WO2017022523A1 - 導電性組成物 - Google Patents
導電性組成物 Download PDFInfo
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- WO2017022523A1 WO2017022523A1 PCT/JP2016/071556 JP2016071556W WO2017022523A1 WO 2017022523 A1 WO2017022523 A1 WO 2017022523A1 JP 2016071556 W JP2016071556 W JP 2016071556W WO 2017022523 A1 WO2017022523 A1 WO 2017022523A1
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- 239000000203 mixture Substances 0.000 title claims abstract description 62
- -1 sulfide compound Chemical class 0.000 claims abstract description 36
- 239000002923 metal particle Substances 0.000 claims abstract description 24
- 239000002184 metal Substances 0.000 claims abstract description 17
- 229910052751 metal Inorganic materials 0.000 claims abstract description 17
- 229910052718 tin Inorganic materials 0.000 claims abstract description 15
- 229910052759 nickel Inorganic materials 0.000 claims abstract description 14
- 229910052802 copper Inorganic materials 0.000 claims abstract description 13
- 125000000962 organic group Chemical group 0.000 claims abstract description 8
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 claims abstract description 4
- 239000002390 adhesive tape Substances 0.000 claims abstract description 4
- 229910052799 carbon Inorganic materials 0.000 claims abstract description 4
- 239000002313 adhesive film Substances 0.000 claims description 30
- 229920005989 resin Polymers 0.000 claims description 30
- 239000011347 resin Substances 0.000 claims description 30
- 239000000853 adhesive Substances 0.000 claims description 19
- 230000001070 adhesive effect Effects 0.000 claims description 19
- 229920001187 thermosetting polymer Polymers 0.000 claims description 17
- 238000005245 sintering Methods 0.000 claims description 16
- 229910052709 silver Inorganic materials 0.000 claims description 11
- PEEHTFAAVSWFBL-UHFFFAOYSA-N Maleimide Chemical group O=C1NC(=O)C=C1 PEEHTFAAVSWFBL-UHFFFAOYSA-N 0.000 claims description 7
- 150000001875 compounds Chemical class 0.000 claims description 7
- 238000000113 differential scanning calorimetry Methods 0.000 claims description 7
- 239000003822 epoxy resin Substances 0.000 claims description 7
- 229910052737 gold Inorganic materials 0.000 claims description 7
- 229920000647 polyepoxide Polymers 0.000 claims description 7
- 125000003647 acryloyl group Chemical group O=C([*])C([H])=C([H])[H] 0.000 claims description 6
- 229910052738 indium Inorganic materials 0.000 claims description 5
- 239000000463 material Substances 0.000 claims description 5
- 150000002739 metals Chemical class 0.000 claims description 5
- 229910052725 zinc Inorganic materials 0.000 claims description 5
- 229910052782 aluminium Inorganic materials 0.000 claims description 4
- ZBCBWPMODOFKDW-UHFFFAOYSA-N diethanolamine Chemical compound OCCNCCO ZBCBWPMODOFKDW-UHFFFAOYSA-N 0.000 claims description 4
- 125000002887 hydroxy group Chemical group [H]O* 0.000 claims description 4
- 229910000765 intermetallic Inorganic materials 0.000 claims description 4
- 125000003396 thiol group Chemical group [H]S* 0.000 claims description 4
- 229910052719 titanium Inorganic materials 0.000 claims description 4
- 125000005462 imide group Chemical group 0.000 claims description 3
- ISWSIDIOOBJBQZ-UHFFFAOYSA-N phenol group Chemical group C1(=CC=CC=C1)O ISWSIDIOOBJBQZ-UHFFFAOYSA-N 0.000 claims description 3
- 125000002924 primary amino group Chemical group [H]N([H])* 0.000 claims description 3
- 125000000467 secondary amino group Chemical group [H]N([*:1])[*:2] 0.000 claims description 3
- 125000004434 sulfur atom Chemical group 0.000 claims description 3
- 125000000391 vinyl group Chemical group [H]C([*])=C([H])[H] 0.000 claims description 3
- 125000004185 ester group Chemical group 0.000 claims 1
- FSQQTNAZHBEJLS-UPHRSURJSA-N maleamic acid Chemical group NC(=O)\C=C/C(O)=O FSQQTNAZHBEJLS-UPHRSURJSA-N 0.000 claims 1
- 239000004065 semiconductor Substances 0.000 abstract description 26
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 abstract description 5
- 125000004122 cyclic group Chemical group 0.000 abstract description 2
- 229910000679 solder Inorganic materials 0.000 description 28
- 230000004907 flux Effects 0.000 description 17
- 238000000034 method Methods 0.000 description 16
- 239000010949 copper Substances 0.000 description 11
- 238000002844 melting Methods 0.000 description 10
- 230000008018 melting Effects 0.000 description 10
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 9
- 230000008569 process Effects 0.000 description 9
- 238000010521 absorption reaction Methods 0.000 description 8
- 239000004820 Pressure-sensitive adhesive Substances 0.000 description 7
- XQUPVDVFXZDTLT-UHFFFAOYSA-N 1-[4-[[4-(2,5-dioxopyrrol-1-yl)phenyl]methyl]phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C(C=C1)=CC=C1CC1=CC=C(N2C(C=CC2=O)=O)C=C1 XQUPVDVFXZDTLT-UHFFFAOYSA-N 0.000 description 6
- 239000000523 sample Substances 0.000 description 6
- 239000000758 substrate Substances 0.000 description 6
- VZCYOOQTPOCHFL-UHFFFAOYSA-N trans-butenedioic acid Natural products OC(=O)C=CC(O)=O VZCYOOQTPOCHFL-UHFFFAOYSA-N 0.000 description 6
- 206010040844 Skin exfoliation Diseases 0.000 description 5
- 150000001732 carboxylic acid derivatives Chemical class 0.000 description 5
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 4
- 238000006243 chemical reaction Methods 0.000 description 4
- 238000004140 cleaning Methods 0.000 description 4
- 230000000052 comparative effect Effects 0.000 description 4
- 238000001723 curing Methods 0.000 description 4
- 238000009792 diffusion process Methods 0.000 description 4
- 230000007613 environmental effect Effects 0.000 description 4
- 239000010410 layer Substances 0.000 description 4
- VZCYOOQTPOCHFL-UPHRSURJSA-N maleic acid Chemical group OC(=O)\C=C/C(O)=O VZCYOOQTPOCHFL-UPHRSURJSA-N 0.000 description 4
- 229920003192 poly(bis maleimide) Polymers 0.000 description 4
- 239000004925 Acrylic resin Substances 0.000 description 3
- 229920000178 Acrylic resin Polymers 0.000 description 3
- 239000004593 Epoxy Substances 0.000 description 3
- 239000002253 acid Substances 0.000 description 3
- 150000008064 anhydrides Chemical class 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 125000000524 functional group Chemical group 0.000 description 3
- RAXXELZNTBOGNW-UHFFFAOYSA-N imidazole Natural products C1=CNC=N1 RAXXELZNTBOGNW-UHFFFAOYSA-N 0.000 description 3
- 150000002500 ions Chemical class 0.000 description 3
- 238000005304 joining Methods 0.000 description 3
- 229910044991 metal oxide Inorganic materials 0.000 description 3
- 150000004706 metal oxides Chemical class 0.000 description 3
