CN108091621A - 内嵌开关芯片的器件模组及其制作方法 - Google Patents

内嵌开关芯片的器件模组及其制作方法 Download PDF

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Publication number
CN108091621A
CN108091621A CN201711391103.5A CN201711391103A CN108091621A CN 108091621 A CN108091621 A CN 108091621A CN 201711391103 A CN201711391103 A CN 201711391103A CN 108091621 A CN108091621 A CN 108091621A
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China
Prior art keywords
pad
switch chip
double
sided pcb
device module
Prior art date
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Pending
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CN201711391103.5A
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English (en)
Inventor
林伟健
梁可为
陈爱兵
高卫东
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LEJIAN TECHNOLOGY (ZHUHAI) Co Ltd
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LEJIAN TECHNOLOGY (ZHUHAI) Co Ltd
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Application filed by LEJIAN TECHNOLOGY (ZHUHAI) Co Ltd filed Critical LEJIAN TECHNOLOGY (ZHUHAI) Co Ltd
Priority to CN201711391103.5A priority Critical patent/CN108091621A/zh
Priority to US15/955,722 priority patent/US20190198423A1/en
Publication of CN108091621A publication Critical patent/CN108091621A/zh
Priority to CN201810929626.9A priority patent/CN109103159A/zh
Pending legal-status Critical Current

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    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Abstract

本发明提供一种内嵌开关芯片的器件模组及其制作方法，该器件模组包括：双面电路板，其第一表面上设置有第一焊盘，相对于第一表面的第二表面上设置有第二焊盘；散热基板，内嵌有电绝缘散热体且设置在双面电路板的第一表面侧；开关芯片，内嵌于散热基板，开关芯片的引脚焊接在第一焊盘上，开关芯片相对于引脚侧的另一侧与电绝缘散热体热连接；储能器件，其引脚焊接在第二焊盘上。本发明具有优异的散热性能，且能减小开关芯片与储能器件之间的线路长度，从而可有效减小储能器件引起的电磁干扰及寄生元素(电阻、电容)的影响。

Description

内嵌开关芯片的器件模组及其制作方法
