CN1082750A - 接触式记录的磁记录磁盘 - Google Patents
接触式记录的磁记录磁盘 Download PDFInfo
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Abstract
一种基于常规磁盘技术的磁记录磁盘,它既有极
为光滑的上表面又有高矫顽力,并且使用在要求有极
其光滑的磁头-磁盘界面和高矫顽力磁盘的接触式
记录磁盘存储器中。磁盘基底上的高精加工的无织
构的NiP镀层被氧化并形成一个NiO膜。该NiO
膜允许后续溅镀的磁层具有极高的矫顽性,各层与抛
光的NiP光滑表面一致,保持了磁盘顶层极其光滑
的表面。在形成基底上的NiO膜的最佳方法中,基
底在空气中低于能使NiP膜晶化的温度下被韧化。
Description
本发明涉及一种薄膜金属合金磁记录磁盘和这种盘的制造方法,并且涉及一种利用磁盘为接触式记录提供改进的磁头-磁盘界面的磁盘存储器。
在常规的旋转刚性盘存储器中,每个读/写传感器(或磁头)固定在一个载体(或滑块)之上,当相应的磁盘以其操作速度旋转时,载体浮在盘表面之上的空气垫或空气轴承上。滑块利用一个相对脆性悬挂连接到一个线性或旋转式致动器。磁盘存储器中可以有一叠磁盘,致动器支持数个滑块。致动器径向移动滑块,以致每个磁头可以访问其相联的磁盘表面的记录区。在这些常规磁盘存储器中,滑块由来自悬挂的弱小的力向磁盘表面偏置。因为从磁盘存储器启动时直到磁盘达到足够速度以使滑块浮在空气轴承之上之前,滑块与磁盘表面接触,并且当磁盘存储器关闭、磁盘转速下降到不能产生空气轴承时,滑块也与磁盘表面接触。这样的磁盘存储器称为接触-启动-停止(CSS)磁盘存储器。在CSS磁盘存储器中,磁盘表面不必非常光滑,因为只是在启动和停止操作中接触滑块。然而仍然希望磁盘表面具有一定的结构,以便减少当滑块停在磁盘表面之上时滑块和磁盘之间的静摩擦力。
除了上述常规CSS磁记录磁盘存储器之外,已提出了“接触式”记录刚性磁盘存储器。在一种称为“液体轴承”接触式记录的接触式记录中,磁头-磁盘界面包括一个在传感器载体和磁盘之间的作为液体轴承的液膜。该类型的接触式记录磁盘存储器的一种例子在受让人的未决申请(US系列号264,604,申请日1988年10月31日)中加以描述,该申请于1990年5月9日公布为欧洲公布申请EP367510。在另一类称为“干”接触式记录的接触式记录中,磁盘存储器使用了一体化的磁头-悬挂,它在读和写操作中与磁盘表面产生物理接触。在该类型的磁头-悬挂中,如美国专利5,041,932的例子所述,在磁盘存储器的寿命期内,磁头的一部分实际上因与磁盘的摩擦接触而磨损。在两种类型的接触式记录磁盘存储器中,因为狭窄的磁头-磁盘间隔,有必要使磁盘表面极其光滑。
在刚性磁盘存储器中已用到的一种类型的磁盘是薄膜金属合金磁盘,它一般包括一个带有镍-磷(NiP)表面镀层的诸如铝-锰(AlMg)合金的基底,一种溅镀到基底上作为磁层的诸如CoPt或CoNi合金的钴基合金,以及在磁层上形成的诸如溅镀的非晶性氢化碳膜的保护性涂层。除磁层和保护性涂层之外,薄膜磁盘还包括一个在基底和磁层之间的诸如铬(Cr)、铬-钒(CrV)或钨(W)层的垫层和一个在磁层和保护性涂层之间的诸如Cr、W或钛(Ti)层的粘着层。尽管该常规磁盘适用于在CSS磁盘存储器中使用,已经发现当AlMg-NiP基底做成非常平滑(如接触式记录磁盘存储器使用的磁盘所要求)时,不可能用常规方式制造磁盘并达到所要求的磁盘矫顽力。
这样,在常规磁盘技术基础上改进的薄膜金属合金磁记录磁盘是需要的,它能够用于接触式记录磁盘存储器,以致这样的存储器既具有要求的平滑的磁头-磁盘界面,又具有要求的磁盘矫顽力。
本发明是一种磁记录磁盘和磁盘的制造方法,以及具有改进的磁头-磁盘界面和磁记录特性的接触式记录磁盘存储器。磁盘基底上的超精加工的无织构的NiP镀层被氧化而形成一层NiO膜。该NiO膜允许随后溅镀的磁层具有较高的矫顽力,这使磁盘能够用于接触式记录应用中。装配磁盘的NiO膜和随后的溅镀层与抛光的NiP的平滑表面一致,这样保持了接触式记录磁盘存储器所要求的、磁盘顶层的极其光滑的表面。
