CN107710336A - 导电性组合物 - Google Patents

导电性组合物 Download PDF

Info

Publication number
CN107710336A
CN107710336A CN201680034167.7A CN201680034167A CN107710336A CN 107710336 A CN107710336 A CN 107710336A CN 201680034167 A CN201680034167 A CN 201680034167A CN 107710336 A CN107710336 A CN 107710336A
Authority
CN
China
Prior art keywords
conductive composition
composition according
sulfide
metallic
conductive
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201680034167.7A
Other languages
English (en)
Inventor
三原尚明
切替德之
杉山二朗
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Furukawa Electric Co Ltd
Original Assignee
Furukawa Electric Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Furukawa Electric Co Ltd filed Critical Furukawa Electric Co Ltd
Priority to CN202110668371.7A priority Critical patent/CN113249055B/zh
Publication of CN107710336A publication Critical patent/CN107710336A/zh
Pending legal-status Critical Current

Links

Classifications

    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/1075—Partially aromatic polyimides
    • C08G73/1082—Partially aromatic polyimides wholly aromatic in the tetracarboxylic moiety
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
    • C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
    • C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C08G73/12—Unsaturated polyimide precursors
    • C08G73/128—Unsaturated polyimide precursors the unsaturated precursors containing heterocyclic moieties in the main chain
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/10—Metal compounds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/16—Nitrogen-containing compounds
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/36—Sulfur-, selenium-, or tellurium-containing compounds
    • C08K5/37—Thiols
    • C08K5/372—Sulfides, e.g. R-(S)x-R'
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
    • C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C09J11/04—Non-macromolecular additives inorganic
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
    • C09J11/02—Non-macromolecular additives
    • C09J11/06—Non-macromolecular additives organic
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J179/00—Adhesives based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen, with or without oxygen, or carbon only, not provided for in groups C09J161/00 - C09J177/00
    • C09J179/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C09J179/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J179/00—Adhesives based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen, with or without oxygen, or carbon only, not provided for in groups C09J161/00 - C09J177/00
    • C09J179/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
    • C09J179/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
    • C09J179/085—Unsaturated polyimide precursors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J201/00—Adhesives based on unspecified macromolecular compounds
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/10—Adhesives in the form of films or foils without carriers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/20—Adhesives in the form of films or foils characterised by their carriers
    • C09J7/22—Plastics; Metallised plastics
    • C09J7/25—Plastics; Metallised plastics based on macromolecular compounds obtained otherwise than by reactions involving only carbon-to-carbon unsaturated bonds
    • C09J7/255—Polyesters
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J7/00—Adhesives in the form of films or foils
    • C09J7/30—Adhesives in the form of films or foils characterised by the adhesive composition
    • C09J7/35—Heat-activated
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J9/00—Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
    • C09J9/02—Electrically-conducting adhesives
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
    • H01B1/00—Conductors or conductive bodies characterised by the conductive materials; Selection of materials as conductors
    • H01B1/20—Conductive material dispersed in non-conductive organic material
    • H01B1/22—Conductive material dispersed in non-conductive organic material the conductive material comprising metals or alloys
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/52—Mounting semiconductor bodies in containers
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6835—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L21/6836—Wafer tapes, e.g. grinding or dicing support tapes
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/27—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L24/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/02—Elements
    • C08K3/08—Metals
    • C08K2003/085—Copper
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/02—Elements
    • C08K3/08—Metals
    • C08K2003/0862—Nickel
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K2201/00—Specific properties of additives
    • C08K2201/001—Conductive additives
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K3/00—Use of inorganic substances as compounding ingredients
    • C08K3/02—Elements
    • C08K3/08—Metals
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/36—Sulfur-, selenium-, or tellurium-containing compounds
    • C08K5/37—Thiols
    • C08K5/375—Thiols containing six-membered aromatic rings
    • C—CHEMISTRY; METALLURGY
    • C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
    • C08K5/00—Use of organic ingredients
    • C08K5/36—Sulfur-, selenium-, or tellurium-containing compounds
    • C08K5/45—Heterocyclic compounds having sulfur in the ring
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2203/00—Applications of adhesives in processes or use of adhesives in the form of films or foils
    • C09J2203/326—Applications of adhesives in processes or use of adhesives in the form of films or foils for bonding electronic components such as wafers, chips or semiconductors
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2301/00—Additional features of adhesives in the form of films or foils
    • C09J2301/40—Additional features of adhesives in the form of films or foils characterized by the presence of essential components
    • C09J2301/408—Additional features of adhesives in the form of films or foils characterized by the presence of essential components additives as essential feature of the adhesive layer
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2463/00—Presence of epoxy resin
    • C—CHEMISTRY; METALLURGY
    • C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09J—ADHESIVES; NON-MECHANICAL ASPECTS OF ADHESIVE PROCESSES IN GENERAL; ADHESIVE PROCESSES NOT PROVIDED FOR ELSEWHERE; USE OF MATERIALS AS ADHESIVES
    • C09J2479/00—Presence of polyamine or polyimide
    • C09J2479/08—Presence of polyamine or polyimide polyimide
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
    • H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
    • H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
    • H01L2221/68386—Separation by peeling
    • H01L2221/6839—Separation by peeling using peeling wedge or knife or bar
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/04026—Bonding areas specifically adapted for layer connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H01L2224/0554—External layer
    • H01L2224/05599—Material
    • H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/05644—Gold [Au] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/27—Manufacturing methods
    • H01L2224/274—Manufacturing methods by blanket deposition of the material of the layer connector
    • H01L2224/2743—Manufacturing methods by blanket deposition of the material of the layer connector in solid form
    • H01L2224/27436—Lamination of a preform, e.g. foil, sheet or layer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199—Material of the matrix
    • H01L2224/292—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29201—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29209—Indium [In] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199—Material of the matrix
    • H01L2224/292—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29201—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29211—Tin [Sn] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199—Material of the matrix
    • H01L2224/292—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29217—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/29218—Zinc [Zn] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199—Material of the matrix
    • H01L2224/292—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29217—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/29224—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199—Material of the matrix
    • H01L2224/292—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29238—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29239—Silver [Ag] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199—Material of the matrix
    • H01L2224/292—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29238—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29244—Gold [Au] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199—Material of the matrix
    • H01L2224/292—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29238—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29247—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199—Material of the matrix
    • H01L2224/292—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29238—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29255—Nickel [Ni] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199—Material of the matrix
    • H01L2224/292—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29263—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/29266—Titanium [Ti] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29199—Material of the matrix
    • H01L2224/2929—Material of the matrix with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29301—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29309—Indium [In] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29301—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
    • H01L2224/29311—Tin [Sn] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29317—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/29318—Zinc [Zn] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29317—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/29324—Aluminium [Al] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29339—Silver [Ag] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29344—Gold [Au] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29347—Copper [Cu] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29338—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
    • H01L2224/29355—Nickel [Ni] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
    • H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
    • H01L2224/29001—Core members of the layer connector
    • H01L2224/29099—Material
    • H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
    • H01L2224/29298—Fillers
    • H01L2224/29299—Base material
    • H01L2224/293—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
    • H01L2224/29363—Base material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than 1550°C
    • H01L2224/29366—Titanium [Ti] as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
    • H01L2224/31—Structure, shape, material or disposition of the layer connectors after the connecting process
    • H01L2224/32—Structure, shape, material or disposition of the layer connectors after the connecting process of an individual layer connector
    • H01L2224/321—Disposition
    • H01L2224/32151—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/32221—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/32245—Disposition the layer connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L2224/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H01L2224/45001—Core members of the connector
    • H01L2224/45099—Material
    • H01L2224/451—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof
    • H01L2224/45117—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron (B), silicon (Si), germanium (Ge), arsenic (As), antimony (Sb), tellurium (Te) and polonium (Po), and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
    • H01L2224/45124—Aluminium (Al) as principal constituent
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/4805—Shape
    • H01L2224/4809—Loop shape
    • H01L2224/48091—Arched
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/73—Means for bonding being of different types provided for in two or more of groups H01L2224/10, H01L2224/18, H01L2224/26, H01L2224/34, H01L2224/42, H01L2224/50, H01L2224/63, H01L2224/71
    • H01L2224/732—Location after the connecting process
    • H01L2224/73251—Location after the connecting process on different surfaces
    • H01L2224/73265—Layer and wire connectors
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/8319—Arrangement of the layer connectors prior to mounting
    • H01L2224/83191—Arrangement of the layer connectors prior to mounting wherein the layer connectors are disposed only on the semiconductor or solid-state body
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8384—Sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83851—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester being an anisotropic conductive adhesive
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/838—Bonding techniques
    • H01L2224/8385—Bonding techniques using a polymer adhesive, e.g. an adhesive based on silicone, epoxy, polyimide, polyester
    • H01L2224/83855—Hardening the adhesive by curing, i.e. thermosetting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
    • H01L2224/83—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a layer connector
    • H01L2224/83905—Combinations of bonding methods provided for in at least two different groups from H01L2224/838 - H01L2224/83904
    • H01L2224/83906—Specific sequence of method steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L2224/80 - H01L2224/90
    • H01L2224/92—Specific sequence of method steps
    • H01L2224/922—Connecting different surfaces of the semiconductor or solid-state body with connectors of different types
    • H01L2224/9222—Sequential connecting processes
    • H01L2224/92242—Sequential connecting processes the first connecting process involving a layer connector
    • H01L2224/92247—Sequential connecting processes the first connecting process involving a layer connector the second connecting process involving a wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/93—Batch processes
    • H01L2224/94—Batch processes at wafer-level, i.e. with connecting carried out on a wafer comprising a plurality of undiced individual devices
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/02—Bonding areas ; Manufacturing methods related thereto
    • H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L24/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/44—Structure, shape, material or disposition of the wire connectors prior to the connecting process
    • H01L24/45—Structure, shape, material or disposition of the wire connectors prior to the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/42—Wire connectors; Manufacturing methods related thereto
    • H01L24/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L24/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/73—Means for bonding being of different types provided for in two or more of groups H01L24/10, H01L24/18, H01L24/26, H01L24/34, H01L24/42, H01L24/50, H01L24/63, H01L24/71
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/91—Methods for connecting semiconductor or solid state bodies including different methods provided for in two or more of groups H01L24/80 - H01L24/90
    • H01L24/92—Specific sequence of method steps
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/0665—Epoxy resin
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/06—Polymers
    • H01L2924/0705—Sulfur containing polymer
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1305—Bipolar Junction Transistor [BJT]
    • H01L2924/13055—Insulated gate bipolar transistor [IGBT]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/10—Details of semiconductor or other solid state devices to be connected
    • H01L2924/11—Device type
    • H01L2924/13—Discrete devices, e.g. 3 terminal devices
    • H01L2924/1304—Transistor
    • H01L2924/1306—Field-effect transistor [FET]
    • H01L2924/13091—Metal-Oxide-Semiconductor Field-Effect Transistor [MOSFET]
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
    • H01L2924/15—Details of package parts other than the semiconductor or other solid state devices to be connected
    • H01L2924/181—Encapsulation

