JP2019049044A - Substrate for vapor deposition mask, manufacturing method for the same, manufacturing method for vapor deposition mask and manufacturing method for display device - Google Patents

Abstract

To provide a substrate for a vapor deposition mask, a manufacturing method for the same, a manufacturing method for the vapor deposition mask and a manufacturing method for a display device capable of improving accuracy of a pattern formed through vapor deposition.SOLUTION: In a substrate for a vapor deposition mask, a shape along a longitudinal direction of a metal plate to form a vapor deposition mask at each position in a width direction of the metal plate is a series of waves aligned in the longitudinal direction of the metal plate. A length of a straight line connecting neighboring troughs of the waves is defined as a wavelength. A percentage of a height of the wave with respect to the wavelength is defined as unit steepness. An average of the unit steepness of all the waves in the longitudinal direction is defined as steepness. Then, the maximum value of the steepness at central sections RC in the width direction of the metal plate is 0.3% or less. The maximum value of the steepness at respective edge sections RE in the width direction of the metal plate is 0.6% or less. The maximum value of the steepness at least one of edge sections RE in the width direction of the metal plate is smaller than the maximum value of the steepness at the central sections RC in the width direction of the metal plate.SELECTED DRAWING: Figure 4

Description

  The present invention relates to a substrate for a vapor deposition mask, a method of manufacturing a substrate for a vapor deposition mask, a method of manufacturing a vapor deposition mask, and a method of manufacturing a display device.

  The deposition mask comprises a first surface and a second surface. The first surface faces an object such as a substrate, and the second surface is opposite to the first surface. The hole penetrating from the first surface to the second surface includes a first opening located on the first surface and a second opening located on the second surface. The vapor deposition material entering the holes from the second opening forms a pattern on the object that follows the position of the first opening and the shape of the first opening (see, for example, Patent Document 1).

JP, 2015-055007, A

  The holes provided in the deposition mask have a cross-sectional area that increases from the first opening to the second opening, thereby increasing the number of deposition materials entering the holes from the second opening to reach the first opening Secure the quantity of substance. On the other hand, a part of the vapor deposition material which enters the hole from the second opening does not reach the first opening, and adheres not a little to the wall surface which divides the hole. The deposited material attached to the wall prevents passage of the holes by other deposited materials and reduces the dimensional accuracy of the pattern.

  In recent years, for the purpose of reducing the volume of the deposition material adhering to the wall surface, it is considered to reduce the thickness of the deposition mask and reduce the area of the wall surface itself. Then, as a technique for reducing the thickness of the deposition mask, it has been studied to reduce the thickness itself of the metal plate which is a substrate for manufacturing the deposition mask.

  On the other hand, in the etching process for forming holes in the metal plate, the thinner the thickness of the metal plate, the smaller the volume of the metal to be removed. Therefore, the tolerance is narrowed under the processing conditions such as the time for supplying the etching solution to the metal plate and the temperature of the supplied etching, and as a result, sufficient accuracy can be obtained for the dimensions of the first opening and the second opening. I want to. In particular, in the technology for manufacturing a metal plate, rolling is used to extend a base material by a roller or electrolysis in which a metal plate deposited on an electrode is peeled off from the electrode, and a corrugated shape is formed on the metal plate itself. In the metal plate having such a shape, the contact time between the metal plate and the etching solution is, for example, largely different between the wave-like peak and the wave-like valley, and the above-mentioned allowable range is narrowed. Deterioration of accuracy is further aggravated. As described above, the technique of reducing the thickness of the deposition mask can reduce the amount of deposition material attached to the wall surface, thereby improving the pattern dimension accuracy in repeated deposition, but in each deposition, A new issue is being raised that makes it difficult to obtain the accuracy required for pattern dimensions.

  An object of the present invention is to provide a substrate for a vapor deposition mask, a method of manufacturing a substrate for a vapor deposition mask, a method of manufacturing a vapor deposition mask, and a method of manufacturing a display device, which can improve the accuracy of a pattern formed by vapor deposition. is there.

  The substrate for vapor deposition mask for solving the above-mentioned problems is a substrate for vapor deposition mask which is a belt-like metal plate having a plurality of holes formed by etching and used for manufacturing the vapor deposition mask, and the metal The shape along the longitudinal direction of the metal plate at each position in the width direction of the plate is different from each other, and each shape has a wave repeating in the longitudinal direction of the metal plate, and one valley in the wave The length of the straight line connecting from the bottom to the other valley is the length of the wave, and the percentage of the height of the wave to the length of the wave is the unit steepness, and at each position in the width direction of the metal plate, The average value of the unit steepness in all the waves included in the longitudinal direction is the steepness, and the maximum value of the steepness in the central portion in the width direction of the metal plate is 0.3% or less, The maximum value of the steepness at each end in the width direction of the metal plate is It is 0.6% or less, and the maximum value of the steepness at at least one of both end portions in the width direction of the metal plate is smaller than the maximum value of the steepness at the central portion in the width direction of the metal plate .

  The manufacturing method of the base material for vapor deposition masks for solving the said subject is a manufacturing method of the base material for vapor deposition masks which is a metal plate which has a strip | belt shape by which several holes are formed by etching and are used for manufacture of a vapor deposition mask. And forming the metal plate by rolling a base material, wherein the shapes along the longitudinal direction of the metal plate at respective positions in the width direction of the metal plate are different from each other, Has a wave repeating in the longitudinal direction of the metal plate, and the length of a straight line connecting one valley to the other valley in the wave is the wave length, and the height of the wave relative to the wave length The percentage of height is unit steepness, and at each position in the width direction of the metal plate, the average value of unit steepness in all waves included in the longitudinal direction is the steepness, and the metal plate is obtained In the middle of the metal plate in the width direction, The maximum value of the degree is 0.3% or less, the maximum value of the steepness at each end in the width direction of the metal plate is 0.6% or less, and both ends in the width direction of the metal plate The base material is rolled so that the maximum value of the steepness in at least one of the parts is smaller than the maximum value of the steepness in the central portion in the width direction of the metal sheet.

  The manufacturing method of the vapor deposition mask for solving the said subject forms a several hole in the said metal plate by forming a resist layer in the metal plate which has strip shape, and etching using the said resist layer as a mask, and a mask Forming a portion, wherein the shapes along the longitudinal direction of the metal plate at respective positions in the width direction of the metal plate are different from each other, And a wave repeating in the longitudinal direction of the metal plate, and a length of a straight line connecting one valley to the other valley in the wave is a wave length, and the height of the wave relative to the wave length Percentage is the unit steepness, and at each position in the width direction of the metal plate, the average value of the unit steepness of all the waves included in the longitudinal direction is the steepness, and in the width direction of the metal plate The maximum steepness at the center of the .3% or less, the maximum value of the steepness at each end in the width direction of the metal plate is 0.6% or less, and at least one of both ends in the width direction of the metal plate The maximum value of the steepness is smaller than the maximum value of the steepness at the central portion in the width direction of the metal plate.

  According to the substrate for vapor deposition mask, the maximum value of the steepness at at least one end is smaller than the maximum value of the steepness at the central part, so that the wave undulation on the surface of the central part is at least It gets harder than one end. As a result, the liquid supplied to the surface of the deposition mask substrate can easily flow from the central portion to at least one end, and further from the at least one end to the outside of the deposition mask substrate. As a result, the flow of the liquid supplied to the surface of the deposition mask substrate is less likely to stagnate, and the processing uniformity using the treatment with the etching liquid, that is, the uniformity of the pores of the deposition mask substrate, As a result, it is possible to improve the accuracy of the pattern formed by vapor deposition.

  In the vapor deposition mask base material, the maximum value of the steepness at one of the end portions is smaller than the maximum value of the steepness at the central portion, and the maximum value of the steepness at the other end is The difference between the maximum value of the steepness at one of the ends and the maximum value of the steepness at the other of the ends is greater than or equal to 0.2%. It may be 0.4% or less. According to this vapor deposition mask substrate, the wave undulation on the surface of one end is gentler than that of the central portion, and the wave undulation on the surface of the other end is 0.6%. Even though it has the following steepness, it is more intense than the central part. Such a substrate for vapor deposition mask can easily flow the liquid supplied to the surface of the substrate for vapor deposition mask from the other end to one end and further from one end to the outside of the substrate for vapor deposition mask .

  In the substrate for vapor deposition mask, the maximum value of the steepness at one of the end portions and the maximum value of the steepness at the other end portion is smaller than the maximum value of the steepness at the central portion, The maximum value of the steepness at both ends and the maximum value of the steepness at the central part may be 0.2% or less. According to this vapor deposition mask substrate, the undulations of the waves on the surface of the central portion are more severe than the respective end portions while having a steepness of 0.3% or less, and therefore the surface of the vapor deposition mask substrate It is easy to flow the liquid supplied to the center from the center to each end, and further from each end to the outside of the deposition mask substrate 1.

  In the method of manufacturing the vapor deposition mask, forming the mask portion is forming a plurality of the mask portions on a single metal plate, and each of the mask portions has the plurality of holes 1 The two side surfaces are separately provided, and the side surfaces of the respective mask portions and the one frame portion are joined together such that the one frame portion surrounds the plurality of holes for each of the mask portions. It is also possible to include further. According to the method of manufacturing the vapor deposition mask, since the side surface of each mask portion and the frame portion of one body are joined, in the vapor deposition mask provided with a plurality of mask portions, the stability of the shape in each mask portion is enhanced. It also becomes possible.