在基底上形成NiO膜的最佳方法中,基底在空气中在低于使NiP膜晶化的温度下被韧化。
图1是示意性说明液体轴承接触式记录磁盘存储器的主要组件的分部侧视图;
图2是图1的磁盘存储器移去盖板11后的顶视图;
图3图示了一个液体轴承接触式记录磁盘存储器的磁头-磁盘界面;
图4图示了一个干接触式记录磁盘存储器的磁头-磁盘界面;
图5是说明各磁盘层的本发明的磁盘的剖视图;
图6是磁盘具有和不具有空气韧化所形成的氧化膜时,矫顽力作为韧化温度的函数的曲线图;以及
图7是磁盘具有和不具有在O2-Ar氛围中溅射浸蚀形成的氧化膜时,矫顽力作为浸蚀电压的函数的曲线图。
首先参照图1,以剖面图方式图示了本发明的磁盘存储器的液体轴承接触式记录实施例的简图。磁盘存储器包括一个用于固定磁盘驱动电机12和致动器14的底座10,以及一个盖板11。底座10和盖板11为磁盘驱动器提供了基本封闭的外壳。一般在底座10和盖板11之间设置有垫圈13,并且设有一个小通气孔(未示出),用以平衡磁盘存储器内部与外界环境之间的气压。这种类型的磁盘存储器为基本封闭的是因为驱动电机12完全设置在外壳内并且没有用于冷却内部组件的外界压力供气。磁记录磁盘16安装在轴18上,该轴由驱动电机12转动。在传感器载体20上构成一个读/写磁头或传感器(未示出)。载体20利用一条刚性臂22和一个悬挂24连接到致动器14。悬挂24提供一个偏置力使传感器载体20压到记录磁盘16的表面上。在磁盘存储器操作期间,驱动电机12以恒定速度转动磁盘16,致动器14(一般为线性或旋转式音圈电机VCM)在磁盘16表面上总是径向移动传感器载体20,以致读/写磁头可以访问磁盘16上不同的数据磁道。
图2是磁盘存储器移去盖板11后内部的顶视图,并且图示了一个环形润滑剂仓30,它提供了一种承装液体润滑剂的装置,这些润滑剂用以补充磁盘16表面上的润滑剂。在磁盘16的表面上维持一个连续的润滑剂薄膜,并且在操作期间由来自仓30的润滑剂加以补充。图2也更详细地图示了向载体20提供一个力以使载体20与磁盘16上的润滑剂膜保持接触的悬挂24。悬挂可以是诸如用于带空气轴承滑块的磁盘存储器中的常规类型的悬挂。一个例子是熟知的Watrous悬挂,如在受让人的美国专利4,167,765中所说明的。该类型的悬挂还提供了传感器载体的万向架固定装置,它允许载体浮于液体润滑剂膜之上时载体的俯仰和摇摆。
图3图示了本发明的液体轴承接触式记录实施例中传感器载体20的侧视图和磁盘16的剖视图。载体20在其尾部有一滑脚40,并在其后缘44安装有磁头42。滑脚40与磁盘16上的液膜50接触,并在读或写操作期间由所连接的悬挂24提供的偏置力保持接触。
图4图示了本发明的干接触式记录实施例中一个一体化磁头-悬挂23的侧剖视图和磁盘16的剖视图。一体化磁头-悬挂23提供了图3液体轴承实施例中悬挂24和载体20的功能。然而相反,示为磁头尖27和线圈29的传感器嵌入一体化磁头-悬挂23内部。磁盘16的表面上没有液膜,从而不需要润滑剂仓,并在读或写操作期间磁头-悬挂23与磁盘16的表面直接接触。
现在参照图5,用剖视图说明了本发明的磁盘16。磁盘基底60包括一个带有NiP表面镀层62的AlMg基体61。基底是可以在市场上购得的磁盘基底,可以从诸如Toyo Kohan和Nippon Light Metals的几家卖方得到。AlMg一般为5586铝合金,并且NiP化学镀到大约10-15微米的厚度。在接触式记录的应用中,NiP镀层62的表面需要极其光滑。这样,利用比如Al2O3磨料的机械抛光的各种已知技术对NiP镀层62进行抛光,以获得大约是10埃或稍小的算术平均表面粗糙度(Ra)。然后利用以下所述技术的任一种在NiP镀层62上形成实质上是由NiO组成的氧化镍膜64。NiO膜64的厚度并不是严格的,只要它的厚度足以控制垫层的核化。已经发现这一厚度在大约10-30埃范围之内,并且最好厚度大约大于20埃。在NiO膜64形成之后,磁盘16的余下已知各层通过溅镀以常规方式形成。这些包括厚度大约为200-1200埃的Cr或CrV垫层66,厚度大约为100-500埃的诸如CoPtCr或CoNi合金的Co合金磁层67,凤及在氢环境下从一个碳极上溅镀的厚度大约为250埃的氧化碳保护性涂层68。因为后续镀的层保持了基底表面的形状,所以需要基底表面(即NiP表面镀层62的表面)极其光滑,以便保护性涂层68的表面具有接触式记录磁盘存储器所要求的对于磁头的极其光滑的界面。
