CN107858644A - Metallic plate, the manufacture method of metallic plate and the method using metallic plate manufacture deposition mask - Google Patents

Metallic plate, the manufacture method of metallic plate and the method using metallic plate manufacture deposition mask Download PDF

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Publication number
CN107858644A
CN107858644A CN201711267436.7A CN201711267436A CN107858644A CN 107858644 A CN107858644 A CN 107858644A CN 201711267436 A CN201711267436 A CN 201711267436A CN 107858644 A CN107858644 A CN 107858644A
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China
Prior art keywords
metallic plate
deposition mask
sample
face
metal sheet
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Chinese (zh)
Inventor
池永知加雄
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Dai Nippon Printing Co Ltd
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Dai Nippon Printing Co Ltd
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    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/04Coating on selected surface areas, e.g. using masks
    • C23C14/042Coating on selected surface areas, e.g. using masks using masks
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B21MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
    • B21BROLLING OF METAL
    • B21B1/00Metal-rolling methods or mills for making semi-finished products of solid or profiled cross-section; Sequence of operations in milling trains; Layout of rolling-mill plant, e.g. grouping of stands; Succession of passes or of sectional pass alternations
    • B21B1/22Metal-rolling methods or mills for making semi-finished products of solid or profiled cross-section; Sequence of operations in milling trains; Layout of rolling-mill plant, e.g. grouping of stands; Succession of passes or of sectional pass alternations for rolling plates, strips, bands or sheets of indefinite length
    • CCHEMISTRY; METALLURGY
    • C21METALLURGY OF IRON
    • C21DMODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
    • C21D1/00General methods or devices for heat treatment, e.g. annealing, hardening, quenching or tempering
    • C21D1/26Methods of annealing
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/22Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
    • C23C14/56Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
    • C23C14/562Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23CCOATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C14/00Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
    • C23C14/58After-treatment
    • C23C14/5806Thermal treatment
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00Etching metallic material by chemical means
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00Etching metallic material by chemical means
    • C23F1/02Local etching
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00Etching metallic material by chemical means
    • C23F1/02Local etching
    • C23F1/04Chemical milling
    • CCHEMISTRY; METALLURGY
    • C23COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23FNON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
    • C23F1/00Etching metallic material by chemical means
    • C23F1/10Etching compositions
    • C23F1/14Aqueous compositions
    • C23F1/16Acidic compositions
    • C23F1/28Acidic compositions for etching iron group metals
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/10Deposition of organic active material
    • H10K71/16Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
    • H10K71/166Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/40Thermal treatment, e.g. annealing in the presence of a solvent vapour

Abstract

The present invention relates to metallic plate, the manufacture method of metallic plate and the method using metallic plate manufacture deposition mask.It is an object of the invention to provide a kind of metallic plate for making the small deposition mask of warpage.In the case of being etched to the sample obtained from the metallic plate after annealing operation, the curvature k of the warpage of the sample after etching is 0.008mm‑1Below.

Description

Metallic plate, the manufacture method of metallic plate and use metallic plate manufacture deposition mask Method
The application is divisional application, the China national Application No. 201480003438.3 of its original application, and the applying date is On January 10th, 2014, entitled " metallic plate, the manufacture method of metallic plate and the side using metallic plate manufacture deposition mask Method ".
Technical field
The present invention relates to be used for the metallic plate for manufacturing deposition mask by forming more than 2 through holes.The present invention also relates to And the manufacture method of metallic plate.Moreover, it relates to manufactured using metallic plate for being deposited with desired pattern Deposition mask method.
Background technology
In recent years, the display device for being used in the portable devices such as smart mobile phone and tablet personal computer, it is desirable to fine, Such as picture element density is more than 300ppi.In addition, in portable device, need to improve on full HD corresponding to, it is this In the case of, the picture element density requirement of display device is such as more than 450ppi.
Because response is good, power consumption is low, organic EL display is attracted attention.Pixel shape as organic EL display Into method, it is known that method be, using the deposition mask for including the through hole arranged with desired pattern, with desired figure Case forms pixel.Specifically, first, deposition mask is made to be sealed at the substrate of organic EL display, then, will be closely sealed Deposition mask and substrate together put into evaporation coating device, carry out the evaporation of organic material etc..Typically manufacture obtains deposition mask as follows: Through hole is formed on a metal plate by using the etching of photolithographic techniques, so as to manufacture above-mentioned evaporation mask (such as patent document 1).
Prior art literature
Patent document
Patent document 1:Japanese Unexamined Patent Publication 2004-39319 publications
The content of the invention
In the case of the film forming for carrying out deposition material on substrate using deposition mask, not only substrate, deposition mask are also attached Deposition material.For example, there is also along the significantly inclined direction of the normal direction relative to deposition mask in deposition material And fly to the deposition material of substrate, such deposition material can be reached before substrate is reached the wall of the through hole of deposition mask from And adhere to.In this case, it is believed that deposition material is difficult to the wall for adhering to the through hole positioned at deposition mask in a substrate Region near face, as a result, the thickness ratio other parts of the deposition material of attachment are small or produce unattached deposition material Part.I.e., it is possible to think, the evaporation of the near wall of the through hole of deposition mask is unstable.Therefore, in order to form organic EL The pixel of display device and in the case of using deposition mask, the dimensional accuracy and positional precision of pixel reduce, as a result, causing The luminous efficiency of organic EL display reduces.
It is such in order to solve the problems, such as, consider the thickness of the metallic plate for manufacturing deposition mask being thinned.Because By reducing the thickness of metallic plate, the wall face height of the through hole of deposition mask can be made to diminish, thus, can reduced in deposition material Be attached to insertion wall surface of the hole on deposition material ratio.But in order to obtain the small metallic plate of thickness, in rolling mother metal Need to increase rolling rate when manufacturing metallic plate.Here, rolling rate refers to utilize (thickness-metallic plate of mother metal)/(thickness of mother metal Degree) value that calculates.In the case of the heat treatment such as annealing is implemented after rolling, usual rolling rate is bigger, residues in answering for metallic plate Power is that residual stress is also bigger.If residual stress is big, when forming through hole on a metal plate by etching, in metallic plate Implement the side of etching, residual stress eliminates, as a result, warpage occurs for resulting deposition mask.In the case where warpage is big, Deposition mask can not be made fully to be sealed at the substrate of organic EL display, as a result, resulting organic EL display Pixel dimensional accuracy and positional precision reduce.
It is an object of the invention to provide it is a kind of can effectively solve the problems, such as such metallic plate, metallic plate manufacture method and The manufacture method of deposition mask.
1st the present invention relates to a kind of manufacture method of metallic plate, and the metallic plate to be used for by forming more than 2 through holes Deposition mask is manufactured, wherein, the above-mentioned through hole of above-mentioned deposition mask is above-mentioned by being etched to above-mentioned metallic plate to be formed The manufacture method of metallic plate possesses following processes:Rolling process, mother metal is rolled to obtain with thickness t0Above-mentioned gold Belong to plate;And annealing operation, above-mentioned metallic plate is annealed to remove the internal stress of above-mentioned metallic plate, above-mentioned metallic plate has the 1st Face and the 2nd face, the 1st face and the 2nd face are orthogonal relative to the thickness direction of above-mentioned metallic plate and opposite each other, to from above-mentioned In the case that the sample obtained in above-mentioned metallic plate after annealing operation is etched, the curvature of the warpage of the sample after etching K is 0.008mm-1Hereinafter, above-mentioned curvature k is following values:First, length is obtained from the above-mentioned metallic plate after above-mentioned annealing operation 170mm, wide 30mm above-mentioned sample, then, by the both ends in above-mentioned sample except length direction rise region within 10mm with Outer long 150mm, wide 30mm region are as being etched region, from above-mentioned 1st surface side in the region that is etched of above-mentioned sample Whole region is etched to the sample, until the thickness for being etched region reaches 1/3 × t0Above and 2/3 × t0With Under scope in, thereafter, by the above-mentioned sample after etching according to its side be horizontal mode be placed in predetermined mounting table, Then, the above-mentioned of distance x (mm) and above-mentioned sample between the end of the above-mentioned length direction for being etched region of above-mentioned sample is determined The depth y (mm) of the warpage in region is etched, thereafter, distance x between above-mentioned end and above-mentioned depth y is substituted into following formula, thus asked Go out the curvature k,
K=1/ ρ, ρ=(y/2)+(x2/8y)。
In the manufacture method of the metallic plate based on the present invention, above-mentioned annealing operation can stretch above-mentioned gold in length direction While belonging to plate, implemented.