- 230000005855 radiation Effects 0.000 description 3
- 150000003568 thioethers Chemical class 0.000 description 3
- IPJGAEWUPXWFPL-UHFFFAOYSA-N 1-[3-(2,5-dioxopyrrol-1-yl)phenyl]pyrrole-2,5-dione Chemical compound O=C1C=CC(=O)N1C1=CC=CC(N2C(C=CC2=O)=O)=C1 IPJGAEWUPXWFPL-UHFFFAOYSA-N 0.000 description 2
- BTXXTMOWISPQSJ-UHFFFAOYSA-N 4,4,4-trifluorobutan-2-one Chemical compound CC(=O)CC(F)(F)F BTXXTMOWISPQSJ-UHFFFAOYSA-N 0.000 description 2
- BQACOLQNOUYJCE-FYZZASKESA-N Abietic acid Natural products CC(C)C1=CC2=CC[C@]3(C)[C@](C)(CCC[C@@]3(C)C(=O)O)[C@H]2CC1 BQACOLQNOUYJCE-FYZZASKESA-N 0.000 description 2
- RSWGJHLUYNHPMX-UHFFFAOYSA-N Abietic-Saeure Natural products C12CCC(C(C)C)=CC2=CCC2C1(C)CCCC2(C)C(O)=O RSWGJHLUYNHPMX-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- OFOBLEOULBTSOW-UHFFFAOYSA-N Propanedioic acid Natural products OC(=O)CC(O)=O OFOBLEOULBTSOW-UHFFFAOYSA-N 0.000 description 2
- NIXOWILDQLNWCW-UHFFFAOYSA-N acrylic acid group Chemical group C(C=C)(=O)O NIXOWILDQLNWCW-UHFFFAOYSA-N 0.000 description 2
- 239000012790 adhesive layer Substances 0.000 description 2
- 229910045601 alloy Inorganic materials 0.000 description 2
- 239000000956 alloy Substances 0.000 description 2
- GCAIEATUVJFSMC-UHFFFAOYSA-N benzene-1,2,3,4-tetracarboxylic acid Chemical compound OC(=O)C1=CC=C(C(O)=O)C(C(O)=O)=C1C(O)=O GCAIEATUVJFSMC-UHFFFAOYSA-N 0.000 description 2
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 description 2
- PXKLMJQFEQBVLD-UHFFFAOYSA-N bisphenol F Chemical compound C1=CC(O)=CC=C1CC1=CC=C(O)C=C1 PXKLMJQFEQBVLD-UHFFFAOYSA-N 0.000 description 2
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000011109 contamination Methods 0.000 description 2
- 238000001035 drying Methods 0.000 description 2
- MNUOZFHYBCRUOD-UHFFFAOYSA-N hydroxyphthalic acid Natural products OC(=O)C1=CC=CC(O)=C1C(O)=O MNUOZFHYBCRUOD-UHFFFAOYSA-N 0.000 description 2
- 239000007788 liquid Substances 0.000 description 2
- 239000011976 maleic acid Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 238000000465 moulding Methods 0.000 description 2
- 239000005011 phenolic resin Substances 0.000 description 2
- 238000007747 plating Methods 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- SPNAQSNLZHHUIJ-UHFFFAOYSA-N s-[4-[4-(2-methylprop-2-enoylsulfanyl)phenyl]sulfanylphenyl] 2-methylprop-2-enethioate Chemical compound C1=CC(SC(=O)C(=C)C)=CC=C1SC1=CC=C(SC(=O)C(C)=C)C=C1 SPNAQSNLZHHUIJ-UHFFFAOYSA-N 0.000 description 2
- 238000007650 screen-printing Methods 0.000 description 2
- 238000007789 sealing Methods 0.000 description 2
- 239000004332 silver Substances 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 239000002966 varnish Substances 0.000 description 2
- RBORURQQJIQWBS-QVRNUERCSA-N (4ar,6r,7r,7as)-6-(6-amino-8-bromopurin-9-yl)-2-hydroxy-2-sulfanylidene-4a,6,7,7a-tetrahydro-4h-furo[3,2-d][1,3,2]dioxaphosphinin-7-ol Chemical compound C([C@H]1O2)OP(O)(=S)O[C@H]1[C@@H](O)[C@@H]2N1C(N=CN=C2N)=C2N=C1Br RBORURQQJIQWBS-QVRNUERCSA-N 0.000 description 1
- OMIGHNLMNHATMP-UHFFFAOYSA-N 2-hydroxyethyl prop-2-enoate Chemical compound OCCOC(=O)C=C OMIGHNLMNHATMP-UHFFFAOYSA-N 0.000 description 1
- OBVKBOLDEFIQDP-UHFFFAOYSA-N 2-methylsulfanyl-10h-phenothiazine Chemical compound C1=CC=C2NC3=CC(SC)=CC=C3SC2=C1 OBVKBOLDEFIQDP-UHFFFAOYSA-N 0.000 description 1
- ZCYVEMRRCGMTRW-UHFFFAOYSA-N 7553-56-2 Chemical compound [I] ZCYVEMRRCGMTRW-UHFFFAOYSA-N 0.000 description 1
- 239000004342 Benzoyl peroxide Substances 0.000 description 1
- OMPJBNCRMGITSC-UHFFFAOYSA-N Benzoylperoxide Chemical compound C=1C=CC=CC=1C(=O)OOC(=O)C1=CC=CC=C1 OMPJBNCRMGITSC-UHFFFAOYSA-N 0.000 description 1
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 208000025599 Heat Stress disease Diseases 0.000 description 1
- 239000002841 Lewis acid Substances 0.000 description 1
- CERQOIWHTDAKMF-UHFFFAOYSA-N Methacrylic acid Chemical compound CC(=C)C(O)=O CERQOIWHTDAKMF-UHFFFAOYSA-N 0.000 description 1
- 229920003355 Novatec® Polymers 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- UWHCKJMYHZGTIT-UHFFFAOYSA-N Tetraethylene glycol, Natural products OCCOCCOCCOCCO UWHCKJMYHZGTIT-UHFFFAOYSA-N 0.000 description 1
- 150000008065 acid anhydrides Chemical class 0.000 description 1
- 230000002411 adverse Effects 0.000 description 1
- 150000001412 amines Chemical class 0.000 description 1
- 229910052787 antimony Inorganic materials 0.000 description 1
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 description 1
- 229910052785 arsenic Inorganic materials 0.000 description 1
- RQNWIZPPADIBDY-UHFFFAOYSA-N arsenic atom Chemical compound [As] RQNWIZPPADIBDY-UHFFFAOYSA-N 0.000 description 1
- 230000004888 barrier function Effects 0.000 description 1
- 235000019400 benzoyl peroxide Nutrition 0.000 description 1
- 229910052797 bismuth Inorganic materials 0.000 description 1
- 125000004432 carbon atom Chemical group C* 0.000 description 1
- 239000011203 carbon fibre reinforced carbon Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 229920001577 copolymer Polymers 0.000 description 1
- 230000008878 coupling Effects 0.000 description 1
- 238000010168 coupling process Methods 0.000 description 1
- 238000005859 coupling reaction Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 150000004985 diamines Chemical class 0.000 description 1
- QGBSISYHAICWAH-UHFFFAOYSA-N dicyandiamide Chemical compound NC(N)=NC#N QGBSISYHAICWAH-UHFFFAOYSA-N 0.000 description 1
- LTYMSROWYAPPGB-UHFFFAOYSA-N diphenyl sulfide Chemical compound C=1C=CC=CC=1SC1=CC=CC=C1 LTYMSROWYAPPGB-UHFFFAOYSA-N 0.000 description 1
- 229920001971 elastomer Polymers 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 230000005496 eutectics Effects 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 238000001125 extrusion Methods 0.000 description 1
- 230000005669 field effect Effects 0.000 description 1
- 238000013007 heat curing Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 150000003949 imides Chemical class 0.000 description 1
- 239000011256 inorganic filler Substances 0.000 description 1
- 229910003475 inorganic filler Inorganic materials 0.000 description 1
- 229910052740 iodine Inorganic materials 0.000 description 1
- 239000011630 iodine Substances 0.000 description 1
- 230000002427 irreversible effect Effects 0.000 description 1
- IQPQWNKOIGAROB-UHFFFAOYSA-N isocyanate group Chemical group [N-]=C=O IQPQWNKOIGAROB-UHFFFAOYSA-N 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- RLAWWYSOJDYHDC-BZSNNMDCSA-N lisinopril Chemical compound C([C@H](N[C@@H](CCCCN)C(=O)N1[C@@H](CCC1)C(O)=O)C(O)=O)CC1=CC=CC=C1 RLAWWYSOJDYHDC-BZSNNMDCSA-N 0.000 description 1
- 229920001684 low density polyethylene Polymers 0.000 description 1
