CN104838037A - Metal plate, metal plate production method, and method for producing vapor deposition mask using metal plate - Google Patents
Metal plate, metal plate production method, and method for producing vapor deposition mask using metal plate Download PDFInfo
- Publication number
- CN104838037A CN104838037A CN201480003438.3A CN201480003438A CN104838037A CN 104838037 A CN104838037 A CN 104838037A CN 201480003438 A CN201480003438 A CN 201480003438A CN 104838037 A CN104838037 A CN 104838037A
- Authority
- CN
- China
- Prior art keywords
- metal sheet
- sample
- deposition mask
- etching
- manufacture method
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000002184 metal Substances 0.000 title claims abstract description 292
- 229910052751 metal Inorganic materials 0.000 title claims abstract description 292
- 238000004519 manufacturing process Methods 0.000 title claims description 74
- 238000007740 vapor deposition Methods 0.000 title abstract description 4
- 238000005530 etching Methods 0.000 claims abstract description 120
- 238000000137 annealing Methods 0.000 claims abstract description 25
- 230000008021 deposition Effects 0.000 claims description 272
- 238000000034 method Methods 0.000 claims description 81
- 239000000758 substrate Substances 0.000 claims description 63
- 239000000463 material Substances 0.000 claims description 55
- 239000011148 porous material Substances 0.000 claims description 35
- 238000005096 rolling process Methods 0.000 claims description 28
- 230000015572 biosynthetic process Effects 0.000 claims description 23
- 239000000956 alloy Substances 0.000 claims description 11
- 229910001374 Invar Inorganic materials 0.000 claims description 10
- 230000002093 peripheral effect Effects 0.000 claims description 9
- 230000008020 evaporation Effects 0.000 description 36
- 238000001704 evaporation Methods 0.000 description 36
- 239000011521 glass Substances 0.000 description 21
- 239000011368 organic material Substances 0.000 description 10
- 238000000576 coating method Methods 0.000 description 9
- 239000011248 coating agent Substances 0.000 description 8
- 230000000694 effects Effects 0.000 description 7
- 230000003628 erosive effect Effects 0.000 description 7
- 239000011347 resin Substances 0.000 description 7
- 229920005989 resin Polymers 0.000 description 7
- 238000005520 cutting process Methods 0.000 description 6
- XEEYBQQBJWHFJM-UHFFFAOYSA-N Iron Chemical compound [Fe] XEEYBQQBJWHFJM-UHFFFAOYSA-N 0.000 description 4
- 239000000654 additive Substances 0.000 description 4
- 230000000996 additive effect Effects 0.000 description 4
- 238000011156 evaluation Methods 0.000 description 4
- 238000005259 measurement Methods 0.000 description 4
- 238000012216 screening Methods 0.000 description 4
- 206010034972 Photosensitivity reaction Diseases 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000007689 inspection Methods 0.000 description 3
- 230000036211 photosensitivity Effects 0.000 description 3
- 238000012546 transfer Methods 0.000 description 3
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- 239000003513 alkali Substances 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 230000003292 diminished effect Effects 0.000 description 2
- 230000002349 favourable effect Effects 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 229910052742 iron Inorganic materials 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 230000000704 physical effect Effects 0.000 description 2
- 239000004925 Acrylic resin Substances 0.000 description 1
- 229920000178 Acrylic resin Polymers 0.000 description 1
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 description 1
- 229910045601 alloy Inorganic materials 0.000 description 1
- 238000004364 calculation method Methods 0.000 description 1
- 230000000052 comparative effect Effects 0.000 description 1
- 235000009508 confectionery Nutrition 0.000 description 1
- 230000002950 deficient Effects 0.000 description 1
- 238000004821 distillation Methods 0.000 description 1
- 230000008030 elimination Effects 0.000 description 1
- 238000003379 elimination reaction Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000002309 gasification Methods 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 230000001771 impaired effect Effects 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- SZVJSHCCFOBDDC-UHFFFAOYSA-N iron(II,III) oxide Inorganic materials O=[Fe]O[Fe]O[Fe]=O SZVJSHCCFOBDDC-UHFFFAOYSA-N 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000000465 moulding Methods 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000000059 patterning Methods 0.000 description 1
- 230000004043 responsiveness Effects 0.000 description 1
- 230000000717 retained effect Effects 0.000 description 1
- 210000002027 skeletal muscle Anatomy 0.000 description 1
- 239000007921 spray Substances 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/22—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material characterised by the process of coating
- C23C14/56—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks
- C23C14/562—Apparatus specially adapted for continuous coating; Arrangements for maintaining the vacuum, e.g. vacuum locks for coating elongated substrates
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B21—MECHANICAL METAL-WORKING WITHOUT ESSENTIALLY REMOVING MATERIAL; PUNCHING METAL
- B21B—ROLLING OF METAL
- B21B1/00—Metal-rolling methods or mills for making semi-finished products of solid or profiled cross-section; Sequence of operations in milling trains; Layout of rolling-mill plant, e.g. grouping of stands; Succession of passes or of sectional pass alternations
- B21B1/22—Metal-rolling methods or mills for making semi-finished products of solid or profiled cross-section; Sequence of operations in milling trains; Layout of rolling-mill plant, e.g. grouping of stands; Succession of passes or of sectional pass alternations for rolling plates, strips, bands or sheets of indefinite length
-
- C—CHEMISTRY; METALLURGY
- C21—METALLURGY OF IRON
- C21D—MODIFYING THE PHYSICAL STRUCTURE OF FERROUS METALS; GENERAL DEVICES FOR HEAT TREATMENT OF FERROUS OR NON-FERROUS METALS OR ALLOYS; MAKING METAL MALLEABLE, e.g. BY DECARBURISATION OR TEMPERING
- C21D1/00—General methods or devices for heat treatment, e.g. annealing, hardening, quenching or tempering
- C21D1/26—Methods of annealing
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/04—Coating on selected surface areas, e.g. using masks
- C23C14/042—Coating on selected surface areas, e.g. using masks using masks
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C14/00—Coating by vacuum evaporation, by sputtering or by ion implantation of the coating forming material
- C23C14/58—After-treatment
- C23C14/5806—Thermal treatment
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/02—Local etching
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/02—Local etching
- C23F1/04—Chemical milling
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/10—Etching compositions
- C23F1/14—Aqueous compositions
- C23F1/16—Acidic compositions
- C23F1/28—Acidic compositions for etching iron group metals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/16—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering
- H10K71/166—Deposition of organic active material using physical vapour deposition [PVD], e.g. vacuum deposition or sputtering using selective deposition, e.g. using a mask
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/40—Thermal treatment, e.g. annealing in the presence of a solvent vapour
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Organic Chemistry (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Thermal Sciences (AREA)
- General Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Electroluminescent Light Sources (AREA)
- Physical Vapour Deposition (AREA)
Abstract
The purpose of the present invention is to provide a metal plate whereby a vapor deposition mask having little curvature can be produced. If a sample taken from the metal plate after the annealing step is etched, the curvature of the sample after etching is no more than 0.008 mm<-1>.
Description
Technical field
The present invention relates to by forming more than 2 communicating poress and for the manufacture of the metal sheet of deposition mask.The invention still further relates to the manufacture method of metal sheet.In addition, the invention still further relates to the manufacture of use metal sheet for carrying out the method for the deposition mask of evaporation with desired pattern.
Background technology
In recent years, for the display unit used in the portable device such as smart mobile phone and panel computer, require that fine, such as picture element density are more than 300ppi.In addition, in portable device, needing on correspondence is full HD improves, and in this case, the picture element density of display unit requires as such as more than 450ppi.
Because responsiveness is good, power consumption is low, organic EL display is attracted attention.As the pixel formation method of organic EL display, known method is, uses the deposition mask comprised with the communicating pores of desired pattern arrangement, forms pixel with desired pattern.Specifically, first, make deposition mask be sealed at the substrate of organic EL display, then, closely sealed deposition mask and substrate are together dropped into evaporation coating device, carry out the evaporation of organic materials etc.Deposition mask generally following manufacture obtains: form communicating pores on a metal plate by make use of the etching of photolithographic techniques, thus manufactures above-mentioned evaporation mask (such as patent documentation 1).
Prior art document
Patent documentation
Patent documentation 1: Japanese Unexamined Patent Publication 2004-39319 publication
Summary of the invention
When using deposition mask to carry out the film forming of deposition material on substrate, not only substrate, deposition mask is also attached with deposition material.Such as, also there is the direction that significantly tilts along the normal direction relative to deposition mask and fly to the deposition material of substrate in deposition material, such deposition material can arrive the wall of the communicating pores of deposition mask thus attachment before arriving substrate.In this case, can think, deposition material is difficult to the region being positioned at the near wall of the communicating pores of deposition mask adhered in a substrate, its result, and other parts of the Thickness Ratio of the deposition material of attachment are little or produce the part of not adhering to deposition material.That is, can think, the evaporation of the near wall of the communicating pores of deposition mask is unstable.Therefore, when using deposition mask in the pixel in order to form organic EL display, the dimensional precision of pixel and positional precision reduce, and its result, causes the luminous efficiency of organic EL display to reduce.
In order to solve such problem, consider the reduced thickness of the metal sheet for the manufacture of deposition mask.This is because, by reducing the thickness of metal sheet, the wall face height of the communicating pores of deposition mask can be made to diminish, thus, the ratio being attached to the deposition material on communicating pores wall in deposition material can be reduced.But, in order to obtain the little metal sheet of thickness, need when rolling mother metal manufactures metal sheet to strengthen rolling rate.At this, rolling rate refers to the value that utilization (thickness-metal sheet of mother metal)/(thickness of mother metal) calculates.Under implementing the heat treated situations such as annealing after rolling, usual rolling rate is larger, and the stress and the unrelieved stress that residue in metal sheet are also larger.If unrelieved stress is large, then when forming communicating pores on a metal plate by etching, the side of the enforcement etching in metal sheet, unrelieved stress is eliminated, its result, the deposition mask generation warpage obtained.When warpage is large, deposition mask can not be made fully to be sealed at the substrate of organic EL display, its result, the dimensional precision of the pixel of the organic EL display obtained and positional precision reduce.
The object of this invention is to provide a kind of manufacture method that effectively can solve the metal sheet of such problem, the manufacture method of metal sheet and deposition mask.
1st manufacture method that the present invention relates to a kind of metal sheet, this metal sheet is by formation more than 2 communicating poress and for the manufacture of deposition mask, wherein, the above-mentioned communicating pores of above-mentioned deposition mask is formed by etching above-mentioned metal sheet, the manufacture method of above-mentioned metal sheet possesses following operation: rolling process, is rolled to obtain having thickness t to mother metal
0above-mentioned metal sheet; And annealing operation, by above-mentioned metal sheet annealing with the internal stress removing above-mentioned metal sheet, above-mentioned metal sheet has the 1st and the 2nd, 1st and the 2nd orthogonal relative to the thickness direction of above-mentioned metal sheet and each other in opposite directions, when having carried out the sample obtained from the above-mentioned metal sheet after above-mentioned annealing operation etching, the curvature k of the warpage of the sample after etching has been 0.008mm
-1below, above-mentioned curvature k is following values: first, the above-mentioned sample of long 170mm, wide 30mm is obtained from the above-mentioned metal sheet after above-mentioned annealing operation, then, the two ends except length direction in above-mentioned sample are risen the long 150mm except the region within 10mm, wide 30mm region as by etching area, from above-mentioned 1st side being etched described sample by the whole region of etching area at above-mentioned sample, until the described thickness by etching area reaches 1/3 × t
0above and 2/3 × t
0in following scope, thereafter, above-mentioned sample after etching is placed in predetermined mounting table according to the mode that its side is level, then, what measure above-mentioned sample is above-mentioned by above-mentioned by the degree of depth y of the warpage of etching area (mm) from x (mm) and above-mentioned sample of the tip spacing of the length direction of etching area, thereafter, above-mentioned tip spacing is substituted into following formula from x and above-mentioned degree of depth y, obtain described curvature k thus
k＝1/ρ、ρ＝(y/2)+(x
2/8y)。
In the manufacture method based on metal sheet of the present invention, above-mentioned annealing operation while length direction stretches above-mentioned metal sheet, can be implemented.
