CN108198817B - 用于制造半导体器件的方法 - Google Patents
用于制造半导体器件的方法 Download PDFInfo
- Publication number
- CN108198817B CN108198817B CN201711466698.6A CN201711466698A CN108198817B CN 108198817 B CN108198817 B CN 108198817B CN 201711466698 A CN201711466698 A CN 201711466698A CN 108198817 B CN108198817 B CN 108198817B
- Authority
- CN
- China
- Prior art keywords
- film
- pattern
- region
- semiconductor device
- conductor film
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 232
- 238000000034 method Methods 0.000 title claims abstract description 98
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 66
- 230000015654 memory Effects 0.000 claims abstract description 198
- 239000000758 substrate Substances 0.000 claims description 96
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 84
- 229910052814 silicon oxide Inorganic materials 0.000 claims description 84
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 68
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 68
- 229910021332 silicide Inorganic materials 0.000 claims description 66
- FVBUAEGBCNSCDD-UHFFFAOYSA-N silicide(4-) Chemical compound [Si-4] FVBUAEGBCNSCDD-UHFFFAOYSA-N 0.000 claims description 66
- 239000004020 conductor Substances 0.000 claims description 43
- 239000012535 impurity Substances 0.000 claims description 19
- 238000002955 isolation Methods 0.000 claims description 16
- 229910052751 metal Inorganic materials 0.000 claims description 14
- 239000002184 metal Substances 0.000 claims description 14
- 230000006870 function Effects 0.000 claims description 3
- 239000003990 capacitor Substances 0.000 claims 1
- 238000000059 patterning Methods 0.000 claims 1
- 229910021420 polycrystalline silicon Inorganic materials 0.000 abstract description 258
- 229920005591 polysilicon Polymers 0.000 abstract description 255
- LPQOADBMXVRBNX-UHFFFAOYSA-N ac1ldcw0 Chemical compound Cl.C1CN(C)CCN1C1=C(F)C=C2C(=O)C(C(O)=O)=CN3CCSC1=C32 LPQOADBMXVRBNX-UHFFFAOYSA-N 0.000 abstract 1
- 239000010410 layer Substances 0.000 description 103
- 230000015572 biosynthetic process Effects 0.000 description 69
- 238000009792 diffusion process Methods 0.000 description 26
- 239000011229 interlayer Substances 0.000 description 23
- 238000005498 polishing Methods 0.000 description 21
- 125000006850 spacer group Chemical group 0.000 description 20
- 229920002120 photoresistant polymer Polymers 0.000 description 19
- 238000001312 dry etching Methods 0.000 description 15
- 238000005468 ion implantation Methods 0.000 description 14
- 238000005530 etching Methods 0.000 description 13
- 230000000149 penetrating effect Effects 0.000 description 12
- 238000005229 chemical vapour deposition Methods 0.000 description 11
- 150000002500 ions Chemical class 0.000 description 8
- 239000005001 laminate film Substances 0.000 description 8
- 238000000206 photolithography Methods 0.000 description 8
- 230000000052 comparative effect Effects 0.000 description 7
- 230000008878 coupling Effects 0.000 description 5
- 238000010168 coupling process Methods 0.000 description 5
- 238000005859 coupling reaction Methods 0.000 description 5
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 5
- 229910052721 tungsten Inorganic materials 0.000 description 5
- 239000010937 tungsten Substances 0.000 description 5
- 230000004888 barrier function Effects 0.000 description 4
- 230000015556 catabolic process Effects 0.000 description 4
- 230000008859 change Effects 0.000 description 4
- 239000010941 cobalt Substances 0.000 description 4
- 229910017052 cobalt Inorganic materials 0.000 description 4