  The manufacturing method of the display device for solving the said subject includes preparing the vapor deposition mask by the manufacturing method of the said vapor deposition mask, and forming a pattern by vapor deposition using the said vapor deposition mask.

  According to each of the above configurations, the accuracy of the pattern formed by vapor deposition can be improved.

The perspective view which shows the base material for vapor deposition masks. The top view which shows the base material for a measurement. The figure for showing the graph for explaining steepness with the section structure of the substrate for measurement. Graph to explain steepness. The top view which shows the planar structure of a mask apparatus. Sectional drawing which shows partially an example of the cross-section of a mask part. Sectional drawing which shows partially the other example of the cross-section of a mask part. Sectional drawing which shows partially an example of the bonded structure of the edge of a mask part, and a flame | frame part. Sectional drawing which shows partially the other example of the bonded structure of the edge of a mask part, and a flame | frame part. (A) The top view which shows an example of the planar structure of a vapor deposition mask, (b) Sectional drawing which shows an example of the cross-section of a vapor deposition mask. (A) The top view which shows the other example of the planar structure of a vapor deposition mask, (b) Sectional drawing which shows the other example of the cross-section of a vapor deposition mask. Process drawing which shows the rolling process for manufacturing the base material for vapor deposition masks. Process drawing which shows the heating process for manufacturing the base material for vapor deposition masks. Process drawing which shows the etching process for manufacturing a mask part. Process drawing which shows the etching process for manufacturing a mask part. Process drawing which shows the etching process for manufacturing a mask part. Process drawing which shows the etching process for manufacturing a mask part. Process drawing which shows the etching process for manufacturing a mask part. Process drawing which shows the etching process for manufacturing a mask part. (A)-(h) process drawing explaining an example of the manufacturing method of a vapor deposition mask. (A)-(e) Process drawing explaining an example of the manufacturing method of a vapor deposition mask. (A)-(f) Process drawing explaining an example of the manufacturing method of a vapor deposition mask. The top view which shows the planar structure of the measurement base material in each Example with a dimension. The graph which shows the steepness of Example 1 by each position of the width direction. The graph which shows the steepness of Example 2 by each position of the width direction. The graph which shows the steepness of Example 3 by each position of the width direction. The graph which shows the steepness of the comparative example 1 by each position of the width direction. The graph which shows the steepness of the comparative example 2 by each position of the width direction. The graph which shows the steepness of the comparative example 3 by each position of the width direction.

An embodiment of a substrate for a deposition mask, a method of manufacturing a substrate for a deposition mask, a method of manufacturing a deposition mask, and a method of manufacturing a display will be described with reference to FIGS. 1 to 29.
[Composition of base material for vapor deposition mask]

  As FIG. 1 shows, the base material 1 for vapor deposition masks is a metal plate which had strip shape. The deposition mask substrate 1 has a wave shape having waves repeated in the longitudinal direction DL at each position in the width direction DW which is the lateral direction. The respective positions in the width direction DW of the deposition mask substrate 1 have different wave shapes. In mutually different wave shapes, the number of waves included in the wave shape, the length of the waves, the height of the waves, etc. are different from each other. In addition, in FIG. 1, in order to demonstrate the shape which the base material 1 for vapor deposition masks has, a wave shape is exaggerated and shown rather than actual. The thickness which the base material 1 for vapor deposition masks has is 15 micrometers or more and 50 micrometers or less. The uniformity of the thickness of the deposition mask substrate 1 is such that, for example, the ratio of the difference between the maximum thickness value and the minimum thickness value to the average thickness value is 5% or less.

The material constituting the deposition mask substrate 1 is nickel or an iron-nickel alloy, for example, an iron-nickel alloy containing 30% by mass or more of nickel, and in particular, 36% by mass nickel and 64% by mass iron It is preferable to use an alloy as the main component, that is, invar. When based on an alloy of 36% by mass nickel and 64% by mass iron, the balance contains additives such as chromium, manganese, carbon, cobalt and the like. When the material constituting the deposition mask substrate 1 is Invar, the thermal expansion coefficient of the deposition mask substrate 1 is, for example, about 1.2 × 10 ⁻⁶ / ° C. If it is the base material 1 for vapor deposition masks which has such a thermal expansion coefficient, the change of the size by the thermal expansion in the mask manufactured from the base material 1 for vapor deposition masks and the thermal expansion in a glass substrate or a polyimide sheet It is preferable to use a glass substrate or a polyimide sheet as an example of the object to be vapor-deposited, since the change in size is the same degree.

Steepness
When the deposition mask substrate 1 is placed on a horizontal surface, the position (height) of the surface of the deposition mask substrate 1 with respect to the horizontal surface is the surface position.
As shown in FIG. 2, in the measurement of the surface position, first, a slit process is performed in which the deposition mask substrate 1 is cut in the entire width direction DW (full width), and the longitudinal direction of the deposition mask substrate 1 is implemented. The measurement base 2M is cut out as a part of the DL. The dimension W in the width direction DW of the measurement substrate 2M is equal to the dimension in the width direction DW of the deposition mask substrate 1. Next, for the surface 2S of the measurement base 2M, the surface position at each position in the longitudinal direction DL is measured at predetermined intervals in the width direction DW. The range over which the surface position is measured is the measurement range ZL. The measurement range ZL is a range excluding the non-measurement range ZE which is both ends in the longitudinal direction DL of the measurement substrate 2M. The slit process which cut | disconnects the base material 1 for vapor deposition masks can form new wave shape different from the base material 1 for vapor deposition masks in the base material for measurement. The length in the longitudinal direction DL of each non-measurement range ZE is a range in which such a new wave shape can be formed, and is a range excluded from the measurement of the surface position. The length of each non-measurement range ZE in the longitudinal direction DL is, for example, 100 mm.

  FIG. 3 is a graph showing an example of the surface position at each position in the longitudinal direction DL of the measurement substrate 2M, showing the surface position as well as the sectional structure in the cross section including the longitudinal direction DL of the measurement substrate 2M. It is. In addition, in FIG. 3, the example which has three waves in the longitudinal direction DL among each site | parts of width direction DW is shown.

  As FIG. 3 shows, each position of the longitudinal direction DL where a surface position is measured is located in the space | interval which can copy the waveform shape of the base material 1 for vapor deposition masks. Each position in the longitudinal direction DL where the surface position is measured is, for example, aligned at intervals of 1 mm in the longitudinal direction DL. The line LC connecting the surface position of each position in the longitudinal direction DL is considered as a line along the surface of the deposition mask substrate 1, and the length of the line LC is the creepage distance on the surface of the deposition mask substrate 1 It is. In each wave included in the line LC, the length of a straight line connecting one valley to the other valley in the wave is the wave lengths L1, L2, and L3. In each wave included in the line LC, the heights with respect to the straight line connecting the valleys of the waves are the heights H1, H2, and H3 of the waves. The unit steepness of the vapor deposition mask substrate 1 is the percentage of the wave height to the wave length, and in the example shown in FIG. 3, the height H1 / length L1 × 100 (%), the height H2 / The length is L2 × 100 (%), and the height H3 / the length L3 × 100 (%). The steepness of the deposition mask substrate 1 is an average value of unit steepnesses of all the waves included in the longitudinal direction DL at each position in the width direction DW. In the example shown in FIG. 3, the steepnesses of the deposition mask substrate 1 are height H1 / length L1 × 100 (%), height H2 / length L2 × 100 (%), and height H3 / It is an average value of length L3 x 100 (%).

  FIG. 4 shows the steepness of each position in the width direction DW of the deposition mask substrate 1. The solid line shown in the upper part of FIG. 4 is an example in which the steepness of the central portion RC in the width direction DW is larger than that of the both ends RE, and the solid line shown in the lower part of FIG. The steepness of the end portion RE is an example larger than the steepness of the central portion RC and the steepness of the other end portion RE.

As shown in FIG. 4, the steepness of the deposition mask substrate 1 has a maximum value at the central portion RC in the width direction DW and a local minimum value in the vicinity of the boundary between the central portion RC and the end portion RE. And the steepness degree of the base material 1 for vapor deposition masks increases from the center part RC toward the both ends RE of the width direction DW. Center part RC of cross direction DW makes center PC in cross direction DW of base material 1 for vapor deposition masks the center in cross direction DW of center part RC. The length in the width direction DW of the central portion RC in the width direction DW is 40% of the length in the width direction DW of the deposition mask substrate 1. The length in the width direction DW of each end RE in the width direction DW is 30% of the length in the width direction DW of the deposition mask substrate 1. The steepness of the deposition mask substrate 1 satisfies the following three conditions.
[Condition 1] The maximum value of the steepness in the central portion RC in the width direction DW is 0.3% or less.
[Condition 2] The maximum value of the steepness at each end RE in the width direction DW is 0.6% or less.
[Condition 3] The maximum value of the steepness in at least one of the end portions RE in the width direction DW is smaller than the maximum value of the steepness in the central portion RC in the width direction DW.

  As indicated by the solid line in the upper part of FIG. 4, in the example satisfying Condition 3, the maximum value of the steepness at each end RE is smaller than the maximum value of the steepness at the central part RC. That is, in the base material 1 for vapor deposition masks, the undulations of the waves on the surface of the central portion RC are more severe than those of the end portions RE. Such a deposition mask substrate 1 transfers the liquid supplied to the surface of the deposition mask substrate 1 from the central portion RC to each end RE, and further from each end RE to the outside of the deposition mask substrate 1 It is easy to flow.