In the manufacture method of the metallic plate based on the present invention, above-mentioned annealing operation can be batched in core in above-mentioned metallic plate Implement in the state of on material.
In the manufacture method of the metallic plate based on the present invention, the thermal coefficient of expansion of preferably above-mentioned mother metal is the heat with substrate The equal value of the coefficient of expansion, on the substrate across the deposition mask manufactured by above-mentioned metallic plate and film forming has deposition material.
In the manufacture method of the metallic plate based on the present invention, above-mentioned metallic plate can contain invar alloy material.
2nd present invention is related to a kind of metallic plate, and the metallic plate is to be steamed by forming more than 2 through holes to be used to manufacture The metallic plate of mask is plated, wherein, above-mentioned metallic plate has thickness t0, also, above-mentioned metallic plate has the 1st face and the 2nd face, and this 1 face and the 2nd face be orthogonal relative to the thickness direction of above-mentioned metallic plate and opposite each other, to being obtained from above-mentioned metallic plate In the case that sample is etched, the curvature k of the warpage of the sample after etching is 0.008mm-1Hereinafter, under above-mentioned curvature k is State value:First, long 170mm, wide 30mm above-mentioned sample are obtained from above-mentioned metallic plate, then, length will be removed in above-mentioned sample Long 150mm beyond the region within 10mm, wide 30mm region are played as being etched region in the both ends in degree direction, from above-mentioned the 1 surface side is etched in the whole region for being etched region of above-mentioned sample to above-mentioned sample, until described be etched region Thickness reaches 1/3 × t0Above and 2/3 × t0According to its side it is water by the above-mentioned sample after etching thereafter in following scope Flat mode is placed in predetermined mounting table, then, determines the end of the above-mentioned length direction for being etched region of above-mentioned sample The depth y (mm) of the above-mentioned warpage for being etched region of distance x (mm) and above-mentioned sample between portion, thereafter, by above-mentioned end spacing Following formula is substituted into from x and above-mentioned depth y, thus obtains above-mentioned curvature k,
K=1/ ρ, ρ=(y/2)+(x2/8y)。
The thermal coefficient of expansion of metallic plate based on present invention value preferably equal with the thermal coefficient of expansion of substrate, the substrate On across the deposition mask manufactured by above-mentioned metallic plate and film forming has deposition material.
Metallic plate based on the present invention can contain invar alloy material.
3rd present invention is related to a kind of manufacture method of deposition mask, and the deposition mask possesses to be penetrated formed with more than 2 The effective coverage in hole and the peripheral region around above-mentioned effective coverage, wherein, the manufacture method includes following processes: Prepare the process of metallic plate, the metallic plate has thickness t0, there is the 1st face and the 2nd face, the 1st face and the 2nd face are relative to above-mentioned The thickness direction of metallic plate is orthogonal and opposite each other;With recess formation process, in the process, etched from above-mentioned 1st surface side State metallic plate, in the region of the above-mentioned metallic plate for forming above-mentioned effective coverage from the 1st surface side formed for mark it is above-mentioned The recess of through hole, in the case where the sample to being obtained from above-mentioned metallic plate is etched, sample after etching sticks up Bent curvature k is 0.008mm-1Hereinafter, above-mentioned curvature k is following values:First, long 170mm, width are obtained from above-mentioned metallic plate 30mm above-mentioned sample, then, by the length in addition to the region within 10mm is played at the both ends of length direction in above-mentioned sample 150mm, wide 30mm region are as region is etched, from above-mentioned 1st surface side in the whole area for being etched region of above-mentioned sample Domain is etched to above-mentioned sample, until the thickness for being etched region reaches 1/3 × t0Above and 2/3 × t0Following model In enclosing, thereafter, the above-mentioned sample after etching is placed in predetermined mounting table according to its side for horizontal mode, then, Distance x (mm) and the above-mentioned of above-mentioned sample between the end of the above-mentioned length direction for being etched region of above-mentioned sample is determined to be etched The depth y (mm) of the warpage in region, thereafter, distance x between above-mentioned end and above-mentioned depth y is substituted into following formula, thus obtained above-mentioned Curvature k,
K=1/ ρ, ρ=(y/2)+(x2/8y)。
In the recess formation process of the manufacture method of the deposition mask based on the present invention, it can exist from above-mentioned 1st surface side The whole region in above-mentioned 1st face is etched to above-mentioned metallic plate.
, can be from above-mentioned 1st surface side in the above-mentioned recess formation process of the manufacture method of the deposition mask based on the present invention Whole region in above-mentioned 1st face is etched to above-mentioned metallic plate, until etched thickness reaches 1/3 × t0Above and 2/3 × t0 In following scope.
In the manufacture method of the deposition mask based on the present invention, the thermal coefficient of expansion for preferably stating metallic plate is and substrate The equal value of thermal coefficient of expansion, on the substrate across the deposition mask manufactured by above-mentioned metallic plate and film forming has deposition material.
In the manufacture method of the deposition mask based on the present invention, above-mentioned metallic plate can contain invar alloy material.
According to the present invention, the small deposition mask of warpage can obtain.Therefore can be to the fully closely sealed deposition mask of substrate, it is tied Fruit, the dimensional accuracy and positional precision of the deposition material being attached on substrate can be improved.
Brief description of the drawings
Fig. 1 is the figure for illustrating one embodiment of the present invention, to show to include the deposition mask device of deposition mask The schematic perspective view of one.
Fig. 2 is the figure of the method for illustrating to be deposited using the deposition mask device shown in Fig. 1.
Fig. 3 is the top partial view diagram for showing the deposition mask shown in Fig. 1.
Fig. 4 is the sectional view along Fig. 3 IV-IV lines.
Fig. 5 is the sectional view along Fig. 3 V-V lines.
Fig. 6 is the sectional view along Fig. 3 line VI -- VI.
Fig. 7 (a) is to show to obtain having the figure of the process of the metallic plate of desired thickness, Fig. 7 by rolling mother metal (b) to show the figure of process annealed to the metallic plate as obtained from rolling.
Fig. 8 (a) is the figure of the sample cut out in the metallic plate for showing to obtain from the process shown in utilization Fig. 7 (a), (b), is schemed 8 (b) is shows as obtained from being etched to the 1st face of the sample shown in Fig. 8 (a) figure of etched sample.
Fig. 9 (a), (b) are the stereogram for showing the appearance that the etched sample shown in Fig. 8 (b) is placed in mounting table And top view.
Figure 10 is a schematic diagram for carrying out overall description for the manufacture method to the deposition mask shown in Fig. 1.
Figure 11 is for the figure of one of the manufacture method for illustrating deposition mask, to show in the section along normal direction Go out the figure of long metal sheet.
Figure 12 is for the figure of one of the manufacture method for illustrating deposition mask, to show in the section along normal direction Go out the figure of long metal sheet.
Figure 13 is for the figure of one of the manufacture method for illustrating deposition mask, to show in the section along normal direction Go out the figure of long metal sheet.
Figure 14 is for the figure of one of the manufacture method for illustrating deposition mask, to show in the section along normal direction Go out the figure of long metal sheet.
Figure 15 is for the figure of one of the manufacture method for illustrating deposition mask, to show in the section along normal direction Go out the figure of long metal sheet.
Figure 16 is for the figure of one of the manufacture method for illustrating deposition mask, to show in the section along normal direction Go out the figure of long metal sheet.
Figure 17 is for the figure of one of the manufacture method for illustrating deposition mask, to show in the section along normal direction Go out the figure of long metal sheet.
Figure 18 is for the figure for the variation for illustrating deposition mask and deposition mask device.
Figure 19 (a)~(c) is the figure for illustrating the method for obtaining sample from metallic plate in embodiment.
