CN107919432A - 发光二极管芯片的制造方法和发光二极管芯片 - Google Patents

发光二极管芯片的制造方法和发光二极管芯片 Download PDF

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Publication number
CN107919432A
CN107919432A CN201710938308.4A CN201710938308A CN107919432A CN 107919432 A CN107919432 A CN 107919432A CN 201710938308 A CN201710938308 A CN 201710938308A CN 107919432 A CN107919432 A CN 107919432A
Authority
CN
China
Prior art keywords
chip
light
emitting diode
backlight unit
transparent substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201710938308.4A
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English (en)
Chinese (zh)
Inventor
冈村卓
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Disco Corp
Original Assignee
Disco Corp
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Disco Corp filed Critical Disco Corp
Publication of CN107919432A publication Critical patent/CN107919432A/zh
Pending legal-status Critical Current

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/005—Processes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76—Making of isolation regions between components
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
    • H01L2933/0008—Processes
    • H01L2933/0033—Processes relating to semiconductor body packages
    • H01L2933/0058—Processes relating to semiconductor body packages relating to optical field-shaping elements

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Led Devices (AREA)
  • Dicing (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Laser Beam Processing (AREA)
CN201710938308.4A 2016-10-06 2017-09-30 发光二极管芯片的制造方法和发光二极管芯片 Pending CN107919432A (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016198428A JP2018060946A (ja) 2016-10-06 2016-10-06 発光ダイオードチップの製造方法及び発光ダイオードチップ
JP2016-198428 2016-10-06

Publications (1)

Publication Number Publication Date
CN107919432A true CN107919432A (zh) 2018-04-17

Family

ID=61894784

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201710938308.4A Pending CN107919432A (zh) 2016-10-06 2017-09-30 发光二极管芯片的制造方法和发光二极管芯片

Country Status (4)

Country Link
JP (1) JP2018060946A (ko)
KR (1) KR102204764B1 (ko)
CN (1) CN107919432A (ko)
TW (1) TW201816871A (ko)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP7321652B2 (ja) * 2019-12-27 2023-08-07 株式会社ディスコ ディスプレイパネルの製造方法
JP7321653B2 (ja) * 2019-12-27 2023-08-07 株式会社ディスコ ディスプレイパネルの製造方法

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050056831A1 (en) * 2003-09-17 2005-03-17 Toyoda Gosei Co., Ltd. Light-emitting device
CN102468415A (zh) * 2010-11-01 2012-05-23 三星Led株式会社 半导体发光器件
JP2014517544A (ja) * 2011-06-15 2014-07-17 センサー エレクトロニック テクノロジー インコーポレイテッド 大型の逆さ光取り出し構造付の装置
JP2014239123A (ja) * 2013-06-06 2014-12-18 株式会社ディスコ 加工方法

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20070000952A (ko) * 2005-06-27 2007-01-03 주식회사 엘지화학 열방출이 개선된 전면발광형 발광다이오드 소자의 제조방법
JP2007266356A (ja) * 2006-03-29 2007-10-11 Kyocera Corp 発光装置およびそれを用いた照明装置
WO2009017035A1 (ja) * 2007-07-27 2009-02-05 Asahi Glass Co., Ltd. 透光性基板、その製造方法、有機ｌｅｄ素子及びその製造方法
JP2011009305A (ja) * 2009-06-23 2011-01-13 Koito Mfg Co Ltd 発光モジュール
JP2012038889A (ja) * 2010-08-06 2012-02-23 Koito Mfg Co Ltd 蛍光部材および発光モジュール
KR20120107271A (ko) * 2011-03-21 2012-10-02 삼성전자주식회사 발광소자 패키지 및 그 제조 방법
JP5941306B2 (ja) * 2012-03-19 2016-06-29 スタンレー電気株式会社 発光装置およびその製造方法
JP2014175354A (ja) 2013-03-06 2014-09-22 Disco Abrasive Syst Ltd 発光ダイオード
KR101426433B1 (ko) * 2013-04-30 2014-08-06 주식회사 세미콘라이트 반도체 발광소자를 제조하는 방법
KR20150092213A (ko) * 2013-12-26 2015-08-12 신에쯔 세끼에이 가부시키가이샤 파장 변환용 석영 유리 부재 및 그 제조 방법
JP2015192100A (ja) * 2014-03-28 2015-11-02 豊田合成株式会社 発光素子および発光素子の製造方法
TW201614870A (en) * 2014-10-08 2016-04-16 Toshiba Kk Semiconductor light emitting device and method for manufacturing the same

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20050056831A1 (en) * 2003-09-17 2005-03-17 Toyoda Gosei Co., Ltd. Light-emitting device
CN102468415A (zh) * 2010-11-01 2012-05-23 三星Led株式会社 半导体发光器件
JP2014517544A (ja) * 2011-06-15 2014-07-17 センサー エレクトロニック テクノロジー インコーポレイテッド 大型の逆さ光取り出し構造付の装置
JP2014239123A (ja) * 2013-06-06 2014-12-18 株式会社ディスコ 加工方法

Also Published As

Publication number Publication date
KR102204764B1 (ko) 2021-01-18
JP2018060946A (ja) 2018-04-12
TW201816871A (zh) 2018-05-01
KR20180038379A (ko) 2018-04-16

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