技术领域
本发明涉及半导体器件领域，具体地说，是涉及一种内嵌开关芯片的器件模组以及这种器件模组的制作方法。
背景技术
随着电子产品向轻型化、小型化方向发展，越来越多的电子产品会将大量的器件集成在一块电路板上。例如，变频器或者电源电路上通常设置有开关芯片，如IGBT(绝缘栅双极型晶体管)或者场效应管(MOS管)、晶闸管、GTO(门极可关断晶闸管)、GTR(电力晶体管)、BJT(双极结型晶体管)或UJT(单结晶体管)等，并且IGBT等开关芯片往往承受较大的电流。
此外，现有的电路板上通常设置有诸如电容或者电感等储能器件，用于将外部的电能储存并且进行滤波等。通常，电容或者电感等储能器件需要向IGBT或者MOS管等开关芯片加载电压。
如图1所示，由于电路板上器件数量往往不多，因此通常只会在电路板的同一个表面上集成所有的器件，例如，在电路板10的上表面设置有MOS管11以及电容17。通常，通常，MOS管11设置有多个引脚12，在电路板10上设置有多个焊盘13，MOS管11的每一个引脚12通过焊料14焊接在焊盘13上。此外，每一个焊盘13均与电路板10上的线路连接。
相同的，电容17也设置有两个引脚18，电路板10上设置有与两个引脚18相对应的焊盘16，每一个引脚18通过焊料19焊接在焊盘16上。此外，焊盘16也与电路板10上的线路连接。这样，MOS管11与电容17实际上是通过电路板10上的线路电连接的。
然而，由于MOS管11与电容17设置在电路板10的同一个表面上，电容17只能设置在MOS管11的一侧，而MOS管11与电容17的体积均较大，导致连接MOS管11与电容17之间的线路往往较长。随着电容17与MOS管11之间的线路长度增加，电能传输过程中在线路上的损耗也较大，为了确保加载到MOS管11上的电压足够大，通常需要将电容17的储能能力提高，如使用储能较多的大电容。
但是，MOS管11是一个开关芯片，在该电路工作时，MOS管11一直处于高频的开关状态，即反复的通断，高频的开关切换将导致电容或者电感等器件产生高频的震荡信号，如高频谐波信号，这些高频谐波信号将对周边的器件造成电磁干扰，如对控制器产生干扰，影响控制器的工作。
为此，设计人员通常在电路设计的时候，在电路板上设置大量的抗电磁干扰的电路，如设置屏蔽层保护容易受电磁干扰影响的器件，或者设置用于将高频谐波导走的电路，但是这样的设计都大大增加电路板上器件的数量，并且会增加电路板的面积，不能满足人们对电子产品小型化、轻型化的要求。另一方面，这样的设计还会导致电子产品的生产成本的增加。
发明内容
本发明的第一目的是提供一种能够有效减小高频谐波信号的内嵌开关芯片的器件模组。
本发明的第二目的是提供一种减小电磁干扰的内嵌开关芯片的器件模组的制作方法。
为了实现上述的第一目的，本发明提供的内嵌开关芯片的器件模组包括：
双面电路板，其第一表面上设置有第一焊盘，相对于第一表面的第二表面上设置有第二焊盘，第一焊盘与第二焊盘之间通过导电过孔电连接；
散热基板，设置述双面电路板的第一表面侧；其中，散热基板包括有机绝缘基材、内嵌于有机绝缘基材的电绝缘散热体、以及形成在散热基板外侧表面并与电绝缘散热体热连接的金属层；
开关芯片，内嵌于有机绝缘基材；开关芯片的引脚焊接在第一焊盘上，开关芯片相对于引脚侧的另一侧与电绝缘散热体热连接；
储能器件，其引脚焊接在第二焊盘上。
根据本发明的一种优选方案，在双面电路板的厚度方向上，第二焊盘与第一焊盘至少一部分重叠，以缩短二者之间的导电线路距离。
更优选地，导电通孔的轴线垂直于第一焊盘的表面。将导电过孔的轴线垂直于第一焊盘的表面，使得导电过孔的长度最短，填充在导电过孔内的导电材料的长度也最短，有利于将开关芯片与储能器件之间的距离设计成最短的距离。
根据本发明的另一优选方案，电绝缘散热体包括陶瓷芯核以及在双面电路板的厚度方向上位于陶瓷芯核两侧的散热金属层。更优选地，陶瓷芯核为氮化硅陶瓷或者氧化铝陶瓷或者氮化铝陶瓷；其中，特别优选的是氮化硅陶瓷，其具有即使在较大的温差条件下进行快速地冷热循环也不容易开裂的优点，热稳定性极佳。