Landscapes

  • Chemical & Material Sciences (AREA)
  • Organic Chemistry (AREA)
  • Engineering & Computer Science (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Polymers & Plastics (AREA)
  • Medicinal Chemistry (AREA)
  • Health & Medical Sciences (AREA)
  • Manufacturing & Machinery (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Dispersion Chemistry (AREA)
  • Inorganic Chemistry (AREA)
  • Adhesives Or Adhesive Processes (AREA)
  • Die Bonding (AREA)
  • Dicing (AREA)
  • Conductive Materials (AREA)
  • Adhesive Tapes (AREA)

Abstract

本发明的目的在于，提供一种在将半导体功率元件接合于金属引线框时，耐热性和安装可靠性优异、且无铅、对环境的负荷小的机构。即，提供一种至少含有用R‑S‑R’表示的硫化物、以及至少含有Cu、Sn、Ni中的任一种的金属粒子作为必要成分的导电性组合物。(R是至少含碳的有机基团，R’是与R相同或不同的有机基团。另外，R也可以与R’键合，即，也可以为所谓的环状硫化物。)。而且提供使用所述导电性组合物制造而成的导电性浆料、导电性粘接膜、以及使所述导电性粘接膜与粘合带贴合而成的切割芯片接合膜。

Description

导电性组合物
技术领域
本发明涉及一种导电性组合物。具体而言，涉及导电性浆料、导电性粘接剂组合物、以及由其构成的导电性粘接膜、以及使其与粘合带贴合而成的切割芯片接合膜。
背景技术
将IGBT(绝缘栅双极型晶体管)、MOS-FET(场效应晶体管)等半导体功率元件接合于金属引线框时，以往，广泛使用无铅焊料，但是近日，铅的有害性被视为问题。而且，近年，在谋求更高密度能量控制的背景下，使用耐受200℃以上的结点温度的SiC、GaN等的宽带隙半导体的功率元件的研究正在进行中，但是，由于铅焊料的共晶熔点低，接合部分的耐热性不足成为瓶颈。
根据上述背景，出现了不含铅的各种类型的无铅焊料，其中AuGe等高熔点焊料作为宽带隙半导体元件的接合材受到瞩目，但是由于材料价格高昂，安装温度升高，工艺成本变高成为瓶颈，不能推进普及。另外，多数的无铅焊料比铅焊料的润湿性差，因此，焊料不能在芯片焊盘部分湿润铺展、容易变成在模具的角等遗漏焊料的状态、引起该部分接合不良的风险成为问题。熔点越高，无铅焊料的润湿性有进一步变差的倾向，因此，难以兼顾耐热性和安装可靠性。
为了解决上述问题，正在进行Cu/Sn系焊料等扩散烧结型的焊料的研究。尽管这些扩散烧结型的焊料在安装时的熔点低，在扩散烧结反应后不可逆地高熔点化，因此，比现有的无铅焊料更有利于兼顾耐热性和安装可靠性。但是，即使是扩散烧结型焊料，相比铅焊料的润湿性略差，因此，接合5mm2以上的大面积元件时，还是存在焊料遗漏的危险，且烧结体硬、脆，应力松弛性低，因此，有耐热疲劳特性低，元件寿命短的缺点。
除上述无铅焊料以外，也使用Ag浆料等，但是材料成本变得非常高昂，由Ag离子的迁移导致的污染成为问题。
另外，在多数铅焊料、无铅焊料中，出于除去金属的氧化覆膜的目的，通常添加由羧酸、醇构成的焊剂，但是已知这些焊剂成分容易吸湿，且容易渗出，吸湿部分与焊剂的渗出部分双方都对半导体元件的密封封装中的吸湿后耐回流焊可靠性(MSL)造成不良影响，以往，需要在焊接后洗净焊剂，其操作、洗净废液的处理被视为问题。尽管如此，为了降低吸湿和渗出，如果不添加羧酸、醇，则氧化膜的除去能力不足，难以表现导电性及其他性能。
而且，在专利文献4中记载了，在用于半导体装置的、优选使用银作为无机填料的粘合剂组合物中，使用硫醇、硫醚作为焊剂，但是由于银价格高昂且易发生离子迁移，在电极间发生不期望的短路的风险较大。
现有技术文献
专利文献
专利文献1：日本特开2002-307188号公报
专利文献2：日本特开2007-152385号公报
专利文献3：US2014/120356A1
专利文献4：日本特开2014-196437号公报
发明内容
发明要解决的问题
本发明的目的在于，提供一种在将半导体功率元件接合于金属引线框时，耐热性和安装可靠性优异、且无铅、对环境的负荷小的机构。
用于解决问题的方案
申请人进行致力研究的结果是，已完成解决上述问题的导电性组合物、以及使用所述导电性组合物而成的导电性浆料、导电性粘接膜以及切割芯片接合膜的发明。
即，本发明涉及一种至少含有用下述通式(1)表示的硫化物、以及至少含有Cu、Sn、Ni中的任1种的金属粒子作为必要成分的导电性组合物。
(R是至少含碳的有机基团，R’是与R相同或不同的有机基团。另外，R也可以与R’键合。)
通式(1)
[化学式1]
R-S-R’
此处，所述硫化物优选为1分子中含有2个以上硫原子的化合物。
另外，所述硫化物优选为具有乙烯基、丙烯酰基、伯氨基、仲氨基、酚性羟基、硫醇基、氢化硅烷基、硼氢基、马来酸酯、马来酸酰胺基、马来酸酰亚胺基中的至少一种的化合物。