在形成NiO膜64的最佳过程中,清洗基底60,然后置于燃烧室中,在空气中加热至100-200摄氏度范围内的温度大约20至60分钟。温度必须保持在大约250摄氏度以下,在250摄氏度时,非晶性NiP可以晶化。该氧化过程的结果是在NiP镀层64之上形成厚度大约为10-30埃的实质上由NiO组成的膜。尽管测试该氧化膜肯定了主要成分是NiO,但也包括诸如NiO2t Ni2O3的其他氧化物。比较起来,NiP镀层62的表面经清洗后的测试表明原氧化层厚度大约为15埃,而没有显著的NiO。
在形成NiO膜64的另一过程中,通过在有氧的条件下溅镀来实现氧化。将基底60置于真空容器中,在含有大约10%O2的氩(Ar)氛围中溅蚀NiP表面镀层62。然后迅速地在真空环境下溅镀后续磁盘层66、67和68。
由NiP表面镀层的氧化而得到的磁盘矫顽力的改进示于图6和图7中。图6中,具有不同的顽磁-厚度积(M1×t)值和Co78Pt8Cr20磁层的磁盘是在具有或不具有空气中韧化形成的NiO膜的超精加工的(Ra=7埃)基底上制造的。如图示,对于那些具有在100-200摄氏度范围内韧化60分钟而形成的NiO膜的磁盘,其矫顽力显著增长。例如,对于Mr×t=0.75memu/cm2的磁盘,当在150摄氏度空气韧化60分钟而形成一NiO膜时,其矫顽力从900Oe(无NiO膜)增长到1850Oe,即大于大约1800Oe。图7中,相似的磁盘是在超精加工的基底上制造的,这些基底在具有10%O2的Ar氛围中和750和1250溅蚀电压下经过了10和20秒的溅蚀。如图示,具有已溅蚀基底的磁盘,其矫顽力显著增大。例如,当在750伏特溅蚀10秒时,矫顽力由1000Oe增大到1300Oe,当在1250伏特溅蚀10秒时,矫顽力由1000Oe增大到1850Oe。
还发现高精加工的NiP镀层的氧化在其他方面改进了磁盘。抛光NiP时在表面上留下一些残余的划痕。这些划痕能够导致磁非均质性,沿划痕方向增加了矫顽力和垂直度。因为残余的划痕并非与记录磁道方向平行排列,非均质性产生不需要的信号幅度调制。在NiP镀层上形成NiO膜通过改变垫层和磁层的晶体方向显著降低了这种调制。
Claims (10)
1、一种薄膜金属合金磁记录磁盘,其特征是:
一个包含带有一个镍-磷表面镀层的铝合金的基底;
一个在镍-磷镀层上形成的氧化镍膜;
一个在氧化镍膜上形成的垫层;以及
一个在垫层上形成的含有钴基合金的磁层。
2、根据权利要求1的磁盘,其特征在于垫层包括铬或铬钒合金。
3、根据权利要求1的磁盘,其特征在于包括一个在磁层之上形成的保护性涂层。
4、根据权利要求1的磁盘,其特征在于镍-磷镀层的算术平均表面粗糙度小于大约10埃。
5、根据权利要求1的磁盘,其特征在于磁盘的矫顽力大于大约1800奥斯特。
6、一种用于制造磁记录磁盘的方法,其特征是:
提供一个带有镍-磷表面镀层的铝合金的磁盘基底,基底表面的算术平均粗糙度(Ra)小于大约10埃;
直接在镍-磷镀层上形成一个氧化镍膜;
在氧化镍膜上溅镀一个垫层;
在垫层上溅镀一个钴合金磁层;以及
在磁层之上形成一个保护性涂层。
7、根据权利要求6的方法,其特征在于形成氧化镍膜的步骤进一步包括在有氧情况下溅蚀镍-磷镀层。
8、根据权利要求6的方法,其特征在于形成氧化镍膜的步骤进一步包括在有氧情况下加热基底。
9、根据权利要求6的方法,其特征在于形成氧化镍膜的步骤进一步包括形成厚度大于大约20埃的氧化镍膜。
10、根据权利要求6的方法,其特征在于溅镀垫层的步骤包括溅镀铬或铬钒合金的垫层。
