CN107836036A - 使用芯片嵌入技术的开口腔封装 - Google Patents
使用芯片嵌入技术的开口腔封装 Download PDFInfo
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- CN107836036A CN107836036A CN201680040930.7A CN201680040930A CN107836036A CN 107836036 A CN107836036 A CN 107836036A CN 201680040930 A CN201680040930 A CN 201680040930A CN 107836036 A CN107836036 A CN 107836036A
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- sensing system
- adhesive tape
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Abstract
在所描述的用于以面板形式制造具有开口腔(110a)的封装的半导体器件的方法的示例中,此方法包括:将具有平坦焊盘(230)的金属块的面板大小的网格和对称放置的垂直柱体(231)放置在粘合承载胶带上;将半导体芯片(101)附加到胶带上,其中传感器系统面朝下;层压并减薄低CTE绝缘材料以填充芯片和网格之间的间隙;翻转组件以移除胶带;等离子‑清洗组件正面,穿过组件溅射和图案化均匀的金属层,并可选择地电镀金属层以形成针对组件的重布迹线和延伸接触焊盘;穿过面板层压(212)绝缘增强板;在增强板中使腔开口(213)以进入传感器系统;并通过切割金属块来切单(214)封装器件。
Description
技术领域
本申请总体涉及半导体器件和工艺,并且更具体的涉及半导体开口腔封装的结构和制造方法。
背景技术
在传统的技术中,使用开口腔模塑封装以暴露半导体芯片上的感测区来制造半导体湿度传感器。在现存技术中,开口腔封装需要薄膜辅助的模塑设备,其是专用于每个封装设计的精密机械加工的昂贵包封模型。因此,每次将引进具有新形状因子的封装时,需要承受一连串使用工具的高昂费用。
各种各样的产品统称为微机电系统(MEMS),其为小的轻量型器件(在微米至毫米尺度),其可具有机械移动部分和经常可移动的电源和控件,或他们可具有对湿度或对热、声或光能敏感的部件。MEMS已经发展到感测环境的、机械的、热的、化学的、辐射的、磁的和生物的量及输入,并产生信号作为输出。由于移动和敏感部件,MEMS受益于物理和大气的保护。因此,MEMS被放置在衬底上并被外壳和封装包围,以保护MEMS免受周围环境和电干扰以及应力的影响。
一个示例MEMS将机械元件、传感器、致动器和电子装置集成在共同的衬底上。一个示例MEMS制造方法使用批量制造技术,类似于用于微电子器件的那些技术。MEMS可以从大规模生产和最小化材料消耗中获益,以降低制造成本,同时试图开发一种控制良好的集成电路技术。
顺应小型化、集成化和降低成本的技术趋势,衬底、板和工艺最近已被开发以嵌入和互连接芯片和封装,为了减小板空间、厚度和占用面积(footprint),同时增强电力管理、电气性能和应用领域。示例包括:集成板渗透到汽车市场、无线产品和工业应用中。MEMS器件的一个示例(如红外辐射传感器嵌入在小型化板中作为一个更大的集成系统的一部分)最近已经在2014年10月21日发布的美国专利No.8,866,237中描述(Manack等,“Methodsfor Embedding Controlled-Cavity MEMS Package in Integrated Board(用于在集成板中嵌入受控腔MEMS封装的方法)”)。