In the manufacture method based on metal sheet of the present invention, above-mentioned annealing operation is implemented can be taken at the state on core at above-mentioned metal plate coils under.
In the manufacture method based on metal sheet of the present invention, the thermal expansivity of preferred above-mentioned mother metal is the value equal with the thermal expansivity of substrate, and on this substrate, across the deposition mask manufactured by above-mentioned metal sheet, film forming has deposition material.
In the manufacture method based on metal sheet of the present invention, above-mentioned metal sheet can contain Invar alloy material.
The present invention of 2nd relates to a kind of metal sheet, and this metal sheet is by forming more than 2 communicating poress and for the manufacture of the metal sheet of deposition mask, wherein, above-mentioned metal sheet has thickness t
0further, above-mentioned metal sheet has the 1st and the 2nd, the 1st and the 2nd orthogonal relative to the thickness direction of above-mentioned metal sheet and each other in opposite directions, when having carried out the sample obtained from above-mentioned metal sheet etching, the curvature k of the warpage of the sample after etching has been 0.008mm
-1below, above-mentioned curvature k is following values: first, the above-mentioned sample of long 170mm, wide 30mm is obtained from above-mentioned metal sheet, then, the two ends except length direction in above-mentioned sample are risen the long 150mm except the region within 10mm, wide 30mm region as by etching area, from above-mentioned 1st side being etched above-mentioned sample by the whole region of etching area at above-mentioned sample, until the described thickness by etching area reaches 1/3 × t
0above and 2/3 × t
0in following scope, thereafter, above-mentioned sample after etching is placed in predetermined mounting table according to the mode that its side is level, then, what measure above-mentioned sample is above-mentioned by above-mentioned by the degree of depth y of the warpage of etching area (mm) from x (mm) and above-mentioned sample of the tip spacing of the length direction of etching area, thereafter, above-mentioned tip spacing is substituted into following formula from x and above-mentioned degree of depth y, obtain above-mentioned curvature k thus
k＝1/ρ、ρ＝(y/2)+(x
2/8y)。
Thermal expansivity based on metal sheet of the present invention is preferably the value equal with the thermal expansivity of substrate, and on this substrate, across the deposition mask manufactured by above-mentioned metal sheet, film forming has deposition material.
Invar alloy material can be contained based on metal sheet of the present invention.
The present invention of 3rd relates to a kind of manufacture method of deposition mask, this deposition mask possesses the peripheral region of the effective area being formed with more than 2 communicating poress and the surrounding being positioned at above-mentioned effective area, wherein, this manufacture method comprises following operation: the operation preparing metal sheet, this metal sheet has thickness t
0, there is the 1st and the 2nd, the 1st and the 2nd orthogonal relative to the thickness direction of above-mentioned metal sheet and each other in opposite directions; With recess formation process, in this operation, engrave from above-mentioned 1st lateral erosion and state metal sheet, the recess for marking above-mentioned communicating pores is formed from the 1st side in the region of the above-mentioned metal sheet for the formation of above-mentioned effective area, when having carried out the sample obtained from above-mentioned metal sheet etching, the curvature k of the warpage of the sample after etching has been 0.008mm
-1below, above-mentioned curvature k is following values: first, the above-mentioned sample of long 170mm, wide 30mm is obtained from above-mentioned metal sheet, then, the two ends except length direction in above-mentioned sample are risen the long 150mm except the region within 10mm, wide 30mm region as by etching area, from above-mentioned 1st side being etched above-mentioned sample by the whole region of etching area at above-mentioned sample, until the described thickness by etching area reaches 1/3 × t
0above and 2/3 × t
0in following scope, thereafter, above-mentioned sample after etching is placed in predetermined mounting table according to the mode that its side is level, then, what measure above-mentioned sample is above-mentioned by above-mentioned by the degree of depth y of the warpage of etching area (mm) from x (mm) and above-mentioned sample of the tip spacing of the length direction of etching area, thereafter, above-mentioned tip spacing is substituted into following formula from x and above-mentioned degree of depth y, obtain above-mentioned curvature k thus
k＝1/ρ、ρ＝(y/2)+(x
2/8y)。
In the recess formation process of the manufacture method based on deposition mask of the present invention, can etch above-mentioned metal sheet from above-mentioned 1st side in the whole region of above-mentioned 1st.
In the above-mentioned recess formation process of the manufacture method based on deposition mask of the present invention, can etch above-mentioned metal sheet, until etched thickness reaches 1/3 × t from above-mentioned 1st side in the whole region of above-mentioned 1st
0above and 2/3 × t
0in following scope.
In the manufacture method based on deposition mask of the present invention, the thermal expansivity preferably stating metal sheet is the value equal with the thermal expansivity of substrate, and on this substrate, across the deposition mask manufactured by above-mentioned metal sheet, film forming has deposition material.
In the manufacture method based on deposition mask of the present invention, above-mentioned metal sheet can contain Invar alloy material.
According to the present invention, the deposition mask that warpage is little can be obtained.Therefore can to the abundant closely sealed deposition mask of substrate, its result, can improve dimensional precision and the positional precision of the deposition material be attached on substrate.
Accompanying drawing explanation
Fig. 1 is the figure for illustration of one embodiment of the present invention, for illustrating the schematic perspective view of an example of the deposition mask device comprising deposition mask.
Fig. 2 is for for illustration of the figure utilizing the deposition mask device shown in Fig. 1 to carry out the method for evaporation.
Fig. 3 is for illustrating the top partial view diagram of the deposition mask shown in Fig. 1.
Fig. 4 is the sectional view of the IV-IV line along Fig. 3.
Fig. 5 is the sectional view of the V-V line along Fig. 3.
Fig. 6 is the sectional view of the VI-VI line along Fig. 3.
Fig. 7 (a) obtains the figure of the operation of the metal sheet with desired thickness by rolling mother metal for illustrating, Fig. 7 (b) is for illustrating the figure to the operation that the metal sheet obtained by rolling is annealed.
Fig. 8 (a) is for illustrating the figure of the sample cut out from the metal sheet utilizing the operation shown in Fig. 7 (a), (b) to obtain, and Fig. 8 (b) is for illustrating the figure of the etched sample obtained by etching the 1st face of the sample shown in Fig. 8 (a).
Fig. 9 (a), (b) are for illustrating that the etched sample shown in Fig. 8 (b) is by the stereographic map of appearance that is placed in mounting table and vertical view.
Figure 10 is for carrying out the schematic diagram of overall description for an example of the manufacture method to the deposition mask shown in Fig. 1.
Figure 11 is the figure of an example of manufacture method for illustration of deposition mask, is the figure of long metal sheet shown in the cross section along normal direction.
Figure 12 is the figure of an example of manufacture method for illustration of deposition mask, is the figure of long metal sheet shown in the cross section along normal direction.
Figure 13 is the figure of an example of manufacture method for illustration of deposition mask, is the figure of long metal sheet shown in the cross section along normal direction.
Figure 14 is the figure of an example of manufacture method for illustration of deposition mask, is the figure of long metal sheet shown in the cross section along normal direction.
Figure 15 is the figure of an example of manufacture method for illustration of deposition mask, is the figure of long metal sheet shown in the cross section along normal direction.
Figure 16 is the figure of an example of manufacture method for illustration of deposition mask, is the figure of long metal sheet shown in the cross section along normal direction.
Figure 17 is the figure of an example of manufacture method for illustration of deposition mask, is the figure of long metal sheet shown in the cross section along normal direction.
Figure 18 is the figure of the variation for illustration of deposition mask and deposition mask device.
Figure 19 (a) ~ (c) is the figure for illustration of the method obtaining sample in embodiment from metal sheet.
Embodiment
Referring to accompanying drawing, one embodiment of the present invention is described.It should be noted that, in accompanying drawing appended in this specification sheets, for the ease of diagram and easy to understand, for the scale of material object and the size ratio etc. of length and width, suitably the size ratio etc. of comparative example chi and length and width changes and exaggerates.
Fig. 1 ~ Figure 17 is for illustration of the figure based on one embodiment of the present invention.In following embodiment and variation thereof, be described for the manufacture method of deposition mask, this deposition mask for manufacture organic EL display time by organic materials with desired pattern patterning on substrate.But, be not limited to such application, for the manufacture method of the deposition mask for various uses, all applicable the present invention.
It should be noted that, in this specification sheets, the term of " plate ", " sheet ", " film " is not only just can mutually distinguish based on the difference in address.Such as, " plate " is also comprise the concept that can be described as sheet or the such parts of film, and therefore, such as " metal sheet " and the parts being called " tinsel " or " metallic membrane " are only not the samely can not distinguishing of calling.
In addition, " plate face (unilateral, face) " refers to when parts as the tabular (sheet, membranaceous) of object of overall or gross examination of skeletal muscle, as the face consistent with in-plane of the plate-shaped member (sheet component, film member) of object.In addition, the normal direction used for the parts of tabular (sheet, membranaceous) refers to the normal direction in the plate face (unilateral, face) relative to these parts.
In addition, about what use in this specification sheets, with physical property and their degree, the value etc. of the specific such as term such as " parallel ", " orthogonal ", " identical ", " on an equal basis " and length, angle and physical property is carried out to shape or geometric condition, be not limited to strict implication, but the scope comprising the degree can expecting said function makes an explanation.
(deposition mask device)
First, about an example of the deposition mask device of the deposition mask comprised as manufacture method object, main reference Fig. 1 ~ Fig. 6 is described.Herein, Fig. 1 is the stereographic map of the example that the deposition mask device comprising deposition mask is shown, Fig. 2 is the figure of the using method for illustration of the deposition mask device shown in Fig. 1.Fig. 3 is the vertical view that deposition mask is shown from the 1st side, and Fig. 4 ~ Fig. 6 is the sectional view of each position of Fig. 3.
Deposition mask device 10 shown in Fig. 1 and Fig. 2 possesses the framework 15 of the deposition mask 20 be made up of rectangular metal plate 21 and the periphery being installed on deposition mask 20.Deposition mask 20 is provided with a large amount of communicating poress 25, and this large amount of communicating pores 25 at least etches from the 1st 21a the metal sheet 21 with the 1st 21a and the 2nd 21b in opposite directions each other and formed.As shown in Figure 2, this deposition mask device 10 is supported in evaporation coating device 90, for carrying out the evaporation of deposition material to substrate as the mode below the substrate such as glass substrate 92 of evaporation object faced by deposition mask 20.