  As shown by the solid line in the lower part of FIG. 4, in another example satisfying Condition 3, the maximum value of the steepness at one end RE is smaller than the maximum value of the steepness at the central part RC, and The maximum value of the steepness at the other end RE is larger than the maximum value of the steepness at the central portion RC. That is, in the deposition mask substrate 1, the wave undulation on the surface of one end RE is gentler than that of the central portion RC, and the wave undulation on the surface of the other end RE is the central It is more violent than the department RC. Such a substrate 1 for vapor deposition mask uses the liquid supplied to the surface of the substrate 1 for vapor deposition mask from the other end RE to one end RE, and further, from one end RE to the substrate for vapor deposition mask It is easy to flow to the outside of 1.

  The liquid supplied to the surface of the deposition mask substrate 1 is, for example, a developer for developing a resist layer located on the surface of the deposition mask substrate 1, and a washing solution for removing the developer from the surface. . The liquid supplied to the surface of the deposition mask substrate 1 is, for example, an etching solution for etching the deposition mask substrate 1 and a cleaning solution for removing the etching solution from the surface. Further, the liquid supplied to the surface of the deposition mask substrate 1 is, for example, for removing a stripping solution for stripping off a resist layer remaining on the surface of the deposition mask substrate 1 after etching, and a stripping solution from the surface. Cleaning fluid.

  And if it is said each structure which does not produce stagnation in the flow of the liquid supplied to the surface of the substrate 1 for vapor deposition masks, the uniformity of the process using the process by a liquid is the surface of the substrate 1 for vapor deposition masks It will be possible to raise within. Moreover, in order to prevent the surface RC of the central portion RC from becoming excessively rough, the central portion RC satisfies the condition 1 and each surface of the end portion RE is not excessively rugged. If the configuration satisfies the condition 2, it is possible to secure the adhesion between the resist layer and the deposition mask substrate 1 and the accuracy of exposure to the resist layer. Moreover, if the configuration satisfies the conditions 1 and 2, it is possible to suppress the displacement when transporting the deposition mask substrate 1 by the roll-to-roll method, so that stagnation does not easily occur in the flow of the liquid. Combined, it is possible to further improve the processing uniformity.

  In the example not satisfying the condition 3, the maximum value of the steepness at each end RE is equal to or larger than the maximum value of the steepness at the central portion RC. That is, the undulations of the waves on the surfaces of the end portions RE are stronger than the undulations of the waves on the surface of the central portion RC. In the deposition mask substrate 1 described above, the liquid supplied to the surface of the deposition mask substrate 1 is likely to flow from each end RE to the outside of the deposition mask substrate 1 while the center from each end RE It is easy to flow to RC. As a result, liquid pool is likely to be generated in the central portion RC, which causes the processing uniformity using the treatment with liquid to be reduced in the surface of the deposition mask substrate 1. As described above, the configuration satisfying the condition 3 and the effect obtained thereby are generated by processing the surface using a liquid generated by the difference between the sharpness at the central portion RC and the sharpness at each end portion RE. It is the first to be derived by recognizing the problem of

[Configuration of mask device]
FIG. 5 shows a schematic planar structure of a mask apparatus provided with a vapor deposition mask manufactured using the vapor deposition mask substrate 1. FIG. 6 shows an example of the cross-sectional structure of the mask part provided in the vapor deposition mask, and FIG. 7 shows another example of the cross-sectional structure of the mask part provided in the vapor deposition mask. Note that the number of deposition masks provided in the mask apparatus and the number of mask parts provided in the deposition mask 30 are examples.

  As shown in FIG. 5, the mask apparatus 10 includes a main frame 20 and three deposition masks 30. The main frame 20 has a rectangular frame shape supporting the plurality of deposition masks 30, and is attached to a deposition apparatus for performing deposition. Main frame 20 has main frame holes 21 penetrating main frame 20 substantially throughout the range in which each deposition mask 30 is located.

  Each vapor deposition mask 30 includes a plurality of frame portions 31 having a band plate shape, and three mask portions 32 in each frame portion 31. The frame portion 31 has a rectangular plate shape to support the mask portion 32 and is attached to the main frame 20. The frame portion 31 has a frame hole 33 penetrating the frame portion 31 substantially throughout the range in which the mask portion 32 is located. The frame portion 31 has rigidity higher than that of the mask portion 32 and has a frame shape surrounding the frame hole 33. Each of the mask portions 32 is fixed by welding or adhesion to the inner edge portion of the frame portion 31 which divides the frame hole 33 one by one.

  As shown in FIG. 6, an example of the mask unit 32 includes a mask plate 323. The mask plate 323 may be a single plate member formed of the vapor deposition mask substrate 1, or a laminate of a single plate member formed of the vapor deposition mask substrate 1 and a resin plate. It may be. In addition, in FIG. 6, it shows as a sheet member of 1 sheet formed from the base material 1 for vapor deposition masks.

  The mask plate 323 includes a first surface 321 (the lower surface in FIG. 6) and a second surface 322 (the upper surface in FIG. 6) which is a surface opposite to the first surface 321. The first surface 321 faces a deposition target such as a glass substrate in a state where the mask apparatus 10 is attached to the deposition apparatus. The second surface 322 faces the deposition source of the deposition apparatus. The mask portion 32 has a plurality of holes 32 H penetrating the mask plate 323. The wall surface of the hole 32H has an inclination in a sectional view with respect to the thickness direction of the mask plate 323. The shape of the wall surface of the hole 32H may be a semicircular arc projecting toward the outside of the hole 32H as shown in FIG. 6 in a cross sectional view, or a complicated curved shape having a plurality of bending points May be

  The thickness of the mask plate 323 is 1 μm to 50 μm, preferably 2 μm to 20 μm. If the thickness of the mask plate 323 is 50 μm or less, the depth of the holes 32H formed in the mask plate 323 can be 50 μm or less. As described above, in the case of the thin mask plate 323, it is possible to reduce the area of the wall surface of the hole 32H and to reduce the volume of the vapor deposition material attached to the wall surface of the hole 32H.

  The second surface 322 includes a second opening H2 which is an opening of the hole 32H, and the first surface 321 includes a first opening H1 which is an opening of the hole 32H. The second opening H2 is larger than the first opening H1 in a plan view. Each hole 32H is a passage through which the deposition material sublimated from the deposition source passes, and the deposition material sublimated from the deposition source advances from the second opening H2 to the first opening H1. If the second opening H2 is a hole 32H larger than the first opening H1, it is possible to increase the amount of deposition material that enters the hole 32H from the second opening H2. The area of the hole 32H in a cross section along the first surface 321 may increase monotonously from the first opening H1 to the second opening H2 from the first opening H1 to the second opening H2, or It is also possible to provide a portion that is substantially constant halfway from the one opening H1 to the second opening H2.

  As shown in FIG. 7, another example of the mask portion 32 has a plurality of holes 32 H penetrating the mask plate 323. The second opening H2 is larger than the first opening H1 in a plan view. The hole 32H is configured of a large hole 32LH having a second opening H2 and a small hole 32SH having a first opening H1. The cross-sectional area of the large hole 32LH monotonously decreases from the second opening H2 toward the first surface 321. The cross-sectional area of the small hole 32SH monotonously decreases from the first opening H1 toward the second surface 322. The wall surface of the hole 32H has a shape projecting inward of the hole 32H at a portion where the large hole 32LH and the small hole 32SH are connected, that is, in the middle of the mask plate 323 in the thickness direction. The distance between the portion of the hole 32H protruding from the wall surface and the first surface 321 is the step height SH. In the example of the cross-sectional structure described in FIG. 6, the step height SH is zero. From the viewpoint of easily securing the amount of vapor deposition material reaching the first opening H1, a configuration in which the step height SH is zero is preferable. In the configuration in which the mask portion 32 having a step height SH of zero is obtained, the thickness of the mask plate 323 is thin, for example, 50 μm or less, to the extent that the holes 32H are formed by wet etching from one side of the deposition mask substrate 1 is there.

[Joint structure of mask section]
FIG. 8 shows an example of the cross-sectional structure of the joint structure between the mask portion 32 and the frame portion 31. As shown in FIG. FIG. 9 shows another example of the cross-sectional structure of the joint structure between the mask portion 32 and the frame portion 31.

  As in the example shown in FIG. 8, the outer edge 32E of the mask plate 323 is a region not provided with the hole 32H. A portion included in the outer edge portion 32E of the mask plate 323 in the second surface 322 of the mask plate 323 is an example of a side surface of the mask portion, and is joined to the frame portion 31. The frame portion 31 includes an inner edge portion 31 </ b> E that defines the frame hole 33. The inner edge portion 31E includes a bonding surface 311 (lower surface in FIG. 8) facing the mask plate 323 and a non-bonding surface 312 (upper surface in FIG. 8) which is a surface opposite to the bonding surface 311. The thickness T31 of the inner edge portion 31E, that is, the distance between the bonding surface 311 and the non-bonding surface 312 is sufficiently larger than the thickness T32 of the mask plate 323, whereby the frame portion 31 has higher rigidity than the mask plate 323. Have. In particular, the frame portion 31 has high rigidity against the inner edge portion 31E hanging down by its own weight and the inner edge portion 31E being displaced toward the mask portion 32. The bonding surface 311 of the inner edge portion 31E includes a bonding portion 32BN bonded to the second surface 322.