一般来说,半导体器件的有源和无源元件是在由半导体元素(如硅)或化合物(如氮化镓)的细长圆柱形单晶体切片的圆晶片中制造的。从圆晶片中,通常通过切割以x-方向和y-方向穿过晶片的槽以从晶片建造矩形离散片(通常称为管芯或芯片),单个的器件被切单(singulate)。在处理后,每个芯片包括至少一个与各自的金属接触焊盘耦合的器件,其范围达具有多于一百万个有源和无源元件的集成电路。
切单后,一个或更多个芯片被附加至离散的支撑衬底(如金属引线框架)或从金属或绝缘层层压的刚性多层衬底。引线框架和衬底的导电迹线然后连接到芯片接触焊盘,通常使用键合线或金属凹块(如焊球)。为了防止环境和处理危害,组装的芯片可以被包装在离散的强健封装中,其经常使用硬化的聚合化合物,并通过如转移模塑的技术形成。组装和封装过程通常以单个基础或小分组执行,如引线框架的条带或铸模冲压的负载。
为了建造封装结构,最近已经研究一些过程以通过使用大型面板增加由每个封装过程处理的体积。该方法试图避免面板翘曲、机械不稳定性和昂贵的激光操作,同时实现低电阻连接和改善的热特性。对于金属种子层,通过溅射技术和等离子清洗的且冷却的面板实现了贯穿所选面板尺寸层的均匀性,其产生了贯穿面板的均匀溅射的金属层,并因此避免了对于无电镀的需求。建议的方法使用粘合胶带代替环氧树脂芯片附加程序,并且不需要使用激光。此外,封装的器件提供改善的可靠性,因为通过层压间隙与具有高模量和针对热膨胀系数的玻璃转化温度的绝缘填充物达到降低的热机械应力,该热膨胀系数接近硅的系数。
发明内容
在所描述的用于以面板形式制造具有开口腔的封装的半导体器件的方法的示例中,此方法包括:将具有平坦焊盘的金属块(piece)的面板大小的网格和对称放置的垂直柱体放置在粘合承载胶带上。将具有传感器系统或MEMS的半导体芯片面朝下地放置在胶带上。下一个过程涉及层压、固化和减薄低CTE材料绝缘材料以填充芯片和网格之间的间隙。然后,翻转组件以移除承载胶带。现在暴露的组件正面被等离子清洗,贯穿组件溅射和图案化均匀的金属层以形成针对组件的重布迹线(trace)和延伸的接触焊盘;可选择的,可电镀金属层。然后,贯穿面板层压绝缘增强板;在增强板中将腔开口以进入传感器系统或MEMS。并通过将金属块切割成两半把封装的器件切单。
附图说明
图1说明了具有芯片的半导体器件的透视图,该芯片具有传感器系统或微机电系统(MEMS),其嵌入在具有开口以进入该系统的封装中。
图2A描述制造流程的某些过程,其将具有传感器系统或MEMS的半导体芯片嵌入到具有用于进入该系统的腔的包封的封装中。
图2B示出了在图2A中开始的制造流程的附加过程,其将具有传感器系统的芯片嵌入封装中。
图2C显示了在图2A中开始的制造流程的附加过程,其将具有传感器系统的芯片嵌入封装中。
图3A描述另一个制造流程的某些过程,其将具有传感器系统或MEMS的半导体芯片嵌入到具有用于进入该系统的腔的包封的封装中。
图3B显示了在图3A中开始的制造流程的附加过程,其将具有传感器系统的芯片嵌入封装中。
图3C示出在图3A中开始的制造流程的附加过程,其将具有传感器系统的芯片嵌入封装中。
具体实施方式
对于使用腔模塑过程制造特定器件封装的半导体器件封装的改变是费时且昂贵的,因为它们涉及昂贵的精密模具。在半导体技术中,当能够开发制造工艺流程时,可以避免零部件(如预制造的封装)而不牺牲封装功能,使得封装随着芯片的嵌入程序逐步发展。这样的通用嵌入封装过程对于涉及传感器系统和微机电系统(MEMS)的半导体器件是特别受欢迎的,因为MEMS器件一般被设计为对于多种应用是可调的。
