JP2012109455A - 半導体装置及びその製造方法 - Google Patents
半導体装置及びその製造方法 Download PDFInfo
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- JP2012109455A JP2012109455A JP2010258088A JP2010258088A JP2012109455A JP 2012109455 A JP2012109455 A JP 2012109455A JP 2010258088 A JP2010258088 A JP 2010258088A JP 2010258088 A JP2010258088 A JP 2010258088A JP 2012109455 A JP2012109455 A JP 2012109455A
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Abstract
【解決手段】 半導体チップ20の少なくとも1つの電極パッド21s、21dにおいて、単一の電極パッド21上に、第1ワイヤ41が複数箇所45でボンディングされる。さらに、第1ワイヤ41に沿って、第1ワイヤ上41に、第2ワイヤ42が複数箇所46でボンディングされる。一部の実施形態において、第2ワイヤ42のボンディングに先立って、電極パッド21上の第1ワイヤ41の頂部形状を加工してもよい。
【選択図】 図1
Description
20 半導体チップ
21 電極パッド
30 リードフレーム(パッケージ端子)
31 リード
32 ステージ
40 ワイヤ
41 下層ワイヤ(第1層ワイヤ)
42 上層ワイヤ(第2層ワイヤ)
43 第3層ワイヤ
45、46 ボンディング箇所
47 凹部
50、50’ ボンドツール
51、51’ 窪み
52 突起
55 カッター
60 押圧部材
Claims (7)
- 半導体チップの少なくとも1つの電極パッドにおいて、単一の電極パッド上に第1ワイヤを複数箇所でボンディングする工程と、
前記第1ワイヤに沿って前記第1ワイヤ上に第2ワイヤを複数箇所でボンディングする工程と、
を有することを特徴とする半導体装置の製造方法。 - 前記第2ワイヤのボンディングに先立って、前記電極パッド上の前記第1ワイヤの頂部形状を加工する工程を更に有する、ことを特徴とする請求項1に記載の半導体装置の製造方法。
- 前記加工する工程は、前記電極パッド上にボンディングされた前記第1ワイヤの頂部を平坦化することを有する、ことを特徴とする請求項2に記載の半導体装置の製造方法。
- 前記加工する工程は、前記電極パッド上に前記第1ワイヤをボンディングするときに、前記第1ワイヤの頂部に凹部を形成することを有する、ことを特徴とする請求項2に記載の半導体装置の製造方法。
- 前記第1ワイヤをボンディングする工程は、1つの電極パッド上に少なくとも2つの第1ワイヤを、前記第2ワイヤの線径より小さい間隙を形成するように並べてボンディングし、
前記第2ワイヤをボンディングする工程は、前記第2ワイヤを前記間隙上に配置して、隣り合う2つの第1ワイヤ上に前記第2ワイヤをボンディングする、
ことを特徴とする請求項1に記載の半導体装置の製造方法。 - 前記電極パッド上にボンディングされた前記第1ワイヤを、前記半導体装置の電極端子上の第1の箇所にボンディングする工程と、
前記第1ワイヤ上にボンディングされた前記第2ワイヤを、前記半導体装置の前記電極端子上の、前記第1の箇所と異なる第2の箇所にボンディングする工程と、
を更に有することを特徴とする請求項1乃至5の何れか一項に記載の半導体装置の製造方法。 - 半導体チップと、
前記半導体チップの少なくとも1つの電極パッドにおいて、単一の電極パッド上に複数箇所でボンディングされた第1ワイヤと、
前記第1ワイヤに沿って前記第1ワイヤ上に複数箇所でボンディングされた第2ワイヤと、
を有することを特徴とする半導体装置。
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JP2014116334A (ja) * | 2012-12-06 | 2014-06-26 | Mitsubishi Electric Corp | ウェッジボンディング用ツール、及びウェッジボンディング方法 |
JP2015065213A (ja) * | 2013-09-24 | 2015-04-09 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP2015153819A (ja) * | 2014-02-12 | 2015-08-24 | カルソニックカンセイ株式会社 | ボンディング構造、およびそのボンディング構造を実現するボンディング治具、ボンディング方法 |
JP2016146386A (ja) * | 2015-02-06 | 2016-08-12 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
JP2017201722A (ja) * | 2017-08-03 | 2017-11-09 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US20210143105A1 (en) * | 2016-03-10 | 2021-05-13 | Amkor Technology Singapore Holding Pte. Ltd. | Semiconductor device having conductive wire with increased attachment angle and method |
JP2021145051A (ja) * | 2020-03-12 | 2021-09-24 | 株式会社東芝 | 半導体装置、及びワイヤボンディング方法 |
DE102021200562A1 (de) | 2021-01-22 | 2022-07-28 | Vitesco Technologies Germany Gmbh | Halbleitermodul |
WO2023058110A1 (ja) * | 2021-10-05 | 2023-04-13 | 三菱電機株式会社 | ウェッジツール及び半導体装置の製造方法 |
JP7334655B2 (ja) | 2020-03-06 | 2023-08-29 | 三菱電機株式会社 | 半導体装置 |
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