  Junction 32BN is located continuously or intermittently over substantially the entire circumference of inner edge 31E. The bonding portion 32BN may be a welding mark formed by welding of the bonding surface 311 and the second surface 322, or may be a bonding layer bonding the bonding surface 311 and the second surface 322. The frame portion 31 joins the bonding surface 311 of the inner edge portion 31E and the second surface 322 of the mask plate 323, and applies stress F to the mask plate 323 such that the mask plate 323 is pulled toward the outside thereof. Add.

  The frame portion 31 is also stressed by the main frame 20 to the same extent as the stress F on the mask plate 323 so as to be pulled toward the outside thereof. Therefore, in the deposition mask 30 removed from the main frame 20, the stress due to the connection between the main frame 20 and the frame portion 31 is released, and the stress F applied to the mask plate 323 is also alleviated. The position of the bonding portion 32 BN at the bonding surface 311 is preferably a position that causes the stress F to act isotropically on the mask plate 323, and is appropriately selected based on the shape of the mask plate 323 and the shape of the frame hole 33. Be done.

  The bonding surface 311 is a flat surface on which the bonding portion 32 BN is located, and extends from the outer edge 32 E of the second surface 322 toward the outside of the mask plate 323. In other words, the inner edge portion 31E has a surface structure in which the second surface 322 is virtually expanded to the outside thereof, and extends from the outer edge portion 32E of the second surface 322 toward the outside of the mask plate 323. Therefore, in the range where the bonding surface 311 spreads, the space V corresponding to the thickness of the mask plate 323 is easily formed around the mask plate 323. As a result, it is possible to suppress physical interference between the vapor deposition target S and the frame portion 31 around the mask plate 323.

  Also in the example shown in FIG. 9, the outer edge portion 32E of the second surface 322 has a region in which the hole 32H is not formed. The outer edge portion 32E of the second surface 322 is bonded to the bonding surface 311 of the frame portion 31 through bonding by the bonding portion 32BN. Then, the frame portion 31 applies a stress F to the mask plate 323 such that the mask plate 323 is pulled toward the outside thereof, and a space V equivalent to the thickness of the mask plate 323 in a range where the bonding surface 311 spreads. Form

  In addition, the mask board 323 in the state which the stress F does not act may have a wave shape not a little like the base material 1 for vapor deposition masks. And the mask board 323 in the state to which the stress F mentioned above acts, ie, the mask board 323 mounted in the vapor deposition mask 30, may deform | transform so that the height of a wave may be made low. In this respect, in the case of the deposition mask substrate 1 satisfying the above conditions 2 and 3, even if deformation due to the stress F occurs, it is suppressed to an acceptable level, and as a result, the holes 32H in the deposition mask 30 are obtained. It is also possible to suppress the deformation of and improve the accuracy of the position and shape of the pattern.

[Quantity of mask section]
FIG. 10 shows an example of the relationship between the number of holes 32H provided in the vapor deposition mask 30 and the number of holes 32H provided in the mask section 32. Further, FIG. 11 shows another example of the relationship between the number of holes 32H provided in the vapor deposition mask 30 and the number of holes 32H provided in the mask portion 32.

  As the example of FIG. 10A shows, the frame portion 31 has three frame holes 33 (33A, 33B, 33C). As the example of FIG. 10B shows, the vapor deposition mask 30 is provided with one mask portion 32 (32A, 32B, 32C) for each frame hole 33. An inner edge portion 31E partitioning the frame hole 33A is bonded to one mask portion 32A, and an inner edge portion 31E partitioning the frame hole 33B is bonded to another mask portion 32B to partition the frame hole 33C. The inner edge portion 31E is joined to the other mask portion 32C.

  Here, the deposition mask 30 is repeatedly used for a plurality of deposition targets. Therefore, each hole 32H provided in the vapor deposition mask 30 can be required to have higher accuracy in the position of the hole 32H, the structure of the hole 32H, and the like. Then, if the desired accuracy can not be obtained for the position of the hole 32H, the structure of the hole 32H, etc., the mask portion 32 should be replaced as appropriate, regardless of whether the deposition mask 30 is manufactured or repaired. Is desired.

  In this respect, as shown in FIG. 10, if the number of holes 32H required for one frame portion 31 is shared by three mask portions 32, temporarily replacing one mask portion 32. It is sufficient to replace only one mask portion 32 out of the three mask portions 32 even when it is desired. That is, of the three mask units 32, the two mask units 32 can be used continuously. Therefore, with the configuration in which separate mask portions 32 are joined to each frame hole 33, it is possible to suppress the consumption of various materials required for manufacturing the vapor deposition mask 30 or repairing the vapor deposition mask 30. It will be. The smaller the thickness of the mask plate 323 and the smaller the holes 32H, the easier it is for the yield of the mask portion 32 to be lowered, and the demand for replacement of the mask portion 32 is large. Therefore, the above-mentioned configuration in which each frame hole 33 is provided with a separate mask portion 32 is particularly suitable for the deposition mask 30 that requires high resolution.

  The inspection regarding the position of the hole 32H and the structure of the hole 32H is preferably performed in a state in which the stress F is applied, that is, in a state in which the mask portion 32 is joined to the frame portion 31. From such a point of view, it is preferable that, for example, the above-described bonding portion 32BN be intermittently present in part of the inner edge portion 31E so as to enable replacement of the mask portion 32.

  As the example of FIG. 11A shows, the frame portion 31 has three frame holes 33. As shown in the example of FIG. 11B, the vapor deposition mask 30 can also be provided with a single mask portion 32 common to the frame holes 33. At this time, the inner edge 31E that defines the frame hole 33A, the inner edge 31E that defines the frame hole 33B, and the inner edge 31E that defines the frame hole 33C are joined to one mask portion 32 common to them.

  If the number of holes 32H required for one frame portion 31 is carried by one mask portion 32, then the number of mask portions 32 joined to the frame portion 31 should be one. Thus, it is possible to reduce the load required for joining the frame portion 31 and the mask portion 32. As the thickness of the mask plate 323 constituting the mask portion 32 is larger and the size of the hole 32H is larger, the yield of the mask portion 32 is easily increased, and the request for replacement of the mask portion 32 is smaller. Therefore, the structure provided with the mask part 32 common to each flame | frame hole 33 is especially suitable in the vapor deposition mask 30 in which a low resolution is calculated | required.

[Method of producing base material for vapor deposition mask]
Next, the manufacturing method of the base material for vapor deposition masks is demonstrated. In addition, in the manufacturing method of the base material for vapor deposition masks, the form using rolling and the form using electrolysis are illustrated separately. First, an embodiment using rolling will be described, and then an embodiment using electrolysis will be described. 12 and 13 show an example using rolling.

  In the manufacturing method using rolling, as shown in FIG. 12, first, a base material 1 a formed of invar or the like, which extends in the longitudinal direction DL, is prepared. Next, the base material 1a is transported toward the rolling device 50 such that the longitudinal direction DL of the base material 1a and the transport direction for transporting the base material 1a are parallel to each other. The rolling device 50 includes, for example, a pair of rolling rollers 51 and 52, and rolls the base material 1a with the pair of rolling rollers 51 and 52. As a result, the base material 1a is stretched in the longitudinal direction DL, and the rolled material 1b is formed. The rolling material 1b may be wound around the core C, for example, or may be handled in a state of being stretched in a band shape. The thickness of the rolling material 1 b is, for example, 10 μm or more and 50 μm or less.

  Next, as shown in FIG. 13, the rolling material 1 b is transported to the annealing device 53. The annealing device 53 heats the rolling material 1b while pulling it in the longitudinal direction DL. By this, the accumulated residual stress is removed from the inside of the rolling material 1b, and the deposition mask substrate 1 is formed. At this time, the pressing force between the rolling rollers 51 and 52, the rotation speed of the rolling rollers 51 and 52, the annealing temperature of the rolling material 1b, and the like are set so that the conditions 1, 2 and 3 are satisfied.

In the manufacturing method using electrolysis, the deposition mask substrate 1 is formed on the electrode surface used for the electrolysis, and then the deposition mask substrate 1 is released from the electrode surface. When the material which comprises the base material 1 for vapor deposition masks is Invar, the electrolytic bath used for electrolysis contains an iron ion supply agent, a nickel ion supply agent, and a pH buffer. The electrolytic bath used for electrolysis may contain a stress relaxation agent, an Fe ³⁺ ion masking agent, a complexing agent such as malic acid or citric acid, and the like, and is a weakly acidic solution adjusted to a pH suitable for electrolysis. The iron ion supply agent is, for example, ferrous sulfate heptahydrate, ferrous chloride, iron sulfamate and the like. The nickel ion supply agent is, for example, nickel (II) sulfate, nickel (II) chloride, nickel sulfamate, nickel bromide. pH buffers are, for example, boric acid, malonic acid. Malonic acid also functions as a Fe ³⁺ ion masking agent. The stress relaxation agent is, for example, saccharin sodium. The electrolytic bath used for electrolysis is, for example, an aqueous solution containing the above-described additive, and is adjusted to have a pH of 2 or more and 3 or less, for example, by a pH adjuster such as 5% sulfuric acid or nickel carbonate. .

Under the electrolysis conditions used for the electrolysis, the temperature of the electrolytic bath, the current density and the electrolysis time are appropriately adjusted according to the thickness of the deposition mask substrate 1, the composition ratio of the deposition mask substrate 1, and the like. The anodes applied to the above-described electrolytic bath are, for example, made of pure iron and nickel. The cathode applied to the above-described electrolytic bath is, for example, a stainless steel plate such as SUS304. The temperature of the electrolytic bath is, for example, 40 ° C. or more and 60 ° C. or less. The current density is, for example, 1 A / dm ² or more and 4 A / dm ² or less. At this time, the current density at the electrode surface is set so that the conditions 1, 2 and 3 are satisfied.

