CN104051399B - 晶圆级芯片尺寸封装中间结构装置和方法 - Google Patents
晶圆级芯片尺寸封装中间结构装置和方法 Download PDFInfo
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Abstract
本发明提供了一种WLCSP中间结构及其形成方法,该方法包括:在载体上形成第一重分布层(RDL),以及在第一RDL的第二侧上安装中介层管芯,第一RDL具有设置在第一RDL上的安装焊盘。在中介层管芯的第二侧上方形成第二RDL,第二RDL具有与中介层管芯相邻的第一侧,设置在第二RDL上的一个或多个接合件,一个或多个接合件中的至少一个与至少一个中介层管芯或至少一个安装焊盘电接触。在形成第二RDL之前,在所述中介层管芯周围和在第一RDL的一部分的上方形成模塑料,并且第二RDL形成在模塑料的至少一部分的上方。本发明还公开了晶圆级芯片尺寸封装中间结构装置和方法。
Description
相关申请交叉引用
本申请要求2013年3月15日提交的、名称为“Wafer Level Chip Scale PackagingIntermediate Structure Apparatus and Method”的美国临时申请第61/788,470的优先权,该申请的全部内容通过引用结合与此。
技术领域
本发明涉及半导体技术领域,更具体地,涉及晶圆级芯片尺寸封装中间结构装置和方法。
背景技术
半导体器件用于各种电子应用中,诸如个人计算机、移动电话、数码相机和其他电子设备。通常通过在半导体衬底上方依次沉积绝缘或介电层、导电层以及半导体材料层,并且使用光刻技术图案化各种材料层以在其上形成电路部件和元件来制造半导体器件。
半导体工业通过持续减小最小部件尺寸以允许更多的部件被集成到给定的区域内,而持续提高各种电子部件(例如,晶体管、二极管、电阻器、电容器等)的集成密度。在一些情况下,这些更小的电子部件也需要利用比过去的封装件更少面积的更小封装件。
由于层叠封装(PoP)技术允许集成电路更密集地集成到较小的整个封装件中,因而该技术变得越来越流行。PoP技术用于多种先进的手持设备中,诸如智能电话。虽然PoP技术允许更小的封装轮廓,但是,整体厚度的降低目前受到焊球接点高度和相邻接点之间的距离(称为间距)的限制。有时,使用诸如球栅阵列、平面栅格阵列(land grid array)、管脚阵列等的导电安装结构将管芯安装至中介层衬底或其他封装载体。
发明内容
为了解决现有技术中所存在的问题,根据本发明的一个方面,提供了一种形成器件的方法,包括:
在载体上形成第一重分布层(RDL),所述第一RDL具有设置在所述第一RDL的第一侧上的一个或多个安装焊盘;
在所述第一RDL的第二侧上安装一个或多个中介层管芯,所述一个或多个中介层管芯的第一侧与所述第一RDL相邻;
在所述一个或多个中介层管芯的第二侧上方形成第二RDL,所述第二RDL具有与所述中介层管芯相邻的第一侧和与所述第一侧相对的第二侧,一个或多个接合件设置在所述第二RDL的第二侧上,所述一个或多个接合件中的至少一个与所述一个或多个中介层管芯中的至少一个电接触或者与所述一个或多个安装焊盘中的至少一个电接触;以及
将第二部件安装在所述第二RDL的第二侧上设置的所述接合件上。
在可选实施例中,所述方法还包括:在形成所述第二RDL之前,在所述一个或多个中介层管芯周围以及所述第一RDL的一部分上方形成模塑料,其中,形成所述第二RDL包括在所述模塑料的至少一部分上方形成所述第二RDL。
在可选实施例中,形成所述模塑料包括:形成延伸穿过所述模塑料的一个或多个中介层通孔。
在可选实施例中,所述方法还包括减少所述模塑料。
在可选实施例中,所述方法还包括:在所述一个或多个中介层管芯和所述第一RDL之间形成底部填充物。