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US07/926,986 US5302434A (en) | 1992-08-07 | 1992-08-07 | Magnetic recording disk for contact recording |
US07/926,986 | 1992-08-07 |
Publications (2)
Publication Number | Publication Date |
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CN1082750A true CN1082750A (zh) | 1994-02-23 |
CN1062673C CN1062673C (zh) | 2001-02-28 |
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CN93108693A Expired - Fee Related CN1062673C (zh) | 1992-08-07 | 1993-07-07 | 接触式记录的磁记录磁盘 |
Country Status (6)
Country | Link |
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US (1) | US5302434A (zh) |
JP (1) | JPH07122933B2 (zh) |
KR (1) | KR970005351B1 (zh) |
CN (1) | CN1062673C (zh) |
MY (1) | MY107917A (zh) |
TW (1) | TW234760B (zh) |
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-
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- 1993-06-22 JP JP5150247A patent/JPH07122933B2/ja not_active Expired - Lifetime
- 1993-07-07 KR KR1019930012880A patent/KR970005351B1/ko active IP Right Grant
- 1993-07-07 CN CN93108693A patent/CN1062673C/zh not_active Expired - Fee Related
- 1993-07-07 MY MYPI93001332A patent/MY107917A/en unknown
Cited By (2)
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CN1110797C (zh) * | 1998-07-31 | 2003-06-04 | 国际商业机器公司 | 由纳米级粒子形成的磁存储介质 |
CN100411017C (zh) * | 2004-04-01 | 2008-08-13 | 富士电机电子设备技术株式会社 | 用于垂直磁记录介质的基板和用该基板的垂直磁记录介质 |
Also Published As
Publication number | Publication date |
---|---|
JPH07122933B2 (ja) | 1995-12-25 |
US5302434A (en) | 1994-04-12 |
KR970005351B1 (ko) | 1997-04-15 |
KR940002788A (ko) | 1994-02-19 |
JPH0676279A (ja) | 1994-03-18 |
MY107917A (en) | 1996-06-29 |
TW234760B (zh) | 1994-11-21 |
CN1062673C (zh) | 2001-02-28 |
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