另外，所述硫化物的数均分子量优选为200以上。
而且，本发明涉及至少含有所述硫化物、金属粒子、以及热固性树脂的上述导电性组合物。
此处，所述热固性树脂优选含有1分子内含有2单元以上的酰亚胺基的马来酸酰亚胺化合物。
另外，所述马来酸酰亚胺化合物优选含有来自C10以上的脂肪族胺的骨架。
另外，所述马来酸酰亚胺化合物的数均分子量优选为3000以上。
另外，所述热固性树脂也优选为环氧树脂。
另外，所述金属粒子的至少1部分优选含有Cu、Ag、Au、Ni、Sn中的任1种。
另外，所述金属粒子优选为含有能够相互形成金属间化合物的组合的2种以上的金属的混合物。
另外，所述2种以上金属粒子中的至少2种优选为从Cu、Ag、Ni、Ti、Al、Sn、Zn、Au、In中选出的金属。
而且，本发明涉及上述导电性组合物，其特征在于，烧结前通过DSC(差示扫描热量测定)观测的吸热峰在100℃～250℃之间至少存在1个，并且烧结后观测不到所述吸热峰。
而且，本发明涉及使用上述导电性组合物而成的导电性粘接剂组合物。
而且，本发明涉及将上述导电性粘接剂组合物涂布于基材并干燥、挤出、通过其他方法成型为膜状的导电性粘接膜。
此外，本发明涉及一种使上述导电性粘接膜与粘合带贴合而成的切割芯片接合膜。
发明效果
通过使用用本发明提供的导电性组合物而成的导电性浆料、导电性粘接膜、或者组合其与切割带而成的切割芯片接合膜，能够提供一种价格低廉且对环境的负荷也小的机构，所述机构能够在低温条件下安装且烧结后的耐热性优异，没有焊料遗漏不良，即使省略焊剂洗净工序在耐热疲劳和吸湿后耐回流焊性上也优异，能够使功率半导体能够与引线框等电接合。
附图说明
图1是表示根据本发明的实施方式的切割芯片接合膜的截面图。
图2是表示本发明的切割芯片接合膜贴合于半导体的状态的图。
图3是用于说明切割工序的图。
图4是用于说明拾取工序的图。
图5是用于说明芯片接合工序的图。
图6是表示已经模塑的半导体元件的截面的图。
具体实施方式
本发明的导电性组合物的特征在于，至少含有用下述通式(1)表示的硫化物、以及至少含有Cu、Sn、Ni中的任1种的金属粒子作为必要成分。
(R是至少含碳的有机基团，R’是与R相同或不同的有机基团。另外，R也可以与R’键合，即，也可以为所谓的环状硫化物。)
通式(1)
[化学式1]
R-S-R'
此处，金属粒子负责导电性和导热性，用通式(1)表示的硫化物通过除去金属粒子表面的氧化膜具有帮助其工作的、所谓“焊剂”的功能。作为金属粒子，特别是在像Cu、Sn、Ni这样的容易氧化的金属中，起到显著的效果。而且，从价格低廉、且难以发生离子迁移出发，也是优选的。
(硫化物)
作为焊剂，使用用通式(1)表示的硫化物，与作为现有焊剂通常使用的羧酸或者醇相比，从极其难以吸湿的点出发，是优选的。
而且，上述硫化物是在1分子中含有2个以上的硫原子的化合物，从提高金属氧化膜的还原能力的点出发，是优选的。
而且，上述硫化物优选为具有乙烯基、丙烯酰基、伯氨基、仲氨基、酚性羟基、硫醇基、氢化硅烷基、硼氢基、马来酸酯、马来酸酰胺基、马来酸酰亚胺基中的至少1种的官能团的化合物，进一步地，从固化容易度的点出发，优选为具有丙烯酰基的化合物。
另外，所述硫化物的数均分子量为200以上，从抑制烧结时等的渗出的点出发，是优选的。通过上述分子量和固化，能够将渗出减至极少，从而防止由引线框的污染导致的封装的可靠性低下，且因渗出而浪费的硫化物焊剂的量极少，因此，焊剂的还原能力几乎能够100％地有效利用。
作为这种硫化物的具体例，可举出2-甲巯基吩噻嗪、双(4-甲基丙烯酰基硫代苯基)硫醚、双(2-甲基丙烯酰基乙巯基)硫醚(Bis(2-methacroylthioethyl)sulfide)。
这种丙烯酰基硫化物作为能够与马来酰亚胺树脂形成共聚物的热固性树脂成分发挥作用。如此地，通过使用因难以吸湿、分子量足够大且具有聚合性而低渗出的焊剂成分，几乎不含有或者完全不含有容易吸湿的醇或羧酸，从而即使不经过焊剂洗净也能够降低渗出风险，能够确保充分的可靠性、特别是吸湿后的耐回流焊性。
从具有充分的金属氧化膜的除去能力的观点出发，所述硫化物的导电性组合物中的重量分率优选为1～10wt％，进一步优选为2～5wt％。
(金属粒子)
作为金属粒子，优选至少1部分含有Cu、Ag、Au、Ni、Sn中的任1种。
另外，所述至少1部分含有能够相互形成金属间化合物的组合，从降低安装温度且烧结后具有安装温度以上的耐热性的点出发，是优选的。
作为这种组合，优选至少2种为从Cu、Ag、Ni、Ti、Al、Sn、Zn、Au、In中选出，例如，可举出Cu或Ni或Ag与Sn或Zn的组合、Ag与Sn的组合、Ni或Sn或Al与Ti的组合、Au与In的组合等，但是特别是从降低安装温度的观点出发，优选含有低熔点的Sn的组合，特别优选含有Cu或Ni与Sn的组合。
除了能够形成所述金属间化合物的金属的组合以外，根据需要，也可以添加其他金属成分。例如，通过对在Sn中添加Zn、Bi、Ag、In、Ga、Pd等预先合金化而成的物质进行粒子化而使用，从而能够进一步低熔点化。
所述金属粒子的导电性组合物中的重量分率优选为70～96wt％。
在所述金属粒子中，尽可能不含有铅、汞、锑以及砷，具体而言，在导电性组合物中小于0.1wt％，从低环境负荷的观点出发，是优选的。