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 230000008021 deposition Effects 0.000 description 4
- 238000001039 wet etching Methods 0.000 description 4
- 238000009825 accumulation Methods 0.000 description 3
- 229910052785 arsenic Inorganic materials 0.000 description 3
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 3
- 230000007423 decrease Effects 0.000 description 3
- 230000005669 field effect Effects 0.000 description 3
- 230000035515 penetration Effects 0.000 description 3
- 230000009467 reduction Effects 0.000 description 3
- 238000004544 sputter deposition Methods 0.000 description 3
- 230000002411 adverse Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- ZOXJGFHDIHLPTG-UHFFFAOYSA-N Boron Chemical compound [B] ZOXJGFHDIHLPTG-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 229910052796 boron Inorganic materials 0.000 description 1
- 239000000969 carrier Substances 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- -1 for example Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 229910044991 metal oxide Inorganic materials 0.000 description 1
- 150000004706 metal oxides Chemical class 0.000 description 1
- 229910021421 monocrystalline silicon Inorganic materials 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- MZLGASXMSKOWSE-UHFFFAOYSA-N tantalum nitride Chemical compound [Ta]#N MZLGASXMSKOWSE-UHFFFAOYSA-N 0.000 description 1
- 230000005641 tunneling Effects 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/06—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration
- H01L27/0611—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region
- H01L27/0617—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type
- H01L27/0629—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including a plurality of individual components in a non-repetitive configuration integrated circuits having a two-dimensional layout of components without a common active region comprising components of the field-effect type in combination with diodes, or resistors, or capacitors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/41—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions
- H01L29/423—Electrodes ; Multistep manufacturing processes therefor characterised by their shape, relative sizes or dispositions not carrying the current to be rectified, amplified or switched
- H01L29/42312—Gate electrodes for field effect devices
- H01L29/42316—Gate electrodes for field effect devices for field-effect transistors
- H01L29/4232—Gate electrodes for field effect devices for field-effect transistors with insulated gate
- H01L29/4234—Gate electrodes for transistors with charge trapping gate insulator
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66833—Unipolar field-effect transistors with an insulated gate, i.e. MISFET with a charge trapping gate insulator, e.g. MNOS transistors
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C11/00—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor
- G11C11/56—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency
- G11C11/5671—Digital stores characterised by the use of particular electric or magnetic storage elements; Storage elements therefor using storage elements with more than two stable states represented by steps, e.g. of voltage, current, phase, frequency using charge trapping in an insulator
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
-
- G—PHYSICS
- G11—INFORMATION STORAGE
- G11C—STATIC STORES
- G11C16/00—Erasable programmable read-only memories
- G11C16/02—Erasable programmable read-only memories electrically programmable