在可选实施例中,所述方法还包括:在所述第一RDL的安装焊盘上形成一个或多个安装结构。
根据本发明的另一方面,提供了一种形成器件的方法,包括:
位于载体上的第一重分布层(RDL),所述第一RDL具有设置在一个或多个介电层中的一个或多个导电元件以及设置在所述第一RDL的第一侧上的一个或多个安装焊盘;
安装设置在所述第一RDL的第二侧上的一个或多个中介层管芯,所述一个或多个中介层管芯的第一侧与所述第一RDL相邻,并且与设置在所述第一RDL中的所述一个或多个导电元件中的至少一个电接触;和
在所述一个或多个中介层管芯周围和在所述第一RDL的一部分上方施加模塑料;
在所述一个或多个中介层管芯的第二侧上方形成第二RDL;以及
在所述第二RDL的第二侧上形成一个或多个接合件,所述一个或多个接合件中的至少一个与所述一个或多个中介层管芯中的至少一个电接触或者与所述一个或多个安装焊盘中的至少一个电接触。
在可选实施例中,所述方法还包括:在所述模塑料中并且延伸穿过所述模塑料形成一个或多个中介层通孔。
在可选实施例中,所述方法还包括:减少所述模塑料,以使所述一个或多个中介层管芯的第二侧与所述模塑料的第一侧基本上共面,并且所述第二RDL被形成为与所述一个或多个中介层管芯的第二侧和所述模塑料相接触。
在可选实施例中,所述第一RDL与所述第二RDL电接触。
在可选实施例中,所述方法还包括:在所述第二RDL的第二侧上的所述接合件上安装第二部件。
在可选实施例中,所述第二部件与所述一个或多个中介层管芯中的至少一个电接触。
在可选实施例中,安装至少一个中介层管芯包括:安装至少两个中介层管芯,以使所述至少两个中介层管芯中的第一个与所述至少两个中介层管芯中的第二个电接触。
根据本发明的又一方面,提供了一种器件,包括:
第一重分布层(RDL),具有设置在一个或多个介电层中的一个或多个导电元件;
一个或多个安装焊盘,设置在所述第一RDL的第一侧上;
中介层,设置在所述第一RDL的第二侧上,所述中介层包括:
一个或多个中介层管芯,设置在所述第一RDL的第二侧上,所述一个或多个中介层管芯的第一侧与所述第一RDL相邻;和
模塑料,设置在所述一个或多个中介层管芯周围和所述第一RDL的一部分的上方;
第二RDL,设置在所述一个或多个中介层管芯的第二侧上方;以及
一个或多个接合件,设置在所述第二RDL的第二侧上,所述一个或多个接合件中的至少一个与所述一个或多个中介层管芯中的至少一个电接触或者与所述一个或多个安装焊盘中的至少一个电接触。
在可选实施例中,所述器件还包括:设置在所述模塑料中并且延伸穿过所述模塑料的一个或多个中介层通孔。
在可选实施例中,所述一个或多个中介层管芯的第二侧与所述模塑料的第一侧基本共面,并且所述第二RDL与所述一个或多个中介层管芯的第二侧和所述模塑料相接触。
在可选实施例中,所述第一RDL与所述第二RDL电接触。
在可选实施例中,所述器件还包括:设置在所述接合件上的第二部件,所述结合件设置在所述第二RDL的第二侧上。
在可选实施例中,所述第二部件与所述一个或多个中介层管芯中的至少一个电接触。
在可选实施例中,所述至少两个中介层管芯中的第一个是有源器件。
附图说明
为更完整的理解本发明的实施例及其优势,现将结合附图所进行的以下描述作为参考,其中:
图1至图9示出了根据实施例的在形成晶圆级芯片尺寸封装(WLCSP)中间结构的中间步骤的截面图;以及
图10是示出根据实施例的形成WLCSP中间结构的方法的流程图。
除非另有说明,否则不同视图中的相应标号和符号通常代表相应的部件。绘制视图以示出实施例的相关方面,并且不必按比例绘制视图。
具体实施方式
以下详细论述了本实施例的制造和使用。然而,应该理解,本发明提供了许多在各种具体环境中可实现的可应用概念。所论述的特定实施例仅为制造和使用所描述的导电晶圆级芯片尺寸封装(WLCSP)中间结构的示例性的特定方式,并不限制本发明的范围。