Embodiment
One embodiment of the present invention is illustrated referring to the drawings.It is it should be noted that appended in this specification Accompanying drawing in, for the ease of illustrating and it can be readily appreciated that size ratio etc. of the engineer's scale and length and width for material object, suitably comparative example The size of chi and length and width ratio etc. is changed and exaggerated.
Fig. 1~Figure 17 is for illustrating the figure based on one embodiment of the present invention.In following embodiment and its change In shape example, illustrated by taking the manufacture method of deposition mask as an example, the deposition mask is used for when manufacturing organic EL display Organic material is patterned with desired pattern on substrate.But, however it is not limited to such application, for for various use The manufacture method of the deposition mask on way, the applicable present invention.
It should be noted that in this specification, " plate ", " piece ", the term of " film " are not only based on the difference in address Just can mutually it distinguish.For example, " plate " is also comprising the concept that can be described as part as piece or film, thus, for example " metal Plate " and part only not cannot distinguish between out ibid in address for being referred to as " sheet metal " or " metal film ".
In addition, " plate face (unilateral, film surface) " refers in entirety or gross examination of skeletal muscle as the tabular (sheet, membranaceous) of object In the case of part, the face consistent with in-plane as the plate-shaped member (sheet component, film member) of object.Separately Outside, the normal direction that is used for the part of tabular (sheet, membranaceous) refers to the plate face (unilateral, film surface) relative to the part Normal direction.
In addition, on being used in this specification to shape or geometric condition and physical characteristic and their degree Carry out specific such as the term and length such as " parallel ", " orthogonal ", " identical ", " equal ", the value of angle and physical characteristic Deng being not limited to strict implication, but the scope comprising the degree that can expect said function explains.
(deposition mask device)
First, one on the deposition mask device comprising the deposition mask as manufacture method object, referring especially to Fig. 1~Fig. 6 is illustrated.Herein, Fig. 1 is the stereogram of one for showing the deposition mask device comprising deposition mask, and Fig. 2 is For the figure for the application method for illustrating the deposition mask device shown in Fig. 1.Fig. 3 is the vertical view that deposition mask is shown from the 1st surface side Figure, Fig. 4~Fig. 6 are the sectional view of Fig. 3 each position.
Deposition mask device 10 shown in Fig. 1 and Fig. 2 possesses the deposition mask 20 being made up of rectangular metal plate 21 and installation In the framework 15 of the periphery of deposition mask 20.Deposition mask 20 is provided with substantial amounts of through hole 25, and the substantial amounts of through hole 25 is Metallic plate 21 with opposite each other the 1st face 21a and the 2nd face 21b is at least etched from the 1st face 21a and formed.Such as Shown in Fig. 2, the deposition mask device 10 faces the substrate such as glass substrate 92 as evaporation object according to deposition mask 20 Below mode be supported in evaporation coating device 90, for substrate carry out deposition material evaporation.
In evaporation coating device 90, using the magnetic force from magnetite (not shown), deposition mask 20 and glass substrate 92 are closely sealed.Steam In plating appts 90, in the lower section of deposition mask device 10, it is configured with and accommodates deposition material (being luminous organic material as one) 98 crucible 94 and the heater 96 of heating crucible 94.Deposition material 98 in crucible 94 issues in the heating from heater 96 Angerization distils and is attached to the surface of glass substrate 92.As described above, formed with substantial amounts of through hole in deposition mask 20 25, deposition material 98 is attached to glass substrate 92 by the through hole 25.As a result, according to the through hole with deposition mask 20 The corresponding desired pattern in 25 position, the film forming of deposition material 98 is in the surface of glass substrate 92.
(deposition mask)
The following detailed description of deposition mask 20.As shown in figure 1, in present embodiment, deposition mask 20 is by the structure of metallic plate 21 Into there is substantially quadrangle form in top view, further precisely there is substantially rectangular profile in a top view.Evaporation The metallic plate 21 of mask 20, which includes regularly arranged formation, to be had the effective coverage 22 of through hole 25 and surrounds the week of effective coverage 22 Enclose region 23.Peripheral region 23 is the region for supporting effective coverage 22, and it is not intended to evaporation to the evaporation on substrate The region that material passes through.For example, the deposition mask 20 used in the evaporation of the luminous organic material of organic EL display In, effective coverage 22 is and the area for being used to be formed pixel by the evaporation of luminous organic material on substrate (glass substrate 92) The region in deposition mask 20 that domain faces, it is to form made organic EL display substrate with being used on substrate Display surface area surface pair deposition mask 20 in region.But based on various purposes, can also be in the shape of peripheral region 23 Into through hole or recess.In example shown in Fig. 1, each effective coverage 22 has substantially quadrangle form in a top view, enters one Step precisely has substantially rectangular profile in a top view.
In the example in the figures, the effective coverage 22 of more than 2 is along a side parallel with one side of deposition mask 20 Configure to across predetermined interval, while match somebody with somebody along the other direction orthogonal with said one direction across predetermined interval Put.In example illustrated, an effective coverage 22 corresponds to an organic EL display.That is, the evaporation according to Fig. 1 is covered Die device 10 (deposition mask 20), it can carry out repeating evaporation paragraph by paragraph (multiaspect, which is paid, steams).
As shown in figure 3, in the example in the figures, it is effective at this in more than 2 through holes 25 that each effective coverage 22 is formed It is arranged at predetermined intervals respectively along two mutually orthogonal directions in region 22.On the insertion formed on the metallic plate 21 One of hole 25, further it is described in detail referring especially to Fig. 3~Fig. 6.
As shown in Fig. 4~Fig. 6, more than 2 through holes 25 extend between the 1st face 20a and the 2nd face 20b and penetrate evaporation Mask 20, the 1st face 20a are the side along normal direction of deposition mask 20, and the 2nd face 20b is deposition mask 20 The opposite side along normal direction.In example illustrated, as being explained in detail below, from the method as deposition mask 1st face 21a sides of the metallic plate 21 of the side in line direction are by being etched in the 1st recess 30 of formation on metallic plate 21, from as gold The 2nd face 21b sides for belonging to the opposite side of the normal direction of plate 21 form second recesses 35 on metallic plate 21, utilize the 1st recess 30 Through hole 25 is formed with second recesses 35.
As shown in Fig. 3~Fig. 6, from the 1st face 20a lateral 2nd faces 20b sides of deposition mask 20, on the edge of deposition mask 20 The position of normal direction, sectional area of each 1st recess 30 in the section of the plate face along deposition mask 20 gradually becomes It is small.As shown in Figure 3, the wall 31 of the 1st recess 30 in its whole region in the direction that the normal direction with deposition mask 20 is intersected Extension, expose towards the side of the normal direction along deposition mask 20.Similarly, in deposition mask 20 along normal direction Position, sectional area of each second recesses 35 in the section of the plate face along deposition mask 20 can be from deposition mask 20 The 2nd face 20b lateral 1st faces 20a sides taper into.The wall 36 of second recesses 35 its whole region with deposition mask 20 The direction extension that intersects of normal direction, expose towards along the opposite side of normal direction of deposition mask 20.
It should be noted that as shown in Fig. 4~Fig. 6, the wall 31 of the 1st recess 30 passes through with the wall 36 of second recesses 35 The connecting portion 41 of all shapes and connect.Connecting portion 41 is by inclined 1st recess 30 of normal direction relative to deposition mask The crest line of protuberance that wall 31 and the wall 36 of the inclined second recesses 35 of normal direction relative to deposition mask merge into and Mark.Also, connecting portion 41 marks the breakthrough part 42 of the area minimum of through hole 25 in the top view of deposition mask 20.
As shown in Fig. 4~Fig. 6, the 2nd face of the face of the opposite side along normal direction of deposition mask, i.e. deposition mask 20 On 20b, adjacent two through holes 25 are spaced from each other along the plate face of deposition mask.Manufacture method i.e., as be described hereinafter, from steaming The 2nd face 21b sides for plating metallic plate 21 corresponding to the 2nd face 20b of mask 20 are etched to the metallic plate 21 and make second recesses When 35, remaining has the 2nd face 21b of metallic plate 21 between two adjacent second recesses 35.