In evaporation coating device 90, utilize the magnetic force from not shown magnetite, deposition mask 20 is closely sealed with glass substrate 92.In evaporation coating device 90, in the below of deposition mask device 10, be configured with and hold deposition material (as an example for the luminous organic material) crucible 94 of 98 and the well heater 96 of heating crucible 94.Deposition material 98 in crucible 94 generating gasification or distillation and be attached to the surface of glass substrate 92 under the heating from well heater 96.As mentioned above, be formed with a large amount of communicating poress 25 in deposition mask 20, deposition material 98 is attached to glass substrate 92 by this communicating pores 25.Its result, the pattern desired by corresponding according to the position of the communicating pores 25 with deposition mask 20, deposition material 98 film forming is in the surface of glass substrate 92.
(deposition mask)
The following detailed description of deposition mask 20.As shown in Figure 1, in present embodiment, deposition mask 20 is made up of metal sheet 21, has roughly quadrangle form in vertical view, precisely has substantially rectangular profile in a top view further.The metal sheet 21 of deposition mask 20 comprises the regularly arranged effective area 22 being formed with communicating pores 25 and surrounds the peripheral region 23 of effective area 22.Peripheral region 23 is the region for supporting effective area 22, and it is not intended to the region that evaporation passes through to the deposition material on substrate.Such as, in the deposition mask 20 used in the evaporation of the luminous organic material of organic EL display, effective area 22 is the regions in the deposition mask 20 right with the area surface forming pixel for the evaporation by luminous organic material on substrate (glass substrate 92), is namely the region in the deposition mask 20 right with the area surface of the display surface for the formation of made organic EL display substrate on substrate.But, based on various object, also communicating pores or recess can be formed in region 23 around.In example shown in Fig. 1, each effective area 22 has roughly quadrangle form in a top view, precisely has substantially rectangular profile in a top view further.
In the example in the figures, the effective area 22 of more than 2 along and the parallel direction of deposition mask 20 configure across predetermined interval, simultaneously along and the orthogonal other direction in an above-mentioned direction configure across predetermined interval.In illustrated example, an effective area 22 corresponds to an organic EL display.That is, the deposition mask device 10 (deposition mask 20) according to Fig. 1, can repeat evaporation (multiaspect is paid and steamed) piecemeal.
As shown in Figure 3, in the example in the figures, more than 2 communicating poress 25 formed in each effective area 22 arrange at predetermined intervals respectively along mutually orthogonal two directions in this effective area 22.About an example of the communicating pores 25 that this metal sheet 21 is formed, main reference Fig. 3 ~ Fig. 6 is described in detail further.
As shown in Fig. 4 ~ Fig. 6, more than 2 communicating poress 25 extend and through deposition mask 20 between the 1st 20a and the 2nd 20b, described 1st 20a is the side along normal direction of deposition mask 20, and described 2nd 20b is the opposite side along normal direction of deposition mask 20.In illustrated example, as below describe in detail, the 1st recess 30 is formed by being etched in metal sheet 21 from the 1st 21a side of the metal sheet 21 of the side of the normal direction as deposition mask, form the 2nd recess 35 from the 2nd 21b side of the opposite side of the normal direction as metal sheet 21 at metal sheet 21, utilize the 1st recess 30 and the 2nd recess 35 to form communicating pores 25.
As shown in Fig. 3 ~ Fig. 6, from the 1st 20a side direction the 2nd 20b side of deposition mask 20, in the position along normal direction of deposition mask 20, the sectional area of each 1st recess 30 in the cross section in the plate face along deposition mask 20 diminishes gradually.As shown in Figure 3, the wall 31 of the 1st recess 30 extends in the direction that the normal direction with deposition mask 20 is intersected in its whole region, and the side towards the normal direction along deposition mask 20 is exposed.Similarly, in the position along normal direction of deposition mask 20, the sectional area of each 2nd recess 35 in the cross section in the plate face along deposition mask 20 can diminish gradually from the 2nd of a deposition mask 20 20b side direction the 1st 20a side.The wall 36 of the 2nd recess 35 extends in the direction that the normal direction with deposition mask 20 is intersected in its whole region, and the opposite side towards the normal direction along deposition mask 20 exposes.
It should be noted that, as shown in Fig. 4 ~ Fig. 6, the wall 31 of the 1st recess 30 is connected by the connection section 41 of all shapes with the wall 36 of the 2nd recess 35.Connection section 41 is marked by the crest line of the protuberance that the wall 31 of the 1st recess 30 tilted relative to the normal direction of deposition mask merges into the wall 36 of the 2nd recess 35 tilted relative to the normal direction of deposition mask.Further, connection section 41 marks the minimum breakthrough part 42 of the area of communicating pores 25 in the vertical view of deposition mask 20.
As shown in Fig. 4 ~ Fig. 6, on the 2nd 20b in the face of the opposite side along normal direction of deposition mask, i.e. deposition mask 20, two adjacent communicating poress 25 are spaced from each other along the plate face of deposition mask.That is, as manufacture method described later, when this metal sheet 21 being etched from the 2nd 21b side of the 2nd metal sheet that 20b is corresponding 21 with deposition mask 20 and make the 2nd recess 35, remaining the 2nd 21b having metal sheet 21 between adjacent two the 2nd recesses 35.
On the other hand, as shown in Fig. 4 ~ Fig. 6, in the 1st 20a side of the side along normal direction of deposition mask, i.e. deposition mask 20, two adjacent the 1st recesses 30 connect.Namely, as manufacture method described later, when this metal sheet 21 being etched from the 1st 21a side of the 1st metal sheet that 20a is corresponding 21 with deposition mask 20 and form the 1st recess 30, remainingly can not there is the 1st 21a of metal sheet 21 between adjacent two the 1st recesses 30.That is, the 1st 21a of metal sheet 21 is etched in the whole region of effective area 22.Utilize the 1st 20a of the deposition mask 20 formed by the 1st such recess 30, when according to deposition mask 20 as shown in Figure 2 the 1st 20a in the face of the mode of deposition material 98 use this deposition mask 20, effectively can improve the utilising efficiency of deposition material 98.
As shown in Figure 2, when deposition mask device 10 is contained in evaporation coating device 90, as shown in two dot chain line in Fig. 4, the 1st 20a of deposition mask 20 is positioned at crucible 94 side maintaining deposition material 98, and the 2nd 20b of deposition mask 20 is in the face of glass substrate 92.Therefore, the 1st recess 30 that diminished gradually by sectional area of deposition material 98 and being attached on glass substrate 92.As shown by the arrows in Figure 4, deposition material 98 not only moves along the normal direction of glass substrate 92 from crucible 94 to glass substrate 92, and sometimes moves in the direction relative to the larger inclination of the normal direction of glass substrate 92.Now, when the thickness of deposition mask 20 is large, the deposition material 98 of inclination movement much can arrive the wall 31 of the 1st recess 30 and adhere to before arriving glass substrate 92 by communicating pores 25.In addition, on glass substrate 92 with in the region faced by communicating pores 25, can produce deposition material 98 be easy to arrive region and be difficult to arrive part.Therefore, save expensive deposition material to improve the utilising efficiency (film forming efficiency: be attached to the ratio on glass substrate 92) of deposition material and the film forming that make use of expensive deposition material stablized in desired region and implements equably, importantly according to making the deposition material 98 of inclination movement arrive the mode of glass substrate 92 to form deposition mask 20 as far as possible.Namely, in the cross section of Fig. 4 ~ Fig. 6 orthogonal with sheet face of deposition mask 20, minimum angles θ 1 (with reference to Fig. 4) the abundant change that straight line L1 is formed relative to the normal direction of deposition mask 20 is greatly favourable, and described straight line L1 is by other optional positions as the connection section 41 of part and the wall 31 of the 1st recess 30 with minimum sectional area of communicating pores 25.
As one of method for adding wide-angle θ 1, can consider, the thickness of deposition mask 20 is reduced, thus, the height of the wall 36 of the wall 31 of the 1st recess 30, the 2nd recess 35 be diminished.That is, can saying, as the metal sheet 21 for forming deposition mask 20, in the scope of intensity can guaranteeing deposition mask 20, preferably using the metal sheet 21 that thickness is thin as far as possible.
As the additive method for adding wide-angle θ 1, it is also conceivable to the profile optimizing making the 1st recess 30.Such as according to the present embodiment, converged by the wall 31 of adjacent two the 1st recesses 30, compare having with the recess of the wall (profile) shown in dotted line of not converging with other recesses, significantly can strengthen this angle θ 1.Its reason is below described.
As below describe in detail, the 1st recess 30 is formed by etching the 1st 21a of metal sheet 21.The wall of the recess formed by etching is generally in curved, and this curved projection is towards erosion direction.Therefore, the wall 31 of the recess formed by etching starts in the region of side precipitous in etching, starting the darkest side of region, the i.e. recess of contrary side, side, to tilt significantly relative to the normal direction of metal sheet 21 with etching.On the other hand, in illustrated deposition mask 20, the wall 31 of two adjacent the 1st recesses 30 starts side in etching and converges, therefore, the shape that the outline of the part 43 that the front edge 32 of the wall 31 of two the 1st recesses 30 converges is not precipitous, but the shape of chamfering.Therefore, the wall 31 of most 1st recess 30 of formation communicating pores 25 can be made effectively to tilt relative to the normal direction of deposition mask.That is, wide-angle θ 1 can be added.
Utilize the deposition mask 20 based on present embodiment, in the whole region of effective area 22, the tilt angle theta 1 that the wall 31 that effectively can increase the 1st recess 30 is formed with the normal direction of deposition mask.Thus, can while the utilising efficiency effectively improving deposition material 98, high precision and evaporation under stably implementing desired pattern.
In addition, as as described in manufacture method described later, this metal sheet 21 being etched from the 1st 21a side of the 1st metal sheet that 20a is corresponding 21 with deposition mask 20 and make the 1st recess 30, in the whole region of the metal sheet 21 of the effective area 22 for the formation of deposition mask 20, the 1st 21a of this metal sheet 21 is etched because of etching.That is, deposition mask be less than 100% relative to deposition mask along the maximum ga(u)ge Tb in the peripheral region 23 of normal direction along the maximum ga(u)ge Ta in the effective area 22 of normal direction.So, from the viewpoint of the utilising efficiency improving deposition material, the thickness integral thinned in effective area 22 is preferably made.On the other hand, from the aspect of deposition mask intensity, deposition mask along the maximum ga(u)ge Ta in the effective area 22 of normal direction be preferably deposition mask along more than 50% of the maximum ga(u)ge Tb in the peripheral region 23 of normal direction.When maximum ga(u)ge Ta in effective area 22 is more than 50% of maximum ga(u)ge Tb in peripheral region 23, when deposition mask 20 tensioning is located on framework 15, effectively can suppress the distortion of deposition mask 20 in effective area 22, thus, the evaporation under desired pattern can effectively be implemented.
But, in order to obtain the little metal sheet of thickness 21, need to strengthen rolling rate when manufacturing metal sheet 21 by rolling mother metal.But rolling rate is larger, the stress and the unrelieved stress that residue in metal sheet are also larger.If unrelieved stress is large, then when making deposition mask 20 at etching metal plate 21, the side of the enforcement etching in metal sheet 21, unrelieved stress is eliminated, its result, and the deposition mask 20 obtained can produce warpage.Can think, when warpage is large, deposition mask 20 cannot be made fully close in substrate 92, its result, the positional precision of evaporation reduces.In addition, in the present embodiment, as mentioned above, in the wide cut region to the effective area 22 of the 1st 21a of metal sheet 21, etch in such as whole region, make deposition mask 20 thus.Therefore, compared with carrying out situation about etching with the local of only the 1st 21a, the degree of the 1st unrelieved stress that 21a side is eliminated of metal sheet 21 becomes large, its result, and the possibility that warpage occurs also becomes large.Therefore, as described later, importantly filter out the metal sheet 21 being difficult to produce warpage when becoming deposition mask 20 to use.