  In addition, the base material 1 for vapor deposition masks by electrolysis, and the base material 1 for vapor deposition masks by rolling may be processed further thinner by chemical polishing or electrical polishing. The polishing solution used for chemical polishing is, for example, a chemical polishing solution for iron-based alloys containing hydrogen peroxide as a main component. The electrolytic solution used for the electrical polishing is a perchloric acid-based electrolytic polishing solution or a sulfuric acid-based electrolytic polishing solution. Under the present circumstances, since the said conditions 1, 2, and 3 are satisfy | filled, the dispersion | variation in the surface of the base material 1 for vapor deposition masks is suppressed about the result of grinding | polishing by polishing liquid, and the result of washing | cleaning of polishing liquid by washing | cleaning liquid.

[Manufacturing method of mask part]
A process for manufacturing the mask portion 32 shown in FIG. 7 will be described with reference to FIGS. 14 to 19. In the process for manufacturing the mask portion 32 described in FIG. 6, the large hole 32LH is formed by using the small hole 32SH as a through hole in the process for manufacturing the mask portion 32 described in FIG. Since it is the same as the process which omitted the process of (1), the overlapping description is omitted.

  As FIG. 14 shows, when manufacturing a mask part, the base material 1 for vapor deposition masks containing 1st surface 1Sa and 2nd surface 1Sb first, and the 1st dry film resist stuck on 1st surface 1Sa ( A dry film resist (DFR) 2 and a second dry film resist (DFR) 3 to be attached to the second surface 1Sb are prepared. Each of DFRs 2 and 3 is formed separately from the deposition mask substrate 1. Next, the first DFR 2 is attached to the first surface 1 Sa, and the second DFR 3 is attached to the second surface 1 Sb.

  As shown in FIG. 15, the portions of DFRs 2 and 3 other than the portion where holes are to be formed are exposed, and the DFR after exposure is developed. As a result, the first through holes 2 a are formed in the first DFR 2, and the second through holes 3 a are formed in the second DFR 3. When developing DFR after exposure, for example, an aqueous solution of sodium carbonate is used as a developer. Under the present circumstances, since the said conditions 1, 2, and 3 are satisfy | filled, the dispersion | variation in the surface of the base material 1 for vapor deposition masks is suppressed about the result of development by a developing solution, and the result of washing | cleaning by the washing | cleaning liquid. As a result, it becomes possible to improve the uniformity in the surface of the deposition mask substrate 1 with respect to the shape and size of the first through holes 2a and the shape and size of the second through holes 3a.

  As shown in FIG. 16, for example, using the first DFR 2 after development as a mask, the first surface 1 Sa of the vapor deposition mask substrate 1 is etched using a ferric chloride solution. At this time, the second protective layer 61 is formed on the second surface 1Sb so that the second surface 1Sb is not etched simultaneously with the first surface 1Sa. The material of the second protective layer 61 has chemical resistance to ferric chloride solution. As a result, the small holes 32SH recessed toward the second surface 1Sb are formed in the first surface 1Sa. The small hole 32SH has a first opening H1 opened to the first surface 1Sa. Under the present circumstances, since the said conditions 1, 2, and 3 are satisfy | filled, the dispersion | variation in the surface of the base material 1 for vapor deposition masks is suppressed about the result of the etching by etching liquid, and the result of washing | cleaning by the washing | cleaning liquid. As a result, with regard to the shape and size of the small holes 32SH, it is possible to improve the uniformity within the surface of the deposition mask substrate 1.

  The etching solution for etching the deposition mask substrate 1 is an acidic etching solution, and in the case where the deposition mask substrate 1 is composed of invar, it is an etching solution capable of etching invar. Good. The acidic etching solution may be, for example, any of perchloric acid, hydrochloric acid, sulfuric acid, formic acid and acetic acid to a mixed solution of ferric perchlorate and ferric perchlorate and ferric chloride. It is a mixed solution of The method for etching the deposition mask substrate 1 may be a dip method in which the deposition mask substrate 1 is immersed in an acidic etching solution, or a spray method in which the acidic etching solution is sprayed on the deposition mask substrate 1 It may be

  Next, as shown in FIG. 17, the first DFR 2 formed on the first surface 1 Sa and the second protective layer 61 in contact with the second DFR 3 are removed. Further, the first protective layer 4 for preventing the further etching of the first surface 1Sa is formed on the first surface 1Sa. The material of the first protective layer 4 has chemical resistance to ferric chloride solution.

  Next, as shown in FIG. 18, the second surface 1Sb is etched using a ferric chloride solution using the second DFR 3 after development as a mask. As a result, a large hole 32LH recessed toward the first surface 1Sa is formed in the second surface 1Sb. The large hole 32LH has a second opening H2 that opens to the second surface 1Sb. In a plan view facing the second surface 1Sb, the second opening H2 is larger than the first opening H1. Under the present circumstances, since the said conditions 1, 2, and 3 are satisfy | filled, the dispersion | variation in the surface of the base material 1 for vapor deposition masks is suppressed about the result of the etching by etching liquid, and the result of washing | cleaning of the etching liquid by washing | cleaning liquid. As a result, with respect to the shape and size of the large holes 32LH, it is possible to improve the uniformity in the surface of the deposition mask substrate 1. The etching solution used at this time is also an acidic etching solution, and in the case where the deposition mask substrate 1 is made of invar, it may be an etching solution capable of etching invar. The method for etching the deposition mask substrate 1 may also be a dip method in which the deposition mask substrate 1 is dipped in an acidic etching solution, or a spray for spraying the acidic etching solution on the deposition mask substrate 1 It may be a formula.

  Next, as shown in FIG. 19, by removing the first protective layer 4 and the second DFR 3 from the deposition mask base 1, a plurality of small holes 32SH and large holes 32LH connected to the small holes 32SH are formed. The mask 32 is obtained.

  In addition, in the manufacturing method using rolling, metal oxides, such as aluminum oxide and magnesium oxide, are contained not a little in the base material 1 for vapor deposition masks. That is, when the above-described base material 1a is formed, usually, a deoxidizer such as granular aluminum or magnesium is mixed with the raw material in order to suppress the mixing of oxygen into the base material 1a. And aluminum and magnesium remain in the base material 1a not a little as metal oxides, such as aluminum oxide and magnesium oxide. In this respect, according to the manufacturing method using electrolysis, mixing of the metal oxide into the mask portion 32 can be suppressed.

[Method of manufacturing deposition mask]
Each example of the manufacturing method of a vapor deposition mask is demonstrated. An example (first manufacturing method) in a method of forming a hole by wet etching will be described with reference to FIG. Moreover, with reference to FIG. 21, the example (2nd manufacturing method) in the method of forming a hole by electrolysis is demonstrated. Moreover, with reference to FIG. 22, the other example (3rd manufacturing method) in the method of forming a hole by electrolysis is demonstrated.

[First manufacturing method]
The method of manufacturing a vapor deposition mask including the mask portion 32 described in FIG. 6 and the method of manufacturing a vapor deposition mask including the mask portion 32 described in FIG. However, the other steps are almost the same. Below, the manufacturing method of a vapor deposition mask provided with the mask part 32 demonstrated in FIG. 6 is mainly demonstrated, and the duplicate description is abbreviate | omitted regarding the manufacturing method of the vapor deposition mask provided with the mask part 32 demonstrated in FIG.

  As an example which Drawing 20 (a)-(h) shows, with an example of a manufacturing method of a vapor deposition mask, substrate 32K is prepared first (refer to Drawing 20 (a)). In addition to the above-described deposition mask base 1 processed as the mask plate 323, the base 32K preferably further includes a support SP for supporting the deposition mask base 1. The first surface 321 of the substrate 32K (the lower surface in FIG. 20) corresponds to the first surface 1Sa, and the second surface 322 of the substrate 32K (the upper surface in FIG. 20) corresponds to the second surface 1Sb. Do.

  First, a resist layer PR is formed on the second surface 322 of the base 32K (see FIG. 20B), and exposure and development are performed on the resist layer PR to form a resist mask RM on the second surface 322. (Refer FIG.20 (c)). Next, holes 32H are formed in the base 32K by wet etching from the second surface 322 using the resist mask RM (see FIG. 20D).

  At this time, a second opening H2 is formed in the second surface 322 where wet etching is started, and a first opening smaller than the second opening H2 is formed in the first surface 321 where etching is performed later than that. H1 is formed. Next, the resist mask RM is removed from the second surface 322 to form the mask portion 32 (see FIG. 20E). Finally, the outer edge portion 32E of the second surface 322 is bonded to the inner edge portion 31E of the frame portion 31, and the support SP is released from the mask portion 32, whereby the deposition mask 30 is manufactured (FIG. f) to (h)).

  In the method of manufacturing a vapor deposition mask including the mask portion 32 described in FIG. 7, the above-described steps are performed on the surface of the base 32K corresponding to the first surface 321 in the base 32K not having the support SP. Thus, the small holes 32SH are formed. Next, a resist or the like for protecting the small holes 32SH is filled in the small holes 32SH. Then, the process mentioned above is given to the field of substrate 32K corresponding to the 2nd field 322, and, thereby, mask part 32 is manufactured.

