JP6604114B2 - 半導体モジュール - Google Patents
半導体モジュール Download PDFInfo
- Publication number
- JP6604114B2 JP6604114B2 JP2015187317A JP2015187317A JP6604114B2 JP 6604114 B2 JP6604114 B2 JP 6604114B2 JP 2015187317 A JP2015187317 A JP 2015187317A JP 2015187317 A JP2015187317 A JP 2015187317A JP 6604114 B2 JP6604114 B2 JP 6604114B2
- Authority
- JP
- Japan
- Prior art keywords
- layer
- lead frame
- semiconductor chip
- metal layer
- metal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims description 72
- 239000002184 metal Substances 0.000 claims description 53
- 229910052751 metal Inorganic materials 0.000 claims description 53
- 239000011347 resin Substances 0.000 claims description 44
- 229920005989 resin Polymers 0.000 claims description 44
- PXHVJJICTQNCMI-UHFFFAOYSA-N nickel Substances [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 43
- 125000006850 spacer group Chemical group 0.000 description 16
- 238000000034 method Methods 0.000 description 13
- 229910000679 solder Inorganic materials 0.000 description 12
- 239000000463 material Substances 0.000 description 11
- 239000010949 copper Substances 0.000 description 8
- 230000007797 corrosion Effects 0.000 description 6
- 238000005260 corrosion Methods 0.000 description 6
- 238000001746 injection moulding Methods 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 5
- 239000000853 adhesive Substances 0.000 description 3
- 230000001070 adhesive effect Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 229910052759 nickel Inorganic materials 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 239000011265 semifinished product Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000008646 thermal stress Effects 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 230000012447 hatching Effects 0.000 description 1
- 238000003475 lamination Methods 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 230000002265 prevention Effects 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 238000007740 vapor deposition Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/2612—Auxiliary members for layer connectors, e.g. spacers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
- H01L2224/321—Disposition
- H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
- H01L2224/33—Structure, shape, material or disposition of the layer connectors after the connecting process of a plurality of layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
- H01L2924/181—Encapsulation
Landscapes
- Cooling Or The Like Of Semiconductors Or Solid State Devices (AREA)
Description
本明細書または図面に説明した技術要素は、単独であるいは各種の組み合わせによって技術的有用性を発揮するものであり、出願時請求項記載の組み合わせに限定されるものではない。また、本明細書または図面に例示した技術は複数目的を同時に達成するものであり、そのうちの一つの目的を達成すること自体で技術的有用性を持つものである。
21、22:半導体チップ
30 :下側リードフレーム
32 :母材
34 :Ni層
36 :Al層
41、42:スペーサブロック
42 :スペーサブロック
50 :上側リードフレーム
62〜67:はんだ層
70 :樹脂層
80 :剥離部
Claims (1)
- 半導体モジュールであって、
表面が第1金属層により構成されているリードフレームと、
前記第1金属層の表面の一部を覆うとともに前記第1金属層よりもイオン化傾向が大きい第2金属層と、
前記第1金属層に接合層を介して固定されている半導体チップと、
前記半導体チップ、前記半導体チップの周囲の前記リードフレームの表面、前記第2金属層、及び、前記第2金属層の周囲の前記リードフレームの表面を覆っている樹脂層、
を有しており、
前記第2金属層の全体が前記樹脂層に覆われており、
前記半導体チップと前記リードフレームの積層方向に沿って見たときに、前記第2金属層が前記半導体チップを囲むように伸びている、
半導体モジュール。
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015187317A JP6604114B2 (ja) | 2015-09-24 | 2015-09-24 | 半導体モジュール |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015187317A JP6604114B2 (ja) | 2015-09-24 | 2015-09-24 | 半導体モジュール |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2017063105A JP2017063105A (ja) | 2017-03-30 |
JP6604114B2 true JP6604114B2 (ja) | 2019-11-13 |
Family
ID=58430239
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2015187317A Active JP6604114B2 (ja) | 2015-09-24 | 2015-09-24 | 半導体モジュール |
Country Status (1)
Country | Link |
---|---|
JP (1) | JP6604114B2 (ja) |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS5969952A (ja) * | 1982-10-15 | 1984-04-20 | Nec Corp | 半導体装置 |
JPS644052A (en) * | 1987-06-25 | 1989-01-09 | Nec Corp | Semiconductor device |
JP5071719B2 (ja) * | 2008-02-18 | 2012-11-14 | 三菱電機株式会社 | 電力用半導体装置 |
JP2013004860A (ja) * | 2011-06-20 | 2013-01-07 | Sanken Electric Co Ltd | 半導体装置 |
-
2015
- 2015-09-24 JP JP2015187317A patent/JP6604114B2/ja active Active
Also Published As
Publication number | Publication date |
---|---|
JP2017063105A (ja) | 2017-03-30 |
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