On the other hand, as shown in Fig. 4~Fig. 6, in deposition mask along the side of normal direction, i.e. deposition mask 20 1st face 20a sides, adjacent two the 1st recesses 30 connect.Manufacture method i.e., as be described hereinafter, from the 1st face with deposition mask 20 When 1st face 21a sides of metallic plate 21 corresponding to 20a are etched to the metallic plate 21 and form 1 recess 30, adjacent two Remaining there will not be the 1st face 21a of metallic plate 21 between individual 1st recess 30.That is, the 1st face 21a of metallic plate 21 is in effective coverage 22 Whole region be etched.Using the 1st face 20a of the deposition mask 20 formed by such 1st recess 30, according to such as figure 1st face 20a of deposition mask 20 shown in 2 in face of deposition material 98 mode use the deposition mask 20 in the case of, can be effective Improve the utilization ratio of deposition material 98.
As shown in Fig. 2 in the case where deposition mask device 10 is contained in evaporation coating device 90, such as double dot dash line in Fig. 4 Shown, the 1st face 20a of deposition mask 20 is located at the side of crucible 94 for maintaining deposition material 98, the 2nd face 20b of deposition mask 20 In face of glass substrate 92.Therefore, deposition material 98 is tapered into by sectional area the 1st recess 30 is attached to glass substrate 92 On.As shown by the arrows in Figure 4, normal direction of the deposition material 98 from crucible 94 to glass substrate 92 not only along glass substrate 92 It is mobile, and sometimes in the larger inclined direction movement of the normal direction relative to glass substrate 92.Now, deposition mask 20 Thickness it is big when, the deposition material 98 of inclination movement much can reach the 1st before glass substrate 92 is reached by through hole 25 The wall 31 of recess 30 and adhere to.In addition, in the region faced with through hole 25 on glass substrate 92, evaporation material can be produced Material 98 is easy to the region reached and is difficult to the part reached.Therefore, in order to improve the utilization ratio (film forming efficiency of deposition material: The ratio being attached on glass substrate 92) and save expensive deposition material and make the film forming that make use of the deposition material of costliness Stablize in desired region and equably implemented, it is important that according to the deposition material 98 for making inclination movement as far as possible The mode for reaching glass substrate 92 forms deposition mask 20.That is, in Fig. 4~Fig. 6 orthogonal with piece face of deposition mask 20 Section in, the minimum angles θ 1 (reference picture 4) that straight line L1 is formed relative to the normal direction of deposition mask 20 is fully become It is favourable greatly, the straight line L1 is recessed by the connecting portion 41 and the 1st for being used as the part with minimum sectional area of through hole 25 Other optional positions of the wall 31 in portion 30.
As one of method for increasing angle, θ 1, it is contemplated that reduce the thickness of deposition mask 20, thus, make The wall 31 of 1st recess 30, the height of the wall 36 of second recesses 35 diminish.I.e., it is possible to say, as forming deposition mask 20 metallic plate 21, preferably using thickness metallic plate 21 as thin as possible in the range of it can ensure that the intensity of deposition mask 20.
As the other method for increasing angle, θ 1, it is also contemplated that optimize the profile of the 1st recess 30.Such as root According to present embodiment, converged by the wall 31 of two adjacent the 1st recesses 30, compared to do not converge with other recesses have with The recess of wall (profile) shown in dotted line, can significantly increase the angle, θ 1.Illustrate its reason below.
As being explained in detail below, the 1st recess 30 be by the 1st face 21a of metallic plate 21 is etched and Formed.By etching the wall shape typically in curved surface of the recess formed, this is curved raised towards erosion direction.Therefore, The wall 31 of the recess formed by etching is precipitous in the region of etching starting side, in the side opposite with etching starting side The most deep side of region, i.e. recess, significantly tilted relative to the normal direction of metallic plate 21.On the other hand, it is illustrated that steaming Plating in mask 20, the wall 31 of adjacent two the 1st recesses 30 converges in etching starting side, therefore, two the 1st recesses 30 The outline of part 43 that converges of front edge 32 of wall 31 be not precipitous shape, but the shape of chamfering.Therefore, may be used So that the wall 31 for forming most 1st recess 30 of through hole 25 effectively inclines relative to the normal direction of deposition mask Tiltedly.I.e., it is possible to increase angle, θ 1.
Using the deposition mask 20 based on present embodiment, the whole region in effective coverage 22, it can effectively increase the 1st The tilt angle theta 1 that the wall 31 of recess 30 is formed with the normal direction of deposition mask.Thus, evaporation material can be effectively improved While the utilization ratio of material 98, implement in high precision and stably the evaporation under desired pattern.
In addition, described in manufacture method as be described hereinafter, from the 1st of metallic plate 21 corresponding with the 1st face 20a of deposition mask 20 the In the case that face 21a sides are etched to the metallic plate 21 and make the 1st recess 30, for forming the effective of deposition mask 20 The whole region of the metallic plate 21 in region 22, the 1st face 21a of the metallic plate 21 are etched because of etching.That is, the edge of deposition mask Peripheral regions 23 along normal direction of the maximum gauge Ta in the effective coverage 22 of normal direction relative to deposition mask Interior maximum gauge Tb is less than 100%.In this way, from the aspect of the utilization ratio for improving deposition material, preferably make effective district Thickness integral thinned in domain 22.On the other hand, from deposition mask intensity aspect, deposition mask along normal direction Effective coverage 22 in maximum gauge Ta be preferably that maximum in the peripheral region 23 along normal direction of deposition mask is thick Spend more than the 50% of Tb.Maximum gauge Ta in effective coverage 22 is more than 50% of the maximum gauge Tb in peripheral region 23 In the case of, when deposition mask 20 is tensioned on framework 15, it can effectively suppress deposition mask 20 in effective coverage 22 Deformation, thus, can effectively implement the evaporation under desired pattern.
But in order to obtain the small metallic plate 21 of thickness, it is necessary to increase during by rolling mother metal to manufacture metallic plate 21 Rolling rate.But rolling rate is bigger, the stress i.e. residual stress for residuing in metallic plate is also bigger.If residual stress is big, losing When carving metallic plate 21 and making deposition mask 20, the side of the implementation etching in metallic plate 21, residual stress is eliminated, its As a result, resulting deposition mask 20 can produce warpage.It it is believed that in the case that warpage is big, can not fill deposition mask 20 It is point close in substrate 92, as a result, the positional precision of evaporation reduces.In addition, in the present embodiment, as described above, to metallic plate It is etched in the wide cut region of 21 the 1st face 21a effective coverage 22, in such as whole region, thus makes deposition mask 20.Therefore, compared with the situation that only the 1st face 21a part is etched, remnants that the 1st face 21a sides of metallic plate 21 are eliminated The degree of stress becomes big, as a result, the possibility that warpage occurs also becomes big.Therefore, as described later, it is important that filter out into To be difficult to produce the metallic plate 21 of warpage during deposition mask 20 to use.
As described above, in present embodiment, through hole 25 configures in a predetermined pattern in each effective coverage 22.Need It is bright, it is intended in the case of carrying out colored display, steaming can be made along the orientation (an above-mentioned direction) of through hole 25 Plating mask 20 (deposition mask device 10) and glass substrate 92 relatively move bit by bit, successively the red organic hair of evaporation The luminous organic material of luminescent material, the luminous organic material of green and blueness.
It should be noted that the framework 15 of deposition mask device 10 is installed on the periphery of the deposition mask 20 of rectangle.Frame Deposition mask is maintained at the state of tensioning by frame 15 in the way of bending deposition mask 20.Deposition mask 20 and framework 15 It is fixed each other by such as spot welding.