As mentioned above, in present embodiment, communicating pores 25 in each effective area 22 with predetermined pattern arrangement.It should be noted that, when for carrying out colored display, deposition mask 20 (deposition mask device 10) and glass substrate 92 relative movement bit by bit can be made, evaporation is red successively luminous organic material, green luminous organic material and blue luminous organic material along the orientation of communicating pores 25 (an above-mentioned direction).
It should be noted that, the framework 15 of deposition mask device 10 is installed on the periphery of the deposition mask 20 of rectangle.Deposition mask is remained on the state of tensioning by framework 15 according to the mode not making deposition mask 20 bend.Deposition mask 20 and framework 15 are fixed by such as spot welding mutually.
The internal implementation of the evaporation coating device 90 of vapor deposition treatment under high-temperature atmosphere.Therefore, during vapor deposition treatment, remain on the deposition mask 20 of evaporation coating device 90 inside, framework 15 and substrate 92 and also heated.Now, deposition mask, framework 15 and substrate 92 demonstrate the behavior of the dimensional change based on each thermal expansion.In this case, if deposition mask 20, framework 15 are comparatively large with the thermal expansion coefficient difference of substrate 92, then misplace because of the difference of their dimensional change, its result, the dimensional precision and the positional precision that are attached to the deposition material on substrate 92 can reduce.In order to solve such problem, the thermal expansivity of preferred deposition mask 20 and framework 15 and the thermal expansivity of substrate 92 are equal value.Such as, when using glass substrate 92 as substrate 92, as the material of deposition mask 20 and framework 15, alloy and the Invar alloy material of the nickel being added with 36% can be used in iron.
Below the effect of the present embodiment with such formation is described.At this, first the manufacture method of the metal sheet for the manufacture of deposition mask is described.Then the method using the metal sheet obtained to manufacture deposition mask is described.Thereafter, the method using the deposition mask obtained to carry out the evaporation of deposition material on substrate is described.
(manufacture method of metal sheet)
First, be described with reference to Fig. 7 (a), 7 (b), Fig. 8 (a), 8 (b) and Fig. 9 (a), 9 (b) manufacture method to metal sheet.Fig. 7 (a) obtains the figure of the operation of the metal sheet with desired thickness by rolling mother metal for illustrating, Fig. 7 (b) is for illustrating the figure to the operation that the metal sheet obtained by rolling is annealed.Fig. 8 (a) is for illustrating the figure of the sample cut out from the metal sheet utilizing the operation shown in Fig. 7 (a), 7 (b) to obtain, and Fig. 8 (b) is for illustrating the figure of the etched sample obtained by etching the 1st face of the sample shown in Fig. 8 (a).Fig. 9 (a), (b) are respectively and illustrate that the sample cut out from metal sheet is placed in stereographic map and the vertical view of the appearance in mounting table.
[rolling process]
First, as shown in Fig. 7 (a), prepare the mother metal 55 containing Invar alloy material, transmit this mother metal 55 to the reduction unit 56 comprising a pair Rolling roller 56a, 56b.Arrive mother metal 55 between a pair Rolling roller 56a, 56b by a pair Rolling roller 56a, 56b rolling, its result, the thickness of mother metal 55 reduces, and is stretched along delivery direction simultaneously.Thus, thickness t can be arrived
0long metal sheet 64.As shown in Fig. 7 (a), long metal sheet 64 can be batched on core 61 and form coiling body 62.
[annealing operation]
Thereafter, accumulate the unrelieved stress in long metal sheet 64 in order to eliminate because of rolling, as shown in Fig. 7 (b), use annealing device 57 pairs of long metal sheets 64 to anneal.As shown in Fig. 7 (b), long metal sheet 64 can be stretched while implement annealing operation in delivery direction (length direction).Its result, can obtain unrelieved stress be removed to a certain degree, thickness t
0long metal sheet 64.As shown in Fig. 7 (b), long metal sheet 64 can be batched on core 61 and form coiling body 62.It should be noted that, thickness t
0be generally equal to the maximum ga(u)ge Tb in the peripheral region 23 of deposition mask 20.
It should be noted that, the form of rolling process and annealing operation is not particularly limited to the form shown in Fig. 7 (a), (b).Such as, rolling process can utilize 2 to implement above Rolling roller 56a, 56b.In addition, also can by rolling process and annealing operation be carried out more than 2 times to make thickness t repeatedly
0long metal sheet 64.In addition, in Fig. 7 (b), show annealing operation and long metal sheet 64 is being stretched while carry out the example implemented in length direction, but be not limited thereto, also can be taken up at long metal sheet 64 and implement annealing operation under the state of core 61.It should be noted that, long metal sheet 64 be taken up under the state of core 61, implement annealing operation when, sometimes can produce the problem of batching the corresponding warpage in footpath with coiling body 62 on long metal sheet 64.Therefore, according to the material batching footpath, form mother metal 55 of coiling body 62, long metal sheet 64 is stretched while it is favourable for implementing annealing operation in length direction.
[inspection operation]
Thereafter, the inspection operation that the degree of the warpage of obtained long metal sheet 64 is checked is implemented.First, as shown in Fig. 8 (a), from long metal sheet 64, cut out long l, wide w and thick t
0sample 75.In Fig. 8 (a), the 1st of sample 75 and the 2nd represents with symbol 75a and 75b respectively.1st 75a and the 2nd 75b is the face orthogonal with the thickness direction of sample 75, and is face in opposite directions each other.In addition, in Fig. 8, represent with symbol 75c and 75d respectively in a pair side that the length direction of sample 75 extends between the 1st 75a and the 2nd 75b.Long l, wide w and thick t
0suitably can determine according to the size etc. of the deposition mask 20 obtained by long metal sheet 64 as described later, such as, reach that long l is 170mm, wide w is 30mm, thick t
0for more than 0.020mm and in the scope of below 0.100mm.
Then, as shown in Fig. 8 (b), from the 1st 75a side sample 75 etched by the whole region of etching area 75f at the 1st 75a, until sample 75 is t by the thickness of etching area 75f
1.It should be noted that, be the etched region in sample 75 by etching area 75f.Such as, be that sample 75 played l except two ends 75g1,75g2 of length direction by etching area 75f
1, l
2within region beyond region.Length l near two ends 75g1,75g2
1, l
2region be not etched region.As described later, so not etched region guarantee when sample 75 is placed in mounting table the stability of sample 75 in etc. in play a role.
From Fig. 8 (b), the length direction of sample 75 by the length l of etching area 75f
3deduct length l from the length l of sample 75
1with length l
2after length.Length l
1with length l
2suitably determine, to guarantee the stability of sample 75 when being placed in mounting table by sample 75, such as, be 10mm.In this case, length direction by the length l of etching area 75f
3for 150mm.
The thickness t of the sample 75 after etching
1suitably determine, such as thickness t according to the degree in order to make the etching that deposition mask 20 is implemented
1be 1/3 × t
0above and 2/3 × t
0in following scope.Herein, due in sample 75 have accumulated unrelieved stress to a certain degree, therefore by etching from the 1st 75a side sample 75, in sample 75, produce warpage.Below the operation of the curvature measuring warpage is described.
As the method for the warpage for assess sample, known method is, the one end supporting sample makes sample hang aloft, calculates the curvature of sample warpage simultaneously.But, in this case, in the measurement result of the curvature of warpage, not only reflect result from unrelieved stress eliminate key element, also reflect result from sample deadweight key element.Therefore, can think, accurately can not evaluate and result from the warpage of sample of unrelieved stress.At this, according to the present embodiment, as shown in Fig. 9 (a), be that sample 75 is placed in predetermined mounting table 76 by the mode of level according to the side 75c of sample 75, calculate the curvature of the warpage of sample 75 in this condition.Therefore, according to the present embodiment, more accurately can evaluate and result from the warpage of sample 75 of unrelieved stress.It should be noted that, near two ends 75g1,75g2 of sample 75, remain length l
1, l
2there is originally thickness t
0region, therefore, sample 75 can be made stably to stand in mounting table 76.In addition, two ends 75g1,75g2 of easy sample dominated by hand 75.Further, as described later, when the operation obtaining sample 75 comprises an operation part for metal sheet cut off, the impact of the strain caused by cut-out is had thickness t originally
0region absorbed, therefore can prevent or suppress the impact of strain caused by cutting off to involve by etching area 75f.
Below the concrete grammar of the curvature k of the warpage for calculation sample 75 is described.Fig. 9 (b) illustrates vertical view when being in the sample 75 of the state that warpage alongst occurs from top view.In Fig. 9 (b), being represented with symbol 75e by the pair of end portions of the length direction of etching area 75f of sample 75.First, to sample 75 by the tip spacing of the length direction of etching area 75f being measured by the degree of depth y of the warpage of etching area 75f (mm) from x (mm) and sample 75.It should be noted that, the degree of depth y of warpage refers to, the straight line be linked to be by the pair of end portions 75e of etching area 75f of sample 75 and sample 75 by the maximum value of the distance between etching area 75f.Then, the radius-of-curvature ρ corresponding to the warpage of etching area 75f of sample 75 is calculated based on following formula.
ρ＝(y/2)+(x
2/8y)
Then the curvature k of the warpage of sample 75 is calculated based on following formula.
k＝1/ρ
So, the curvature k (mm of the warpage of sample 75 can be obtained
-1).
Thereafter, based on the value of obtained curvature k, implement the screening of long metal sheet 64.At this, the value selecting curvature k is the long metal sheet 64 of the sample 75 of below benchmark value, only uses above-mentioned long metal sheet 64 to implement the screening of long metal sheet 64 thus in the manufacturing process of deposition mask 20 described later.Suitably determine benchmark value according to for the positional precision etc. required by the evaporation employing deposition mask 20, the value that such as have selected curvature k is 0.008mm
-1the long metal sheet 64 of following sample 75 is identified as non-defective unit.By implementing such screening, even if when producing warpage because of the etching of the manufacturing process of deposition mask 20 in deposition mask 20, also can make the degree of this warpage in tolerable limit.Thus, the characteristic of manufactured deposition mask 20 can be improved.In addition, the yield rate in the manufacturing process of deposition mask 20 can be improved.
It should be noted that, as shown in Fig. 9 (a), between mounting table and sample 75, also can setting party's ruled paper 77 etc. be used for making range finding be easy to means.Thus, above-mentioned tip spacing can be made easy from the mensuration of the degree of depth y (mm) of x (mm) and warpage, thus curvature k can be calculated rapidly.
In addition, as shown in Fig. 9 (a), can form hollow bulb 76b in the mode of above-below direction vibration in mounting table 76 according to the mounting surface 76a of mounting sample 75.In this case, first, sample 75 is loaded in mounting table 76 or on the squared paper 77 be configured in mounting table 76, then, by to knock mounting surface 76a etc. and to make mounting surface 76a vibrate at above-below direction, thus can make to produce the frictional force obtained between sample 75 and mounting table 76 or squared paper 77 and be eliminated or alleviate.Thus, the impact occurring frictional force in the measurement result of curvature can be suppressed.Be not particularly limited the size of mounting table 76 and hollow bulb 76b etc., the width of such as mounting table 76 and length are 300mm, and the thickness of mounting table 76 is 50mm.In addition, the mode that the hollow bulb 76b of mounting table 76 can be respectively 5mm according to such as the mounting surface 76a of mounting table 76 and the thickness of bottom surface is formed.The material forming mounting table 76 is not particularly limited, and such as mounting table 76 can be made up of acrylic resin.