本发明中，开关芯片可以是任意分立形式的开关器件，例如为IGBT芯片或者MOS管芯片IGBT(绝缘栅双极型晶体管)、MOSFET(金属-氧化物半导体场效应晶体管)、晶闸管、GTO(门极可关断晶闸管)、GTR(电力晶体管)、BJT(双极结型晶体管)或UJT(单结晶体管)等。
作为本发明的另一具体实施方式，储能器件为电容或者电感。
本发明中，双面电路板的厚度优选低于1毫米，更优选低于0.8毫米，更优选低于0.6毫米，进一步优选低于0.5毫米。双面电路板的厚度越薄，开关芯片与储能器件之间导电线路的长度也就越短，从而能够更有效地降低储能器件引起的电磁干扰。
为实现上述的第二目的，本发明提供的器件模组的制作方法包括：
提供双面电路板，该双面电路板的第一表面上设置有第一焊盘，相对于第一表面的第二表面上设置有第二焊盘，第一焊盘与第二焊盘之间通过导电过孔电连接；
将开关芯片的引脚焊接在第一焊盘上，并在开关芯片相对于引脚侧的另一侧上焊接电绝缘散热体；其中，电绝缘散热体包括陶瓷芯核以及在双面电路板的厚度方向上位于陶瓷芯核两侧的散热金属层；
在双面电路板上依次层叠具有贯穿窗口的有机绝缘基材和设置在有机绝缘基材上的基材金属层，有机绝缘基材包括交替设置的半固化片和有机绝缘介质层；其中，开关芯片和电绝缘散热体内嵌于贯穿窗口中；
对层叠有机绝缘基材之后的器件模组进行热压；
依次采用化学镀和电镀工艺在器件模组远离双面电路板的表面形成覆铜层；
将储能器件的引脚焊接在第二焊盘上。
上述方法中，在双面电路板的厚度方向上，第二焊盘优选地与第一焊盘至少一部分重叠。
上述方法中，陶瓷芯核优选为氮化硅陶瓷、氧化铝陶瓷或氮化铝陶瓷。
由于本发明所提供内嵌开关芯片的模组中，将开关芯片以及电容等储能器件设置在双面电路板的两个相对的表面上，开关芯片与储能器件是通过贯穿双面电路板的导电过孔电连接的，因此，开关芯片与储能器件之间的连接线路长度非常短，连接线路的长度可以理解是第一焊盘与第二焊盘之间的距离。
由于第一焊盘与第二焊盘之间的距离就是双面电路板的厚度，通常双面电路板的厚度小于一毫米，这样，从储能器件到开关芯片之间的线路非常短，消耗在线路上的电能也非常少，可以使用电储电能力较小的储能器件也可以满足电路的工作需求，因此本发明可以使用小电容或者小电感来实现储能。对于储电能力较小的器件来说，即使开关芯片高频地工作，储能器件所产生的高次谐波信号也非常微弱，对周边器件产生的电磁干扰及寄生元素(电阻、电容)的影响也非常微弱，基本上不会影响周边的器件正常工作。
进一步地，采用小电容或者小电感，可以减小储能器件的体积，也减小了电路板所需要的面积，进而减小电子产品的体积。同时，由于双面电路板上不需要设置大量的屏蔽层或者用于将高次谐波导走的电路，因此可以降低器件模组的生产成本。
另外，开关芯片和电绝缘散热体同时内置于散热基板中，电绝缘散热体在散热基板的厚度方向上形成高导热通道，将开关芯片产生的热量及时导走，避免开关芯片工作时产生的热量积聚而影响开关芯片的工作。
附图说明
图1是一种现有具有开关器件的模组的结构示意图。
图2是本发明内嵌开关芯片的器件模组实施例所应用电路的电原理图；
图3是本发明内嵌开关芯片的器件模组实施例的结构示意图；
图4是本发明内嵌开关芯片的器件模组制作方法实施例第一阶段的结构图示意图；
图5是本发明内嵌开关芯片的器件模组制作方法实施例第二阶段的结构图示意图；
图6是本发明内嵌开关芯片的器件模组制作方法实施例第三阶段的结构图示意图。
以下结合附图及实施例对本发明作进一步说明。
具体实施方式
内嵌开关芯片的器件模组实施例：
本实施例内嵌开关芯片的器件模组可以应用在电源电路上，参见图2，应用本实施例的器件模组的电路是一个电源电路，如具有整流电路的电源电路。本实施例中，电源电路包括接收外部交流电源的端子25、26，并将外部交流电源转换成直流电源输出。因此，整流电路中设置有两个开关芯片Q1与Q2，本实施例中，开关芯片可以是三极管、场效应管(MOS管)或者IGBT等具有开关性能的芯片。