Implement the inside of evaporation coating device 90 of the vapor deposition treatment under high-temperature atmosphere.Therefore, during vapor deposition treatment, it is maintained at steaming Deposition mask 20, framework 15 and substrate 92 inside plating appts 90 are also heated.Now, deposition mask, framework 15 and substrate 92 Show the behavior of the change in size based on each thermal expansion.In this case, if deposition mask 20, framework 15 and substrate 92 thermal expansion coefficient difference is larger, then is misplaced because of the difference of their change in size, as a result, being attached to substrate 92 On deposition material dimensional accuracy and positional precision can reduce.It is such in order to solve the problems, such as, preferably deposition mask 20 and frame The thermal coefficient of expansion of frame 15 and the thermal coefficient of expansion of substrate 92 are equal value.For example, use glass substrate 92 as substrate 92 When, as deposition mask 20 and the material of framework 15, the alloy i.e. invar alloy added with 36% nickel in iron can be used Material.
Below to having the function that the present embodiment of such composition and effect illustrate.Here, first to for The manufacture method for manufacturing the metallic plate of deposition mask illustrates.Then deposition mask is manufactured to the metallic plate obtained by using Method illustrates.Thereafter, the method for carrying out the evaporation of deposition material on substrate to the deposition mask obtained by using is carried out Explanation.
(manufacture method of metallic plate)
First, reference picture 7 (a), 7 (b), Fig. 8 (a), 8 (b) and Fig. 9 (a), 9 (b) are said to the manufacture method of metallic plate It is bright.To show to obtain having the figure of the process of the metallic plate of desired thickness by rolling mother metal, Fig. 7 (b) is Fig. 7 (a) The figure of process to being annealed by the metallic plate obtained by rolling is shown.Fig. 8 (a) is to show from utilization Fig. 7 (a), 7 (b) The figure of the sample cut out in the metallic plate that shown process obtains, Fig. 8 (b) are to show by the to the sample shown in Fig. 8 (a) The figure of etched sample obtained from 1 face is etched.Fig. 9 (a), (b) are respectively that the sample for showing to cut out from metallic plate carries The stereogram and top view for the appearance being placed in mounting table.
[rolling process]
First as shown in Fig. 7 (a), prepare the mother metal 55 containing invar alloy material, to including a pair of Rolling rollers 56a, 56b Rolling device 56 transmit the mother metal 55.The mother metal 55 between a pair of Rolling rollers 56a, 56b is reached by a pair of Rolling rollers 56a, 56b Rolling, as a result, the thickness of mother metal 55 reduces, while it is stretched along direction of transfer.Thus, thickness t can be arrived0Long metal sheet 64.As shown in Fig. 7 (a), long metal sheet 64 can be batched in forming coiling body 62 on core 61.
[annealing operation]
Thereafter, accumulated to eliminate because of rolling in the residual stress in long metal sheet 64, as shown in Fig. 7 (b), using moving back Fiery device 57 is annealed to long metal sheet 64., can be while by long metal sheet 64 in direction of transfer (length as shown in Fig. 7 (b) Direction) stretch while implementing annealing operation.As a result, residual stress is can obtain be removed to a certain degree, thickness t0Length Metallic plate 64.As shown in Fig. 7 (b), long metal sheet 64 can be batched in forming coiling body 62 on core 61.Need what is illustrated It is thickness t0Maximum gauge Tb generally equal in the peripheral region 23 of deposition mask 20.
It should be noted that the form of rolling process and annealing operation is not particularly limited to Fig. 7 (a), the shape shown in (b) State.For example, rolling process can be implemented using more than 2 couples Rolling roller 56a, 56b.In addition it is also possible to by the way that work will be rolled Sequence and annealing operation are repeated more than 2 times to make thickness t0Long metal sheet 64.In addition, in Fig. 7 (b), annealing is shown Process stretches long metal sheet 64 while the example implemented in length direction on one side, but is not limited to this, can also It is taken up in long metal sheet 64 and implements annealing operation in the state of core 61.It should be noted that rolled up in long metal sheet 64 It is taken in the case of implementing annealing operation in the state of core 61, the volume with coiling body 62 can be produced on long metal sheet 64 sometimes The problem of taking the corresponding warpage in footpath.Therefore, according to the material for batching footpath, forming mother metal 55 of coiling body 62, while will long gold Belong to plate 64 to stretch in length direction while it is favourable to implement annealing operation.
[inspection operation]
Thereafter, the inspection operation checked the degree of the warpage of resulting long metal sheet 64 is implemented.First, as schemed Shown in 8 (a), long l, wide w and thick t are cut out from long metal sheet 640Sample 75.In Fig. 8 (a), the 1st face of sample 75 and the 2nd Face is represented with symbol 75a and 75b respectively.1st face 75a and the 2nd face 75b is the face orthogonal with the thickness direction of sample 75, and For face opposite each other.In addition, in Fig. 8, extend between the 1st face 75a and the 2nd face 75b and in the length direction of sample 75 A pair of sides represented respectively with symbol 75c and 75d.Long l, wide w and thick t0It can be obtained as described later according to by long metal sheet 64 The size of deposition mask 20 etc. it is appropriate determine, such as reach that long l is 170mm, wide w is 30mm, thick t0For more than 0.020mm and In below 0.100mm scope.
Then, as shown in Fig. 8 (b), from the 1st face 75a sides the 1st face 75a the whole region for being etched region 75f by sample Product 75 etch, until the thickness for being etched region 75f of sample 75 is t1.It should be noted that it is sample to be etched region 75f The region being etched in 75.For example, it is except both ends 75g1,75g2 of length direction rise by sample 75 to be etched region 75f l1、l2Within region beyond region.Length l near both ends 75g1,75g21、l2Region be the area being not etched by Domain.As described later, such region being not etched by ensures the stability of sample 75 when sample 75 is placed in mounting table Aspect etc. play a role.
From Fig. 8 (b), the length l for being etched region 75f of the length direction of sample 753It is the length l from sample 75 In subtract length l1With length l2Length afterwards.Length l1With length l2It is appropriate to determine, so as to which sample 75 is placed in mounting table When ensure the stability of sample 75, such as be 10mm.In this case, the length l for being etched region 75f of length direction3 For 150mm.
The thickness t of sample 75 after etching1It is appropriate according to the degree for the etching for making deposition mask 20 and implementing It is determined that such as thickness t1For 1/3 × t0Above and 2/3 × t0In following scope.Herein, due in sample 75 with to a certain degree Residual stress is have accumulated, therefore by being etched from the 1st face 75a sides to sample 75, warpage is produced in sample 75.It is right below The process for determining the curvature of warpage illustrates.
Method as the warpage for evaluating sample, it is known that method be that the one end for supporting sample makes sample in the air Suspension, while calculate the curvature of sample warpage.But in this case, in the measurement result of the curvature of warpage, not only reflect The key element eliminated due to residual stress, also reflect the key element due to sample deadweight.Accordingly, it is believed that can not be accurate Evaluate the warpage of the sample due to residual stress in ground.Here, according to present embodiment, as shown in Fig. 9 (a), according to sample 75 Side 75c sample 75 is placed in predetermined mounting table 76 for horizontal mode, calculate sticking up for sample 75 in this condition Bent curvature.Therefore, according to present embodiment, the warpage of the sample 75 due to residual stress can more accurately be evaluated. It should be noted that near both ends 75g1,75g2 of sample 75, length l is remained1、l2There is script thickness t0Area Domain, therefore, sample 75 can be made stably to stand in mounting table 76.In addition, the both ends 75g1 of easy sample 75 dominated by hand, 75g2.Further, as described later, when obtaining the operation of sample 75 includes the process for cutting off a part for metallic plate, institute is cut off The influence of the strain of cause is by with script thickness t0Region absorbed, therefore can prevent or suppress to cut off the shadow of caused strain Ring to involve and be etched region 75f.
The curvature k of the warpage for calculating sample 75 specific method is illustrated below.Fig. 9 (b) is shown from upper Top view when side's observation is in the alongst sample 75 of the state of generation warpage.In Fig. 9 (b), sample 75 is eclipsed The a pair of end portions for carving region 75f length direction is represented with symbol 75e.First, to the length for being etched region 75f of sample 75 The depth y (mm) of the warpage for being etched region 75f of distance x (mm) and sample 75 is measured between the end in direction.Need Bright, the depth y of warpage refers to, the straight line that a pair of end portions 75e for being etched region 75f of sample 75 is linked to be and sample 75 It is etched the distance between region 75f maximum.Then, the warpage for being etched region 75f of sample 75 is calculated based on following formula Corresponding radius of curvature ρ.
