CN107910858A - 低压静电保护电路、芯片电路及其静电保护方法 - Google Patents
低压静电保护电路、芯片电路及其静电保护方法 Download PDFInfo
- Publication number
- CN107910858A CN107910858A CN201711282468.4A CN201711282468A CN107910858A CN 107910858 A CN107910858 A CN 107910858A CN 201711282468 A CN201711282468 A CN 201711282468A CN 107910858 A CN107910858 A CN 107910858A
- Authority
- CN
- China
- Prior art keywords
- diode
- circuit
- low voltage
- electrostatic protection
- ground terminal
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 238000000034 method Methods 0.000 title claims abstract description 17
- 230000001681 protective effect Effects 0.000 claims abstract description 10
- 239000000872 buffer Substances 0.000 claims description 14
- 230000005611 electricity Effects 0.000 claims description 14
- 230000001052 transient effect Effects 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 238000012938 design process Methods 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000003139 buffering effect Effects 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 102100036285 25-hydroxyvitamin D-1 alpha hydroxylase, mitochondrial Human genes 0.000 description 1
- 101000875403 Homo sapiens 25-hydroxyvitamin D-1 alpha hydroxylase, mitochondrial Proteins 0.000 description 1
- 206010048669 Terminal state Diseases 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 230000003068 static effect Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0255—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using diodes as protective elements
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H9/00—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection
- H02H9/04—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage
- H02H9/045—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere
- H02H9/046—Emergency protective circuit arrangements for limiting excess current or voltage without disconnection responsive to excess voltage adapted to a particular application and not provided for elsewhere responsive to excess voltage appearing at terminals of integrated circuits
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/0203—Particular design considerations for integrated circuits
- H01L27/0248—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection
- H01L27/0251—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices
- H01L27/0266—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements
- H01L27/027—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements specially adapted to provide an electrical current path other than the field effect induced current path
- H01L27/0274—Particular design considerations for integrated circuits for electrical or thermal protection, e.g. electrostatic discharge [ESD] protection for MOS devices using field effect transistors as protective elements specially adapted to provide an electrical current path other than the field effect induced current path involving a parasitic bipolar transistor triggered by the electrical biasing of the gate electrode of the field effect transistor, e.g. gate coupled transistors
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Semiconductor Integrated Circuits (AREA)
Abstract
Description
Claims (12)
Priority Applications (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201711282468.4A CN107910858B (zh) | 2017-12-07 | 2017-12-07 | 低压静电保护电路、芯片电路及其静电保护方法 |
PCT/CN2018/119918 WO2019110016A1 (en) | 2017-12-07 | 2018-12-07 | Low-voltage electrostatic discharge (esd) protection circuit, integrated circuit and method for esd protection thereof |
US16/888,545 US11569222B2 (en) | 2017-12-07 | 2020-05-29 | Low-voltage electrostatic discharge (ESD) protection circuit, integrated circuit and method for ESD protection thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201711282468.4A CN107910858B (zh) | 2017-12-07 | 2017-12-07 | 低压静电保护电路、芯片电路及其静电保护方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
CN107910858A true CN107910858A (zh) | 2018-04-13 |
CN107910858B CN107910858B (zh) | 2020-09-18 |
Family
ID=61853807
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201711282468.4A Active CN107910858B (zh) | 2017-12-07 | 2017-12-07 | 低压静电保护电路、芯片电路及其静电保护方法 |