- 239000004702 low-density polyethylene Substances 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 239000000155 melt Substances 0.000 description 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 238000013508 migration Methods 0.000 description 1
- 230000005012 migration Effects 0.000 description 1
- 238000005065 mining Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- ANISOHQJBAQUQP-UHFFFAOYSA-N octyl prop-2-enoate Chemical compound CCCCCCCCOC(=O)C=C ANISOHQJBAQUQP-UHFFFAOYSA-N 0.000 description 1
- 239000013034 phenoxy resin Substances 0.000 description 1
- 229920006287 phenoxy resin Polymers 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 229920000768 polyamine Polymers 0.000 description 1
- 229920000573 polyethylene Polymers 0.000 description 1
- 229920001228 polyisocyanate Polymers 0.000 description 1
- 239000005056 polyisocyanate Substances 0.000 description 1
- 239000003505 polymerization initiator Substances 0.000 description 1
- 238000006116 polymerization reaction Methods 0.000 description 1
- 229920002635 polyurethane Polymers 0.000 description 1
- 239000004814 polyurethane Substances 0.000 description 1
- 239000000843 powder Substances 0.000 description 1
- 238000003825 pressing Methods 0.000 description 1
- 238000007639 printing Methods 0.000 description 1
- 230000002250 progressing effect Effects 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 230000035484 reaction time Effects 0.000 description 1
- 239000012508 resin bead Substances 0.000 description 1
- 239000011342 resin composition Substances 0.000 description 1
- LBROROBTVMUJEB-UHFFFAOYSA-N s-[2-[2-(2-methylprop-2-enoylsulfanyl)ethylsulfanyl]ethyl] 2-methylprop-2-enethioate Chemical compound CC(=C)C(=O)SCCSCCSC(=O)C(C)=C LBROROBTVMUJEB-UHFFFAOYSA-N 0.000 description 1
- 230000035939 shock Effects 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000012360 testing method Methods 0.000 description 1
- GVIJJXMXTUZIOD-UHFFFAOYSA-N thianthrene Chemical compound C1=CC=C2SC3=CC=CC=C3SC2=C1 GVIJJXMXTUZIOD-UHFFFAOYSA-N 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 238000009736 wetting Methods 0.000 description 1
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- C09J9/00—Adhesives characterised by their physical nature or the effects produced, e.g. glue sticks
- C09J9/02—Electrically-conducting adhesives
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/1075—Partially aromatic polyimides
- C08G73/1082—Partially aromatic polyimides wholly aromatic in the tetracarboxylic moiety
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08G—MACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
- C08G73/10—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
- C08G73/12—Unsaturated polyimide precursors
- C08G73/128—Unsaturated polyimide precursors the unsaturated precursors containing heterocyclic moieties in the main chain
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K3/00—Use of inorganic substances as compounding ingredients
- C08K3/10—Metal compounds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08K—Use of inorganic or non-macromolecular organic substances as compounding ingredients
- C08K5/00—Use of organic ingredients
- C08K5/16—Nitrogen-containing compounds
-
- C—CHEMISTRY; METALLURGY
- C08—ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
- C08L—COMPOSITIONS OF MACROMOLECULAR COMPOUNDS
- C08L63/00—Compositions of epoxy resins; Compositions of derivatives of epoxy resins
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- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
- C09J11/02—Non-macromolecular additives
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- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
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- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
- C09J11/02—Non-macromolecular additives
- C09J11/04—Non-macromolecular additives inorganic
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- C09J11/00—Features of adhesives not provided for in group C09J9/00, e.g. additives
- C09J11/02—Non-macromolecular additives
- C09J11/06—Non-macromolecular additives organic
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- C—CHEMISTRY; METALLURGY
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- C09J163/00—Adhesives based on epoxy resins; Adhesives based on derivatives of epoxy resins
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- C09J179/00—Adhesives based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen, with or without oxygen, or carbon only, not provided for in groups C09J161/00 - C09J177/00
- C09J179/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
- C09J179/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
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- C09J179/00—Adhesives based on macromolecular compounds obtained by reactions forming in the main chain of the macromolecule a linkage containing nitrogen, with or without oxygen, or carbon only, not provided for in groups C09J161/00 - C09J177/00
- C09J179/04—Polycondensates having nitrogen-containing heterocyclic rings in the main chain; Polyhydrazides; Polyamide acids or similar polyimide precursors
- C09J179/08—Polyimides; Polyester-imides; Polyamide-imides; Polyamide acids or similar polyimide precursors
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- C09J7/20—Adhesives in the form of films or foils characterised by their carriers
- C09J7/22—Plastics; Metallised plastics
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- C09J7/35—Heat-activated
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- H—ELECTRICITY
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- H01B—CABLES; CONDUCTORS; INSULATORS; SELECTION OF MATERIALS FOR THEIR CONDUCTIVE, INSULATING OR DIELECTRIC PROPERTIES
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- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/27—Manufacturing methods
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- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L24/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L24/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
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- C08K3/00—Use of inorganic substances as compounding ingredients
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- C08K3/00—Use of inorganic substances as compounding ingredients
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- C08K5/00—Use of organic ingredients
- C08K5/36—Sulfur-, selenium-, or tellurium-containing compounds
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- C08K5/00—Use of organic ingredients
