CN108110023B - 半导体器件和电子器件 - Google Patents

半导体器件和电子器件 Download PDF

Info

Publication number
CN108110023B
CN108110023B CN201810048763.1A CN201810048763A CN108110023B CN 108110023 B CN108110023 B CN 108110023B CN 201810048763 A CN201810048763 A CN 201810048763A CN 108110023 B CN108110023 B CN 108110023B
Authority
CN
China
Prior art keywords
wiring
semiconductor device
alloy
semiconductor wafer
conductive portion
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201810048763.1A
Other languages
English (en)
Chinese (zh)
Other versions
CN108110023A (zh
Inventor
清水完
井上启司
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Sony Corp
Original Assignee
Sony Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Sony Corp filed Critical Sony Corp
Publication of CN108110023A publication Critical patent/CN108110023A/zh
Application granted granted Critical
Publication of CN108110023B publication Critical patent/CN108110023B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/811—Interconnections
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H10W20/0234—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias comprising etching via holes that stop on pads or on electrodes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00—Interconnections in chips, wafers or substrates
    • H10W20/01—Manufacture or treatment
    • H10W20/021—Manufacture or treatment of interconnections within wafers or substrates
    • H10W20/023—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias
    • H10W20/0242—Manufacture or treatment of interconnections within wafers or substrates the interconnections being through-semiconductor vias comprising etching via holes from the back sides of the chips, wafers or substrates
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W72/00—Interconnections or connectors in packages
    • H10W72/01—Manufacture or treatment
    • H10W72/0198—Manufacture or treatment batch processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10W—GENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W99/00—Subject matter not provided for in other groups of this subclass

Landscapes

  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Solid State Image Pick-Up Elements (AREA)
CN201810048763.1A 2011-09-30 2012-09-21 半导体器件和电子器件 Active CN108110023B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2011-216930 2011-09-30
JP2011216930A JP2013077711A (ja) 2011-09-30 2011-09-30 半導体装置および半導体装置の製造方法
CN201210355337.5A CN103035660B (zh) 2011-09-30 2012-09-21 半导体器件和半导体器件制造方法

Related Parent Applications (1)

Application Number Title Priority Date Filing Date
CN201210355337.5A Division CN103035660B (zh) 2011-09-30 2012-09-21 半导体器件和半导体器件制造方法

Publications (2)

Publication Number Publication Date
CN108110023A CN108110023A (zh) 2018-06-01
CN108110023B true CN108110023B (zh) 2019-08-09

Family

ID=47040538

Family Applications (2)

Application Number Title Priority Date Filing Date
CN201810048763.1A Active CN108110023B (zh) 2011-09-30 2012-09-21 半导体器件和电子器件
CN201210355337.5A Active CN103035660B (zh) 2011-09-30 2012-09-21 半导体器件和半导体器件制造方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
CN201210355337.5A Active CN103035660B (zh) 2011-09-30 2012-09-21 半导体器件和半导体器件制造方法

Country Status (4)

Country Link
US (4) US9287311B2 (https=)
EP (1) EP2575174A3 (https=)
JP (1) JP2013077711A (https=)
CN (2) CN108110023B (https=)