  In the example shown in FIG. 20F, resistance welding is used as a method of joining the outer edge portion 32E of the second surface 322 to the inner edge portion 31E of the frame portion 31. At this time, a plurality of holes SPH are formed in the insulating support SP. Each hole SPH is formed in a portion of the support SP opposite to the portion to be the bonding portion 32 BN. Then, electricity is supplied through the holes SPH to form intermittent junctions 32BN. Thus, the outer edge portion 32E and the inner edge portion 31E are welded.

  Further, in the example shown in FIG. 20 (g), laser welding is used as a method of joining the outer edge portion 32E of the second surface 322 to the inner edge portion 31E of the frame portion 31. At this time, the laser beam L is irradiated to a portion to be the bonding portion 32 BN through the support SP using the support SP having light transparency. Then, by intermittently irradiating the laser light L around the outer edge portion 32E, the intermittent bonding portion 32BN is formed. Alternatively, by continuously irradiating the laser light L continuously around the outer edge 32E, a continuous bond 32BN is formed over the entire circumference of the outer edge 32E. Thus, the outer edge portion 32E and the inner edge portion 31E are welded.

  Further, in the example shown in FIG. 20H, ultrasonic welding is used as a method of bonding the outer edge portion 32E of the second surface 322 to the inner edge portion 31E of the frame portion 31. At this time, the outer edge portion 32E and the inner edge portion 31E are held by a clamp CP or the like, and an ultrasonic wave is applied to a portion to be the joint portion 32BN. The member to which the ultrasonic wave is directly applied may be the frame portion 31 or the mask portion 32. In addition, when ultrasonic welding is used, the crimping | compression-bonding mark by clamp CP is formed in the flame | frame part 31 or support body SP.

  In addition, in each joining mentioned above, it is also possible to perform welding and welding in the state which applied the stress which turned to the outer side with respect to the mask part 32. FIG. In addition, when the support SP supports the mask portion 32 in a state in which the stress directed to the outside of the mask portion 32 is applied, the application of the stress to the mask portion 32 can be omitted. It is.

[Second manufacturing method]
The vapor deposition mask described in FIGS. 8 and 9 can be manufactured by other examples shown in FIGS. 21A to 21E, in addition to the first manufacturing method.
As in the example shown in FIGS. 21A to 21E, first, a resist layer PR is formed on the electrode surface EPS that is the surface of the electrode EP used for electrolysis (see FIG. 21A). Then, the resist layer PR is exposed and developed to form a resist mask RM on the electrode surface EPS (see FIG. 21B). The resist mask RM has an inverted frustum shape in a cross section orthogonal to the electrode surface EPS, and has a shape in which the area in the cross section along the electrode surface EPS is larger as the distance from the electrode surface EPS is larger. Next, electrolysis using the electrode surface EPS having the resist mask RM is performed to form a mask portion 32 in the region other than the resist mask RM in the electrode surface EPS (see FIG. 21C).

  At this time, in order to form the mask portion 32 other than the space occupied by the resist mask RM, a hole having a shape following the shape of the resist mask RM is formed in the mask portion 32. That is, the holes 32H of the mask portion 32 are formed in the mask portion 32 in a self-aligned manner. The surface in contact with the electrode surface EPS functions as the first surface 321 having the first opening H1, and the outermost surface having the second opening H2 which is an opening larger than the first opening H1 serves as the second surface 322. Function.

  Next, only the resist mask RM is removed from the electrode surface EPS to form a hole 32H in which the first opening H1 to the second opening H2 are hollow (see FIG. 21D). Finally, the bonding surface 311 of the inner edge 31E is joined to the outer edge 32E of the second surface 322 having the second opening H2, and then the stress for peeling the mask 32 from the electrode surface EPS is applied to the frame 31 Add. Thus, the vapor deposition mask 30 in a state in which the mask portion 32 is bonded to the frame portion 31 is manufactured (see FIG. 21E).

[Third manufacturing method]
The vapor deposition mask described in FIGS. 8 and 9 can be manufactured by other examples shown in FIGS. 21A to 21E, in addition to the first manufacturing method.
As in the example shown in FIGS. 22A to 22F, first, a resist layer PR is formed on the electrode surface EPS used for electrolysis (see FIG. 22A). Then, the resist layer PR is exposed and developed to form a resist mask RM on the electrode surface EPS (see FIG. 22B). The resist mask RM has a frustum shape in a cross section orthogonal to the electrode surface EPS, and has a shape in which the area in the cross section along the electrode surface EPS is smaller as the distance from the electrode surface EPS is larger. Next, electrolysis is performed using the electrode surface EPS having the resist mask RM, and a mask portion 32 is formed in a region other than the resist mask RM in the electrode surface EPS (see FIG. 22C).

  Also in this case, in order to form the mask portion 32 other than the space occupied by the resist mask RM, a hole having a shape following the shape of the resist mask RM is formed in the mask portion 32. That is, the holes 32H in the mask portion 32 are formed in the mask portion 32 in a self-aligned manner. The surface in contact with the electrode surface EPS functions as the second surface 322 having the second opening H2, and the outermost surface having the first opening H1 which is smaller than the second opening H2 serves as the first surface 321. Function.

  Next, only the resist mask RM is removed from the electrode surface EPS to form a hole 32H which is hollow from the first opening H1 to the second opening H2 (see FIG. 22D). Then, the intermediate transfer base material TM is bonded to the first surface 321 having the first opening H1, and then stress for peeling the mask portion 32 from the electrode surface EPS is applied to the intermediate transfer base material TM. Thus, the second surface 322 is separated from the electrode surface EPS in a state where the mask portion 32 is bonded to the intermediate transfer base material TM (see FIG. 22E). Finally, the bonding surface 311 of the inner edge portion 31E is bonded to the outer edge portion 32E of the second surface 322, and the intermediate transfer base material TM is removed from the mask portion 32. Thus, the vapor deposition mask 30 in a state in which the mask portion 32 is bonded to the frame portion 31 is manufactured (see FIG. 22F).

  In the method of manufacturing a display device using the vapor deposition mask 30 described above, first, the mask device 10 on which the vapor deposition mask 30 is mounted is mounted in the vacuum chamber of the vapor deposition apparatus. At this time, the mask device 10 is attached such that the deposition target such as a glass substrate and the first surface 321 face each other, and the deposition source and the second face 322 face each other. Then, the deposition target is carried into the vacuum chamber of the deposition apparatus, and the deposition material is sublimed by the deposition source. As a result, a pattern having a shape following the first opening H1 is formed on the deposition target facing the first opening H1. Note that the evaporation material is, for example, an organic light emitting material which constitutes a pixel of a display device or a pixel electrode which constitutes a pixel circuit of the display device.

[Example]
Each embodiment will be described with reference to FIGS. 23 to 29. FIG.
Example 1
First, a rolling process is performed on the base material 1a made of invar to form a metal plate, and then a slitting process of cutting the metal plate is performed so as to obtain a desired size in the width direction DW. Formed 1b. Then, the annealing process was performed to the rolling material 1b, and the base material 1 for vapor deposition masks of Example 1 whose length of width direction DW is 500 mm and whose thickness is 20 micrometers was obtained.

Next, as shown in FIG. 23, the measurement substrate 2M of Example 1 in which the length in the longitudinal direction DL is 700 mm was cut out from the deposition mask substrate 1 of Example 1. Subsequently, the steepness of the cut-out measurement base material 2M was measured over the entire width direction DW of the measurement base material 2M. Under the present circumstances, the conditions shown below were used as measurement conditions of steepness.
Measuring device: CNC image measuring system VMR-6555 manufactured by Nikon Corporation
Length in the longitudinal direction DL of the measurement range ZL: 500 mm
Length DL in the longitudinal direction of the non-measurement range ZE: 100 mm
Measurement interval of longitudinal direction DL: 1 mm
Measurement interval of width direction DW: 20 mm
The measurement results of the steepness in Example 1 are shown in FIG. 24 and Table 1. In addition, the steepness which Table 1 shows is the maximum value in center part RC and each edge part RE.

  As FIG. 24 shows, the maximum value of the steepness in the central part RC of Example 1 is 0.3% or less, and the maximum value of the steepness in each end RE is 0.6% or less. It was found that the above conditions 1 and 2 were satisfied. And in Example 1, the maximum value of the steepness in one side (end 1) of the both ends RE is 0.43%, and the maximum value of the steepness in the central part RC (0.28%) It was recognized that it was bigger than). On the other hand, it was found that the maximum value of the steepness at the other (end 2) of the both ends RE was 0.20%, which is smaller than the steepness at the central part RC. That is, it was found that the condition 3 was satisfied. The difference between the maximum values of the steepnesses at the two end portions RE was 0.23%.

Example 2
By setting the pressing force between the rolling rollers 51 and 52 higher than in Example 1 and setting the other conditions in the same manner as the conditions in Example 1, the length in the width direction DW is 500 mm, and the thickness The base material 1 for vapor deposition masks of Example 2 which is 15 micrometers was obtained. Next, as in Example 1, the measurement substrate 2M is cut out from the deposition mask substrate 1 of Example 2, and the steepness of the cut measurement substrate 2M is measured in the width direction DW of the measurement substrate 2M. Was measured throughout.
The measurement results of the steepness in Example 2 are shown in FIG. 25 and Table 1.

  As FIG. 25 shows, the maximum value of the steepness in the central part RC of Example 2 is 0.3% or less, and the maximum value of the steepness in each end RE is 0.6% or less. It was found that the above conditions 1 and 2 were satisfied. And in Example 2, the maximum value of the steepness in the both ends RE is 0.15% and 0.06%, and is larger than the maximum value (0.17%) of the steepness in the central part RC. It was recognized that the condition 3 was satisfied.