(manufacture method of deposition mask)
Below, main with reference to Figure 10 ~ Figure 17, be described to the method manufacturing deposition mask 20 utilizing the long metal sheet 64 as above filtered out.In the manufacture method of the deposition mask 20 below illustrated, as shown in Figure 10, supply long metal sheet 64, this long metal sheet 64 forms communicating pores 25, further severing long metal sheet 64, thus obtains the deposition mask 20 that is made up of the metal sheet 21 of sheet.
More particularly, the manufacture method of deposition mask 20 comprises: supply extends into the operation of banded long metal sheet 64; The etching that make use of photolithographic techniques is implemented on long metal sheet 64, long metal sheet 64 is formed from the 1st 64a side the operation of the 1st recess 30; With, the etching that make use of photolithographic techniques is implemented on long metal sheet 64, long metal sheet 64 is formed from the 2nd 64b side the operation of the 2nd recess 35.Further, the 1st recess 30 and the 2nd recess 35 that are formed at long metal sheet 64 communicate mutually, thus produce communicating pores 25 on long metal sheet 64.In the example shown in Figure 10, the formation process of the 2nd recess 35 was implemented before the formation process of the 1st recess 30, and was provided with the operation sealed the 2nd made recess 35 further between the formation process and the formation process of the 1st recess 30 of the 2nd recess 35.Below describe each operation in detail.
Figure 10 shows the manufacturing installation 60 for making deposition mask 20.As shown in Figure 10, first, prepare long metal sheet 64 to batch the coiling body 62 on core 61.Further, by rotating this core 61, coiling body 62 is unreeled, thus supply extends into banded long metal sheet 64 as shown in Figure 10.It should be noted that, long metal sheet 64 forms the metal sheet 21 of sheet and then forms deposition mask 20 after being formed with communicating pores 25.
The long metal sheet 64 be supplied to is sent to etching system (etching unit) 70 by transfer roller 72.Utilize etching unit 70, implement each process shown in Figure 11 ~ Figure 17.First, as shown in figure 11, the 1st 64a of long metal sheet 64 forms Resist patterns (also referred to as resist) 65a, and form Resist patterns (also referred to as resist) 65b on the 2nd 64b of long metal sheet 64.Specifically, implement as follows.First, on the 1st 64a of long metal sheet 64, the photosensitivity anticorrosive additive material of coating minus on (on the face of the downside in the paper of Figure 11) and the 2nd 64b, long metal sheet 64 forms resist film.Then, prepare glass dry plate, glass dry plate through to the region for removing in resist film, can not be configured on resist film to make light by this glass dry plate.Thereafter, across glass dry plate, resist film is exposed, further resist film is developed.So, Resist patterns (also referred to as resist) 65a can be formed on the 64a of the 1st of long metal sheet 64, on the 2nd 64b of long metal sheet 64, form Resist patterns (also referred to as resist) 65b.
It should be noted that, as photosensitivity anticorrosive additive material, the photosensitivity anticorrosive additive material of eurymeric can be used.In this case, as exposed mask, make light transmission to the exposed mask in the region for removing in resist film.
Then, as shown in figure 12, using the Resist patterns 65b of formation on long metal sheet 64 as mask, use etching solution (such as iron(ic) chloride (III) solution), carve from the 2nd 64b lateral erosion of long metal sheet 64.Such as, etching solution sprays to the 2nd 64b of long metal sheet 64 across Resist patterns 65b from nozzle, the side of described nozzle arrangement faced by the 2nd 64b of the long metal sheet 64 with transmission.Its result, as shown in figure 12, in the region do not covered by Resist patterns 65b in long metal sheet 64, the erosion caused by etching solution advances.So, the 2nd a large amount of recesses 35 is formed from the 2nd 64b side at long metal sheet 64.
Thereafter, as shown in figure 13, utilize the indefatigable resin 69 of etching solution tool, the 2nd formed recess 35 is coated to.That is, utilize the indefatigable resin 69 of etching solution tool, the 2nd recess 35 is sealed.In the example shown in Figure 13, the film of resin 69 is formed according to the mode not only covering the 2nd recess 35 but also covering the 2nd 64b (Resist patterns 65b) formed.
Then, as shown in figure 14, the 2nd etching is carried out to long metal sheet 64.In the 2nd etching, long metal sheet 64 is only etched from the 1st 64a side, and from the 1st 64a side, the formation of the 1st recess 30 advances.The 2nd the 64b side due to long metal sheet 64 is coated with the indefatigable resin 69 of etching solution tool, and therefore, the shape of the 2nd recess 35 of the shape desired by being formed by the 1st etching can not be impaired.
The part that with etching solution contact of erosion in long metal sheet 64 based on etching is carried out.Therefore, corrode and not only advance in the normal direction (thickness direction) of long metal sheet 64, also advance in the direction in the plate face along long metal sheet 64.Its result, as shown in figure 15, the normal direction being etched in long metal sheet 64 advances and the 1st recess 30 is connected with the 2nd recess 35, moreover, two the 1st recesses 30 that the position faced by two adjacent hole 66a of Resist patterns 65a is formed respectively converge in the inner side of the bridge portion 67a between two hole 66a.
As shown in figure 16, advance further from the etching of the 1st 64a side of long metal sheet 64.As shown in figure 16, the part 43 of converging that two adjacent the 1st recesses 30 merge departs from Resist patterns 65a, this being under Resist patterns 65a converges in part 43, and the erosion caused by etching also advances in the normal direction (thickness direction) of metal sheet 64.Thus, what the side towards the normal direction along deposition mask was sharp-pointed converge part 43 is etched from the side of the normal direction along deposition mask, thus chamfering as shown in Figure 16.Thus, the tiltangleθ 1 that the wall 31 of the 1st recess 30 can be made to be formed relative to the normal direction of deposition mask increases.
So, based on erosion the advancing for the formation of in the whole region of effective area 22 at long metal sheet 64 of the 1st 64a of the long metal sheet 64 of etching.Thus, the maximum ga(u)ge Tb of the long metal sheet before etching 64 is compared for the formation of the maximum ga(u)ge Ta along normal direction of the long metal sheet 64 in the region of effective area 22 thinning.
As mentioned above, only advance from the etching of the 1st 64a side of long metal sheet 64 amount preset, the 2nd etching of long metal sheet 64 is terminated.Now, the 1st recess 30 extends to the position of arrival the 2nd recess 35 along the thickness direction of long metal sheet 64, thus utilizes the 1st recess 30 that mutually communicates and the 2nd recess 35 to form communicating pores 25 on long metal sheet 64.
Thereafter, as shown in figure 17, resin 69 is removed from long metal sheet 64.Resin molding 69 can be removed by using such as alkali system stripping liquid.It should be noted that, when using alkali system stripping liquid, as shown in figure 17, also remove Resist patterns 65a, 65b with resin 69 simultaneously.
The transfer roller 72,72 carrying out rotating with the state clamping this long metal sheet 64 is utilized to transmit the long metal sheet 64 being so formed with a large amount of communicating pores 25 to shut-off device (cutting unit) 73.It should be noted that, acting on the tension force (drawing force) of long metal sheet 64 by utilizing the rotation of this transfer roller 72,72, above-mentioned supply core 61 being rotated, thus supplies long metal sheet 64 by coiling body 62.
Thereafter, utilize shut-off device (cutting unit) 73 that the long metal sheet 64 being formed with a large amount of recess 61 is cut into predetermined length, thus obtain the sheet metal plate 21 being formed with a large amount of communicating pores 25.
As above operate, the deposition mask 20 be made up of the metal sheet 21 being formed with a large amount of communicating pores 25 can be obtained.At this, according to the present embodiment, the 1st 21a of metal sheet 21 is etched in the whole region of effective area 22.Therefore, the thickness of the effective area 22 of deposition mask 20 is reduced, and the outline of the part 43 that the first end margin 32 of the wall 31 of two the 1st recesses 30 formed the 1st 21a side can be made to converge is the shape of chamfering.Therefore, above-mentioned angle θ 1 can be increased, thus, the utilising efficiency of deposition material and the positional precision of evaporation can be improved.
But, in the whole region of effective area 22, the difference that etching can increase the degree of the degree of the etching of the 1st 21a side and the etching of the 2nd 21b side is carried out to the 1st 21a of metal sheet 21.That is, the unrelieved stress that can be eliminated between the 1st 21a side and the 2nd 21b side unbalanced, even can produce the metal sheet 21 i.e. warpage of deposition mask 20.At this, according to the present embodiment, employ as mentioned above based on the long metal sheet 64 that the degree of the warpage of sample 75 filters out in advance.Therefore, even if when there are differences in the degree etched between the 1st 21a side and the 2nd 21b side, the degree of the warpage that deposition mask 20 also can be made to produce is in tolerable limit.Therefore, according to the present embodiment, by reducing the thickness of deposition mask 20 and increasing the tilt angle theta 1 of wall 31 of the 1st recess 30 of deposition mask 20, the positional precision of the utilising efficiency of deposition material and evaporation can be improved, profile optimizing can be made, the raising of the yield rate of the manufacturing process of the reduction of the warpage of deposition mask 20 and deposition mask 20 can be made simultaneously to realize.Therefore, the deposition mask 20 with excellent specific property is provided Absorbable organic halogens.
(evaporation coating method)
Then, to using the deposition mask 20 obtained the method for deposition material evaporation on substrate 92 to be described.First, as shown in Figure 2, make deposition mask 20 and substrate 92 closely sealed.Now, deposition mask 20 tensioning is located on framework 15, thus makes the face of deposition mask 20 be parallel to the face of substrate 92.At this, according to the present embodiment, the warpage degree based on sample 75 is employed and the long metal sheet 64 filtered out in advance.Therefore, compared with not implementing the situation of such screening, the degree of the warpage of deposition mask 20 is reduced equably.Therefore, by suitable tension force is put on deposition mask 20, deposition mask 20 can be kept abreast relative to substrate 92.That is, in order to correct the warpage caused by the elimination of internal stress (unrelieved stress), the high tensile without the need to deposition mask 20 will be made to produce the degree of fold puts on deposition mask 20.Therefore, can make deposition mask 20 fully and substrate 92 closely sealed, thereby, it is possible to high positional precision by deposition material evaporation on substrate 92.Therefore, when forming the pixel of organic EL display by evaporation, dimensional precision and the positional precision of the pixel of organic EL display can be improved.Thus, the organic EL display of fine can be produced.
It should be noted that, in the example shown in above-mentioned present embodiment, the effective area 22 of more than 2 of deposition mask 20 along and a parallel direction, one side of deposition mask 20 configure across predetermined interval, and along and the orthogonal other direction in an above-mentioned direction configure across predetermined interval.But, be not limited thereto, as shown in figure 18, deposition mask 20 also can comprise the effective area 22 of more than 2 that forms a line along a direction and deposition mask device 10 has the deposition mask 20 arranging on the direction orthogonal with its length direction (direction) and be installed on more than 2 on framework 15.The method manufacturing such deposition mask 20 is not particularly limited.Such as, the long metal sheet 64 i.e. metal sheet 21 with the width corresponding with the deposition mask 20 shown in Figure 18 can be used to manufacture deposition mask 20.Or, after forming the effective area 22 of more than 2 along a long metal sheet 64 i.e. direction of metal sheet 21 and other direction, metal sheet 21 is cut off along its length direction, thus also can make the deposition mask 20 shown in Figure 18.