传感器或MEMS在集成板中的沉埋位置工作,集成会需要允许要被监控的物理实体不受阻碍的进入传感器或MEMS。集成板应该留出一个窗口,用于光、声、气和水分传输通过。在湿度传感器示例中,大气会需要不受阻碍的进入位于腔内的湿度传感器,因此该腔必须有针对环境的可控制的开口。
图1说明了具有带有端子102的半导体芯片101的总体设计的半导体器件100的示例实施例。芯片101嵌入封装中,其已被制造为在覆盖芯片表面101b的保护绝缘增强板110中有开口或腔110。如下面详细说明,同时芯片将被嵌入在合适于执行面板形式的序列过程的过程流程中。
如此处所定义的,所述的面板指的是外壳或封装,其具有将半导体芯片嵌入新兴封装内的组合以产生一个集成的器件,并进一步暗示了大的横向尺寸,适合于执行过程步骤作为批量过程,因此,与传统的制造技术相比,允许大幅地降低制造成本。在示例器件中,将开口腔面板制造的封装与标准的塑料模制腔封装进行比较。作为面板的示例,面板可以具有正方形或长方形形状,并达到“20”乘“20”至“28”乘“28”的尺寸,或更大;面板可适用于连接半导体全部晶片(如“12”直径的四个晶片)或半导体芯片。
半导体芯片101具有第一高度101a、侧壁101d和第一表面101b,其包括具有金属化端子102的MEMS 103。芯片101进一步具有第二表面101c,其平行于第一表面101b,以及侧壁104。
MEMS可以从包括环境的、机械的、热的、化学的、辐射的、磁的和生物的量和输入的传感器的组中选择。如一个示例,MEMS可以是湿度传感器。在其他的器件中,MEMS可包括如可见或红外光的电磁辐射的传感器,或需要隔膜(membrane)的传感器。一个合适作为一个湿度传感器MEMS的示例芯片可以是具有边长大约2mm的正方形;示例器件100的占用面积可以是2.33×2.28mm(与传统模制器件的3.0mm相比)。器件100的封装的总高度111为0.29mm(与传统模制器件的0.75mm相比)。
如图1示出,芯片101由容器120包围和包封,其由柔性(compliant)绝缘聚合物材料制成。选择基材和填充物,以使其具有接近半导体芯片的系数的热膨胀系数。容器120的聚合材料覆盖和粘附到芯片101b的第二表面(底表面)101c和侧壁101d。容器120具有平面的顶表面120b(称为第三表面)和平行的底表面120c(称为第四表面)。第三表面120b与第一表面101b共面。
图1进一步说明了金属焊盘130插入绝缘聚合材料120中。焊盘130具有外表面130a,其与第四表面120c共面。此外,外焊盘表面130a可优选地具有适合焊接的冶金合成物。在里面,焊盘130具有如柱体、立方体或六面体131的垂直实体。柱体或六面体具有平行于外表面130a的表面131a。柱体的表面增强了对容器120的聚合材料的粘附。柱体131的表面131a与导电重布迹线140接触,其将焊盘130连接至芯片101和MEMS 103的各自的端子102。
图1示出了芯片101的第一表面101b,容器的共面顶(第三)表面120b和重布迹线140由绝缘增强板的平坦层110保护,绝缘增强板优选地由如焊料掩膜的材料制成。层110留出开口腔110a使得MEMS被暴露给待感测的实体。例如,建造腔110a以允许MEMS暴露于器件的湿度中,其中MEMS包括湿度传感器。在其他器件中,MEMS可从包括环境的、机械的、热的、化学的、辐射的、磁的和生物的量和输入的传感器的组中选择。
另一个实施例是一种用于以面板形式制造具有嵌入式半导体芯片的开口腔封装的方法。图2A、2B和2C说明了这个制造方法中的过程流程。另一个方法在图3A、3B和3C的过程流程中描述。
图2A、2B和2C的方法由提供半导体芯片101开始,半导体芯片101具有第一高度101a和第一表面101b。第一表面101b包括MEMS 103和端子102。