[Example 3]
By setting the pressing force between the rolling rollers 51 and 52 higher than in the first embodiment and making the distribution different from that in the second embodiment, and setting the other conditions in the same manner as the conditions of the first embodiment, the width direction DW A substrate for vapor deposition mask 1 of Example 3 having a length of 500 mm and a thickness of 15 μm was obtained. Next, as in Example 1, the measurement substrate 2M is cut out from the deposition mask substrate 1 of Example 3, and the steepness of the cut measurement substrate 2M is measured in the width direction DW of the measurement substrate 2M. Was measured throughout.
The measurement results of the steepness in Example 3 are shown in FIG. 26 and Table 1.

  As shown in FIG. 26, the maximum value of the steepness in the central part RC of Example 3 is 0.3% or less, and the maximum value of the steepness in each end RE is 0.6% or less. It was found that the above conditions 1 and 2 were satisfied. And in Example 3, the maximum value of the steepness in one side (end 1) of the both ends RE is 0.58%, and the maximum value of the steepness in the center RC (0.24% It was recognized that it was bigger than). On the other hand, it is recognized that the maximum value of the steepness at the other (end 2) of the two end portions RE is 0.21%, which is smaller than the maximum value of the steepness at the central portion RC The That is, it was found that the condition 3 was satisfied. The difference between the maximum values of the steepnesses at the two end portions RE was 0.37%.

Comparative Example 1
The pressing force between the rolling rollers 51 and 52 is higher than that of the first embodiment, and the rotational speed of the rolling rollers 51 and 52 is higher than that of the first embodiment, and the other conditions are set the same as the conditions of the first embodiment. By doing this, the substrate 1 for vapor deposition mask of Comparative Example 1 having a length of 500 mm in the width direction DW and a thickness of 20 μm was obtained. Next, as in Example 1, the measurement substrate 2M is cut out from the deposition mask substrate 1 of Comparative Example 1, and the creeping distance of the cut measurement substrate 2M is the width direction DW of the measurement substrate 2M. The steepness of the measurement base material 2M of Comparative Example 1 was obtained.
The measurement results of the steepness of Comparative Example 1 are shown in FIG. 27 and Table 1.

  As shown in FIG. 27, the maximum value of the steepness in the central portion RC of the comparative example 1 is 0.3% or less, and the maximum value of the steepness in each end RE is 0.6% or less. It was found that the above conditions 1 and 2 were satisfied. On the other hand, in Comparative Example 1, the maximum value of the steepness at both end portions RE is 0.21% and 0.36%, which is higher than the maximum value (0.08%) of the steepness at the central portion RC. It was also recognized that the condition 3 was not satisfied.

Comparative Example 2
By changing the distribution of the pressing force between the rolling rollers 51 and 52 from Comparative Example 1 and setting the other conditions in the same manner as the conditions of Comparative Example 1, the length in the width direction DW is 500 mm, and The substrate for vapor deposition mask 1 of Comparative Example 2 having a thickness of 20 μm was obtained. Next, as in Comparative Example 1, the measurement base 2M is cut out from the deposition mask base 1 of Comparative Example 2, and the steepness of the cut measurement base 2M is the width direction DW of the measurement base 2M. Was measured throughout.
The measurement results of the steepness of Comparative Example 2 are shown in FIG. 28 and Table 1.

  As shown in FIG. 28, the maximum value of the steepness at the central portion RC of Comparative Example 2 is significantly larger than 0.3%, and the maximum value of the steepness at each end RE is 0. It was found that the condition 1 was not satisfied while the condition 2 was satisfied. And in the comparative example 2, the maximum value of the steepness in the both ends RE is 0.59% and 0.58%, and is larger than the maximum value (0.63%) of the steepness in the center part RC. It was recognized that the condition 3 was satisfied.

Comparative Example 3
By changing the distribution of the pressing force between the rolling rollers 51 and 52 from Comparative Example 1 and setting the other conditions in the same manner as the conditions of Comparative Example 1, the length in the width direction DW is 500 mm, and The substrate for vapor deposition mask 1 of Comparative Example 3 having a thickness of 20 μm was obtained. Next, as in Comparative Example 1, the measurement base 2M is cut out from the deposition mask base 1 of Comparative Example 3, and the steepness of the cut measurement base 2M is the width direction DW of the measurement base 2M. Was measured throughout.
The measurement results of the steepness of Comparative Example 3 are shown in FIG. 29 and Table 1.

  As FIG. 29 shows, the maximum value of the steepness which central part RC of comparative example 3 has is 0.3% or less, and the maximum value of the steepness in one (end part 1) in both ends RE Was significantly larger than 0.6%, and the maximum value of the steepness at the other end (end 2) was found to be 0.6% or less. That is, it was found that the condition 2 was not satisfied while the condition 1 was satisfied. And it was recognized that the maximum value of the steepness in the both ends RE of comparative example 3 is 0.81% and 0.36%, and larger than the maximum value of the steepness in central part RC. That is, it was found that the condition 3 was not satisfied.

Pattern accuracy
The first DFR 2 with a thickness of 10 μm is attached to the first surface 1 Sa of the deposition mask substrate 1 using the deposition mask substrate 1 of each of Examples 1, 2, 3 and Comparative Examples 1, 2, 3 The Then, an exposure step of bringing an exposure mask into contact with the first DFR 2 and an exposure step was performed, and then a developing step was performed to form a plurality of through holes 2 a having a diameter of 30 μm in a grid shape in the first DFR 2. Subsequently, etching using the first DFR 2 as a mask was performed on the first surface 1Sa to form a plurality of holes 32H positioned in a lattice shape in the deposition mask substrate 1. And the opening diameter in width direction DW of substrate 1 for vapor deposition masks was measured about each hole 32H. Table 1 shows the variation of the opening diameter in the width direction DW of each hole 32H. In Table 1, among the opening diameters of the holes 32H, a circle is written at a level where the difference between the maximum opening diameter and the minimum opening diameter is 2.0 μm or less, and the maximum opening diameter is The crosses were written at a level where the difference between the value and the minimum value of the aperture diameter was greater than 2.0 μm.

  As Table 1 shows, in each Example 1, 2, 3, it was recognized that the dispersion | variation in an aperture diameter of all was 2.0 micrometers or less. On the other hand, in each of Comparative Examples 1, 2 and 3, it was found that the variation in the aperture diameter was larger than 2.0 μm.

  In the first comparative example, the maximum value of the steepness at each end RE is larger than the maximum value of the steepness at the central portion RC, and the condition 3 is not satisfied. Therefore, in the comparative example 1, although the conditions 1 and 2 are satisfied, since the stagnation is formed in the flow of the liquid, the variation in the opening diameter is larger than 2.0 μm.

  Further, in Comparative Example 2, while the maximum value of the steepness at each end RE is smaller than the maximum value of the steepness at the central part RC and the condition 3 is satisfied, the steepness at the central part RC is The maximum value of degree is much larger than 0.3%, and condition 1 is not satisfied. Therefore, although the conditions 2 and 3 are satisfied, the liquid in the center RC itself such as the valley of the wave in the center RC due to the height of the wave in the center RC being excessive. Stagnation, and the variation in the aperture diameter is larger than 2.0 μm.

  In Comparative Example 3, as in Comparative Example 1, the maximum value of the steepness at each end RE is larger than the maximum value of the steepness in the central part RC, and Condition 3 is not satisfied. Also, the maximum value of the steepness at one end RE is much larger than 0.6%, and the condition 2 is not satisfied. Therefore, although the condition 1 is satisfied in Comparative Example 3, the aperture diameter is caused by stagnation in the flow of the liquid, peeling of the resist layer, deviation of exposure to the resist layer, deviation of conveyance of the deposition mask substrate 1, and the like. Is larger than 2.0 μm.

  As a result, from the comparison between Examples 1, 2, 3 and Comparative Example 1, the maximum value of the steepness at least one of the end portions RE in the width direction DW is the central portion RC of the width direction DW. It has been recognized that the variation of the aperture diameter can be suppressed by being smaller than the maximum value of the steepness at, that is, by satisfying the condition 3. In other words, even if the substrate 1 for vapor deposition mask has a small maximum value of the steepness such that the conditions 1 and 2 are satisfied, in the configuration not satisfying the condition 3, the distribution of the steepness that exists not a little In other words, it was also recognized that variations in the aperture diameter occur due to stagnation of the flow of the liquid.

  Further, according to comparison between Examples 1, 2 and 3 and Comparative Examples 2 and 3, in order to obtain the above-mentioned effect by satisfying the condition 3, the maximum value of the steepness in the central portion RC is 0.3% It is recognized that the following is true, and the maximum value of the steepness at each end RE is 0.6% or less, that is, it is necessary to satisfy the conditions 1 and 2. In other words, even if the deposition mask substrate 1 has a distribution suitable for the maximum value of the steepness such that the condition 3 is satisfied, a wave having an excessive undulation in the configuration that does not satisfy the conditions 1 and 2 It has also been recognized that the opening diameter may vary due to the presence of.

According to the embodiment, the following effects can be obtained.
(1) It is possible to improve the accuracy concerning the shape of the hole and the size of the hole provided in the mask portion 32, and further to improve the accuracy of the pattern formed by vapor deposition. The method of exposing the resist is not limited to the method of bringing the exposure mask into contact with the resist, and the exposure may be such that the exposure mask is not brought into contact with the resist. In the case of a method in which the exposure mask is brought into contact with the resist, the deposition mask base is pressed against the surface of the exposure mask, so that it is possible to suppress a decrease in exposure accuracy caused by the wave shape provided in the deposition mask base. With any of the exposure methods, the accuracy in the process of processing the surface with liquid can be enhanced, and in turn, the accuracy of the pattern formed by vapor deposition can be enhanced.