将结合特定环境来描述实施例,即,例如,制造和使用WLCSP组件中有用的中间结构。然而,其他实施例也可应用于其他电连接部件,包括但不限于:在组装封装方面,处理衬底、中介层、衬底等,或者,安装输入部件、板、管芯或其他部件方面,或者,用于任何类型的集成电路或电部件的封装或安装组合的连接方面的层叠封装组件、管芯-管芯组件、晶圆-晶圆组件、管芯-衬底组件。
参考图1至图10描述了本发明的实施例,并且还论述了实施例的变化例。贯穿本发明的各个视图和示例性实施例,相似的参考标号用于代表相似的元件。此外,这些视图预期仅为示例性的,并未按比例绘制并且预期不用于限制。值得注意的是,为了简化起见,在每个随后的视图中并非包括所有的元件标号。更确切地说,每个视图中包括与每个附图的描述最相关的元件标号。
WLCSP结构或层叠封装(PoP)结构可包括接合至在器件之间提供电连接的中间结构的一个或多个管芯、芯片、集成电路、板、组件、封装件或其他部件。在一些中间封装件中,将诸如中介层的基底层用作基底以构建一个或多个重分布层(RDL)结构,重分布层结构允许部件被安装并且相互之间进行通信,或与外部器件进行通信。已发现可以在中介层中设置一个或多个部件,并且在器件上方形成RDL结构以在中介层部件、安装在中间结构上的部件之间或与外部器件之间提供电连接。认为这种中间结构可在减小封装尺寸和制造成本的同时,提供更大的器件密度和功率密度。
图1示出了根据实施例的第一RDL104的初始层的截面图。可在载体晶圆102上形成第一RDL104。可提供载体晶圆102以在中间结构形成期间承载或支撑后续的层。载体晶圆102由玻璃、硅、陶瓷、金属或其他材料形成并且具有足够的刚性以防止在工艺期间对中间结构造成明显的弯曲或损害。例如,载体晶圆102的直径约为12英寸,但是可具有被选择为用于在工艺期间处理一个或多个中间结构的尺寸。诸如管芯附接膜(DAF)或光-热转化(LTHC)膜的层压可附接膜(未示出)可应用于载体晶圆102的表面以允许在中间结构的处理期间或之后从载体晶圆剥离。
第一RDL104具有设置在初始介电层108中的一个或多个安装焊盘110和/或一个或多个导电元件106。在实施例中,介电层108的材料是氧化物、氮化物、聚合物等。介电层108与导电元件106相互之间电绝缘。在实施例中,介电层108将具有k值或介电常数,以通过减小导电元件106中的信号在介电层108中产生的电场的量级来防止单独元件之间的串扰。
在实施例中,安装焊盘110和导电元件106由铜(Cu)形成,但是可为多晶硅、金(Au)、铝(Al)、钽(Ta)、钨(W)或任何其他适合的导电材料或化合物。可使用光刻和沉积工艺(诸如等离子体增强化学汽相沉积(PECVD)、物理汽相沉积(PVD)、溅射或其他沉积工艺)来形成安装焊盘110或导电元件106。
可在载体晶圆102上形成安装焊盘110,并且在安装焊盘110上方形成初始介电层108。例如,可通过光刻来蚀刻介电层108,以形成延伸穿过介电层108的一个或多个开口。可在开口中和介电层108的顶部表面上方形成导电元件106。导电元件106包括延伸穿过介电层108的通孔和设置在介电层108上方的迹线以提供电信号的路由。
图2是示出根据实施例形成第一RDL104的附加层的截面图。附加的介电层108形成在初始介电层108上方,并且可具有设置在其中的一个或多个导电元件106。导电元件106可在最高介电层108上形成一个或多个接合焊盘。