Embodiment
Further illustrate the present invention below by embodiment, but only otherwise exceed its main points, the present invention is just not limited to the record of following examples.
(making of sample)
First, above-mentioned rolling process and annealing operation are implemented to the mother metal containing Invar alloy material, thus manufacture width and the t with 500mm
0the coiling body (the 1st coiling body) that batches of the long metal sheet of thickness.Thereafter, the 1st coiling body is cut out the length of 300mm, thus obtain the metal sheet 63 shown in Figure 19 (a).In Figure 19 (a), arrow D1 corresponds to delivery direction, rolling direction during rolling process, and arrow D2 corresponds to width during rolling process.
Then, as shown in Figure 19 (b), from metal sheet 63, multi-disc sample 75 is obtained.Sample 75 is of a size of long 170mm × wide 30mm.It should be noted that, the length direction of sample 75 is the direction parallel with arrow D1, and the width of sample 75 is the direction parallel with arrow D2.The sheet number obtaining sample 75 from 1 metal sheet 63 is 15.As the method obtaining multi-disc sample 75 from metal sheet 63, employ etching.Specifically, first, arrange Resist patterns in the 1st side of metal sheet 63 and these both sides, the 2nd side, this Resist patterns covers should become the region of sample 75 and the outer frame part 63a of metal sheet 63.Then, using this Resist patterns as mask, from the 1st side and these both sides, the 2nd side, metal sheet 63 is etched.Thus, as shown in Figure 19 (b), between the region that should become sample 75 in the outer frame part 63a and metal sheet 63 of metal sheet 63, define communicating pores 63b.It should be noted that, etching implements according to the mode be retained for the outer frame part 63a of connection metal the plate 63 and connection section 63c of sample 75.Connection section 63c is of a size of long 3mm × wide about 1mm.
Then, as shown in Figure 19 (c), from the 1st 75a side being etched sample 75 by the whole region of etching area 75f at the 1st 75a of sample 75, until sample 75 reached (1/2-8/100) × t by the thickness of etching area 75f
0above and (1/2+8/100) × t
0in following scope.Thereafter, by cutting off connection section 63c, from metal sheet 63,15 samples 75 through etching are taken out.It should be noted that, in order to prevent the impact because cutting off caused strain from involving by etching area 75f, as the means cutting off connection section 63c, can fine scissors be used.
It should be noted that, what metal sheet 63 is formed above-mentioned communicating pores 63b and makes sample 75 is (1/2-8/100) × t by the thickness of etching area 75f
0above and (1/2+8/100) × t
0all can be implemented by same etch processes in following scope simultaneously.
(calculating of the curvature of sample)
Below, same with the situation of above-mentioned inspection operation, obtain the curvature k (mm of the warpage in each sample 75 of etching successively
-1).Specifically, first, according to the mode of the side 75c level of sample 75, across squared paper 77, sample 75 is placed on the mounting surface 76a of the mounting table 76 being formed with hollow bulb 76b.Then, vibration is applied, till the state of the warpage of visual lower sample 75 does not change to the mounting surface 76a of mounting table 76.Thereafter, utilize the scale of squared paper 77 read by the tip spacing of the length direction of etching area 75f from x (mm) and sample 75 by the degree of depth y of the warpage of etching area 75f (mm).Then, the radius-of-curvature ρ corresponding by the warpage of etching area 75f with sample 75 is calculated based on following formula.
ρ＝(y/2)+(x
2/8y)
Then, the curvature k of the warpage of sample 75 is calculated based on following formula.
k＝1/ρ
In the measurement result of the curvature k of the warpage in 15 samples 75 obtained from the 1st coiling body, maximum value is 7.6 × 10
-3mm
-1.
(evaluation of 1 effect)
Use the manufacture method of above-mentioned deposition mask, manufacture deposition mask by the long metal sheet of the 1st coiling body.Then the curling of the deposition mask obtained is measured.It should be noted that, curlingly to refer to, the maximum value that the deposition mask at above-below direction shown when being placed on horizontal plane by deposition mask rises and falls.As a result, the curling of the deposition mask obtained by the long metal sheet of the 1st coiling body is 0.25mm.
(evaluations of 2 effects)
Use the deposition mask made by the long metal sheet of the 1st coiling body, substrate carries out the evaporation of deposition material.It should be noted that, the pattern of a large amount of communicating poress that the deposition mask used is formed is the candy strip corresponding with picture element density 300ppi.In addition, as deposition material, employ the green luminous organic material radiating green light.Thereafter, about each layer of the green light emitting layer of more than 2 layer that by green luminous organic material formed of evaporation on substrate, their centre coordinate position and feature sizes is measured.In addition, for the centre coordinate position determined and feature sizes, the bias relative to design load is calculated respectively.And judge that whether bias is as below permissible value.Now, the permissible value of the bias of centre coordinate position is ± 4 μm, and the permissible value of the bias of feature sizes is ± 2 μm.As a result, the bias of any one in centre coordinate position and feature sizes is all below permissible value.That is, in the positional precision of deposition material and dimensional precision any one also all good (OK).
The measurement result of the curvature of the sample obtained from the 1st coiling body shown in table 1 and above-mentioned 1 effect of deposition mask made about the long metal sheet by the 1st coiling body and the evaluation result of 2 effects.In addition, in the same manner as the situation of the 1st coiling body, produce the 2nd coiling body ~ the 20th coiling body by the mother metal containing Invar alloy material.Further, in the same manner as the situation of the 1st coiling body, the mensuration of the curvature of the sample obtained from each coiling body and above-mentioned 1 effect of deposition mask made about the long metal sheet by each coiling body and the evaluation of 2 effects are implemented for the 2nd coiling body ~ the 20th coiling body.The results are shown in table 1.
[table 1]
As shown in table 1, the curvature of the sample obtained from the 1st coiling body ~ the 10th coiling body is 0.008mm
-1below.Further, the curling of deposition mask made by the long metal sheet of the 1st coiling body ~ the 10th coiling body is below 0.25mm.And then, in the evaporation employing the deposition mask made by the long metal sheet of the 1st coiling body ~ the 10th coiling body, the positional precision of deposition material and dimensional precision all good (OK).
In contrast, the curvature of the sample obtained from the 11st coiling body ~ the 20th coiling body is all more than 0.008mm
-1.In addition, the deposition mask made by the long metal sheet of the 11st coiling body ~ the 20th coiling body curling all more than 0.25mm.And then, in the evaporation employing the deposition mask made by the long metal sheet of the 11st coiling body ~ the 20th coiling body, the positional precision of a part for deposition material and whole dimensional precisioies are bad (NG), are comprehensively all bad (NG).That is, the position of the deposition material of evaporation on substrate and size departing from for outside tolerable limit relative to design.
Can think thus, by using the curvature of acquired sample for 0.008mm
-1following coiling body, can obtain the deposition mask with good evaporation characteristic.
Nomenclature
20 deposition masks
The 1st of 20a deposition mask
The 2nd of 20b deposition mask
21 metal sheets
The 1st of 21a metal sheet
The 2nd of 21b metal sheet
22 effective areas
23 peripheral regions
25 communicating poress
30 the 1st recesses
31 walls
35 the 2nd recesses
36 walls
55 mother metals
56 reduction units
57 annealing devices
61 cores
62 coiling bodies
64 long metal sheets
The 1st of 64a long metal sheet
The 2nd of 64b long metal sheet
75 samples
The 1st of 75a sample
The 2nd of 75b sample
75c, 75d side
75f is by etching area
76 mounting tables
76a mounting surface
76b hollow bulb
77 squared papers
Claims (13)
1. a manufacture method for metal sheet, this metal sheet by formation more than 2 communicating poress and for the manufacture of deposition mask, wherein,
The described communicating pores of described deposition mask is formed by etching described metal sheet,
The manufacture method of described metal sheet possesses following operation:
Rolling process, is rolled to obtain having thickness t to mother metal
0described metal sheet; With
Annealing operation, by described metal sheet annealing with the internal stress removing described metal sheet,
Described metal sheet has the 1st and the 2nd, the 1st and the 2nd orthogonal relative to the thickness direction of described metal sheet and each other in opposite directions,
When having carried out the sample obtained from the described metal sheet after described annealing operation etching, the curvature k of the warpage of the sample after etching has been 0.008mm
-1below,
Described curvature k is the value obtained as follows: first, the described sample of long 170mm, wide 30mm is obtained from the described metal sheet after described annealing operation, then, the two ends except length direction in described sample are risen the long 150mm except the region within 10mm, wide 30mm region as by etching area, from described 1st side being etched described sample by the whole region of etching area at described sample, until the described thickness by etching area reaches 1/3 × t
0above and 2/3 × t
0in following scope, thereafter, described sample after etching is placed in predetermined mounting table according to the mode that its side is level, then, what measure described sample is described by described by the degree of depth y of the warpage of etching area (mm) from x (mm) and described sample of the tip spacing of the length direction of etching area, thereafter, described tip spacing is substituted into following formula from x and described degree of depth y, obtain described curvature k thus
k＝1/ρ、ρ＝(y/2)+(x
2/8y)。
2. the manufacture method of metal sheet as claimed in claim 1, wherein, while length direction stretches described metal sheet, implements described annealing operation.
3. the manufacture method of metal sheet as claimed in claim 1, wherein, implements described annealing operation under being taken at the state on core at described metal plate coils.
4. the manufacture method of the metal sheet as described in any one of claims 1 to 3, wherein, the thermal expansivity of described mother metal is the value equal with the thermal expansivity of substrate, and on this substrate, across the deposition mask manufactured by described metal sheet, film forming has deposition material.
5. the manufacture method of metal sheet as claimed in claim 1, wherein, described mother metal contains Invar alloy material.
6. a metal sheet, this metal sheet is by forming more than 2 communicating poress and for the manufacture of the metal sheet of deposition mask, wherein,
Described metal sheet has thickness t
0, and described metal sheet has the 1st and the 2nd, the 1st and the 2nd orthogonal relative to the thickness direction of described metal sheet and each other in opposite directions,
When having carried out the sample obtained from described metal sheet etching, the curvature k of the warpage of the sample after etching has been 0.008mm
-1below,
Described curvature k is the value obtained as follows: first, the described sample of long 170mm, wide 30mm is obtained from described metal sheet, then, the two ends except length direction in described sample are risen the long 150mm except the region within 10mm, wide 30mm region as by etching area, from described 1st side being etched described sample by the whole region of etching area at described sample, until the described thickness by etching area reaches 1/3 × t
0above and 2/3 × t
0in following scope, thereafter, described sample after etching is placed in predetermined mounting table according to the mode that its side is level, then, what measure described sample is described by described by the degree of depth y of the warpage of etching area (mm) from x (mm) and described sample of the tip spacing of the length direction of etching area, thereafter, described tip spacing is substituted into following formula from x and described degree of depth y, obtain described curvature k thus
k＝1/ρ、ρ＝(y/2)+(x
2/8y)。
7. metal sheet as claimed in claim 6, wherein, the thermal expansivity of described metal sheet is the value equal with the thermal expansivity of substrate, and on this substrate, across the deposition mask manufactured by described metal sheet, film forming has deposition material.