  (2) About the result of development with a developing solution, and the result of washing with the cleaning fluid, the variation on the surface of substrate 1 for vapor deposition masks can be controlled. As a result, the uniformity of the shape and size of the first through holes 2a and the second through holes 3a formed through the exposure step and the development step can be enhanced in the surface of the deposition mask substrate 1 It becomes possible.

  (3) About the result of the etching by etching liquid, and the result of washing | cleaning of the etching liquid by the washing | cleaning liquid, the dispersion | variation in the surface of the base material 1 for vapor deposition masks can be suppressed. Moreover, the dispersion | variation in the surface of the base material 1 for vapor deposition masks can be suppressed about the result of peeling of the resist layer by peeling liquid, and the result of washing | cleaning of the peeling liquid by the washing | cleaning liquid. As a result, it is possible to improve the uniformity in the surface of the deposition mask substrate 1 with respect to the shape and size of the small holes 32SH and the shape and size of the large holes 32LH.

  (4) The number of holes 32H required for one frame portion 31 is, for example, carried by the three mask portions 32. That is, the total area of the mask portions 32 required for one frame portion 31 is divided into, for example, three mask portions 32. Therefore, even if a part of the mask portion 32 is deformed in one frame portion 31, it is not necessary to replace all the mask portions 32 of the one frame portion 31. Then, the size of the new mask portion 32 replaced with the deformed mask portion 32 may be reduced to about 1/3 as compared with the configuration in which one mask portion 32 is provided in one frame portion 31. It also becomes possible.

  (5) In the measurement of the steepness using the measurement base 2M, both ends of the measurement base 2M in the longitudinal direction DL are excluded from the measurement target of the steep as the non-measurement range ZE . Each non-measurement range ZE is a range having a possibility of having a wave shape different from that of the deposition mask substrate 1 by cutting the deposition mask substrate 1. Therefore, it is possible to increase the accuracy of the steepness in the measurement in which the non-measurement range ZE is excluded from the measurement target.

The above embodiment can be modified as follows.
[Method of producing base material for vapor deposition mask]
-In a rolling process, it is also possible to roll the base material 1a by several pairs of rolling rollers using the rolling mill provided with several pairs of rolling rollers. In the method using a plurality of pairs of rolling rollers, it is possible to increase the degree of freedom in terms of control parameters for satisfying the above conditions 1, 2 and 3.

In the annealing step, it is also possible to anneal the rolled rolling material 1b wound around the core C, instead of performing annealing while pulling the rolling material 1b in the longitudinal direction DL. In the method of annealing the roll-shaped rolling material 1b, the substrate for vapor deposition mask 1 may have a wrinkle of warpage corresponding to the diameter of the roll. Therefore, depending on the material of the deposition mask substrate 1 and the size of the roll diameter when wound around the core C, it is preferable to anneal while pulling the rolling material 1b.
-It is also possible to manufacture the base material 1 for vapor deposition masks by repeating a rolling process and an annealing process alternately a plurality of times.

  -The base material 1 for vapor deposition masks by electrolysis and the base material 1 for vapor deposition masks by rolling may be further processed to be thinner by chemical polishing or electric polishing. At this time, it is also possible to set conditions such as the composition of the polishing liquid and the method of supplying it so that the above conditions 1, 2 and 3 are satisfied including the polishing step.

[Center RC and end RE]
The length of the central portion RC in the width direction DW is preferably 40% of the length of the deposition mask substrate 1 in the width direction DW. However, the length in the width direction DW of the central portion RC may be, for example, 20% or more and 60% or less of the length in the width direction DW of the deposition mask substrate 1.

  The length in the width direction DW of the end portion RE is preferably 30% of the length in the width direction DW of the deposition mask base material 1. However, the length in the width direction DW of the end portion RE can be, for example, 20% or more and 40% or less of the length in the width direction DW of the deposition mask base material 1. It is also possible to have different lengths from one end RE to the other end RE.

  C: core, F: stress, S: deposition target, V: space, W: dimension, CP: clamp, DL: longitudinal direction, DW: width direction, EP: electrode, H1: first opening, H2: second opening , PC: center, PR: resist layer, RC: central portion, RE: end portion, RM: resist mask, SH: step height, SP: support, TM: intermediate transfer base material, ZE: non-measurement range, ZL: Measurement range, EPS: electrode surface, 1: substrate for deposition mask, 1a: base material, 1b: rolling material, 1Sa, 321: first surface, 1Sb, 322: second surface, 2: substrate for measurement, 2a ... 1st through hole, 2S ... surface, 3a ... 2nd through hole, 4 ... 1st protective layer, 10 ... mask device, 20 ... main frame, 21 ... main frame hole, 30 ... vapor deposition mask, 31 ... frame portion, 31E ... inner edge portion 32, 32A, 32B, 32C ... mask portion, 3 BN: Junction, 32E: Outer edge, 32H: Hole, 32K: Base material, 32LH: Large hole, 32SH: Small hole, 33, 33A, 33B, 33C: Frame hole, 50: Rolling device, 51, 52: Rolling Roller 53 annealing device 61 second protective layer 311 bonding surface 312 non bonding surface 323 mask plate

Claims (7)

A substrate for a deposition mask, which is a strip-shaped metal plate, in which a plurality of holes are formed by etching and used for manufacturing the deposition mask,
The shapes along the longitudinal direction of the metal plate at respective positions in the width direction of the metal plate are different from each other, and each shape has waves repeating in the longitudinal direction of the metal plate,
The length of the straight line connecting one valley to the other valley in the wave is the wave length,
The percentage of the wave height to the wave length is the unit steepness,
At each position in the width direction of the metal plate, the average value of the unit steepnesses of all the waves included in the longitudinal direction is the steepness,
The maximum value of the steepness at the central portion in the width direction of the metal plate is 0.3% or less,
The maximum value of the steepness at each end in the width direction of the metal plate is 0.6% or less,
The maximum value of the steepness of at least one of both end portions in the width direction of the metal plate is smaller than the maximum value of the steepness in the central portion of the metal plate in the width direction,
Substrate for deposition mask. The maximum value of the steepness at one of the end portions is smaller than the maximum value of the steepness at the central portion,
The maximum value of the steepness at the other end is greater than the maximum value of the steepness at the central part,
The vapor deposition according to claim 1, wherein the difference between the maximum value of the steepness at one end and the maximum value of the steepness at the other end is 0.2% or more and 0.4% or less. Mask substrate. The maximum value of the steepness at one of the ends and the maximum value of the steepness at the other of the ends are smaller than the maximum value of the steepness at the central part,
The base material for a deposition mask according to claim 1, wherein the maximum value of the steepness at the both end portions and the maximum value of the steepness at the central portion are 0.2% or less. A manufacturing method of a substrate for a deposition mask, which is a strip-shaped metal plate, in which a plurality of holes are formed by etching and used for producing a deposition mask,
Rolling the base material to obtain the metal plate,
The shapes along the longitudinal direction of the metal plate at respective positions in the width direction of the metal plate are different from each other, and each shape has waves repeating in the longitudinal direction of the metal plate,
The length of the straight line connecting one valley to the other valley in the wave is the wave length,
The percentage of the wave height to the wave length is the unit steepness,
At each position in the width direction of the metal plate, the average value of the unit steepnesses of all the waves included in the longitudinal direction is the steepness,
In obtaining the metal plate,
The maximum value of the steepness at the central portion in the width direction of the metal plate is 0.3% or less,
The maximum value of the steepness at each end in the width direction of the metal plate is 0.6% or less,
The base material is set so that the maximum value of the steepness at at least one of both end portions in the width direction of the metal plate is smaller than the maximum value of the steepness at the central portion in the width direction of the metal plate. Roll,
The manufacturing method of the base material for vapor deposition masks. Forming a resist layer on a strip-shaped metal plate;
Forming a plurality of holes in the metal plate by etching using the resist layer as a mask to form a mask portion;
The shapes along the longitudinal direction of the metal plate at respective positions in the width direction of the metal plate are different from each other, and each shape has waves repeating in the longitudinal direction of the metal plate,
The length of the straight line connecting one valley to the other valley in the wave is the wave length,
The percentage of the wave height to the wave length is the unit steepness,
At each position in the width direction of the metal plate, the average value of the unit steepnesses of all the waves included in the longitudinal direction is the steepness,
The maximum value of the steepness at the central portion in the width direction of the metal plate is 0.3% or less,
The maximum value of the steepness at each end in the width direction of the metal plate is 0.6% or less,
The maximum value of the steepness of at least one of both end portions in the width direction of the metal plate is smaller than the maximum value of the steepness in the central portion of the metal plate in the width direction,
Method of manufacturing a deposition mask. Forming the mask portion is forming a plurality of the mask portions on a single metal plate;
Each said mask part is separately provided with one side with the said several holes,
6. The method according to claim 5, further comprising: joining the side surface of each of the mask portions and the one frame portion to one another such that the one frame portion encloses the plurality of holes for each of the mask portions. Method of vapor deposition mask. Providing a deposition mask according to the deposition mask manufacturing method according to claim 5 or 6;
Forming a pattern by vapor deposition using the vapor deposition mask.

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