在进行下文所述的切割后、烧结前，存在通过DSC作为吸热峰观测的能够归属于至少1种金属成分的熔点，由此，将所述成分涂布于被附着体表面有利于在低温下的安装。进一步地，所述成分在烧结后通过金属间的扩散反应而高熔点化，由此，具有即使例如在安装后用高熔点无铅焊料进行引线接合、实施流程处理等也能够耐受的充分的耐热性。安装温度优选为100～250℃，进一步优选为100～200℃。耐热温度优选为250℃以上，进一步优选为300℃以上。
(热固性树脂)
在本申请发明的导电性组合物中，优选进一步含有热固性树脂。热固性树脂具有赋予烧结前的膜性和对由烧结后的热循环产生的应力等的松弛性的效果。
从耐热性和与金属离子混合时的膜性的观点出发，热固性树脂优选为含有在1分子中含有2单位以上的酰亚胺基的马来酸酰亚胺化合物的马来酸酰亚胺树脂(马来酰亚胺树脂)或环氧树脂。所述马来酸酰亚胺树脂能够通过对例如马来酸或其酸酐与二胺或聚胺进行缩合等而得到，从应力松弛性的观点出发，优选含有来自C10以上的脂肪族胺的骨架的物质，特别优选为具有C30以上、像下述通式(2)这样的骨架的物质。
通式(2)
[化学式2]
也可以通过在所述马来酸酰亚胺树脂中含有来自除马来酸以外的酸成分、例如苯四甲酸或其酸酐、羟基苯二甲酸双醚或其酸酐等的骨架，从而调整分子量、Tg等。作为马来酸酰亚胺树脂的固化剂，优选酚醛树脂、自由基产生剂等。
作为这种结构的双马来酰亚胺树脂，可举出例如下述的结构式所示的各种物质。
[化学式3]
另外，上式中，“C36”是指下述结构。
[化学式4]
而且，所述马来酸酰亚胺化合物的数均分子量优选为3000以上。
选择环氧树脂作为热固性树脂时，从应力松弛性和膜性的平衡的观点出发，优选双酚A型环氧树脂与双酚F型环氧树脂以及它们的组合，进一步优选它们与分子量大的作为环氧树脂的苯氧树脂的混合物。作为环氧树脂的固化剂，能够选择酸酐、酚醛树脂、胺、咪唑、双氰胺等。
通过含有如上所述的具备应力松弛性的热固性树脂，本发明的导电性组合物的烧结体克服了由于现有的只有金属的无铅焊料硬且脆而热疲劳特性差的缺点，且确保烧结前的膜性，因此，特别是在作为粘合膜用途使用时优选。
本发明的导电性组合物在作为粘合用途使用时是膜状的，由此，在贴合于形成有例如功率半导体元件的晶片的背面，对每个元件的晶片进行分割、芯片化的切割工序中，能够分割每个晶片的粘合膜，由此，能够不考虑焊料的润湿性，即与湿润扩展、溢出等由于是液体而产生的问题，而合适地在元件的整个背面全体容易地安装粘合膜。而且，通过将粘合膜调整为预定的厚度，与现有的焊料、导电浆料相比，能够以良好的精度进行装片后的元件的高度控制。
本发明的导电性粘接膜通过在基材上将上述本发明的导电性组合物基材成型为膜状而成。作为成形方法，可举出在基材上涂布将导电性组合物溶解分散于溶剂而成的清漆后使其干燥的方法、在高温条件下使导电性组合物熔融后在基材涂布的熔融涂布法、通过高压对导电性组合物与基材一起压制的方法方法、熔融导电性组合物后使用挤出机挤出后延伸的挤出法、在筛网(丝网印刷)、金属版(凹版)等填充上述清漆并转印的印刷法等公知的方法，但并不受这些方法的限定。
另外，通过将本发明的导电性粘接膜与切割带组合，进行切割芯片接合膜化，从而能够一次将粘合膜与切割带贴合于晶片上，能够省略工序。
基于附图对上述实施方式进行说明。
图1是表示根据本申请发明的切割芯片接合膜10的截面图。切割芯片接合膜10主要由切割带12、粘合膜13构成。切割芯片接合膜10是半导体加工用带的一例，可以根据使用工序、装置，切断(预切)成预定形状，也可以切断成每片半导体晶片，也可以呈长条的锟状。
切割带12由支持基材12a和形成于其上的粘合剂层12b构成。
剥离处理PET11覆盖切割带12，保护粘合剂层12b、粘合膜13。
作为支持基材12a，优选放射线能透过的物质，具体而言，通常使用塑料、橡胶等，只要是能透过放射线，就没有特别的限制。
对于粘合剂层12b的粘合剂的基体树脂组合物，没有特别的限定，使用通常的放射线固化性粘合剂。优选的有具有羟基等能与异氰酸酯基反应的官能团的丙烯酸系粘合剂。没有特别的限定，但是优选丙烯酸系粘合剂为碘价30以下的具有放射线固化性碳-碳双键结构的物质。
作为本申请发明中所述的粘合膜13的构成，如上所述，含有金属粒子、热固性树脂、具有路易斯酸性的化合物或者热酸产生剂的导电性粘接膜在将半导体功率元件接合于金属引线框时，耐热性和安装可靠性优异、且对环境的负荷小，从这一点出发，是非常优选的。
(切割芯片接合膜的使用方法)
制造半导体装置时，能够合适地使用本发明的切割芯片接合膜10。
首先，从切割芯片接合膜10除去剥离处理PET11，如图2所示，在半导体晶片1上贴附粘合膜13，用环形框20固定切割带12的侧部。环形框20是切割用框的一例。粘合膜13层叠于贴合有切割带12的半导体晶片1的部位。在与切割带12的环形框20连接的部位没有粘合膜13。
然后，如图3所示，用吸附工作台22吸附、固定切割带12的下表面，同时用切割刀具21将半导体晶片1切割成规定大小，制造多个半导体芯片2。
然后，如图4所示，在通过环形框20固定切割带12的状态下，使带顶起环30上升，使切割带12的中央部向上方弯曲，同时用紫外线等放射线照射切割带12，减弱切割带12的粘合力。然后，对每个半导体芯片，在与其对应的位置使顶起销31上升，通过吸附夹具32拾取半导体芯片2。
然后，如图5所示，将拾取的半导体芯片2粘合于引线框4等支持部件、其他半导体芯片2(芯片接合工序)，如图6所示，通过Al丝的附设、树脂模塑、加热固化、烧结等工序，得到半导体装置。
(导电性浆料)