为了控制开关芯片Q1与Q2的通断，电源电路设置了控制芯片22以及两个驱动芯片23、24，控制芯片22用于向驱动芯片23、24发出驱动信号，驱动芯片23用于控制开关芯片Q1的通断。例如，当驱动芯片23向开关芯片Q1输出高电平信号时，开关芯片Q1导通，当驱动芯片23向开关芯片Q1输出低电平信号时，开关芯片Q1截止。相同的，当驱动芯片24向开关芯片Q2输出高电平信号时，开关芯片Q2导通，当驱动芯片24向开关芯片Q2输出低电平信号时，开关芯片Q2截止。
此外，电源电路还设置有储能器件，如图2中的电容C1，电容C1的两端分别连接至开关芯片件Q1的漏极与开关芯片Q2的源极之间，因此，在电路板上，电容C1是直接到开关芯片Q1与Q2上的，这样为减小开关芯片Q1、Q2与电容C1之间的距离提供了电路设计上的便利。
外部输入的交流电经过开关芯片Q1、Q2组成的半桥整流电路整流后，形成直流电输出，并通过端子28向外部输出直流电。
下面结合图3介绍本实施例器件模组的结构。本实施例的器件模组包括一块双面电路板30，双面电路板30的厚度低于1毫米，例如0.4毫米。双面电路板30可以是例如聚酰亚胺电路板的柔性电路板，也可以是如FR4电路板的刚性电路板。在本发明的其他实施例中，双面电路板30的厚度可以大于1毫米，例如为2毫米。
在双面电路板30的上表面设置有开关芯片31，在双面电路板30的下表面设置有电容50。从图3可见，开关芯片31以及电容50分别设置在双面电路板30的两个相对表面上。需要说明的是，本发明所指的方向“上”、“下”是以图3所示的方向说明，但不应理解为对本发明的限定。
在双面电路板30的上表面设置有多个焊盘33，开关芯片31在靠近双面电路板30的一侧设置有多个引脚32，每一个引脚32通过焊接材料34焊接在焊盘33上。通常，焊盘33由铜箔蚀刻形成的，焊接材料34可以是银浆、铜浆、锡膏等导电材料。优选的，焊盘33的面积稍大于引脚32的面积，以便于引脚32能够完全与焊盘33接触。在双面电路板30的下表面也设置有多个焊盘51，电容50的引脚焊接到焊盘51上。
为了实现开关芯片31与电容50之间的电连接，本实施例中，在双面电路板30上设置多个导电过孔55，并且每一个导电过孔55贯穿双面电路板30的上下表面，从图3可见，导电过孔55的上端连接至焊盘33，导电过孔55的下端连接至焊盘51。导电过孔55的内壁具有电镀铜层，从而实现焊盘33与焊盘51之间的电连接。可见，本实施例中，开关芯片31的引脚32与电容50的引脚之间通过焊盘33、导电过孔55和焊盘51电连接。
具体地，制作双面电路板30时，可以先在双面电路板30上钻孔，如使用激光钻孔以形成一个通孔，然后在该通孔的内壁上电镀上一层导电材料，如铜等金属材料，最后在镀上导电材料后的通孔内填充如绝缘树脂的绝缘材料，从而形成导电过孔55。
电容50输出的电能需要经过焊盘51、导电过孔55和焊盘33传导至开关芯片31，由于焊盘51与焊盘33的面积、厚度往往难以改变，因此，为了实现开关芯片31与电容50之间的线路更短，本实施例中通过设定最短的导电过孔55长度来减小开关芯片31与电容55之间的线路长度，从而减小电容55输出的电能在线路上的消耗。
为了将开关芯片31与电容50之间的线路设置成最短的距离，一方面将开关芯片31与电容50设置得足够的近，从图3可见，开关芯片31与电容50位于双面电路板30上下两侧并且设置在相对的位置上，即在双面电路板30的厚度方向上，开关芯片31与电容50至少部分重叠。
并且，对于使用相同导电过孔55连接的焊盘33与焊盘51来说，在焊盘33的投影方向上，焊盘51的投影图案与焊盘31的图案也是至少一部分重叠。优选的，如果焊盘33与焊盘51的面积相同，则焊盘33与焊盘51的投影图案完全重叠，如果其中一个焊盘的面积大于另一个焊盘的面积，则面积较小的焊盘的投影图案完全位于面积较大的焊盘的投影图案内。
由于开关芯片31的焊盘与电容50的焊盘在双面电路板30的两个表面上是正对的设置，因此，可以将导电过孔55做成最短的长度。从图3可见，导电过孔55的轴线是垂直于焊盘33的上表面，由于焊盘33与焊盘51相互平行，因此，导电过孔55实际上是垂直于焊盘33与焊盘51的。
当然，如图3所示，开关芯片31下方的焊盘33与电容50上方的焊盘51之间设置可以设置多个导电过孔55，这样，即使某一个导电过孔55内的导电材料出现异常，也不会影响其他导电过孔55内的导电材料的导电。并且，多个导电过孔55之间是相互平行的，也就是每一个导电过孔55的轴线均垂直于焊盘33的表面。