ρ=(y/2)+(x2/8y)
It is next based on the curvature k that following formula calculates the warpage of sample 75.
K=1/ ρ
In this way, the curvature k (mm of the warpage of sample 75 can be obtained-1)。
Thereafter, the value based on resulting curvature k, the screening of long metal sheet 64 is implemented.Here, the value for selecting curvature k is The long metal sheet 64 of sample 75 below a reference value, above-mentioned long metal is used only in the manufacturing process of deposition mask 20 described later Thus plate 64 implements the screening of long metal sheet 64.According to the positional precision required by the evaporation for having used deposition mask 20 Deng suitably determining a reference value, such as have selected curvature k value is 0.008mm-1The long metal sheet 64 of following sample 75 is recognized It is set to non-defective unit.By as implementation screening, even in because deposition mask 20 manufacturing process etching and in deposition mask In the case of producing warpage in 20, the degree of the warpage can also be made in permissible range.Thus, manufactured evaporation can be improved The characteristic of mask 20.In addition, the yield rate during the manufacturing process of deposition mask 20 can be improved.
It should be noted that as shown in Fig. 9 (a), between mounting table and sample 75, the grade of squared paper 77 can also be set to use In making range determination easy means.Thus, distance x (mm) and the depth y (mm) of warpage measure between above-mentioned end can be made Easily, so as to calculating curvature k rapidly.
In addition, as shown in Fig. 9 (a), can be in the way of the mounting surface 76a of mounting sample 75 can be in above-below direction vibration Hollow bulb 76b is formed in mounting table 76.In this case, first, in mounting table 76 or on mounting table 76 is configured at Sample 75 is loaded on squared paper 77, then, by making mounting surface 76a be shaken in above-below direction mounting surface 76a percussions etc. It is dynamic, so as to make the frictional force for producing to obtain between sample 75 and mounting table 76 or squared paper 77 be eliminated or mitigate. Thus, it can suppress occur the influence of frictional force in the measurement result of curvature.Do not have to mounting table 76 and hollow bulb 76b etc. size It is particularly limited to, such as the width of mounting table 76 and length are 300mm, the thickness of mounting table 76 is 50mm.In addition, mounting table 76 hollow bulb 76b can be formed in the way of the mounting surface 76a of such as mounting table 76 and the thickness of bottom surface are respectively 5mm. The material for forming mounting table 76 is not particularly limited, such as mounting table 76 can be made up of acrylic resin.
(manufacture method of deposition mask)
Below, referring especially to Figure 10~Figure 17, to manufacturing deposition mask 20 using the long metal sheet 64 as above filtered out Method illustrate.In the manufacture method of deposition mask 20 described below, as shown in Figure 10, long metal sheet 64 is supplied, Through hole 25, further severing long metal sheet 64, so as to which the metallic plate 21 obtained by sheet is formed are formed on the long metal sheet 64 Deposition mask 20.
More specifically, the manufacture method of deposition mask 20 includes:The process for the long metal sheet 64 that supply extension becomes band; The etching that make use of photolithographic techniques is implemented on long metal sheet 64, formed on long metal sheet 64 from the 1st face 64a sides The process of 1st recess 30;With the etching that make use of photolithographic techniques is implemented on long metal sheet 64, in long metal sheet The process for forming second recesses 35 on 64 from the 2nd face 64b sides.Also, it is formed at the 1st recess 30 and second recesses of long metal sheet 64 35 mutually communicate, so as to produce through hole 25 on long metal sheet 64.In the example shown in Figure 10, the shape of second recesses 35 Implement into process before the formation process of the 1st recess 30, and in the formation process and the shape of the 1st recess 30 of second recesses 35 Into the process for being further provided with sealing made second recesses 35 between process.Each operation described further below.
Figure 10 shows the manufacture device 60 for making deposition mask 20.As shown in Figure 10, first, prepare long metal Plate 64 is batched in the coiling body 62 formed on core 61.Also, coiling body 62 is unreeled by rotating the core 61, so as to such as The long metal sheet 64 that supply extension becomes band as shown in Figure 10.It should be noted that long metal sheet 64 is formed with through hole 25 The metallic plate 21 of sheet is formed afterwards and then forms deposition mask 20.
The long metal sheet 64 being supplied to is sent to Etaching device (etching unit) 70 by transfer roller 72.Using etching unit 70, implement each processing shown in Figure 11~Figure 17.First, as shown in figure 11, formed on the 1st face 64a of long metal sheet 64 anti- Agent pattern (also referred to as resist) 65a is lost, and Resist patterns is formed (also referred to as on the 2nd face 64b of long metal sheet 64 For resist) 65b.Specifically, it is carried out as follows implementation.First, on the 1st face 64a of long metal sheet 64 (in Figure 11 paper Downside face on) and the 2nd face 64b on be coated with minus photonasty anticorrosive additive material, form resist on long metal sheet 64 Film.Then, glass dry plate is prepared, the glass dry plate is so that light will not be passed through to the region to be removed in resist film, by glass Glass dry plate is configured on resist film.Thereafter, resist film is exposed across glass dry plate, further resist film developed. In this way, Resist patterns (also referred to as resist) 65a can be formed on the 1st face 64a of long metal sheet 64, in long metal sheet 64 The 2nd face 64b on form Resist patterns (also referred to as resist) 65b.
It should be noted that as photonasty anticorrosive additive material, the photonasty anticorrosive additive material of eurymeric can be used.It is this In the case of, as exposed mask, passed through using light is made to the exposed mask in the region to be removed in resist film.
Then, as shown in figure 12, using the Resist patterns 65b formed on long metal sheet 64 as mask, etching solution is used (such as iron chloride (III) solution), from the 2nd face 64b lateral erosions of long metal sheet 64.For example, etching solution from nozzle across against corrosion Agent pattern 65b sprays to the 2nd face 64b of long metal sheet 64,2nd face 64b of the nozzle configuration in the long metal sheet 64 with transmission The side faced.As a result, as shown in figure 12, in the region not covered by Resist patterns 65b in long metal sheet 64, etching Erosion caused by liquid promotes.In this way, substantial amounts of second recesses 35 are formed on long metal sheet 64 from the 2nd face 64b sides.
Thereafter, as shown in figure 13, have indefatigable resin 69 using to etching solution, the second recesses 35 formed are coated to. That is, have indefatigable resin 69 using to etching solution, second recesses 35 are sealed.In the example shown in Figure 13, the film of resin 69 Formed in the way of formed second recesses 35 but also the 2nd face 64b (Resist patterns 65b) of covering are not only covered.
Then, as shown in figure 14, the 2nd etching is carried out to long metal sheet 64.In the 2nd etching, long metal sheet 64 is only It is etched from the 1st face 64a sides, from the 1st face 64a sides, the formation of the 1st recess 30 promotes.Due to the 2nd face 64b of long metal sheet 64 Side is coated with has indefatigable resin 69 to etching solution, therefore, the second recesses for forming desired shape is etched by the 1st time 35 shape is not damaged.
Part based on the erosion of etching being contacted with etching solution in long metal sheet 64 is carried out.Therefore, corrode not only Promote in the normal direction (thickness direction) of long metal sheet 64, also promoted in the direction of the plate face along long metal sheet 64.It is tied Fruit, as shown in figure 15, the normal direction for being etched in long metal sheet 64 promote and the 1st recess 30 is connected with second recesses 35, not only In this way, two the 1st recesses 30 formed respectively in the position that the adjacent two hole 66a with Resist patterns 65a is faced are in place Converge on the inside of bridge portion 67a between two hole 66a.
As shown in figure 16, the etching from the 1st face 64a sides of long metal sheet 64 is pushed further into.As shown in figure 16, it is adjacent What two the 1st recesses 30 merged converges the disengaging of part 43 Resist patterns 65a, being somebody's turn to do under Resist patterns 65a Converge in part 43, corroding caused by etching also promotes in the normal direction (thickness direction) of metallic plate 64.Thus, towards along The sharp part 43 of converging in the side of the normal direction of deposition mask is etched from the side of the normal direction along deposition mask, So as to be chamfered as shown in Figure 16.Thus, the wall 31 of the 1st recess 30 can be made relative to the normal direction institute of deposition mask The tiltangleθ 1 of formation increases.