- C08K5/36—Sulfur-, selenium-, or tellurium-containing compounds
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- C08K5/00—Use of organic ingredients
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- C09J2301/40—Additional features of adhesives in the form of films or foils characterized by the presence of essential components
- C09J2301/408—Additional features of adhesives in the form of films or foils characterized by the presence of essential components additives as essential feature of the adhesive layer
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
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- H01L2221/68327—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support used during dicing or grinding
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
- H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere
- H01L2221/683—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L2221/68304—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere for supporting or gripping using temporarily an auxiliary support
- H01L2221/68381—Details of chemical or physical process used for separating the auxiliary support from a device or wafer
- H01L2221/68386—Separation by peeling
- H01L2221/6839—Separation by peeling using peeling wedge or knife or bar
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/04026—Bonding areas specifically adapted for layer connectors
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/05—Structure, shape, material or disposition of the bonding areas prior to the connecting process of an individual bonding area
- H01L2224/0554—External layer
- H01L2224/05599—Material
- H01L2224/056—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/05638—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 950°C and less than 1550°C
- H01L2224/05644—Gold [Au] as principal constituent
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/27—Manufacturing methods
- H01L2224/274—Manufacturing methods by blanket deposition of the material of the layer connector
- H01L2224/2743—Manufacturing methods by blanket deposition of the material of the layer connector in solid form
- H01L2224/27436—Lamination of a preform, e.g. foil, sheet or layer
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/2919—Material with a principal constituent of the material being a polymer, e.g. polyester, phenolic based polymer, epoxy
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29199—Material of the matrix
- H01L2224/292—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29201—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/29209—Indium [In] as principal constituent
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29199—Material of the matrix
- H01L2224/292—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29201—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of less than 400°C
- H01L2224/29211—Tin [Sn] as principal constituent
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
- H01L2224/29199—Material of the matrix
- H01L2224/292—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
- H01L2224/29217—Material of the matrix with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof the principal constituent melting at a temperature of greater than or equal to 400°C and less than 950°C
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/26—Layer connectors, e.g. plate connectors, solder or adhesive layers; Manufacturing methods related thereto
- H01L2224/28—Structure, shape, material or disposition of the layer connectors prior to the connecting process
- H01L2224/29—Structure, shape, material or disposition of the layer connectors prior to the connecting process of an individual layer connector
- H01L2224/29001—Core members of the layer connector
- H01L2224/29099—Material
- H01L2224/29198—Material with a principal constituent of the material being a combination of two or more materials in the form of a matrix with a filler, i.e. being a hybrid material, e.g. segmented structures, foams
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Definitions
- the present invention relates to a conductive composition. Specifically, the present invention relates to a conductive paste, a conductive adhesive composition, a conductive adhesive film comprising the conductive paste, and a dicing die bonding film formed by bonding the adhesive paste and an adhesive tape.
- Lead-free solder has been widely used in the past for joining semiconductor power devices such as IGBT (Insulated Gate Bipolar Transistor) and MOS-FET (Field Effect Transistor) to metal lead frames. Is regarded as a problem.
- semiconductor power devices such as IGBT (Insulated Gate Bipolar Transistor) and MOS-FET (Field Effect Transistor)
- IGBT Insulated Gate Bipolar Transistor
- MOS-FET Field Effect Transistor
- diffusion-sintered solder such as Cu / Sn solder
- these diffusion sintered solders have a low melting point during mounting, they have an irreversible high melting point after the diffusion sintering reaction, so both heat resistance and mounting reliability are better than conventional lead-free solders. It is advantageous.
- the wettability is slightly inferior to lead solder, so there is still a risk of solder removal when joining large-area elements of 5 mm ⁇ or more, and the sintered body is hard and brittle.
- the stress relaxation property is low, the heat fatigue resistance is low, and there is a disadvantage that the device life is shortened.
- Patent Document 4 describes that an adhesive composition that is preferably used for semiconductor devices and that uses silver as an inorganic filler uses thiol or thioether as a flux.
- silver is expensive and easy to ion migrate.
- An object of the present invention is to provide means that is excellent in heat resistance and mounting reliability, is lead-free, and has a low environmental load when a semiconductor power element is bonded to a metal lead frame.
- the present invention relates to a conductive composition containing as essential components at least a sulfide compound represented by the following general formula (1) and metal particles containing at least one of Cu, Sn, and Ni.
- R is an organic group containing at least carbon
- R ′ is the same or different organic group as R. R and R ′ may be bonded.
- the sulfide compound is preferably a compound containing two or more sulfur atoms in one molecule.
- the sulfide compound includes a vinyl group, an acryloyl group, a primary amino group, a secondary amino group, a phenolic hydroxyl group, a thiol group, a hydrosilyl group, a hydroboron group, a maleate group, a maleate amide group, and a maleate imide.
- a compound having at least one of the groups is preferable.
- the number average molecular weight of the sulfide compound is preferably 200 or more.
- the present invention also relates to the above conductive composition comprising at least the sulfide compound, metal particles, and a thermosetting resin.
- the thermosetting resin contains a maleic imide compound containing 2 units or more of imide groups in one molecule.
- the maleic imide compound contains a skeleton derived from a C10 or higher aliphatic amine.
- the number average molecular weight of the maleic imide compound is preferably 3000 or more.
- the thermosetting resin is preferably an epoxy resin.
- the metal particles contains any one of Cu, Ag, Au, Ni, and Sn. Furthermore, it is preferable that the metal particles are a mixture of two or more metals including a combination capable of forming an intermetallic compound with each other. Furthermore, it is preferable that at least two of the two or more types of metal particles are selected from Cu, Ag, Ni, Ti, Al, Sn, Zn, Au, and In.
- the present invention is characterized in that at least one endothermic peak observed by DSC (differential scanning calorimetry) is present at 100 ° C. to 250 ° C. before sintering and is not observed after sintering. And relates to the conductive composition.
- DSC differential scanning calorimetry
- this invention relates to the conductive adhesive composition formed using the said conductive composition.
- the present invention also relates to a conductive adhesive film obtained by forming the conductive adhesive composition on a substrate by drying, extruding, or other methods.
- the present invention relates to a dicing die bonding film formed by laminating the conductive adhesive film and an adhesive tape.
- a conductive adhesive film, or a dicing die bonding film in combination with a dicing tape By using a conductive paste using the conductive composition provided by the present invention, a conductive adhesive film, or a dicing die bonding film in combination with a dicing tape, the heat resistance after sintering can be achieved while being mounted at a low temperature. Excellent solderability, no solder removal failure, excellent heat-resistance fatigue and reflow resistance after moisture absorption even if the flux cleaning process is omitted, power semiconductors can be electrically bonded to lead frames, etc. It was possible to provide means.
- the conductive composition of the present invention includes at least a sulfide compound represented by the following general formula (1) and metal particles containing at least one of Cu, Sn, and Ni as essential components.
- R is an organic group containing at least carbon
- R ′ is the same or different organic group as R.
- R and R ′ may be bonded, that is, may be a so-called cyclic sulfide.
- the metal particles are responsible for electrical conductivity and thermal conductivity, and the sulfide compound represented by the general formula (1) functions as a so-called “flux” that helps its function by removing the oxide film on the surface of the metal particles.
- the sulfide compound represented by the general formula (1) functions as a so-called “flux” that helps its function by removing the oxide film on the surface of the metal particles.
- the sulfide compound is preferably a compound containing two or more sulfur atoms in one molecule from the viewpoint of enhancing the reducing ability of the metal oxide film.
- the above sulfide compounds are vinyl group, acryloyl group, primary amino group, secondary amino group, phenolic hydroxyl group, thiol group, hydrosilyl group, hydroboron group, maleate group, maleate amide group, maleate imide.
- a compound having at least one functional group of a group is preferable, and further, a compound having an acryloyl group is more preferable from the viewpoint of easy curing.
- the number average molecular weight of the sulfide compound is preferably 200 or more from the viewpoint of suppressing bleed out during sintering.
- sulfide compounds include 2-methylthiophenothiazine, bis (4-methacryloylthiophenyl) sulfide, and bis (2-methacryloylthioethyl) sulfide.
- Such an acryloyl sulfide compound also acts as a thermosetting resin component capable of forming a copolymer with a maleimide resin.
- a flux component that is difficult to absorb moisture, has a sufficiently high molecular weight and is low in polymerization, and has little or no alcohol or carboxylic acid that easily absorbs moisture. Even if not, bleed-out risk can be reduced, and sufficient reliability, particularly reflow resistance after moisture absorption can be secured.
- the weight fraction of the sulfide compound in the conductive composition is preferably 1 to 10 wt%, more preferably 2 to 5 wt% from the viewpoint of sufficient metal oxide film removal ability.
- Metal particles As metal particles, it is preferable that at least one part contains any one of Cu, Ag, Au, Ni, and Sn.
- At least one part thereof includes a combination capable of forming an intermetallic compound with each other from the viewpoint of having heat resistance equal to or higher than the mounting temperature after sintering while lowering the mounting temperature.
- At least two kinds are selected from Cu, Ag, Ni, Ti, Al, Sn, Zn, Au, and In, for example, Cu or Ni or Ag and Sn or Zn and
- the combination of Ag and Sn, the combination of Ni or Sn or Al and Ti, the combination of Au and In, etc. are preferable, but the combination including Sn with a low melting point is preferable from the viewpoint of lowering the mounting temperature.
- Particularly preferred is a combination containing Cu or Ni and Sn.
- metals capable of forming the intermetallic compound may be added as necessary.
- other metal components may be added as necessary.
- the weight fraction of the metal particles in the conductive composition is preferably 70 to 96 wt%.
- the metal particles preferably contain as little lead, mercury, antimony and arsenic as possible, specifically less than 0.1 wt% in the conductive composition from the viewpoint of low environmental load.
- the component Before sintering, which will be described later after dicing, there is a melting point that can be attributed to at least one metal component observed as an endothermic peak by DSC, so that the component can be applied to the surface of the adherend at a low temperature. To be advantageous.
- the component has a high melting point due to a diffusion reaction between metals after sintering, so that it can withstand heat resistance after wire bonding with a high melting point lead-free solder or reflow treatment after mounting. Have sex.
- the mounting temperature is preferably 100 to 250 ° C, more preferably 100 to 200 ° C.
- the heat resistant temperature is preferably 250 ° C. or higher, more preferably 300 ° C. or higher.
- thermosetting resin The conductive composition in the present invention preferably further contains a thermosetting resin.
- the thermosetting resin has an effect of imparting relaxation properties to a film property before sintering and a stress generated by a thermal cycle after sintering.
- the thermosetting resin is a maleic imide resin (maleimide resin) or an epoxy resin containing a maleic imide compound containing 2 units or more of imide groups per molecule from the viewpoint of heat resistance and film properties when mixing metal particles.
- the maleic imide resin is obtained, for example, by condensing maleic acid or an anhydride thereof with diamine or polyamine, etc., and those containing a skeleton derived from C10 or higher aliphatic amine are preferable from the viewpoint of stress relaxation, Particularly preferably, it is C30 or more, and those having a skeleton as shown in the following general formula (2) are preferred.
- the maleic imide resin contains a skeleton derived from an acid component other than maleic acid, such as benzenetetracarboxylic acid or its anhydride, hydroxyphthalic acid bisether or its anhydride, etc. to adjust the molecular weight or Tg. May be.
- an acid component other than maleic acid such as benzenetetracarboxylic acid or its anhydride, hydroxyphthalic acid bisether or its anhydride, etc.
- Tg. benzenetetracarboxylic acid or its anhydride
- hydroxyphthalic acid bisether or its anhydride etc.
- Examples of the bismaleimide resin having such a structure include those shown in the following structural formula.
- C 36 has the following structure.
- the number average molecular weight of the maleic imide compound is preferably 3000 or more.
- epoxy As the thermosetting resin, bisphenol A type epoxy resin, bisphenol F type epoxy resin and combinations thereof are preferable from the viewpoint of balance between stress relaxation and film properties, and more preferably epoxy resin having a large molecular weight with them. It is a mixture with a phenoxy resin.
- an acid anhydride, a phenol resin, an amine, imidazole, dicyandiamide, or the like can be selected.
- the sintered body of the conductive composition of the present invention has a thermal fatigue characteristic due to the hardness and brittleness of the conventional lead-free solder made of only metal.
- the conductive composition of the present invention is used as an adhesive application, it is in the form of a film.
- a film For example, in a dicing process in which a power semiconductor element is attached to the back surface of a wafer and the wafer is divided into chips for each element. It is possible to divide the adhesive film together with the wafer, so that the adhesive film can be applied to the entire back surface of the device without excess or deficiency regardless of the problems caused by the liquid, such as the wettability of the solder, that is, wetting spread and protrusion. Can be easily implemented. Further, by adjusting the adhesive film with a predetermined thickness in advance, it is possible to control the height of the element after die bonding with higher accuracy than conventional solder or conductive paste.
- the conductive adhesive film of the present invention is formed by forming the above-described conductive composition of the present invention into a film shape.
- a molding method a method in which a varnish in which a conductive composition is dissolved and dispersed in a solvent is applied on a substrate and then dried, a melt coating method in which the conductive composition is melted at a high temperature and then applied to the substrate, A method of pressing a conductive composition together with a substrate at a high pressure, an extrusion method in which a conductive composition is melted and then extruded using an extruder, and then stretched, a screen mesh (screen printing), a metal plate (gravure plate), etc. Examples of the known method include, but are not limited to, a printing method in which the above varnish is filled and transferred.
- the adhesive film and the dicing tape can be bonded to the wafer at one time, and the process can be omitted.
- FIG. 1 is a cross-sectional view showing a dicing die bonding film 10 according to the present invention.
- the dicing die bonding film 10 is mainly composed of a dicing tape 12 and an adhesive film 13.
- the dicing die bonding film 10 is an example of a tape for semiconductor processing, and may be cut (precut) into a predetermined shape in advance according to a use process or an apparatus, or may be cut for each semiconductor wafer. It may be a long roll shape.
- the dicing tape 12 includes a support base 12a and an adhesive layer 12b formed thereon.
- the release treatment PET11 covers the dicing tape 12 and protects the pressure-sensitive adhesive layer 12b and the adhesive film 13.
- the support substrate 12a is preferably radiolucent, and specifically, plastic or rubber is usually used, and is not particularly limited as long as it transmits radiation.
- the base resin composition of the pressure-sensitive adhesive layer 12b is not particularly limited, and a normal radiation curable pressure-sensitive adhesive is used.
- An acrylic pressure-sensitive adhesive having a functional group capable of reacting with an isocyanate group such as a hydroxyl group is preferred.
- the acrylic pressure-sensitive adhesive preferably has an iodine value of 30 or less and has a radiation-curable carbon-carbon double bond structure.
- the configuration of the adhesive film 13 according to the present invention is a semiconductor adhesive that is a conductive adhesive film containing metal particles, a thermosetting resin, a Lewis acid compound or a thermal acid generator.
- a semiconductor adhesive that is a conductive adhesive film containing metal particles, a thermosetting resin, a Lewis acid compound or a thermal acid generator.
- the dicing die bonding film 10 of the present invention can be suitably used.
- the peeling treatment PET 11 is removed from the dicing die bonding film 10, and an adhesive film 13 is attached to the semiconductor wafer 1 and the side portion of the dicing tape 12 is fixed by the ring frame 20 as shown in FIG.
- the ring frame 20 is an example of a dicing frame.
- the adhesive film 13 is laminated on a portion of the dicing tape 12 where the semiconductor wafer 1 is bonded. There is no adhesive film 13 in the portion of the dicing tape 12 that contacts the ring frame 20.
- the semiconductor wafer 1 is diced into a predetermined size using the dicing blade 21 while the lower surface of the dicing tape 12 is sucked and fixed by the suction table 22 to manufacture a plurality of semiconductor chips 2.
- the tape push-up ring 30 is raised, the central portion of the dicing tape 12 is bent upward, and radiation such as ultraviolet rays is radiated.
- the adhesive strength of the dicing tape 12 is weakened.
- the push-up pin 31 is raised at a position corresponding to each semiconductor chip, and the semiconductor chip 2 is picked up by the suction collet 32.
- the picked-up semiconductor chip 2 is bonded to a supporting member such as the lead frame 4 or another semiconductor chip 2 (die bonding process), and as shown in FIG. A semiconductor device is obtained through steps such as resin molding, heat curing, and sintering.
- thermosetting resin mix blended with an electrically conductive composition
- it can also be used in the form of a paste for applications such as solder without blending a thermosetting resin.
- application by screen printing, a dispenser, or the like can be used for connection of electronic components.
- wt% shows weight%
- Examples 1 to 4 In the composition shown in Table 1, a mixture of metal particles 92 wt%, resin 4.5 wt%, and flux 3.5 wt% was slurried by adding toluene, and the mixture was stirred with a planetary mixer and then released. It was thinly coated on PET and dried at 120 ° C. to obtain an adhesive film having a thickness of 40 ⁇ m.
- ⁇ Support base material> Resin beads made of commercially available low density polyethylene (Novatec LL, manufactured by Nippon Polyethylene Co., Ltd.) were melted at 140 ° C. and formed into a long film having a thickness of 100 ⁇ m using an extruder.
- ⁇ Adhesive composition> Disperse a 200: 10: 5: 2 (weight ratio) mixture of n-octyl acrylate, 2-hydroxyethyl acrylate, methacrylic acid and benzoyl peroxide as a polymerization initiator in an appropriate amount of toluene, and adjust the reaction temperature and reaction time.
- a solution of an acrylic resin having a functional group was obtained.
- 2 parts by weight of coronate L (manufactured by Nippon Polyurethane) as a polyisocyanate and 100 parts by weight of the acrylic resin solution and an appropriate amount of toluene as an additional solvent are added and stirred to form an adhesive composition.
- Product 1 was obtained.
- ⁇ Dicing tape> The pressure-sensitive adhesive composition was applied on a supporting substrate so that the thickness of the pressure-sensitive adhesive composition 1 after drying was 5 ⁇ m, and dried at 120 ° C. for 3 minutes to prepare a dicing tape.
- DSC DSC measuring device (Hitachi High-Tech DSC7000) was used to confirm the presence or absence of an endothermic peak in the temperature range of 200 to 250 ° C. for each sample before sintering. Next, the same measurement was performed on each sample sintered at 250 ° C. for 4 hours under nitrogen.
- Adhesive strength The die bonding film is adjusted by bonding the adhesive film to the dicing tape, and the back surface is bonded to an Au-plated Si wafer at 100 ° C., then diced to 5 mm ⁇ to be separated into individual pieces. Chips and adhesive films were obtained.
- the shear adhesive strength at 260 ° C. was measured with a die shear measuring machine (Arctech series 4000). It was measured.
- Adhesive strength after TCT The same sample as above was subjected to (-40 ° C. + 150 ° C.) ⁇ 200 thermal shock (TCT) treatment, and then the shear adhesive strength at 260 ° C. was measured.
- the conductive adhesive films of Examples 1 to 4 containing metal particles and the sulfide compound represented by the general formula (1) as a flux do not use lead solder with high environmental load, and are heat resistant and moisture absorption reliable. It has been proved that there is a remarkable effect which is not present in the prior art and has both the reliability and the coupling reliability.
- Comparative Example 1 using tetraethylene glycol, which is not a sulfide compound as a flux, and Comparative Example 2 using abietic acid have low adhesive strength after TCT and are easy to absorb moisture. It was proved that there was difficulty in moisture absorption reliability and bonding reliability, such as showing internal peeling.
- abietic acid since abietic acid has a small equivalent for every mass of carboxylic acid, the oxide film cannot be removed with a relatively small amount of addition as in the examples. Therefore, the oxide film becomes a barrier, and the diffusion reaction between the metals does not proceed, so that an endothermic peak remains after sintering.
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Abstract
Description
また、特許文献4では、半導体装置に用いられる、無機フィラーとして銀を好ましく用いる接着剤組成物において、フラックスとしてチオールやチオエーテルを用いることが記載されているが、銀は高価かつイオンマイグレーションしやすいために、電極間に意図しない短絡を生じさせるリスクが大きい。
すなわち本発明は、少なくとも下記一般式(1)で示されるスルフィド化合物と、少なくともCu、Sn、Niのいずれかを含む金属粒子を必須成分として含む導電性組成物に関する。
(Rは少なくとも炭素を含む有機基であり、R’はRと同一もしくは異なる有機基である。なお、RとR’は結合していてもよい。)
一般式(1)
さらに、前記スルフィド化合物は、ビニル基、アクリロイル基、1級アミノ基、2級アミノ基、フェノール性水酸基、チオール基、ヒドロシリル基、ヒドロホウ素基、マレイン酸エステル基、マレイン酸アミド基、マレイン酸イミド基の少なくともいずれかを有する化合物であることが好ましい。
さらに、前記スルフィド化合物の数平均分子量は、200以上であることが好ましい。
ここで、前記熱硬化性樹脂が、イミド基を1分子に2単位以上含むマレイン酸イミド化合物を含むことが好ましい。
さらに、前記マレイン酸イミド化合物が、C10以上の脂肪族アミンに由来する骨格を含むことが好ましい。
さらに、前記マレイン酸イミド化合物の数平均分子量が、3000以上であることが好ましい。
さらに、前記熱硬化性樹脂が、エポキシ樹脂であることも好ましい。
さらに、前記金属粒子が、相互に金属間化合物形成が可能な組み合わせを含む2種以上の金属の混合物であることが好ましい。
さらに、前記2種以上の金属粒子の少なくとも2種が、Cu、Ag、Ni、Ti、Al、Sn、Zn、Au、Inから選択されるものであることが好ましい。
また、本発明は上記導電性接着剤組成物を基材への塗布乾燥や、押し出し、その他の方法にて膜状に成形された導電性接着フィルムに関する。
くわえて、本発明は、上記導電性接着フィルムと、粘着テープとを貼り合せてなる、ダイシングダイボンディングフィルムに関する。
(Rは少なくとも炭素を含む有機基であり、R’はRと同一もしくは異なる有機基である。なお、RとR’は結合していても、すなわち、いわゆる環状スルフィドであってもよい。)
一般式(1)
フラックスとして、一般式(1)で示されるスルフィド化合物を用いることは、従来フラックスとして一般的なカルボン酸或いはアルコールと比較して、極めて吸湿しにくい点で好ましい。
金属粒子としては、少なくとも1部が、Cu、Ag、Au、Ni、Snのいずれかを含むことが好ましい。
本願発明における導電性組成物には、さらに熱硬化性樹脂を含有することが好ましい。熱硬化性樹脂は焼結前のフィルム性および焼結後の熱サイクルによって発生する応力等に対する緩和性を付与する効果を有する。
図1は、本願発明にかかるダイシングダイボンディングフィルム10を示す断面図である。ダイシングダイボンディングフィルム10は、主にダイシングテープ12、接着フィルム13から構成されている。ダイシングダイボンディングフィルム10は、半導体加工用テープの一例であり、使用工程や装置にあわせて予め所定形状に切断(プリカット)されていてもよいし、半導体ウエハ1枚分ごとに切断されていてもよいし、長尺のロール状を呈していてもよい。
剥離処理PET11は、ダイシングテープ12を覆っており、粘着剤層12bや接着フィルム13を保護している。
半導体装置の製造にあたり、本発明のダイシングダイボンディングフィルム10を好適に使用することができる。
導体装置が得られる。
上記実施形態においては、本願発明の導電性組成物を、導電性接着剤組成物として接着フィルム13の形態として用いる例を示したが、導電性組成物に配合する熱硬化性樹脂の量を減らす、あるいは熱硬化性樹脂を配合せずに、はんだ等の用途としてペースト状の形態で用いることもできる。具体的には、スクリーン印刷やディスペンサ等によって塗布することにより、電子部品の接続に供することができる。
表1の組成にて、金属粒子92wt%、樹脂4.5wt%、フラックス3.5wt%の混合物に、トルエンを加えてスラリー化したものをプラネタリーミキサーにて撹拌の後、離形処理されたPET上に薄く塗って120℃で乾燥させ、厚さ40μmの接着フィルムを得た。また、表中、BMI-3000とは、下記構造(n=1~10)である。
表1の組成にて、金属粒子85wt%、樹脂8wt%、フラックス7wt%の組成とした他は、実施例と同じ方法で接着フィルムを作製した。
市販の低密度ポリエチレンよりなる樹脂ビーズ(日本ポリエチレン(株)製 ノバテックLL)を140℃で溶融し、押し出し機を用いて厚さ100μmの長尺フィルム状に成形した。
n-オクチルアクリレート、2-ヒドロキシエチルアクリレート、メタクリル酸、重合開始剤としてベンゾイルペルオキシドの200:10:5:2(重量比)混合物を適量のトルエン中に分散し、反応温度および反応時間を調整し、官能基を持つアクリル樹脂の溶液を得た。次にこのアクリル樹脂溶液に、ポリイソシアネートとしてコロネートL(日本ポリウレタン製)を前記アクリル樹脂溶液100重量部に対して2重量部と、追加の溶媒として適量のトルエンを加え、攪拌して粘着剤組成物1を得た。
支持基材上に粘着剤組成物1の乾燥後の厚さが5μmになるように前記粘着剤組成物を塗工し、120℃で3分間乾燥させてダイシングテープを作成した。
Cu:三井金属鉱業製 微粒銅粉
SnBi合金:三井金属鉱業製 微粒半田粉 Sn72Bi28
エポキシ:新日鉄住金化学製 YD-128+YD-013+YP-50+四国化成製 2PHZ の 15:5:10:1混合物
ビスマレイミド(C9):1,6’-ビスマレイミド-(2,2,4-トリメチル)ヘキサン + 日油製パーブチルO の 100:5混合物
ビスマレイミド(C10):1,10-ビスマレイミド-ノルマルデカン + 日油製パーブチルO の 100:5混合物
ビスマレイミド(C36):DMI社製 BMI-3000 + 日油製パーブチルO の 100:5混合物
スルフィド1:フェニルスルフィド Mw=186.3
スルフィド2:チアントレン Mw=216.3
スルフィド2:ビス(4-メタクリロイルチオフェニル)スルフィド Mw=386.6
である。
特に、フラックスとしてアクリロイル基を有するスルフィド化合物を用いた実施例3、さらには、上記アクリロイル基を有するスルフィド化合物にくわえ、熱硬化性樹脂として炭素数30以上の脂肪族アミンに由来する骨格を含むマレイン酸イミド樹脂を用いた実施例4は、極めて優れた性能を有することがわかる。
1a:裏面Auメッキ層
2:半導体チップ
4:金属リードフレーム
4a:Agメッキ層
5:モールド樹脂
6:Alワイヤ
10:ダイシング・ダイボンディングフィルム
11:剥離処理PET
12:ダイシングテープ
12a:支持基材
12b:粘着剤層
13:接着フィルム
20:リングフレーム
21:ダイシングブレード
22:吸着ステージ
30:テープ突き上げリング
31:突き上げピン
32:吸着コレット
Claims (16)
- 前記スルフィド化合物が1分子中に硫黄原子を2つ以上含む化合物である、請求項1記載の導電性組成物。
- 前記スルフィド化合物がビニル基、アクリロイル基、1級アミノ基、2級アミノ基、フェノール性水酸基、チオール基、ヒドロシリル基、ヒドロホウ素基、マレイン酸エステル基、マレイン酸アミド基、マレイン酸イミド基の少なくともいずれかを有する化合物である、請求項1または2記載の導電性組成物。
- 前記スルフィド化合物の数平均分子量が200以上である、請求項1~3のいずれかに記載の導電性組成物。
- 少なくとも前記一般式(1)で示されるスルフィド化合物、金属粒子、および熱硬化性樹脂を含む、請求項1~4のいずかに記載の導電性組成物。
- 前記熱硬化性樹脂がイミド基を1分子に2単位以上含むマレイン酸イミド化合物を含むことを特徴とする、請求項5記載の導電性組成物。
- 前記マレイン酸イミド化合物が、C10以上の脂肪族アミンに由来する骨格を含むことを特徴とする、請求項6記載の導電性組成物。
- 前記マレイン酸イミド化合物の数平均分子量が3000以上である、請求項6または7記載の導電性組成物。
- 前記熱硬化性樹脂がエポキシ樹脂である、請求項5記載の導電性組成物。
- 前記金属粒子の少なくとも1部が、Cu、Ag、Au、Ni、Snのいずれかを含むことを特徴とする、請求項1~9のいずれかに記載の導電性組成物。
- 前記金属粒子が、相互に金属間化合物形成が可能な組み合わせを含む2種以上の金属の混合物であることを特徴とする、請求項1~10のいずれかに記載の導電性組成物。
- 前記2種以上の金属粒子の少なくとも2種がCu、Ag、Ni、Ti、Al、Sn、Zn、Au、Inから選択されるものであることを特徴とする、請求項11記載の導電性組成物。
- 焼結前はDSC(示差走査熱量測定)により観測される吸熱ピークが100℃~250℃において少なくとも1つ存在し、かつ、焼結後はそれが観測されなくなることを特徴とする、請求項1~12のいずれかに記載の導電性組成物。
- 請求項1~13のいずれかに記載の導電性組成物を用いてなる、導電性接着剤組成物。
- 請求項14記載の導電性接着剤組成物を基材に膜状に成形した、導電性接着フィルム。
- 請求項15記載の導電性接着フィルムと、粘着テープとを貼り合わせてなる、ダイシングダイボンディングフィルム。
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Also Published As
Publication number | Publication date |
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CN107710336A (zh) | 2018-02-16 |
JPWO2017022523A1 (ja) | 2018-05-24 |
EP3333856A1 (en) | 2018-06-13 |
CN113249055A (zh) | 2021-08-13 |
US10689550B2 (en) | 2020-06-23 |
CN113249055B (zh) | 2024-02-13 |
JP6655605B2 (ja) | 2020-02-26 |
KR20170084287A (ko) | 2017-07-19 |
MY192916A (en) | 2022-09-15 |
KR102019761B1 (ko) | 2019-09-09 |
SG11201706655VA (en) | 2017-09-28 |
PH12018500249A1 (en) | 2018-08-13 |
US20170369746A1 (en) | 2017-12-28 |
EP3333856A4 (en) | 2018-12-26 |
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