8. metal sheet as claimed in claim 6, wherein, described metal sheet contains Invar alloy material.
9. a manufacture method for deposition mask, this deposition mask possesses the peripheral region of the effective area being formed with more than 2 communicating poress and the surrounding being positioned at described effective area, and wherein, this manufacture method comprises following operation:
Prepare the operation of metal sheet, this metal sheet has thickness t
0, there is the 1st and the 2nd, the 1st and the 2nd orthogonal relative to the thickness direction of described metal sheet and each other in opposite directions; With
Recess formation process, in this operation, etches from described 1st side described metal sheet, in the region of the described metal sheet for the formation of described effective area, form the recess for marking described communicating pores from the 1st side;
When having carried out the sample obtained from described metal sheet etching, the curvature k of the warpage of the sample after etching has been 0.008mm
-1below,
Described curvature k is the value obtained as follows: first, the described sample of long 170mm, wide 30mm is obtained from described metal sheet, then, the two ends except length direction in described sample are risen the long 150mm except the region within 10mm, wide 30mm region as by etching area, from described 1st side being etched described sample by the whole region of etching area at described sample, until the described thickness by etching area reaches 1/3 × t
0above and 2/3 × t
0in following scope, thereafter, described sample after etching is placed in predetermined mounting table according to the mode that its side is level, then, what measure described sample is described by described by the degree of depth y of the warpage of etching area (mm) from x (mm) and described sample of the tip spacing of the length direction of etching area, thereafter, described tip spacing is substituted into following formula from x and described degree of depth y, obtain described curvature k thus
k＝1/ρ、ρ＝(y/2)+(x
2/8y)。
10. the manufacture method of deposition mask as claimed in claim 9, wherein, in described recess formation process, etches described metal sheet from described 1st side in the whole region of described 1st.
The manufacture method of 11. deposition masks as claimed in claim 10, wherein, in described recess formation process, etches described metal sheet, until etched thickness reaches 1/3 × t from described 1st side in the whole region of described 1st
0above and 2/3 × t
0in following scope.
The manufacture method of 12. deposition masks as described in any one of claim 9 ~ 11, wherein, the thermal expansivity of described metal sheet is the value equal with the thermal expansivity of substrate, and on this substrate, across the deposition mask manufactured by described metal sheet, film forming has deposition material.
The manufacture method of 13. deposition masks as claimed in claim 9, wherein, described metal sheet contains Invar alloy material.
Priority Applications (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201711267429.7A CN108048793B (en) | 2013-01-10 | 2014-01-10 | Metal plate, method for producing metal plate, and method for producing vapor deposition mask using metal plate |
| CN201911326369.0A CN110938798A (en) | 2013-01-10 | 2014-01-10 | Method for manufacturing vapor deposition mask |
| CN201711267436.7A CN107858644A (en) | 2013-01-10 | 2014-01-10 | Metallic plate, the manufacture method of metallic plate and the method using metallic plate manufacture deposition mask |
Applications Claiming Priority (5)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013-002924 | 2013-01-10 | ||
| JP2013002924 | 2013-01-10 | ||
| JP2013-153920 | 2013-07-24 | ||
| JP2013153920A JP5382257B1 (en) | 2013-01-10 | 2013-07-24 | Metal plate, method for producing metal plate, and method for producing vapor deposition mask using metal plate |
| PCT/JP2014/050346 WO2014109394A1 (en) | 2013-01-10 | 2014-01-10 | Metal plate, metal plate production method, and method for producing vapor deposition mask using metal plate |
Related Child Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711267429.7A Division CN108048793B (en) | 2013-01-10 | 2014-01-10 | Metal plate, method for producing metal plate, and method for producing vapor deposition mask using metal plate |
| CN201711267436.7A Division CN107858644A (en) | 2013-01-10 | 2014-01-10 | Metallic plate, the manufacture method of metallic plate and the method using metallic plate manufacture deposition mask |
| CN201911326369.0A Division CN110938798A (en) | 2013-01-10 | 2014-01-10 | Method for manufacturing vapor deposition mask |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN104838037A true CN104838037A (en) | 2015-08-12 |
| CN104838037B CN104838037B (en) | 2017-11-21 |
Family
ID=50036549
Family Applications (4)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201911326369.0A Pending CN110938798A (en) | 2013-01-10 | 2014-01-10 | Method for manufacturing vapor deposition mask |
| CN201480003438.3A Active CN104838037B (en) | 2013-01-10 | 2014-01-10 | Metallic plate, the manufacture method of metallic plate and the method using metallic plate manufacture deposition mask |
| CN201711267436.7A Pending CN107858644A (en) | 2013-01-10 | 2014-01-10 | Metallic plate, the manufacture method of metallic plate and the method using metallic plate manufacture deposition mask |
| CN201711267429.7A Active CN108048793B (en) | 2013-01-10 | 2014-01-10 | Metal plate, method for producing metal plate, and method for producing vapor deposition mask using metal plate |
Family Applications Before (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201911326369.0A Pending CN110938798A (en) | 2013-01-10 | 2014-01-10 | Method for manufacturing vapor deposition mask |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201711267436.7A Pending CN107858644A (en) | 2013-01-10 | 2014-01-10 | Metallic plate, the manufacture method of metallic plate and the method using metallic plate manufacture deposition mask |
| CN201711267429.7A Active CN108048793B (en) | 2013-01-10 | 2014-01-10 | Metal plate, method for producing metal plate, and method for producing vapor deposition mask using metal plate |
Country Status (4)
| Country | Link |
|---|---|
| JP (1) | JP5382257B1 (en) |
| KR (2) | KR101761494B1 (en) |
| CN (4) | CN110938798A (en) |
| WO (1) | WO2014109394A1 (en) |
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107815640A (en) * | 2016-09-12 | 2018-03-20 | 三星显示有限公司 | Mask and manufacture include the method for the mask assembly of mask |
| CN107916396A (en) * | 2016-10-07 | 2018-04-17 | 大日本印刷株式会社 | Manufacture method, intermediate products and the deposition mask of deposition mask |
| CN108070823A (en) * | 2016-11-18 | 2018-05-25 | 大日本印刷株式会社 | Deposition mask |
| TWI639720B (en) * | 2016-04-14 | 2018-11-01 | 日商凸版印刷股份有限公司 | Substrate for vapor deposition mask, method for producing substrate for vapor deposition mask, and method for producing vapor deposition mask |
| CN109689921A (en) * | 2016-09-14 | 2019-04-26 | 夏普株式会社 | The manufacturing method of mask sheet, deposition mask, display panel |
| CN111500980A (en) * | 2017-01-10 | 2020-08-07 | 大日本印刷株式会社 | Vapor deposition mask and method for manufacturing vapor deposition mask |
| CN114435754A (en) * | 2016-09-29 | 2022-05-06 | 大日本印刷株式会社 | Vapor deposition mask package, vapor deposition mask packaging method, and vapor deposition mask manufacturing method |
Families Citing this family (18)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP5455099B1 (en) | 2013-09-13 | 2014-03-26 | 大日本印刷株式会社 | Metal plate, metal plate manufacturing method, and mask manufacturing method using metal plate |
| JP5516816B1 (en) | 2013-10-15 | 2014-06-11 | 大日本印刷株式会社 | Metal plate, method for producing metal plate, and method for producing vapor deposition mask using metal plate |
| JP6698265B2 (en) * | 2014-02-14 | 2020-05-27 | 大日本印刷株式会社 | Method for manufacturing vapor deposition mask device, vapor deposition mask with substrate and laminated body |
| JP5641462B1 (en) | 2014-05-13 | 2014-12-17 | 大日本印刷株式会社 | Metal plate, metal plate manufacturing method, and mask manufacturing method using metal plate |
| TWI656229B (en) * | 2015-02-10 | 2019-04-11 | 日商大日本印刷股份有限公司 | Production method of vapor deposition mask for organic EL display device, metal plate used for producing vapor deposition mask for organic EL display device, and production method thereof |
| CN110923622B (en) * | 2015-04-24 | 2021-12-03 | Lg伊诺特有限公司 | Deposition mask |
| KR101603200B1 (en) * | 2015-04-24 | 2016-03-14 | 엘지이노텍 주식회사 | Metal substrate and Mask using the same |
| JP7121918B2 (en) * | 2016-12-14 | 2022-08-19 | 大日本印刷株式会社 | Evaporation mask device and method for manufacturing evaporation mask device |
| JP6851820B2 (en) * | 2016-12-28 | 2021-03-31 | マクセルホールディングス株式会社 | Thin-film deposition mask and its installation method and manufacturing method |
| CN116083843A (en) * | 2017-09-07 | 2023-05-09 | Lg伊诺特有限公司 | Metal material OLED deposition mask and method for measuring residual stress of deposition mask |
| CN210765478U (en) * | 2018-06-08 | 2020-06-16 | 大日本印刷株式会社 | Wound body of metal plate, package body provided with wound body, and metal plate |
| EP3822387A4 (en) * | 2018-07-09 | 2022-05-04 | Dai Nippon Printing Co., Ltd. | Vapor-deposition mask defective determination method, vapor-deposition mask manufacturing method, vapor deposition mask device manufacturing method, vapor-deposition mask selection method, and vapor-deposition mask |
| TWI805853B (en) * | 2018-09-27 | 2023-06-21 | 日商日鐵化學材料股份有限公司 | Metal mask material, manufacturing method and metal mask |
| JP2019151936A (en) * | 2019-06-11 | 2019-09-12 | 大日本印刷株式会社 | Method for manufacturing vapor deposition mask device, vapor deposition mask having substrate, and laminate |
| CN111254386A (en) * | 2020-03-26 | 2020-06-09 | 昆山国显光电有限公司 | Mask strip and mask plate |
| WO2022092848A1 (en) * | 2020-10-30 | 2022-05-05 | 에이피에스홀딩스 주식회사 | Deposition mask |
| KR20220069397A (en) * | 2020-11-20 | 2022-05-27 | 엘지이노텍 주식회사 | Deposition mask for oled pixel deposition |
| CN113005399A (en) * | 2021-02-23 | 2021-06-22 | 合肥鑫晟光电科技有限公司 | Mask plate manufacturing method and mask plate |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1295334A (en) * | 1999-10-29 | 2001-05-16 | 大日本印刷株式会社 | Shadow mask for colour CRT |
| CN1316016A (en) * | 1999-05-07 | 2001-10-03 | 松下电子工业株式会社 | Stainless steel plate for shadow mask and method for production thereof and shadow mask |