在上述实施方式中，示出将本申请发明的导电性组合物以导电性粘接剂组合物的形式作为粘合膜13的形态使用的示例，也可以减少在导电性组合物中配合的热固性树脂的量，或者不配合热固性树脂，以浆料状的形态作为焊料等用途来使用。具体而言，通过丝网印刷、分散器等进行涂布，从而能够提供于电子部件的连接。
实施例
以下，通过实施例具体说明本发明，但是本发明不应该受该实施例的任何限定、约束拘束。另外，wt％表示重量％。
＜实施例1～4＞
通过表1的组成，在金属粒子92wt％、树脂4.5wt％、焊剂3.5wt％的混合物中添加甲苯，进行浆料化，通过行星式混合机搅拌后，在经脱模处理的PET上薄薄地涂布，在120℃条件下使其干燥，得到厚度40μm的粘合膜。而且，在表中，BMI-3000为下述结构(n＝1～10)。
[化合物5]
＜比较例1、2＞
通过表1的组成，除了设为金属粒子85wt％、树脂8wt％、焊剂7wt％的组成以外，通过与实施例相同的方法制作粘合膜。
＜支持基材＞
在140℃条件下将由市售的低密度聚乙烯制成的树脂珠(日本聚乙烯(株)制造NOVATEC LL)熔融，用挤出机成型为厚度100μm的长条膜状。
＜粘合剂组合物＞
将丙烯酸正丁酯、丙烯酸-2-羟乙酯、甲基丙烯酸、作为聚合引发剂的过氧化苯甲酰的200：10：5：2(重量比)混合物分散于适量的甲苯中，调整反应温度和反应时间，得到具有官能团的丙烯酸树脂的溶液。接着，在该丙烯酸树脂溶液中，相对于所述丙烯酸树脂溶液100重量份，添加2重量份的作为多异氰酸酯的CoronateL(日本聚氨酯制造)和作为追加的溶剂的适量的甲苯，进行搅拌，得到粘合剂组合物1。
＜切割带＞
在支持基材上，以使粘合剂组合物1在干燥后的厚度成为5μm的方式涂布所述粘合剂组合物，在120℃条件下干燥3分钟，作成切割带。
在通过实施例1～4、比较例1、2得到的粘合膜、以及使其与切割带贴合而成的切割装片带中，对下述项目进行评价，将其结果同样地表示于表1。
·体积电阻率···通过基于JIS-K7194的四探针法测定
·DSC···使用DSC测定装置(日立高新技术制DSC7000)，确认了烧结前的各样品在200～250℃的温度区域有无吸热峰。接着，对在氮气、250℃条件下烧结各样品4小时而得的物质实施同样的测定。
·粘合力···通过使粘合膜与切割带贴合，从而调整芯片接合膜，在100℃条件下贴合于在背面镀Au的Si晶片后，切割成5mm2，得到切成片的芯片和粘合膜。在140℃条件下在镀Ag的金属引线框上进行芯片接合后，在230℃条件下烧结3小时而作成样品，通过剪切测定机(arktech制造系列4000)在260℃条件下对该样品260℃测定剪切粘合力。
·TCT后的粘合力···在对与上述相同的样品进行循环的冷热冲击(TCT)处理后，测定在260℃条件下的剪切粘合力。
·MSL-Lv1、Lv2、Lv3后有无PKG剥离···用环氧系的模塑树脂密封粘合力相同的样品后，通过JEDEC J-STD-020D1所规定的吸湿后回流焊试验(无铅焊料标准)的MSL-Lv1、Lv2、Lv3(参照表2)进行处理后，通过超声波图像装置(日立电力解决方案制造SAT)观察内部是否发生剥离。
表1
另外，在表1中，
Cu：三井金属矿业制造微粒铜粉
SnBi合金：三井金属矿业制造微粒焊锡粉Sn72Bi28
环氧树脂：新日铁住金化学制造YD-128+YD-013+YP-50+四国化成制造2PHZ的15：5：10：1混合物
双马来酰亚胺(C9)：1，6’-双马来酰亚胺-(2，2，4-三甲基)己烷+日油制造Perbutyl O的100：5混合物
双马来酰亚胺(C10)：1，10-双马来酰亚胺-正癸烷+日油制造PerbutylO的100：5混合物
双马来酰亚胺(C36)：DMI公司制造BMI-3000+日油制造PerbutylO的100：5混合物
硫化物1：苯硫醚Mw＝186.3
硫化物2：噻蒽Mw＝216.3
硫化物2：双(4-甲基丙烯酰基硫代苯基)硫醚Mw＝386.6。
表2
MSL 吸湿条件 回流等级温度
Lv.1 85℃-85％RH×168h 260℃
Lv.2 85℃-60％RH×168h 260℃
Lv.3 30℃-60％RH×192h 260℃
根据上述结果证明了含有金属粒子、作为焊剂的用所述通式(1)表示的硫化物的实施例1～4的导电性粘接膜不使用环境负荷高的铅焊料起到同时具有耐热性、吸湿可靠性、键合可靠性的现有技术中没有的显著效果。
特别地，可知作为焊剂使用具有丙烯酰基的硫化物的实施例3、以及除具有上述丙烯酰基的硫化物以外作为热固性树脂还使用含有来自碳数30以上的脂肪族胺的骨架的马来酸酰亚胺树脂的实施例4具有非常优异的性能。
与此相对，证明了在作为焊剂不使用硫化物而使用四乙二醇的比较例1、使用松香酸的比较例2中，TCT后的粘合力低，而且容易吸湿，因此，在MSL试验后也表示出内部剥离等吸湿可靠性、键合可靠性方面有困难。而且，松香酸的每羧酸质量的当量小，因此，以像实施例的这样比较少的量添加，不能除去氧化膜。由此，氧化膜成为壁垒，金属间的扩散反应不进行，因此，造成烧结后还残留吸热峰的结果。
附图标记说明：
1：半导体晶片
1a：背面Au镀层
2：半导体芯片
4：金属引线框
4a：Ag镀层
5：模塑树脂
6：Al丝
10：切割芯片接合膜
11：剥离处理PET
12：切割带
12a：支持基材
12b：粘合剂层
13：粘合膜
20：环形框
21：切割刀具
22：吸附台
30：带顶起环
31：顶起销
32：吸附夹具

