氧化硅。
10.一种半导体装置的制造方法，
所述制造方法具有将含有铜的引线接合于配置在半导体基板的上部的电极焊盘的工序，
所述电极焊盘具有含有铝的电极层和比所述引线及所述电极层硬的支撑层，
在进行接合的所述工序中，以使所述引线与所述电极层及所述支撑层接触的方式将所述引线接合于所述电极焊盘。
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