In this way, the 1st face 64a of the long metal sheet 64 based on etching erosion long metal sheet 64 be used for form effective district Promoted in the whole region in domain 22.Thus, the long metal sheet 64 in the region for forming effective coverage 22 along normal side To maximum gauge Ta compared to etching before long metal sheet 64 maximum gauge Tb it is thinning.
As described above, the etching from the 1st face 64a sides of long metal sheet 64 only promotes amount set in advance, to long metal sheet 64 the 2nd etching terminates.Now, thickness direction of the 1st recess 30 along long metal sheet 64, which extends to, reaches second recesses 35 Opening position, so as to form through hole 25 on long metal sheet 64 using the 1st recess 30 and second recesses 35 that mutually communicate.
Thereafter, as shown in figure 17, resin 69 is removed from long metal sheet 64.Can by using such as alkali system stripper Remove resin film 69.It should be noted that in the case of using alkali system stripper, as shown in figure 17, also removed simultaneously with resin 69 Remove Resist patterns 65a, 65b.
Using to clamp transfer roller 72,72 that the state of the long metal sheet 64 rotated to shearing device (cutting unit) 73 transmission are thusly-formed the long metal sheet 64 of a large amount of through holes 25.It should be noted that by using the transfer roller 72,72 Rotate and act on the tension force (tensile force) of long metal sheet 64, rotate above-mentioned supply core 61, so as to be supplied by coiling body 62 To long metal sheet 64.
Thereafter, the long metal sheet 64 formed with a large amount of recesses 61 is cut into using shearing device (cutting unit) 73 predetermined Length, so as to obtain the sheet metal plate 21 formed with a large amount of through holes 25.
Operate as above, the available deposition mask 20 being made up of the metallic plate 21 formed with a large amount of through holes 25.Here, root According to present embodiment, the whole region of the 1st face 21a of metallic plate 21 in effective coverage 22 is etched.Therefore, deposition mask 20 is made Effective coverage 22 thickness reduce, and can make the 1st face 21a sides formed two the 1st recesses 30 wall 31 elder generation The outline for the part 43 that end margin 32 converges is the shape of chamfering.Therefore, above-mentioned angle, θ 1 can be increased, thus, can be improved The utilization ratio of deposition material and the positional precision of evaporation.
But the whole region of the 1st face 21a of metallic plate 21 in effective coverage 22, which is etched, can increase the 1st face 21a The difference of the degree of the etching of side and the degree of the etching of the 2nd face 21b sides.That is, between the 1st face 21a sides and the 2nd face 21b sides The residual stress that can be eliminated it is unbalanced, or even the metallic plate 21 i.e. warpage of deposition mask 20 can be produced.Here, according to Present embodiment, the long metal sheet 64 for having used the degree of the warpage as described above based on sample 75 to filter out in advance.Therefore, i.e., Make in the case of being had differences in the degree between the 1st face 21a sides and the 2nd face 21b sides in etching, deposition mask can also be made The degree of warpage caused by 20 is in permissible range.Therefore, according to present embodiment, by the thickness for reducing deposition mask 20 The tilt angle theta 1 of the wall 31 of 1st recess 30 of degree and increase deposition mask 20, the utilization ratio of deposition material can be improved Positional precision with evaporation, the reduction for the warpage that can be optimized profile, deposition mask 20 can be made and deposition mask 20 The raising of the yield rate of manufacturing process is realized simultaneously.Therefore, the deposition mask 20 with excellent specific property can be stably provided.
(evaporation coating method)
Then, illustrated to deposition material is deposited using resulting deposition mask 20 in the method on substrate 92. First, as shown in Fig. 2 making deposition mask 20 and substrate 92 closely sealed.Now, deposition mask 20 is tensioned on framework 15, from And make the face of deposition mask 20 parallel to the face of substrate 92.Here, according to present embodiment, the warpage based on sample 75 has been used Degree and the long metal sheet 64 filtered out in advance.Therefore, compared with the situation of such screening is not carried out, deposition mask 20 sticks up Bent degree is equably reduced.Therefore, can be flat relative to substrate 92 by the way that appropriate tension force is put on into deposition mask 20 Deposition mask 20 is kept capablely.That is, in order to correct the warpage caused by the elimination of internal stress (residual stress), without that will make The high-tension that deposition mask 20 produces the degree of fold puts on deposition mask 20.Therefore, it can make deposition mask 20 fully and base Plate 92 is closely sealed, and thereby, it is possible to deposition material is deposited on substrate 92 with high positional precision.Therefore, by evaporation formed with During the pixel of machine EL display devices, the dimensional accuracy and positional precision of the pixel of organic EL display can be improved.Thus, can make Make the organic EL display of fine.
It should be noted that in example shown in above-mentioned present embodiment, more than 2 of deposition mask 20 Effective coverage 22 is configured along a direction parallel with one side of deposition mask 20 across predetermined interval, and edge The other direction orthogonal with said one direction to be configured across predetermined interval.But this is not limited to, such as scheme Shown in 18, deposition mask 20 can also include the effective coverage 22 of more than 2 to be formed a line along a direction and evaporation is covered Die device 10 has more than 2 for arranging and being installed on framework 15 on the direction orthogonal with its length direction (direction) Deposition mask 20.The method of deposition mask as manufacture 20 is not particularly limited.It is, for example, possible to use having and Figure 18 The long metal sheet 64 of the corresponding width of shown deposition mask 20 is metallic plate 21 to manufacture deposition mask 20.Or along After a long metal sheet 64 i.e. direction of metallic plate 21 and other direction form the effective coverage 22 of more than 2, by metallic plate 21 Cut off along its length direction, so as to which the deposition mask 20 shown in Figure 18 can also be made.
Embodiment
The present invention is further illustrated below by embodiment, but as long as without departing from its main points, the present invention is just not limited to The record of following examples.
(making of sample)
First, above-mentioned rolling process and annealing operation are implemented to the mother metal containing invar alloy material, so as to manufacture tool There are 500mm width and t0Thickness the coiling body (the 1st coiling body) that batches of long metal sheet.Thereafter, by the 1st coiling body 300mm length is cut out, so as to obtain the metallic plate 63 shown in Figure 19 (a).In Figure 19 (a), arrow D1 corresponds to rolling process When direction of transfer, rolling direction, arrow D2 corresponds to width during rolling process.
Then, as shown in Figure 19 (b), multi-disc sample 75 is obtained from metallic plate 63.The size of sample 75 be long 170mm × Wide 30mm.It should be noted that the length direction of sample 75 is the direction parallel with arrow D1, and the width of sample 75 For the direction parallel with arrow D2.The piece number that sample 75 is obtained from 1 metallic plate 63 is 15.Taken as from metallic plate 63 The method for obtaining multi-disc sample 75, has used etching.Specifically, first, the 1st surface side of metallic plate 63 and the 2nd surface side this two Side sets Resist patterns, and Resist patterns covering should turn into the region of sample 75 and the outer frame part 63a of metallic plate 63.Connect , using the Resist patterns as mask, metallic plate 63 is etched from the 1st surface side and the 2nd this both sides of surface side.Thus, such as Shown in Figure 19 (b), formd between the region that should turn into sample 75 in the outer frame part 63a and metallic plate 63 of metallic plate 63 Through hole 63b.It should be noted that etching is the connection according to outer frame part 63a and sample 75 for connecting metallic plate 63 Retained portion 63c mode is implemented.Connecting portion 63c size is long 3mm × wide 1mm or so.
Then, as shown in Figure 19 (c), the whole of region 75f is etched in the 1st face 75a from the 1st face 75a sides of sample 75 Individual region is etched to sample 75, until the thickness for being etched region 75f of sample 75 reaches (1/2-8/100) × t0More than And (1/2+8/100) × t0In following scope.Thereafter, by cutting off connecting portion 63c, taken out from metallic plate 63 etched 15 samples 75.It should be noted that region 75f is etched in order to prevent the influence of the strain caused by cut-out from involving, as Connecting portion 63c means are cut off, fine scissors can be used.