Claims (16)

1.一种导电性组合物，其至少含有用下述通式(1)表示的硫化物、以及至少含有Cu、Sn、Ni中的任1种的金属粒子作为必要成分，
通式(1)
[化学式1]
R-S-R′
R是至少含碳的有机基团，R’是与R相同或不同的有机基团，另外，R也可以与R’键合。
2.根据权利要求1所述的导电性组合物，其中，所述硫化物是1分子中含有2个以上硫原子的化合物。
3.根据权利要求1或2所述的导电性组合物，其中，所述硫化物是具有乙烯基、丙烯酰基、伯氨基、仲氨基、酚性羟基、硫醇基、氢化硅烷基、硼氢基、马来酸酯、马来酸酰胺基、马来酸酰亚胺基中的至少1种的化合物。
4.根据权利要求1～3中任一项所述的导电性组合物，其中，所述硫化物的数均分子量为200以上。
5.根据权利要求1～4中任一项所述的导电性组合物，其中，所述导电性组合物至少含有用所述通式(1)表示的硫化物、金属粒子、以及热固性树脂。
6.根据权利要求5所述的导电性组合物，其特征在于，所述热固性树脂含有在1分子中含有2单元以上的酰亚胺基的马来酸酰亚胺化合物。
7.根据权利要求6所述的导电性组合物，其特征在于，所述马来酸酰亚胺化合物含有来自C10以上的脂肪族胺的骨架。
8.根据权利要求6或7所述的导电性组合物，其中，所述马来酸酰亚胺化合物的数均分子量为3000以上。
9.根据权利要求5所述的导电性组合物，其中，所述热固性树脂为环氧树脂。
10.根据权利要求1～9中任一项所述的导电性组合物，其特征在于，所述金属粒子的至少1部分含有Cu、Ag、Au、Ni、Sn中的任1种。
11.根据权利要求1～10中任一项所述的导电性组合物，其特征在于，所述金属粒子是含有能够相互形成金属间化合物的组合的2种以上的金属的混合物。
12.根据权利要求11所述的导电性组合物，其特征在于，所述2种以上的金属粒子的至少2种是从Cu、Ag、Ni、Ti、Al、Sn、Zn、Au、In中选出的金属。
13.根据权利要求1～12中任一项所述的导电性组合物，其特征在于，烧结前通过DSC、即差示扫描热量测定而观测的吸热峰在100℃～250℃之间至少存在1个，并且烧结后观测不到所述吸热峰。
14.一种导电性粘接剂组合物，其使用权利要求1～13中任一项所述的导电性组合物而成。
15.一种导电性粘接膜，其在基材上使权利要求14所述的导电性粘接剂组合物成型为膜状而成。
16.一种切割芯片接合膜，其使权利要求15所述的导电性粘接膜与粘合带贴合而成。
CN201680034167.7A 2015-08-03 2016-07-22 导电性组合物 Pending CN107710336A (zh)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN202110668371.7A CN113249055B (zh) 2015-08-03 2016-07-22 导电性组合物

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2015153223 2015-08-03
JP2015-153223 2015-08-03
PCT/JP2016/071556 WO2017022523A1 (ja) 2015-08-03 2016-07-22 導電性組成物

Related Child Applications (1)

Application Number Title Priority Date Filing Date
CN202110668371.7A Division CN113249055B (zh) 2015-08-03 2016-07-22 导电性组合物

Publications (1)

Publication Number Publication Date
CN107710336A true CN107710336A (zh) 2018-02-16

Family

ID=57942904

Family Applications (2)

Application Number Title Priority Date Filing Date
CN202110668371.7A Active CN113249055B (zh) 2015-08-03 2016-07-22 导电性组合物
CN201680034167.7A Pending CN107710336A (zh) 2015-08-03 2016-07-22 导电性组合物

Family Applications Before (1)

Application Number Title Priority Date Filing Date
CN202110668371.7A Active CN113249055B (zh) 2015-08-03 2016-07-22 导电性组合物

Country Status (9)

Country Link
US (1) US10689550B2 (zh)
EP (1) EP3333856A4 (zh)
JP (1) JP6655605B2 (zh)
KR (1) KR102019761B1 (zh)
CN (2) CN113249055B (zh)
MY (1) MY192916A (zh)
PH (1) PH12018500249A1 (zh)
SG (1) SG11201706655VA (zh)
WO (1) WO2017022523A1 (zh)

Cited By (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108473831A (zh) * 2016-02-10 2018-08-31 古河电气工业株式会社 导电性粘接膜及使用其的切割芯片接合膜
US10529665B2 (en) 2017-08-10 2020-01-07 International Business Machines Corporation High-density interconnecting adhesive tape
US11066577B2 (en) 2016-02-10 2021-07-20 Furukawa Electric Co., Ltd. Electrically conductive adhesive film and dicing-die bonding film using the same
US11114308B2 (en) 2018-09-25 2021-09-07 International Business Machines Corporation Controlling of height of high-density interconnection structure on substrate
US11136479B2 (en) 2016-02-10 2021-10-05 Furukawa Electric Co., Ltd. Electrically conductive adhesive film and dicing-die bonding film using the same
US11193047B2 (en) 2016-02-10 2021-12-07 Furukawa Electric Co., Ltd. Electrically conductive adhesive film and dicing-die bonding film using the same
CN114174067A (zh) * 2019-08-01 2022-03-11 琳得科株式会社 带支撑片的膜状烧成材料、辊体、层叠体及装置的制造方法
US11306225B2 (en) 2016-02-10 2022-04-19 Furukawa Electric Co., Ltd. Electrically conductive adhesive agent composition, and electrically conductive adhesive film and dicing-die-bonding film using the same
US11747365B2 (en) 2019-01-15 2023-09-05 Kabushiki Kaisha Nihon Micronics Probe substrate and electrical connecting apparatus

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2017069559A (ja) * 2015-09-30 2017-04-06 日東電工株式会社 パワー半導体装置の製造方法
JP2017069558A (ja) * 2015-09-30 2017-04-06 日東電工株式会社 パワー半導体装置の製造方法

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10261319A (ja) * 1997-03-18 1998-09-29 Sumitomo Bakelite Co Ltd 導電性銅ペースト組成物
JP2004189954A (ja) * 2002-12-13 2004-07-08 Ricoh Co Ltd 熱硬化型導電性接着剤
JP2004355933A (ja) * 2003-05-28 2004-12-16 Nof Corp 導電性ペースト、配線板の製造方法および配線板
CN1957040A (zh) * 2004-05-21 2007-05-02 昭和电工株式会社 导电组合物及其应用
CN101542021A (zh) * 2006-09-07 2009-09-23 恩索恩公司 传导聚合物的沉积和非传导基材的金属化
CN101636463A (zh) * 2007-10-29 2010-01-27 住友电木株式会社 半导体用粘着剂组合物和使用该组合物制造的半导体装置