图3是示出在第一RDL104上安装中介层管芯302的截面图。中介层管芯302可为管芯、芯片、集成电路、板、组件、封装件等,并可安装在设置在RDL104的顶部的导电元件106或接合焊盘上。中介层管芯302可通过互连件304的阵列(诸如球栅阵列、平面栅格阵列等)的方式附接至导电元件106。在实施例中,如图7至图9所示,可在第一RDL104上安装多个中介层管芯302。此外,中介层管芯302可以是部件类型的组合。例如,一个中介层管芯302可为诸如处理器的有源器件,而第二中介层管芯302是具有一个或多个无源器件(诸如电阻器、电容器、放大器等)的衬底。在另一实例中,中介层管芯302可为微电子机械(MEM)器件,电源管理电路、诸如收发器或信号处理电路的RF电路、图像传感器或图像传感控制器等。在实施例中,一个或多个中介层管芯也可为填充管芯或伪管芯,诸如硅或玻璃/氧化硅结构。例如,在封装件具有三个有源中介层管芯302,但尺寸为接受4个或更多中介层管芯302的情况下,填充管芯可用于中介层(504,图5)中以提供结构刚性或标准化中介层布局或制造工艺。
在实施例中,在应用于第一RDL104时,中介层管芯302具有约500μm或更大的高度。在实施例中,互连件304具有约40μm的间距并且在附接中介层管芯302之后具有约150μm或更小的高度。
图4是示出根据实施例施加底部填充物402的截面图。在实施例中,底部填充物402作为液体或胶体来施加,并被注入在中介层管芯302和第一RDL104之间以填充任何的空隙并为中介层管芯302提供支撑。底部填充物402控制中介层管芯302的弯曲并且允许更小的互连件304间距。
图5是示出根据实施例应用模塑料502和形成中介层504的截面图。中介层504包括中介层管芯302、模塑料502和底部填充物402。在实施例中,模塑料502可以是非导电材料,诸如环氧基树脂、树脂、可模制聚合物等。模塑料502可形成为提供在其上形成后续的层并支撑中介层管芯302的表面。在实施例中,例如,可使用模具(未示出)来对模塑料502成形或模制,模具具有在应用时用于保持模塑料502的边界或其他特征。在实施例中,模具可用于模压模塑料502以迫使模塑料502进入开口或凹槽内,并且可防止在模塑料502中出现气穴等。可通过化学反应来固化模塑料502,诸如在环氧基树脂和树脂中。在另一实施例中,模塑料502可以是紫外线(UV)固化的聚合物。
图6是示出了根据实施例减少中介层504的截面图。可通过研磨等使模塑料502的顶面降低从而减小中介层504的厚度。在实施例中,在减少中介层504期间,可研磨中介层管芯302的顶面。在实施例中,中介层504的减少可将中介层504的厚度降低至约500μm或更小。
图7是示出根据实施例形成中介层通孔702的截面图。中介层通孔702可从模塑料502的顶面延伸到至少第一RDL104的顶面以接触第一RDL104上的导电元件106。在实施例中,中介层通孔702可延伸至第一RDL104内以接触第一RDL104的最高层下方的第一RDL104层中的导电元件106。在实施例中,中介层通孔702可设置在中介层管芯302中或在中介层504中的其他结构中。在实施例中,可沿着模塑料502和中介层管芯302减小中介层通孔702以形成中介层504的基本平坦表面。
在实施例中,在施加模塑料502之后,形成中介层通孔702。例如,可对模塑料502进行蚀刻、精磨或其他处理以形成延伸穿过模塑料而到达至少第一RDL104的开口。然后,通过电镀、沉积等在开口中形成中介层通孔702。在另一实施例中,在施加模塑料502之前或期间形成中介层通孔702。在这样的实施例中,中介层通孔702可以预先形成并放置在导电元件106上或在施加模塑料502之前形成在导电元件106上。然后,围绕所放置的中介层通孔702来形成模塑料502。例如,中介层通孔702可通过精磨、模制等来形成,然后使用超声接合、焊料等将中介层通孔702接合至导电元件106。在另一实施例中,在将中介层通孔702切割成一定长度之前,可使用引线接合器将引线接合在导电元件106上来形成中介层通孔702。在另一实例中,可使用掩模和沉积技术来形成中介层通孔702。