另外,还提供金属块,其优选地由铜制造。这些块被成形使得它们有平坦焊盘和一个或更多个垂直实体131(如相对于焊盘中心对称放置的柱体或六面体)。焊盘中心本身需要远离垂直实体,因为在后来的过程中(见下面过程214,封装切单)该块将被切割成所指定的两半部分130。每半部分必须保留垂直实体,并在此处称为构件。在切单后,图1的器件的示例构件包括位于焊盘130中心的柱体131;在其他构件中,如图2A的示例器件,六面体231位于焊盘230的周界。构件的外表面130a,即和柱体相反的表面,优选是可焊的。构件的高度,包括厚度焊盘230和六面体231的高度,被称为第二高度;其大于第一高度101a。
在过程201(见图2A)中,提供粘合胶带200,并且使用至少一些金属块在胶带上形成金属网格。这些块与其柱体231按有序的行和列放置在粘合承载胶带200上以形成规则的网格。完成的网格覆盖胶带的整个区域;这些块由开口232隔开,开口被设定大小以容纳半导体芯片。
不放置个体金属块,使用替代方法建立金属块的网格可以更实用。一种用于制造网格的方法是提供金属薄片(sheet)的窗口框架,其可具有一个可焊的表面,并且然后通过冲压和刻蚀形成具有焊盘和柱体的块的阵列。
在下一个过程202中,芯片101放置在两个相邻的金属块之间的相应开口232内部,使得具有MEMS和端子的芯片的第一表面101b面朝下,并被粘附到胶带200的黏性表面。在芯片附接之后,芯片由金属块加框,同时芯片侧壁通过间隙233与相邻的侧壁或金属块的六面体隔开。
在下一个过程203中,柔性绝缘聚合物234被层压,在真空抽吸下,黏合地填充芯片和片侧壁之间的间隙233,并且覆盖背对胶带的芯片表面101c。选择聚合化合物234,其具有接近半导体芯片的CTE的热膨胀系数(CTE)。对于许多化合物,柔性材料在提高的温度下被固化。结果,每个芯片嵌入由金属和聚合部分交替组合的混合容器中。
在过程204中,聚合化合物234被均匀减薄,直到暴露金属块的可焊表面130a。因为,如以上所述,金属块的第二高度大于芯片的第一高度,减薄的过程留下由层压材料覆盖的芯片的后部表面101c。材料的表面120c具有与金属块的可焊表面130a共面的表面。减薄的移除过程从包括磨或拉平、和等离子减薄过程的组中选择。聚合化合物234作为芯片101的容器120工作。
在过程205中,具有交替的金属和聚合部分以及嵌入式芯片的混合面板被翻转,使得粘合胶带200面朝上并且可被移除;具有芯片端子102和MEMS103的芯片表面101b,以及块柱体231现在被暴露用于进一步的处理。
对于过程206,面板被转移到溅射设备的真空和等离子室。新的面板表面被等离子清洗,同时冷却面板,优选地在环境温度以下。除了清洗表面去除吸收的薄膜、特别地水单层,等离子完成表面的一些粗化;二者的效果都增强溅射的金属层的粘附力。然后,以均匀的能量和速率,并且在冷却面板时,至少一个金属层240被溅射到暴露的芯片、金属柱体和层压表面上。溅射层240通过带电原子粘附到多个表面,带电原子穿透多种材料的顶表面。至少一个溅射层的金属优选地是耐火金属;金属可以从包括钛、钨、钽、锆、铬、钼及其合金的组中选择。优选地,没有延迟地溅射附加的第二层。第二层的金属从包括铜、银、金及其合金的组中选择;第二层粘附到第一层。溅射层具有均匀性、强黏合性和在图案化后充当用于重布线的导电迹线所需的低电阻;溅射层也可以充当用于接下来过程中的电镀的更厚金属层的种子金属。
开始针对重布迹线的图案化过程,光刻胶薄膜250贯穿完整的面板沉积在金属种子层上(见图2B中的过程207)。在图2B的过程208中,光刻胶薄膜被图案化和显影以定义光刻胶薄膜中的窗口,用于建造将芯片端子102连接至各自的块231的重布迹线的网络。在光刻胶显影过程中,薄膜部分被保存,其在被选择以覆盖相应MEMS 103上的种子金属的区域上延伸。