Family Cites Families (18)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3532749B2 (ja) * 1997-12-29 2004-05-31 株式会社巴川製紙所 導電性組成物、それを用いた導電性接着剤
JP3800977B2 (ja) 2001-04-11 2006-07-26 株式会社日立製作所 Ｚｎ−Ａｌ系はんだを用いた製品
JP4609296B2 (ja) 2005-12-05 2011-01-12 株式会社日立製作所 高温半田及び高温半田ペースト材、及びそれを用いたパワー半導体装置
KR20090115797A (ko) * 2007-02-20 2009-11-06 바스프 에스이 고굴절률 단량체, 이의 조성물 및 용도
JP4489799B2 (ja) * 2007-08-27 2010-06-23 セイコーエプソン株式会社 電気泳動表示装置用シート、その製造方法およびその用途
WO2009057530A1 (ja) * 2007-10-29 2009-05-07 Sumitomo Bakelite Co., Ltd. 半導体用接着剤組成物およびそれを用いて製造した半導体装置
JP5266797B2 (ja) * 2008-03-04 2013-08-21 住友ベークライト株式会社 樹脂組成物、接着剤層、及びそれらを用いて作製した半導体装置
JP4352282B1 (ja) * 2008-10-24 2009-10-28 住友ベークライト株式会社 半導体用接着剤組成物およびそれを用いて製造した半導体装置
JP2010221260A (ja) * 2009-03-24 2010-10-07 Mitsubishi Materials Corp はんだ粉末及び該粉末を用いたはんだペースト
EP2412743B1 (en) * 2009-03-27 2020-08-19 Hitachi Chemical Company, Ltd. Thermosetting resin composition, and prepreg, insulating film with support, laminate plate, and printed wiring board, each obtained using same
JP5580701B2 (ja) * 2010-09-13 2014-08-27 日東電工株式会社 ダイシング・ダイボンドフィルム
EP2431438B1 (en) * 2010-09-20 2012-11-28 Henkel AG & Co. KGaA Electrically conductive adhesives
US20140120356A1 (en) 2012-06-18 2014-05-01 Ormet Circuits, Inc. Conductive film adhesive
JP2014049621A (ja) * 2012-08-31 2014-03-17 Hitachi Chemical Co Ltd ウェハ加工用テープ及びウェハ加工用テープの製造方法
JP6069071B2 (ja) 2013-03-29 2017-01-25 ナミックス株式会社 樹脂組成物
KR102383625B1 (ko) * 2013-12-20 2022-04-05 미쓰비시마테리알덴시카세이가부시키가이샤 은 피복 도전성 입자, 도전성 페이스트 및 도전성 막
JPWO2016063813A1 (ja) * 2014-10-21 2017-08-03 日本電気株式会社 二次電池用電極およびこれを用いた二次電池
JP5989928B1 (ja) * 2016-02-10 2016-09-07 古河電気工業株式会社 導電性接着フィルムおよびこれを用いたダイシング・ダイボンディングフィルム

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH10261319A (ja) * 1997-03-18 1998-09-29 Sumitomo Bakelite Co Ltd 導電性銅ペースト組成物
JP2004189954A (ja) * 2002-12-13 2004-07-08 Ricoh Co Ltd 熱硬化型導電性接着剤
JP2004355933A (ja) * 2003-05-28 2004-12-16 Nof Corp 導電性ペースト、配線板の製造方法および配線板
CN1957040A (zh) * 2004-05-21 2007-05-02 昭和电工株式会社 导电组合物及其应用
CN101542021A (zh) * 2006-09-07 2009-09-23 恩索恩公司 传导聚合物的沉积和非传导基材的金属化
CN101636463A (zh) * 2007-10-29 2010-01-27 住友电木株式会社 半导体用粘着剂组合物和使用该组合物制造的半导体装置

Cited By (13)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US11136479B2 (en) 2016-02-10 2021-10-05 Furukawa Electric Co., Ltd. Electrically conductive adhesive film and dicing-die bonding film using the same
CN108473831B (zh) * 2016-02-10 2021-07-13 古河电气工业株式会社 导电性粘接膜及使用其的切割芯片接合膜
US11066577B2 (en) 2016-02-10 2021-07-20 Furukawa Electric Co., Ltd. Electrically conductive adhesive film and dicing-die bonding film using the same
CN108473831A (zh) * 2016-02-10 2018-08-31 古河电气工业株式会社 导电性粘接膜及使用其的切割芯片接合膜
US11193047B2 (en) 2016-02-10 2021-12-07 Furukawa Electric Co., Ltd. Electrically conductive adhesive film and dicing-die bonding film using the same
US11230649B2 (en) 2016-02-10 2022-01-25 Furukawa Electric Co., Ltd. Electrically conductive adhesive film and dicing-die bonding film using the same
US11306225B2 (en) 2016-02-10 2022-04-19 Furukawa Electric Co., Ltd. Electrically conductive adhesive agent composition, and electrically conductive adhesive film and dicing-die-bonding film using the same
US10529665B2 (en) 2017-08-10 2020-01-07 International Business Machines Corporation High-density interconnecting adhesive tape
US10622311B2 (en) 2017-08-10 2020-04-14 International Business Machines Corporation High-density interconnecting adhesive tape
US11114308B2 (en) 2018-09-25 2021-09-07 International Business Machines Corporation Controlling of height of high-density interconnection structure on substrate
US12087596B2 (en) 2018-09-25 2024-09-10 International Business Machines Corporation Controlling of height of high-density interconnection structure on substrate
US11747365B2 (en) 2019-01-15 2023-09-05 Kabushiki Kaisha Nihon Micronics Probe substrate and electrical connecting apparatus
CN114174067A (zh) * 2019-08-01 2022-03-11 琳得科株式会社 带支撑片的膜状烧成材料、辊体、层叠体及装置的制造方法

Also Published As

Publication number Publication date
SG11201706655VA (en) 2017-09-28
PH12018500249A1 (en) 2018-08-13
EP3333856A4 (en) 2018-12-26
JP6655605B2 (ja) 2020-02-26
CN113249055A (zh) 2021-08-13
KR102019761B1 (ko) 2019-09-09
US20170369746A1 (en) 2017-12-28
KR20170084287A (ko) 2017-07-19
JPWO2017022523A1 (ja) 2018-05-24
EP3333856A1 (en) 2018-06-13
CN113249055B (zh) 2024-02-13
WO2017022523A1 (ja) 2017-02-09
MY192916A (en) 2022-09-15
US10689550B2 (en) 2020-06-23

Similar Documents

Publication Publication Date Title
CN107710336A (zh) 导电性组合物
KR102190150B1 (ko) 도전성 접착 필름 및 이를 이용한 다이싱·다이본딩 필름
KR102222304B1 (ko) 도전성 접착 필름 및 이를 이용한 다이싱·다이본딩 필름
JP5989928B1 (ja) 導電性接着フィルムおよびこれを用いたダイシング・ダイボンディングフィルム
KR102190149B1 (ko) 도전성 접착제 조성물 및 이를 이용한 도전성 접착 필름 및 다이싱·다이본딩 필름
JP6462702B2 (ja) 導電性接着フィルムおよびダイシングダイボンディングフィルム
KR102190151B1 (ko) 도전성 접착 필름 및 이를 이용한 다이싱·다이본딩 필름
TWI744820B (zh) 含有金屬粒子之組合物及導電性接著膜

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication
RJ01 Rejection of invention patent application after publication

Application publication date: 20180216