Country Status (3)
Country | Link |
---|---|
US (1) | US11569222B2 (zh) |
CN (1) | CN107910858B (zh) |
WO (1) | WO2019110016A1 (zh) |
Cited By (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2019110016A1 (en) * | 2017-12-07 | 2019-06-13 | Changxin Memory Technologies, Inc. | Low-voltage electrostatic discharge (esd) protection circuit, integrated circuit and method for esd protection thereof |
CN110783328A (zh) * | 2018-07-31 | 2020-02-11 | 立积电子股份有限公司 | 反并联二极管装置 |
US20230055721A1 (en) * | 2021-08-20 | 2023-02-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device and method of manufacturing the same |
Families Citing this family (3)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR20190140216A (ko) * | 2018-06-11 | 2019-12-19 | 에스케이하이닉스 주식회사 | Esd 보호 회로를 포함하는 반도체 집적 회로 장치 |
CN114068518A (zh) | 2020-08-06 | 2022-02-18 | 长鑫存储技术有限公司 | 半导体静电保护器件 |
CN117060362A (zh) * | 2023-09-27 | 2023-11-14 | 上海锐星微电子科技有限公司 | 一种多电源域的静电放电保护电路和esd保护芯片 |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6144542A (en) * | 1998-12-15 | 2000-11-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | ESD bus lines in CMOS IC's for whole-chip ESD protection |
US20050270712A1 (en) * | 2004-06-02 | 2005-12-08 | Shao-Chang Huang | Multi-domain ESD protection circuit structure |
CN101562187A (zh) * | 2008-04-16 | 2009-10-21 | 中国科学院微电子研究所 | 一种绝缘体上硅电路esd全局保护结构 |
CN104051446A (zh) * | 2014-06-25 | 2014-09-17 | 浙江美晶科技有限公司 | 一种多芯片瞬态电压抑制器及用于双信号线任意极瞬态电压或esd放电抑制方法 |
CN105388648A (zh) * | 2015-12-25 | 2016-03-09 | 上海创功通讯技术有限公司 | 液晶显示器及其放电电路 |
Family Cites Families (22)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US5532896A (en) * | 1994-04-26 | 1996-07-02 | Coussens; Eugene | Distributed silicon controlled rectifiers for ESD protection |
US5998245A (en) * | 1998-03-18 | 1999-12-07 | Winbond Electronics Corporation | Method for making seal-ring structure with ESD protection device |
US6249410B1 (en) * | 1999-08-23 | 2001-06-19 | Taiwan Semiconductor Manufacturing Company | ESD protection circuit without overstress gate-driven effect |
JP3908669B2 (ja) * | 2003-01-20 | 2007-04-25 | 株式会社東芝 | 静電気放電保護回路装置 |
TWI240404B (en) * | 2004-06-23 | 2005-09-21 | Novatek Microelectronics Corp | Separated power ESD protection circuit and integrated circuit using the same |
US20080217749A1 (en) * | 2005-07-27 | 2008-09-11 | Fred Matteson | Low Capacitance Transient Voltage Suppressor |
CN101336039A (zh) * | 2007-06-28 | 2008-12-31 | 联华电子股份有限公司 | 静电放电防护设计方法及其相关电路 |
CN101562188B (zh) * | 2008-04-16 | 2012-01-18 | 中国科学院微电子研究所 | 一种改善soi电路esd防护网络用的电阻结构 |
CN101355357A (zh) * | 2008-09-04 | 2009-01-28 | 中国电子科技集团公司第五十八研究所 | Soi/cmos集成电路输出缓冲器的esd保护结构 |
CN101626154B (zh) * | 2009-07-13 | 2011-12-07 | 浙江大学 | 集成电路esd全芯片防护电路 |
CN202394973U (zh) * | 2011-11-03 | 2012-08-22 | 中国电子科技集团公司第五十八研究所 | Soi/cmos集成电路电源与地之间的esd保护结构 |
CN103296665B (zh) * | 2012-03-05 | 2016-04-27 | 北大方正集团有限公司 | 一种瞬态电压抑制器 |
US8848326B2 (en) * | 2012-03-09 | 2014-09-30 | Globalfoundries Singapore Pte. Ltd. | Cross-domain ESD protection scheme |
CN103928454B (zh) * | 2013-01-11 | 2016-10-05 | 中芯国际集成电路制造(上海)有限公司 | 静电放电保护电路 |
CN203967081U (zh) * | 2014-06-25 | 2014-11-26 | 浙江美晶科技有限公司 | 一种多芯片瞬态电压抑制器 |
US9305916B1 (en) * | 2014-12-30 | 2016-04-05 | Hong Kong Applied Science and Technology Research Institute Company, Limited | ESD power clamp for silicon-on-insulator (SOI) and FinFET processes lacking parasitic ESD diode |
CN206040646U (zh) * | 2016-04-26 | 2017-03-22 | 京东方科技集团股份有限公司 | 静电防护与测试复合单元、阵列基板以及显示装置 |
CN107910858B (zh) * | 2017-12-07 | 2020-09-18 | 长鑫存储技术有限公司 | 低压静电保护电路、芯片电路及其静电保护方法 |
CN207782402U (zh) * | 2017-12-07 | 2018-08-28 | 睿力集成电路有限公司 | 低压静电保护电路及芯片电路 |
CN210778581U (zh) * | 2019-12-25 | 2020-06-16 | 苏州晶讯科技股份有限公司 | 一种高可靠性的瞬态电压抑制二极管 |
US11664656B2 (en) * | 2020-03-18 | 2023-05-30 | Mavagail Technology, LLC | ESD protection for integrated circuit devices |
JP2022111601A (ja) * | 2021-01-20 | 2022-08-01 | セイコーエプソン株式会社 | 静電気保護回路、半導体装置、電子機器 |
-
2017
- 2017-12-07 CN CN201711282468.4A patent/CN107910858B/zh active Active
-
2018