在过程209中,第二金属层241在开口的网络窗口中被电镀到第一种子金属上;优选的金属为铜,其他部分包括银、金及其合金。优选地,电镀层241比种子层240厚。在下一个过程210中,光刻胶薄膜241被剥离,并在过程211中,下面的种子层240从新开口的区域被移除。因此,暴露半导体芯片的MEMS 103(在示例器件中,湿度传感器)。现在MEMS和芯片端子102通过重布层140被连接到金属块230的柱体231。
在下一个过程212中,保护绝缘增强板层110被层压在包括具有MEMS的芯片的表面的完整网格区域上方。优选的材料为绝缘体,例如所谓的焊接停止(stop)材料。在下一个过程213中,腔110a在增强板层中被开口以暴露每个芯片的MEMS,同时留下每个芯片表面的剩余部分上的增强板层110未开口。因此,未开口的层110连同容器120一起封装芯片101,其因此嵌入在封装中,同时在层110中的腔暴露MEMS。
在最后的过程214中,通过将金属块切割成相等且对称的两半,将具有金属块的增强板保护的混合金属/聚合物面板沿着线290切块来切单分立器件。这些半有时称为构件。每个分立器件包括芯片和金属块半或构件,作为端子嵌入混合金属/增强板衬底中。具有腔的增强板、绝缘聚合物的容器和嵌入的端子操作为用于具有MEMS的芯片的封装;封装包括在保护增强板中用于操作MEMS的窗口,如作为传感器操作的MEMS。
有利地,用于将具有MEMS的芯片嵌入封装中的过程流程也附带地建造用于进入MEMS的腔。此外,芯片嵌入技术允许巨大尺度变换(scaling)的封装和腔。例如,具有形成为湿度传感器的MEMS的器件可展示仅2.33×2.28mm的占用面积,取代在常规模制封装中湿度传感器所需的3.0×3.0mm。另外,过程流程允许封装厚度从0.75mm至0.29mm的减小。
另一个实施例是用于以面板形式制造具有嵌入式半导体芯片的开口腔封装的方法。这个制造方法的某些过程在图3A、3B和3C中说明。此方法由提供半导体芯片101开始,其具有第一高度101a和第一表面101b。第一表面101b包括MEMS 103和端子102。在过程301中,提供粘合承载胶带300,并且将芯片放置在胶带300上,其中MEMS和端子面朝下,使得以有序的行和列放置芯片以形成规则的网格并由开口332隔开芯片,开口332被设置尺寸以容纳金属块(见下文)。完成的网格覆盖胶带的整个区域。
此外,提供金属块330,其优先地由铜制成。这些块被成形以具有平坦焊盘,一个或更多个垂直实体331(如相对于焊盘中心对称放置的柱体或六面体),以及对称地位于这些块的两端部的突出物333。焊盘中心本身需要远离垂直实体,因为在之后的过程中(见下面的过程314,封装切单),块将被切割成两个半部分,其可以是镜像和对称的,且有时被称为构件。每个半部分必须保留垂直实体和焊盘,并且在此处被称为构件。在切单后,图3A的器件的示例构件包括位于焊盘130的中心的柱体331;在其他构件中,例如图2A的示例器件,六面体231位于焊盘230的周界;构件的外表面330a,即,和柱体相对的表面,优选地是可焊的。构件的高度,包括焊盘的厚度、焊盘和柱体的高度,也称为第二高度;其大于第一高度101a。
不放置个体金属块,使用替代方法建造金属块的网格可以更实用。一种用于制造网格的方法是提供金属薄片的窗口框架,其可具有一个可焊的表面,并且然后通过冲压和刻蚀形成具有焊盘和柱体的块的阵列。
在下一个过程302中,金属块330放置在两个相邻的半导体芯片之间的每个相应开口332内,使得柱体331放置在粘合承载胶带300上,在块的侧壁和芯片之间留下间隙,并且块的细长的突出物333延伸穿过间隙至邻近芯片,并停留在邻近芯片长度的部分上。将金属块附接到胶带后,芯片101被金属块加框架,同时芯片侧壁通过间隙334与金属块的相邻的侧壁(柱体或六面体)隔开。