Families Citing this family (26)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US8736069B2 (en) * 2012-08-23 2014-05-27 Macronix International Co., Ltd. Multi-level vertical plug formation with stop layers of increasing thicknesses
JP6041607B2 (ja) 2012-09-28 2016-12-14 キヤノン株式会社 半導体装置の製造方法
JP6128787B2 (ja) * 2012-09-28 2017-05-17 キヤノン株式会社 半導体装置
US8987914B2 (en) 2013-02-07 2015-03-24 Macronix International Co., Ltd. Conductor structure and method
US20140252561A1 (en) * 2013-03-08 2014-09-11 Qualcomm Incorporated Via-enabled package-on-package
US8993429B2 (en) 2013-03-12 2015-03-31 Macronix International Co., Ltd. Interlayer conductor structure and method
US9214351B2 (en) 2013-03-12 2015-12-15 Macronix International Co., Ltd. Memory architecture of thin film 3D array
US9117526B2 (en) 2013-07-08 2015-08-25 Macronix International Co., Ltd. Substrate connection of three dimensional NAND for improving erase performance
US9070447B2 (en) 2013-09-26 2015-06-30 Macronix International Co., Ltd. Contact structure and forming method
US8970040B1 (en) 2013-09-26 2015-03-03 Macronix International Co., Ltd. Contact structure and forming method
US9343322B2 (en) 2014-01-17 2016-05-17 Macronix International Co., Ltd. Three dimensional stacking memory film structure
US9405089B2 (en) * 2014-05-22 2016-08-02 Texas Instruments Incorporated High-temperature isotropic plasma etching process to prevent electrical shorts
US9721964B2 (en) 2014-06-05 2017-08-01 Macronix International Co., Ltd. Low dielectric constant insulating material in 3D memory
US9356040B2 (en) 2014-06-27 2016-05-31 Macronix International Co., Ltd. Junction formation for vertical gate 3D NAND memory
CN104332464B (zh) * 2014-08-28 2017-06-06 武汉新芯集成电路制造有限公司 一种功率器件与控制器件的集成工艺
JP6404787B2 (ja) * 2014-09-26 2018-10-17 信越化学工業株式会社 ウエハ加工体、ウエハ加工用仮接着材、及び薄型ウエハの製造方法
US9379129B1 (en) 2015-04-13 2016-06-28 Macronix International Co., Ltd. Assist gate structures for three-dimensional (3D) vertical gate array memory structure
US9478259B1 (en) 2015-05-05 2016-10-25 Macronix International Co., Ltd. 3D voltage switching transistors for 3D vertical gate memory array
KR102290020B1 (ko) * 2015-06-05 2021-08-19 삼성전자주식회사 스택드 칩 구조에서 소프트 데이터 페일 분석 및 구제 기능을 제공하는 반도체 메모리 장치
US9425209B1 (en) 2015-09-04 2016-08-23 Macronix International Co., Ltd. Multilayer 3-D structure with mirror image landing regions
CN106505030B (zh) * 2015-09-06 2019-07-26 中芯国际集成电路制造(上海)有限公司 硅通孔结构的制备方法
WO2017126319A1 (ja) * 2016-01-18 2017-07-27 ソニー株式会社 固体撮像素子及び電子機器
JP6568994B2 (ja) * 2016-02-29 2019-08-28 パナソニック・タワージャズセミコンダクター株式会社 半導体装置及びその製造方法
US10296698B2 (en) * 2016-12-14 2019-05-21 Globalfoundries Inc. Forming multi-sized through-silicon-via (TSV) structures
JP2021535613A (ja) 2018-09-04 2021-12-16 中芯集成電路（寧波）有限公司 ウェハレベルパッケージ方法及びパッケージ構造
US11488840B2 (en) * 2021-01-11 2022-11-01 Nanya Technology Corporation Wafer-to-wafer interconnection structure and method of manufacturing the same