- G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
- G11C16/0466—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS]
- G11C16/0475—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells with charge storage in an insulating layer, e.g. metal-nitride-oxide-silicon [MNOS], silicon-oxide-nitride-oxide-silicon [SONOS] comprising two or more independent storage sites which store independent data
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
- H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
- H01L29/66409—Unipolar field-effect transistors
- H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
- H01L29/66545—Unipolar field-effect transistors with an insulated gate, i.e. MISFET using a dummy, i.e. replacement gate in a process wherein at least a part of the final gate is self aligned to the dummy gate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/792—Field effect transistors with field effect produced by an insulated gate with charge trapping gate insulator, e.g. MNOS-memory transistors
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B10/00—Static random access memory [SRAM] devices
- H10B10/12—Static random access memory [SRAM] devices comprising a MOSFET load element
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/10—EEPROM devices comprising charge-trapping gate insulators characterised by the top-view layout
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10B—ELECTRONIC MEMORY DEVICES
- H10B43/00—EEPROM devices comprising charge-trapping gate insulators
- H10B43/30—EEPROM devices comprising charge-trapping gate insulators characterised by the memory core region
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8232—Field-effect technology
- H01L21/8234—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type
- H01L21/823468—MIS technology, i.e. integration processes of field effect transistors of the conductor-insulator-semiconductor type with a particular manufacturing method of the gate sidewall spacers, e.g. double spacers, particular spacer material or shape
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Semiconductor Memories (AREA)
- Non-Volatile Memory (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2012-194420 | 2012-09-04 | ||
JP2012194420A JP5936959B2 (ja) | 2012-09-04 | 2012-09-04 | 半導体装置の製造方法 |
CN201310393395.1A CN103681352B (zh) | 2012-09-04 | 2013-09-03 | 用于制造半导体器件的方法 |
Related Parent Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201310393395.1A Division CN103681352B (zh) | 2012-09-04 | 2013-09-03 | 用于制造半导体器件的方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN108198817A CN108198817A (zh) | 2018-06-22 |
CN108198817B true CN108198817B (zh) | 2021-12-24 |
Family
ID=50188124
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201711466698.6A Active CN108198817B (zh) | 2012-09-04 | 2013-09-03 | 用于制造半导体器件的方法 |
CN201310393395.1A Active CN103681352B (zh) | 2012-09-04 | 2013-09-03 | 用于制造半导体器件的方法 |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201310393395.1A Active CN103681352B (zh) | 2012-09-04 | 2013-09-03 | 用于制造半导体器件的方法 |
Country Status (4)
Country | Link |
---|---|
US (6) | US8846471B2 (ja) |
JP (1) | JP5936959B2 (ja) |
CN (2) | CN108198817B (ja) |
TW (5) | TWI652827B (ja) |
Families Citing this family (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US8890260B2 (en) | 2009-09-04 | 2014-11-18 | Taiwan Semiconductor Manufacturing Company, Ltd. | Polysilicon design for replacement gate technology |
JP6026914B2 (ja) * | 2013-02-12 | 2016-11-16 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
US9076735B2 (en) * | 2013-11-27 | 2015-07-07 | Globalfoundries Singapore Pte. Ltd. | Methods for fabricating integrated circuits using chemical mechanical polishing |
US9281213B2 (en) * | 2013-12-30 | 2016-03-08 | Texas Instruments Incorporated | High precision capacitor dielectric |
US10332882B2 (en) * | 2013-12-30 | 2019-06-25 | Taiwan Semiconductor Manufacturing Co., Ltd. | Semiconductor device having protective structure over shallow trench isolation region and fabricating method thereof |
JP2015185613A (ja) * | 2014-03-20 | 2015-10-22 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
US9590059B2 (en) * | 2014-12-24 | 2017-03-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | Interdigitated capacitor to integrate with flash memory |
US9397112B1 (en) * | 2015-02-06 | 2016-07-19 | Taiwan Semiconductor Manufacturing Co., Ltd. | L-shaped capacitor in thin film storage technology |
JP6466211B2 (ja) * | 2015-03-11 | 2019-02-06 | ルネサスエレクトロニクス株式会社 | 半導体装置およびその製造方法 |
JP2017037986A (ja) * | 2015-08-11 | 2017-02-16 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
CN106571362B (zh) * | 2015-10-13 | 2019-07-26 | 中芯国际集成电路制造(上海)有限公司 | 一种半导体器件及其制造方法和电子装置 |
JP6620046B2 (ja) * | 2016-03-15 | 2019-12-11 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法および半導体装置 |
JP6885779B2 (ja) | 2017-04-28 | 2021-06-16 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US10872898B2 (en) * | 2017-07-19 | 2020-12-22 | Cypress Semiconductor Corporation | Embedded non-volatile memory device and fabrication method of the same |
CN109427785B (zh) * | 2017-08-21 | 2022-09-27 | 联华电子股份有限公司 | 包含电容的装置及其形成方法 |
US10622073B2 (en) * | 2018-05-11 | 2020-04-14 | Texas Instruments Incorporated | Integrated circuit including vertical capacitors |
CN108831829B (zh) * | 2018-06-19 | 2020-10-27 | 上海华力微电子有限公司 | 一种分裂栅结构下的侧墙栅极隔离刻蚀膜层工艺 |
JP2021027205A (ja) * | 2019-08-06 | 2021-02-22 | キオクシア株式会社 | 半導体記憶装置及びその製造方法 |
CN110767658A (zh) * | 2019-10-30 | 2020-02-07 | 上海华力微电子有限公司 | 闪存器件的形成方法 |
US11826601B1 (en) * | 2020-01-25 | 2023-11-28 | Bertec Corporation | Cable actuation system |
CN113013256A (zh) * | 2021-02-04 | 2021-06-22 | 上海华力集成电路制造有限公司 | 分栅monos闪存及其制造方法 |
CN113629036B (zh) * | 2021-08-06 | 2024-02-27 | 武汉新芯集成电路制造有限公司 | 半导体器件及其制造方法 |
Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101409283A (zh) * | 2007-10-08 | 2009-04-15 | 台湾积体电路制造股份有限公司 | 半导体结构 |
JP2009253037A (ja) * | 2008-04-07 | 2009-10-29 | Toshiba Corp | 半導体装置及び半導体装置の製造方法 |
CN102403274A (zh) * | 2007-08-06 | 2012-04-04 | 美商矽储科技股份有限公司 | 非易失性闪速存储单元、阵列及其制造方法 |
Family Cites Families (16)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JP4068746B2 (ja) * | 1998-12-25 | 2008-03-26 | 株式会社ルネサステクノロジ | 半導体集積回路装置 |
JP2000252422A (ja) | 1999-02-25 | 2000-09-14 | Iwate Toshiba Electronics Kk | 半導体装置及びその製造方法 |
JP2001057394A (ja) * | 1999-06-09 | 2001-02-27 | Matsushita Electric Ind Co Ltd | 不揮発性半導体記憶装置及びその製造方法 |
JP3907921B2 (ja) * | 2000-06-19 | 2007-04-18 | 富士通株式会社 | 半導体装置の製造方法 |
KR100363091B1 (ko) * | 2000-06-27 | 2002-11-30 | 삼성전자 주식회사 | 자기정합 콘택을 갖는 반도체 메모리소자 및 그 제조방법 |
JP4003031B2 (ja) * | 2000-09-04 | 2007-11-07 | セイコーエプソン株式会社 | 半導体装置の製造方法 |
JP3851914B2 (ja) * | 2003-07-09 | 2006-11-29 | 株式会社東芝 | 不揮発性半導体記憶装置 |
JP5142494B2 (ja) * | 2006-08-03 | 2013-02-13 | ルネサスエレクトロニクス株式会社 | 半導体装置の製造方法 |
US7524719B2 (en) * | 2006-08-31 | 2009-04-28 | Freescale Semiconductor, Inc. | Method of making self-aligned split gate memory cell |
JP5314873B2 (ja) * | 2007-10-05 | 2013-10-16 | ルネサスエレクトロニクス株式会社 | 半導体装置 |
US7732872B2 (en) * | 2007-10-25 | 2010-06-08 | International Business Machines Corporation | Integration scheme for multiple metal gate work function structures |
JP5521555B2 (ja) | 2008-02-20 | 2014-06-18 | 日本電気株式会社 | 不揮発性記憶装置およびその製造方法 |
JP2009302269A (ja) | 2008-06-13 | 2009-12-24 | Renesas Technology Corp | 半導体装置の製造方法および半導体装置 |
KR100976797B1 (ko) * | 2008-06-20 | 2010-08-20 | 주식회사 동부하이텍 | 반도체 소자의 제조 방법 |
JP2012114269A (ja) * | 2010-11-25 | 2012-06-14 | Renesas Electronics Corp | 半導体装置および半導体装置の製造方法 |
US8878338B2 (en) * | 2012-05-31 | 2014-11-04 | Taiwan Semiconductor Manufacturing Company, Ltd. | Capacitor for interposers and methods of manufacture thereof |
-
2012
- 2012-09-04 JP JP2012194420A patent/JP5936959B2/ja active Active
-
2013
- 2013-08-12 US US13/964,576 patent/US8846471B2/en active Active
- 2013-08-14 TW TW107102678A patent/TWI652827B/zh active
- 2013-08-14 TW TW102129182A patent/TWI601292B/zh active
- 2013-08-14 TW TW108102164A patent/TWI691087B/zh active
- 2013-08-14 TW TW109107520A patent/TWI752431B/zh active
- 2013-08-14 TW TW106122912A patent/TWI631714B/zh active
- 2013-09-03 CN CN201711466698.6A patent/CN108198817B/zh active Active
- 2013-09-03 CN CN201310393395.1A patent/CN103681352B/zh active Active
-
2014
- 2014-08-22 US US14/466,092 patent/US9214570B2/en active Active
-
2015
- 2015-10-23 US US14/921,445 patent/US9608091B2/en active Active
-
2017
- 2017-02-10 US US15/429,512 patent/US9847328B2/en active Active
- 2017-10-24 US US15/792,009 patent/US10109622B2/en active Active
-
2018
- 2018-09-10 US US16/125,857 patent/US10573642B2/en active Active
Patent Citations (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102403274A (zh) * | 2007-08-06 | 2012-04-04 | 美商矽储科技股份有限公司 | 非易失性闪速存储单元、阵列及其制造方法 |
CN101409283A (zh) * | 2007-10-08 | 2009-04-15 | 台湾积体电路制造股份有限公司 | 半导体结构 |
JP2009253037A (ja) * | 2008-04-07 | 2009-10-29 | Toshiba Corp | 半導体装置及び半導体装置の製造方法 |
Also Published As
Publication number | Publication date |
---|---|
CN108198817A (zh) | 2018-06-22 |
CN103681352B (zh) | 2018-01-12 |
TW201735372A (zh) | 2017-10-01 |
TWI752431B (zh) | 2022-01-11 |
US20160043200A1 (en) | 2016-02-11 |
US20190006353A1 (en) | 2019-01-03 |
US9608091B2 (en) | 2017-03-28 |
US20140361361A1 (en) | 2014-12-11 |
US20170154884A1 (en) | 2017-06-01 |
JP2014049735A (ja) | 2014-03-17 |
TW201817015A (zh) | 2018-05-01 |
US8846471B2 (en) | 2014-09-30 |
TWI631714B (zh) | 2018-08-01 |
TW202025497A (zh) | 2020-07-01 |
CN103681352A (zh) | 2014-03-26 |
US20140065776A1 (en) | 2014-03-06 |
US9214570B2 (en) | 2015-12-15 |
US10109622B2 (en) | 2018-10-23 |
TWI601292B (zh) | 2017-10-01 |
US20180047723A1 (en) | 2018-02-15 |
JP5936959B2 (ja) | 2016-06-22 |
TW201413966A (zh) | 2014-04-01 |
TWI691087B (zh) | 2020-04-11 |
US10573642B2 (en) | 2020-02-25 |
TW201935696A (zh) | 2019-09-01 |
US9847328B2 (en) | 2017-12-19 |
TWI652827B (zh) | 2019-03-01 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN108198817B (zh) | 用于制造半导体器件的方法 | |
US11393838B2 (en) | Semiconductor device and manufacturing method thereof | |
JP5191633B2 (ja) | 半導体装置およびその製造方法 | |
US9954120B2 (en) | Semiconductor device and a manufacturing method thereof | |
US9543314B2 (en) | Manufacturing method of semiconductor device and semiconductor device | |
US9905429B2 (en) | Semiconductor device and a manufacturing method thereof | |
US10090399B2 (en) | Semiconductor device and a manufacturing method thereof | |
US9520504B2 (en) | Semiconductor device and method of manufacturing the same | |
CN105655339B (zh) | 半导体器件及其制造方法 | |
KR20180035129A (ko) | 반도체 장치 및 반도체 장치의 제조 방법 | |
JP2016165010A (ja) | 半導体装置 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
GR01 | Patent grant | ||
GR01 | Patent grant |