CN107958866A - 蒸发镀膜工艺中的圆片固定装置 - Google Patents

蒸发镀膜工艺中的圆片固定装置 Download PDF

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CN107958866A
CN107958866A CN201810004547.7A CN201810004547A CN107958866A CN 107958866 A CN107958866 A CN 107958866A CN 201810004547 A CN201810004547 A CN 201810004547A CN 107958866 A CN107958866 A CN 107958866A
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CN107958866B (zh
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伍志军
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SUZHOU SAISEN ELECTRONIC TECHNOLOGY Co Ltd
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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/50—Substrate holders
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6838—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping with gripping and holding devices using a vacuum; Bernoulli devices
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/24—Vacuum evaporation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68792—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the construction of the shaft

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  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
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  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
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  • Physical Vapour Deposition (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)

Abstract

本发明公开了一种蒸发镀膜工艺中的圆片固定装置，其包括有工作腔室，工作腔室上端部设置有固定台；所述固定台的轴线位置设置有吸附管道，其连通至设置在工作腔室外部的真空吸附泵；所述吸附管道包括有第一管道与第二管道，第一管道与真空吸附泵进行连接，第二管道与固定台进行连接，第二管道延伸至第一管道内部，第一管道与第二管道的连接位置设置有密封圈；所述第二管道之上设置有从动齿轮，工作腔室的上端部设置有与从动齿轮相啮合的主动齿轮，主动齿轮由电机进行驱动；采用上述技术方案，其可使得圆片在实现其旋转加工的同时，避免常规固定方式对其表面进行损坏。

Description

蒸发镀膜工艺中的圆片固定装置
技术领域
本发明涉及一种半导体加工设备，尤其是一种蒸发镀膜工艺中的圆片固定装置。
背景技术
蒸发镀膜是将熔点较低的金属进行加热，使得金属蒸发并附着于待加工的圆片之上以形成镀膜的工艺。现有的蒸发镀膜工艺中，圆片往往采用夹持固定方式，然而，由于圆片多用于半导体生产，其厚度较薄，在长时间的夹持状态下圆片极易发生损坏。
发明内容
本发明要解决的技术问题是提供一种蒸发镀膜工艺中的圆片固定装置，其可避免圆片在固定与工作过程中受到损伤。
为解决上述技术问题，本发明涉及一种蒸发镀膜工艺中的圆片固定装置，其包括有工作腔室，工作腔室的下端面设置有用于放置金属物料的放置台，放置台内部设置有电热源，工作腔室上端部设置有用于固定圆片的固定台，固定台由设置在工作腔室外部的电机进行驱动；所述固定台的轴线位置设置有吸附管道，其连通至设置在工作腔室外部的真空吸附泵；所述吸附管道包括有第一管道与第二管道，第一管道与真空吸附泵进行连接，第二管道与固定台进行连接，第二管道延伸至第一管道内部，第一管道与第二管道的连接位置设置有密封圈；所述第二管道之上设置有从动齿轮，工作腔室的上端部设置有与从动齿轮相啮合的主动齿轮，主动齿轮由电机进行驱动。
作为本发明的一种改进，所述吸附管道中，第二管道于固定台一侧的端部直径至少为固定台的直径的1/3。采用上述设计，其可确保第二管道对于圆片产生足够的吸附力。
作为本发明的一种改进，所述吸附管道中，第二管道于固定台一侧的端部设置有多个沿固定台径向进行延伸的辅助吸附管道，多个辅助吸附管道关于第二管道的轴线成旋转对称，每一个辅助吸附管道均经由固定台的端面与圆片相接触。
采用上述设计，其可通过多个辅助吸附管道对圆片的各个位置进行吸附，从而避免圆片轴心局部受力过大进而导致其损坏。
采用上述技术方案，其可通过真空吸附泵产生的吸附作用对圆片进行固定，并通过主动齿轮与从动齿轮间的啮合，以实现第二管道连通固定台进行旋转，从而使得圆片在实现其旋转加工的同时，避免常规固定方式对其表面进行损坏。
附图说明
图1为本发明示意图；
附图标记列表：
1工作腔室 2放置台 3固定台
4电机 5吸附管道 51第一管道
52第二管道 53密封圈 6真空吸附泵
7从动齿轮 8主动齿轮 9辅助吸附管道
具体实施方式
下面结合具体实施方式，进一步阐明本发明，应理解下述具体实施方式仅用于说明本发明而不用于限制本发明的范围。
实施例1
如图1所示的一种蒸发镀膜工艺中的圆片固定装置，其包括有工作腔室1，工作腔室1的下端面设置有用于放置金属物料的放置台2，放置台2内部设置有电热源，工作腔室1上端部设置有用于固定圆片的固定台3，固定台3由设置在工作腔室1外部的电机4进行驱动；所述固定台3的轴线位置设置有吸附管道5，其连通至设置在工作腔室1外部的真空吸附泵6；所述吸附管道5包括有第一管道51与第二管道52，第一管道51与真空吸附泵6进行连接，第二管道52与固定台3进行连接，第二管道52延伸至第一管道51内部，第一管道1与第二管道52的连接位置设置有密封圈53；所述第二管道52之上设置有从动齿轮7，工作腔室1的上端部设置有与从动齿轮7相啮合的主动齿轮8，主动齿轮8由电机4进行驱动。
作为本发明的一种改进，所述吸附管道中，第二管道52于固定台3一侧的端部直径为固定台3的直径的1/3。采用上述设计，其可确保第二管道对于圆片产生足够的吸附力。
采用上述技术方案，其可通过真空吸附泵产生的吸附作用对圆片进行固定，并通过主动齿轮与从动齿轮间的啮合，以实现第二管道连通固定台进行旋转，从而使得圆片在实现其旋转加工的同时，避免常规固定方式对其表面进行损坏。
实施例2
作为本发明的一种改进，所述吸附管道5中，第二管道52于固定台3一侧的端部设置有四个沿固定台3径向进行延伸的辅助吸附管道9，多个辅助吸附管道9关于第二管道52的轴线成旋转对称，每一个辅助吸附管道9均经由固定台3的端面与圆片相接触。采用上述设计，其可通过多个辅助吸附管道对圆片的各个位置进行吸附，从而避免圆片轴心局部受力过大进而导致其损坏。
本实施例其余特征与优点均与实施例1相同。

Claims (10)

1.一种蒸发镀膜工艺中的圆片固定装置，其包括有工作腔室、放置台、电热源、固定台、电机、吸附管道、真空吸附泵、密封圈、从动齿轮、主动齿轮，所述吸附管道包括有第一管道与第二管道。
2.按照权利要求1所述的蒸发镀膜工艺中的圆片固定装置，其特征在于，所述放置台设置在所述工作腔室的下端面，所述放置台内部设置有所述电热源；所述固定台设置在所述工作腔室上端部，所述吸附管道设置在所述固定台的轴线位置；所述电机设置在所述工作腔室外部；所述真空吸附泵设置在所述工作腔室外部。
3.按照权利要求1所述的蒸发镀膜工艺中的圆片固定装置，其特征在于，所述从动齿轮设置在所述第二管道上，在所述工作腔室的上端部设置有与从动齿轮相啮合的主动齿轮，主动齿轮由所述电机进行驱动。
4.按照权利要求1所述的蒸发镀膜工艺中的圆片固定装置，其特征在于，所述吸附管道与所述真空吸附泵连通，其中所述第一管道与所述真空吸附泵进行连接，所述第二管道与所述固定台进行连接，所述第二管道延伸至所述第一管道内部，所述第一管道与所述第二管道的连接位置设置有所述密封圈。
5.按照权利要求1所述的蒸发镀膜工艺中的圆片固定装置，其特征在于，所述电机驱动所述固定台。
6.按照权利要求1所述的蒸发镀膜工艺中的圆片固定装置，其特征在于，所述固定台用于固定圆片。
7.按照权利要求1所述的蒸发镀膜工艺中的圆片固定装置，其特征在于，所述放置台用于放置金属物料。
8.按照权利要求1所述的蒸发镀膜工艺中的圆片固定装置，其特征在于，所述吸附管道中，所述第二管道于所述固定台一侧的端部直径至少为所述固定台的直径的1/3。
9.按照权利要求1所述的蒸发镀膜工艺中的圆片固定装置，其特征在于，所述吸附管道中，所述第二管道于所述固定台一侧的端部还设置辅助吸附管道。
10.按照权利要求9所述的蒸发镀膜工艺中的圆片固定装置，其特征在于，所述辅助吸附管道有多个，其沿所述固定台径向进行延伸，多个所述辅助吸附管道关于所述第二管道的轴线成旋转对称，每一个所述辅助吸附管道均经由所述固定台的端面与圆片相接触。
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CN109023258B (zh) * 2018-09-20 2023-06-30 扬州扬杰电子科技股份有限公司 一种蒸发台

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