图8是示出根据实施例的中间结构800和形成第二RDL804的截面图。第二RDL804包括其中设置有导电元件106的一个或多个介电层108。可使用与以上针对图1至图2示出的形成第一RDL104描述的工艺相似的工艺来形成第二RDL804。一个或多个焊盘802可设置在第二RDL804的顶面处或顶面上,并且可以被配置为接收安装在其上的一个或多个部件。
图9是示出根据实施例的位于中间结构800上方的具有第二部件902的封装件900的截面图。载体晶圆102可被剥离或去除并且诸如球栅阵列、连接盘网格阵列等的互连件904可应用于安装焊盘110。可将一个或多个第二部件902安装在第二RDL804上的接合件上。第二部件902可以是管芯、芯片、集成电路、板、组件、封装件或其他部件,或各种组件类型的组合。
在实施例中,第一RDL104通过至少一个中介层通孔702的方式与第二RDL804电接触,并且第二部件902通过至少第二RDL804、中介层通孔702或第一RDL104的方式与另一第二部件902、中介层管芯302或互连件904电接触。在实施例中,第一中介层管芯302通过第一RDL或第二RDL的方式与第二中介层管芯302电接触,并且在实施例中,中介层管芯302中的一个与至少一个安装焊盘110接触。
图10是示出根据实施例的形成WLCPS中间结构的方法1000的流程图。在框1002中,在载体晶圆上形成第一RDL。第一RDL具有设置在一个或多个介电层中的一个或多个导电元件。在框1004中,一个或多个中介层管芯安装在第一RDL上并且与至少一个导电元件接触。在框1006中,在第一RDL和中介层管芯之间施加底部填充物,以及,在框1008中,在中介层管芯和第一RDL的至少一部分上方形成模塑料。在框1010中,作为形成模塑料的一部分或者在施加模塑料之后,可在模塑衬底中形成一个或多个中介层通孔。在框1012中,可选地减少模塑料,并且所述减少可以是诸如采用CMP等的研磨。在框1014中,形成第二RDL,且第二RDL设置在中介层管芯和模塑料上方。第二RDL可与中介层管芯和/或模塑料接触,并且可具有设置在一个或多个介电层中的一个或多个导电元件。将一个或多个接合件设置在第二RDL上或者设置在第二RDL的最高层中。在框1016中,在第二RDL的接合件上安装第二部件。在框1018中,剥离载体晶圆,并且在框1020中,在第一RDL的安装焊盘上形成一个或多个安装结构。必要时,包括第二部件和中介层的封装件可被切割,并在后续通过安装结构的方式安装至诸如PCB、载体封装件等的另一器件,或者可被封装、囊封或其他处理。
因此,根据实施例,一种形成器件的方法,包括:在载体上形成第一RDL,第一RDL具有设置在第一RDL的第一侧上的一个或多个安装焊盘并且将一个或多个中介层管芯安装在第一RDL的第二侧上,一个或多个中介层管芯的第一侧与第一RDL相邻。在一个或多个中介层管芯的第二侧上方形成第二RDL,第二RDL具有与中介层管芯相邻的第一侧和与第一侧相对的第二侧。在第二RDL的第二侧上设置一个或多个接合件,一个或多个接合件中的至少一个与一个或多个中介层管芯中的至少一个电接触或者与一个或多个安装焊盘中的至少一个电接触。在形成第二RDL之前,在一个或多个中介层管芯周围和在第一RDL的一部分上方形成模塑料,其中形成第二RDL包括在模塑料的至少一部分上方形成第二RDL。形成延伸穿过模塑料的一个或多个中介层通孔。所述方法还包括减少模塑料以及在一个或多个中介层管芯和第一RDL之间形成底部填充物。在设置在第二RDL的第二侧上的接合件上安装第二部件,并且在第一RDL的安装焊盘上形成一个或多个安装结构。
根据实施例,一种器件,包括:第一RDL,所述第一RDL具有设置在一个或多个介电层中的一个或多个导电元件,以及,设置在RDL的第一侧上的一个或多个安装焊盘,以及设置在第一RDL的第二侧上的中介层。中介层包括设置在第一RDL的第二侧上的一个或多个中介层管芯,一个或多个中介层管芯的第一侧与第一RDL相邻,并且模塑料设置在一个或多个中介层管芯周围和第一RDL的一部分上方。第二RDL设置在一个或多个中介层管芯的第二侧上方,并且一个或多个接合件设置在第二RDL的第二侧上。一个或多个接合件中的至少一个与一个或多个中介层管芯中的至少一个电接触或者与一个或多个安装焊盘中的至少一个电接触。一个或多个中介层通孔设置在模塑料中并且延伸穿过模塑料。一个或多个中介层管芯的第二侧与模塑料的第一侧基本共面,并且第二RDL与一个或多个中介层管芯的第二侧和模塑料相接触。第一RDL与第二RDL电接触。第二部件设置在接合件上,接合件设置在第二RDL的第二侧上。第二部件与一个或多个中介层管芯中的至少一个电接触。中介层可包括至少两个中介层管芯,且至少两个中介层管芯中的第一个与至少两个中介层管芯中的第二个电接触。至少两个中介层管芯中的第一个是有源器件。
尽管已经详细地描述了本发明的实施例及其优势,但应该理解,可以在不背离所附权利要求限定的本发明的精神和范围的情况下,可以对本发明做出各种各种改变、替换和更改。例如,本领域技术人员容易理解,本文描述的许多部件、功能、工艺以及材料可以变化,并且仍然在本发明的范围内。而且,本申请的范围预期不限于本说明书中描述的工艺、机器、制造、以及物质组成、工具、方法或步骤的特定实施例。作为本领域普通技术人员应理解,根据本发明,可以使用现有的或今后开发的用于执行与根据本发明所述的相应实施例基本相同的功能或获得基本相同结果的工艺、机器、制造、物质组成、工具、方法或步骤。因此,所附权利要求预期将这些工艺、机器、制造、物质组成、工具、方法或步骤包括在它们的范围内。
Claims (15)
1.一种形成半导体器件的方法,包括:
在载体晶圆上形成第一重分布层(RDL),所述第一重分布层(RDL)具有设置在多个介电层中的一个或多个导电元件以及设置在所述第一重分布层(RDL)的第一侧上的一个或多个安装焊盘;
在所述第一重分布层(RDL)的第二侧上安装一个或多个中介层管芯,所述一个或多个中介层管芯的第一侧与所述第一重分布层(RDL)相邻;
在所述一个或多个中介层管芯周围以及所述第一重分布层的一部分上方形成模塑料;
在所述一个或多个中介层管芯的第二侧上方形成第二重分布层(RDL),所述第二重分布层(RDL)具有与所述中介层管芯相邻的第一侧和与所述第一侧相对的第二侧,一个或多个接合件设置在所述第二重分布层(RDL)的第二侧上,所述一个或多个接合件中的至少一个与所述一个或多个中介层管芯中的至少一个电接触或者与所述一个或多个安装焊盘中的至少一个电接触;
将第二部件安装在所述第二重分布层(RDL)的第二侧上设置的所述接合件上;以及
形成所述模塑料包括:形成延伸穿过所述模塑料的一个或多个中介层通孔;
其中,所述一个或多个中介层管芯的第二侧与所述模塑料的顶面以及所述一个或多个中介层通孔的顶面共面,所述中介层通孔延伸至所述第一重分布层内以接触所述第一重分布层的最高介电层下方的所述第一重分布层中的导电元件。
2.根据权利要求1所述的方法,其中,形成所述第二重分布层(RDL)包括在所述模塑料的至少一部分上方形成所述第二重分布层(RDL)。
3.根据权利要求1所述的方法,还包括减少所述模塑料。
4.根据权利要求2所述的方法,还包括:在所述一个或多个中介层管芯和所述第一重分布层(RDL)之间形成底部填充物。
5.根据权利要求1所述的方法,还包括:在所述第一重分布层(RDL)的安装焊盘上形成一个或多个安装结构。
6.一种形成半导体器件的方法,包括:
在载体上形成第一重分布层(RDL),所述第一重分布层(RDL)具有设置在多个介电层中的一个或多个导电元件以及设置在所述第一重分布层(RDL)的第一侧上的一个或多个安装焊盘,所述第一重分布层的第一侧邻近所述载体;