It should be noted that forming above-mentioned through hole 63b on metallic plate 63 and make sample 75 is etched region 75f thickness is (1/2-8/100) × t0Above and (1/2+8/100) × t0Same etching can be passed through in following scope Handle and implement simultaneously.
(calculating of the curvature of sample)
Below, it is same with the situation of above-mentioned inspection operation, the song of the warpage in etched each sample 75 is obtained successively Rate k (mm-1).Specifically, first, in the way of the side 75c of sample 75 is horizontal, sample 75 is loaded across squared paper 77 In on the mounting surface 76a of the mounting table 76 formed with hollow bulb 76b.Then, vibration is applied to the mounting surface 76a of mounting table 76, Untill the state of the warpage of visual lower sample 75 does not change.Thereafter, read and be etched using the scale of squared paper 77 The depth y (mm) of the warpage for being etched region 75f of distance x (mm) and sample 75 between the end of region 75f length direction.Connect , radius of curvature ρ corresponding with the warpage for being etched region 75f of sample 75 is calculated based on following formula.
ρ=(y/2)+(x2/8y)
Then, the curvature k of the warpage of sample 75 is calculated based on following formula.
K=1/ ρ
In the curvature k of warpage in 15 samples 75 obtained from the 1st coiling body measurement result, maximum 7.6 ×10-3mm-1
(evaluation of 1 effect)
Using the manufacture method of above-mentioned deposition mask, deposition mask is manufactured by the long metal sheet of the 1st coiling body.Then survey The curling of deposition mask obtained by fixed.It should be noted that curling refers to, situation about deposition mask being placed on horizontal plane The maximum that lower the shown deposition mask in above-below direction rises and falls.As a result, obtained by the long metal sheet of the 1st coiling body The curling of deposition mask is 0.25mm.
(evaluation of 2 effects)
Using the deposition mask made by the long metal sheet of the 1st coiling body, the evaporation of progress deposition material on substrate.Need It is noted that the pattern of a large amount of through holes formed on the deposition mask used is bar corresponding with picture element density 300ppi Line pattern.In addition, as deposition material, the green luminous organic material for radiating green light has been used.Thereafter, on evaporation In each layer of more than 2 layers of the green light emitting layer formed by green with luminous organic material on substrate, their center is determined Coordinate position and feature sizes.In addition, for the centre coordinate position determined and feature sizes, calculate respectively relative to design The bias of value.And judge whether bias is below feasible value.Now, the feasible value of the bias of centre coordinate position is ± 4 μm, the feasible value of the bias of feature sizes is ± 2 μm.As a result, any one of centre coordinate position and feature sizes Bias is below feasible value.That is, any one of the positional precision of deposition material and dimensional accuracy are also good (OK).
The measurement result of the curvature for the sample for showing to obtain from the 1st coiling body in table 1 and on by the 1st coiling body Long metal sheet make above-mentioned 1 effect of deposition mask and the evaluation result of 2 effects.In addition, the feelings with the 1st coiling body Condition similarly, by the mother metal containing invar alloy material produces the coiling body of the 2nd coiling body~the 20th.Further, wound with the 1st The situation of body implements the curvature of the sample obtained from each coiling body similarly, for the coiling body of the 2nd coiling body~the 20th Measure and above-mentioned 1 effect of deposition mask on the long metal sheet making by each coiling body and the evaluation of 2 effects. As a result table 1 is shown in the lump.
【Table 1】
As shown in table 1, the curvature of the sample obtained from the coiling body of the 1st coiling body~the 10th is 0.008mm-1Below. Also, the curling of the deposition mask made by the long metal sheet of the coiling body of the 1st coiling body~the 10th is below 0.25mm.Enter And in the evaporation for having used deposition mask that the long metal sheet by the coiling body of the 1st coiling body~the 10th makes, deposition material Positional precision and dimensional accuracy are good (OK).
In contrast, the curvature of the sample obtained from the coiling body of the 11st coiling body~the 20th is more than 0.008mm-1.Separately Outside, the curling of the deposition mask made by the long metal sheet of the coiling body of the 11st coiling body~the 20th is more than 0.25mm.And then In the evaporation for having used the deposition mask made by the long metal sheet of the coiling body of the 11st coiling body~the 20th, one of deposition material The positional precision and whole dimensional accuracies divided are bad (NG), all bad (NG) in terms of comprehensive.That is, it is deposited on substrate Deposition material positions and dimensions relative to the deviation of design for outside permissible range.
It is possible thereby to think, the curvature by using acquired sample is 0.008mm-1Following coiling body, it can obtain Deposition mask with good evaporation characteristic.
Symbol description
20 deposition masks
1st face of 20a deposition masks
2nd face of 20b deposition masks
21 metallic plates
1st face of 21a metallic plates
2nd face of 21b metallic plates
22 effective coverages
23 peripheral regions
25 through holes
30 the 1st recesses
31 walls
35 second recesses
36 walls
55 mother metals
56 rolling devices
57 annealing devices
61 cores
62 coiling bodies
64 long metal sheets
1st face of 64a long metal sheets
2nd face of 64b long metal sheets
75 samples
1st face of 75a samples
2nd face of 75b samples
75c, 75d side
75f is etched region
76 mounting tables
76a mounting surfaces
76b hollow bulbs
77 squared papers

Claims (7)

1. a kind of metallic plate, the metallic plate is to be used for the metallic plate for manufacturing deposition mask by forming more than 2 through holes, its In,
The metallic plate has thickness t0, also, the metallic plate has the 1st face and the 2nd face, the 1st face and the 2nd face relative to The thickness direction of the metallic plate is orthogonal and opposite each other,
In the case where the sample to being obtained from the metallic plate is etched, the curvature k of the warpage of the sample after etching For 0.008mm-1Hereinafter,
The curvature k is the value obtained as follows:First, long 170mm, wide the 30mm sample are obtained from the metallic plate, Then, by the long 150mm in addition to the region within 10mm is played at the both ends of length direction in the sample, wide 30mm region As region is etched, the sample is lost in the whole region for being etched region of the sample from the 1st surface side Carve, until the thickness for being etched region reaches 1/3 × t0Above and 2/3 × t0In following scope, thereafter, after etching The sample according to its side be horizontal mode be placed in predetermined mounting table, then, determine the described of the sample It is etched the depth y of the warpage for being etched region of distance x (mm) and the sample between the end of the length direction in region (mm) distance x between the end and depth y, thereafter, is substituted into following formula, thus obtains the curvature k,
K=1/ ρ, ρ=(y/2)+(x2/8y)。
2. metallic plate as claimed in claim 1, wherein, the thickness of the metallic plate is below 0.100mm.
3. metallic plate as claimed in claim 2, wherein, the thickness of the metallic plate is more than 0.020mm.
4. metallic plate as claimed in claim 1, wherein, the sample after etching is carried according to its side for horizontal mode It is placed in after predetermined mounting table, mounting table is applied and vibrated.
5. metallic plate as claimed in claim 1, wherein, the thermal coefficient of expansion of the metallic plate is the thermal coefficient of expansion with substrate Equal value, on the substrate across the deposition mask manufactured by the metallic plate and film forming has deposition material.
6. metallic plate as claimed in claim 1, wherein, the metallic plate contains invar alloy material.
7. a kind of manufacture method of deposition mask, methods described include:The process for the long metal sheet that supply extension becomes band;By profit Long metal sheet is implemented on the etching of photolithographic techniques, forms the work of the 1st recess from the 1st surface side on long metal sheet Sequence;With the etching that make use of photolithographic techniques is implemented on long metal sheet, formed on long metal sheet from the 2nd surface side The process of second recesses;Also, the 1st recess and second recesses for being formed at long metal sheet mutually communicate, so as on long metal sheet Through hole is produced, the formation process of second recesses is implemented before the formation process of the 1st recess, and in the formation of second recesses The process sealed to made second recesses is further provided between process and the formation process of the 1st recess.
CN201711267436.7A 2013-01-10 2014-01-10 Metallic plate, the manufacture method of metallic plate and the method using metallic plate manufacture deposition mask Pending CN107858644A (en)

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