Family Cites Families (27)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2947818B2 (ja) * 1988-07-27 1999-09-13 株式会社日立製作所 微細孔への金属穴埋め方法
US5262354A (en) 1992-02-26 1993-11-16 International Business Machines Corporation Refractory metal capped low resistivity metal conductor lines and vias
JPH06244186A (ja) * 1993-02-16 1994-09-02 Kawasaki Steel Corp 多層配線構造の半導体装置及びその製造方法
US6285082B1 (en) 1995-01-03 2001-09-04 International Business Machines Corporation Soft metal conductor
US6565729B2 (en) * 1998-03-20 2003-05-20 Semitool, Inc. Method for electrochemically depositing metal on a semiconductor workpiece
JP4083921B2 (ja) * 1998-05-29 2008-04-30 株式会社東芝 半導体装置の製造方法
JP2000021892A (ja) * 1998-06-26 2000-01-21 Nec Corp 半導体装置の製造方法
JP2000353703A (ja) * 1999-06-11 2000-12-19 Sony Corp 半導体装置の製造方法
JP3329380B2 (ja) * 1999-09-21 2002-09-30 日本電気株式会社 半導体装置およびその製造方法
US6727593B2 (en) * 2001-03-01 2004-04-27 Kabushiki Kaisha Toshiba Semiconductor device with improved bonding
JP4123415B2 (ja) * 2002-05-20 2008-07-23 ソニー株式会社 固体撮像装置
JP2004273523A (ja) * 2003-03-05 2004-09-30 Renesas Technology Corp 配線接続構造
US20060246699A1 (en) * 2005-03-18 2006-11-02 Weidman Timothy W Process for electroless copper deposition on a ruthenium seed
US20060244138A1 (en) * 2005-04-27 2006-11-02 International Business Machines Corporation Techniques for improving bond pad performance
JP4280277B2 (ja) * 2006-09-28 2009-06-17 株式会社神戸製鋼所 表示デバイスの製法
FR2910707B1 (fr) * 2006-12-20 2009-06-12 E2V Semiconductors Soc Par Act Capteur d'image a haute densite d'integration
US7791198B2 (en) * 2007-02-20 2010-09-07 Nec Electronics Corporation Semiconductor device including a coupling region which includes layers of aluminum and copper alloys
JP4600576B2 (ja) * 2008-05-08 2010-12-15 株式会社デンソー 半導体装置およびその製造方法
JP2009295676A (ja) * 2008-06-03 2009-12-17 Oki Semiconductor Co Ltd 半導体装置及びその製造方法
JP2010080897A (ja) * 2008-09-29 2010-04-08 Panasonic Corp 半導体装置及びその製造方法
JP5985136B2 (ja) 2009-03-19 2016-09-06 ソニー株式会社 半導体装置とその製造方法、及び電子機器
JP5493165B2 (ja) * 2009-09-29 2014-05-14 富士通セミコンダクター株式会社 半導体装置の製造方法
JP5442394B2 (ja) * 2009-10-29 2014-03-12 ソニー株式会社 固体撮像装置とその製造方法、及び電子機器
JP5489705B2 (ja) * 2009-12-26 2014-05-14 キヤノン株式会社 固体撮像装置および撮像システム
JP5853351B2 (ja) 2010-03-25 2016-02-09 ソニー株式会社 半導体装置、半導体装置の製造方法、及び電子機器
US20120001336A1 (en) * 2010-07-02 2012-01-05 Texas Instruments Incorporated Corrosion-resistant copper-to-aluminum bonds
JP5640630B2 (ja) 2010-10-12 2014-12-17 ソニー株式会社 固体撮像装置、固体撮像装置の製造方法、及び電子機器

Also Published As

Publication number Publication date
EP2575174A3 (en) 2013-08-21
US20180130842A1 (en) 2018-05-10
CN103035660B (zh) 2018-04-17
US10586823B2 (en) 2020-03-10
US20160181303A1 (en) 2016-06-23
CN108110023A (zh) 2018-06-01
US11139331B2 (en) 2021-10-05
CN103035660A (zh) 2013-04-10
EP2575174A2 (en) 2013-04-03
JP2013077711A (ja) 2013-04-25
US9287311B2 (en) 2016-03-15
US20130082341A1 (en) 2013-04-04
US9865639B2 (en) 2018-01-09
US20200161362A1 (en) 2020-05-21

Similar Documents

Publication Publication Date Title
CN108110023B (zh) 半导体器件和电子器件
JP6031765B2 (ja) 半導体装置、電子機器、及び、半導体装置の製造方法
KR101770077B1 (ko) 반도체 장치와 그 제조 방법, 및 전자 기기
CN101877356B (zh) 半导体装置及其制造方法
US11557573B2 (en) Semiconductor device, manufacturing method for semiconductor device, and electronic device
JP3540302B2 (ja) 半導体装置およびその製造方法
JP6041607B2 (ja) 半導体装置の製造方法
TWI798198B (zh) 半導體裝置及半導體裝置之製造方法
CN100593241C (zh) 固体摄像装置及其制造方法
JP2011009645A (ja) 半導体装置及びその製造方法
JP2011258687A (ja) 半導体装置およびその製造方法
JP2012204501A (ja) 半導体装置、電子デバイス、及び、半導体装置の製造方法
TW200830438A (en) Bonding pad structure for optoelectronic device and fabrication method thereof
JP2020145284A (ja) 半導体装置および機器
JP7297516B2 (ja) 半導体装置および機器
TW200539244A (en) Semiconductor device, the use thereof, and method of manufacturing the same
US8105917B2 (en) Connection pad structure for an image sensor on a thinned substrate
JP6385515B2 (ja) 半導体装置およびその製造方法
KR20100073786A (ko) 이미지센서 및 그 제조방법
JP2020053701A (ja) 半導体デバイスの製造方法

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant