KR102093048B1 - 히터 유닛 - Google Patents

히터 유닛 Download PDF

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Publication number
KR102093048B1
KR102093048B1 KR1020187008003A KR20187008003A KR102093048B1 KR 102093048 B1 KR102093048 B1 KR 102093048B1 KR 1020187008003 A KR1020187008003 A KR 1020187008003A KR 20187008003 A KR20187008003 A KR 20187008003A KR 102093048 B1 KR102093048 B1 KR 102093048B1
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KR
South Korea
Prior art keywords
heater unit
substrate
heater
trench
insulating layer
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
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KR1020187008003A
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English (en)
Korean (ko)
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KR20180044336A (ko
Inventor
토시히코 하나마치
나오야 아이카와
Original Assignee
닛폰 하츠죠 가부시키가이샤
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Publication of KR20180044336A publication Critical patent/KR20180044336A/ko
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    • H01L21/67098—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • H01L21/67017—
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
    • H05B3/18—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor the conductor being embedded in an insulating material
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/20—Heating elements having extended surface area substantially in a two-dimensional [2D] plane, e.g. plate-heater
    • H05B3/22—Heating elements having extended surface area substantially in a two-dimensional [2D] plane, e.g. plate-heater non-flexible
    • H05B3/28—Heating elements having extended surface area substantially in a two-dimensional [2D] plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/68—Heating arrangements specially adapted for cooking plates or analogous hot-plates
    • H05B3/74—Non-metallic plates, e.g. vitroceramic, ceramic or glassceramic hobs, also including power or control circuits
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0402—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0431—Apparatus for thermal treatment
    • H10P72/0432—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P95/00—Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Ceramic Engineering (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Resistance Heating (AREA)
  • Drying Of Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Plasma & Fusion (AREA)
  • Physical Vapour Deposition (AREA)
KR1020187008003A 2015-10-26 2016-09-28 히터 유닛 Active KR102093048B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2015209886A JP6584286B2 (ja) 2015-10-26 2015-10-26 ヒータユニット
JPJP-P-2015-209886 2015-10-26
PCT/JP2016/078575 WO2017073230A1 (ja) 2015-10-26 2016-09-28 ヒータユニット

Publications (2)

Publication Number Publication Date
KR20180044336A KR20180044336A (ko) 2018-05-02
KR102093048B1 true KR102093048B1 (ko) 2020-03-24

Family

ID=58630349

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020187008003A Active KR102093048B1 (ko) 2015-10-26 2016-09-28 히터 유닛

Country Status (7)

Country Link
US (1) US10290529B2 (enExample)
EP (1) EP3370477B1 (enExample)
JP (1) JP6584286B2 (enExample)
KR (1) KR102093048B1 (enExample)
CN (1) CN108141917B (enExample)
TW (1) TWI629727B (enExample)
WO (1) WO2017073230A1 (enExample)

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* Cited by examiner, † Cited by third party
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JP7133992B2 (ja) * 2018-06-07 2022-09-09 東京エレクトロン株式会社 基板載置台及び基板処理装置
KR20200023988A (ko) * 2018-08-27 2020-03-06 삼성전자주식회사 정전 척 및 상기 정전 척을 탑재한 웨이퍼 식각 장치
JP7594852B2 (ja) * 2018-10-11 2024-12-05 日本発條株式会社 ステージ、成膜装置、および膜加工装置
JP7199200B2 (ja) * 2018-11-01 2023-01-05 東京エレクトロン株式会社 基板載置台、基板処理装置及び基板処理方法
US11199562B2 (en) 2019-08-08 2021-12-14 Western Digital Technologies, Inc. Wafer testing system including a wafer-flattening multi-zone vacuum chuck and method for operating the same
JPWO2021039497A1 (enExample) * 2019-08-29 2021-03-04
JP7401279B2 (ja) * 2019-12-06 2023-12-19 株式会社アドバンテック 対象物を加熱及び冷却するためのステージ
CN115152322B (zh) * 2020-02-26 2026-02-17 日本碍子株式会社 陶瓷加热器及其制法
KR102677038B1 (ko) * 2020-05-22 2024-06-19 세메스 주식회사 정전 척과 그 제조 방법 및 기판 처리 장치
JP7613848B2 (ja) * 2020-06-23 2025-01-15 日本特殊陶業株式会社 保持装置
EP3982398A1 (en) * 2020-10-06 2022-04-13 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk Onderzoek TNO Controlled local heating of substrates
KR102635167B1 (ko) * 2021-04-26 2024-02-13 주식회사 이에스티 코팅 타입 고온 정전척
CN221202786U (zh) * 2021-05-04 2024-06-21 沃特洛电气制造公司 带有嵌入式电阻加热器的金属加热器组件
JP7638152B2 (ja) * 2021-05-17 2025-03-03 日本特殊陶業株式会社 保持装置
KR102381360B1 (ko) * 2021-07-05 2022-04-01 한국세라믹기술원 균일한 온도분포를 갖는 히터
KR102888651B1 (ko) * 2021-09-30 2025-11-19 세메스 주식회사 기판 처리 장치
JP7628979B2 (ja) * 2022-03-17 2025-02-12 日本碍子株式会社 高抵抗・高耐食セラミックス材料及びウエハ載置台
JP2023149343A (ja) * 2022-03-31 2023-10-13 日本特殊陶業株式会社 電極埋設部材、および基板保持部材
JP2023169797A (ja) * 2022-05-17 2023-11-30 日本特殊陶業株式会社 電極埋設部材、および基板保持部材
GB2621859A (en) * 2022-08-24 2024-02-28 Dyson Technology Ltd Heating element, heating system & manufacturing method
JP2024051933A (ja) * 2022-09-30 2024-04-11 日本発條株式会社 ステージ
JP2024051768A (ja) * 2022-09-30 2024-04-11 日本発條株式会社 ステージ
WO2024180642A1 (ja) * 2023-02-28 2024-09-06 株式会社日立ハイテク プラズマ処理装置およびプラズマ処理装置の試料台の製造方法

Citations (2)

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JP2006261541A (ja) * 2005-03-18 2006-09-28 Tokyo Electron Ltd 基板載置台、基板処理装置および基板処理方法
JP2010141081A (ja) 2008-12-11 2010-06-24 Toyota Motor Corp ウェハ処理装置

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JP2002184557A (ja) * 2000-12-12 2002-06-28 Ibiden Co Ltd 半導体製造・検査装置用ヒータ
JP4067858B2 (ja) * 2002-04-16 2008-03-26 東京エレクトロン株式会社 Ａｌｄ成膜装置およびａｌｄ成膜方法
US20050042881A1 (en) 2003-05-12 2005-02-24 Tokyo Electron Limited Processing apparatus
JP4397271B2 (ja) * 2003-05-12 2010-01-13 東京エレクトロン株式会社 処理装置
JP2006024433A (ja) * 2004-07-07 2006-01-26 Ibiden Co Ltd セラミックヒータ
US20060027169A1 (en) * 2004-08-06 2006-02-09 Tokyo Electron Limited Method and system for substrate temperature profile control
JP2006216822A (ja) * 2005-02-04 2006-08-17 Hitachi High-Technologies Corp ウェハ処理装置およびウェハ処理方法
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JP2006261541A (ja) * 2005-03-18 2006-09-28 Tokyo Electron Ltd 基板載置台、基板処理装置および基板処理方法
JP2010141081A (ja) 2008-12-11 2010-06-24 Toyota Motor Corp ウェハ処理装置

Also Published As

Publication number Publication date
US10290529B2 (en) 2019-05-14
JP2017084523A (ja) 2017-05-18
US20180226285A1 (en) 2018-08-09
CN108141917B (zh) 2020-12-22
CN108141917A (zh) 2018-06-08
KR20180044336A (ko) 2018-05-02
TW201715614A (zh) 2017-05-01
WO2017073230A1 (ja) 2017-05-04
EP3370477B1 (en) 2021-11-03
JP6584286B2 (ja) 2019-10-02
EP3370477A1 (en) 2018-09-05
TWI629727B (zh) 2018-07-11
EP3370477A4 (en) 2019-02-27

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