| JP2004039319A (en) * | 2002-07-01 | 2004-02-05 | Hitachi Metals Ltd | Metal mask |
| JP2004185890A (en) * | 2002-12-02 | 2004-07-02 | Hitachi Metals Ltd | Metal mask |
| CN1514675A (en) * | 2001-09-25 | 2004-07-21 | 精工爱普生株式会社 | Mask and its mfg. method, electroluminescent apparatus and its mfg. method, and electronic apparatus |
| CN1526850A (en) * | 2003-03-07 | 2004-09-08 | ������������ʽ���� | Mask and producing process thereof, mask producing apparatus and film forming method for luminous material |
| JP2004362908A (en) * | 2003-06-04 | 2004-12-24 | Hitachi Metals Ltd | Metal mask and manufacturing method thereof |
Family Cites Families (19)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH1034237A (en) * | 1996-07-30 | 1998-02-10 | Sumitomo Metal Ind Ltd | Production of cold rolling stainless steel sheet with excellent flatness |
| JP2000319728A (en) * | 1999-05-07 | 2000-11-21 | Sumitomo Metal Ind Ltd | Manufacture of metal sheet for shadow mask |
| JP3573047B2 (en) * | 2000-02-10 | 2004-10-06 | 住友金属工業株式会社 | Manufacturing method of stainless steel sheet with excellent flatness after etching |
| JP2003272839A (en) * | 2002-03-14 | 2003-09-26 | Dainippon Printing Co Ltd | Manufacturing method of masking member for evaporation treatment |
| KR100523430B1 (en) * | 2002-08-23 | 2005-10-25 | 닛꼬 긴조꾸 가꼬 가부시키가이샤 | MILD STEEL STEM AND Fe-Ni ALLOY BASED STEM FOR SHADOW MASK HAVING GOOD SHAPE AFTER ETCHING |
| EP1449596A1 (en) * | 2003-02-24 | 2004-08-25 | Corus Technology BV | A method for processing a steel product, and product produced using said method |
| JP4463492B2 (en) * | 2003-04-10 | 2010-05-19 | 株式会社半導体エネルギー研究所 | Manufacturing equipment |
| JP2005042147A (en) * | 2003-07-25 | 2005-02-17 | Dainippon Screen Mfg Co Ltd | Method of producing mask for vapor deposition, and mask for vapor deposition |
| JP2005105406A (en) * | 2003-09-10 | 2005-04-21 | Nippon Seiki Co Ltd | Mask for vapor deposition |
| JP5151004B2 (en) * | 2004-12-09 | 2013-02-27 | 大日本印刷株式会社 | Metal mask unit and manufacturing method thereof |
| JP2006247721A (en) * | 2005-03-11 | 2006-09-21 | Jfe Steel Kk | Method and apparatus for straightening shape of metallic sheet using roll having uneven cross-sectional shape for pinching metallic sheet |
| KR100763538B1 (en) * | 2006-08-29 | 2007-10-05 | 삼성전자주식회사 | Method of forming mask pattern and method of forming fine pattern using the same in a semiconductor device fabricating |
| CN200989993Y (en) * | 2006-12-22 | 2007-12-12 | 上海集成电路研发中心有限公司 | Long mask plate for double-exposure |
| KR100796617B1 (en) | 2006-12-27 | 2008-01-22 | 삼성에스디아이 주식회사 | Mask device and manufacturing thereof and organic light emitting display device comprising the same |
| JP4985227B2 (en) * | 2007-08-24 | 2012-07-25 | 大日本印刷株式会社 | Vapor deposition mask, vapor deposition mask device, vapor deposition mask manufacturing method, vapor deposition mask device production method, and vapor deposition mask sheet-like member production method |
| JP5262226B2 (en) * | 2007-08-24 | 2013-08-14 | 大日本印刷株式会社 | Vapor deposition mask and method of manufacturing vapor deposition mask |
| JP5486951B2 (en) * | 2010-02-12 | 2014-05-07 | 株式会社アルバック | Vapor deposition mask, vapor deposition apparatus, and thin film formation method |
| WO2011122608A1 (en) * | 2010-03-30 | 2011-10-06 | Hoya株式会社 | Method for manufacturing substrate for photomask blank, method for manufacturing photomask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device |
| KR101693578B1 (en) * | 2011-03-24 | 2017-01-10 | 삼성디스플레이 주식회사 | Vapor deposition mask |
-
2013
- 2013-07-24 JP JP2013153920A patent/JP5382257B1/en active Active
-
2014
- 2014-01-10 CN CN201911326369.0A patent/CN110938798A/en active Pending
- 2014-01-10 KR KR1020157009821A patent/KR101761494B1/en active IP Right Grant
- 2014-01-10 CN CN201480003438.3A patent/CN104838037B/en active Active
- 2014-01-10 WO PCT/JP2014/050346 patent/WO2014109394A1/en active Application Filing
- 2014-01-10 CN CN201711267436.7A patent/CN107858644A/en active Pending
- 2014-01-10 CN CN201711267429.7A patent/CN108048793B/en active Active
- 2014-01-10 KR KR1020177020095A patent/KR102087056B1/en active IP Right Review Request
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1316016A (en) * | 1999-05-07 | 2001-10-03 | 松下电子工业株式会社 | Stainless steel plate for shadow mask and method for production thereof and shadow mask |
| CN1295334A (en) * | 1999-10-29 | 2001-05-16 | 大日本印刷株式会社 | Shadow mask for colour CRT |
| CN1514675A (en) * | 2001-09-25 | 2004-07-21 | 精工爱普生株式会社 | Mask and its mfg. method, electroluminescent apparatus and its mfg. method, and electronic apparatus |
| JP2004039319A (en) * | 2002-07-01 | 2004-02-05 | Hitachi Metals Ltd | Metal mask |
| JP2004185890A (en) * | 2002-12-02 | 2004-07-02 | Hitachi Metals Ltd | Metal mask |
| CN1526850A (en) * | 2003-03-07 | 2004-09-08 | ������������ʽ���� | Mask and producing process thereof, mask producing apparatus and film forming method for luminous material |
| JP2004362908A (en) * | 2003-06-04 | 2004-12-24 | Hitachi Metals Ltd | Metal mask and manufacturing method thereof |
Non-Patent Citations (1)
| Title |
|---|
| 阳兆祥: "《交通事故力学鉴定教程》", 31 October 2002 * |
Cited By (17)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI713899B (en) * | 2016-04-14 | 2020-12-21 | 日商凸版印刷股份有限公司 | Base material for vapor deposition mask, method of manufacturing base material for vapor deposition mask, and method of manufacturing vapor deposition mask |
| TWI639720B (en) * | 2016-04-14 | 2018-11-01 | 日商凸版印刷股份有限公司 | Substrate for vapor deposition mask, method for producing substrate for vapor deposition mask, and method for producing vapor deposition mask |
| US11207705B2 (en) | 2016-09-12 | 2021-12-28 | Samsung Display Co., Ltd. | Mask and method of manufacturing mask assembly including the same |
| CN107815640B (en) * | 2016-09-12 | 2021-08-31 | 三星显示有限公司 | Mask and method of manufacturing mask assembly including the same |
| CN107815640A (en) * | 2016-09-12 | 2018-03-20 | 三星显示有限公司 | Mask and manufacture include the method for the mask assembly of mask |
| CN109689921A (en) * | 2016-09-14 | 2019-04-26 | 夏普株式会社 | The manufacturing method of mask sheet, deposition mask, display panel |
| CN114435754A (en) * | 2016-09-29 | 2022-05-06 | 大日本印刷株式会社 | Vapor deposition mask package, vapor deposition mask packaging method, and vapor deposition mask manufacturing method |
| US12109778B2 (en) | 2016-09-29 | 2024-10-08 | Dai Nippon Printing Co., Ltd. | Deposition mask package and deposition mask packaging method |
| CN107916396B (en) * | 2016-10-07 | 2020-07-07 | 大日本印刷株式会社 | Method for manufacturing vapor deposition mask, intermediate product, and vapor deposition mask |
| CN107916396A (en) * | 2016-10-07 | 2018-04-17 | 大日本印刷株式会社 | Manufacture method, intermediate products and the deposition mask of deposition mask |
| US11313026B2 (en) | 2016-10-07 | 2022-04-26 | Dai Nippon Printing Co., Ltd. | Method of manufacturing deposition mask, intermediate product to which deposition mask is allocated, and deposition mask |
| TWI778977B (en) * | 2016-10-07 | 2022-10-01 | 日商大日本印刷股份有限公司 | Manufacturing method of vapor deposition mask, intermediate product to which vapor deposition mask is added, and vapor deposition mask |
| TWI783447B (en) * | 2016-10-07 | 2022-11-11 | 日商大日本印刷股份有限公司 | Manufacturing method of vapor deposition mask, divided intermediate product with vapor deposition mask attached, and vapor deposition mask |
| US11814719B2 (en) | 2016-10-07 | 2023-11-14 | Dai Nippon Printing Co., Ltd. | Method of manufacturing deposition mask, intermediate product to which deposition mask is allocated, and deposition mask |
| CN108070823A (en) * | 2016-11-18 | 2018-05-25 | 大日本印刷株式会社 | Deposition mask |
| CN108070823B (en) * | 2016-11-18 | 2023-05-23 | 大日本印刷株式会社 | Vapor deposition mask |
| CN111500980A (en) * | 2017-01-10 | 2020-08-07 | 大日本印刷株式会社 | Vapor deposition mask and method for manufacturing vapor deposition mask |
Also Published As
| Publication number | Publication date |
|---|---|
| KR102087056B1 (en) | 2020-03-10 |
| JP5382257B1 (en) | 2014-01-08 |
| KR102087056B9 (en) | 2022-08-02 |
| CN107858644A (en) | 2018-03-30 |
| KR20170087533A (en) | 2017-07-28 |
| CN104838037B (en) | 2017-11-21 |
| JP2014148740A (en) | 2014-08-21 |
| WO2014109394A1 (en) | 2014-07-17 |
| CN108048793A (en) | 2018-05-18 |
| KR20150103655A (en) | 2015-09-11 |
| KR101761494B1 (en) | 2017-07-25 |
| CN110938798A (en) | 2020-03-31 |
| CN108048793B (en) | 2020-11-03 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104838037A (en) | Metal plate, metal plate production method, and method for producing vapor deposition mask using metal plate | |
| CN104854254A (en) | Metal plate, metal plate production method, and method for producing vapor deposition mask using metal plate | |
| JP5516816B1 (en) | Metal plate, method for producing metal plate, and method for producing vapor deposition mask using metal plate | |
| CN105492654A (en) | Metal plate, metal plate manufacturing method, and method for manufacturing mask using metal plate | |
| CN207498456U (en) | Deposition mask | |
| TW201742935A (en) | Vapor deposition mask base material, vapor deposition mask base material manufacturing method, and vapor deposition mask manufacturing method | |
| JP5730241B2 (en) | Manufacturing method of cover glass for electronic device and glass substrate holder for cover glass for electronic device | |
| JP6515520B2 (en) | Method of manufacturing vapor deposition mask, metal plate used for producing vapor deposition mask, and vapor deposition mask | |
| WO2020217936A1 (en) | Method for manufacturing glass sheet, and glass sheet and glass sheet assembly | |
| JP2017197797A (en) | Production method of vapor deposition mask | |
| JP2019044198A (en) | Vapor deposition mask | |
| JP5825139B2 (en) | Manufacturing method of vapor deposition mask | |
| JP6425135B2 (en) | Method of manufacturing vapor deposition mask | |
| US12128500B2 (en) | Manufacturing method for vapor deposition mask device and manufacturing apparatus for vapor deposition mask device | |
| JP2018080377A (en) | Vapor deposition mask, and production method of vapor deposition mask | |
| US20210060700A1 (en) | Manufacturing method for vapor deposition mask device and manufacturing apparatus for vapor deposition mask device | |
| JP2020180344A (en) | Method for manufacturing vapor deposition mask device and vapor deposition mask | |
| JP2016006237A (en) | Manufacturing method of vapor deposition mask |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant |