CN107919371B - 光电转换装置和系统 - Google Patents

光电转换装置和系统 Download PDF

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Publication number
CN107919371B
CN107919371B CN201710912815.0A CN201710912815A CN107919371B CN 107919371 B CN107919371 B CN 107919371B CN 201710912815 A CN201710912815 A CN 201710912815A CN 107919371 B CN107919371 B CN 107919371B
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photoelectric conversion
refractive index
microlens array
conversion device
porosity
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Chinese (zh)
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CN107919371A (zh
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栗原政树
佐藤信彦
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Canon Inc
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Canon Inc
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/024—Manufacture or treatment of image sensors covered by group H10F39/12 of coatings or optical elements
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/011—Manufacture or treatment of image sensors covered by group H10F39/12
    • H10F39/026—Wafer-level processing
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/10—Integrated devices
    • H10F39/12—Image sensors
    • H10F39/18—Complementary metal-oxide-semiconductor [CMOS] image sensors; Photodiode array image sensors
    • H10F39/182—Colour image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/804—Containers or encapsulations
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/805—Coatings
    • H10F39/8053—Colour filters
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10F—INORGANIC SEMICONDUCTOR DEVICES SENSITIVE TO INFRARED RADIATION, LIGHT, ELECTROMAGNETIC RADIATION OF SHORTER WAVELENGTH OR CORPUSCULAR RADIATION
    • H10F39/00—Integrated devices, or assemblies of multiple devices, comprising at least one element covered by group H10F30/00, e.g. radiation detectors comprising photodiode arrays
    • H10F39/80—Constructional details of image sensors
    • H10F39/806—Optical elements or arrangements associated with the image sensors
    • H10F39/8063—Microlenses

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CN201710912815.0A 2016-10-05 2017-09-30 光电转换装置和系统 Active CN107919371B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2016197546A JP2018060921A (ja) 2016-10-05 2016-10-05 光電変換装置及びシステム
JP2016-197546 2016-10-05

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CN107919371A CN107919371A (zh) 2018-04-17
CN107919371B true CN107919371B (zh) 2022-05-27

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CN (1) CN107919371B (enExample)

Families Citing this family (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108292689B (zh) * 2015-11-27 2021-07-20 京瓷株式会社 光电转换膜和光电转换装置
US11069729B2 (en) * 2018-05-01 2021-07-20 Canon Kabushiki Kaisha Photoelectric conversion device, and equipment
JP2019195051A (ja) * 2018-05-01 2019-11-07 キヤノン株式会社 光電変換装置および機器
CN109065560A (zh) * 2018-08-17 2018-12-21 苏州晶方半导体科技股份有限公司 影像传感芯片的封装方法以及封装结构
JP2020031136A (ja) 2018-08-22 2020-02-27 キヤノン株式会社 撮像装置およびカメラ
WO2020054272A1 (ja) * 2018-09-11 2020-03-19 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置及び電子機器
US11462580B2 (en) * 2019-06-27 2022-10-04 Semiconductor Components Industries, Llc Image sensor packages and related methods
JP7303698B2 (ja) * 2019-08-08 2023-07-05 キヤノン株式会社 半導体装置および機器
US11257858B2 (en) * 2020-04-28 2022-02-22 Himax Technologies Limited Method of fabricating a sensor device
WO2023203919A1 (ja) * 2022-04-20 2023-10-26 ソニーセミコンダクタソリューションズ株式会社 固体撮像装置

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JP2007142207A (ja) * 2005-11-18 2007-06-07 Matsushita Electric Ind Co Ltd 固体撮像装置及びその製造方法
JP2015082566A (ja) * 2013-10-22 2015-04-27 キヤノン株式会社 固体撮像装置、その製造方法及びカメラ
TW201529587A (zh) * 2014-01-21 2015-08-01 Fujifilm Corp 近紅外線吸收性組成物、近紅外線截止濾波器及其製造方法以及照相機模組及其製造方法
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JP2016041481A (ja) * 2014-08-18 2016-03-31 旭硝子株式会社 防眩性反射防止膜付き透明基材および物品

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CN1901215A (zh) 2005-07-20 2007-01-24 松下电器产业株式会社 固体摄像装置及其制造方法
JP4469781B2 (ja) 2005-07-20 2010-05-26 パナソニック株式会社 固体撮像装置及びその製造方法
JP4110192B1 (ja) 2007-02-23 2008-07-02 キヤノン株式会社 光電変換装置及び光電変換装置を用いた撮像システム
JP2008305562A (ja) * 2007-06-05 2008-12-18 Panasonic Corp プラズマディスプレイパネル
JP2009016574A (ja) 2007-07-04 2009-01-22 Panasonic Corp 固体撮像装置およびその製造方法
JP4457142B2 (ja) * 2007-10-17 2010-04-28 シャープ株式会社 固体撮像素子、カメラモジュールおよび電子情報機器
JP5185019B2 (ja) 2008-08-25 2013-04-17 パナソニック株式会社 半導体装置及びそれを用いた電子機器
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JP6103947B2 (ja) 2013-01-16 2017-03-29 キヤノン株式会社 固体撮像装置及びその製造方法
JP6300029B2 (ja) 2014-01-27 2018-03-28 ソニー株式会社 撮像素子、製造装置、製造方法
JP5825398B2 (ja) * 2014-05-19 2015-12-02 ソニー株式会社 固体撮像素子及び固体撮像素子の製造方法、電子機器
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Publication number Priority date Publication date Assignee Title
JP2003037257A (ja) * 2001-07-23 2003-02-07 Toppan Printing Co Ltd 固体撮像素子
JP2007142207A (ja) * 2005-11-18 2007-06-07 Matsushita Electric Ind Co Ltd 固体撮像装置及びその製造方法
JP2015082566A (ja) * 2013-10-22 2015-04-27 キヤノン株式会社 固体撮像装置、その製造方法及びカメラ
TW201529587A (zh) * 2014-01-21 2015-08-01 Fujifilm Corp 近紅外線吸收性組成物、近紅外線截止濾波器及其製造方法以及照相機模組及其製造方法
TW201603256A (zh) * 2014-06-12 2016-01-16 新力股份有限公司 固態成像裝置，固態成像元件之製造方法及成像設備
JP2016041481A (ja) * 2014-08-18 2016-03-31 旭硝子株式会社 防眩性反射防止膜付き透明基材および物品

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US10497733B2 (en) 2019-12-03
JP2018060921A (ja) 2018-04-12
CN107919371A (zh) 2018-04-17
US20180097029A1 (en) 2018-04-05

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