- 2018-12-07 WO PCT/CN2018/119918 patent/WO2019110016A1/en active Application Filing
-
2020
- 2020-05-29 US US16/888,545 patent/US11569222B2/en active Active
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6144542A (en) * | 1998-12-15 | 2000-11-07 | Taiwan Semiconductor Manufacturing Co., Ltd. | ESD bus lines in CMOS IC's for whole-chip ESD protection |
US20050270712A1 (en) * | 2004-06-02 | 2005-12-08 | Shao-Chang Huang | Multi-domain ESD protection circuit structure |
CN101562187A (zh) * | 2008-04-16 | 2009-10-21 | 中国科学院微电子研究所 | 一种绝缘体上硅电路esd全局保护结构 |
CN104051446A (zh) * | 2014-06-25 | 2014-09-17 | 浙江美晶科技有限公司 | 一种多芯片瞬态电压抑制器及用于双信号线任意极瞬态电压或esd放电抑制方法 |
CN105388648A (zh) * | 2015-12-25 | 2016-03-09 | 上海创功通讯技术有限公司 | 液晶显示器及其放电电路 |
Cited By (7)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2019110016A1 (en) * | 2017-12-07 | 2019-06-13 | Changxin Memory Technologies, Inc. | Low-voltage electrostatic discharge (esd) protection circuit, integrated circuit and method for esd protection thereof |
US20200294992A1 (en) * | 2017-12-07 | 2020-09-17 | Changxin Memory Technologies, Inc. | Low-voltage electrostatic discharge (esd) protection circuit, integrated circuit and method for esd protection thereof |
US11569222B2 (en) * | 2017-12-07 | 2023-01-31 | Changxin Memory Technologies, Inc. | Low-voltage electrostatic discharge (ESD) protection circuit, integrated circuit and method for ESD protection thereof |
CN110783328A (zh) * | 2018-07-31 | 2020-02-11 | 立积电子股份有限公司 | 反并联二极管装置 |
CN110783328B (zh) * | 2018-07-31 | 2022-09-06 | 立积电子股份有限公司 | 反并联二极管装置 |
US11450656B2 (en) | 2018-07-31 | 2022-09-20 | Richwave Technology Corp. | Anti-parallel diode device |
US20230055721A1 (en) * | 2021-08-20 | 2023-02-23 | Taiwan Semiconductor Manufacturing Company, Ltd. | Semiconductor device and method of manufacturing the same |
Also Published As
Publication number | Publication date |
---|---|
US20200294992A1 (en) | 2020-09-17 |
WO2019110016A1 (en) | 2019-06-13 |
US11569222B2 (en) | 2023-01-31 |
CN107910858B (zh) | 2020-09-18 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN107910858A (zh) | 低压静电保护电路、芯片电路及其静电保护方法 | |
CN201364900Y (zh) | 一种多电源域集成电路的静电放电保护装置 | |
US8830640B2 (en) | Electrostatic discharge protection circuit | |
CN104319275A (zh) | 静电放电保护电路 | |
CN103311239B (zh) | 跨域静电放电保护方案 | |
CN101626154A (zh) | 集成电路esd全芯片防护电路 | |
CN208623330U (zh) | 一种具有防反接电路的esd保护电路 | |
CN103151350B (zh) | 集成电路电源轨抗静电保护的触发电路结构 | |
CN101771035A (zh) | 集成电路 | |
CN108599130A (zh) | 一种具有防反接电路的esd保护电路及其实现方法 | |
CN106410773B (zh) | 增强型堆叠式esd电路及混合电压输入输出接口电路 | |
CN106817122A (zh) | 一种用于宽i/o电源电压范围的输入输出接口电路 | |
CN107894933B (zh) | 支持冷备份应用的cmos输出缓冲电路 | |
CN103247697B (zh) | 去耦电容器及具有该去耦电容器的集成电路 | |
CN207782402U (zh) | 低压静电保护电路及芯片电路 | |
CN104409456A (zh) | 一种soi esd两级保护网络 | |
CN207765950U (zh) | 带静电防护功能的电路、高压集成电路以及空调器 | |
CN105226625A (zh) | 一种双路双向esd保护电路 | |
CN106099887A (zh) | 一种耐高压rc触发式esd电路 | |
CN102437558B (zh) | Esd保护电路 | |
CN106899011A (zh) | 静电保护电路 | |
CN206370683U (zh) | 一种用于实用开关量输入数字信号的光耦隔离防雷电路 | |
CN101854058A (zh) | 一种工作电压可高于vdd的静电保护电路及其应用 | |
CN106415818A (zh) | 半导体装置 | |
CN107946299A (zh) | 一种负载开关及电子设备 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20181011 Address after: 230601 room 630, Hai Heng mansion 6, Cui Wei Road, Hefei economic and Technological Development Zone, Anhui Applicant after: Changxin Storage Technology Co., Ltd. Address before: 230000 room 526, Hai Heng mansion 6, Cui Wei Road, Hefei economic and Technological Development Zone, Anhui Applicant before: Ever power integrated circuit Co Ltd |
|
TA01 | Transfer of patent application right | ||
GR01 | Patent grant | ||
GR01 | Patent grant | ||
CP02 | Change in the address of a patent holder |
Address after: 230601 no.388 Xingye Avenue, Airport Industrial Park, Hefei Economic and Technological Development Zone, Anhui Province Patentee after: CHANGXIN MEMORY TECHNOLOGIES, Inc. Address before: 230601 room 630, Hai Heng mansion 6, Cui Wei Road, Hefei economic and Technological Development Zone, Anhui Patentee before: CHANGXIN MEMORY TECHNOLOGIES, Inc. |
|
CP02 | Change in the address of a patent holder |