当然，在实际应用过程中，焊盘33与焊盘51并不一定是完全正对的，优选地只需要在焊盘33的投影上，焊盘33的投影图案与焊盘51的投影图案至少有一部分是重叠的即可。并且，导电过孔55的轴线并不一定需要与焊盘33的表面垂直，也可以设置成倾斜的，如导电过孔55的轴线与焊盘33的表面之间形成80°的角度，这样也能够实现本发明的目的。
由于开关芯片31高频地执行通断的操作，因此开关芯片31工作时将产生大量的热量，为了避免开关芯片31产生的热量影响开关芯片31的工作，需要将开关芯片31的热量及时导走。本实施例中，将开关芯片31内嵌在一散热基板内。具体地，散热基板包括有机绝缘基材60、内嵌于有机绝缘基材60的电绝缘散热体40、以及形成在散热基板外侧表面并与电绝缘散热体40热连接的金属层(覆铜层)48，有机绝缘基材60包括多层半固化片63以及例如FR4或BT的有机绝缘介质层62，半固化片63和有机绝缘介质层62交替设置。
电绝缘散热体40包括一个陶瓷芯核41以及位于陶瓷芯核41两侧的散热金属层42、43。其中，靠近开关芯片31的一层散热金属层43与开关芯片31相对于引脚32侧的另一侧焊接连接。这样，开关芯片31产生的热量能够快速传导至电绝缘散热体40中，并进一步传导至金属层(覆铜层)48中而快速散发。优选的，陶瓷芯核41为氮化硅、氧化铝或者氮化铝等陶瓷。最优选的，陶瓷芯核41选用氮化硅，由于氮化硅具有在冷热循环情形下不容易开裂的优点，因此在IGBT或者MOS管等开关器件31工作时产生大量的热量的情况下，氮化硅也不会容易发生开裂的情况。覆铜层48可以与外部的散热体接触，例如焊接到铝制的外部散热器上，快速地将开关芯片31的热量散发。
内嵌开关芯片的器件模组的制作方法实施例：
下面结合图4至图6介绍器件模组的制作方法。首先，制作一块双面电路板，如图4所示，双面电路板30可以使用玻璃纤维环氧树脂双面覆铜板、聚酰亚胺双面覆铜板或者聚酯薄膜双面覆铜性板来制作。具体地，在双面覆铜板上钻孔，如使用激光钻孔的方式形成多个贯穿该双面覆铜板的通孔，然后在通孔内设置导电材料以形成导电过孔。设置导电材料可以是将导电材料填充至通孔内，或者在通孔上镀上一层导电金属，再填充绝缘材料。
在双面电路板30的两个相对表面上分别形成线路图案以及焊盘，例如在第一表面上形成多个第一焊盘33，在第二表面上形成多个焊盘51。当然，用于焊接开关芯片31的第一焊盘33最佳地设置在用于焊接电容50的焊盘51的正上方，第一焊盘33与第二焊盘51通过导电过孔55电连接。优选的，导电过孔55的轴线垂直于第一焊盘33的表面，从而使得导电过孔55的长度最短，只有双面电路板30的厚度大小，如只有一两毫米甚至小于一毫米。
优选的，设置第一焊盘33以及第二焊盘51时，应该将第一焊盘33与第二焊盘51正对设置，即在第一焊盘33的投影方向(即双面电路板30的厚度方向上)上，使第二焊盘51的投影图案与第一焊盘33至少一部分重叠，这样才能确保导电过孔55的长度最短。
接着，在第一焊盘33上焊接如IGBT或者MOS管的开关芯片31。如图5所示，在焊接开关芯片31的同时或者在开关芯片31的焊接完成之后，在开关芯片31的上方焊接电绝缘散热体40，也就是在开关芯片31远离双面电路板30的一侧焊接电绝缘散热体40。本实施例中，电绝缘散热体40包括陶瓷芯核41以及在双面电路板30的厚度方向上位于陶瓷芯核41两侧的散热金属层42、43，优选的，陶瓷芯核41为氮化硅、氧化铝或者氮化铝等陶瓷。最优选的，陶瓷芯核41选用氮化硅。
如图6所示，在双面电路板30上层叠具有贯穿窗口的有机绝缘基材60和设置在有机绝缘基材60上的基材金属层61，有机绝缘基材60包括依次交替设置的半固化片63和有机绝缘介质层62；开关芯片31和电绝缘散热体40内嵌于有机绝缘基材60的贯穿窗口中。其中，最外侧的有机绝缘介质层62和基材金属层61以覆铜板的形式提供。
然后，对层叠有机绝缘基材60之后的功率模组进行热压；热压过程中，半固化片63流动而填充贯穿窗口内的间隙，固化并连接双面电路板30和散热基板。其中，根据热压过程控制可能包括对热压过程中流动至散热金属层42和基材金属层61表面的树脂进行去除(例如机械研磨)的步骤。
接着，再次参见图3，在散热基板远离双面电路板30的外侧表面形成覆铜层48。覆铜层48包括通过化学镀工艺形成的底铜层和通过电镀工艺形成的电镀加厚铜层。
最后，在第二焊盘51上焊接电容50。
由于本发明将开关芯片与电容分别设置在双面电路板的两个相对的表面上，并且两个表面上的焊盘通过导电过孔连接，因此开关芯片与电容之间的线路非常短，只有导电过孔的长度。如果双面电路板的厚度很小，则开关芯片与电容之间的线路往往只有一两个毫米，甚至小于一毫米，这样，可以使用储电能力很小的电容即可以满足使用的需求。正是采用储电能力很小的电容，因此可以有效的减小有电容产生的高次谐波，进而可以减小电磁干扰的现象。
另外，还需要说明的是，设置在双面电路板下方的储能器件不一定是电容，还可以是电感，这并不影响本发明的实施。另外，本发明的器件模组并不限于应用在电源电路上，只要使用开关芯片以及储能器件的模组，都可以采用本发明的方案。
虽然以上通过优选实施例描绘了本发明，但应当理解的是，本领域普通技术人员在不脱离本发明的发明范围内，凡依照本发明所作的同等改进，如陶瓷散热体具体材料的改变、通孔横截面形状的改变等变化，应为本发明的保护范围所涵盖。

Claims (10)

1.内嵌开关芯片的器件模组，包括：
双面电路板，其第一表面上设置有第一焊盘，相对于所述第一表面的第二表面上设置有第二焊盘，所述第一焊盘与所述第二焊盘之间通过导电过孔电连接；
散热基板，设置在所述双面电路板的第一表面侧；其中，所述散热基板包括有机绝缘基材、内嵌于所述有机绝缘基材的电绝缘散热体、以及形成在所述散热基板外侧表面并与所述电绝缘散热体热连接的金属层；
开关芯片，内嵌于所述有机绝缘基材；所述开关芯片的引脚焊接在所述第一焊盘上，所述开关芯片相对于所述引脚侧的另一侧与所述电绝缘散热体热连接；
储能器件，其引脚焊接在所述第二焊盘上。
2.根据权利要求1所述的器件模组，其中，在所述双面电路板的厚度方向上，所述第二焊盘与所述第一焊盘至少一部分重叠。
3.根据权利要求1所述的器件模组，其中，所述电绝缘散热体包括陶瓷芯核以及在所述双面电路板的厚度方向上位于所述陶瓷芯核两侧的散热金属层。
4.根据权利要求3所述的器件模组，其中，所述陶瓷芯核为氮化硅陶瓷、氧化铝陶瓷或氮化铝陶瓷。
5.根据权利要求1所述的器件模组，其中，所述开关芯片为IGBT、MOS管、晶闸管、GTO、GTR、BJT或UJT。
6.根据权利要求1所述的器件模组，其中，所述储能器件为电容或者电感。
7.如权利要求1所述的器件模组，其中，所述双面电路板的厚度低于1毫米。
8.内嵌开关芯片的器件模组的制作方法，包括：
提供双面电路板，所述双面电路板的第一表面上设置有第一焊盘，相对于所述第一表面的第二表面上设置有第二焊盘，所述第一焊盘与所述第二焊盘之间通过导电过孔电连接；
将开关芯片的引脚焊接在所述第一焊盘上，并在所述开关芯片相对于所述引脚侧的另一侧上焊接电绝缘散热体；其中，所述电绝缘散热体包括陶瓷芯核以及在所述双面电路板的厚度方向上位于所述陶瓷芯核两侧的散热金属层；
在所述双面电路板上依次层叠具有贯穿窗口的有机绝缘基材和设置在所述有机绝缘基材上的基材金属层，所述有机绝缘基材包括交替设置的半固化片和有机绝缘介质层；其中，所述开关芯片和所述电绝缘散热体内嵌于所述贯穿窗口中；
对层叠所述有机绝缘基材之后的器件模组进行热压；
依次采用化学镀和电镀工艺在所述器件模组远离所述双面电路板的表面形成覆铜层；
将储能器件的引脚焊接在所述第二焊盘上。
9.根据权利要求8所述的制作方法，其中，在所述双面电路板的厚度方向上，所述第二焊盘与所述第一焊盘至少一部分重叠。
10.根据权利要求8所述的制作方法，其中，所述陶瓷为氮化硅陶瓷、氧化铝陶瓷或氮化铝陶瓷。
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Application publication date: 20180529