KR102093048B1 - 히터 유닛 - Google Patents

히터 유닛 Download PDF

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Publication number
KR102093048B1
KR102093048B1 KR1020187008003A KR20187008003A KR102093048B1 KR 102093048 B1 KR102093048 B1 KR 102093048B1 KR 1020187008003 A KR1020187008003 A KR 1020187008003A KR 20187008003 A KR20187008003 A KR 20187008003A KR 102093048 B1 KR102093048 B1 KR 102093048B1
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KR
South Korea
Prior art keywords
heater unit
substrate
heater
trench
insulating layer
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KR1020187008003A
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English (en)
Korean (ko)
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KR20180044336A (ko
Inventor
토시히코 하나마치
나오야 아이카와
Original Assignee
닛폰 하츠죠 가부시키가이샤
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Publication of KR20180044336A publication Critical patent/KR20180044336A/ko
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H01L21/67103—Apparatus for thermal treatment mainly by conduction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/10—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor
    • H05B3/18—Heating elements characterised by the composition or nature of the materials or by the arrangement of the conductor the conductor being embedded in an insulating material
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/20—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater
    • H05B3/22—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible
    • H05B3/28—Heating elements having extended surface area substantially in a two-dimensional plane, e.g. plate-heater non-flexible heating conductor embedded in insulating material
    • H—ELECTRICITY
    • H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
    • H05B—ELECTRIC HEATING; ELECTRIC LIGHT SOURCES NOT OTHERWISE PROVIDED FOR; CIRCUIT ARRANGEMENTS FOR ELECTRIC LIGHT SOURCES, IN GENERAL
    • H05B3/00—Ohmic-resistance heating
    • H05B3/68—Heating arrangements specially adapted for cooking plates or analogous hot-plates
    • H05B3/74—Non-metallic plates, e.g. vitroceramic, ceramic or glassceramic hobs, also including power or control circuits

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Chemical & Material Sciences (AREA)
  • Ceramic Engineering (AREA)
  • Plasma & Fusion (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Resistance Heating (AREA)
  • Drying Of Semiconductors (AREA)
  • Physical Vapour Deposition (AREA)
KR1020187008003A 2015-10-26 2016-09-28 히터 유닛 Active KR102093048B1 (ko)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JPJP-P-2015-209886 2015-10-26
JP2015209886A JP6584286B2 (ja) 2015-10-26 2015-10-26 ヒータユニット
PCT/JP2016/078575 WO2017073230A1 (ja) 2015-10-26 2016-09-28 ヒータユニット

Publications (2)

Publication Number Publication Date
KR20180044336A KR20180044336A (ko) 2018-05-02
KR102093048B1 true KR102093048B1 (ko) 2020-03-24

Family

ID=58630349

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1020187008003A Active KR102093048B1 (ko) 2015-10-26 2016-09-28 히터 유닛

Country Status (7)

Country Link
US (1) US10290529B2 (enExample)
EP (1) EP3370477B1 (enExample)
JP (1) JP6584286B2 (enExample)
KR (1) KR102093048B1 (enExample)
CN (1) CN108141917B (enExample)
TW (1) TWI629727B (enExample)
WO (1) WO2017073230A1 (enExample)

Families Citing this family (23)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7133992B2 (ja) * 2018-06-07 2022-09-09 東京エレクトロン株式会社 基板載置台及び基板処理装置
KR20200023988A (ko) 2018-08-27 2020-03-06 삼성전자주식회사 정전 척 및 상기 정전 척을 탑재한 웨이퍼 식각 장치
JP7594852B2 (ja) * 2018-10-11 2024-12-05 日本発條株式会社 ステージ、成膜装置、および膜加工装置
JP7199200B2 (ja) * 2018-11-01 2023-01-05 東京エレクトロン株式会社 基板載置台、基板処理装置及び基板処理方法
US11199562B2 (en) 2019-08-08 2021-12-14 Western Digital Technologies, Inc. Wafer testing system including a wafer-flattening multi-zone vacuum chuck and method for operating the same
JPWO2021039497A1 (enExample) * 2019-08-29 2021-03-04
JP7401279B2 (ja) * 2019-12-06 2023-12-19 株式会社アドバンテック 対象物を加熱及び冷却するためのステージ
JP7284339B2 (ja) * 2020-02-26 2023-05-30 日本碍子株式会社 セラミックヒータ及びその製法
KR102677038B1 (ko) * 2020-05-22 2024-06-19 세메스 주식회사 정전 척과 그 제조 방법 및 기판 처리 장치
JP7613848B2 (ja) * 2020-06-23 2025-01-15 日本特殊陶業株式会社 保持装置
EP3982398A1 (en) * 2020-10-06 2022-04-13 Nederlandse Organisatie voor toegepast- natuurwetenschappelijk Onderzoek TNO Controlled local heating of substrates
KR102635167B1 (ko) * 2021-04-26 2024-02-13 주식회사 이에스티 코팅 타입 고온 정전척
TWI876156B (zh) * 2021-05-04 2025-03-11 美商瓦特洛威電子製造公司 具有嵌入式電阻式加熱器之金屬加熱器總成
JP7638152B2 (ja) * 2021-05-17 2025-03-03 日本特殊陶業株式会社 保持装置
KR102381360B1 (ko) * 2021-07-05 2022-04-01 한국세라믹기술원 균일한 온도분포를 갖는 히터
KR102888651B1 (ko) 2021-09-30 2025-11-19 세메스 주식회사 기판 처리 장치
JP7628979B2 (ja) * 2022-03-17 2025-02-12 日本碍子株式会社 高抵抗・高耐食セラミックス材料及びウエハ載置台
JP2023149343A (ja) * 2022-03-31 2023-10-13 日本特殊陶業株式会社 電極埋設部材、および基板保持部材
JP2023169797A (ja) * 2022-05-17 2023-11-30 日本特殊陶業株式会社 電極埋設部材、および基板保持部材
GB2621859A (en) * 2022-08-24 2024-02-28 Dyson Technology Ltd Heating element, heating system & manufacturing method
JP2024051768A (ja) * 2022-09-30 2024-04-11 日本発條株式会社 ステージ
JP2024051933A (ja) * 2022-09-30 2024-04-11 日本発條株式会社 ステージ
WO2024180642A1 (ja) * 2023-02-28 2024-09-06 株式会社日立ハイテク プラズマ処理装置およびプラズマ処理装置の試料台の製造方法

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JP2006261541A (ja) * 2005-03-18 2006-09-28 Tokyo Electron Ltd 基板載置台、基板処理装置および基板処理方法
JP2010141081A (ja) 2008-12-11 2010-06-24 Toyota Motor Corp ウェハ処理装置

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JP2002184557A (ja) * 2000-12-12 2002-06-28 Ibiden Co Ltd 半導体製造・検査装置用ヒータ
JP4067858B2 (ja) * 2002-04-16 2008-03-26 東京エレクトロン株式会社 Ａｌｄ成膜装置およびａｌｄ成膜方法
JP4397271B2 (ja) * 2003-05-12 2010-01-13 東京エレクトロン株式会社 処理装置
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JP5101665B2 (ja) 2010-06-30 2012-12-19 東京エレクトロン株式会社 基板載置台、基板処理装置および基板処理システム
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JP2006261541A (ja) * 2005-03-18 2006-09-28 Tokyo Electron Ltd 基板載置台、基板処理装置および基板処理方法
JP2010141081A (ja) 2008-12-11 2010-06-24 Toyota Motor Corp ウェハ処理装置

Also Published As

Publication number Publication date
KR20180044336A (ko) 2018-05-02
CN108141917A (zh) 2018-06-08
TW201715614A (zh) 2017-05-01
EP3370477A4 (en) 2019-02-27
CN108141917B (zh) 2020-12-22
EP3370477B1 (en) 2021-11-03
JP2017084523A (ja) 2017-05-18
US10290529B2 (en) 2019-05-14
EP3370477A1 (en) 2018-09-05
US20180226285A1 (en) 2018-08-09
WO2017073230A1 (ja) 2017-05-04
TWI629727B (zh) 2018-07-11
JP6584286B2 (ja) 2019-10-02

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