CN108141917B - 加热器单元 - Google Patents

加热器单元 Download PDF

Info

Publication number
CN108141917B
CN108141917B CN201680059985.2A CN201680059985A CN108141917B CN 108141917 B CN108141917 B CN 108141917B CN 201680059985 A CN201680059985 A CN 201680059985A CN 108141917 B CN108141917 B CN 108141917B
Authority
CN
China
Prior art keywords
heater
groove
heater unit
substrate
base material
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201680059985.2A
Other languages
English (en)
Chinese (zh)
Other versions
CN108141917A (zh
Inventor
花待年彦
相川尚哉
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Japan Clockwork Co ltd
Original Assignee
Japan Clockwork Co ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Japan Clockwork Co ltd filed Critical Japan Clockwork Co ltd
Publication of CN108141917A publication Critical patent/CN108141917A/zh
Application granted granted Critical
Publication of CN108141917B publication Critical patent/CN108141917B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
    • H05B3/18—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor the conductor being embedded in an insulating material
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/20—Heating elements having extended surface area substantially in a two-dimensional [2D] plane, e.g. plate-heater
    • H05B3/22—Heating elements having extended surface area substantially in a two-dimensional [2D] plane, e.g. plate-heater non-flexible
    • H05B3/28—Heating elements having extended surface area substantially in a two-dimensional [2D] plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/68—Heating arrangements specially adapted for cooking plates or analogous hot-plates
    • H05B3/74—Non-metallic plates, e.g. vitroceramic, ceramic or glassceramic hobs, also including power or control circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Resistance Heating (AREA)
  • Drying Of Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Physical Vapour Deposition (AREA)
CN201680059985.2A 2015-10-26 2016-09-28 加热器单元 Active CN108141917B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2015209886A JP6584286B2 (ja) 2015-10-26 2015-10-26 ヒータユニット
JP2015-209886 2015-10-26
PCT/JP2016/078575 WO2017073230A1 (ja) 2015-10-26 2016-09-28 ヒータユニット

Publications (2)

Publication Number Publication Date
CN108141917A CN108141917A (zh) 2018-06-08
CN108141917B true CN108141917B (zh) 2020-12-22

Family

ID=58630349

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201680059985.2A Active CN108141917B (zh) 2015-10-26 2016-09-28 加热器单元

Country Status (7)

Country Link
US (1) US10290529B2 (enExample)
EP (1) EP3370477B1 (enExample)
JP (1) JP6584286B2 (enExample)
KR (1) KR102093048B1 (enExample)
CN (1) CN108141917B (enExample)
TW (1) TWI629727B (enExample)
WO (1) WO2017073230A1 (enExample)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7133992B2 (ja) * 2018-06-07 2022-09-09 東京エレクトロン株式会社 基板載置台及び基板処理装置
KR20200023988A (ko) * 2018-08-27 2020-03-06 삼성전자주식회사 정전 척 및 상기 정전 척을 탑재한 웨이퍼 식각 장치
JP7594852B2 (ja) * 2018-10-11 2024-12-05 日本発條株式会社 ステージ、成膜装置、および膜加工装置
JP7199200B2 (ja) * 2018-11-01 2023-01-05 東京エレクトロン株式会社 基板載置台、基板処理装置及び基板処理方法
US11199562B2 (en) 2019-08-08 2021-12-14 Western Digital Technologies, Inc. Wafer testing system including a wafer-flattening multi-zone vacuum chuck and method for operating the same
JPWO2021039497A1 (enExample) * 2019-08-29 2021-03-04
JP7401279B2 (ja) * 2019-12-06 2023-12-19 株式会社アドバンテック 対象物を加熱及び冷却するためのステージ
CN115152322B (zh) * 2020-02-26 2026-02-17 日本碍子株式会社 陶瓷加热器及其制法
KR102677038B1 (ko) * 2020-05-22 2024-06-19 세메스 주식회사 정전 척과 그 제조 방법 및 기판 처리 장치
JP7613848B2 (ja) * 2020-06-23 2025-01-15 日本特殊陶業株式会社 保持装置
EP3982398A1 (en) * 2020-10-06 2022-04-13 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk Onderzoek TNO Controlled local heating of substrates
KR102635167B1 (ko) * 2021-04-26 2024-02-13 주식회사 이에스티 코팅 타입 고온 정전척
CN221202786U (zh) * 2021-05-04 2024-06-21 沃特洛电气制造公司 带有嵌入式电阻加热器的金属加热器组件
JP7638152B2 (ja) * 2021-05-17 2025-03-03 日本特殊陶業株式会社 保持装置
KR102381360B1 (ko) * 2021-07-05 2022-04-01 한국세라믹기술원 균일한 온도분포를 갖는 히터
KR102888651B1 (ko) * 2021-09-30 2025-11-19 세메스 주식회사 기판 처리 장치
JP7628979B2 (ja) * 2022-03-17 2025-02-12 日本碍子株式会社 高抵抗・高耐食セラミックス材料及びウエハ載置台
JP2023149343A (ja) * 2022-03-31 2023-10-13 日本特殊陶業株式会社 電極埋設部材、および基板保持部材
JP2023169797A (ja) * 2022-05-17 2023-11-30 日本特殊陶業株式会社 電極埋設部材、および基板保持部材
GB2621859A (en) * 2022-08-24 2024-02-28 Dyson Technology Ltd Heating element, heating system & manufacturing method
JP2024051933A (ja) * 2022-09-30 2024-04-11 日本発條株式会社 ステージ
JP2024051768A (ja) * 2022-09-30 2024-04-11 日本発條株式会社 ステージ
WO2024180642A1 (ja) * 2023-02-28 2024-09-06 株式会社日立ハイテク プラズマ処理装置およびプラズマ処理装置の試料台の製造方法