安装设置在所述第一重分布层(RDL)的第二侧上的一个或多个中介层管芯,所述一个或多个中介层管芯的第一侧与所述第一重分布层(RDL)相邻,并且与设置在所述第一重分布层(RDL)中的所述一个或多个导电元件中的至少一个电接触;和
在所述一个或多个中介层管芯周围和在所述第一重分布层(RDL)的一部分上方施加模塑料;
在所述模塑料中并且延伸穿过所述模塑料形成一个或多个中介层通孔;
在所述一个或多个中介层管芯的第二侧上方形成第二重分布层(RDL);
在所述第二重分布层(RDL)的第二侧上形成一个或多个接合件,所述第二重分布层具有与所述中介层管芯相邻的第一侧和与所述第一侧相对的第二侧,所述一个或多个接合件中的至少一个与所述一个或多个中介层管芯中的至少一个电接触或者与所述一个或多个安装焊盘中的至少一个电接触;
在所述第二重分布层的第二侧上的所述接合件上安装第二部件;以及
其中,所述一个或多个中介层管芯的第二侧与所述模塑料的顶面以及所述一个或多个中介层通孔的顶面共面,所述中介层通孔延伸至所述第一重分布层内以接触所述第一重分布层的最高介电层下方的所述第一重分布层中的导电元件。
7.根据权利要求6所述的方法,还包括:减少所述模塑料,以使所述第二重分布层(RDL)被形成为与所述一个或多个中介层管芯的第二侧和所述模塑料相接触。
8.根据权利要求6所述的方法,其中,所述第一重分布层(RDL)与所述第二重分布层(RDL)电接触。
9.根据权利要求6所述的方法,其中,所述第二部件与所述一个或多个中介层管芯中的至少一个电接触。
10.根据权利要求6所述的方法,其中,安装至少一个中介层管芯包括:安装至少两个中介层管芯,以使所述至少两个中介层管芯中的第一个与所述至少两个中介层管芯中的第二个电接触。
11.一种半导体器件,包括:
第一重分布层(RDL),具有设置在多个介电层中的一个或多个导电元件以及设置在所述第一重分布层(RDL)的第一侧上的一个或多个安装焊盘;
中介层,设置在所述第一重分布层(RDL)的第二侧上,所述中介层包括:
一个或多个中介层管芯,设置在所述第一重分布层(RDL)的第二侧上,所述一个或多个中介层管芯的第一侧与所述第一重分布层(RDL)相邻;和
模塑料,设置在所述一个或多个中介层管芯周围和所述第一重分布层(RDL)的一部分的上方;
第二重分布层(RDL),设置在所述一个或多个中介层管芯的第二侧上方;以及
一个或多个接合件,设置在所述第二重分布层(RDL)的第二侧上,所述第二重分布层具有与所述中介层管芯相邻的第一侧和与所述第一侧相对的第二侧,所述一个或多个接合件中的至少一个与所述一个或多个中介层管芯中的至少一个电接触或者与所述一个或多个安装焊盘中的至少一个电接触;
一个或多个中介层通孔,设置在所述模塑料中并且延伸穿过所述模塑料;
其中,所述一个或多个中介层管芯的第二侧与所述模塑料的顶面以及所述一个或多个中介层通孔的顶面共面,并且所述第二重分布层与所述一个或多个中介层管芯的第二侧和所述模塑料相接触,所述中介层通孔延伸至所述第一重分布层内以接触所述第一重分布层的最高介电层下方的所述第一重分布层中的导电元件。
12.根据权利要求11所述的半导体器件,其中,所述第一重分布层(RDL)与所述第二重分布层(RDL)电接触。
13.根据权利要求11所述的半导体器件,还包括:设置在所述接合件上的第二部件,所述接合件设置在所述第二重分布层(RDL)的第二侧上。
14.根据权利要求13所述的半导体器件,其中,所述第二部件与所述一个或多个中介层管芯中的至少一个电接触。
15.根据权利要求14所述的半导体器件,其中,所述多个中介层管芯中的第一个是有源器件。
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