在下一个过程303中,柔性绝缘聚合物335被层压,在真空抽吸下,黏合地填充芯片和金属块侧壁之间的间隙334,并且覆盖背对胶带的芯片表面101c。聚合化合物335对应于图2A的材料234,并且其被选择具有接近半导体芯片的CTE的热膨胀系数(CTE)。对于许多化合物,柔性材料在提高的温度下被固化。结果,每个芯片嵌入由金属和聚合部分交替组合的混合容器中。
对于类似的示例实施例,接下来的过程在内容和顺序上紧随上面描述的流程的过程。在过程303中对柔性聚合物层压后,下一个过程304涉及均匀地移除(如通过背磨和等离子减薄)层压材料335,直到金属块的可焊表面330a被暴露,同时留下芯片的后部表面101c被层压材料覆盖。通过移除过程,在表面101c上方剩余的层压材料获得与金属块的表面330a共面的表面335a。
在下一个过程305中,将具有嵌入式芯片的混合金属/聚合物面板翻转,使得粘合承载胶带300面朝上并因此能容易地被移除,暴露芯片的表面、金属柱体和层压聚合物。然后,在过程306中,以均匀的能量和速率并且在冷却面板时,第一金属的至少一个种子层340被溅射到芯片、金属块和层压表面上。如上所指出的,溅射层的优选金属是一种耐火金属,其相等强度地粘附至暴露的不同材料。优选地,没有延迟地溅射附加的金属层(优选铜)。
在随后的过程307和308中,在种子层上沉积、图案化和显影光刻胶薄膜350,以定义针对将芯片端子102连接到金属块的柱体331的重布迹线的网络的窗口,同时保持薄膜部分在被选择用于覆盖MEMS 103上的种子金属的区域上延伸。
在过程309中,第二金属层341在开口的窗口中被电镀到第一种子金属340上,完成重布金属化。在过程310中,光刻胶薄膜350被剥离,并且在过程311中,暴露的种子金属340被移除。在此过程之后,MEMS 103被暴露。
在过程312中,保护绝缘增强板层110在包括芯片的表面的整个网格区域上。在过程313中,腔110a在增强板层中开口,以暴露每个芯片的MEMS,同时留下在每个芯片的表面的剩余部分上的增强板层未开口。
最后,在过程314中,增强板保护的混合金属/聚合物面板沿线390被切块以切单分立器件,每个器件包括嵌入在混合金属/增强板衬底(金属331、聚合物335、增强板110)中的芯片101,混合金属/增强板衬底作为封装并且包括用于MEMS的保护增强板中的窗口(110a),相对于MEMS的器件侧具有可焊端子330。
示例实施例应用于使用任何类型的半导体芯片、分立或集成电路的产品,并且半导体芯片的材料可以包括在集成电路制造中所使用的硅、硅锗、砷化镓、氮化镓或任何其他半导体或化合物材料。
如另一个示例,示例实施例应用于作为湿度传感器的MEMS,并进一步应用于具有在能量流(声的、热的或光的)、温度或电压差、或者外力或扭矩的影响下机械运动的部件的MEMS。具有隔膜、板或梁的某些MEMS作为压力传感器(如麦克风和扬声器)、惯性传感器(如加速度计)、或电容传感器(如应变规和RF开关)是有用的;其他的MEMS作为针对位移或倾斜的运动传感器操作;双金属隔膜作为温度传感器运作。
在所描述的实施例中,修改是可能的,并且在权利要求范围内,其他实施例是可能的。
Claims (16)
1.一种用于制造封装的半导体器件的方法,其包含:
提供具有第一高度和包括传感器系统和端子的第一表面的半导体芯片;
提供包括平坦焊盘的金属块,所述平坦焊盘具有在所述焊盘上相对于所述焊盘中心对称放置的垂直柱体,柱体和焊盘具有大于所述第一高度的第二高度,与所述柱体相对的所述焊盘表面是可焊的;
将所述块的所述柱体放置在粘合承载胶带上,以在一区域上以有序的行和列形成块的网格,由开口将所述块隔开,该开口被设定大小以容纳半导体芯片;
将芯片放置在每个开口内部,所述芯片具有面朝下的所述传感器系统和所述端子以及通过间隙与邻近的块侧壁隔开的侧壁;
在真空抽吸下,层压柔性绝缘聚合物以黏合地填充芯片和块侧壁之间的所述间隙,并覆盖背对所述胶带的所述芯片表面,从而将每个芯片嵌入具有平面表面的混合金属/聚合物容器中,所述材料具有接近所述半导体芯片的系数的热膨胀系数;
均匀地移除层压材料,直到所述块的所述可焊表面被暴露,而所述芯片的后表面保持被具有与可焊块的所述表面共面的表面的层压材料覆盖;
翻转具有嵌入式芯片的所述混合金属/聚合物面板使得所述粘合胶带面朝上用于移除所述胶带;
以均匀的能量和速率溅射,并且当所述面板冷却时,至少一个第一金属的种子层粘附至芯片、块和层压材料的所述表面;
在所述种子层上沉积、图案化和显影光刻胶薄膜以针对将芯片端子连接至各自的块的重布迹线的网络定义窗口,同时保护在被选择用于覆盖在所述传感器系统上的种子金属的区域上延伸的薄膜部分;
在所开口的网络窗口中将第二金属层电镀在所述第一种子金属上;
剥离所述光刻胶薄膜并移除下层的种子金属;
在包括所述芯片的所述表面的完整的网格区域上层压绝缘增强板保护层;以及
在增强板层中使腔开口以暴露每个芯片的所述传感器系统,同时留下每个芯片的所述表面的剩余部分上的所述增强板层未开口。
2.根据权利要求1所述的方法,进一步包括通过将金属块切割成相等且对称的两半将所述增强板保护的混合金属/聚合物面板和所述金属块切块来切单分立器件的工艺每个器件包括芯片和作为端子嵌入混合金属/增强板衬底的金属块,所述混合金属/增强板衬底作为封装操作并且包括在保护增强板中的窗口用于操作所述传感器系统。
3.根据权利要求1所述的方法,进一步包括,在所述层压过程后,固化所述柔性材料的过程。
4.根据权利要求1所述的方法,其中所述移除过程从包括研磨和等离子减薄过程的组中选择。
5.根据权利要求1所述的方法,进一步包括,在所述溅射过程之前,针对溅射的金属,芯片的所暴露的表面、层压材料和金属构件在设备中等离子清洗的过程。
6.根据权利要求1所述的方法,其中所述溅射的步骤包括溅射金属的第一层,该金属从包括钛、钨、钽、锆、铬、钼及其合金的组中选择,所述第一层粘附至芯片和层压表面;并且没有延迟在所述第一层上溅射金属的至少一个第二层,该金属从包括铜、银、金及其合金的组中选择,所述第二层粘附至所述第一层。
7.根据权利要求1所述的方法,其中所述芯片的所述传感器系统和所述端子由绝缘惰性聚合物的涂层覆盖,所述涂层具有暴露所述传感器系统端子的开口。
8.根据权利要求1所述的方法,其中所述传感器系统从包括针对湿度、温度、压力、化学、磁和生物检测的环境传感器的组中选择。
9.根据权利要求1所述的方法,其中所述传感器系统从包括微机电系统即MEMS环境的、机械的、热的、化学的、辐射的、磁的和生物的量和输入的组中选择。
10.一种用于制造封装的半导体器件的方法,其包含:
提供具有第一高度和包括传感器系统和端子的第一表面的多个半导体芯片;
将所述芯片放置在粘合承载胶带上,其中传感器系统和端子面朝下,并以通过开口隔开的有序的行和列排列所述芯片;
将金属块的网格放置在所述胶带上,所述块具有大于所述第一高度的第二高度,并且被设置大小以适应在所述芯片的所述行和列之间的开口中,同时留下所述块的所述侧壁和所述芯片之间的间隙,所述块进一步具有延伸穿过所述间隙停留在邻近芯片长度的部分上的细长突出物;
在真空抽吸下,层压柔性绝缘聚合物以黏合地填充芯片和块侧壁之间的所述间隙,并覆盖背对所述胶带的所述芯片表面,从而将每个芯片嵌入具有平面表面的混合金属/聚合物面板中,所述材料具有接近所述半导体芯片的系数的热膨胀系数;
均匀地移除层压材料,直到暴露所述块的所述可焊表面,而所述芯片的所述后表面保持被具有与所述可焊块表面共面的表面的层压材料覆盖;
翻转具有嵌入式芯片的所述混合金属/聚合物面板使得所述粘合胶带面朝上用于移除所述胶带;
以均匀的能量和速率溅射,并且当所述面板冷却时,至少一个第一金属的种子层粘附至芯片、块和层压表面;
在所述种子层上沉积、图案化和显影光刻胶薄膜以针对将芯片连接至构件的重布迹线的网络定义窗口,同时保护在被选择用于覆盖在所述传感器系统上的种子金属的区域上延伸的薄膜部分;
在所开口的窗口中将第二金属层电镀在所述第一种子金属上;
剥离所述光刻胶薄膜并移除所暴露的种子金属;
在包括所述芯片的所述表面的完整的网格区域上层压绝缘增强板保护层;以及
在增强板层中使腔开口以暴露每个芯片的所述传感器系统,同时留下每个芯片的所述表面的剩余部分上的所述增强板层未开口。
11.根据权利要求10所述的方法,进一步包括将所述增强板保护的混合金属/聚合物面板切块来切单分立器件的过程,每个器件包括嵌入混合金属/增强板衬底中的芯片,所述混合金属/增强板衬底起到封装的作用,并且包括针对所述传感器系统的在所述保护增强板中的窗口,与所述传感器相对的所述器件侧面具有可焊端子。
12.根据权利要求10所述的方法,进一步包括,在所述溅射过程前,针对溅射的金属,芯片的暴露表面、层压材料和金属块在设备中等离子清洗的过程。
13.根据权利要求10所述的方法,其中所述芯片的所述传感器系统和所述端子被绝缘惰性聚合物的涂层覆盖,所述涂层具有开口以暴露所述传感器系统端子。
14.一种用于嵌入式芯片的开口腔封装,其包含:
具有第一表面、平行的第二表面和侧壁的半导体芯片,所述第一表面包括传感器系统和金属化端子;
绝缘聚合材料的容器,其粘附至所述第二表面和所述芯片的所述侧壁,所述容器具有与所述第一表面共面的第三表面和平行于所述第二表面的第四表面;
多个金属焊盘,其沿着所述封装的周界插入所述绝缘聚合材料中,所述焊盘具有适合于焊接并与所述第四表面共面的平坦外部表面,和垂直地位于所述焊盘上并使导电的重布迹线与所述传感器系统端子接触的内部柱体;以及
绝缘增强板的层,其保护所述第一和第三表面和所述重布迹线,同时留下开口腔将所述传感器系统暴露给待感测的实体。
15.根据权利要求14所述的封装,其中所述传感器系统从包括针对湿度、温度、压力、化学、磁和生物检测的环境传感器的组中选择。
16.根据权利要求14所述的封装,其中所述传感器系统从包括微机电系统即MEMS环境的、机械的、热的、化学的、辐射的、磁的、和生物的量和输入的组中选择。
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CN115565890A (zh) * | 2022-12-07 | 2023-01-03 | 西北工业大学 | 一种折叠式多芯片柔性集成封装方法及柔性集成封装芯片 |
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WO2017011252A1 (en) | 2017-01-19 |
US20170015548A1 (en) | 2017-01-19 |
US9663357B2 (en) | 2017-05-30 |
WO2017011252A8 (en) | 2017-08-10 |
CN107836036B (zh) | 2020-12-25 |
JP2018520521A (ja) | 2018-07-26 |
JP6746678B2 (ja) | 2020-08-26 |
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