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1507503A (zh) * 2002-04-16 2004-06-23 ���������ƴ���ʽ���� 处理装置、处理方法及载置部件
CN1551293A (zh) * 2003-05-12 2004-12-01 ���������ƴ���ʽ���� 处理装置
CN1835205A (zh) * 2005-03-18 2006-09-20 东京毅力科创株式会社 基板载放台、基板处理装置以及基板处理方法
JP2008251707A (ja) * 2007-03-29 2008-10-16 Nihon Ceratec Co Ltd セラミックスヒーター
JP2010141081A (ja) * 2008-12-11 2010-06-24 Toyota Motor Corp ウェハ処理装置
CN102197156A (zh) * 2008-11-12 2011-09-21 朗姆研究公司 由液体控制的多区基片支座改进的基片温度控制
CN102822948A (zh) * 2010-03-25 2012-12-12 东京毅力科创株式会社 区域温度控制结构体
CN104272450A (zh) * 2012-05-07 2015-01-07 东华隆株式会社 静电夹具和静电夹具的制造方法

Family Cites Families (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2002184557A (ja) * 2000-12-12 2002-06-28 Ibiden Co Ltd 半導体製造・検査装置用ヒータ
JP4397271B2 (ja) * 2003-05-12 2010-01-13 東京エレクトロン株式会社 処理装置
JP2006024433A (ja) * 2004-07-07 2006-01-26 Ibiden Co Ltd セラミックヒータ
US20060027169A1 (en) * 2004-08-06 2006-02-09 Tokyo Electron Limited Method and system for substrate temperature profile control
JP2006216822A (ja) * 2005-02-04 2006-08-17 Hitachi High-Technologies Corp ウェハ処理装置およびウェハ処理方法
US7815740B2 (en) * 2005-03-18 2010-10-19 Tokyo Electron Limited Substrate mounting table, substrate processing apparatus and substrate processing method
JP2007067036A (ja) * 2005-08-30 2007-03-15 Hitachi High-Technologies Corp 真空処理装置
JP5203612B2 (ja) * 2007-01-17 2013-06-05 株式会社日立ハイテクノロジーズ プラズマ処理装置
JP5101665B2 (ja) * 2010-06-30 2012-12-19 東京エレクトロン株式会社 基板載置台、基板処理装置および基板処理システム
US8809747B2 (en) * 2012-04-13 2014-08-19 Lam Research Corporation Current peak spreading schemes for multiplexed heated array
US20150113826A1 (en) 2012-06-13 2015-04-30 Tokyo Electron Limited Substrate placing table and substrate processing apparatus
JP6001402B2 (ja) * 2012-09-28 2016-10-05 日本特殊陶業株式会社 静電チャック
JP5633766B2 (ja) 2013-03-29 2014-12-03 Toto株式会社 静電チャック

Patent Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1507503A (zh) * 2002-04-16 2004-06-23 ���������ƴ���ʽ���� 处理装置、处理方法及载置部件
CN1551293A (zh) * 2003-05-12 2004-12-01 ���������ƴ���ʽ���� 处理装置
CN1835205A (zh) * 2005-03-18 2006-09-20 东京毅力科创株式会社 基板载放台、基板处理装置以及基板处理方法
JP2008251707A (ja) * 2007-03-29 2008-10-16 Nihon Ceratec Co Ltd セラミックスヒーター
CN102197156A (zh) * 2008-11-12 2011-09-21 朗姆研究公司 由液体控制的多区基片支座改进的基片温度控制
JP2010141081A (ja) * 2008-12-11 2010-06-24 Toyota Motor Corp ウェハ処理装置
CN102822948A (zh) * 2010-03-25 2012-12-12 东京毅力科创株式会社 区域温度控制结构体
CN104272450A (zh) * 2012-05-07 2015-01-07 东华隆株式会社 静电夹具和静电夹具的制造方法

Also Published As

Publication number Publication date
US10290529B2 (en) 2019-05-14
JP2017084523A (ja) 2017-05-18
US20180226285A1 (en) 2018-08-09
CN108141917A (zh) 2018-06-08
KR20180044336A (ko) 2018-05-02
TW201715614A (zh) 2017-05-01
KR102093048B1 (ko) 2020-03-24
WO2017073230A1 (ja) 2017-05-04
EP3370477B1 (en) 2021-11-03
JP6584286B2 (ja) 2019-10-02
EP3370477A1 (en) 2018-09-05
TWI629727B (zh) 2018-07-11
EP3370477A4 (en) 2019-02-27

Similar Documents

Publication Publication Date Title
CN108141917B (zh) 加热器单元
KR102244625B1 (ko) 온도 프로파일 제어를 갖는 가열식 기판 지지부
TWI702685B (zh) 極端均勻加熱基板支撐組件
JP6108051B1 (ja) 静電チャック装置
JP6333285B2 (ja) 基板処理チャンバ構成要素用の熱放射バリア
WO2017026206A1 (ja) ヒータユニット
JP6489195B1 (ja) 静電チャック装置
CN105009686A (zh) 具有低热膨胀系数的顶部的基座结构
US20160083840A1 (en) Graphite susceptor
CN105849866A (zh) 具有宽范围操作温度的pecvd陶瓷加热器
JP4328009B2 (ja) 加熱装置
JP2016184645A (ja) 静電チャック装置
US20190177847A1 (en) Wafer loading apparatus and film forming apparatus
JP6296770B2 (ja) 基板載置装置
JP7628881B2 (ja) 保持装置
CN114026957B (zh) 带轴的陶瓷加热器
JP6789081B2 (ja) 保持装置
TW202503972A (zh) 靜電吸盤
TW202518667A (zh) 靜電吸盤及其製造方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant